CN103383986A - Light-emitting diode dice with wavelength conversion layer and manufacturing method thereof - Google Patents
Light-emitting diode dice with wavelength conversion layer and manufacturing method thereof Download PDFInfo
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- CN103383986A CN103383986A CN2013101466080A CN201310146608A CN103383986A CN 103383986 A CN103383986 A CN 103383986A CN 2013101466080 A CN2013101466080 A CN 2013101466080A CN 201310146608 A CN201310146608 A CN 201310146608A CN 103383986 A CN103383986 A CN 103383986A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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Abstract
The invention discloses a light-emitting diode dice with a wavelength conversion layer and a manufacturing method thereof. The dice comprises the wavelength conversion layer containing a substrate material and a plurality of particles embedded in the substrate material, the particles comprising wavelength conversion particles and reflection particles. The method for manufacturing the light-emitting diode dice comprising the steps of mixing wavelength conversion particles in a substrate material according to a first weight percentage, mixing reflection particles in the substrate material according to a second weight percentage, curing the substrate material for forming a wavelength conversion layer with the designated thickness, and attaching the wavelength conversion layer to a dice body.
Description
Technical field
The present invention is the continuity case of U.S.'s application for a patent for invention sequence number 13/229,824, and its applying date is on 09 12nd, 2011, be can with its merging reference.
The invention relates to LED crystal particle, particularly about having the LED crystal particle of wavelength conversion layer, and for the manufacture of a method of the LED crystal particle with wavelength conversion layer.
Background technology
Light-emitting diode (light emitting diode, LED) crystal grain (dice) is to develop to produce white light.In order to produce white light, a blue light-emitting diode crystal grain is can make to make up with a wavelength conversion layer, for example be formed on crystal grain (die (and a lip-deep fluorescent layer (phosphor layer).The electromagnetic radiation of being launched by blue light diode crystal grain is the atom (atoms) of excitation wavelength conversion layer, and it is that some electromagnetic radiation in blue wavelength spectral region (blue wavelength spectral region) is transformed into yellow wavelengths spectral region (yellow wavelength spectral region).Blue ratio to yellow be by wavelength conversion layer consist of (composition) and how much (geometry) controlled so that white light appears in the output of light-emitting diode.
In the LED crystal particle of this kenel, the characteristic of white light is determined by the electromagnetic radiation skill of launching from blue light-emitting diode crystal grain and the wavelength conversion characteristics of wavelength conversion layer.For instance, the color of composition white light is the spectrum distribution that depends on the electromagnetic radiation that is produced by blue light-emitting diode crystal grain and wavelength conversion layer.Any variation in these spectrum distribution is to change the color that forms white light that is produced by light-emitting diode assembly.Because the variation in the framework of blue light-emitting diode crystal grain and wavelength conversion layer, so white light is the characteristic that can have a undesired color balance (undesirable color balance) and lack realistic colour reduction (true color rendition).
Therefore because any damage for wavelength conversion layer is the output that can change crystal grain during manufacture, be difficult to produce the have uniform color balance one white light emitting diode crystal grain of (color balance).The present invention is the method that proposes for the manufacture of the LED crystal particle with wavelength conversion layer.
Summary of the invention
Main purpose of the present invention is to provide a kind of LED crystal particle and manufacture method thereof with wavelength conversion layer, to solve the existing problem of above-mentioned prior art.
In order to achieve the above object, the invention provides a kind of LED crystal particle with wavelength conversion layer, be to comprise a wavelength conversion layer, this wavelength conversion layer is to comprise the base material with a selected thickness and have a selected size and concentration and be embedded in a plurality of particles in this base material.These a plurality of particles are to comprise some wavelength conversion particles and some reflective particles, these a plurality of wavelength conversion particles are to have one first radius and percentage by weight in this base material, and these a plurality of reflective particles are to have one second radius and percentage by weight in this base material.These a plurality of wavelength conversion particles are also can comprise the particle of different kenels, and these particles are comprised of the different materials that has some selected radiuses and concentration in this base material.This LED crystal particle is also can consist of as a straight-down negative light-emitting diode (vertical light emitting diode; VLED) crystal grain or an as plane formula light-emitting diode (planar light emitting diode, PLED) crystal grain.
Wherein, these a plurality of wavelength conversion particles comprise the particle of different kenels, and the particle of these a plurality of different kenels is comprised of the different materials that has selected radius and concentration in this base material.
Wherein, this LED crystal particle is to comprise a straight-down negative LED crystal particle, and it is to have this wavelength conversion layer on this N-shaped limitation layer.
Wherein, this wavelength conversion layer comprises a perforate, and this perforate is to calibrate mutually with the n electrode on this N-shaped limitation layer.
Wherein, this LED crystal particle is to comprise a plane formula LED crystal particle, is to have this wavelength conversion layer on this p-type limitation layer.
Wherein, this wavelength conversion layer comprises one first perforate and one second perforate, and this first perforate is to calibrate mutually with the n electrode on this N-shaped limitation layer, and this second perforate is to calibrate mutually with the p electrode on this p-type limitation layer.
Wherein, this wavelength conversion layer has the thickness less than 100 μ m.
Wherein, these a plurality of reflective particles comprise a material, and this material is to be selected from following group: silicones and epoxy resin.
Wherein, this base material comprises a material, and this material is to be selected from following group: TiO
2, Al
2O
3, and SiO
2
Wherein, this first radius of these a plurality of wavelength conversion particles is that the one average particle size is to be appointed as D50 from 8 μ m to 40 μ m.
Wherein, this of these a plurality of reflective particles the second radius is from 10nm to 500nm, and the one average particle size is to be appointed as D50.
Wherein, this first percentage by weight of a plurality of wavelength conversion particles of this in this base material is from 10wt% to 85wt%.
Wherein, this second percentage by weight of these a plurality of reflective particles in this base material is from 0.1wt% to 10wt%.
Wherein, this N-shaped limitation layer is that framework is transmitted in the electromagnetic radiation in a blue light spectral range, and to be framework at this wavelength conversion layer on this substrate convert some electromagnetic radiation in this blue light spectral range at least in a gold-tinted spectral range electromagnetic radiation.
In order to achieve the above object, the present invention also provides a kind of method for the manufacture of LED crystal particle, be comprise the following steps: to provide have one want the LED crystal particle of framework (desired configuration); The base material of viscous (viscous form) is provided; A plurality of wavelength conversion particles with Radius of one are provided; And provide a plurality of reflective particles with one second radius.The method is also to comprise the following steps: these a plurality of wavelength conversion particles in this base material are mixed into one first percentage by weight; These a plurality of reflective particles in this base material are mixed into one second percentage by weight; And this base material is solidified into a selected thickness has formed a wavelength conversion layer.The method is also to comprise the following steps: this wavelength conversion layer is attached to this crystal grain; And form some perforates (openings) and calibrate mutually with the one or more electrodes on crystal grain at this wavelength conversion layer.
Wherein, further be included in and form a plurality of perforates in this wavelength conversion layer, these a plurality of perforates are to calibrate mutually with the one or more electrodes on this LED crystal particle.
Wherein, this wavelength conversion layer should selected thickness be less than 100 μ m.
Wherein, these a plurality of reflective particles are to comprise a material, and this material is to be selected from following group: silicones and epoxy resin.
Wherein, this base material is to comprise a material, and this material is to be selected from following group: TiO
2, Al
2O
3, and SiO
2
Wherein, this LED crystal particle is to comprise a straight-down negative light-emitting diode, and this attachment steps is to comprise this wavelength conversion layer is attached to this N-shaped limitation layer.
Description of drawings
Fig. 1 means the schematic cross-section of the LED crystal particle with a wavelength conversion layer.
Fig. 2 means the amplification schematic cross-section of a wavelength conversion layer of looking at the 1st figure section along the line 2-2.
Fig. 3 means the amplification schematic cross-section of another wavelength conversion layer of looking at the 1st figure section along the line 2-2.
Fig. 4 means that the present invention has the schematic cross-section of one second LED crystal particle of a wavelength conversion layer.
Fig. 5 represents that respectively the present invention is as the flow chart of the 1st figure for the manufacture of a method step of LED crystal particle.
Description of reference numerals: 30-LED crystal particle; The 32-electrically-conductive backing plate; 34-n type limitation layer; 36-multiple quantum well layer; 38-p type limitation layer; 40-is of heap of stone brilliant stacking; The 42-wavelength conversion layer; The 44-n electrode; The 46-p electrode; The 48-base material; 50-wavelength conversion particles; The 52-reflective particle; The 54-perforate; 60-plane formula LED crystal particle; The 62-transparency carrier; 64-is of heap of stone brilliant stacking; 66-n type limitation layer; 68-multiple quantum well layer; 70-p type limitation layer; The 72-transparency conducting layer; The 74-p electrode; The 76-n electrode; The 78-wavelength conversion layer; 80-the first perforate; 82-the second perforate; The 42A-wavelength conversion layer; The 48A-base material; 50A-the first wavelength conversion particles; 50B-second wave length conversion particles; The 52A-reflective particle; T-thickness.
Embodiment
Be appreciated that, when an element is illustrated as when another element " on (on) ", its be can be directly on another element or be to have insertion element (intervening elements).Yet term means there is no insertion element for " directly (directly) ".Moreover, although being " first (first) ", " second (second) ", " the 3rd (third) ", term makes to describe different elements, these elements should not limited by these terms.And, unless the different sample plots definition, all terms are to tend to have as whom know the equivalent that this technical field person understands.
Please refer to Fig. 1, is to illustrate a LED crystal particle 30.LED crystal particle 30 is a straight-down negative light-emitting diode (vertical light emitting diode) kenel.In order to simplify, be can not show the different elements of LED crystal particle 30.Yet this kenel of LED crystal particle 30 is at U.S. Patent number US7, and 615,789 have further description, and it is to merge in the text reference.Although LED crystal particle 30 is to be described as a straight-down negative light-emitting diode, but it can be appreciated that, concept described in literary composition is the LED crystal particle that also can be applicable to other kenels, for example has the LED crystal particle of plane electrode framework (planar electrode configurations).
LED crystal particle 30 is to comprise an electrically-conductive backing plate 32 and brilliant stacking (the epitaxial stack) 40 of heap of stone on electrically-conductive backing plate 32.Of heap of stone brilliant stacking 40 is to comprise N-shaped limitation layer (confinement layer) 34, one multiple quantum well (multiple quantum well, MQW) layer 36 and one p-type limitation layer 38, multiple quantum well layer 36 is to contact with N-shaped limitation layer 34 and framework is launched electromagnetic radiation, and p-type limitation layer 38 is to contact with multiple quantum well layer 36.
Preferably, N-shaped limitation layer 34 is to comprise n-GaN.For N-shaped limitation layer 34, other materials that are fit to comprise n-AlGaN, n-InGaN, n-AlInGaN and n-AlN.Preferably, multiple quantum well layer 36 is to comprise one or more quantum wells, and each quantum well is InGaN/GaN, AlGaInN, AlGaN, AlInN and the AlN that comprises one or more layers.But multiple quantum well layer 36 is frameworks comes that (namely 400～770nm), (namely 400～450nm), (namely 450～490nm), (namely 490～560nm), (namely 560～590nm), orange spectral range (namely 590～635nm) or ruddiness spectral range (i.e. 635～700nm) electromagnetic radiation-emittings for the gold-tinted spectral range for the green glow spectral range for the blue light spectral range for the purplish blue spectral range from the visible light spectrum scope.Preferably, p-type limitation layer 38 is to comprise p-GaN.For p-type limitation layer 38, other materials that are fit to comprise p-AlGaN, p-InGaN, p-AlInGaN, p-AlInN and n-AlN.
Please still with reference to figure 1, LED crystal particle 30 is also to comprise a n electrode 44 and a p electrode 46, and wherein, n electrode 44 is that p electrode 46 is on the dorsal part of electrically-conductive backing plate 32 (backside) on N-shaped limitation layer 34.N electrode 44 and p electrode 46 are to comprise an electric conducting material, a simple layer of a metal, a metal alloy or a metal stack for example, described metal for example ': W, Ti, Mo, Al, Cu, Ni, Ag, Au or Co, described metal alloy is for example: Cu-Co or Cu-Mo, described metal stack is Ni/Cu or Ni/Cu-Mo for example.
LED crystal particle 30 is also to comprise a wavelength conversion layer 42, and wavelength conversion layer 42 is formed on of heap of stone brilliant stacking 40 and with N-shaped limitation layer 34 and contacts.Wavelength conversion layer 42 is to have a thickness T on N-shaped limitation layer 34, and comprises that a perforate (opening) 54, perforate 54 are to calibrate mutually with n electrode 44, enter into n electrode 44 to provide.Preferably, the thickness T of wavelength conversion layer 42 is less than 100 μ m, and more more preferably, it is less than 50 μ m.
To be frameworks be transformed into the electromagnetic radiation with a different wavelength range with some electromagnetic radiation of being launched by multiple quantum well layer 36 at least to wavelength conversion layer 42, for example a upper wavelength scope.For instance, if multiple quantum well layer 36 is transmitted in the electromagnetic radiation of a blue light spectral range, but wavelength conversion layer 42 to be frameworks be transformed into a gold-tinted spectral range with some this radiation at least so that white light appears in the output of LED crystal particle 30.Because wavelength conversion layer 42 has the thickness T less than 100 μ m, therefore, be to reduce or to eliminate at the produced simultaneously gold-tinted ring of the radiation of gold-tinted spectral range (yellow ring).
As shown in Figure 2, wavelength conversion layer 42 is can comprise a base material 48, be embedded in a plurality of wavelength conversion particles 50 in base material 48 and be embedded in a plurality of reflective particles 52 in base material 48.
As shown in table 1, the particle size that is used for wavelength conversion particles 50 is to affect simultaneously relative brightness (%) and the color uniformity (color uniformity) of the electromagnetic radiation that produced by LED crystal particle 30.Generally speaking, an average particle size be appointed as D50 than small particle size, be to produce relatively poor relative brightness, but have the better color uniformity.On the contrary, be to produce better relative brightness than the macroparticle size, but have the relatively poor color uniformity.
Table 1
| Particle size (D50, μ m) | Relative brightness (%) | The color uniformity |
| 15 | 111 | Can accept (Acceptable) |
| 11 | 107 | Well (Good) |
| 8 | 104 | Better (Better) |
| 5 | 100 | Best (Best) |
As shown in Figure 3, another wavelength conversion layer 42A can comprise a base material 48A, is embedded in a plurality of the first wavelength conversion particles 50A in base material 48A, is embedded in a plurality of second wave length conversion particles 50B in base material 48A and is embedded in a plurality of reflective particle 52A in base material 48A.These all elements are to be equivalent to aforesaid element.Yet, the first wavelength conversion particles 50A can comprise one first battalion's light mixture, the blunderbuss calcium (calcium scandate) of the alkaline earth silicon-nitrogen compound of YAG:Ce, TAG:Ce, doping Eu (alkaline earth silicon nitride), doped Ce for example, the two wavelength conversion particles 50B that cut can comprise one second fluorescent mixture, the alkaline-earth silicate of the Eu that for example adulterates (alkaline earth silicate).The first wavelength conversion particles 50A and second wave length conversion particles 50B also can have different size and concentration in base material.
Please refer to Fig. 4, is to illustrate a plane formula LED crystal particle 60.LED crystal particle 60 is to comprise a transparency carrier 62 and the crystalline substance stacking 64 of heap of stone on transparency carrier 62.Of heap of stone brilliant stacking 64 is to comprise N-shaped limitation layer 66, one a multiple quantum well layer 68 and p-type limitation layer 70, wherein, multiple quantum well layer 68 is to be electrically connected tactile also framework with N-shaped limitation layer 66 to come electromagnetic radiation-emitting, and p-type limitation layer 70 is to be electrically connected tactile with multiple quantum well layer 68.Plane formula LED crystal particle 60 is also to comprise a transparency conducting layer 72 and the p electrode 74 on p-type limitation layer 70.Plane formula LED crystal particle 60 is n electrodes 76 that also are included on N-shaped limitation layer 66.Plane formula LED crystal particle 60 is also to comprise a wavelength conversion layer 78, and wavelength conversion layer 78 is to have one first perforate 80 and one second perforate 82, the first perforates 80 are to calibrate mutually with n electrode 76, and the second perforate 82 is to calibrate mutually with p electrode 74.But wavelength conversion layer 78 is framework wavelength conversion layers 42 (as shown in Figure 2) with wavelength conversion particles and reflective particle as above generally, or the wavelength conversion layer (as shown in Figure 3) with a plurality of wavelength conversion particles 50A, 50B and reflective particle 52A as above.
Please refer to Fig. 5, is the step that illustrates for the manufacture of a method of LED crystal particle 30.The step of the method is to comprise: the step that a plurality of LED crystal particle of a selected framework are provided in the upper formation of a wafer (wafer) (or providing).For instance, each LED crystal particle is to comprise straight-down negative light-emitting diode (VLED) crystal grain or plane formula light-emitting diode (PLED) crystal grain, and it is as aforementioned haply.Moreover the method is to use a plurality of separation crystal grain (dice) that are included on a wafer to realize in wafer scale.For instance, the straight-down negative LED crystal particle is to use in wafer scale the processing procedure manufacturing of prior art, for example disclosed in US Patent No. 7,195,944B2 (Tran et al.) and US Patent No. 7,615,789B2 (Tran), these two patents are to merge in this article reference.LED crystal particle also can be provided by a manufacturer, for example Semile Corporation of Boise ID and Hsingchu County Taiwan.
The method is also to comprise: the step that a base material of a viscous is provided.This base material is to comprise a curable polymer (curable polymer), for example have one want silicones (silicone) and the epoxy resin (epoxy) of chemical composition.
The method is also to comprise: a plurality of wavelength conversion particles with one first radius and the step with a plurality of reflective particles of one second radius are provided.For instance, the wavelength conversion particles is the Radius that can have from 8 μ m to 40 μ m, and its average particle size is to be appointed as D50, and reflective particle is the Radius that can have from 10nm to 500nm, and its average particle size is to be appointed as D50.
The method is also to comprise: the wavelength conversion particles in base material is mixed into one first percentage by weight, the reflective particle in base material is mixed into one second percentage by weight and base material is solidified into selected thickness has the step of a plurality of wavelength conversion layers of a selected thickness T with formation.One percentage by weight (wt.%) of the wavelength conversion particles in base material can be from 10wt% to 85wt%.One percentage by weight (wt.%) of the reflective particle in base material can be from 0.1wt% to 10wt%.One thickness T of wavelength conversion layer can be from 20 μ m to 100 μ m.In order to carry out these steps, wavelength conversion particles and reflective particle are to use one be mixed and be mixed in the base material of viscous, to form a viscous mixture (viscous mixture), afterwards, but to be e be solidified into solid shape (solid form) for it.Be a stripping film (release film) that may be used on using a coating process (coating process) after this mixture, coating process is for example dip coating, rod coating, blade coating, knife coating, air knife coating, Gravure coating, roll coating or slot and extrusion coating.Moreover wavelength conversion layer is the multilayer (multiple layers) that can comprise a simple layer or use a plurality of coating process (multiple coating processes).Illustrated coating process is the 1st chapter (the 1st～20 page) that further describes at Modern Coating And Drying Technology, the author is Edward D.Cohen, name is called " Choosing The Coating Method ", and it is to merge from herein reference.One illustrative stripping film is to comprise the Americas by AGC Chemical, a fluoropolymer resin (fluoropolymer resin) of Inc. manufacturing under trade mark FLUON.After being connected on the curing process with mixture solid, the wavelength conversion layer of solid shape is to use the suitable processing procedure as peeling that stripping film is separated.
The method is also to comprise: the step that wavelength conversion layer is attached to crystal grain.In order to carry out this step, a thin slice (sheet) that comprises a plurality of wavelength conversion layers is to cut (cut) so that each wavelength conversion layer have one want size and circumference shaped.Be to use a suitable processing procedure to process and be seated on LED crystal particle after each wavelength conversion layer, this suitable processing procedure is vacuum wand for example.Moreover, be to make to adhere to (stickup) wavelength conversion layer as the viscose glue (adhesive) of an adhesive polymer (adhesive polymer).
The method is also to comprise: the step that forms some perforates of calibrating mutually with the one or more electrodes on crystal grain at wavelength conversion layer.This step is can use as a light shield (mask) of a photoresistance light shield (photoresist mask) to realize, and use a suitable etching solution (etchant) be formed on one wanted to have in kenel one wanted the perforate of size.This step is also can be in the front execution of the step that wavelength conversion layer is attached to LED crystal particle.
The method is also can comprise: the step that wafer cutting (singulating) is become LED crystal particle.This cutting step is to realize with the suitable processing procedure as sawing, jetting or etching.
Therefore, the present invention is an improvement method of describing for the manufacture of the light-emitting diode assembly with wavelength conversion layer.When aforementioned be during for various embodiments of the present invention, of the present invention other or further embodiment can be designed out and need not violate its base region, and its base region is defined by following claim.Although the present invention makes an explanation with relevant preferred embodiment, this is not construed as limiting the invention.It should be noted that those skilled in the art can construct a lot of other similar embodiment according to thought of the present invention, these are all in protection scope of the present invention.
Claims (20)
1. the LED crystal particle with wavelength conversion layer, is characterized in that, comprising:
One substrate, comprise that one is of heap of stone brilliant stacking, should be of heap of stone brilliant stacking be to comprise N-shaped limitation layer one a multiple quantum well layer and p-type limitation layer, and this multiple quantum well layer is to contact with this N-shaped limitation layer and framework comes electromagnetic radiation-emitting, and this p-type limitation layer is to contact with this multiple quantum well layer;
One wavelength conversion layer is to be positioned on this substrate, and framework is transformed into the electromagnetic radiation with a different wavelength range with some electromagnetic radiation of being launched by this multiple quantum well layer at least,
This wavelength conversion layer comprises the base material with a selected thickness and a plurality of particles that are embedded in this base material and have a selected size and concentration,
These a plurality of particles are to be included in a plurality of wavelength conversion particles with one first radius and one first percentage by weight in this base material and a plurality of reflective particles with one second radius and one second percentage by weight in this base material.
2. according to claim 1 the LED crystal particle with wavelength conversion layer, it is characterized in that, these a plurality of wavelength conversion particles comprise the particle of different kenels, and the particle of these a plurality of different kenels is comprised of the different materials that has selected radius and concentration in this base material.
3. according to claim 1 the LED crystal particle with wavelength conversion layer, is characterized in that, this LED crystal particle is to comprise a straight-down negative LED crystal particle, and it is to have this wavelength conversion layer on this N-shaped limitation layer.
4. according to claim 3 the LED crystal particle with wavelength conversion layer, is characterized in that, this wavelength conversion layer comprises a perforate, and this perforate is to calibrate mutually with the n electrode on this N-shaped limitation layer.
5. according to claim 1 the LED crystal particle with wavelength conversion layer, is characterized in that, this LED crystal particle is to comprise a plane formula LED crystal particle, is to have this wavelength conversion layer on this p-type limitation layer.
6. according to claim 5 the LED crystal particle with wavelength conversion layer, it is characterized in that, this wavelength conversion layer comprises one first perforate and one second perforate, this first perforate is to calibrate mutually with the n electrode on this N-shaped limitation layer, and this second perforate is to calibrate mutually with the p electrode on this p-type limitation layer.
7. according to claim 1 the LED crystal particle with wavelength conversion layer, is characterized in that, this wavelength conversion layer has the thickness less than 100 μ m.
8. according to claim 1 the LED crystal particle with wavelength conversion layer, is characterized in that, these a plurality of reflective particles comprise a material, and this material is to be selected from following group: silicones and epoxy resin.
9. according to claim 1 the LED crystal particle with wavelength conversion layer, is characterized in that, this base material comprises a material, and this material is to be selected from following group: TiO
2, Al
2O
3, and SiO
2
10. according to claim 1 the LED crystal particle with wavelength conversion layer, is characterized in that, this first radius of these a plurality of wavelength conversion particles is that the one average particle size is to be appointed as D50 from 8 μ m to 40 μ m.
11. the LED crystal particle with wavelength conversion layer according to claim 1 is characterized in that, this of these a plurality of reflective particles the second radius is from 10nm to 500nm, and the one average particle size is to be appointed as D50.
12. the LED crystal particle with wavelength conversion layer according to claim 1 is characterized in that, this first percentage by weight of a plurality of wavelength conversion particles of this in this base material is from 10wt% to 85wt%.
13. the LED crystal particle with wavelength conversion layer according to claim 1 is characterized in that, this second percentage by weight of these a plurality of reflective particles in this base material is from 0.1wt% to 10wt%.
14. the LED crystal particle with wavelength conversion layer according to claim 1, it is characterized in that, this N-shaped limitation layer is that framework is transmitted in the electromagnetic radiation in a blue light spectral range, and to be framework at this wavelength conversion layer on this substrate convert some electromagnetic radiation in this blue light spectral range at least in a gold-tinted spectral range electromagnetic radiation.
15. the method for the manufacture of LED crystal particle is characterized in that, is to comprise:
Provide have one want a LED crystal particle of framework;
Be provided at a base material of viscous;
A plurality of wavelength conversion particles and a plurality of reflective particle are provided, and these a plurality of wavelength conversion particles are to have one first radius, and these a plurality of reflective particles are to have one second radius;
These a plurality of wavelength conversion particles in this base material are mixed into one first percentage by weight, and these a plurality of reflective particles in this base material are mixed into one second percentage by weight;
This base material is solidified into a selected thickness, to form a wavelength conversion layer; And
This wavelength conversion layer is attached to this crystal grain.
16. the method for the manufacture of LED crystal particle according to claim 15, it is characterized in that, further be included in and form a plurality of perforates in this wavelength conversion layer, these a plurality of perforates are to calibrate mutually with the one or more electrodes on this LED crystal particle.
17. the method for the manufacture of LED crystal particle according to claim 15 is characterized in that, the selected thickness of this of this wavelength conversion layer be less than 100 μ m.
18. the method for the manufacture of LED crystal particle according to claim 1 is characterized in that, these a plurality of reflective particles are to comprise a material, and this material is to be selected from following group: silicones and epoxy resin.
19. the method for the manufacture of LED crystal particle according to claim 15 is characterized in that, this base material is to comprise a material, and this material is to be selected from following group: TiO
2, Al
2O
3, and SiO
2
20. the method for the manufacture of LED crystal particle according to claim 15 is characterized in that, this LED crystal particle is to comprise a straight-down negative light-emitting diode, and this attachment steps is to comprise this wavelength conversion layer is attached to this N-shaped limitation layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/463,874 | 2012-05-04 | ||
| US13/463,874 US8492746B2 (en) | 2011-09-12 | 2012-05-04 | Light emitting diode (LED) dice having wavelength conversion layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103383986A true CN103383986A (en) | 2013-11-06 |
Family
ID=49491732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101466080A Pending CN103383986A (en) | 2012-05-04 | 2013-04-24 | Light-emitting diode dice with wavelength conversion layer and manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2013236081A (en) |
| KR (1) | KR20130124229A (en) |
| CN (1) | CN103383986A (en) |
| TW (1) | TWI553916B (en) |
Cited By (3)
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|---|---|---|---|---|
| CN106054287A (en) * | 2016-08-03 | 2016-10-26 | 哈尔滨工业大学深圳研究生院 | Optical device structure unit of visible light wave band transform and optical device |
| CN106935697A (en) * | 2015-12-30 | 2017-07-07 | 晶元光电股份有限公司 | Light-emitting device and its manufacture method |
| US10522721B2 (en) | 2015-12-30 | 2019-12-31 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
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| TWI557943B (en) * | 2014-11-18 | 2016-11-11 | 錼創科技股份有限公司 | Electrode structure of light emitting device |
| DE102016114921A1 (en) * | 2016-08-11 | 2018-02-15 | Osram Opto Semiconductors Gmbh | silicone composition |
| KR102126130B1 (en) | 2018-10-23 | 2020-06-23 | 에스케이씨 주식회사 | Display module comprising surface-sealing layer and preparation method for the same |
| KR102189268B1 (en) | 2018-10-23 | 2020-12-09 | 에스케이씨 주식회사 | Film for protecting optical device and composition for the same |
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Also Published As
| Publication number | Publication date |
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| TW201349593A (en) | 2013-12-01 |
| KR20130124229A (en) | 2013-11-13 |
| JP2013236081A (en) | 2013-11-21 |
| TWI553916B (en) | 2016-10-11 |
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Application publication date: 20131106 |