US20170108655A1 - Photonic package architecture - Google Patents
Photonic package architecture Download PDFInfo
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- US20170108655A1 US20170108655A1 US15/394,672 US201615394672A US2017108655A1 US 20170108655 A1 US20170108655 A1 US 20170108655A1 US 201615394672 A US201615394672 A US 201615394672A US 2017108655 A1 US2017108655 A1 US 2017108655A1
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- die
- front side
- backside
- optical coupler
- photon emitter
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4238—Soldering
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4266—Thermal aspects, temperature control or temperature monitoring
- G02B6/4268—Cooling
- G02B6/4269—Cooling with heat sinks or radiation fins
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
Abstract
A photonic package includes a photonic device having a photon emitter on the front side of the die. A beam of photons from the photon emitter passing from the front side to the backside of the die, passes through the substrate material of the die which is substantially transparent to the beam of photons, to the backside of the die. Other embodiments are also described.
Description
- Electronic components are frequently placed on a shared substrate in multi-chip modules (“MCM”). By packing a number of semiconductor devices in close proximity to each other, individual packages for each of the devices may be eliminated. Furthermore, electrical performance is often improved, and board space and cost may be reduced.
- In a conventional MCM, the devices are connected to a substrate and the electrical connection among the devices may be accomplished within the substrate, which may also be an integral part of the MCM package. One of the technologies used to connect the devices to the substrate is called flip chip or control collapse chip connection (“C4”). With this technology, solder bumps are reflowed to make connection to the terminal pads on the substrate.
- Photonic components, such as, but not limited to, photon emitters such as laser transmitters, photon detectors such as laser receivers, array waveguides, amplifiers, couplers, splitters, and other devices for carrying light-based (“photonic”) signals have often been manufactured using a different process than that for silicon based semiconductors. Thus, electronic components and photonic components have been manufactured on separate substrates using different processes and then interfaced together. However, more recently, advances have been made in fabricating photonic devices using manufacturing processes designed for silicon based semiconductors.
- Active opto-electronic modules such as 10 Gb/s laser transmitters and receivers have been produced in so-called “butterfly packages.” The butterfly package containing the laser device may be mounted in a heat sink which may include a thermoelectric cooler (TEC). Another packaging standard for photonic devices is known as a TO (Transistor Outline) can package leveraged from existing technology from lower data rate (1-2 Gbs) equipment.
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FIG. 1 illustrates anoptical assembly 10 of another opto-electronic module, which includes a multi-layer opto-electronic package 14 and areceptacle 12 that can be attached to the opto-electronic package 14. An optical fiber (not shown) may be attached to thereceptacle 12, thus putting the photonic components in optical communication with other devices. The opto-electronic package 14 can be either a transmitter or a receiver, and can therefore transmit signals to or receive signals from other optical components. - As shown in
FIG. 2 , the opto-electronic package 14 comprises a multi-layer stack including abase layer 22, aspacing layer 24 and an optical micro-electromechanical (MEMS)layer 26 comprising a MEMS microstage. Thebase layer 22 supports theentire package 14 and provides paths through which electrical signals and power can be delivered to photonic and other elements within the package. In addition, thebase layer 22 provides a heat transfer path for heat generated within thepackage 14 to escape. Various photonic and electronic elements are positioned or formed thereon. - Referring to
FIGS. 3 and 4 , thebase layer 22 is generally rectangular and is formed on asubstrate 32 which may be made of silicon. An edgeemitting laser diode 36 is attached on thesubstrate 32 and various other active or passive optical elements, such aslens 38 and turningmirror 39, are attached on the substrate to condition and direct a laser beam emanating from thelaser diode 36. One or more wire-bonding pads (not shown) provide attachment points for wires to provide electrical power, electrical signals, or both, as the case may be, to the electronic and photonic components on the base layer. The edge-emitting laser can be replaced with a vertical surface emitting laser (e.g., a VCSEL), in which case elements such as theturning mirror 39 can be omitted. Aseal ring 34 of metal or other material is formed at or near the perimeter of thesubstrate 32, and allows for control of the spacing between thebase layer 22 and thespacing layer 24, as well as to allow the base layer to form a hermetic seal with thespacing layer 24. - The
laser diode 36 emits a laser beam in the direction of thelens 38 which collimates the beam exiting the laser and directs the collimated beam toward theturning mirror 39, which turns the collimated laser beam out of the plane of thebase layer 22. The collimated beam is focused by the moveableoptical element 42 such that it is launched into the end of anoptical fiber 44. - The operation of the
base layer 22 described above is characteristic of a transmitter, but a receiver can also be constructed in which thelaser diode 36 is replaced with a photo-detector. The direction of the signal is reversed, such that a signal traveling through thefiber 44 is emitted from the fiber end and collimated by the moveableoptical element 42. The collimated signal is then turned about 90 degrees by the turningmirror 39, and directed toward theoptical element 38, which then focuses the incoming signal onto the photo-detector. - The
spacing layer 24 is attached on top of thebase layer 22, surrounds the photonic elements and provides hermeticity of the package. Thespacing layer 24 also includes provisions such as electrical traces to provide signals and/or power to theoptical MEMS layer 26. - Referring now to the drawings in which like reference numbers represent corresponding parts throughout:
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FIG. 1 schematically illustrates an assembly including a prior art opto-electronic module including a prior art opto-electronic package; -
FIG. 2 is an exploded view of the prior art opto-electronic package of FIG. 1; -
FIG. 3 is a plan view of the base layer of the opto-electronic package ofFIG. 2 ; -
FIG. 4 is a cross-sectional view of the base layer ofFIG. 3 illustrating the base layer as well as the positioning of an optical MEMs layer and an optical fiber relative to the base layer; -
FIG. 5 is a schematic cross-sectional view of a photonic package in accordance with one embodiment of the present description; -
FIG. 6a is a cross-sectional view of the photonic package ofFIG. 5 as viewed along the lines 6 a-6 a ofFIG. 5 ; -
FIG. 6b is a cross-sectional view of the photonic package ofFIG. 5 as viewed along thelines 6 b-6 b ofFIG. 5 ; -
FIG. 6c is a cross-sectional view of the photonic package ofFIG. 5 as viewed along thelines 6 c-6 c ofFIG. 5 ; -
FIG. 6d is a cross-sectional view of the photonic package ofFIG. 5 as viewed along thelines 6 d-6 d ofFIG. 5 ; -
FIG. 7 is a schematic cross-sectional view of the photonic die of the photonic package ofFIG. 5 ; -
FIG. 8 illustrates operations in accordance with one embodiment for assembling a photonic package in accordance with the present description; -
FIGS. 9a-9e are schematic cross-sectional diagrams illustrating the operations ofFIG. 8 for assembling a photonic package in accordance with the present description; -
FIG. 10 illustrates one embodiment of registration and alignment features for a photonic package in accordance with the present description; -
FIG. 11 illustrates operations in accordance with another embodiment for assembling a photonic package in accordance with the present description; -
FIGS. 12a-12d are schematic cross-sectional diagrams illustrating the operations ofFIG. 11 for assembling a photonic package in accordance with the present description; and -
FIG. 13 illustrates an embodiment of a system utilizing a photonic package in accordance with the present description. - In the following description, reference is made to the accompanying drawings which form a part hereof and which illustrate several embodiments of the present disclosure. It is understood that other embodiments may be utilized and structural and operational changes may be made without departing from the scope of the present description.
- In one feature of the present description, an opto-electronic device such as a photonic package includes a photonic device having a die which passes a beam of photons between the front side and the backside of the die through the substrate material of the die which is substantially transparent to the beam of photons. As explained in greater detail below, such an arrangement can, in one embodiment, facilitate assembly of the components of the photonic package. For example, an optical coupler may be affixed to the backside of the die of the photonic device to pass the beam of photons between an optical cable coupled to the optical coupler and the photonic element or elements of the photonic device. In one embodiment, registration features may be provided on the optical coupler and the back side of the die of the photonic device to facilitate optical alignment of the photonic device and the optical coupler. In one aspect, an optically transparent adhesive may be used to affix the optical coupler to the backside of the die of the photonic device to facilitate passage of the beam of photons between the photonic device and the optical coupler.
- In another aspect, a second die of an integrated circuit device containing integrated circuits such as driver circuits, may be electrically coupled to the front side of the die of the photonic device in a stacked arrangement to operate with integrated circuits and photonic elements of the photonic device. An interposer may be positioned on the front side of the photonic device to facilitate mechanical and electrical coupling of the stacked photonic and integrated circuit devices with a substrate such as a package substrate or a printed circuit board. In one aspect, the interposer provides a cavity of sufficient size to receive the second die in a space between the photonic device and the package or circuit board substrate.
- In yet another aspect, a heat sink may be affixed to the back side of the die of the photonic device to draw heat from one or both of the photonic device and the integrated circuit device coupled to the front side of the photonic device. In one embodiment, the heat sink may define a cavity to receive and secure the optical coupler. In another aspect, registration features may be provided on the heat sink and the back side of the die of the photonic device to facilitate optical alignment of the photonic device and the optical coupler. In one embodiment, a thermally transmissive adhesive may be used to affix the heat sink to the backside of the die of the photonic device to facilitate passage of heat energy from the photonic device to the heat sink.
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FIG. 5 shows aphotonic package 100 in accordance with one embodiment of the present description mounted on asubstrate 101 which may be a substrate of a printed circuit or a substrate of another package, for example. Thephotonic package 100 includes aphotonic die 102 which has one or moreintegrated photon emitters 104 such as a laser on thefront side 106 of thedie 102. Also integrated on thefront side 106 of thedie 102 is amirror 108 which is positioned to reflect a beam oflight 110 emitted from thephoton emitter 104 through thebody 112 of thedie 102, to theback side 114 of thedie 102. The semiconductor material of thebody 112 of thedie 102 is at least partially transparent to the wavelength emitted by thephoton emitter 104. In the illustrated embodiment, thebody 112 may be hundreds of microns thick. Other thicknesses may be used, depending upon the particular application. -
FIG. 6a-6d are cross-sectional views of the stack of components of thepackage 102. In the illustrated embodiment, thephoton emitter 104 emits fiveparallel beams 110 as shown inFIGS. 6b -6 d.FIG. 6b , a cross-sectional view as viewed along theline 6 b-6 b ofFIG. 5 , depicts the fivebeams 110 emerging from theback side 114 of thephotonic die 102. It is appreciated that one ormore photon emitters 104 may emit a fewer or greater number of beams in a photonic device in accordance with the present description, depending upon the particular application. - As shown in
FIG. 5 andFIG. 6c , a cross-sectional view as viewed along theline 6 c-6 c ofFIG. 5 , anoptical coupler 120 affixed to theback side 114 of thedie 102 includes amirror 122 positioned to reflect thebeams 110 emerging from theback side 114 of thedie 102, to a plurality oflens 124 which focus thebeams 110 to a fiber optic cable or otheroptical conduit 126 which may be coupled to the optical coupler 120 (FIG. 6d ) using suitable releasable retention features 125. In another aspect of the present description, theoptical coupler 120 may be received in acavity 130 of aheat sink 132 which draws heat energy from thephotonic die 102 and other integrated circuits of thepackage 100. In the illustrated embodiment, thepackage 100 includes asecond die 150 bonded to thefront side 106 of thephotonic die 102. Thesecond die 150 has integrated circuits including driver circuits for modulating thebeam 110 emitted by thephoton emitter 104. Thedie 150 may have other integrated circuits, depending upon the particular application. - In another aspect of the present description, an
interposer 160 of thepackage 100, supports and spaces the photonic die 102 from thesubstrate 101 to provide sufficient vertical space between thephotonic die 102 and thesubstrate 101 to permit thesecond die 150 to be bonded to thefront side 106 of thephotonic die 102 without interfering with the photonic die or thesubstrate 101. In addition, as best seen inFIG. 6a , a cross-sectional view as viewed along the lines 6 a-6 a ofFIG. 5 , theinterposer 160 defines acavity 162 which provides sufficient horizontal space within theinterposer 160 to permit thesecond die 150 to be bonded to the front side of thephotonic die 102 without interfering with theinterposer 160. - The
interposer 160 hasinternal conductors 164 which electrically connect the photonic die 102 to conductors of thesubstrate 101. Theinternal conductors 164 may be formed of conductive pins, conductive plugs, plated through holes and the like. -
FIG. 7 shows one embodiment of thephotonic die 102 in greater detail. The photonic die 102 includes abulk region 200 which occupies the majority of thedie 102. Thebulk region 200 of this embodiment is cut from a silicon wafer but it is appreciated that other semiconductor materials may be used. However, it is preferred that thebulk region 200 be substantially transparent to the wavelengths emitted by aphoton emitter 104 which in this embodiment, is a laser. In the illustrated embodiment, thephoton emitter 104 emits light primarily in the infrared region of the spectrum such as 1.55 micrometers, for example. Other wavelengths may be used, depending upon the particular application. - Disposed on the
bulk region 200 is anactive layer 202 on thefront side 106 of thedie 102. The active layer includesintegrated circuits 204 which include thephoton emitter 104. The integrated circuits may be formed by doping suitable semiconductor regions in theactive layer 202. Suitable integrated circuits may also be formed separately and bonded to the front side of thedie 102. - In the illustrated embodiment, the
photon emitter 104 may be an all silicon laser. It is appreciated that other photon emitter formation techniques may be used including silicon on insulator (SOI) or a hybrid silicon laser which is a semiconductor laser fabricated from both silicon and non-silicon materials such as group III-V semiconductor materials, for example. Other semiconductor materials and fabrication techniques may be used, depending upon the particular application. Also, although the beam source of thedie 102 is described as a laser, it is appreciated that other photon emitters may be utilized, depending upon the particular application. - The
active layer 202 of thedie 102 may further include additionalphotonic structures 210 including suitable photonic waveguides to guide the beam from thephoton emitter 104 to thebulk region 200 via themirror 108. Although thephoton emitter 104 is depicted as an edge emitting device, it is appreciated that thephoton emitter 104 may be positioned to emit a beam vertically such that mirrors such as themirror 108 may be eliminated in some applications. Thus, a beam may be emitted by a vertical photon emitter disposed on thefront side 106 of the die 102 such that the emitted beam passes directly through thebulk region 200 to thebackside 114 of thedie 102, without first being reflected by a mirror such as themirror 108 on the front side of thedie 102. - The
photonic structures 210 may include other photonic structures such as a modulator which modulates thebeam 110 as driven by suitable driver circuits such as the driver circuits of thedie 150, for example. The beam may be modulated to carry data to other devices via theoptical coupler 120 and a suitable optical cable connected to theoptical coupler 120. In some applications, theoptical coupler 120 may be eliminated. For example, a die having a suitable photoreceptor may be affixed directly or indirectly to thebackside 114 of thedie 102 wherein the photoreceptor is positioned to receive thebeam 110 from thedie 102. In other applications, an optical cable may be affixed directly or indirectly to thebackside 114 of thedie 102 wherein the optical cable is positioned to receive thebeam 110 from thedie 102 and direct the beam to other devices of the system. - In the illustrated embodiment, the
mirror 108 may be formed by etching a suitablebeveled surface 220 in theactive layer 202 at a suitable angle such as forty-five degrees, for example. Other angles may be provided depending upon the particular application. - The
surface 220 may be plated with a suitable lightreflective coating 222 such as a metallic coating. It is appreciated that other techniques may be used to form themirror 108, depending upon the particular application. For example, the material of theactive layer 202 may be sufficiently reflective such that a metallic or other reflective coating may be eliminated. In addition, other beveled surface formation techniques other than etching may be utilized as appropriate. - In the illustrated embodiment, the
surface 220 is angled to reflect thebeam 110 ninety degrees to redirect thebeam 110 from parallel to thefront side 106 to a direction transverse to thefront side 106 so that the reflected beam is redirected to pass through thebulk region 200 and emerge from thebackside 114 of thephotonic die 102. It is appreciated that in other embodiments, themirror surface 220 may be angled at other angles, depending upon the particular application. - The heat sink 132 (
FIG. 5 ) may be made of any suitable material such as copper for example, which facilitates drawing heat energy from the dies 102 and 150 and radiating that heat energy away from thepackage 102. As shown inFIG. 5 andFIG. 6d , a cross-sectional view as viewed along theline 6 d-6 d ofFIG. 5 , atop surface 250 of theheat sink 132 may extend over substantially all of thebackside 114 of the die 102 to facilitate radiating heat drawn from the dies 102 and 150. A bottom surface 252 (FIG. 5 ) of theheat sink 132 with the exception of theheat sink cavity 130 which receives theoptical coupler 120, extends over and is in thermal contact with most of thebackside 114 of the die 102 to facilitate drawing heat energy from the dies 102 and 150. In the illustrated embodiment, the heatsink bottom surface 252 covers those areas of the die 102 (and indirectly the die 150) which generate most of the heat energy. -
FIG. 8 andFIGS. 9a-9e depict one embodiment of operations to assemble a photonic package such as thepackage 100 of the illustrated embodiment. In one operation, the photonic die such as thedie 102 and a second die such as the driver circuit die 150 are assembled (block 300) in a die-to-die stack. In the illustrated embodiment, the stack of dies 102, 150 are in a “flip-chip” arrangement in which the front sides of the dies 102, 150 are facing each other. It is appreciated that a photonic die may be coupled to another die using other assembly techniques. - The contact pads or other electrical contact features on the front sides of the dies 102, 150 are aligned and bonded together using suitable bonding techniques. For example, the electrical contact features of the dies 102, 150 may be soldered using thermo-compression bonding as represented by the
bonds 302 ofFIG. 9a . The gap between the driver circuit die 150 and thephotonic die 102 may optionally be under filled with a suitable under fill layer as appropriate for the particular application. - An interposer such as the
interposer 160 may be assembled (block 310,FIG. 8 ) on a suitable substrate, such as thesubstrate 101 ofFIG. 9b . The contact pads or other electrical contact features on thesubstrate 101 and theinterposer 160 may be aligned and bonded together using suitable bonding techniques. For example, the electrical contact features of theinterposer 160 and thesubstrate 101 may be soldered using thermo-compression bonding as represented by thebonds 312 ofFIG. 9b . The gap between thesubstrate 101 and theinterposer 160 may optionally be under filled with a suitable under fill layer as appropriate for the particular application. - In another operation, the die-to-die stack of the
photonic die 102 and the driver circuit die 150 may be assembled (block 320,FIG. 8 ) onto theinterposer 160 on thesubstrate 101 as depicted inFIG. 9c . The contact pads or other electrical contact features onfront side 106 of thephotonic die 102 and theinterposer 160 may be aligned and bonded together using suitable bonding techniques. For example, the electrical contact features of theinterposer 160 and the die-to-die stack of thephotonic die 102 and the driver circuit die 150 may be soldered using thermo-compression bonding as represented by thebonds 322 ofFIG. 9b . The gap between thephotonic die 102 and theinterposer 160 may optionally be under filled with a suitable under fill layer as appropriate for the particular application. - An optical coupler, such as the
optical coupler 120 may be assembled (block 330,FIG. 8 ) to theback side 114 of thephotonic die 102 as shown inFIG. 9d . Themirror 122 of theoptical coupler 120 may be aligned with themirror 108 of thephotonic die 102 using suitable alignment techniques. For example, theoptical coupler 120 and theback side 114 of thephotonic die 102 may be aligned using registration features such as male and female beveled die features 332 (FIG. 10 ) carried on theback side 114 of thephotonic die 102, which are aligned with and mated with corresponding male and female beveled features 334 on theoptical coupler 120. In one embodiment, alignment features may have a size on the order of five microns, for example. Other sizes and other registration features may be utilized to align the optical coupler and the photonic die, depending upon the particular application. - As previously mentioned, the
beam 110 passing through the body of thephotonic die 102 emerges from theback side 114 of thephotonic die 102 and passes into theoptical coupler 120. In one aspect of the present description, an adhesive 336 which is substantially transparent to the wavelength or wavelengths of thebeam 110 may be used to affix theoptical coupler 120 to theback side 114 of the photonic die. It is appreciated that other techniques may be used to affix theoptical coupler 120 to theback side 114 of the photonic die in such a manner to permit thebeam 110 to be transmitted between thephotonic die 102 and theoptical coupler 120. - A heat sink such as the
heat sink 132, may be assembled (block 340,FIG. 8 ) to theoptical coupler 120 and to theback side 114 of thephotonic device 102 as shown inFIG. 9e . In the illustrated embodiment, a thermaladhesive layer 340 which facilitates transfer of thermal energy from thephotonic die 102 and theoptical coupler 120 may be used to affix theheat sink 132 to the portion of theback side 114 of thephotonic die 102 which is not occupied by theoptical coupler 120. Theadhesive layer 340 may also extend between theheat sink 132 and theoptical coupler 120 which is received within thecavity 130 of theheat sink 132. In one embodiment, the adhesive material of theadhesive layer 340 may have metallic particles to facilitate transfer of heat energy. It is appreciated that other techniques may be used to affix theheat sink 132 to theoptical coupler 120 and to theback side 114 of the photonic die in such a manner to facilitate drawing heat energy from thephotonic die 102 and theoptical coupler 120. - It is further appreciated that the components of a photonic package in accordance with the present description may be assembled in other manners and orders, depending upon the particular application. For example,
FIG. 11 andFIGS. 12a-12d depict another embodiment of operations to assemble a photonic package such as thepackage 100 of the illustrated embodiment. In one operation, a heat sink such as theheat sink 132 and an optical coupler, such as theoptical coupler 120 are assembled (block 400,FIG. 11 ) as shown inFIG. 12a using alayer 340 of thermal adhesive. The heat sink and optical coupler assembly may be assembledblock 410,FIG. 11 ) to theback side 114 of thephotonic die 102 as shown inFIG. 12b . Thelayer 340 of thermal adhesive may be extended between theheat sink 132 and theback side 114 of thephotonic die 102. An optically transparentadhesive layer 336 may be provided between theoptical coupler 120 and theback side 114 of thephotonic die 102. - Registration or other alignment features may be utilized to facilitate aligning the optical coupler and the photonic die, depending upon the particular application. The alignment features may be disposed on one or more of the heat sink, optical coupler and die. For example, the
optical coupler 120 and theback side 114 of thephotonic die 102 may be aligned using registration features such as male and female beveled die features 332 (FIG. 10 ) carried on theback side 114 of thephotonic die 102, which are aligned with and mated with corresponding male and female beveled features 334 on theoptical coupler 120. The heat sink and optical coupler assembly may be aligned with respect to each other in a similar manner. The heat sink (with the optical coupler attached) may be aligned with respect to the die in a similar manner. - In another operation, the die-to-die stack of the
photonic die 102 and the driver circuit die 150 may be assembled (block 430,FIG. 11 ) as depicted inFIG. 12c . The contact pads or other electrical contact features on front side of thephotonic die 102 and thedie 150 may be aligned and bonded together using suitable bonding techniques. For example, the electrical contact features of the die-to-die stack of thephotonic die 102 and the driver circuit die 150 may be soldered using thermo-compression bonding as represented by thebonds 302 ofFIG. 12c . The gap between thephotonic die 102 and die 150 may optionally be under filled with a suitable under fill layer as appropriate for the particular application. - In another operation, the die-to-die stack of the
photonic die 102 and the driver circuit die 150 (with theoptical coupler 120 and theheat sink 132 affixed to theback side 114 of the photonic die 102) may be assembled (block 440,FIG. 11 ) onto an interposer such as theinterposer 160 which has been preassembled onto thesubstrate 101 as depicted inFIG. 12d . The contact pads or other electrical contact features on front side of thephotonic die 102 and theinterposer 160 may be aligned and bonded together using suitable bonding techniques. For example, the electrical contact features of theinterposer 160 and the die-to-die stack of thephotonic die 102 and the driver circuit die 150 may be soldered using thermo-compression bonding as represented by thebonds 322 ofFIG. 12d . Other bonding techniques may be used. The gap between thephotonic die 102 and theinterposer 160 may optionally be under filled with a suitable under fill layer as appropriate for the particular application. - Additional Embodiment Details
- The described techniques for may be embodied as a method, apparatus, computer program product or article of manufacture using standard programming and/or engineering techniques to produce software, firmware, hardware, or any combination thereof. The outputs of on-die circuitry which may include programmable processors, dedicated processors, comparators or adder/subtractor circuits, may be processed by on-die logic circuitry, firmware or software or processed by off chip logic circuitry, firmware or software, or a combination thereof, to process optically transmitted data. The term “article of manufacture” as used herein refers to code or logic embodied in hardware logic (e.g., an integrated circuit chip, Programmable Gate Array (PGA), Application Specific Integrated Circuit (ASIC), etc.) or a computer readable medium, such as magnetic storage medium (e.g., hard disk drives, floppy disks, tape, etc.), optical storage (CD-ROMs, optical disks, etc.), volatile and non-volatile memory devices (e.g., EEPROMs, ROMs, PROMs, RAMs, DRAMs, SRAMs, firmware, programmable logic, etc.).
- Code in the computer readable medium is accessed and executed by a processor. The “article of manufacture” or “computer program product” may comprise the medium in which the code is embodied. Additionally, the “article of manufacture” “computer program product” may comprise a combination of hardware and software components in which the code is embodied, processed, and executed. Of course, those skilled in the art will recognize that many modifications may be made to this configuration without departing from the scope of the present description, and that the article of manufacture may comprise any tangible information bearing medium known in the art.
- In certain applications, the photonic package embodiments may be embodied in a computer system including a video controller to render information to display on a monitor or other display coupled to the computer system, a device driver and a network controller, such as a computer system comprising a desktop, workstation, server, mainframe, laptop, handheld computer, etc. Alternatively, the photonic package embodiments may be embodied in a computing device that does not include, for example, a video controller, such as a switch, router, etc, or does not include a network controller, for example.
- The illustrated logic of
FIGS. 8, 9 a-9 e, 11, 12 a-12 d shows certain events occurring in a certain order. In alternative embodiments, certain operations may be performed in a different order, modified or removed. Moreover, operations may be added to the above described logic and still conform to the described embodiments. Further, operations described herein may occur sequentially or certain operations may be processed in parallel. Yet further, operations may be performed by a single processing unit or by distributed processing units. -
FIG. 13 illustrates one embodiment of acomputer architecture 900 of components, any one of which may include a photonic package in accordance with the present description. Thecomputer architecture 900 may comprise any computing device known in the art, such as a mainframe, server, personal computer, workstation, laptop, handheld computer, telephony device, network appliance, virtualization device, storage controller, etc. Thearchitecture 900 may include a processor 902 (e.g., a microprocessor), a memory 904 (e.g., a volatile memory device), and storage 906 (e.g., a non-volatile storage, such as magnetic disk drives, optical disk drives, a tape drive, etc.). Thestorage 906 may comprise an internal storage device or an attached or network accessible storage. Programs in thestorage 906 are loaded into thememory 904 and executed by theprocessor 902 in a manner known in the art. The architecture further includes a network controller oradapter 908 to enable communication with a network, such as an Ethernet, a Fibre Channel Arbitrated Loop, etc. Further, the architecture may, in certain embodiments, include avideo controller 909 to render information on a display monitor, where thevideo controller 909 may be embodied on a video card or integrated on integrated circuit components mounted on the motherboard. Aninput device 910 is used to provide user input to theprocessor 902, and may include a keyboard, mouse, pen-stylus, microphone, touch sensitive display screen, or any other activation or input mechanism known in the art. An output device 912 is capable of rendering information transmitted from theprocessor 902, or other component, such as a display monitor, printer, storage, etc. - The
network adapter 908 may embodied on a network card, such as a Peripheral Component Interconnect (PCI) card, PCI-express, or some other I/O card, or on integrated circuit components mounted on the motherboard. Thestorage 906 may comprise an internal storage device or an attached or network accessible storage. Programs in thestorage 906 are loaded into thememory 904 and executed by theprocessor 902. Any one or more of the devices of thecomputer architecture 900 may include one or more integrated circuits having an on-die conversion testing circuit as described herein. - The foregoing description of various embodiments has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit to the precise form disclosed. Many modifications and variations are possible in light of the above teaching.
Claims (21)
1. A method, comprising:
forming a photon emitter on the front side of a die; and
forming a beam path on the front side of the die and positioned to direct a beam of photons from the photon emitter on the front side of the die, through the semiconductor material of the body of the die, and to the backside of the die.
2. The method of claim 1 wherein the beam path forming includes forming a first mirror on the front side of the die and positioned to reflect a beam of photons from the photon emitter on the front side of the die, through the semiconductor material of the body of the die, and to the backside of the die.
3. The method of claim 1 wherein the photon emitter forming includes doping semiconductor regions on the front side of the die.
4. The method of claim 2 wherein the first mirror forming includes etching a beveled surface at the front side of the die and depositing photon reflective metal on the beveled surface.
5. The method of claim 1 wherein the photon emitter is a laser.
6. A method, comprising:
coupling an optical coupler to the backside of a first die having a photon emitter on the front side of the first die, and a beam path on the front side of the first die and positioned to direct a beam of photons from the photon emitter on the front side of the first die, and through the semiconductor material of the body of the first die, and to the backside of the first die;
wherein said coupling includes positioning the optical coupler to receive the beam of photons from the backside of the first die.
7. The method of claim 6 wherein the beam path of the first die includes a first mirror on the front side of the first die and positioned to reflect a beam of photons from the photon emitter on the front side of the first die, and through the material of the body of the first die, and to the backside of the first die.
8. The method of claim 7 wherein said coupling further comprises positioning a second mirror of the optical coupler to reflect the beam of photons from the backside of the first die.
9. The method of claim 6 further comprising thermally coupling a heat sink to the backside of the first die and positioned to draw heat energy generated by circuitry including the photon emitter on the front side of the first die.
10. The method of claim 9 further comprising positioning the optical coupler in a recess defined by a heat sink.
11. The method of claim 6 wherein said coupling further comprises attaching the optical coupler to the backside of the first die using an optically transmissive adhesive.
12. The method of claim 9 wherein said thermal coupling further comprises attaching the heat sink to the backside of the first die using a thermally transmissive adhesive.
13. The method of claim 8 wherein said coupling further comprises positioning a lens of the optical coupler to focus the beam of photons reflected by the second mirror.
14. The method of claim 13 further comprising coupling a photon beam conduit to the optical coupler so that the photon beam conduit is positioned to receive the beam of photons focused by the lens of the optical coupler.
15. The method of claim 6 further comprising electrically coupling a second die having a photon emitter driver circuit, to the front side of the first die, for driving the photo emitter of the first die.
16. The method of claim 15 comprising electrically coupling an interposer having a central aperture to a substrate.
17. The method of claim 16 further comprising electrically coupling the front side of the first die to the interposer with the second die disposed within the aperture of the interposer.
18. The method of claim 6 wherein said coupling further comprises positioning the optical coupler in a recess defined by a heat sink, attaching the heat sink to the backside of the first die using a thermally transmissive adhesive and attaching the optical coupler within the heat sink recess, to the backside of the first die using an optically transmissive adhesive.
19-37. (canceled)
38. A system, comprising:
a processor;
a memory coupled to the processor;
a video controller coupled to the memory and the processor; and
a package having a die of semiconductor material, said die having a photon emitter on the front side of the die, and a beam path on the front side of the die and positioned to direct a beam of photons from the photon emitter on the front side of the die, through the semiconductor material of the body of the die, and to the backside of the die.
39. The system of claim 40 wherein the beam path includes a first mirror on the front side of the die and positioned to reflect a beam of photons from the photon emitter on the front side of the die, through the semiconductor material of the body of the die, and to the backside of the die, the package further comprising an optical coupler positioned at the backside of the first die to receive the beam of photons from the backside of the first die; a heat sink thermally coupled to the backside of the die and positioned to draw heat energy generated by circuitry including the photon emitter on the front side of the first die wherein the heat sink defines a recess and the optical coupler is received in the heat sink recess; a layer of optically transmissive adhesive affixing the optical coupler to the backside of the die; a layer of thermally transmissive adhesive affixing the heat sink to the backside of the die; a second die having a photon emitter driver circuit, said second die being coupled to the front side of the die having the photon emitter, for driving the photon emitter; a substrate; and an interposer having a central aperture, said interposer coupled to the substrate, wherein the front side of the die having the photon emitter is coupled to the interposer with the second die disposed within the aperture of the interposer.
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Also Published As
Publication number | Publication date |
---|---|
US9570883B2 (en) | 2017-02-14 |
US20140029639A1 (en) | 2014-01-30 |
WO2013100995A1 (en) | 2013-07-04 |
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