US20170256683A1 - Light-emitting device - Google Patents

Light-emitting device Download PDF

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US20170256683A1
US20170256683A1 US15/599,068 US201715599068A US2017256683A1 US 20170256683 A1 US20170256683 A1 US 20170256683A1 US 201715599068 A US201715599068 A US 201715599068A US 2017256683 A1 US2017256683 A1 US 2017256683A1
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light
emitting device
optical element
conductive structure
emitting
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US15/599,068
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Chao-Hsing Chen
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Epistar Corp
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Epistar Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
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    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

  • the present disclosure relates to a light-emitting device, and more particularly, to a light-emitting device having multiple optical elements.
  • FIG. 1 illustrates a schematic view of a conventional light-emitting device.
  • a conventional light-emitting device 1 includes a submount 12 with a circuit 14 ; a solder 16 on the submount 12 , wherein an LED 11 is adhesively fixed on the submount 12 by the solder 16 ; and an electrical-connecting structure 18 electrically connecting the n-type electrode 15 with the circuit 14 .
  • the submount 12 can be a lead frame or a mounting substrate for circuit design and heat dissipation of the light-emitting apparatus 1 .
  • CLP Chip-Level Package
  • a method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier on the first optical element; and forming a conductive structure under the first optical element.
  • FIG. 1 illustrates a cross-sectional view of a conventional light-emitting device.
  • FIGS. 2A-2D illustrate a flow chart of the manufacturing process of a light-emitting device in accordance with an embodiment of the present application.
  • FIG. 3 illustrates a cross-sectional view of a light-emitting device in accordance with another embodiment of the present application.
  • FIG. 4 illustrates a cross-sectional view of a light-emitting device in accordance with another embodiment of the present application.
  • FIG. 5 illustrates a cross-sectional view of a light-emitting device in accordance with another embodiment of the present application.
  • FIG. 6 illustrates a schematic diagram of a light-generating device in accordance with an embodiment of the present application.
  • FIG. 7 illustrates a schematic diagram of a back light module in accordance with an embodiment of the present application.
  • FIGS. 2A-2D illustrate a flow chart of the manufacturing process of a light-emitting device 2 in accordance with an embodiment of the present disclosure.
  • a first optical element 22 is formed on a first carrier 20 and includes an opening 222 to expose the first carrier 20 .
  • a light-emitting element 24 is formed on the exposed portion of the first carrier 20 and a wavelength-converting layer 26 is formed on the light-emitting element 24 , as shown in FIG. 2B .
  • an electronic component (not shown) can be formed on the first carrier 20 as well.
  • a second optical element 28 is formed on the wavelength-converting layer 26 .
  • a bonding layer 21 is formed under a second carrier 23 , and/or on the first optical element 22 and the second optical element 28 .
  • the second carrier 23 is bonded to the second optical element 28 through a bonding process.
  • the first carrier 20 is removed.
  • a conductive structure 25 is formed under the first optical element 22 and the light-emitting element 24 to form the light-emitting device 2 , wherein the conductive structure 25 is electrically connected with the light-emitting element 24 .
  • the first carrier 20 and/or the second carrier 23 support the first optical element 22 , the second optical element 28 , and the light-emitting element 24 .
  • the material of the first carrier 20 and/or the second carrier 23 includes conductive material such as Diamond Like Carbon (DLC), Metal Matrix Composite (MMC), Ceramic Matrix Composite (CMC), Polymer Matrix Composite (PMC), Cu, Al, Si, Mo, Cu—Sn, Cu—Zn, Cu—Cd, Ni—Sn, Ni—Co, Au alloy, SiC, GaP, GaAsP, InP, LiGaO 2 , or LiAlO 2 , or insulating material such as diamond, glass, polymer, epoxy, quartz, acryl, Al 2 O 3 , ZnO, or AlN.
  • DLC Diamond Like Carbon
  • MMC Metal Matrix Composite
  • CMC Ceramic Matrix Composite
  • PMC Polymer Matrix Composite
  • the first optical element 22 and/or the second optical element 28 can guide and/or extract light emitted from the light-emitting element 24 to the environment for improving the light extraction efficiency of the light-emitting device 2 .
  • the material of the first optical element 22 and/or the second optical element 28 can be transparent material such as epoxy, polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), Sub, acrylic resin, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, glass, Al 2 O 3 , SINR, spin-on-glass (SOG), or the combination thereof.
  • PI polyimide
  • BCB benzocyclobutene
  • PFCB perfluorocyclobutane
  • Sub acrylic resin, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer
  • the first optical element 22 can be reflector including metal such as Cu, Al, Sn, Au, Ag, Ti, Ni, Ag—Ti, Ni—Sn, Au alloy, Ni—Ag, Ti—Al, or the combination thereof.
  • a reflective layer can be formed on the surfaces of the first topical element 22 to reflect the light from the light-emitting element 24 .
  • the material of the reflective layer can be the same as the aforementioned metal. The light from the light-emitting element 24 can be reflected by the first optical element 22 for improving the light extraction efficiency of the light-emitting device 2 .
  • the shape of the second optical element 28 includes but is not limited to triangle, semicircle, quarter circle, trapezoid, pentagon, or rectangle in the cross-sectional view.
  • An encapsulant can be formed between the second optical element 28 and the light-emitting element 24 in another embodiment to improve the light extraction efficiency of the light-emitting device 2 .
  • the light-emitting element 24 can be LED or Organic LED (OLED) and emit a first light with a first wavelength.
  • the wavelength-converting layer 26 can receive the first light and generate a second light with a second wavelength, wherein the second wavelength is different from the first wavelength.
  • the material of the wavelength-converting layer 26 can be phosphor such as yttrium aluminum garnet, silicate garnet, vanadate garnet, mixed oxides, alkaline earth metal silicates, alkaline earth metal sulfides, selenides, alkaline earth metal thlogallates, metal nitrides, metal oxo-nitrides and mixed molybdate-tungstate families, or mixed glass phosphors.
  • the material of the wavelength-converting layer 26 can be semiconductor including more than one element selected from a group consisting of Ga, Al, In, As, P, N, Zn, Cd, and Se as well.
  • the wavelength-converting layer 26 can be disposed on the light-emitting element 24 or be formed conformably around the contour thereof.
  • the bonding layer 21 can adhesively connect the first optical element 22 and/or the second optical element 28 with the second carrier 23 .
  • the material of the bonding layer 21 can be transparent material such as polyimide, BCB, PFCB, MgO, Sub, epoxy, acrylic resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, glass, Al 2 O 3 , SiO x , TiO 2 , SiN x , SOG, and so on.
  • the bonding layer 21 can be UV tape or foam as well.
  • the conductive structure 25 is for receiving external voltage.
  • the materials of the conductive structure 25 can be transparent conductive material and/or metal material.
  • the transparent conductive material includes but is not limited to ITO, InO, SnO, CTO, ATO, AZO, ZTO, ZnO, IZO, DLC, GZO, and so on.
  • the metal material includes but is not limited to Cu, Al, In, Sn, Au, Pt, Zn, Ag, Ti, Ni, Pb, Pd, Ge, Ni, Cr, Cd, Co, Mn, Sb, Bi, Ga, W, Be, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, Ag—Cu, Ge—Au, Au alloy, and so on.
  • the area of the bottom surface of the conductive structure 25 is larger than that of the light-emitting element 24 . It can be at least 2 times area of the bottom surface of the light-emitting element 24 .
  • the conductive structure 25 can effectively release the heat from the light-emitting element 24 for improving the efficiency thereof.
  • an insulating-diffusing layer (not shown) formed between the light-emitting element 24 and the conductive structure 25 in another embodiment.
  • the insulating-diffusing layer can reflect and diffuse the light from the light-emitting element 24 to improve the light extraction efficiency of the light-emitting device 2 .
  • the material of the insulating-diffusing layer includes but is not limited to epoxy, SiO x , Al 2 O 3 , TiO 2 , silicone, resin, or the combination thereof.
  • a reflective layer can be formed between the light-emitting element 24 and the conductive structure 25 to reflect the light from the light-emitting element 24 .
  • the material of the reflective layer can be the same as the aforementioned metal.
  • the light from the light-emitting element 24 can be reflected by the reflective layer for improving the light extraction efficiency of the light-emitting device 2 .
  • FIG. 3 shows another embodiment that a light-emitting device 3 is similar to the light-emitting device 2 .
  • the light-emitting device 3 includes a second optical element 30 which has a top surface at the same elevation as that of the first optical element 22 in a cross-sectional view. The top surface of the second optical element 30 is flat so it benefits the bonding process and reinforcing the structure of the light-emitting device 2 .
  • FIG. 4 shows another embodiment that a light-emitting device 4 is similar to the light-emitting device 2 .
  • the light-emitting device 4 includes a second optical element 40 which has a top surface lower than that of the first optical element 22 . Therefore, other optical elements can be formed easily on the second optical element 40 to tune the optical field for the application.
  • a light-emitting device 5 is similar to the light-emitting device 2 .
  • the light-emitting device 5 includes an electronic component 50 such as rectifier, protection component, capacity, resistance, and so on.
  • the electronic component 50 having various functions can control the current of the light-emitting element 24 based of the requirement of the application. It can be formed within the step of forming the light-emitting element 24 of the above manufacturing process. Preferably, the amount of the electronic component 50 and the light-emitting element 24 can be more than two, so the steps of the manufacturing process are reduced and the cost of the manufacturing is lowered.
  • the electronic component 50 and the light-emitting element 24 can be electrically connected by the conductive structure 25 .
  • the light-emitting device 5 further includes a wavelength-converting layer 52 on the second optical element 28 .
  • FIG. 6 illustrates a schematic diagram of a light-generating device 6 .
  • the light-generating device 6 includes the light-emitting device of anyone of the foregoing embodiments of the present application.
  • the light-generating device 6 can be an illumination device such as a street light, a lamp of vehicle, or an illustration source for interior.
  • the light-generating device 6 can be also a traffic sign or a backlight of a backlight module of an LCD.
  • the light-generating device 6 includes a light source 61 adopting any foregoing light-emitting devices; a power supplying system 62 providing current to the light source 61 ; and a control element 63 controlling the power supplying system 62 .
  • FIG. 7 illustrates a schematic diagram of a backlight module 7 .
  • a backlight module 7 includes the light-generating device 6 of the foregoing embodiment and an optical element 71 .
  • the optical element 71 can process the light generated by the light-generating device 6 for LCD application, such as scattering the light emitted from the light-generating device 6 .

Abstract

A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier on the first optical element; and forming a conductive structure under the first optical element.

Description

    REFERENCE TO RELATED APPLICATION
  • This application is a continuation application of U.S. patent application Ser. No. 14/714,564, filed May 18, 2015, now pending, which is a continuation application of U.S. patent application Ser. No. 13/527,139, filed Jun. 19, 2012, now U.S. Pat. No. 9,034,672, the entirety of which is hereby incorporated by reference.
    • BACKGROUND
  • Technical Field
  • The present disclosure relates to a light-emitting device, and more particularly, to a light-emitting device having multiple optical elements.
  • Description of the Related Art
  • An optoelectronic device, such as a light-emitting diode (LED) package, has been applied widely to optical display devices, traffic signals, data storing devices, communication devices, illumination devices, and medical apparatuses. The LED can be connected with other elements to form a light-emitting device. FIG. 1 illustrates a schematic view of a conventional light-emitting device. A conventional light-emitting device 1 includes a submount 12 with a circuit 14; a solder 16 on the submount 12, wherein an LED 11 is adhesively fixed on the submount 12 by the solder 16; and an electrical-connecting structure 18 electrically connecting the n-type electrode 15 with the circuit 14. The submount 12 can be a lead frame or a mounting substrate for circuit design and heat dissipation of the light-emitting apparatus 1. However, because of the trend of small and slim commercial electronic product, the development of the optoelectronic device also enters an era of miniature package. One promising packaging design for semiconductor and optoelectronic device is the Chip-Level Package (CLP).
    • SUMMARY OF THE DISCLOSURE
  • A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier on the first optical element; and forming a conductive structure under the first optical element.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings are included to provide easy understanding of the application, are incorporated herein and constitute a part of this specification. The drawings illustrate embodiments of the application and, together with the description, serve to illustrate the principles of the application.
  • FIG. 1 illustrates a cross-sectional view of a conventional light-emitting device.
  • FIGS. 2A-2D illustrate a flow chart of the manufacturing process of a light-emitting device in accordance with an embodiment of the present application.
  • FIG. 3 illustrates a cross-sectional view of a light-emitting device in accordance with another embodiment of the present application.
  • FIG. 4 illustrates a cross-sectional view of a light-emitting device in accordance with another embodiment of the present application.
  • FIG. 5 illustrates a cross-sectional view of a light-emitting device in accordance with another embodiment of the present application.
  • FIG. 6 illustrates a schematic diagram of a light-generating device in accordance with an embodiment of the present application.
  • FIG. 7 illustrates a schematic diagram of a back light module in accordance with an embodiment of the present application.
    •  DETAILED DESCRIPTION OF THE EMBODIMENTS
  • To better and concisely explain the disclosure, the same name or the same reference number given or appeared in different paragraphs or figures along the specification should has the same or equivalent meanings while it is once defined anywhere of the disclosure.
  • The following shows the description of the embodiments of the present disclosure in accordance with the drawings.
  • FIGS. 2A-2D illustrate a flow chart of the manufacturing process of a light-emitting device 2 in accordance with an embodiment of the present disclosure. Referring to FIG. 2A, a first optical element 22 is formed on a first carrier 20 and includes an opening 222 to expose the first carrier 20. A light-emitting element 24 is formed on the exposed portion of the first carrier 20 and a wavelength-converting layer 26 is formed on the light-emitting element 24, as shown in FIG. 2B. In another embodiment, an electronic component (not shown) can be formed on the first carrier 20 as well. Referring to FIG. 2C, a second optical element 28 is formed on the wavelength-converting layer 26. A bonding layer 21 is formed under a second carrier 23, and/or on the first optical element 22 and the second optical element 28. The second carrier 23 is bonded to the second optical element 28 through a bonding process. The first carrier 20 is removed. A conductive structure 25 is formed under the first optical element 22 and the light-emitting element 24 to form the light-emitting device 2, wherein the conductive structure 25 is electrically connected with the light-emitting element 24.
  • The first carrier 20 and/or the second carrier 23 support the first optical element 22, the second optical element 28, and the light-emitting element 24. The material of the first carrier 20 and/or the second carrier 23 includes conductive material such as Diamond Like Carbon (DLC), Metal Matrix Composite (MMC), Ceramic Matrix Composite (CMC), Polymer Matrix Composite (PMC), Cu, Al, Si, Mo, Cu—Sn, Cu—Zn, Cu—Cd, Ni—Sn, Ni—Co, Au alloy, SiC, GaP, GaAsP, InP, LiGaO2, or LiAlO2, or insulating material such as diamond, glass, polymer, epoxy, quartz, acryl, Al2O3, ZnO, or AlN.
  • The first optical element 22 and/or the second optical element 28 can guide and/or extract light emitted from the light-emitting element 24 to the environment for improving the light extraction efficiency of the light-emitting device 2. The material of the first optical element 22 and/or the second optical element 28 can be transparent material such as epoxy, polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), Sub, acrylic resin, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, glass, Al2O3, SINR, spin-on-glass (SOG), or the combination thereof. In another embodiment, the first optical element 22 can be reflector including metal such as Cu, Al, Sn, Au, Ag, Ti, Ni, Ag—Ti, Ni—Sn, Au alloy, Ni—Ag, Ti—Al, or the combination thereof. In another embodiment, a reflective layer can be formed on the surfaces of the first topical element 22 to reflect the light from the light-emitting element 24. The material of the reflective layer can be the same as the aforementioned metal. The light from the light-emitting element 24 can be reflected by the first optical element 22 for improving the light extraction efficiency of the light-emitting device 2. The shape of the second optical element 28 includes but is not limited to triangle, semicircle, quarter circle, trapezoid, pentagon, or rectangle in the cross-sectional view. An encapsulant can be formed between the second optical element 28 and the light-emitting element 24 in another embodiment to improve the light extraction efficiency of the light-emitting device 2.
  • The light-emitting element 24 can be LED or Organic LED (OLED) and emit a first light with a first wavelength. The wavelength-converting layer 26 can receive the first light and generate a second light with a second wavelength, wherein the second wavelength is different from the first wavelength. The material of the wavelength-converting layer 26 can be phosphor such as yttrium aluminum garnet, silicate garnet, vanadate garnet, mixed oxides, alkaline earth metal silicates, alkaline earth metal sulfides, selenides, alkaline earth metal thlogallates, metal nitrides, metal oxo-nitrides and mixed molybdate-tungstate families, or mixed glass phosphors. The material of the wavelength-converting layer 26 can be semiconductor including more than one element selected from a group consisting of Ga, Al, In, As, P, N, Zn, Cd, and Se as well. The wavelength-converting layer 26 can be disposed on the light-emitting element 24 or be formed conformably around the contour thereof.
  • The bonding layer 21 can adhesively connect the first optical element 22 and/or the second optical element 28 with the second carrier 23. The material of the bonding layer 21 can be transparent material such as polyimide, BCB, PFCB, MgO, Sub, epoxy, acrylic resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, glass, Al2O3, SiOx, TiO2, SiNx, SOG, and so on. The bonding layer 21 can be UV tape or foam as well.
  • The conductive structure 25 is for receiving external voltage. The materials of the conductive structure 25 can be transparent conductive material and/or metal material. The transparent conductive material includes but is not limited to ITO, InO, SnO, CTO, ATO, AZO, ZTO, ZnO, IZO, DLC, GZO, and so on. The metal material includes but is not limited to Cu, Al, In, Sn, Au, Pt, Zn, Ag, Ti, Ni, Pb, Pd, Ge, Ni, Cr, Cd, Co, Mn, Sb, Bi, Ga, W, Be, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, Ag—Cu, Ge—Au, Au alloy, and so on. The area of the bottom surface of the conductive structure 25 is larger than that of the light-emitting element 24. It can be at least 2 times area of the bottom surface of the light-emitting element 24. The conductive structure 25 can effectively release the heat from the light-emitting element 24 for improving the efficiency thereof. In addition, there is an insulating-diffusing layer (not shown) formed between the light-emitting element 24 and the conductive structure 25 in another embodiment. The insulating-diffusing layer can reflect and diffuse the light from the light-emitting element 24 to improve the light extraction efficiency of the light-emitting device 2. The material of the insulating-diffusing layer includes but is not limited to epoxy, SiOx, Al2O3, TiO2, silicone, resin, or the combination thereof. In another embodiment, a reflective layer can be formed between the light-emitting element 24 and the conductive structure 25 to reflect the light from the light-emitting element 24. The material of the reflective layer can be the same as the aforementioned metal. The light from the light-emitting element 24 can be reflected by the reflective layer for improving the light extraction efficiency of the light-emitting device 2.
  • FIG. 3 shows another embodiment that a light-emitting device 3 is similar to the light-emitting device 2. In addition, the light-emitting device 3 includes a second optical element 30 which has a top surface at the same elevation as that of the first optical element 22 in a cross-sectional view. The top surface of the second optical element 30 is flat so it benefits the bonding process and reinforcing the structure of the light-emitting device 2. FIG. 4 shows another embodiment that a light-emitting device 4 is similar to the light-emitting device 2. In addition, the light-emitting device 4 includes a second optical element 40 which has a top surface lower than that of the first optical element 22. Therefore, other optical elements can be formed easily on the second optical element 40 to tune the optical field for the application.
  • Referring to FIG. 5, a light-emitting device 5 is similar to the light-emitting device 2. In addition, the light-emitting device 5 includes an electronic component 50 such as rectifier, protection component, capacity, resistance, and so on. The electronic component 50 having various functions can control the current of the light-emitting element 24 based of the requirement of the application. It can be formed within the step of forming the light-emitting element 24 of the above manufacturing process. Preferably, the amount of the electronic component 50 and the light-emitting element 24 can be more than two, so the steps of the manufacturing process are reduced and the cost of the manufacturing is lowered. The electronic component 50 and the light-emitting element 24 can be electrically connected by the conductive structure 25. The light-emitting device 5 further includes a wavelength-converting layer 52 on the second optical element 28.
  • FIG. 6 illustrates a schematic diagram of a light-generating device 6. The light-generating device 6 includes the light-emitting device of anyone of the foregoing embodiments of the present application. The light-generating device 6 can be an illumination device such as a street light, a lamp of vehicle, or an illustration source for interior. The light-generating device 6 can be also a traffic sign or a backlight of a backlight module of an LCD. The light-generating device 6 includes a light source 61 adopting any foregoing light-emitting devices; a power supplying system 62 providing current to the light source 61; and a control element 63 controlling the power supplying system 62.
  • FIG. 7 illustrates a schematic diagram of a backlight module 7. A backlight module 7 includes the light-generating device 6 of the foregoing embodiment and an optical element 71. The optical element 71 can process the light generated by the light-generating device 6 for LCD application, such as scattering the light emitted from the light-generating device 6.
  • It will be apparent to those having ordinary skill in the art that various modifications and variations can be made to the devices in accordance with the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the present disclosure covers modifications and variations of this disclosure provided they fall within the scope of the following claims and their equivalents.

Claims (20)

What is claimed is:
1. A light-emitting device, comprising:
a light-emitting element having a top surface devoid of any bonding wire, and a bottom surface;
a first optical element having an inner sidewall surrounding the light-emitting element and reflective to light emitted from the light-emitting element, an outer sidewall opposite to the inner sidewall, a first topmost surface, and a first bottommost surface;
a second optical element formed on the light-emitting element and the first optical element, and having a second topmost surface which is higher than the first topmost surface, and a second bottommost surface which is substantially coplanar with the first bottommost surface;
a first conductive structure sequentially covering the bottom surface, the second bottommost surface, and the first bottommost surface, and having a third topmost surface, and a third bottommost surface which is structurally exposed to air for power input after the first conductive structure is connected to the first bottommost surface; and
a second conductive structure electrically connected to the light-emitting element, and separated from the first conductive structure;
wherein the first conductive structure covers more than half of the first bottommost surface without exceeding the outer sidewall in a cross-sectional view.
2. The light-emitting device of claim 1, further comprising a wavelength-converting layer covering the light-emitting element.
3. The light-emitting device of claim 2, wherein the wavelength-converting layer is conformal to the light-emitting element.
4. The light-emitting device of claim 1, wherein the first conductive structure has a thickness substantially equal to the distance between the third bottommost surface and the third topmost surface.
5. The light-emitting device of claim 1, further comprising an insulating-diffusing layer between the light-emitting element and the first conductive structure.
6. The light-emitting device of claim 1, wherein the inner sidewall is directly connected to and inclined against the first bottommost surface.
7. The light-emitting device of claim 1, wherein the first optical element has a height larger than that of the light-emitting element.
8. The light-emitting device of claim 1, wherein the second optical element comprises a transparent material.
9. The light-emitting device of claim 1, further comprising a carrier on the first optical element.
10. The light-emitting device of claim 1, wherein the inner sidewall is inclined against the first bottommost surface by an acute angle.
11. A light-emitting device, comprising:
a light-emitting element having a bottom surface;
a first optical element having an inner sidewall surrounding the light-emitting element and reflective to light emitted from the light-emitting element, a first topmost surface, an outer sidewall opposite to the inner sidewall, and a first bottommost surface;
a second optical element formed on the light-emitting element and the first optical element, and having a second topmost surface which is higher than the first topmost surface, and a second bottommost surface which is substantially coplanar with the first bottommost surface;
a first conductive structure sequentially covering the bottom surface, the second bottommost surface, and the first bottommost surface, and having a third topmost surface, and a third bottommost surface which is structurally exposed to air for power input after the first conductive structure is connected to the first bottommost surface;
wherein the first conductive structure covers more than half of the first bottommost surface without exceeding the outer sidewall in a cross-sectional view.
12. The light-emitting device of claim 11, further comprising a second conductive structure electrically connected to the light-emitting element without contacting with the first conductive structure.
13. The light-emitting device of claim 12, wherein the second conductive structure is formed within a boundary formed by the outer sidewall in the cross sectional view.
14. The light-emitting device of claim 11, further comprising a wavelength-converting layer covering the light-emitting element.
15. The light-emitting device of claim 14, wherein the wavelength-converting layer is conformal to the light-emitting element.
16. The light-emitting device of claim 11, wherein the first conductive structure has a thickness substantially equal to the distance between the third bottommost surface and the third topmost surface.
17. The light-emitting device of claim 11, wherein the inner sidewall is directly connected to and inclined against the first bottommost surface.
18. The light-emitting device of claim 11, wherein the first optical element has a height larger than that of the light-emitting element.
19. The light-emitting device of claim 11, further comprising a carrier on the first optical element.
20. The light-emitting device of claim 11, wherein the inner sidewall is inclined against the first bottommost surface by an acute angle.
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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
KR20160114682A (en) * 2014-01-29 2016-10-05 코닌클리케 필립스 엔.브이. Shallow reflector cup for phosphor-converted led filled with encapsulant
US9601670B2 (en) * 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
DE102014112818A1 (en) * 2014-09-05 2016-03-10 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component and optoelectronic component
CN105576107B (en) * 2014-10-09 2018-02-13 广东德豪润达电气股份有限公司 LED encapsulation structure and its method for packing
KR20160059706A (en) * 2014-11-19 2016-05-27 엘지이노텍 주식회사 Light emitting device package and lighting apparatus including the package
CN106935697B (en) * 2015-12-30 2020-08-14 晶元光电股份有限公司 Light emitting device and method for manufacturing the same
US10811578B1 (en) 2019-03-27 2020-10-20 Lextar Electronics Corporation LED carrier and LED package having the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060220046A1 (en) * 2005-03-04 2006-10-05 Chuan-Pei Yu Led

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6576488B2 (en) * 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
US6744077B2 (en) * 2002-09-27 2004-06-01 Lumileds Lighting U.S., Llc Selective filtering of wavelength-converted semiconductor light emitting devices
JP4082242B2 (en) * 2003-03-06 2008-04-30 ソニー株式会社 Element transfer method
TWI241042B (en) 2004-03-11 2005-10-01 Chen-Lun Hsingchen A low thermal resistance LED device
JP4754850B2 (en) * 2004-03-26 2011-08-24 パナソニック株式会社 Manufacturing method of LED mounting module and manufacturing method of LED module
US7560820B2 (en) * 2004-04-15 2009-07-14 Saes Getters S.P.A. Integrated getter for vacuum or inert gas packaged LEDs
KR20070102481A (en) * 2004-10-13 2007-10-18 마쯔시다덴기산교 가부시키가이샤 Luminescent light source, method for manufacturing the same, and light-emitting apparatus
JP2006186297A (en) * 2004-12-03 2006-07-13 Toshiba Corp Semiconductor light emitting device and its manufacturing method
KR100587017B1 (en) * 2005-02-23 2006-06-08 삼성전기주식회사 Light emitting diode package and method for manufacturing the same
US7847302B2 (en) * 2005-08-26 2010-12-07 Koninklijke Philips Electronics, N.V. Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature
WO2007080541A1 (en) * 2006-01-16 2007-07-19 Philips Intellectual Property & Standards Gmbh Light emitting device with a eu-comprising phosphor material
JP4828248B2 (en) 2006-02-16 2011-11-30 新光電気工業株式会社 Light emitting device and manufacturing method thereof
US20070284589A1 (en) * 2006-06-08 2007-12-13 Keat Chuan Ng Light emitting device having increased light output
JP4984824B2 (en) * 2006-10-26 2012-07-25 豊田合成株式会社 Light emitting device
US7791096B2 (en) * 2007-06-08 2010-09-07 Koninklijke Philips Electronics N.V. Mount for a semiconductor light emitting device
TWI364801B (en) * 2007-12-20 2012-05-21 Chipmos Technologies Inc Dice rearrangement package structure using layout process to form a compliant configuration
JP5440010B2 (en) * 2008-09-09 2014-03-12 日亜化学工業株式会社 Optical semiconductor device and manufacturing method thereof
TWI445156B (en) * 2009-01-20 2014-07-11 Epistar Corp Light-emitting device
CN101840973A (en) * 2009-03-20 2010-09-22 亿光电子工业股份有限公司 Light emitting diode encapsulating structure and manufacturing method thereof
US8080436B2 (en) * 2009-07-30 2011-12-20 Nichia Corporation Light emitting device and method of manufacturing the light emitting device
JP5139519B2 (en) * 2009-09-01 2013-02-06 株式会社東芝 Semiconductor light emitting device and semiconductor light emitting device
JP5202559B2 (en) * 2010-03-09 2013-06-05 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
FI20105739A (en) 2010-06-28 2011-12-29 Vuoluset Ky Speaker box consisting of stone and process for its manufacture
CN102347420A (en) * 2010-08-04 2012-02-08 展晶科技(深圳)有限公司 Light emitting diode (LED) manufacturing method
US8349628B2 (en) * 2011-03-22 2013-01-08 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060220046A1 (en) * 2005-03-04 2006-10-05 Chuan-Pei Yu Led

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US20130337591A1 (en) 2013-12-19
CN103515513A (en) 2014-01-15

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