LED encapsulation structure and its method for packing
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of LED encapsulation structure and its method for packing.
Background technology
LED has significant energy-conservation and life-span advantage as a forth generation lighting source.
LED encapsulation is a key link obtaining high-quality LED illumination light source, existing flip chip mounting method just like
Lower two kinds:First, use the week side of boss and top of fluorescence packing colloid (mixture of fluorescent material and silica gel) 2 directly in flip-chip 1
It is packaged (as shown in Figure 1), the inhomogeneities that this encapsulating structure is mixed due to fluorescent material, stress causes product report during cutting
Useless rate is high.Second, the week side of boss of flip-chip 1 is sealed (such as Fig. 2 using vertical plastic material 3, top using fluorescence packing colloid 4
It is shown).For this encapsulating structure because the vertical plastic material 21 of the week side of boss forms heat to the multiple reflections of light, light efficiency is low.
The content of the invention
For above-mentioned state of the art, the technical problems to be solved by the invention are, there is provided a kind of simple in construction, light
Damage low LED encapsulation structure and its method for packing.
In order to solve the above-mentioned technical problem, a kind of LED encapsulation structure provided by the present invention, including:
Catoptric arrangement part, the catoptric arrangement part have cavity, in the upper surface of the catoptric arrangement part and lower surface point
The open top connected with the cavity and bottom opening are not provided with;
LED flip chip, the LED flip chip is located in the cavity, and the electrode surface court of the LED flip chip
To the bottom opening;And
Packing colloid, the packing colloid are filled in the cavity to encapsulate the LED flip chip.
In one of the embodiments, the catoptric arrangement part is moulding.
In one of the embodiments, the longitudinal section of the inwall of the cavity is in herringbone.
In one of the embodiments, inwardly projecting flange is provided with the inwall of the cavity bottom, the LED falls
The either flush of the electrode surface of cartridge chip and the flange.
In one of the embodiments, the lateral surface of the catoptric arrangement part hangs down with the upper surface and the lower surface
Directly.
In one of the embodiments, the electrode of the LED flip chip stretches out from the bottom opening, and the electrode
End face it is concordant with the lower surface.
In one of the embodiments, it is mixed with fluorescent material in the packing colloid.
In one of the embodiments, the top surface of the packing colloid is concordant with the upper surface of the catoptric arrangement part.
A kind of method for packing of above-mentioned LED encapsulation structure provided by the present invention, comprises the following steps:
A, it is molded to form catoptric arrangement part sheet material using plastic material, it is in square on the catoptric arrangement part sheet material to have some
The cavity of battle array arrangement;
B, counterdie is pasted on the lower surface of the catoptric arrangement part sheet material, closes the bottom opening of the cavity;
C, the flip-chip is put into the cavity and carries out die bond, the electrode of the flip-chip abuts against the bottom
On film;
D, encapsulating material is injected in the cavity, forms the packing colloid;
E, packing colloid described in baking-curing;
F, cut the catoptric arrangement part sheet material and form the catoptric arrangement part;And
G, the counterdie is removed.
In one of the embodiments, in step f, the high-temperature machining under baking temperature, and it is cut to the carrier film thickness
1/2~3/4 at.
In one of the embodiments, in step a, the plastic material is modified poly- terephthalate p-phenylenediamine plastics,
Poly terephthalic acid 1,4-CHDM ester resin or epoxy film resin.
Compared with prior art, LED encapsulation structure of the invention, the light that flip-chip is sent can be directly emitted downwards,
The light part sent upwards can be emitted directly through packing colloid, and the upward another part light projection sent is in cavity
By can also pass through fluorescence packing colloid, overall light efficiency height after reflection on inwall.
Beneficial effect possessed by additional technical feature of the present invention will be said in this specification specific embodiment part
It is bright.
Brief description of the drawings
Fig. 1 is a kind of structural representation of the Flip-Chip Using of prior art;
Fig. 2 is another structural representation of the Flip-Chip Using of prior art;
Fig. 3 is the structural representation of the LED encapsulation structure in the one of embodiment of the present invention;
Fig. 4 is the schematic diagram of the right-angled trapezium plasticity catoptric arrangement part network structure of the LED encapsulation method of the present invention;
Fig. 5 is the schematic diagram of attached heat resistant plastics' counterdie of the LED encapsulation method of the present invention;
Fig. 6 is the schematic diagram of the die bond of the LED encapsulation method of the present invention;
Fig. 7 is the schematic diagram of the injecting glue of the LED encapsulation method of the present invention;
Fig. 8 is the schematic diagram of the cutting of the LED encapsulation method of the present invention.
In Fig. 3-Fig. 8,10-LED flip-chips;The electrode surface of 11-LED flip-chips;12- electrodes;20- catoptric arrangements
Part;21- cavitys;21a- open tops;21b- bottom openings;The upper surface of 22- catoptric arrangement parts;Under 23- catoptric arrangement parts
End face;24- flanges;The inwall of 25- cavitys;The lateral surface of 26- catoptric arrangement parts;30- packing colloids;40- catoptric arrangement part plates
Material;50- counterdies;60- lines of cut.
Embodiment
Below with reference to the accompanying drawings and the present invention is described in detail in conjunction with the embodiments.It should be noted that do not conflicting
In the case of, the feature in following embodiment and embodiment can be mutually combined.
Fig. 3 is the structural representation of the LED encapsulation structure in the one of embodiment of the present invention.As illustrated, LED is encapsulated
Structure includes:Catoptric arrangement part 20, LED flip chip 10 and packing colloid 30, wherein, the catoptric arrangement part 20 is injection
Part, catoptric arrangement part 20 have cavity 21, be respectively arranged with the upper surface 22 of the catoptric arrangement part 20 and lower surface 23 with
The open top 21a and bottom opening 21b that the cavity 21 connects.Preferably, the longitudinal section of the inwall 25 of the cavity 21 is in
Herringbone, the light reflection effect of inwall 25 of the cavity 21 are good.Preferably, it is provided with the inwall 25 of the bottom of cavity 21
Inwardly projecting flange 24, the flange 24 are used to position LED flip chip 10.Preferably, the catoptric arrangement part 20 is outer
Side 26 is vertical with the upper surface 22 and the lower surface 23, to facilitate processing.
The LED flip chip 10 is located in the cavity 21, and the electrode surface 11 of the LED flip chip 10 is towards institute
State bottom opening 21b, the either flush of the electrode surface 11 of the LED flip chip 10 and the flange 24, the LED upside-down mountings core
The electrode 12 of piece 10 stretches out from the bottom opening 21b, and the end face of the electrode 12 is concordant with the lower surface 23, in order to
Direct welding circuit uses.
The packing colloid 30 is filled in the cavity 21 (not shown in Fig. 3) to encapsulate the LED flip chip 10.
For LED encapsulation structure in the embodiment of the present invention as a result of said structure, the light that flip-chip 10 is sent is downward
Can directly it be emitted from bottom opening 21b, the light part sent upwards can be emitted directly through packing colloid, upward hair
Another part light projection gone out on the inwall of cavity by reflection after can also pass through fluorescence packing colloid, overall light efficiency is high.
Present invention also offers a kind of method for packing of above-mentioned LED encapsulation structure, as shown in Fig. 4-Fig. 8, method for packing bag
Include following steps:
Step a, it is molded to form catoptric arrangement part sheet material 40 using plastic material, has on the catoptric arrangement part sheet material 40
Some cavitys 21 (as shown in Figure 4) in matrix arrangement.Plastic material preferably is selected from being modified poly- terephthalate p-phenylenediamine PPA
Plastics, poly terephthalic acid 1,4-CHDM ester PCT resins, epoxy film EMC resins.Wherein isosceles trapezoid plasticity reflects
Two hypotenuses of structural member 23 form one and fall eight word cavitys.
Step b, counterdie 50 is pasted on the lower surface of the catoptric arrangement part sheet material 40, opens the bottom of the cavity 21
Mouth 21b closings (as shown in Figure 5).Counterdie 50 is preferably heat resistant plastics' film.
Step c, flip-chip 10 is put into the cavity 21 and carries out die bond, the electrode 12 of the flip-chip 10 abuts
On the counterdie 50 (as shown in Figure 6).
Step d, encapsulating material is injected in the cavity 21, forms the packing colloid 30.Encapsulating material height with it is anti-
The upper surface for penetrating structural member sheet material 40 is concordant (as shown in Figure 7).
Step e, packing colloid 30 described in baking-curing.Preferably, 30~60min, temperature are solidified at 150 ± 5 DEG C of temperature
Spending the setting of section can accordingly be adjusted according to encapsulating material difference.
Step f, after solidifying, catoptric arrangement part sheet material 40 is cut along line of cut 50 under baking temperature, cut
To at the plasticity net bottom film thickness 1/2~3/4, the catoptric arrangement part 20 is formed.High-temperature machining, made in the absence of cutting stress
Into scrapping, high yield rate, manufacturing cost is low.
Step g, counterdie 40 is removed, sorting obtains required LED encapsulation structure.
It was found from technical scheme above, pass through the obtained LED encapsulation structure of LED encapsulation method of the present invention, upside-down mounting core
The light that piece is sent can be emitted downwards between, and the light part sent upwards can be emitted directly through fluorescence packing colloid, and
The upward another part light projection sent both sides right-angled trapezium plasticity catoptric arrangement part light by reflection after can also pass through
Fluorescence packing colloid, overall light efficiency is high, and cutting stress is also not present and causes to scrap, high yield rate, and manufacturing cost is low.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.