CN106935697B - Light emitting device and method for manufacturing the same - Google Patents
Light emitting device and method for manufacturing the same Download PDFInfo
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- CN106935697B CN106935697B CN201511020355.8A CN201511020355A CN106935697B CN 106935697 B CN106935697 B CN 106935697B CN 201511020355 A CN201511020355 A CN 201511020355A CN 106935697 B CN106935697 B CN 106935697B
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
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- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a light emitting device and a method for manufacturing the same. The light emitting device comprises a light emitting element, a wavelength conversion layer and a light permeable element. The light-emitting element comprises a top surface, a bottom surface, a plurality of side surfaces and a first electric contact. The top surface and the bottom surface are connected with each other through a plurality of side surfaces, and the first electric contact is formed on the bottom surface. The wavelength conversion layer comprises a transparent adhesive and a plurality of wavelength conversion particles and at least covers the top surface of the light-emitting element. The light-permeable element comprises a light-emitting surface and is positioned on the wavelength conversion layer. The wavelength converting particles have a D50 of no greater than 10 microns, where D50 of the wavelength converting particles is defined as the corresponding particle size at which the cumulative particle distribution of the wavelength converting particles reaches 50%. In addition, the ratio of the thickness (T) of the wavelength converting layer to the D50 of the wavelength converting particles is between 6 and 20.
Description
Technical Field
The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly, to a light emitting device including a plurality of wavelength conversion particles having small particle diameters and a method of manufacturing the same.
Background
Among solid-state Light-Emitting elements, Light-Emitting Diode (LED) has characteristics such as low power consumption, low heat generation, long operation life, impact resistance, small size, and high response speed, and thus is widely used in various fields requiring Light-Emitting elements, such as vehicles, home appliances, and lighting fixtures.
There are several ways to convert the pure color light emitted by the LED into other colors of light. For example, the LED may be covered with a wavelength conversion layer, such as a phosphor layer. The phosphor is a photoluminescent substance, also called a wavelength conversion material, which can absorb a first light emitted by the LED and then emit a second light different from the first light. If the first light is not completely consumed, the remaining first light and the second light are mixed with each other to form mixed light of another color.
However, if the mixing ratio of the first light emitted from the LED and the converted second light is different at different viewing angles, the color or color temperature distribution of the mixed light is not uniform.
Disclosure of Invention
The invention discloses a light-emitting device, which comprises a light-emitting element, a wavelength conversion layer and a light-permeable element. The light emitting device includes a top surface, a bottom surface, a plurality of side surfaces and a first electrical contact, wherein the top surface and the bottom surface are connected to each other through the plurality of side surfaces. The first electrical contact is formed on the bottom surface. The wavelength conversion layer comprises a transparent adhesive and a plurality of wavelength conversion particles and at least covers the top surface of the light-emitting element. The light-permeable element comprises a light-emitting surface and is positioned on the wavelength conversion layer. The wavelength converting particles have a D50 of not more than 10 microns, wherein D50 is defined as the corresponding particle size at which the cumulative particle distribution of the wavelength converting particles reaches 50% and the ratio of the thickness (T) of the wavelength converting layer to the D50 of the wavelength converting particles is between 6 and 20.
The invention discloses a method for forming a light-emitting device. A plurality of light emitting devices are formed on a carrier. Then, a wavelength conversion sheet is formed on the plurality of light emitting elements. A transparent layer is formed on the wavelength conversion sheet. The transparent layer comprises a transparent bonding layer and a transparent substrate. And thermally bonding the light-permeable bonding layer and a light-permeable substrate. The light emitting element is separated from the temporary substrate.
Drawings
Fig. 1A is a cross-sectional view of a light emitting device according to an embodiment of the invention;
FIG. 1B is an enlarged view of a portion of the wavelength converting layer of FIG. 1A;
FIG. 1C is a diagram illustrating the relationship between the standard deviation of the viewing angle and the color coordinate in one embodiment;
fig. 2A to 2J are flow charts illustrating a manufacturing process of a light emitting device according to an embodiment of the invention;
fig. 3A to 3F are flow charts illustrating a manufacturing process of a light emitting device according to another embodiment of the present invention;
FIG. 4 is a cross-sectional view of a light emitting device according to another embodiment of the present invention;
fig. 5 is a cross-sectional view of a light emitting device according to still another embodiment of the present invention;
fig. 6 is a cross-sectional view of a light emitting device according to still another embodiment of the present invention.
Description of the symbols
100. 100a, 100b, 100a ', 100 b', 400, 500, 600: light emitting device
120. 120a, 120b, 420, 520, 620: light emitting element
121: the top surface
122: growth substrate
123: bottom surface
124: light emitting laminate
125: side surface
126a, 126a1, 126a2, 126b1, 126b 2: electrical contact
140. 140a, 140b, 440, 540, 640: wavelength conversion layer
140': wavelength conversion sheet
142: transparent adhesive
143: extension region
144: wavelength converting particles
150. 150a, 150a1, 150a2, 150b1, 150b 2: extension pad
150a ', 150 b': inclined plane
160. 460, 560, 660: light permeable element
162. 162a, 162 b: light permeable joining layer
162': light-permeable bonding adhesive
164. 164a, 164b, 164': light-permeable substrate
180. 180a, 180b, 180': light reflecting layer
220. 280, 290, 320, 350: temporary substrate
240. 270, 340: adhesive layer
260. 360: cutting tool
450a, 450b, 550a, 550b, 650a, 650 b: electrode pad
480. 580, 680: light reflection fence
570: light-permeable coating layer
682: side wall
684: bottom part
A1: amplifying block
d1, d 2: particle size of wavelength conversion particles
T1: a first thickness
T2: second thickness
Detailed Description
Fig. 1A is a cross-sectional view of a light emitting device 100 according to an embodiment of the disclosure. The light emitting device 100 includes a light emitting element 120, a wavelength conversion layer 140, and a light transmissive element 160. The wavelength conversion layer 140 covers a part of the surface of the light emitting element 120, and further, the light permeable element 160 is located above the wavelength conversion layer 140.
In one embodiment, the light emitting device 120 includes a growth substrate 122, a light emitting stack 124, and electrical contacts 126a and 126 b. One side of the light emitting stack 124 is connected to the growth substrate 122, and the other side is connected to the electrical contacts 126a and 126 b. In addition, the light emitting device 120 includes an upper surface 121, a lower surface 123 and a plurality of side surfaces 125, wherein the upper surface 121 and the bottom surface 123 are connected by the side surfaces 125. In one embodiment, the light emitting element 120 is a flip chip led die. In another embodiment, the growth substrate 122 may be a sapphire (sapphire) substrate as a substrate for epitaxial growth of the light emitting stack 124. In addition, an outer surface of the growth substrate 122 is also the upper surface 121 of the light emitting device 120, which is the light emitting surface of the light emitting device 120. The growth substrate 122 is not a limitation of the present invention, and in another embodiment, the growth substrate 122 may be removed or replaced with another substrate (a substrate of a different material, a different structure, or a different shape) in a post-fabrication process for manufacturing the light emitting device 100. In the present embodiment, the light emitting stack 124 includes a first semiconductor layer, an active layer and a second semiconductor layer (not shown). In one embodiment, the first semiconductor layer may be an n-type semiconductor layer and the second semiconductor layer may be a p-type semiconductor layer. In one embodiment, the two electrical contacts 126a and 126b are located on the same side of the light emitting device 120, and serve as an interface for electrically connecting the light emitting device 120 with the outside, and the outer surfaces of the two electrical contacts 126a and 126b are a portion of the bottom surface 123. The electrical contacts 126a and 126b are electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. In addition, the electrical contacts 126a and 126b may protrude from the bottom surface of the wavelength conversion layer 140 (as shown), or be approximately flush with the bottom surface (not shown), or only protrude from one of the bottom surfaces (not shown). In another embodiment, the light emitting device 120 is a vertical Light Emitting Diode (LED) die, and the electrical contacts 126a and 126b are formed on two opposite sides of the light emitting device and electrically connected to the first semiconductor layer and the second semiconductor layer, respectively.
In one embodiment, the light emitting device 120 has four sides 125, and the opposite sides are substantially parallel to each other, i.e., the light emitting device 120 is rectangular or parallelogram-shaped from a top view. The top surface 121 and the bottom surface 123 are also substantially parallel to each other. The light emitting element 120 may be a light emitting diode die (LED die/chip), such as, but not limited to, a blue light emitting diode die or an Ultraviolet (UV) light emitting diode die. In an embodiment, the light emitting element 120 is a blue led die, and is capable of providing an electric power to emit a first light, where a dominant wavelength (dominant wavelength) or a peak wavelength (peak wavelength) of the first light is between 410nm and 490 nm.
The wavelength conversion layer 140 may include a transparent adhesive 142 and a plurality of wavelength conversion particles 144 dispersed in the transparent adhesive 124, wherein the wavelength conversion particles 144 may absorb a first light emitted from the light emitting element 120 and convert the first light into a second light having a wavelength or a spectrum different from that of the first light. In one embodiment, the wavelength conversion particles 144 absorb the first light (e.g., blue light or UV light) and then emit the second light as yellow light having a dominant wavelength or peak wavelength between 530nm and 590 nm. In another embodiment, the wavelength conversion particles 144 absorb the first light (e.g., blue light or UV light) and then emit the second light as yellow-green light with a dominant or peak wavelength between 515nm and 575 nm. In other embodiments, the wavelength conversion particles 144 absorb the first light (e.g., blue light or UV light) and then emit the second light as red light, which has a dominant wavelength or peak wavelength between 590nm and 660 nm.
The wavelength conversion layer 140 may include a single kind or a plurality of kinds of wavelength conversion particles 144. In one embodiment, the wavelength conversion layer 140 includes wavelength conversion particles that emit yellow light. In another embodiment, the wavelength conversion layer 140 includes a plurality of wavelength conversion particles that can emit yellow-green and red light.
The transparent adhesive 142 may disperse the wavelength converting particles 144 in space and may fix the relative positions of the wavelength converting particles 144 to each other and conduct heat generated from the wavelength converting particles 144. Adjusting the weight ratio of the transparent binder 124 to the wavelength converting particles 144 may change the concentration of the wavelength converting particles 144 in the wavelength converting layer 140. The higher the concentration of the wavelength converting particles 144, the more light from the light emitting element 100 can be converted into another light (the higher the conversion ratio). In addition, in an embodiment, when the weight percentage of the wavelength conversion particles 144 in the wavelength conversion layer 140 is below 70%, the higher the weight percentage of the wavelength conversion particles 144 in the wavelength conversion layer 140 is, the more significant the effect of scattering light is. However, a too high concentration of the wavelength converting particles 144 indicates that the content of the transparent binder 142 is too small to effectively fix the wavelength converting particles 144. In one embodiment, the weight percentage of the wavelength conversion particles 144 in the wavelength conversion layer 140 is below 70%. In another embodiment, the weight percentage of the wavelength conversion particles 144 in the wavelength conversion layer 140 is between 30% and 60%. The wavelength conversion particles 144 can obtain a better conversion ratio and scattering effect in the above weight percentage range, and can be effectively fixed at a position in space. In addition, in order to ensure high light emitting efficiency of the first light for exciting the wavelength conversion particles 144 and the second light emitted from the wavelength conversion particles 144, the transparent adhesive 142 preferably has high transmittance, such as transmittance greater than 80%, 90%, 95%, or 99%, for the first light and the second light.
The material of the transparent adhesive 142 may be a thermosetting resin, and the thermosetting resin may be an epoxy resin or a silicone resin. In one embodiment, the transparent adhesive 142 is a silicone resin, and the composition of the silicone resin can be adjusted according to the requirements of the desired physical properties or optical properties. In one embodiment, the transparent adhesive 142 includes aliphatic silicone, such as methyl siloxane compound, and has a greater ductility and can withstand the thermal stress generated by the light emitting element 110. In another embodiment, the transparent adhesive 142 contains an aromatic silicone resin, such as a phenyl siloxane compound, and has a larger refractive index, which can improve the light extraction efficiency of the light emitting element 110. The smaller the difference between the refractive index of the transparent adhesive 142 and the refractive index of the material on the light emitting surface of the light emitting element 110 is, the larger the light emitting angle is, and the light extraction (light extraction) efficiency can be further improved. In one embodiment, the light emitting surface of the light emitting element 120 is made of sapphire (sapphire) with a refractive index of about 1.77, and the transparent adhesive 142 is made of aromatic silicone with a refractive index of greater than 1.50.
The size of the particle size of the wavelength converting particles 144 may be represented by D50, where D50 is defined as the corresponding particle size at which the cumulative particle distribution of the wavelength converting particles 144 reaches 50%. In one embodiment, the D50 of the wavelength converting particles 144 is not greater than 10 micrometers (μm). In another embodiment, D50 of wavelength converting particles 144 is between 1 micron and 8 microns. If the wavelength conversion particles 144 are larger than 10 μm, the scattering of the first light and the second light by the wavelength conversion particles 144 is not ideal, and thus the mixing of the first light and the second light is not good. Therefore, the color distribution of the mixed light is not uniform at different viewing angles. If the wavelength conversion particles 144 are smaller than 1 micron, the wavelength conversion efficiency of the wavelength conversion particles 144 is low, and more wavelength conversion particles 144 are needed, which may cause excessive scattering and energy loss of light traveling through the transparent adhesive 142. In one embodiment, when the weight percentage of the wavelength conversion particles 144 in the wavelength conversion layer 140 is below 70%, the wavelength conversion particles 144 have a better light scattering effect if the D50 of the wavelength conversion particles 144 is between 1 micron and 8 microns.
The material of the wavelength conversion particles 144 may include inorganic phosphor (phosphor), organic fluorescent pigment (organic fluorescent pigment), semiconductor material (semiconductor), or a combination thereof. The semiconductor material comprises a nano-sized crystalline (nano-crystalline) semiconductor material, such as a quantum-dot (quantum-dot) light emitting material. In one embodiment, the wavelength conversion particles 144 are phosphor selected from the group consisting of Y3Al5O12：Ce、Gd3Ga5O12：Ce、Lu3Al5O12：Ce、(Lu、Y)3Al5O12：Ce、Tb3Al5O12：Ce、SrS：Eu、SrGa2S4：Eu、(Sr、Ca、Ba)(Al、Ga)2S4：Eu、(Ca、Sr)S：(Eu、Mn)、(Ca、Sr)S：Ce、(Sr、Ba、Ca)2Si5N8：Eu、(Sr、Ba、Ca)(Al、Ga)SiN3：Eu、CaAlSiON：Eu、(Ba、Sr、Ca)2SiO4：Eu、(Ca、Sr、Ba)Si2O2N2：Eu、K2SiF6：Mn、K2TiF6: mn and K2SnF6: mn. The semiconductor material may comprise a II-VI semiconductor compound, a III-V semiconductor compound, a IV-VI semiconductor compound, or a combination thereof. The quantum dot light emitting material may be selected from the group consisting of zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), zinc oxide (ZnO), cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), gallium nitride (GaN), gallium phosphide (GaP), gallium selenide (GaSe), gallium antimonide (GaSb), gallium arsenide (GaAs), aluminum nitride (AlN), aluminum phosphide (AlP), aluminum arsenide (AlAs), indium phosphide (InP), indium arsenide (InAs), tellurium (Te), lead sulfide (PbS), indium antimonide (InSb), lead telluride (PbTe), lead selenide (PbSe), antimony telluride (SbTe), zinc selenium sulfide (ZnCdSeS), cadmium sulfide (CuInS), and copper indium sulfide (CuInS).
The thicknesses T, T1, T2 of the wavelength conversion layer 140 and the particle size of the wavelength conversion particles 144 may affect the light emitting properties of the light emitting device 100. In one embodiment, thickness T1 of the wavelength conversion layer is greater than thickness T2. In another embodiment, thickness T1 of the wavelength converting layer is substantially equal to thickness T2. In one embodiment, the ratio of the thickness (T) of the wavelength conversion layer to the D50 of the wavelength conversion particles is between 6 and 20, wherein the thickness (T) can be defined as the average of the thicknesses T1 and T2. In another embodiment, the ratio of the thickness (T) of the wavelength converting layer to the D50 of the wavelength converting particles is between 8 and 15. Under the same addition amount of the wavelength conversion particles 144, if the ratio of the thickness (T) of the wavelength conversion layer to the D50 of the wavelength conversion particles is less than 6, the density of the wavelength conversion particles 144 is too high, and the light of the first light and the second light in the wavelength conversion layer 140 is not easy to emit light because of being scattered by the wavelength conversion particles 144. On the contrary, if the ratio of the thickness (T) of the wavelength conversion layer to the D50 of the wavelength conversion particles is greater than 20, the first light and the second light may travel in the transparent adhesive 142 to be elongated to generate energy loss, thereby decreasing brightness. In one embodiment, the D50 of the wavelength converting particles 144 is between 2.5 microns and 4 microns, the thickness (T) of the wavelength converting layer is between 35 microns and 50 microns, and the weight percentage of the wavelength converting particles 144 in the wavelength converting layer 140 is between 35% and 60%, such that the ratio of the thickness (T) of the wavelength converting layer to the D50 of the wavelength converting particles is between 8.75 and 20.
In one embodiment, the thicknesses T1 and T2 of the wavelength conversion layer 140 are substantially the same, and the difference between the thicknesses T1 and T2 is no greater than 10% of the average of the thicknesses T1 and T2. In addition, in an embodiment, the maximum thickness and/or the difference between the minimum thickness and the average thickness of the wavelength conversion layer 140 is not greater than 10% relative to the average thickness, so that the paths of the first light and the second light passing through the wavelength conversion layer 140 can be more uniform.
The wavelength conversion layer 140 may cover one or more light emitting surfaces of the light emitting element 120. In one embodiment, the light emitting surface of the light emitting device 120 includes a top surface 121 and a side surface 125, and the wavelength conversion layer 140 covers both the top surface 121 and the side surface 125 of the light emitting device 120. In addition, in an embodiment, the wavelength conversion layer 140 is in direct contact with the top surface 121 and the plurality of side surfaces 125 of the light emitting element 120. In another embodiment, the wavelength conversion layer 140 covers or is in direct contact with only the top surface 121 of the light emitting element 120, but does not cover or contact the side surfaces 125. In an embodiment, the wavelength conversion layer 140 may form an extension region 143 from the side surface 125 of the light emitting element 120 to the outside of the light emitting element 120, in addition to covering the light emitting element 120. In other embodiments, the wavelength conversion layer 140 may cover only the light emitting elements 120.
Referring to fig. 1B, in an embodiment, a line L1 of the wavelength conversion layer 140 between the light emitting element 120 and the light transmissive element 160 may divide the wavelength conversion layer 140 into an upper block and a lower block. Wherein the average of the particle diameters d1 of the wavelength converting particles 144 in the upper block differs from the average of the particle diameters d2 of the wavelength converting particles 144 in the lower block by less than 10%. The shape of the wavelength converting particles 144 may be regular or irregular. Regular shapes include circular or elliptical. The irregular shape includes an asymmetrical shape, or a shape having a circular arc and/or a corner. The average value of the particle diameters of the wavelength converting particles 144 is an average value defining the maximum particle diameter and the minimum particle diameter of the wavelength converting particles 144.
Referring to fig. 1A, the light-transmissive element 160 is formed on the light-emitting element 120 and the wavelength conversion layer 140, and can protect the light-emitting element 120 and the wavelength conversion layer 140. In addition, the outer surface of the light-permeable element 160 can be used as the light-emitting surface of the light-emitting device 100. In the present embodiment, the light permeable element 160 provides structural support for the light emitting device 100 in addition to protecting the light emitting element 120. In the present embodiment, the light-permeable element 160 includes a light-permeable bonding layer 162 and a light-permeable substrate 164. The light-permeable bonding layer 162 bonds the wavelength conversion layer 140 and the light-permeable substrate 164. The material of the light-transmissive bonding layer 162 may be determined according to the material of the light-transmissive substrate 164, such as silicone resin or epoxy resin. In one embodiment, the transparent substrate 164 is glass and the light transmissive bonding layer 162 is silicone. The light-transmissive substrate 164 is somewhat rigid to provide sufficient support for the light-emitting device 100. The material of the transparent substrate 164 may be glass or fused quartz (fused quartz). In one embodiment, the refractive index of the wavelength conversion layer 140 is between 1.45 and 1.80. In one embodiment, the light permeable bonding layer 162 has a refractive index between 1.40 and 1.60. In one embodiment, the refractive index of the transparent substrate 164 is between 1.45 and 1.90. The refractive indices of the light permeable bonding layer 162 and the light transmissive substrate 164 may be the same or different. In one embodiment, the refractive index of the light transmissive bonding layer 162 is greater than that of the light transmissive substrate 164 and is between the wavelength conversion layer 140 and the light transmissive substrate 164.
Referring to fig. 1A, the bottom surface of the extension region 143 and a portion of the bottom surface 123 of the wavelength conversion layer 140 may be covered by the light reflection layer 180. The light reflection layer 180 can reflect the first light and the second light toward the light emitting surface. In one embodiment, the extension region 143 of the wavelength conversion layer 140 is in direct contact with the light reflection layer 180, and the bonding strength of the wavelength conversion layer 140 in the light emitting device 100 can be improved by the bonding of the light reflection layer 180 and the extension region 143 of the wavelength conversion layer 140, so as to reduce the peeling (peeling) probability of the wavelength conversion layer 140. The light reflecting layer 180 may be composed of a light reflecting non-conductive material. In one embodiment, the light reflective material is, for example, titanium oxide (TiO)2) Zirconium oxide (ZrO)2) Niobium oxide (Nb)2O5) Alumina (Al)2O3) Silicon oxide (SiO)2) Magnesium fluoride (MgF)2) Aluminum nitride (Al)2N3) In another example, the light reflective material is formed of a light reflective sizing of particles of the above materials mixed with an adhesive, such as a silicone, acrylic, or epoxy.
Referring to fig. 1A, the lower surfaces of the electrical contacts 126a and 126b may cover the extension pads 150a and 150b (collectively referred to as 150). In one embodiment, the extension pads 150a, 150b cover the electrical contacts 126a and 126b and a portion of the light reflecting layer 180. As shown, the extending pads 150a, 150b extend inward to be close to each other, and extend outward to stop before touching the outer boundary of the light reflecting layer 180. However, the extending pads 150a, 150b may also stop on the outer boundary of the light reflective layer 180 (not shown). In one embodiment, the surface area of the extension pad 150a is greater than the surface area of the contact electrode 126a and/or the surface area of the extension pad 150b is greater than the surface area of the contact electrode 126 b. In one embodiment, the thickness of the reflector 180 is greater than the thickness of the contact electrodes 126a and 126b, and when the extension pads 150a and 150b extend from the contact electrodes 126a and 126b to the reflector 180, an inclined plane 150a 'and 150 b' is formed due to the height difference between the reflector 180 and the contact electrodes 126. In another embodiment, if the contact electrodes 126a and 126b and the light reflecting layer 180 are coplanar (not shown), the above-mentioned slopes do not exist. The extension pads 150a, 150b are a highly conductive material such as, but not limited to, copper (Cu), silver (Ag), gold (Au) metal. In one embodiment, the extension pads 150a, 150b may be formed by electroplating.
FIG. 1C is a diagram showing the relationship between the viewing angle and the standard deviation of color coordinates in the embodiment of FIG. 1A. The X-axis represents the viewing angle, 0 ° corresponding to the direction perpendicular to the top surface 121, and 90 ° and-90 ° being two opposite directions parallel to the top surface 121, respectively. The Δ u 'v' on the Y-axis represents the distance from any point on the color coordinates to a reference point (u0 ', v 0'). In other words, a larger Δ u 'v' indicates a longer distance between two points on the color coordinates, which indicates a larger difference between the mixing ratio of the first light and the second light. Where Δ u 'v ═ Δ u' 2 +. Δ v '2) 1/2, u' and v 'respectively represent color coordinates under the CIE 1976 color system, Δ u' is u '-u 0', 'Δ v' is v '-v 0', and reference values (u0 ', v 0') are defined as the average of the color coordinates at all angles.
Within the angular distribution interval, a smaller variation of Δ u 'v' indicates a better uniformity of color distribution at different viewing angles. In one embodiment, the uniformity of the color distribution of the light emitting device is less than 0.0040 difference in Δ u 'v' values at viewing angles from 0 ° to 70 °. In fig. 1C, the Δ u 'v' values of 0 ° to 70 ° (or 0 ° to-70 °) differ by less than 0.0030. The difference in the Δ u 'v' values of fig. 1C in the range of 0 ° to 30 ° (or 0 ° to-30 °) is less than 0.0015. The difference in Δ u 'v' values in the range of 30 ° to 70 (or-30 ° to-70 °) is less than 0.0020.
Fig. 2A to 2J are flowcharts illustrating the fabrication of the light emitting device 100. Referring to fig. 2A, a temporary substrate 220, light emitting elements 120a and 120b, and an adhesive layer 240 are provided for fixing the light emitting elements 120a and 120b on the temporary substrate 220, wherein the number of the light emitting elements is only an example and is not limited to two. In one embodiment, the temporary substrate 220 is glass, sapphire substrate, metal sheet or plastic sheet, and the adhesive layer 240 is an ultraviolet curing adhesive (UV curing adhesive).
Referring to fig. 2B, a wavelength conversion sheet 140' is formed on the adhesive layer 240 and covers the light emitting elements 120a and 120B. The wavelength conversion sheet 140' is a sheet-like structure formed in advance by mixing a plurality of wavelength conversion particles with a transparent binder. The size of the sheet structure can be adjusted according to the requirement, for example, the sheet structure includes a plurality of separated wavelength conversion sheets, which can cover a plurality of light emitting elements in batch or in sequence, that is, one wavelength conversion sheet 140' only covers one or a small number of light emitting elements (for example, below 1/50, 1/100, or 1/200 of the total number of light emitting elements on the temporary substrate 220). For another example, the sheet structure is a tape (tape) which can continuously and at one time cover several light emitting devices, that is, one wavelength conversion sheet covers a plurality of or all light emitting devices on the temporary substrate 220 (for example, more than 1/50, 1/100, 1/200 of the total number of light emitting devices on the temporary substrate 220). In one embodiment, the wavelength conversion sheet 140' is attached to the light emitting elements 120a and 120 b. The wavelength conversion sheet 140 'is heated and pressed while being bonded by the adhesion of the upper mold (the wavelength conversion sheet may be placed on the upper mold, not shown) and the lower mold (the light emitting element may be placed on the lower mold, not shown) to soften the wavelength conversion sheet 140' so that it can be tightly bonded to the light emitting elements 120a, 120 b. In addition, when the upper mold and the lower mold are very close to each other but the wavelength conversion sheet 140 ' is not yet in contact with the light emitting elements 120a and 120b, air is drawn, so that air bubbles between the wavelength conversion sheet 140 ' and the light emitting elements 120a and 120b can be reduced, and the bonding force between the wavelength conversion sheet 140 ' and the light emitting elements 120a and 120b can be improved. In one embodiment, the wavelength conversion sheet 140 'further includes a carrier (not shown) for carrying the wavelength conversion sheet 140' when formed on the light emitting elements 120a and 120 b. In one embodiment, the carrier is less flexible, so that the wavelength conversion sheet 140' can be tightly attached to the light emitting devices 120a and 120b by removing the carrier and then exhausting. In another embodiment, the carrier is flexible, so that the wavelength conversion sheet 140' including the carrier can be attached to the light emitting devices 120a and 120b by air-pumping without removing the carrier first. The material of the carrier plate may be a polymer, such as polyethylene or polyester.
Referring to fig. 2C, a light-permeable adhesive 162 'is formed on the wavelength conversion sheet 140'. In one embodiment, the light-permeable bonding glue 162 'is applied by molding, heating and applying pressure to cover the upper surface of the wavelength conversion sheet 140' and fill the recesses between the light emitting elements 120a and 120 b. In other embodiments, the light-permeable adhesive 162' is formed by coating or attaching a film. In one embodiment, the light-permeable bonding glue 162' at this stage is still in a semi-cured state, or referred to as a B-stage glue.
Referring to fig. 2D, a transparent substrate 164 ' is formed on the light-permeable bonding adhesive 162 ' to bond with the light-permeable bonding adhesive 162 '. In one embodiment, the transparent substrate 164 'and the light-transmissive bonding adhesive 162' may be bonded by heating. In one embodiment, the heating temperature is greater than 140 ℃. In another embodiment, the heated light-transmissive bonding glue 162 ' is bonded to the wavelength conversion sheet 140 ' and the light-transmissive substrate 164 ' and is converted to a fully cured state, or a C-stage (C-stage) glue. Since the bonding temperature for bonding the transparent substrate 164 'and the light-permeable bonding adhesive 162' needs to be greater than 140 ℃, it is avoided that the adhesive layer 240 must be able to withstand a temperature above 140 ℃ to avoid thermal dissociation from losing the function of fixing the light-emitting elements 120a and 120b on the temporary substrate 220. According to an embodiment, the adhesive layer 240 is a heat-resistant ultraviolet curing adhesive (UV curing adhesive).
Referring to fig. 2E, the light emitting elements 120a and 120b and the wavelength conversion sheet 140 ', the light-permeable bonding adhesive 162 ', and the light-transmissive substrate 164 ' stacked thereon are separated by a separate manufacturing process. The wavelength conversion sheet 140 ' is separated to form wavelength conversion layers 140a and 140b, the light-permeable bonding glue 162 ' is separated to form light- permeable bonding layers 162a and 162b, and the light-permeable substrate 164 ' is separated to form light- permeable substrates 164a and 164 b. The separating process includes cutting the transparent substrate 164 ', the transparent bonding glue 162 ' and the wavelength conversion sheet 140 ' from top to bottom with the cutting tool 260. The cutting step may be performed at a time or in multiple steps. According to one embodiment, the multiple cutting is performed by cutting the transparent substrate 164 ' with a cutter and then cutting the transparent bonding paste 162 ' and the wavelength conversion sheet 140 ' with a cutter.
Referring to fig. 2F, an energy (e.g., radiant energy or thermal energy) is provided such that the viscosity of the adhesive layer 240 is reduced or eliminated. According to one embodiment, the adhesive layer 240 is an ultraviolet curing adhesive, and the temporary substrate 220 is a transparent material such as a glass or sapphire substrate. At this time, the ultraviolet ray is irradiated from the direction of the temporary substrate to lower the viscosity of the ultraviolet curing adhesive 240' after curing. Referring to fig. 2G, the light emitting devices 100a ' and 100b ' are taken from the cured uv curable adhesive 240 '.
According to the embodiment of fig. 1A, the light-reflecting layer 180 and the extension pad 150 are formed on the bottom surfaces of the light-emitting devices 120a and 120 b. Referring to fig. 2G, the light emitting devices 100a 'and 100 b' are inverted and then attached to another temporary substrate 280 by an adhesive 270. The transparent substrates 164a and 164b are bonded to the adhesive 270 for fixing. The light reflecting layers 180a and 180b are formed around the electrical contacts 126a1, 126a2, 126b1, 120b2 of the light emitting devices 120a and 120b, respectively. The light reflecting layers 180a and 180b may protrude or be flush with the electrical contacts 126a1, 126a2 and 126b1, 120b 2. The light reflecting layers 180a and 180b may be formed by screen printing or development by exposure.
Referring to fig. 2I, extension pads 150a1, 150a2 and 150b1, 150b2 are formed over electrical contacts 126a1, 126a2 and 126b1, 120b2, respectively. According to one embodiment, the extension pads 150a1, 150a2, 150b1, 150b2 are formed by electroplating. If the light reflecting layer 180 and/or the extension pad 150 are not required to be formed, the steps shown in FIG. 2G and/or FIG. 2I can be omitted.
Referring to fig. 2J, according to one embodiment, the light emitting devices 100a and 100b are inverted and then attached to another temporary substrate 290. The temporary substrate 290 is, for example, a blue film. According to other embodiments, the light emitting devices 100a and 100b can be sequentially placed in a tape and place (pick and place).
Fig. 3A to 3F are another flow chart showing the fabrication of the light emitting device 100. The steps before fig. 3A may be the same as or similar to fig. 2A to 2C, and fig. 3A is the same as or similar to fig. 2D.
Referring to fig. 3B, another temporary carrier 350 is provided to contact the other side of the transparent substrate 164 ', and the temporary carrier 350 has an adhesive layer (not shown) for fixing the transparent substrate 164' to the temporary carrier 350. Referring to fig. 3C, the adhesive layer 340' is formed after the adhesive layer 340 is reduced or disappears by applying energy. The structure, function and method of forming the adhesive layer 340 can be found in the above description.
Referring to fig. 3D, the adhesive layer 340' is separated from the light emitting elements 120a and 120 b. At this time, the light emitting elements 120a and 120b respectively expose the electrical contacts 126a1, 120a2, 126b1 and 120b 2. Referring to fig. 3E, a light reflecting layer 180' and extension pads 150a1, 150a2 and 150b1, 150b2 are sequentially formed. The structure, function and formation of the light reflecting layer 180' and the extending pads 150a1, 150a2 and 150b1, 150b2 can be found in the above description.
Referring to fig. 3F, the light reflecting layer 180 ', the wavelength conversion sheet 140', the light-transmissive bonding glue 162 ', and the light-transmissive substrate 164' are separated by a separation process. The light reflecting layer 180 'is separated to form wavelength converting layers 180a and 180b, the wavelength converting sheet 140' is separated to form wavelength converting layers 140a and 140b, the light permeable bonding layer 162a and 162b is formed after the light permeable bonding glue 162 ', and the light permeable substrate 164' is separated to form light permeable substrates 164a and 164 b. According to an embodiment, the separation process is performed by cutting the light reflective layer 180 ', the wavelength conversion sheet 140', and the transparent bonding adhesive 162 'with a cutting tool 360 for multiple times, for example, a first cutting tool is used to cut the light reflective layer, and then a second cutting tool is used to cut the transparent substrate 164'. According to another embodiment, a cutting tool may be used to cut the light reflective layer 180 ', the wavelength conversion sheet 140', the light transmissive bonding glue 162 'and the light transmissive substrate 164' at one time.
Fig. 4 is a cross-sectional view of a light emitting device 400 according to another embodiment of the present invention. The light emitting device 400 includes a light emitting element 420, a wavelength conversion layer 440, a light transmissive element 460 and a light reflective fence 480. The wavelength conversion layer 440 covers a portion of the surface of the light emitting element 420, and further, the light permeable element 460 is located above the wavelength conversion layer 440. Light reflecting rails 480 surround the sides of light emitting elements 420.
The specific structure, function and formation method of the light emitting device 420, the wavelength conversion layer 440 and the light transmissive device 460 can be found in the paragraphs related to fig. 1A to fig. 1C. The light reflecting fence 480 can be the same or similar material as the light reflecting layer 180. The light reflecting rail 480 may be formed by molding or laminating a light reflecting sheet. According to an embodiment, the wavelength conversion layer 440 covers the top surface of the light emitting elements 420 and extends to the top surface of the light reflecting fence 480. According to an embodiment, the wavelength conversion layer 440 is a flat structure without a bending portion, so that the wavelength conversion layer 440 does not encounter stress at the bending portion, and the risk of breaking due to the stress can be reduced. According to an embodiment, the light emitting device 400 further has electrode pads 450a and 450b electrically connected to the light emitting element 420 and surrounded by the light reflecting rail 480. The electrode pads 450a, 450b may be made of a metal or alloy with good conductivity, such as: copper.
Fig. 5 is a cross-sectional view of a light emitting device 500 according to another embodiment of the disclosure. The light emitting device 500 includes a light emitting element 520, a wavelength conversion layer 540, a light permeable element 560, a light permeable cladding 570 and a light reflecting fence 580. The same portions as those in the embodiments of fig. 1A to 1C or/and 4 can be referred to the above description, except that a light-permeable covering layer 570 surrounds the side of the light-emitting element 520. In one embodiment, the light-permeable coating 570 covers the side of the light-emitting element 520 and contacts a surface of the wavelength conversion layer 540. In addition, one surface of the light-transmissive layer is in contact with the light-reflecting fence 580. In one embodiment, the thickness of the light-permeable covering layer 570 is gradually decreased from the wavelength conversion layer 540 to the electrode pads 550a and 550b, and the light-reflecting rail 580 has an inclined inner surface and forms a space with a large top and a small bottom for accommodating the light-emitting element 520. Thus, the light emitting elements 520 can be reflected by the light reflecting rails 580 toward the wavelength converting layer 540 when they exit from the side. In other embodiments, the light permeable cladding 570 covering the sides of the light emitting elements 520 and the light reflecting rails 580 can be substantially constant in thickness.
Fig. 6 is a cross-sectional view of a light emitting device 600 according to another embodiment of the present invention. The light emitting device 600 includes a light emitting element 620, a wavelength conversion layer 640, a light transmissive element 660, and a light reflective fence 680. The same parts as in the embodiments of fig. 1A to 1C or/and 4 or/and 5 can be referred to the above description. In one embodiment, as shown in FIG. 6, the light reflecting fences 680 are spaced apart from the sides of the light emitting device 620. In one embodiment, the light reflecting rail 680 forms a recess around the light emitting device 620, and thus has a sidewall 682 and a bottom 684. In addition, a wavelength conversion layer 640 and a light transmissive element 660 are further included between the sidewall 682 of the light reflective fence 680 and the side surface of the light emitting element 620. In one embodiment, the wavelength conversion layer 640 covers the top and side surfaces of the light emitting element 620 and extends above the bottom 684 of the light reflecting rail 680. In another embodiment, the light transmissive element 660 covers the wavelength conversion layer 640 and fills the gap between the wavelength conversion layer 640 and the sidewall 682 of the light reflective fence 680. Since the light-permeable element 660 is disposed between the wavelength conversion layer 640 and the light-reflecting fence 680, a part of light in the lateral direction of the light-emitting element 620 can directly emit light, thereby improving the light extraction effect. The light reflecting fence 680 may be substantially parallel to the side of the light emitting element 620 or have a slope from the wavelength conversion layer 640 to the electrode pads 650a and 650 b.
The above-mentioned embodiments are merely illustrative of the technical spirit and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and to implement the same, so that the scope of the present invention should not be limited thereto, i.e., all equivalent changes and modifications made in the spirit of the present invention should be covered by the scope of the present invention.
Claims (10)
1. A light emitting device, comprising:
a light emitting element including a top surface from which light can be emitted, a bottom surface, and a side surface connecting the top surface and the bottom surface;
a wavelength conversion layer including a transparent binder and a plurality of wavelength conversion particles and covering the top surface of the light emitting element to form a first thickness; and
a light-permeable element including a light-emitting surface and located on the wavelength conversion layer,
wherein the wavelength converting particles have a D50 of not more than 10 μm, and D50 is defined as a particle size corresponding to a cumulative particle distribution of the wavelength converting particles of 50%, and
wherein the ratio of the thickness of the wavelength conversion layer to the D50 of the wavelength conversion particles is between 6 and 20,
wherein, the uniformity of the color distribution of the light-emitting device is less than 0.0040 difference in the value of Deltau 'v' at viewing angles of 0-70 deg.
2. The light-emitting device according to claim 1, wherein the wavelength conversion layer covers the side surface of the light-emitting element and is formed to have a second thickness, and a difference between the second thickness and the first thickness is not more than 10% of an average value of the second thickness and the first thickness.
3. A light emitting device, comprising:
a light emitting element including a top surface from which light can be emitted;
a wavelength conversion layer including a transparent binder and a plurality of wavelength conversion particles and covering the top surface of the light emitting element; and
a light-permeable element including a light-emitting surface and located on the wavelength conversion layer,
wherein the wavelength converting particles have a D50 of not more than 10 μm, and D50 is defined as the particle size corresponding to a cumulative particle distribution of the wavelength converting particles of 50%, and
the uniformity of the color distribution of the light emitting device is less than 0.0040 difference in the value of Deltau 'v' at viewing angles of 0 DEG to 70 deg.
4. The light-emitting device according to claim 1 or 3, further comprising a light-reflecting layer covering a lower surface of the extension region of the wavelength-converting layer and the bottom surface of a portion of the light-emitting element.
5. The light-emitting device according to claim 1 or 3, wherein the weight percentage of the wavelength conversion particles in the wavelength conversion layer is below 70%.
6. The light-emitting device according to claim 1 or 3, wherein the D50 of the wavelength converting particles is between 1 micron and 8 microns.
7. The light-emitting device according to claim 1 or 3, wherein the wavelength conversion layer is divided into an upper block and a lower block from the light-emitting element to the light-transmissive element, and an average value of the particle diameters of the wavelength conversion particles in the upper block and an average value of the particle diameters of the wavelength conversion particles in the lower block are different by no more than 10%.
8. The light-emitting device of claim 1 or 3, further comprising an electrical contact and an extension pad, wherein the extension pad is formed on the electrical contact and has an area larger than that of the electrical contact.
9. The light-emitting device of claim 1 or 3, further comprising a light-reflecting fence surrounding the side of the light-emitting element.
10. A method of forming a light emitting device, comprising:
forming a light emitting element on the temporary substrate, wherein the light emitting element comprises a top surface capable of emitting light;
forming a wavelength conversion layer on the top surface of the light emitting element;
forming a light-permeable element on the wavelength conversion layer;
heating to bond the light-permeable element to form the light-emitting device; and
separating the light emitting device from the temporary substrate, wherein the heating temperature is higher than 140 ℃,
wherein, the uniformity of the color distribution of the light-emitting device is less than 0.0040 difference in the value of Deltau 'v' at viewing angles of 0-70 deg.
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| CN201511020355.8A CN106935697B (en) | 2015-12-30 | 2015-12-30 | Light emitting device and method for manufacturing the same |
| CN202010708374.4A CN111883635B (en) | 2015-12-30 | 2015-12-30 | Light emitting device and method of manufacturing the same |
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| ATE525755T1 (en) * | 2001-10-12 | 2011-10-15 | Nichia Corp | LIGHT-EMITTING COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
| JP2007103513A (en) * | 2005-09-30 | 2007-04-19 | Kyocera Corp | Light emitting device |
| JP5368809B2 (en) * | 2009-01-19 | 2013-12-18 | ローム株式会社 | LED module manufacturing method and LED module |
| KR20170091167A (en) * | 2010-02-09 | 2017-08-08 | 니치아 카가쿠 고교 가부시키가이샤 | Light emitting device |
| CN104851957B (en) * | 2010-10-27 | 2019-06-11 | 晶元光电股份有限公司 | Light-emitting diode encapsulation structure |
| US8581287B2 (en) * | 2011-01-24 | 2013-11-12 | Stanley Electric Co., Ltd. | Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing |
| JP2013062320A (en) * | 2011-09-12 | 2013-04-04 | Olympus Corp | Light emitting device |
| CN103383986A (en) * | 2012-05-04 | 2013-11-06 | 旭明光电股份有限公司 | Light-emitting diode dice with wavelength conversion layer and manufacturing method thereof |
| US9034672B2 (en) * | 2012-06-19 | 2015-05-19 | Epistar Corporation | Method for manufacturing light-emitting devices |
| US9391243B2 (en) * | 2012-07-05 | 2016-07-12 | Koninklijke Philips N.V. | Phosphor separated from LED by transparent spacer |
| TWI481083B (en) * | 2012-10-16 | 2015-04-11 | Lextar Electronics Corp | Light-emitting device |
| US9490398B2 (en) * | 2012-12-10 | 2016-11-08 | Citizen Holdings Co., Ltd. | Manufacturing method of light emitting device in a flip-chip configuration with reduced package size |
| CN103762317B (en) * | 2013-12-30 | 2016-08-17 | 昆山工研院新型平板显示技术中心有限公司 | A kind of organic electroluminescence device |
| CN104241506A (en) * | 2014-08-15 | 2014-12-24 | 常州市武进区半导体照明应用技术研究院 | Light-emitting diode device, light source assembly and light source module |
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| CN106935697A (en) | 2017-07-07 |
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