TWI782140B - Laser module for optical data communication system within silicon interposer - Google Patents

Abstract

An interposer device includes a substrate that includes a laser source chip interface region, a silicon photonics chip interface region, an optical amplifier module interface region. A fiber-to-interposer connection region is formed within the substrate. A first group of optical conveyance structures is formed within the substrate to optically connect a laser source chip to a silicon photonics chip when the laser source chip and the silicon photonics chip are interfaced to the substrate. A second group of optical conveyance structures is formed within the substrate to optically connect the silicon photonics chip to an optical amplifier module when the silicon photonics chip and the optical amplifier module are interfaced to the substrate. A third group of optical conveyance structures is formed within the substrate to optically connect the optical amplifier module to the fiber-to-interposer connection region when the optical amplifier module is interfaced to the substrate.

Description

Laser module in silicon interposer for optical data communication system

The present invention relates to optical data communication.

Optical data communication systems operate by modulating laser light to encode a digital data pattern. The modulated laser light is transmitted from the sending node through the optical data network to the receiving node. The modulated laser light reaching the receiving node is demodulated to obtain the original digital data pattern. Therefore, the implementation and operation of optical data communication systems depend on reliable and efficient laser light sources and optical processing systems. Also, it is generally expected that the laser light source and light processing device of an optical data communication system can have minimal form factors and can be designed to be as efficient as possible in terms of cost and power consumption. It is against this background that the present invention was produced.

In an exemplary embodiment, an insert device is disclosed. The interposer device includes a substrate including a laser source chip interface region for receiving a laser source chip. The substrate also includes a silicon photonics chip interface region for receiving a silicon photonics chip. The substrate also includes an optical amplifier module interface area for receiving an optical amplifier module. A fiber-to-interposer connection area is formed in the substrate. The interposer device also includes a first set of light transmissive structures formed in the substrate to provide the laser source when the laser source chip and the silicon photonics chip interface with the substrate. A chip is optically connected to the silicon photonics chip. The interposer device also includes a second set of optical transmission junctions structure, the second group of optical transmission structures is formed in the substrate to optically connect the silicon photonic chip to the optical amplifier module when the silicon photonic chip and the optical amplifier module are at the interface with the substrate. The interposer device also includes a third set of optical transmission structures formed in the substrate to connect the optical amplifier module to the optical fiber when the optical amplifier module interfaces with the substrate to the insert connection area.

In an exemplary embodiment, a multi-chip module is disclosed. The multi-chip module includes an interposer device. The multi-chip module also includes a laser source chip connected to the interposer device. The multi-chip module also includes a silicon photonics chip connected to the interposer device. The multi-chip module also includes an optical amplifier module connected to the interposer device. The interposer device includes a first set of optical transmission structures for optically connecting the laser source chip to the silicon photonics chip. The interposer device also includes a second set of optical transmission structures for optically connecting the silicon photonics chip to the optical amplifier module. The interposer device also includes a third set of optical transmission structures for optically connecting the optical amplifier module to a fiber-to-interposer connection area formed in the interposer device.

In an exemplary embodiment, a mechanical transmission ferrule is disclosed. The mechanical transmission ferrule includes an upper half that includes an upper alignment key. The mechanical transmission ferrule also includes a lower half that includes an alignment key. The upper alignment key and the lower alignment key are adapted to fit together to provide alignment and fit between the upper half and the lower half. Each of the upper half and the lower half is adapted to receive an outer edge of an insert device between the upper half and the lower half, so that when the upper half is suitable When mated to the lower half-member, a light guide exposed at an edge of the outer edge portion of the interposer device is exposed at a location between the upper half-member and the lower half-member.

In an exemplary embodiment, a method for manufacturing a multi-chip module is disclosed. The method includes providing an insert device. The method also includes attaching a laser source chip to the interposer device. The method also includes connecting a silicon photonics chip to the interposer device. The method also involves amplifying a light Connector module to the inserter device. The interposer device includes a first set of optical transmission structures optically connecting the laser source chip to the silicon photonics chip. The interposer device also includes a second set of optical transmission structures optically connecting the silicon photonics chip to the optical amplifier module. The interposer device also includes a third set of optical transmission structures optically connecting the optical amplifier module to a fiber-to-interposer connection region formed within the interposer device.

100A:Laser module

100B:Laser module

100C:Laser module

100D:Laser module

100E:Laser module

100F:Laser module

102: Laser source

102A: Laser source

103-1 to 103-N: Laser

104-1 to 104-N: optical output interface

105: light guide

107:Optical arrangement module

107A: Optical arrangement module

107B: Optical arrangement module

107C: Optical arrangement module

106-1 to 106-N: Wire

108-1 to 108-N: optical input interface

109-1 to 109-M: optical output interface

110: Substrate

111: Component

200:PLC

201-1 to 201-N: Laser Beam

301: light guide

303-1 to 303-N: optical amplifier module

303: Optical amplifier module

303A: optical amplifier module

304-1 to 304-M: optical input interface

305-1 to 305-M: optical amplifiers

306-1 to 306-M: optical output interface

307: Component

401: Component

501-1 to 501-M: Line

503:PLC

601:PLC

701: wavelength combiner

703: light guide

705: Broadband Power Splitter

801: Arrayed waveguide

803: light guide

805: Broadband Power Splitter

901: Ladder grating

903: light guide

905: Broadband Power Splitter

1001: Butterfly waveguide network

1021: Substrate

1022: epitaxial layer

1023: epitaxial layer

1024: epitaxial layer

1025: planarization layer

1026: Conductive interconnection structure

1027: part

1101: star coupler

1201: resonant ring array

1203: Resonant ring

1701: Operation

1703: Operation

1705: Operation

1801: Insert device

1801A: Insert Device

1801B: Insert device

1801C: Insert device

1803: Silicon photonics die/chip

1805A to 1805D: die/wafer

1901: Polarization Rotator

1903: Fiber-to-insert connectors

1905: Light guide structure

1907: Light guide structure

1909-1 to 1909-N: light guide structures

1911: Light guide

1913: Light guide

1915-1 to 1915-N: Light guides

2100: Cavities/Depressions

2101: light guide

2103: Side protrusions

2103A: side protrusions

2103B: Side protrusions

2201: grain/wafer

2301: upper part

2303: the lower half

2305: Alignment key

2307: Partial hole

2309: partial hole

2311: pull ear (tab)

2313: light guide

2601: Insert device

2701: Operation

2703: Operation

2705: Operation

2707: Operation

AMWL-1 to AMWL-M: Multi-wavelength laser output

MWL-1 to MWL-M: Multi-wavelength laser output

R ₁ to R _N : Resonant Ring Column

FIG. 1A shows a structural diagram of a laser module according to some embodiments of the present invention.

FIG. 1B shows a side view of the laser module of FIG. 1A according to some embodiments of the present invention.

1C shows a side view of the laser module of FIG. 1A without the light guide, according to some embodiments of the present invention.

1D shows a side view of the laser module structure of FIG. 1C according to some embodiments of the present invention, wherein the empty space between the laser source and the light editing module is covered and/or sealed by a member.

1E shows a side view of the laser module of FIG. 1A in which light guides are absent and the laser source and light programming module are arranged in side-by-side contact, according to some embodiments of the present invention.

FIG. 1F shows a side view of the laser module of FIG. 1A in which light guides are absent and the laser source and light programming module are arranged in vertical overlapping contact, according to some embodiments of the present invention.

1G shows a side view of the laser module structure of FIG. 1F according to some embodiments of the present invention, wherein the optical programming module is extended across the laser source so that the optical programming module is the laser source in the laser mode. The settings within the group provide physical support.

FIG. 2A shows a structural diagram of a laser module according to some embodiments of the present invention.

Figure 2B shows a side view of a PLC according to some embodiments of the invention.

FIG. 3A shows a structural diagram of a laser module according to some embodiments of the present invention. The laser module includes a laser source, an optical editing module and an optical amplification module.

Figure 3B shows a side view of the laser module of Figure 3A with light guide 105 present and light guide 301 present, according to some embodiments of the present invention.

Figure 3C shows a side view of the laser module of Figure 3A with light guide 105 present and light guide 301 absent, according to some embodiments of the present invention.

3D shows a side view of the laser module structure of FIG. 3C according to some embodiments of the present invention, wherein the empty space between the optical editing module and the optical amplification module is covered and/or sealed by a member.

3E shows a side view of the laser module of FIG. 3A with light guide 105 present and light guide 301 absent and the optical programming module and optical amplification module arranged in side-by-side contact, according to some embodiments of the present invention.

3F shows a side view of the laser module of FIG. 3A in accordance with some embodiments of the present invention, wherein the light guide is not present and the optical programming module and the optical amplification module are arranged in vertical overlapping contact.

3G shows a side view of the laser module structure of FIG. 3F according to some embodiments of the present invention, wherein the optical amplification module extends across the optical programming module, light guide and electric radiation source so that the optical amplification module is The placement of each of the light programming module, light guide, and laser source within the laser module provides physical support.

Figure 3H shows a side view of a modification of the laser module structure of Figure 3B in which the light guide is not present, according to some embodiments of the present invention.

Figure 3I shows a side view of a modification of the laser module structure of Figure 3C in which the light guide is not present, according to some embodiments of the present invention.

Figure 3J shows a side view of a modification of the laser module structure of Figure 3E in which the light guide is not present, according to some embodiments of the present invention.

Figure 3K shows a side view of a modification of the laser module structure of Figure 3F in which the light guide is not present, according to some embodiments of the present invention.

Figure 3L shows a side view of a modification of the laser module structure of Figure 3G in which the light guide is not present, according to some embodiments of the present invention.

Figure 3M shows a side view of a modification of the laser module structure of Figure 3B in which the laser source and optical programming module are arranged in side-by-side contact, according to some embodiments of the present invention.

3N shows a side view of a modification of the laser module structure of FIG. 3C in which the laser source and optical programming module are arranged in side-by-side contact, according to some embodiments of the present invention.

3O shows a side view of a modification of the laser module structure of FIG. 3E in which the laser source and optical programming module are arranged in side-by-side contact, according to some embodiments of the present invention.

3P shows a side view of a modification of the laser module structure of FIG. 3F in which the laser source and optical programming module are arranged in side-by-side contact, according to some embodiments of the present invention.

3Q shows a side view of a modification of the laser module structure of FIG. 3G in which the laser source and optical programming module are arranged in side-by-side contact, according to some embodiments of the present invention.

3R shows a side view of a modification of the laser module structure of FIG. 3B in which the laser source and optical programming module are arranged in vertical overlapping contact, according to some embodiments of the present invention.

Figure 3S shows a side view of a modification of the laser module structure of Figure 3R in which the light editing module extends across the laser source, light guide, and light amplification module, according to some embodiments of the present invention.

Figure 3T shows a side view of a modification of the laser module structure of Figure 3R in which the light guide is not present, according to some embodiments of the present invention.

Figure 3U shows a side view of a modification of the laser module structure of Figure 3S in which the light guide is not present, according to some embodiments of the present invention.

3V shows a side view of a modification of the laser module structure of FIG. 3T in which light guides are absent and the optical programming module and optical amplification module are arranged in side-by-side contact, according to some embodiments of the present invention.

Figure 3W shows a side view of a modification of the laser module structure of Figure 3S in which light guides are absent and the optical programming module and optical amplification module are arranged in side-by-side contact, according to some embodiments of the present invention.

Figure 3X shows a side view of a modification of the laser module structure of Figure 3R in which light guides are absent and the optical programming module and optical amplification module are arranged in vertical overlapping contact, according to some embodiments of the present invention.

Figure 3Y shows a side view of a modification of the laser module structure of Figure 3X in accordance with some embodiments of the present invention, wherein the optical programming module is extended across the laser source and the optical amplification module so that the optical editing module is The arrangement of each of the laser source and the optical amplification module within the laser module provides physical support.

FIG. 4A shows a structural diagram of a laser module according to some embodiments of the present invention.

FIG. 4B shows a side view of the laser module structure of FIG. 4A according to some embodiments of the present invention.

4C shows a side view of the laser module of FIG. 4B without the light guide, according to some embodiments of the present invention.

4D shows a side view of the laser module structure of FIG. 4C according to some embodiments of the present invention, wherein the empty space between the PLC and the optical amplification module is covered and/or sealed by a member.

4E shows a side view of the laser module of FIG. 4A in which the light guide is absent and the PLC and optical amplification module are arranged in side-by-side contact, according to some embodiments of the present invention.

FIG. 5A shows a structural diagram of a laser module according to some embodiments of the present invention, wherein the optical editing module and the optical amplification module are implemented together in the same PLC.

FIG. 5B shows a side view of the laser module structure of FIG. 5A according to some embodiments of the present invention.

5C shows a side view of the laser module structure of FIG. 5B without the light guide, according to some embodiments of the present invention.

5D shows a side view of the laser module structure of FIG. 5C according to some embodiments of the present invention, wherein the empty space between the laser source and the PLC is covered and/or sealed by a member.

Figure 5E shows a side view of the laser module of Figure 5A, in which the light guide is absent and the laser source and PLC are arranged in side-by-side contact, according to some embodiments of the present invention.

FIG. 6A shows a block diagram of a laser module according to some embodiments of the present invention, wherein the laser source, light editing module and amplification module are implemented together in the same PLC.

6B shows a side view of the laser module structure of FIG. 6A according to some embodiments of the present invention.

FIG. 7 shows an exemplary embodiment of an optical programming module including Nx1 (polarization maintaining) wavelength combiners and IxM (polarization maintaining) broadband power splitters according to some embodiments of the present invention.

FIG. 8 shows an exemplary embodiment of an optical programming module including arrayed waveguides and broadband power splitters according to some embodiments of the present invention.

Figure 9 shows an exemplary embodiment of an optical programming module including an echelle grating and a broadband power divider according to some embodiments of the present invention.

Figure 10 shows an exemplary embodiment of an optical programming module including a butterfly waveguide network in accordance with some embodiments of the present invention.

Figure 11 shows an exemplary embodiment of a light orchestration module including star couplers according to some embodiments of the present invention.

Figure 12A shows an exemplary embodiment of a light orchestration module comprising an array of resonant rings according to some embodiments of the present invention.

Figure 12B shows a detailed diagram of a resonant ring array according to the present invention.

FIG. 13 shows an exemplary embodiment of the laser module of FIG. 6A on a PLC in accordance with some embodiments of the present invention, where the programming module is applied to include an arrayed waveguide and broadband power splitter.

FIG. 14 shows an exemplary embodiment of the laser module of FIG. 6A on a PLC in accordance with certain embodiments of the present invention, where the programming module is applied to include an echelle grating and a broadband power divider.

FIG. 15 shows an exemplary embodiment of the laser module of FIG. 6A on a PLC applying an orchestration module to include a butterfly waveguide network in accordance with certain embodiments of the present invention.

FIG. 16 shows an exemplary embodiment of the laser module of FIG. 6A on a PLC in accordance with certain embodiments of the present invention, where the programming module is applied to include a star coupler.

FIG. 17 shows a flowchart of a laser module operating method according to some embodiments of the present invention.

Figure 18A shows an exemplary interposer device in which the functions of substrate and waveguide are combined, according to some embodiments of the present invention.

Figure 18B shows a top view of an interposer device according to some embodiments of the present invention to illustrate the flexibility of disposing the die/wafer relative to the interposer device.

Figure 19 shows a plan block diagram of an interposer device as part of an MCM integrated product according to some embodiments of the present invention.

Figure 20A shows a vertical cross-sectional block diagram of an interposer device as part of an MCM integrated product, according to some embodiments of the present invention.

Figure 20B shows another vertical cross-sectional block diagram of an interposer device as part of an MCM integrated product according to some embodiments of the present invention.

Figure 20C shows another vertical cross-sectional block diagram of an interposer device as part of an MCM integrated product, according to some embodiments of the present invention.

Figure 21 shows an isometric view of the upper surface of an exemplary interposer device according to some embodiments of the present invention.

FIG. 22 shows the exemplary interposer device of FIG. 21 with a die/wafer disposed within a cavity/recess according to certain exemplary embodiments of the invention.

23A-23F show an integral MT ferrule for connection to an inserter device, according to some embodiments of the present invention.

Figure 24 shows an exemplary vertical cross-section through a laser source according to some embodiments of the present invention.

25 shows a vertical cross-sectional view of FIG. 24 after etching the planarization layer to reveal part of the epitaxial layer (third photonic layer), according to some embodiments of the present invention.

Figure 26 shows a vertical cross-sectional view of the laser source of Figure 25 in a flip-chip attached to interposer device according to some embodiments of the present invention.

FIG. 27 shows a flowchart of a multi-chip module (MCM) manufacturing method according to some embodiments of the present invention.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the invention. It will be understood, however, that one skilled in the art of the invention may practice the invention without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.

Various embodiments of laser modules and related methods are disclosed herein. Design and configure the laser module to supply laser light with one or more wavelengths. It should be understood that the term "wavelength" as used herein refers to the wavelength of electromagnetic radiation. Also, the term "light" as used herein refers to electromagnetic radiation falling within a portion of the electromagnetic spectrum usable by optical data communication systems. In some embodiments, a portion of the electromagnetic spectrum includes Light having wavelengths in the range extending from about 1100 nanometers to about 1565 nanometers (covering the O-band to the C-band of the electromagnetic spectrum, inclusive). It should be understood, however, that a portion of the electromagnetic spectrum referred to herein may include light having wavelengths less than 1100 nm or greater than 1565 nm, so long as an optical data communication system that encodes, transmits, and decodes digital data via modulation/demodulation of light is capable of Use this type of light. In some embodiments, the light used in the optical data communication system has wavelengths in the near-infrared red portion of the electromagnetic spectrum. Also, the term "laser beam" as used herein refers to a beam of light generated by a laser device. It will be appreciated that the laser beam can be confined to propagate in a light guide such as, but not limited to, a light guide within a fiber optic planar lightwave circuit (PLC). In some embodiments, the laser beam is polarized. Also, in some embodiments, the light of a particular laser beam has a single wavelength, where a single wavelength may refer to substantially one wavelength or may refer to a narrow frequency band that an optical data communication system can recognize and process as if it were a single wave wavelength.

FIG. 1A shows a block diagram of a laser module 100A according to some embodiments of the present invention. The laser module 100A includes a laser source 102 and an optical editing module 107 . The laser source 102 is used to generate and output a plurality of laser beams, ie, (N) laser beams. The plurality of laser beams have different wavelengths (λ1-λN) from each other, wherein the different wavelengths (λ1-λN) are distinguishable for an optical data communication system. In some embodiments, the laser source 102 includes a plurality of lasers 103-1 to 103-N for respectively generating a plurality (N) of laser beams, wherein each of the lasers 103-1 to 103-N Generate and output laser beams corresponding to one of the different wavelengths (λ1-λN) respectively. Each of the laser beams generated by the plurality of lasers 103 - 1 to 103 -N is provided to the respective light output interfaces 104 - 1 to 104 -N of the laser source 102 for transmission from the laser source 102 . In some embodiments, each of the plurality of lasers 103-1 to 103-N is a distributed feedback laser for generating laser light at a specific one of different wavelengths (λ1-λN). In some embodiments, laser source 102 may be defined as a separate component such as a separate wafer. However, in other embodiments, the laser source 102 may be integrated in a planar lightwave circuit (PLC) on a chip that includes other components in addition to the laser source 102 .

In the exemplary embodiment of FIG. 1A, laser source 102 is defined as a discrete component attached to a substrate 110, such as an electronic packaging substrate. In various embodiments, the substrate 110 can be an organic substrate or a ceramic substrate, or a basic structure on which electronic devices and/or optoelectronic devices and/or light guides and/or optical fibers (plural optical fibers)/fiber optic ribbons (plural optical fiber ribbons) can be mounted. Any other type of substrate. For example, in some embodiments, the substrate 110 may be an indium (III-V) phosphide substrate. Or in another example, the substrate 110 may have an Al ₂ O ₃ structure. It should be appreciated that in various embodiments, laser source 102 may be attached/mounted to substrate 110 using substantially any known electronic packaging process, such as flip-chip bonding, which may optionally be included between laser source 102 and A ball grid array (BGA), bumps, solder, underfill, and/or other component(s) are disposed between substrates 110 and include bonding techniques such as mass reflow, thermocompression bonding (TCB), or substantially any other suitable bonding technique. In various embodiments, the substrate 110 may be silicon, a silicon interposer device, glass, or other suitable substrates.

The optical editing module 107 is used to receive a plurality of laser beams with different wavelengths (λ1-λN) from the laser source 102 at the plurality of corresponding optical input interfaces 108-1 to 108-N of the optical editing module 107. The optical editing module 107 is also used to distribute a portion of each of the plurality of laser beams to each of the plurality of optical output interfaces 109-1 to 109-M of the optical editing module 107, wherein (M) is the number of optical output interfaces of the optical programming module 107 . The optical programming module 107 operates to distribute the plurality of laser beams so that all the different wavelengths (λ1-λN) of the plurality of laser beams are provided to the plurality of optical output interfaces 109-1 to 109-M of the optical programming module 107 each. It should therefore be appreciated that, as shown in FIG. 1A , the optical programming module 107 operates to provide light of a plurality of laser beams having different wavelengths (λ1-λN) to the optical output interfaces 109-1 to 109 of the optical programming module 107 Each of -M. In this way, for the laser module 100A, each of the optical output interfaces 109-1 to 109-M of the optical programming module 107 provides one of the complex multi-wavelength laser outputs MWL-1 to MWL-M One counterpart.

In some embodiments, the optical arrangement module 107 is used to maintain the plurality of optical input interfaces 108-1 to 108-N of the optical arrangement module 107 and the plurality of optical output interfaces 109-1 to 108-N of the optical arrangement module 107 Polarization of each of the plurality of laser beams between 109-M. Also, in some embodiments, the optical arrangement module 107 is configured such that each of the plurality of optical output interfaces 109-1 to 109-M of the optical arrangement module 107 receives any specific beam in the plurality of laser beams A similar amount of optical power within five times. In other words, in some embodiments, the optical programming module 107 provides light of a specific wavelength (that is, one of different wavelengths (λ1-λN)) to a specific interface among the optical output interfaces 109-1 to 109-M The amount of is equal to the amount of light of a specific wavelength provided by the optical editing module 107 to other interfaces among the optical output interfaces 109-1 to 109-M within five times. It should be understood that the above five times is an exemplary embodiment. In other embodiments, the above five times may be changed to two times, three times, four times or six times, etc. or any other value between or less than or greater than. It should be understood that the optical editing module 107 can be used to control the amount of light of a specific wavelength provided by each of the optical output interfaces 109-1 to 109-M of the optical editing module 107, and thus can be used to control the optical output of the optical editing module 107. The uniformity of the amount of light of a specific wavelength provided by each of the optical output interfaces 109-1 to 109-M.

In the exemplary embodiment of FIG. 1A , light orchestration module 107 is defined as a separate component attached to substrate 110 . It should therefore be understood that in the exemplary embodiment of the laser module 100A, the laser source 102 and the light editing module 107 are physically separate components. It should be appreciated that, in various embodiments, optical programming module 107 may be attached/mounted to substrate 110 using substantially any known electronic packaging process. Also, in some embodiments, optical programming module 107 is configured as a non-electronic component such as a passive component and may utilize techniques that do not involve establishing electrical contact between optical programming module 107 and substrate 110, such as utilizing epoxy or other type of adhesive material is attached/mounted to the substrate 110 . In some embodiments, the optical programming module 107 may be integrated into a PLC on a chip including other components in addition to the optical programming module 107, rather than being defined as a separate component. In some embodiments, both the light programming module 107 and the laser source 102 may be implemented in the same PLC.

The laser source 102 is aligned with the optical arrangement module 107 to guide the complex laser beams transmitted from the optical outputs 104-1 to 104-N of the laser source 102 to enter the optical input interface 108-1 of the optical arrangement module 107 respectively To the counterpart of 108-N. In some embodiments, optical programming module 107 is separate from laser source 102 Leave. In some embodiments, the light editing module 107 is in contact with the laser source 102 . Also, in some embodiments, a portion of the light editing module 107 overlaps a portion of the laser source 102 in position. In the exemplary embodiment of laser module 100A shown in FIG. 1A , light editing module 107 is separate from laser source 102 and light guide 105 is located between laser source 102 and light editing module 107 . The light guide 105 is used to guide the plurality of laser beams from the laser source 102 to the corresponding ones of the plurality of optical input interfaces 108-1 to 108-N of the optical editing module 107, as shown by the lines 106-1 to 106-N .

In various embodiments, the light guide 105 may be formed of virtually any material so long as light energy is transmitted through the material from the entry location on the light guide 105 to the exit location of the light guide 105 . For example, in various embodiments, the light guide 105 may be formed of glass, SiN, SiO ₂ , germanium oxide, and/or silicon dioxide, among others. In some embodiments, the light guide 105 is used to maintain the polarization of the plurality of laser beams between the laser source 102 and the light editing module 107 . In some embodiments, the light guide 105 includes (N) optical transmission channels, wherein each optical transmission channel extends from a corresponding one of the optical output interfaces 104-1 to 104-N of the laser source 102 to the optical programming mode A corresponding one of the optical input interfaces 108-1 to 108-N of the group 107. In some embodiments, each of the (N) optical transmission channels of the light guide 105 has a substantially rectangular cross-section in a plane perpendicular to the direction of propagation of the laser beam (i.e., perpendicular to the x-direction as shown in FIG. 1A ). , whose function is to maintain the polarization of the laser beam when the laser source 102 propagates to the optical programming module 107 .

In the exemplary embodiment of FIG. 1A , light guide 105 is defined as a separate element attached to substrate 110 . It should therefore be appreciated that in the exemplary embodiment of laser module 100A, laser source 102, light guide 105, and light editing module 107 are physically separate components. It should be appreciated that in various embodiments, the light guide 105 may be attached/mounted to the substrate 110 using substantially any known electronic packaging process. Also, in some embodiments, the light guide 105 is configured as a non-electronic component, such as a passive component, and can be attached using techniques that do not involve establishing electrical contact between the light guide 105 and the substrate 110, such as using epoxy or other types of adhesive materials. / mounted to the substrate 110 . In some embodiments, the light guide 105 may be integrated into other components in addition to the light guide 105 The device is within the PLC on the die and is not defined as a separate device. In some embodiments, laser source 102, light guide 105, and light editing module 107 may be implemented in the same PLC.

In some embodiments, the laser module 100A includes a heat dissipating element disposed adjacent to the laser source 102 . The heat spreading element is used to spread the thermal output of the plurality of lasers 103-1 to 103-N to provide substantial uniformity of temperature-dependent wavelength shift among the plurality of lasers 103-1 to 103-N. In some embodiments, a heat spreading element is included within the laser source 102 . In some embodiments, heat spreading elements are included in the substrate 110 . In some embodiments, the heat spreading element is formed separately from each of the laser source 102 , the light editing module 107 and the substrate 110 . In some embodiments, the heat spreading element is included in the light programming module 107 and the heat spreading element portion of the light programming module 107 physically overlaps the laser source 102 . In some embodiments, the heat spreading element is included within the light guide 105 and the heat spreading element portion of the light guide 105 physically overlaps the laser source 102 . In various embodiments, the heat spreading element is formed of a thermally conductive material, such as a metallic material. In some embodiments, the heat dissipating element may include an element such as a thermoelectric cooling element to actively transfer heat away from the plurality of lasers 103-1 through 103-N. Also, in some embodiments, the heat spreading element is formed with sufficient mass to function as a heat sink for dissipating heat from the plurality of lasers 103 - 1 to 103 -N of the laser source 102 .

Figure IB shows a side view of a laser module 100A in which a light guide 105 is present, according to some embodiments of the present invention. In the embodiment of FIG. 1B, the laser source 102 and the optical editing module 107 are arranged on the substrate 110 in a substantially coplanar manner so that the optical output interfaces 104-1 to 104-N of the laser source 102 are respectively Horizontally aligned with the optical input interfaces 108-1 to 108-N of the optical arrangement module 107, so as to be at the optical output interfaces 104-1 to 104-N of the laser source 102 or at the optical input of the optical arrangement module 107 There is no need to rotate the laser beam at interfaces 108-1 to 108-N.

FIG. 1C shows a side view of laser module 100A without light guide 105 in accordance with some embodiments of the present invention. In the embodiment of FIG. 1C, the laser source 102 and the optical editing module 107 are arranged on the substrate 110 in a substantially coplanar manner so that the light output interface 104-1 of the laser source 102 can reach the 104-N is respectively horizontally aligned with the optical input interfaces 108-1 to 108-N of the optical arrangement module 107, so that at the optical output interfaces 104-1 to 104-N of the laser source 102 or at the optical arrangement module There is no need to rotate the laser beams at the optical input interfaces 108-1 to 108-N of the group 107. In the embodiment of FIG. 1C , empty spaces exist between the light output interfaces 104 - 1 to 104 -N of the laser source 102 and the light input interfaces 108 - 1 to 108 -N of the light editing module 107 . Therefore, in the embodiment of FIG. 1C , the laser beams output from the laser source 102 travel through respective linear paths through the empty space between the laser source 102 and the light editing module 107 .

FIG. 1D shows a side view of the structure of the laser module 100A of FIG. 1C according to some embodiments of the present invention, wherein the empty space between the laser source 102 and the optical editing module 107 is covered by a member 111 and/or or sealed. In various embodiments, component 111 may be another chip provided during packaging, or another material provided during packaging, or may be an integral part of laser source 102, or may be an integral part of optical programming module 107. an integrated component.

1E shows a side view of laser module 100A in which light guide 105 is absent and laser source 102 and light programming module 107 are arranged in side-by-side contact, according to some embodiments of the present invention. In the structure of the exemplary laser module 100A of FIG. 1E , the laser source 102 and the light editing module 107 are arranged on the substrate 110 in a substantially coplanar manner, so that the light output interface 104 of the laser source 102 -1 to 104-N are horizontally aligned with the optical input interfaces 108-1 to 108-N of the optical arrangement module 107, so that the optical output interfaces 104-1 to 104-N of the laser source 102 or at The optical input interfaces 108 - 1 to 108 -N of the optical editing module 107 do not need to rotate the laser beams.

FIG. 1F shows a side view of laser module 100A according to some embodiments of the present invention, wherein light guide 105 is absent and laser source 102 and optical programming module 107 are arranged in vertical overlapping contact. In the structure of the exemplary laser module 100A of FIG. 1F , the substrate 110 is used to support both the laser source 102 and the light editing module 107 . In the structure of the exemplary laser module 100A of FIG. 1F, the optical output interfaces 104-1 to 104-N of the laser source 102 are respectively perpendicular to the optical input interfaces 108-1 to 108-N of the optical arrangement module 107. Align, so that at the light output interface 104-1 to 104-N of the laser source 102 and at the light arrangement The rotation of the laser beam is completed at the optical input interfaces 108 - 1 to 108 -N of the module 107 . 1G shows a side view of the structure of the laser module 100A of FIG. 1F according to some embodiments of the present invention, wherein the light editing module 107 is extended across the laser source 102 so that the light editing module 107 is a laser The placement of source 102 within laser module 100A provides physical support. In the structure of the exemplary laser module 100A of FIG. 1G , the substrate 110 may be omitted if the optical programming module 107 is formed with sufficient mechanical strength to physically support itself and the laser source 102 .

FIG. 2A shows a structural diagram of a laser module 100B according to some embodiments of the present invention. Laser module 100B includes laser source 102A and light scheduling module 107A implemented within a same PLC 200 . The function of the laser source 102A is basically the same as that of the laser source 102 described above for the laser module 100A. The function of the optical programming module 107A is basically the same as that of the optical programming module 107 described above for the laser module 100A. Figure 2B shows a side view of PLC 200 according to some embodiments of the invention. In the PLC 200, the laser source 102A and the light editing module 107A are implemented in an integrated manner so that the laser beams 201-1 to 201- N guides the laser beams 201 - 1 to 201 -N into the optical editing module 107A through the optical output interface and the optical input interface respectively. Also, in PLC 200, a separate light guide 105 is not required due to the optical integration between laser source 102A and light editing module 107A.

In some embodiments, the laser source 102 generates a complex number of laser beams with sufficient power at different wavelengths (λ1-λN) such that the multi-wavelength laser outputs MWL-1 to MWL-M are output from the optical programming module 107/ The 107A output has sufficient power for use in optical data communications. However, in some embodiments, due to limitations in the output power of laser source 102 and/or due to optical losses in light guide 105 and/or optical programming module 107, the multi-wavelength laser output from optical programming module 107/107A Outputs MWL-1 to MWL-M do not have sufficient power for use in optical data communications. Therefore, in some embodiments, the multi-wavelength laser outputs MWL- 1 to MWL-M output from the optical programming module 107 / 107A need to be optically amplified before being used for optical data communication. Each of the multi-wavelength laser outputs MWL-1 through MWL-M may be optically amplified using an optical amplifier. In various embodiments, the optical amplifier may be implemented directly within the laser module.

FIG. 3A shows a structural diagram of a laser module 100C according to some embodiments of the present invention. The laser module 100C includes a laser source 102 , an optical editing module 107 and an optical amplification module 303 . The configuration of the laser source 102 is basically the same as that described above for the laser module 100A. Also, the configuration of the optical editing module 107 is basically the same as that described above for the laser module 100A. Also, in some embodiments, the laser module 100C may include a light guide 105 located between the laser source 102 and the light editing module 107, wherein the arrangement of the light guide 105 is the same as that described above for the laser module 100A in the same way.

The optical amplification module 303 is used to receive the plurality of corresponding optical output interfaces 109-1 to 109-M from the optical arrangement module 107 at the plural corresponding optical input interfaces 304-1 to 304-M of the optical amplifier module 303. Multi-wavelength laser outputs MWL-1 to MWL-M. The optical amplification module 303 includes a plurality of optical amplifiers 305-1 to 305-M respectively for amplifying the complex multi-wavelength laser output MWL-1 received at the plurality of optical input interfaces 304-1 to 304-M of the optical amplification module 303 to MWL-M. In various embodiments, the plurality of optical amplifiers 305-1 to 305-M can be defined as one or more semiconductor optical amplifiers, erbium/ytterbium-doped fiber amplifiers, Raman amplifiers, among others. The optical amplifiers 305-1 to 305-M are configured and optically connected to provide multiple multi-wavelength laser outputs AMWL-1 to AMWL-M respectively to the multiple optical output interfaces 306-1 to 306-M of the optical amplification module 303. Enlarged version. In this way, for the laser module 100C, each of the optical output interfaces 306-1 to 306-M of the optical amplification module 303 provides a plurality of amplified multi-wavelength laser outputs AMWL-1 to AMWL- A one-to-one counterpart in M. In some embodiments, the optical amplification module 303 is used to maintain the plurality of optical input interfaces 304-1 to 304-M of the optical amplification module 303 and the plurality of optical output interfaces 306-1 to 306-M of the optical amplification module 303 The polarization of each of the plurality of laser beams between M.

In the exemplary embodiment of FIG. 3A , optical amplification module 303 is defined as a separate component attached to substrate 110 . It should therefore be appreciated that in the exemplary embodiment of the laser module 100C, the laser source 102 , the optical editing module 107 and the optical amplification module 303 are physically separated components. It should be appreciated that in various embodiments, optical amplifier module 303 may be attached/mounted to substrate 110 using substantially any known electronic packaging process, such as flip-chip bonding, which may optionally be included in the optical amplifier module. Ball grid array (BGA), bumps, solder, underfill, and/or other component(s) are disposed between 303 and substrate 110 and include bonding techniques such as mass reflow, thermocompression bonding (TCB), or virtually any other Appropriate bonding technique.

The optical programming module 107 is aligned with the optical amplification module 303 to direct the multi-wavelength laser outputs MWL- 1 to MWL-M into corresponding ones of the optical input interfaces 304 - 1 to 304 -M of the optical amplification module 303 . In some embodiments, the optical amplification module 303 is separate from the optical editing module 107 . In some embodiments, the optical amplification module 303 is in contact with the optical editing module 107 . Also, in some embodiments, a portion of the optical amplification module 303 overlaps with a portion of the optical editing module 107 and/or a portion of the laser source 102 . In an exemplary embodiment of the laser module 100C, as shown in FIG. 3A , the optical amplification module 303 is located separately from the optical editing module 107 and the light guide 301 is located between the optical editing module 107 and the optical amplification module. Between 303. The light guide 301 is used to guide the plurality of multi-wavelength laser outputs MWL-1 to MWL-M from the optical arrangement module 107 to corresponding ones of the plurality of optical input interfaces 304-1 to 304-M of the optical amplification module 303 .

In various embodiments, the light guide 301 may be formed of virtually any material as long as light energy is transmitted through the material from the entry location on the light guide 301 to the exit location of the light guide 301 . For example, in various embodiments, the light guide 301 may be formed of glass, SiN, SiO ₂ , germanium oxide, and/or silicon dioxide, among others. In some embodiments, the light guide 301 is used to maintain the polarization of the plurality of multi-wavelength laser outputs MWL- 1 to MWL-M between the optical editing module 107 and the optical amplification module 303 . In some embodiments, the light guide 301 includes (M) optical transmission channels, wherein each optical transmission channel extends from a corresponding one of the optical output interfaces 109-1 to 109-M of the optical programming module 107 to the optical amplifier A corresponding one of the optical input interfaces 304-1 to 304-M of the module 303. In some embodiments, each of the (M) optical transmission channels of light guide 301 has a substantially rectangular shape on a plane perpendicular to the direction of propagation of the multi-wavelength laser output (ie, perpendicular to the x-direction as shown in FIG. 3A ). The function is to maintain the polarization of the multi-wavelength laser output when the multi-wavelength laser output propagates from the optical programming module 107 to the optical amplification module 303 .

In the exemplary embodiment of FIG. 3A , light guide 301 is defined as a separate component attached to substrate 110 . It should therefore be understood that in the exemplary embodiment of the laser module 100C, the laser source 102 , the light guide 105 , the light editing module 107 , the light guide 301 and the optical amplification module 303 are physically separate components. It should be appreciated that in various embodiments, light guide 301 may be attached/mounted to substrate 110 using substantially any known electronic packaging process. Also, in some embodiments, the light guide 301 is configured as a non-electronic component such as a passive component and may be attached using techniques that do not involve establishing electrical contact between the light guide 301 and the substrate 110, such as using epoxy or other types of adhesive materials. / mounted to the substrate 110 . In some embodiments, the light guide 301 may be integrated into a PLC on a chip including other components in addition to the light guide 301, rather than being defined as a separate component. In some embodiments, two or more of the laser source 102, the light guide 105, the light editing module 107, the light guide 301, and the light amplification module 303 may be implemented in the same PLC.

3B shows a side view of laser module 100C in which light guide 105 is present and light guide 301 is present, according to some embodiments of the present invention. In the embodiment of FIG. 3B, the laser source 102, the optical editing module 107 and the optical amplification module 303 are arranged on the substrate 110 in a substantially coplanar manner, so that the optical output interface 104- 1 to 104-N are respectively horizontally aligned with the optical input interfaces 108-1 to 108-N of the optical programming module 107, so that the optical output interfaces 109-1 to 109-M of the optical programming module 107 are respectively connected to the optical amplifier The optical input interfaces 304-1 to 304-M of the module 303 are aligned horizontally. In this way, in the exemplary embodiment of FIG. 3B, at the optical output interfaces 104-1 to 104-N of the laser source 102 or at the optical input interfaces 108-1 to 108-N of the optical editing module 107 Either at the optical output interfaces 109 - 1 to 109 -M of the optical editing module 107 or at the optical input interfaces 304 - 1 to 304 -M of the optical amplification module 303 , there is no need to rotate the laser beam.

FIG. 3C shows a side view of laser module 100C according to some embodiments of the present invention, wherein light guide 105 is present and light guide 301 is absent. In the embodiment of FIG. 3C, the laser source 102 and the optical encoder The array module 107 and the optical amplification module 303 are arranged on the substrate 110 in a substantially coplanar manner, so that the optical output interfaces 104-1 to 104-N of the laser source 102 are respectively connected to the optical layout module 107. The optical input interfaces 108-1 to 108-N are horizontally aligned so that the optical output interfaces 109-1 to 109-M of the optical arrangement module 107 are respectively connected to the optical input interfaces 304-1 to 304-M of the optical amplification module 303 Align horizontally. In this way, in the exemplary embodiment of FIG. 3C, at the optical output interfaces 104-1 to 104-N of the laser source 102 or at the optical input interfaces 108-1 to 108-N of the optical editing module 107 Either at the optical output interfaces 109 - 1 to 109 -M of the optical editing module 107 or at the optical input interfaces 304 - 1 to 304 -M of the optical amplification module 303 , there is no need to rotate the laser beam. In the embodiment of FIG. 3C , there is an empty space between the optical output interfaces 109 - 1 to 109 -M of the optical editing module 107 and the optical input interfaces 304 - 1 to 304 -M of the optical amplification module 303 . Therefore, in the embodiment of FIG. 3C , the multi-wavelength laser outputs MWL- 1 to MWL-M travel through respective linear paths passing through the empty space between the optical programming module 107 and the optical amplification module 303 . 3D shows a side view of the structure of the laser module 100C of FIG. 3C according to some embodiments of the present invention, wherein the empty space between the optical editing module 107 and the optical amplification module 103 is covered by a member 307 and/or sealed. In various embodiments, the component 307 can be another chip provided during packaging, or another material provided during packaging, or can be an integral part of the laser source light guide 105, or an integral part of the optical amplification module 303 Integrate components.

3E shows a side view of laser module 100C according to some embodiments of the present invention, wherein light guide 105 is present and light guide 301 is absent, and light editing module 107 and optical amplification module 303 are arranged in side-by-side contact. In the structure of the exemplary laser module 100C of FIG. 3E , the optical editing module 107 and the optical amplification module 303 are arranged on the substrate 110 in a substantially coplanar manner, so that the light output of the optical editing module 107 The interfaces 109-1 to 109-M are horizontally aligned with the optical input interfaces 304-1 to 304-M of the optical amplification module 303 respectively, so as to be at the optical output interfaces 109-1 to 109-M of the optical arrangement module 107 Or there is no need to rotate the laser beam at the optical input interfaces 304 - 1 to 304 -M of the optical amplification module 303 .

FIG. 3F shows a side view of a laser module 100C according to some embodiments of the present invention, wherein the light guide 301 is not present and the light editing module 107 and the optical amplification module 303 are in vertical overlapping contact. configuration. In the structure of the exemplary laser module 100C of FIG. 3F , the substrate 110 is used to support each of the laser source 102 , the light guide 105 , the light editing module 107 and the optical amplification module 303 . In the structure of the exemplary laser module 100C of FIG. 3F, the optical output interfaces 109-1 to 109-M of the optical arrangement module 107 are respectively connected to the optical input interfaces 304-1 to 304-M of the optical amplification module 303. Vertically aligned to complete the rotation of the laser beam at the optical output interfaces 109 - 1 to 109 -M of the optical arrangement module 107 and at the optical input interfaces 304 - 1 to 304 -M of the optical amplification module 303 .

FIG. 3G shows a side view of the structure of the laser module 100C of FIG. 3F according to some embodiments of the present invention, wherein the optical amplification module 303 extends across the optical editing module 107, the light guide 105, and the electroluminescence source 102 so as to The optical amplification module 303 is made to provide physical support for the placement of each of the light editing module 107, the light guide 105, and the laser source 102 within the laser module 100C. In the structure of the exemplary laser module 100C of FIG. 3G, if the optical amplifying module 303 is formed with sufficient mechanical strength to physically support itself and each of the optical editing module 107, the light guide 105 and the laser source 102 , the substrate 110 can be omitted.

Figure 3H shows a side view of a modification of the structure of the laser module 100C of Figure 3B in which the light guide 105 is absent, according to some embodiments of the present invention. In this way, the structure of the laser module 100C of FIG. 3H represents a modification of the laser module 100C of FIG. 3B to feature the lack of light guide 105 relative to the laser module 100A of FIG. 1C described above.

FIG. 3I shows a side view of a modification of the structure of the laser module 100C of FIG. 3C in which the light guide 105 is absent, according to some embodiments of the present invention. In this way, the structure of the laser module 100C of FIG. 3I represents a modification of the laser module 100C of FIG. 3C to feature the lack of light guide 105 relative to the laser module 100A of FIG. 1C described above.

Figure 3J shows a side view of a modification of the structure of the laser module 100C of Figure 3E in which the light guide 105 is absent, according to some embodiments of the present invention. In this way, the structure of the laser module 100C of FIG. 3J represents a modification of the laser module 100C of FIG. 3E to feature the lack of light guide 105 relative to the laser module 100A of FIG. 1C described above.

Figure 3K shows a side view of a modification of the structure of the laser module 100C of Figure 3F in which the light guide 105 is absent, according to some embodiments of the present invention. In this way, the structure of the laser module 100C of FIG. 3K represents a modification of the laser module 100C of FIG. 3F to feature the lack of light guide 105 relative to the laser module 100A of FIG. 1C described above.

FIG. 3L shows a side view of a modification of the structure of the laser module 100C of FIG. 3G in which the light guide 105 is absent, according to some embodiments of the present invention. In this way, the structure of the laser module 100C of FIG. 3L represents a modification of the laser module 100C of FIG. 3G to feature the lack of light guide 105 relative to the laser module 100A of FIG. 1C described above.

3M shows a side view of a modification of the structure of the laser module 100C of FIG. 3B in which the laser source 102 and the optical programming module 107 are arranged in side-by-side contact, according to some embodiments of the present invention. In this way, the structure of the laser module 100C of FIG. 3M represents a modification of the laser module 100C of FIG. 3B to have the laser source 102 and light editing module relative to the laser module 100A of FIG. 1E described above. 107 Features arranged in side-by-side contact.

FIG. 3N shows a side view of a modification of the structure of the laser module of FIG. 3C according to some embodiments of the present invention, wherein the laser source 102 and the optical programming module 107 are arranged in side-by-side contact. In this way, the structure of the laser module 100C of FIG. 3N represents a modification of the laser module 100C of FIG. 3C to have the laser source 102 and light editing module relative to the laser module 100A of FIG. 1E described above. 107 Features arranged in side-by-side contact.

FIG. 3O shows a side view of a modification of the structure of the laser module 100C of FIG. 3E according to some embodiments of the present invention, wherein the laser source 102 and the optical programming module 107 are arranged in side-by-side contact. In this way, the structure of laser module 100C of FIG. 3O represents a modification of laser module 100C of FIG. 107 Features arranged in side-by-side contact.

FIG. 3P shows a side view of a modification of the structure of the laser module 100C of FIG. 3F according to some embodiments of the present invention, wherein the laser source 102 and the optical programming module 107 are arranged in side-by-side contact. In this way, the structure of the laser module 100C of FIG. 3P represents a modification of the laser module 100C of FIG. 3F to have the laser source 102 and light editing module relative to the laser module 100A of FIG. 107 Features arranged in side-by-side contact.

3Q shows a side view of a modification of the structure of the laser module 100C of FIG. 3G according to some embodiments of the present invention, wherein the laser source 102 and the optical programming module 107 are arranged in side-by-side contact. In this way, the structure of the laser module 100C of FIG. 3Q represents a modification of the laser module 100C of FIG. 3G to have the laser source 102 and optical editing module relative to the laser module 100A of FIG. 107 Features arranged in side-by-side contact.

3R shows a side view of a modification of the structure of the laser module 100C of FIG. 3B according to some embodiments of the present invention, wherein the laser source 102 and the optical programming module 107 are arranged in vertical overlapping contact. In this way, the structure of the laser module 100C of FIG. 3R represents a modification of the laser module 100C of FIG. 3B to have the laser source 102 and light editing module relative to the laser module 100A of FIG. 1F described above. 107 Features set in vertical overlapping contact.

Figure 3S shows a side view of a modification of the structure of the laser module 100C of Figure 3R according to some embodiments of the present invention, wherein the optical programming module 107 extends across the laser source 102, the light guide 301 and the optical amplification module 303 . In the structure of the laser module 100C in FIG. 3S , the optical arrangement module 107 provides physical support for setting the laser source 102 , the light guide 301 and the optical amplification module 303 . In the structure of the exemplary laser module 100C of FIG. 1S, if the formation of the optical programming module 107 has sufficient mechanical strength to physically support itself and each of the laser source 102, the light guide 301 and the optical amplification module 303 , the substrate 110 can be omitted.

Figure 3T shows a side view of a modification of the structure of the laser module 300C of Figure 3R, in which the light guide 301 is absent, according to some embodiments of the present invention. In this way, the laser module 100C of FIG. 3T The structure of FIG. 3R represents a modification of the laser module 100C of FIG. 3R to have features related to the lack of light guide 301 of the laser module 100A of FIG. 3C described above.

FIG. 3U shows a side view of a modification of the structure of the laser module 100C of FIG. 3S in which the light guide 301 is absent, according to some embodiments of the present invention. In this way, the structure of the laser module 100C of FIG. 3U represents a modification of the laser module 100C of FIG. 3S to feature the absence of a light guide 301 relative to the laser module 100A of FIG. 3C described above.

FIG. 3V shows a side view of a modification of the structure of the laser module 100C of FIG. 3T according to some embodiments of the present invention, wherein the light guide 301 is absent and the optical programming module 107 and the optical amplification module 303 are in side-by-side contact. configuration. In this way, the structure of the laser module 100C of FIG. 3V represents a modification of the laser module 100C of FIG. 3T to have the features and light-organizing modes relative to the lack of light guide 301 of the laser module 100A of FIG. 3E described above. The characteristic that the group 107 and the optical amplification module 303 are arranged in a side-by-side contact manner.

Figure 3W shows a side view of a modification of the structure of the laser module 100C of Figure 3S according to some embodiments of the present invention, wherein the light guide 301 is absent and the optical programming module 107 and the optical amplification module 303 are in side-by-side contact configuration. In this way, the structure of the laser module 100C of FIG. 3W represents a modification of the laser module 100C of FIG. 3S to have the features and light-organizing modes relative to the lack of light guide 301 of the laser module 100A of FIG. 3E described above. The characteristic that the group 107 and the optical amplification module 303 are arranged in a side-by-side contact manner.

Figure 3X shows a side view of a modification of the structure of the laser module 100C of Figure 3R according to some embodiments of the present invention, wherein the light guide 301 is absent and the optical programming module 107 and the optical amplification module 303 are in vertical overlapping contact mode configuration. In this way, the structure of the laser module 100C of FIG. 3X represents a modification of the laser module 100C of FIG. 3R to have the features and light-organizing modes relative to the lack of light guide 301 of the laser module 100A of FIG. 3F described above. The feature that the group 107 and the optical amplification module 303 are vertically overlapped and contacted.

Figure 3Y shows a side view of a modification of the structure of the laser module 100C of Figure 3X according to some embodiments of the present invention, wherein the optical programming module 107 extends across the laser source 102 and the optical amplification module 303 so that the optical programming module 107 provides physical support for the arrangement of each of the laser source 102 and the optical amplification module 303 in the laser module 100C. In the structure of the exemplary laser module 100C of FIG. 3Y, if the formation of the optical programming module 107 has sufficient mechanical strength to physically support itself and each of the laser source 102 and the optical amplification module 303, it can The substrate 110 is omitted.

FIG. 4A shows a structural diagram of a laser module 100D according to some embodiments of the present invention. Laser module 100D includes laser source 102A and light programming module 107A implemented within the same PLC 200 as described for FIG. 2A. The laser module 100D also includes a light guide 301 and an optical amplification module 303 as described with respect to FIG. 3A . In some embodiments, the PLC 200 , the light guide 301 and the optical amplification module 303 are disposed on the substrate 110 . It should be understood that the configuration of the laser module 100D is such that it outputs MWL-1 to MWL-M from the complex multi-wavelength laser output interfaces 109-1 to 109-M of the optical arrangement module 107A in the PLC 200, respectively. Lead to the corresponding ones of the plurality of optical input interfaces 304 - 1 to 304 -M of the optical amplification module 303 .

FIG. 4B shows a side view of the structure of the laser module 100D of FIG. 4A according to some embodiments of the present invention. In the structure of the laser module 100D in FIG. 4B, the PLC 200 and the optical amplification module 303 are arranged on the substrate 110 in a substantially coplanar manner so that the optical output interfaces 109-1 to 109 of the optical arrangement module 107A -M are respectively horizontally aligned with the optical input interfaces 304-1 to 304-M of the optical amplification module 303, so as to be at the optical output interfaces 109-1 to 109-M of the optical arrangement module 107A or at the optical amplification module There is no need to rotate the laser beam at the light input interfaces 304-1 to 304-M of 303.

FIG. 4C shows a side view of the laser module 100D of FIG. 4B without the light guide 301 in accordance with some embodiments of the present invention. In the embodiment of FIG. 4C, the PLC 200 and the optical amplification module 303 are arranged on the substrate 110 in a substantially coplanar manner so that the optical output interfaces 109-1 to 109-M of the optical arrangement module 107A are respectively connected to the optical The optical input interfaces 304-1 to 304-M of the amplification module 303 are aligned horizontally so as to be at the optical output interfaces 109-1 to 109-M of the optical arrangement module 107A or at the optical input interfaces of the optical amplification module 303 There is no need to rotate the laser beam at 304-1 to 304-M. In the embodiment of Fig. 4C, There is an empty space between the optical output interfaces 109 - 1 to 109 -M of the optical editing module 107A and the optical input interfaces 304 - 1 to 304 -M of the optical amplification module 303 . Therefore, in the embodiment of FIG. 4C , the laser beams output from the PLC 200 travel through respective linear paths through the empty space between the PLC 200 and the optical amplification module 303 . 4D shows a side view of the structure of the laser module 100D of FIG. 4C according to some embodiments of the present invention, wherein the empty space between the PLC 200 and the optical amplification module 303 is covered and/or sealed by a member 401 . In various embodiments, the component 401 may be another chip provided during packaging, or another material provided during packaging, or may be an integral part of the PLC 200 or an integral part of the optical amplification module 303 .

4E shows a side view of the laser module 100D of FIG. 4A in which the light guide 301 is absent and the PLC 200 and the optical amplification module 303 are arranged in side-by-side contact, according to some embodiments of the present invention. In the embodiment of FIG. 4E, the PLC 200 and the optical amplification module 303 are arranged on the substrate 110 in a substantially coplanar manner so that the optical output interfaces 109-1 to 109-M of the optical arrangement module 107A are respectively connected to the optical The optical input interfaces 304-1 to 304-M of the amplification module 303 are aligned horizontally so as to be at the optical output interfaces 109-1 to 109-M of the optical arrangement module 107A or at the optical input interfaces of the optical amplification module 303 There is no need to rotate the laser beam at 304-1 to 304-M.

FIG. 5A shows a block diagram of a laser module 100E according to some embodiments of the present invention, wherein the optical editing module 107B and the optical amplification module 303A are implemented together in the same PLC 503 . The function of the optical programming module 107B is substantially the same as that of the optical programming module 107 described above for the laser module 100A. The function of the optical amplification module 303A is substantially the same as that of the optical amplification module 303 described above for the laser module 100C. In the PLC 503, the optical editing module 107B and the optical amplification module 303A are implemented in an integrated manner, so that the complex multi-wavelength laser outputs MWL-1 to MWL-M provided by the optical editing module 107B do not need When passing through the optical output interface and the optical input interface (respectively shown by lines 501-1 to 501-M), it is guided into the optical amplification module 303A. Also, in the PLC 503, due to the optical integration between the optical arrangement module 107B and the optical amplification module 303A, no separate The light guide 301 is separated. In some embodiments of the laser module 100E, the laser source 102 , the light guide 105 and the PLC 503 are disposed on the substrate 110 . It should be understood that the configuration of the laser module 100E is such that the plurality of laser beams from the optical output interfaces 104-1 to 104-N of the laser source 102 are directed to the plurality of optical input interfaces of the optical arrangement module 107 in the PLC 503 Correspondence in 108-1 to 108-NB.

FIG. 5B shows a side view of the structure of the laser module 100E of FIG. 5A according to some embodiments of the present invention. In the structure of the laser module 100E in FIG. 5B , the PLC 503 and the laser source 102 are arranged on the substrate 110 in a substantially coplanar manner so that the light output interfaces 104-1 to 104-N of the laser source 102 They are respectively horizontally aligned with the optical input interfaces 108-1 to 108-N of the optical arrangement module 107B, so as to be at the optical output interfaces 104-1 to 104-N of the laser source 102 or between the optical arrangement module 107 There is no need to rotate the laser beams at the optical input interfaces 108-1 to 108-N.

FIG. 5C shows a side view of the structure of the laser module 100E of FIG. 5B without the light guide 105 in accordance with some embodiments of the present invention. In the embodiment of FIG. 5C, the PLC 503 and the laser source 102 are arranged on the substrate 110 in a substantially coplanar manner, so that the light output interfaces 104-1 to 104-N of the laser source 102 are arranged with the light respectively. The optical input interfaces 108-1 to 108-N of the module 107B are horizontally aligned so that the optical output interfaces 104-1 to 104-N of the laser source 102 or at the optical input interface 108-N of the optical arrangement module 107 1 to 108-N does not need to rotate the laser beam. In the embodiment of FIG. 5C , empty spaces exist between the light output interfaces 104 - 1 to 104 -N of the laser source 102 and the light input interfaces 108 - 1 to 108 -N of the light editing module 107 . Thus, in the embodiment of FIG. 5C , the laser beams output from the laser source 102 follow respective linear paths through the empty space between the laser source 102 and the PLC 503 . 5D shows a side view of the structure of the laser module 100E of FIG. 5C according to some embodiments of the present invention, wherein the empty space between the laser source 102 and the PLC 503 is covered and/or sealed by a member 505 . In various embodiments, component 505 may be another chip provided during packaging, or another material provided during packaging, or may be an integral part of PLC 503, or may be an integral part of laser source 102 .

Figure 5E shows a side view of laser module 100E in which light guide 105 is absent and laser source 102 and PLC 503 are arranged in side-by-side contact, according to some embodiments of the present invention. In the embodiment of FIG. 5E, the laser source 102 and the PLC 503 are arranged on the substrate 110 in a substantially coplanar manner, so that the light output interfaces 104-1 to 104-N of the laser source 102 are respectively connected to the light output interfaces. The light input interfaces 108-1 to 108-N of the arrangement module 107B are horizontally aligned so that the light output interfaces 104-1 to 104-N of the laser source 102 or at the light input interface 108 of the light arrangement module 107 -1 to 108-N does not need to turn the laser beam.

FIG. 6A shows a block diagram of a laser module 100F according to some embodiments of the present invention, wherein the laser source 102A, the light editing module 107C and the amplification module 303A are implemented together in the same PLC 601 . The function of the laser source 102A is substantially the same as that of the laser source 102 described above for the laser module 100A. The function of the optical programming module 107C is substantially the same as that of the optical programming module 107 described above for the laser module 100A. The function of the optical amplification module 303A is substantially the same as that of the optical amplification module 303 described above for the laser module 100C. In the PLC 601, the laser source 102A and the light editing module 107C are implemented in an integrated manner so that the laser beams 201-1 to 201-N generated by the plurality of lasers 103-1 to 103-N If they need to pass through the optical output interface and the optical input interface respectively, they are guided into the optical arrangement module 107C. Also, in the PLC 601, due to the optical integration between the laser source 102A and the light editing module 107C, no separate light guide 105 is required. Also, in the PLC 601, the optical editing module 107C and the optical amplification module 303A are implemented in an integrated manner so that the complex multi-wavelength laser outputs MWL-1 to MWL-M provided by the optical editing module 107C It is guided into the optical amplification module 303A without going through the optical output interface and the optical input interface (shown by lines 501 - 1 to 501 -M respectively). Also, in the PLC 601, due to the optical integration between the light orchestration module 107C and the light amplification module 303A, no separate light guide 301 is required. FIG. 6B shows a side view of the structure of the laser module 100F of FIG. 6A according to some embodiments of the present invention.

It should be appreciated that geometric representations of each of the laser sources 102/102A, light guides 105/301, light editing modules 107/107A/107B/107C, and optical amplification modules 303/303A disclosed herein are provided for The present invention is briefly described as an example. In various embodiments, each of the laser source 102/102A, the light guide 105/301, the light editing module 107/107A/107B/107C, and the optical amplification module 303/303A can have a shape and size that can be formed into a desired shape and size. Virtually any geometry desired for optoelectronic devices. In some embodiments, one or more of laser source 102/102A, light guide 105/301, light editing module 107/107A/107B/107C, and optical amplification module 303/303A may be configured to have a substantially planar Geometry. In some embodiments, one or more of the laser source 102/102A, the light guide 105/301, the light editing module 107/107A/107B/107C, and the optical amplification module 303/303A can be configured with three-dimensional changes. Geometric shapes are shapes that are not simple rectangular prisms. Also, it should be appreciated that in various embodiments, each of the laser source 102/102A, the light guide 105/301, the light editing module 107/107A/107B/107C, and the optical amplification module 303/303A are in relation to each other. Any reference direction of the coordinate system may have different measured dimensions in the x-direction, y-direction and z-direction of the Cartesian coordinate system.

Figure 7 shows an exemplary embodiment of an optical programming module 107/107A/107B/107C according to some embodiments of the present invention, which includes an Nx1 (polarization maintaining) wavelength combiner 701 and a 1xM (polarization maintaining) broadband Power splitter 705 . The wavelength combiner 701 is used to combine the plurality of laser beams received at the optical input interfaces 108-1 to 108-N into a multi-wavelength laser beam, and the multi-wavelength laser beam is from the wavelength combiner 701 through the light guide 703 to the broadband power splitter 705. The broadband power divider 705 is used to distribute a plurality of parts of the total power of the multi-wavelength laser beam to each of the plurality of optical output interfaces 109-1 to 109-M of the optical programming module 107/107A/107B/107C .

FIG. 8 shows an exemplary embodiment of an optical programming module 107/107A/107B/107C according to some embodiments of the present invention, which includes an arrayed waveguide 801 and a broadband power divider 805 . In the example of FIG. 8, the arrayed waveguide 801 is a 16-to-1 arrayed waveguide. It should be understood, however, that in various embodiments, the arrayed waveguides 801 can be used to receive any number (N) of optical inputs. enter. Also, in the example shown in FIG. 8 , the broadband power divider 805 is a 1-to-16-16 broadband power divider. It should be appreciated, however, that in various embodiments, the broadband power divider 805 may be used to output any number (M) of light outputs. The arrayed waveguide 801 is used to combine the plurality of laser beams received at the optical input interfaces 108-1 to 108-16 into a multi-wavelength laser beam, and the multi-wavelength laser beam is from the arrayed waveguide 801 through the light guide 803 is transmitted to a broadband power splitter 805. The broadband power splitter 805 is used to distribute a plurality of parts of the total power of the multi-wavelength laser beam to each of the plurality of optical output interfaces 109-1 to 109-16 of the optical programming module 107/107A/107B/107C .

FIG. 9 shows an exemplary embodiment of an optical programming module 107/107A/107B/107C including an echelle grating 901 and a broadband power divider 905 according to some embodiments of the present invention. In the example of FIG. 8, the echelle grating 901 is a 16-to-1 grating. It should be appreciated, however, that in various embodiments, echelle grating 901 may be used to receive any number (N) of light inputs. Also, in the example shown in FIG. 9 , the broadband power divider 905 is a 1-to-16 broadband power divider. It should be appreciated, however, that in various embodiments, the broadband power splitter 905 may be used to output any number (M) of light outputs. The stepped grating 901 is used to combine the multiple laser beams received at the optical input interfaces 108-1 to 108-16 into a multi-wavelength laser beam. The multi-wavelength laser beam is transmitted from the stepped grating 901 to the broadband through the light guide 903. power divider 905 . The broadband power splitter 905 is used to distribute a plurality of parts of the total power of the multi-wavelength laser beam to each of the plurality of optical output interfaces 109-1 to 109-16 of the optical programming module 107/107A/107B/107C .

FIG. 10 shows an exemplary embodiment of an optical programming module 107/107A/107B/107C including a butterfly waveguide network 1001 according to some embodiments of the present invention. In the example shown in FIG. 10 , the butterfly waveguide network 1001 is a network with 16 inputs and 16 outputs. It should be appreciated, however, that in various embodiments, the butterfly waveguide network 1001 may be configured to receive any number (N) of optical inputs and provide any number (M) of optical outputs. Butterfly waveguide network 1001 is used to receive (N) from optical input interfaces 108-1 to 108-N The laser beams and distributes a plurality of parts of each of the (N) laser beams to each of the (M) optical output interfaces of the optical programming modules 107/107A/107B/107C.

Figure 11 shows an exemplary embodiment of a light orchestration module 107/107A/107B/107C including a star coupler 1101 according to some embodiments of the present invention. In the example shown in FIG. 11 , the star coupler 1101 is a 16-input to 16-output star coupler. It should be appreciated, however, that in various embodiments, star coupler 1101 may be used to receive any number (N) of optical inputs and provide any number (M) of optical outputs. The star coupler 1101 is used to receive the (N) laser beams from the optical input interfaces 108-1 to 108-N and distribute a plurality of each of the (N) laser beams to the optical programming module 107/ Each of the (M) optical output interfaces of 107A/107B/107C.

Figure 12A shows an exemplary embodiment of a light orchestration module 107/107A/107B/107C comprising a resonant ring array 1201 according to some embodiments of the present invention. In the example of FIG. 12A , the resonant ring array 1201 is a resonant ring array with 16 inputs and 16 outputs. It should be appreciated, however, that in various embodiments, resonant ring array 1201 may be used to receive any number (N) of light inputs and provide any number (M) of light outputs. Resonant ring array 1201 is used to receive (N) laser beams from optical input interfaces 108-1 to 108-N and distribute a plurality of each of the (N) laser beams to optical programming module 107/107A Each of the (M) optical output interfaces of /107B/107C.

Figure 12B shows a detailed illustration of a resonant ring array 1201 according to the present invention. The resonant ring array 1201 includes complex resonant ring columns R ₁ to _RN , the number of which is equal to the number (N) of complex laser beams received at (N) optical input interfaces 108 - 1 to 108 -N respectively. Each resonant ring row R ₁ to _RN includes a plurality of resonant rings 1203, the number of which is equal to the number (M) of the plurality of optical output interfaces 109-1 to 109-M of the optical programming module 107/107A/107B/107C. Each of the resonant ring columns R ₁ to _RN is used to receive a different beam of the plurality of laser beams as a corresponding input laser beam. Therefore, each resonant ring column R ₁ to RN receives a different one of the wavelengths (λ1−λN) of the ( _N ) laser beams received by the laser source 102/102A. Also, for this reason, each resonant ring 1203 of a particular one of the resonant ring rows R ₁ to _RN can be optimized for operation at a particular laser beam wavelength that the particular resonant ring row is intended to receive. Also, thus the resonant rings 1203 _of the different resonant ring rows R1 to _RN can be optimized for operation at different laser beam wavelengths. Each resonant ring 1203 in _a particular resonant ring column R1 to _RN is used to redirect a portion of the corresponding input laser beam of that particular resonant ring column to a plurality of optical programming modules 107/107A/107B/107C A different one of the optical output interfaces 109-1 to 109-M (shown by arrow 1205). In some embodiments, the resonant rings 1203 of _a particular resonant ring row R1 to _RN are configured to receive the corresponding input laser beams of the particular resonant ring row in a continuous manner, wherein the Successively arranged resonant rings 1203 of a particular resonant ring column are used to gradually redirect a larger portion of the corresponding input laser beam of that particular resonant ring column. In this way, the resonant rings 1203 of _a particular resonant ring row R1 to _RN provide substantially the same amount of laser light to the optical output interfaces 109-1 to 109-M of the optical programming modules 107/107A/107B/107C each of.

FIG. 13 shows an exemplary embodiment of a laser module 100F on a PLC 601 in which an orchestration module 107C is implemented to include an arrayed waveguide 801 and a broadband power divider 805 according to some embodiments of the present invention. FIG. 14 shows an exemplary embodiment of a laser module 100F on a PLC 601 in which an orchestration module 107C is implemented to include an echelle grating 901 and a broadband power divider 905 in accordance with some embodiments of the present invention. FIG. 15 shows an exemplary embodiment of a laser module 100F on a PLC 601 implementing an orchestration module 107C to include a butterfly waveguide network 1001 in accordance with certain embodiments of the present invention. Figure 16 shows an exemplary embodiment of a laser module 100F on a PLC 601 in which an orchestration module 107C is implemented to include a star coupler 1101 in accordance with certain embodiments of the present invention.

FIG. 17 shows a flowchart of a method of operation of laser modules 100A- 100F according to some embodiments of the present invention. The method includes operation 1701 of operating a laser source to generate and output a plurality of laser beams, wherein the plurality of laser beams have different wavelengths relative to each other. The different wavelengths of the plurality of laser beams are distinguishable for optical data communication systems. The method also includes operation 1703 of distributing a portion of each of the plurality of laser beams to each of the plurality of optical output interfaces of the laser modules 100A-100F. Operation 1703 is performed such that all of the different wavelengths of the plurality of laser beams are provided to laser modules 100A-100F Each of the plurality of optical output interfaces. In some embodiments, the method optionally includes operation 1705, amplifying the laser light distributed to the plurality of light output interfaces of the laser modules 100A-100F. In some embodiments, operation 1701 is performed by laser source 102/102A, operation 1703 is performed by optical editing module 107/107A/107B/107C, and operation 1705 is performed by optical amplification module 303/303A. In some embodiments, any two or more of the laser source 102/102A, the optical editing module 107/107A/107B/107C, and the optical amplification module 303/303A operate as physically separate components. Also, in some embodiments, any two or more of the laser source 102/102A, the optical editing module 107/107A/107B/107C, and the optical amplification module 303/303A are disposed on the common substrate 110 and/or in the same PLC.

In some embodiments, the method includes directing a plurality of laser beams from a laser source 102/102A into an optical programming module 107/107A/107B/107C. In some embodiments, a plurality of laser beams are directed from the laser source 102/102A through an empty space and directed from the empty space into the optical programming module 107/107A/107B/107C. In some embodiments, the method includes transmitting the plurality of laser beams through the light guide 105 to direct the plurality of laser beams from the laser source 102/102A into the optical programming module 107/107A/107B/107C. In some embodiments, the method includes transmitting the plurality of laser beams through one or more optical vertical coupling devices to direct the plurality of laser beams from the laser source 102/102A into the optical programming module 107/107A/107B/107C . In some embodiments, the method includes maintaining the polarization of the plurality of laser beams when portions of the plurality of laser beams are distributed to each of the plurality of light output interfaces of the laser modules 100A- 100F.

In some embodiments, each of the plurality of laser beams is generated using a respective distributed feedback laser. In some embodiments, the method includes controlling the temperature of the different profiles of the feedback lasers to provide substantial uniformity of temperature-dependent wavelength shift among the different profiles of the feedback lasers. Also, in some embodiments, the method includes controlling the allocation of a portion of each of the plurality of laser beams to each of the plurality of optical output interfaces of the laser modules 100A-100F such that the plurality of optical output interfaces Each receives a similar amount of optical power for any particular beam of the plurality of laser beams within a particular multiple. in some In an embodiment, the specific multiple is five times. In certain embodiments, the particular multiple is one, two, three, four, six, or any multiple between any such multiples.

It should be further understood that the present invention also includes the manufacturing method of each of the laser modules 100A- 100F disclosed herein. Also, such methods of manufacturing laser modules 100A-100F may include substantially any known and established process and/or technique for fabricating semiconductor devices and for fabricating components/substrates that interface with one or more semiconductor devices .

In some embodiments, laser modules 100A- 100F are designed to deliver laser light having one or more wavelengths. The laser modules 100A-100F can be arranged into several main components, which include: a laser source 102/102A, including a plurality of lasers such as laser diodes, and each laser generates the output of the laser source 102/102A A sub-combination of a plurality of wavelengths; an optical programming module 107/107A/107B/107C, which provides a combiner, coupler and/or splitter network (CCSN), whose input is from the laser source 102/102A output wavelength; an optical amplifier module 303/303A comprising a plurality of optical amplifiers operating to increase the amount of optical power output by the laser modules 100A-100F but possibly at the expense of noise-to-signal ratio; a fiber-coupled array , are connected to bring light out of the laser modules 100A-100F; light guides 105, 301 (which may include couplers, reflective surfaces, and/or lenses) to guide, collimate and/or couple light to/from the light orchestration modules 107/107A/107B/107C, from the laser source 102/102A, from/to the optical fiber coupling array, and from/to the optical amplifier module 303/303A; a heat dispersion element such as a heat-conducting substrate, the laser source 102/102A All the lasers in the laser are thermally linked together (such as copper attaches all the laser diodes together) to minimize the temperature difference between the laser diodes, where in some embodiments, the heat spreading element It may be the same substrate 110 on which the laser sources 102/102A, optical programming modules 107/107A/107B/107C, and optical amplifier modules 303/303A are built and/or attached.

In various embodiments, the optical programming module 107/107A/107B/107C can be implemented in several ways, including using discrete components or as an integrated device such as a planar lightwave circuit (PLC). Various embodiments of the optical programming module 107/107A/107B/107C may include the following features:

A PLC structure that offers the advantage of maintaining its polarization for light propagating through the light programming module 107/107A/107B/107C.

A PLC structure, wherein the laser source 102/102A and/or the optical amplifier module 303/303A can be constructed using the same substrate of the optical programming module 107/107A/107B/107C - wherein the optical programming module 107/107A/107B/ The substrate of 107C supports the construction of the laser source 102/102A (eg, a specific III-V or IV substrate).

A PLC structure in which the laser source 102/102A and/or the optical amplifier module 303/303A can be attached to the optical programming module 107/107A/107B/107C by, for example, flip-chip bonding.

A PLC structure where laser source 102/102A can couple light to and from structures in the PLC - where light programming module 107/107A/107B/107C can include laser source 102/102A The laser cavity and/or one or more light guides, the output laser light is coupled into/through the coupling device from the laser cavity and/or the light guide.

a PLC structure, wherein the optical amplification module 303/303A can couple light to and from the structure in the PLC - wherein the light orchestration module 107/107A/107B/107C can provide one or more light guides, The input and output light of the optical amplifier is coupled from the light guide to and from the amplifier via suitable coupling means, for example including grating couplers, edge couplers and progressively coupled waveguides, among others.

In some embodiments, the glass substrate may not have sufficient thermal conductivity to provide thermal coupling to the laser source 102/102A. In such embodiments, a glass substrate (eg, using silicon photonics) can be used to provide thermal conductivity, provided that the low-index cladding material (buried oxide or deep trench layer) is also thermally conductive or not too thick. guide sex. Alternatively, III-V substrates such as GaAs or InP also have high thermal conductivity and may similarly be suitable materials for the thermal coupling of laser source 102/102A.

In various embodiments, the optical programming module 107/107A/107B/107C has many possible configurations, which include among others: the optical programming module 107/107A/107B/107C can be constructed as a fan-in, For an N-symmetrical star coupler, it not only combines N wavelengths but also divides the power into N parts.

The optical programming module 107/107A/107B/107C can be constructed as a fan-in and fan-out N-to-M asymmetric star coupler, which not only combines N wavelengths but also divides the power into M parts.

The optical programming module 107/107A/107B/107C can be constructed as an N-to-N star coupler by using N/2*log ₂ N 2x2 splitters/couplers. Such a structure sums from n=1 to log ₂ N-1 in (2n-1) waveguide crossings in the most intuitive implementation.

The optical programming module 107/107A/107B/107C can be configured as a 1-to-N splitter for reverse use. This structure outputs 1/2N of the total output laser power and discards the rest.

The optical programming module 107/107A/107B/107C can be constructed as an arrayed waveguide (AWG) plus a splitter.

In some embodiments, the optical amplifier modules 303/303A are used to increase the output power of the laser modules 100C-100F. In some embodiments, the optical amplifier module 303/303A may include the following features: The optical amplifier may have various forms such as semiconductor optical amplifier, erbium/ytterbium doped fiber amplifier, Raman amplifier, among others.

Optical amplifiers can be used to amplify input light of a single wavelength or multiple wavelengths.

When amplifying multiple wavelengths, each optical amplifier may have sufficient optical bandwidth to amplify all input wavelengths.

If the bandwidth of the wavelengths is sufficient to exceed the bandwidth of individual optical amplifiers, then a plurality of optical amplifiers are used to amplify all wavelengths, and each optical amplifier amplifies only a subset of wavelengths that fall within its amplified bandwidth. In this case, optical amplifiers can be added to intermediate points within the optical programming module 107/107A/107B/107C and the input to each optical amplifier is defined to have a sub-combination of the wavelengths that the optical amplifier amplifies.

In some embodiments, an interposer device may be used to provide the combined functionality of substrate 110 and one or more optical elements, such as waveguides 105 and 301 and programming modules 107, 107A, 107B, 107C, among others. In certain embodiments, the interposer device is within an integrated silicon photonics device and/or within a III-V photonics enabled multi-chip module (MCM), within a system-in-package (SiP), within a heterogeneous integrated product. Figure 18A shows an exemplary interposer device 1801 in which the functions of substrate 110 and waveguides 105 and 301 are combined, according to some embodiments of the invention. In the example of FIG. 18A , interposer device 1801 has the function of substrate 110 and includes waveguides 105 and 301 . The laser source 102 interfaces with the insert device 1801 . Also, the optical amplification module 303 is connected to the interposer device 1801 .

Silicon photonics die/chip 1803 also interfaces with interposer device 1801 . In some embodiments, another device capable of performing the same function as silicon photonic die/chip 1803 may replace silicon photonic die/chip 1803 . In some embodiments, silicon photonics die/wafer 1803 is configured to have optical interfaces on more than one side. Also, silicon photonics die/wafer 1803 can be used to have optical interfaces on any combination of multiple sides. In some embodiments, however, the silicon photonics die/wafer 1803 is configured to have an optical interface on only one side. In some embodiments, the silicon photonics die/wafer 1803 is a CMOS drive die and the required silicon photonics devices are formed within the interposer device 1801 . In these embodiments, the silicon photonics die/chip 1803 is used as a CMOS driver chip to drive/interface the silicon photonics devices formed in the interposer device 1801 .

In some embodiments, the interposer device 1801 combines local metal routing and through-silicon vias (TSVs) with photonic components. It should also be appreciated that the interposer device 1801 includes light guides capable of causing various optical devices within the interposer device 1801, such as optical couplers (optical couplers), optical splitters (optical splitters), light guides, among others. (complex light guides), optical array waveguides (complex optical array waveguide) (AWG), optical star coupler (complex optical star coupler). For example, referring to FIG. 3A , in some embodiments, waveguides 105 and 301 and substrate 110 may be integrated together within the same interposer device and may be formed using the same components, materials, manufacturing processes, and the like. It should also be appreciated that substantially any one or more of one or more optical devices or their component(s) may be integrated with the substrate 110 to form an interposer device. For example, referring to FIG. 3A , in some embodiments, lightguide 105 may be integrated with substrate 110 within an interposer device, wherein lightguide 301 is configured as a separate structure interfacing with the interposer device.

In some embodiments, interposer device 1801 may also include a silicon photonic die/chip 1803 in addition to substrate 110 and one or more of waveguides 105 and 301 . For example, in some embodiments, the interposer device may be configured as a large silicon photonic die/chip 1803 that includes one or more light guides or other types of optical devices. In certain embodiments, waveguides 105 and 301 , substrate 110 and silicon photonics die/wafer 1803 may be formed within the same interposer device and may be formed using the same components, materials, fabrication processes, and the like. In various embodiments, the interposer device can be fabricated from silicon, glass, and/or other suitable optoelectronic device materials. In some embodiments, the lightguide structure may be formed using silicon, oxides (oxides), polymers (polymers), silicon nitride (silicon nitride), and/or any other material suitable for forming a lightguide in the insert device.

18B shows a top view of interposer device 1801 to illustrate the flexibility of disposing die/wafer 1805A- 1805D relative to interposer device 1801 in accordance with certain embodiments of the present invention. Dies/wafers 1805A-1805D may be any electronic and/or optoelectronic device. It should be appreciated that four dies/wafer 1805A-1805D are shown as an illustrative example. In various embodiments, one or more die/wafer(s) (eg, 1805A- 1805D ) may be disposed at substantially any location within interposer device 1801 in substantially any configuration necessary. It should also be understood that multiple die/wafers (eg, 1805A-1805D) can be provided on the interposer device if desired. In certain embodiments, multiple dies/wafers (eg, 1805A-1805D) are configured in a substantially symmetrical fashion for the interposer device disposed on the interposer device. within the total area. It should be appreciated, however, that in some embodiments, multiple die/wafers (eg, 1805A-1805D) are disposed in an asymmetric configuration within the total area of the interposer device on the interposer device.

An interposer device such as 1801 may include the required locally wound metal structures and/or through-glass vias (TGVs) to provide die/die(s) and/or other interfacing with the interposer device. An electrical connection between electronic devices. In some embodiments, the die/die(s) can be attached by utilizing flip-chip and/or bonding and/or virtually any other type of die/die attach to the interposer device to electrically connect the die/die(s) to conductive structures within the interposer device. Also, in various embodiments, interposer devices interfacing with light guiding structures within a die/die(s) may be edge coupled (tail coupled) and/or vertically coupled to optical structures within the interposer device.

Figure 19 shows a plan block diagram of an interposer device 1801A as part of an MCM integrated product according to some embodiments of the present invention. Interposer device 1801A includes electrical features/structures as well as optical features/structures. In various embodiments, interposer device 1801A may be formed of silicon, glass, ceramics, epoxy composite(s), polymer(s), and combinations thereof, among others. The interposer device 1801A functions as an optical mount and an electrical interposer and contains/supports an integrated photonic component such as a star coupler 1101 . It should be appreciated that star coupler 1101 is shown in FIG. 19 by way of illustration. In various embodiments, the star coupler 1101 of FIG. 19 may be substantially any other suitable type of photonic device, such as one or more of a butterfly network of optical splitters, an echelle grating, and/or any other suitable photonic device. Circuits are replaced by photonic circuits as described herein for the programming modules 107, 107A, 107B, 107C.

Also, the interposer device 1801A enables flip chip and/or wire bonding connections of electronic, optical and optoelectronic die/die(s). In the example of FIG. 19, a plurality (N) of optical amplifier modules 303-1 through 303-N interface with interposer device 1801A, where N can be one or more. In some embodiments, the optical amplifier modules 303-1 to 303-N are connected by flip chip, wire bonding, or other type connections to discrete die/chips of interposer device 1801A. Each optical amplifier module 303-1 to 303-N includes a plurality (M) of optical amplifiers 305-1 to 305-M. In various embodiments, each optical amplifier module 303-1 through 303-N includes a separate one of optical amplifiers 305-1 through 305-M for each lightguide connected to the optical amplifier module such that Each optical signal for data reception is amplified by the corresponding optical amplifier so that each optical signal for data transmission is amplified by the corresponding optical amplifier. Each of optical amplifier modules 303-1 through 303-N is optically connected to a fiber pair interposer connection 1903 via a corresponding one of light guides 1915-1 through 1915-N. The direction of the arrows representing the light guiding structures 1915-1 through 1915-N indicates the direction in which light propagates through the light guiding structures 1915-1 through 1915-N.

Also, in the example of FIG. 19, the laser source 102 interfaces with the interposer device 1801A. In some embodiments, laser source 102 is a discrete die/chip connected to interposer device 1801A by flip-chip connections, wire bond connections, or other types of connections. The laser source 102 includes (N) lasers 103-1 to 103-N. Interposer device 1801A includes light guide structure 1905 to guide laser light from laser source 102 to star coupler 1101 (or other photonic device). Star coupler 1101 (or other photonic device) is formed within interposer device 1801A. In other words, star coupler 1101 (or other photonic device) is a photonic device formed as part of interposer device 1801A. Interposer device 1801A also includes light guide structure 1907 to guide laser light from star coupler 1101 (or other photonic device) to silicon photonic die/wafer 1803 . Light guiding structures 1905 and 1907 are formed within interposer device 1801A. The direction of the arrows representing light guiding structures 1905 and 1907 indicates the direction in which light propagates through light guiding structures 1905 and 1907 . In some embodiments, silicon photonics die/die 1803 is a discrete die/die connected to interposer device 1801A by flip chip connections, wire bond connections, or other types of connections. Also, silicon photonics die/chip 1803 is optically connected to each of optical amplification modules 303-1 through 303-N via a corresponding set of light guides 1909-1 through 1909-N. The direction of the arrows representing the light guiding structures 1909-1 to 1909-N indicates the direction of light propagation through the light guiding structures 1909-1 to 1909-N. In some embodiments, the interposer device 1801A may include light guide structures (eg, 1905, 1907, 1909-1 through 1909-N) to support MCM integrated products. etc.) and one or more integrated spacers (multiple spacers) optimized for the corresponding structural layout. In certain embodiments, the integrated spacer(s) may be discrete spacers integrated within the interposer device 1801A.

The example of FIG. 19 shows a fiber-to-interposer connection 1903 . It should be appreciated, however, that in some embodiments, a plurality of fiber-to-interposer connections 1903 may be provided to receive optical signals into the interposer device 1801A. In certain embodiments, the configuration of the fiber-to-interposer connector 1903 may include a v-groove array that aligns the fiber to a spot-sized transducer on the interposer device 1801A. It should be understood, however, that in various embodiments, as long as the fiber-to-interposer connector 1903 is capable of directing light from one or more optical fibers to one or more corresponding optical fibers within the interposer device 1801A and vice versa, the use of Virtually any configuration of fiber-to-interposer connector 1903 .

Light entering the fiber-to-interposer connection 1903 may not have a controlled polarization. Also, it may be more efficient to employ optical amplifier modules 303-1 through 303-N that amplify only in one polarization. Accordingly, a plurality of polarization rotators 1901 are provided to receive input light from the connector region 1903 of the fiber-to-interposer, split both TE and TM polarizations of the input light into TE polarizations. In various embodiments, each polarization rotator 1901 can be a discrete element joined to the interposer device 1801A or can be integrated within the interposer device 1801A. In certain embodiments, all of the polarization rotators 1901 are discrete elements joined to the interposer device 1801A. In certain embodiments, all of the polarization rotators 1901 are integrated into the interposer device 1801A. In certain embodiments, a portion of the polarization rotator 1901 is a discrete component joined to the interposer device 1801A and a portion of the polarization rotator 1901 is integrated into the interposer device 1801A. Each polarization rotator 1901 is optically connected to a corresponding light guide 1911 which functions as an input waveguide to guide light from the fiber-to-interposer connection 1903 to the polarization rotator 1901 . Also, each polarization rotator 1901 is optically connected to two corresponding light guides 1913, and the light guide 1913 has the function of an output waveguide to guide the light from the polarization rotator 1901 to the optical amplifier modules 303-1 to 303-N One of the optical amplifier modules 303-1 to 303-N has the function of amplifying optical signals.

It should be appreciated that the polarization rotator 1901 with its corresponding input light guide 1911 and its corresponding two output light guides 1913 are collectively formed on/in the interposer device 1801A for each optical amplifier module 303-1 to 303-N. A structure that repeats (y) times. For example, consider that the fiber-to-interposer connector 1903 supports the connection of 12 fibers. Also, for this example, consider two optical amplifier modules 303-1 and 303-2 on/in interposer device 1801A. Thus for this example, each of the two optical amplifier modules 303-1 and 303-2 will serve 6 of the 12 fibers or half of the fibers connected to the connector 1903 of the fiber pair insert. Also, in this example, of the 6 fibers served by a particular one of the two optical amplifier modules 303-1 and 303-2, 3 fibers will be used for data transmission (TX) and 3 fibers Will be used for data reception (RX). Thus in this example, there are 3 (y=3) polarization rotators 1901 with their corresponding input light guides 1911 and their corresponding output light guides 1913 connected to serve the optical amplifier module 303 - 1 . Also, in this example, there are 3 (y=3) polarization rotators 1901 and their corresponding input light guides 1911 and output light guides 1913 connected to serve the optical amplifier module 303 - 2 . It should be appreciated that the number (y) of polarization rotators 1901 optically connected to a particular one of optical amplifier modules 303-1 through 303-N can be increased with the number of fiber optic connections connected to interposer device 1801A while increasing linearly. In various embodiments, the number of fiber optic connections to interposer device 1801A can be increased by duplicating fiber-to-interposer connections 1903 and/or by increasing the number of fibers per fiber-to-interposer connection 1903 .

For the fabrication of the polarization rotator 1901, it is advantageous to employ low temperature processing when forming the light guiding structure on the interposer device 1801A. In this context, low temperature processing means below about 450°C. Exemplary polarization rotators compatible with front-end-of-line (FEOL) SOI (silicon-on-insulator) wafers are described in: "Polarization rotator-splitters and controllers in a Si 3 N 4-on- SOI integrated photonics platform," by Sacher, Wesley D., et al., Optics express 22.9 (2014): 11167-11174 (hereinafter "Sacher"), the entire contents of which are incorporated herein by reference for all purposes. However, Sacher's polarization rotator limits the application of the polarization rotator-splitter to FEOL and SOI interposer devices. In order to make Sacher's polarization rotator have more functions, in the back-end process (BEOL) implements a polarization rotator using cryogenic processing. One challenge of this approach is the use of BEOL-matched films. Low-temperature amorphous silicon (a-Si and/or a-Si-H) is known to be a low-attenuation thin film, as described in: "Use of amorphous silicon for active photonic devices," by Della Corte, Francesco Giuseppe , and Sandro Ra, IEEE Transactions on Electron Devices 60.5 (2013): 1495-1505 (hereinafter "Corte"), the entire contents of which are incorporated herein by reference for all purposes. In addition, low-temperature and low-loss PECVD SiNx have been demonstrated in literature such as the following: "Material and optical properties of low-temperature NH3-free PECVD SiNx layers for photonic applications," by Bucio, Thalía Domínguez, et al., Journal of Physics D: Applied Physics 50.2 (2016): 025106 (hereinafter "Bucio"), the entire contents of which are incorporated herein by reference for all purposes.

Consider the following exemplary structure: a SiNx layer with a thickness between about 200 nanometers (nm) and 400 nm that can be patterned and etched to form an O to C band lightguide. A silicon dioxide layer with a thickness of about 50nm to about 200nm is disposed under the SiNx optical guiding layer. An a-Si-H (or a-Si) layer with a thickness of about 150 nm to about 300 nm is disposed under the silicon dioxide layer. This a-Si-H (or a-Si) layer is another photoconductive layer and can be patterned and etched as described in Sacher. In certain embodiments, the a-Si-H (or a-Si) layer may be fabricated over the SiNx layer rather than under it as described above. It will be appreciated that the layers of the exemplary structures described above enable the polarization rotator-splitter to be fabricated in a BEOL interposer device flow, thereby making it compatible with high throughput and low cost interposer device fabrication goals.

Figure 20A shows a vertical cross-sectional block diagram of an interposer device 1801A as part of an MCM integrated product, according to some embodiments of the present invention. In the example of FIG. 20A, laser source 102, optical amplifier modules 303-1 to 303-N, and silicon photonics die/wafer 1803 are embedded in interposer device 1801A. This type of interfacing with interposer device 1801A enables light guides within interposer device 1081A to be integrated into each of laser source 102, optical amplifier modules 303-1 through 303-N, and silicon photonic die/chip 1803. Lightguide edge coupling, such as the situation discussed above with respect to Figure 5B. again, It should be appreciated that laser source 102, any of optical amplifier modules 303-1 through 303-N, and silicon photonics die/chip 1803 and interposer device 1801A may suitably include spot size converters. Whereas the placement accuracy of the die/die (e.g., laser source 102, optical amplifier modules 303-1 to 303-N, and silicon photonics die/die 1803) on interposer device 1801A can fall within about 1% of the target position. Within microns, converters containing point sizes can be useful.

Figure 20B shows another vertical cross-sectional block diagram of an interposer device 1801A as part of an MCM integrated product in accordance with certain embodiments of the present invention. In the example of FIG. 2OB, laser source 102, optical amplifier modules 303-1 to 303-N, and silicon photonics die/chip 1803 are disposed and mounted on the upper portion of interposer device 1801A. This top-mount interface with interposer device 1801A enables the light guide within interposer device 1801A to communicate with the laser source 102, optical amplifier modules 303-1 through 303-N, and silicon photonics die/chip 1803 each. The lightguides are coupled vertically, such as the situation discussed above with respect to Figure 3Y.

Figure 20C shows another vertical cross-sectional block diagram of an interposer device 1801A as part of an MCM integrated product in accordance with some embodiments of the present invention. In the example of FIG. 20C , optical amplifier modules 303-1 through 303-N are recessed into interposer device 1801A so that the light guides within interposer device 1801A can communicate with the light guides within optical amplifier modules 303-1 through 303-N. edge coupling. Also, in the example of FIG. 20C , silicon photonics die/chip 1803 is disposed above interposer device 1801A such that light guides within interposer device 1801A can be vertically coupled to light guides within silicon photonics die/chip 1803 . It should be appreciated that in various embodiments, the interposer device 1801A can be used to provide virtually any combination of edge coupling and vertical coupling between the light guide of the interposer device 1801A and the light guide of any die/wafer interfacing with the interposer device 1801A . Thus in some embodiments, as in the example of FIG. 20C , certain die/die(s) may be trapped in a configuration that interfaces with interposer device 1801A while certain die/die(s) die/wafer) can be mounted on a surface mount configuration with an interposer device 1801A Junction. Also, in some embodiments, the upper and lower surfaces of the interposer device 1801A may have one or more interface die/die(s) in a recess mount and/or surface mount arrangement.

Figure 21 shows an isometric view of the upper surface of an exemplary interposer device 1801B in accordance with certain embodiments of the present invention. The insert device 1801B includes a cavity/recess 2100 formed in its upper surface. A cavity/recess 2100 is formed to receive a die/wafer to enable the optical edge coupling of the die/wafer to the light guide within the interposer device 1801B. Each die/wafer can be substantially any type of die/wafer, including photonic die/wafer, electronic die/wafer, silicon photonic die/wafer, among others. When the lightguide within the die/wafer is edge-coupled to the corresponding lightguide within the interposer device 1801B, it is advantageous to place the lightguide within the die/wafer adjacent to the lightguide within the interposer device 1801B, where the proximity is It is believed to be less than about 10 microns along the axis of light propagation between the connecting lightguides. It will thus be appreciated that the cavity/recess 2100 is formed such that the sidewall(s) of the cavity/recess 2100 for edge coupling are in close proximity to the die/wafer when the die/wafer is placed within the cavity/recess 2100. An exemplary interposer device 1801B is shown including a light guide 2101 to illustrate that the light guide 2101 can have arbitrary routing paths within the interposer device 1801B and to illustrate that the light guide 2101 can be at more than one edge of a die/wafer(s) Optical connection to die/wafer (plurality of die/wafer). It should be understood that each cavity/recess 2100 can have any size, peripheral shape and depth as desired to accommodate receiving die/wafer. Also, each cavity/recess 2100 can have a uniform depth or a non-uniform depth, that is, multiple depths to accommodate receiving dies/wafers as required. Also, the example of FIG. 21 shows that in some embodiments, one or more of the cavities/recesses 2100 can be used as an epoxy reservoir with side protrusions (or pockets) 2103 as capillary underfill.

FIG. 22 shows the exemplary interposer device 1801B of FIG. 21 with a die/wafer 2201 within a cavity/recess 2100 in accordance with certain exemplary embodiments of the invention. FIG. 22 shows side protrusions 2103A on one side of die/wafer 2201 where cavity/recess 2100 is larger than die/wafer 2201 . Epoxy may be disposed within the side protrusions 2103A to create an epoxy reservoir. Epoxy is placed within the side protrusions 2103A to not completely cover the upper portion of the die/wafer 2201 . In some cases, Epoxy present on the upper portion of the die/wafer 2201 can cause adverse effects such as creating paths for higher thermal resistance and/or causing stress cracking. For example, if the epoxy is present on the upper portion of the die/wafer 2201 and a lid is placed over the die/wafer 2201, the epoxy can cause stress cracking. The epoxy present in the side protrusion 2103A has the function of filling the void between the die/die 2201 and the interposer device 1801B, including the void between the cavity/recess 2100 and the sidewall of the die/die 2201. This process is called capillary underfill. Figure 22 also shows how a particular die/wafer 2201 can be placed within a cavity/recess 2100 with two or more side protrusions 2103B. Also, FIG. 22 shows how a specific die/wafer 2201 can be placed within a cavity/recess 2100 with side protrusions 2103B of different shapes.

23A-23F illustrate an integrated mechanical transmission (MT) ferrule for connection to an inserter device 1801C, according to some embodiments of the invention. In certain embodiments, an MT ferrule may be used as the fiber-to-interposer connector 1903. The MT ferrule includes an upper half 2301 and a lower half 2303 . The upper half 2301 and lower half 2303 of the MT ferrule can be formed from silicon, glass, plastic or other materials that are chemically compatible with the surrounding/interface material and can provide the desired thermal and mechanical performance. The upper half 2301 and lower half 2303 of the MT ferrule may include one or more alignment keys 2305 to provide alignment and fit of the upper half 2301 and lower half 2303 . For example, in the exemplary MT ferrule of FIGS. 23A to 23F , the alignment keys 2305 on the upper half 2301 protrude outwardly from the upper half 2301 and have complementary, i.e. conformal, alignment keys 2305 to the lower half 2303. According to the matching shape, the alignment key 2305 is formed in the lower half 2303 in the form of a cavity/recess. In various embodiments, the alignment key 2305 may have various cross-sections such as triangular, rectangular, circular, or other shapes. The upper half 2301 of the MT ferrule also includes one or more partial holes 2307 and the lower half 2303 of the MT ferrule also includes one or more partial holes 2309 . Partial holes 2307 and 2309 together form alignment holes to provide alignment between the integral MT ferrule and another anastomotic MT ferrule or another matingly formed connector structure/means. In some embodiments, after forming the insert device 1801C to accommodate the integrated MT sleeve After installation of the collar, the configuration of one or more tabs 2311 of the insert device 1801C remains unchanged. In some embodiments, one or more tabs 2311 disappear.

As shown in Figure 23B, upper half 2301 and lower half 2303 are mounted to insert device 1801C to form an integrated MT ferrule. In various embodiments, the upper half 2301 and the lower half 2303 may be mounted to the interposer device 1801C using epoxy, glue, solder, or any other suitable adhesive. After the upper half 2301 and lower half 2303 of the MT ferrule are mounted to the insert device 1801C to form an integrated MT ferrule, the integrated MT ferrule has the ability to integrate with other adapter structures/devices such as standard MT ferrules. The circles match the structure. It should be understood, however, that the configuration of the integrated MT ferrule may be mated with virtually any other form of mating connector structure/device, not limited to use with standard MT ferrules. The interposer device 1801C includes a plurality of light guides 2313 extending to the edge of the interposer device 1801C at a location between the upper half 2301 and the lower half 2303 of the integrated MT ferrule. In certain embodiments, light guides 2313 are arranged according to the same pitch as the fiber optic sockets in the connector structure/device that fits into the integrated MT ferrule, such as the pitch of the fiber optic sockets in a standard MT ferrule. In certain embodiments, the edges of the interposer device 1801C at the light guide locations may be polished. Also, in some embodiments, the interposer device 1801C may include one or more spot-sized transducers to work with the integrated MT ferrule to improve optical coupling. For example, in some embodiments, such spot size converters may be configured as chamfers of light guides.

Figure 24 shows an exemplary vertical cross-section through laser source 102 according to some embodiments of the present invention. However, it should be understood that the principles described with reference to FIG. 24 can be applied to other electronic and/or photonic devices such as the optical amplification module 303 . For purposes of discussion, the cross-section of FIG. 24 shows a plurality of lasers 103-1 through 103-N. However, it should be understood that in the case of other electronic and/or photonic devices, the complex lasers 103-1 to 103-N may be other elements. For example, if the cross-section in FIG. 24 is the cross-section of the optical amplification module 303 rather than the cross-section of the laser source 102, then the complex optical amplifiers 305-1 to 305-M can replace the complex lasers 103-1 to 103-N . The vertical cross-section of FIG. 24 shows a substrate 1021 of an electronic and/or photonic device such as a laser source 102 . In some embodiments, the substrate 1021 is formed of InP.

For III-V photonic devices, features can be defined using the (z-direction) epitaxial growth of various epitaxial layers. Since the functionality of the device depends on the properties of the epitaxial layer, such as composition and thickness, the formation of the epitaxial layer is extremely well controlled. The vertical cross-section of FIG. 24 shows three exemplary epitaxial layers 1022 , 1023 and 1024 . In some embodiments, the epitaxial layer 1022 is a first photonic layer formed by epitaxial growth. In some embodiments, epitaxial layer 1022 is an N-type portion of a PIN diode. It should be understood that PIN diodes are components of Distributed Feedback Lasers (DFB) and Semiconductor Optical Amplifiers (SOA). In some embodiments, the epitaxial layer 1023 is a second photonic layer formed by epitaxial growth. In some embodiments, the epitaxial layer 1023 is an essential part of the PIN diode. In some embodiments, the epitaxial layer 1024 is a third photonic layer formed by epitaxial growth. In some embodiments, epitaxial layer 1024 is the p-type portion of a PIN diode.

The vertical cross-section of FIG. 24 also shows the planarization layer 1025 . In various embodiments, planarization layer 1025 may be formed from benzocyclobutene (BCB), or spin-on-dielectric (SOD), or one or more other materials used in semiconductor manufacturing to form planarization layers . In some embodiments, the material of the planarization layer 1025 is spin-coated on the wafer/substrate. Depending on the topography of the features beneath the planarization layer 1025 material being deposited, the process of spin coating the planarization layer 1025 material onto the wafer/substrate can result in the formation of peaks and valleys. These peaks and valleys cause variations in the thickness of the planarization layer 1025 across the wafer/substrate. Also, the variation in the thickness of the planarizing layer 1025 may be a function of radial position across the wafer/substrate such as the variation in the thickness of the planarizing layer 1025 from the center to the edge of the wafer/substrate.

The vertical cross-section of Figure 24 also shows the conductive interconnect structure 1026 of the device. In certain exemplary embodiments, conductive interconnect structures of III-V devices such as 1026 may be formed of one or more of Au, Ag, W, Ni, and other metals/alloys. In the example of FIG. 24, conductive interconnect structure 1026 flip chip connects laser source 102 to the interposer device. For example, conductive interconnect structures 1026 may be soldered to corresponding conductive structures on the interposer device.

25 shows a vertical cross-sectional view of FIG. 24 after etching planarization layer 1025 to reveal portion 1027 of epitaxial layer 1024 (third photonic layer), according to some embodiments of the present invention. The revealed portion 1027 of the epitaxial layer 1024 functions as a "bonding shoulder". After etching the planarization layer 1025 to reveal the portion 1027, the z-direction position of the upper surface of the revealed portion 1027 of the epitaxial layer 1024 is the same as when the epitaxial layer 1024 has completed epitaxial growth. Since the epitaxial growth of epitaxial layer 1024 is well controlled in the z-direction (much more control than the z-direction thickness of planarization layer 1025), the developed portion 1027 of epitaxial layer 1024 provides A reference structure for precise and better z-direction control of flip-chip operations. Also, it should be noted that the light guide formed on the laser source 102 can be formed from the epitaxial layers 1022 , 1023 and 1024 . Thus, using the revealed portion 1027 of the epitaxial layer 1024 as a reference structure for z-direction control in flip-chip attach operations results in a more reliable optical coupling between the light guide of the laser source 102 and the light guide of the interposer device.

FIG. 26 shows a vertical cross-sectional view of the laser source 102 of FIG. 25 flip-chip connected to an interposer device 2601 in accordance with certain embodiments of the present invention. In the example of FIG. 26 , as shown at location 2603 , the revealed portion 1027 of epitaxial layer 1024 is bonded to the nitride etch stop layer within the socket/cavity of interposer device 2601 . In the example of FIG. 26, the interposer device 2601 is a silicon interposer. The nitride stop layer and remaining interlayer dielectric (ILD) layer of interposer device 2601 may be formed by wafer level deposition techniques such as, inter alia, chemical vapor deposition (CVD) and/or atomic layer deposition (ALD). Thus, the precision of the nitride etch stop layer and other ILD layers within the interposer device 2601 can be well defined and well controlled. This enables good control of the z-direction alignment between the laser source 102 and the interposer device 2601 .

In certain embodiments, the disclosed interposer devices 1801/1801A/1801B/1801C include a substrate. The substrate includes a laser source chip interface area for receiving the laser source chip 102 . The substrate also includes a silicon photonics chip interface region for receiving the silicon photonics chip 1803 . The substrate also includes the optical amplifier module interface area for receiving the optical amplifier modules 303-1-303-N. A fiber-to-interposer connection area is formed in the substrate to contain the connections 1903 of the fiber-to-interposer. The first group of light transmission structures is formed in the substrate to connect the laser source chip 102 when the laser source chip 102 and the silicon photonic chip 1803 are interfaced with the substrate. Optically connected to the silicon photonics chip 1803 . A second set of optical transmission structures is formed in the substrate to optically connect the silicon photonics die 1803 to the optical amplifier module 303-1-303-N when the silicon photonics die 1803 and the optical amplifier module 303-1-303-N interface with the substrate -N. A third set of optical transmission structures is formed in the substrate to optically connect the optical amplifier modules 303-1-303-N to the fiber pair interposer connection area when the optical amplifier modules 303-1-303-N interface with the substrate .

In some embodiments, the first set of light-transmitting structures includes light-organizing modules formed within the substrate. The optical programming module is used to receive a plurality of laser beams with different wavelengths from the laser source chip 102, combine the plurality of laser beams into a multi-wavelength laser source, and transmit a part of the multi-wavelength laser source to silicon photonics Each of the plurality of locations at the wafer interface region is aligned with the corresponding plurality of laser light input ports of the silicon photonics wafer 1803 when the silicon photonics wafer 1803 is interfaced with the substrate. In some embodiments, the optical programming module includes an Nx1 phase maintaining wavelength combiner 701 with an optical output optically connected to an optical input of a 1xM phase maintaining broadband power divider 705, where N is the number of complex laser beams and M is The number of the plurality of positions at the interface region of the silicon photonics chip, the plurality of positions at the interface region of the silicon photonics chip are aligned with the light input ports of the corresponding plurality of laser lights of the silicon photonics chip 1803 . In some embodiments, the optical programming module includes an arrayed waveguide 801 having a plurality of optical inputs for receiving a plurality of laser beams and an optical output optically connected to a broadband power splitter 805 light input. Broadband power divider 805 has a plurality of optical outputs for transmitting light to the plurality of locations at the interface region of the silicon photonics die that correspond to the plurality of locations at the interface region of the silicon photonics die 1803 Align the light input port of the laser light.

In some embodiments, the optical programming module includes an echelle grating 901 having a plurality of optical inputs for receiving a plurality of laser beams. Echelle grating 901 has an optical output optically connected to the optical input of broadband power divider 905 . The broadband power splitter 905 has a plurality of optical outputs for transmitting light to a plurality of locations at the interface region of the silicon photonics chip that correspond to the plurality of light sources at the interface region of the silicon photonics chip 1803. Align the light input port of the light emitting light. In some embodiments, The optical programming module includes a butterfly waveguide network 1001 with multiple optical inputs and multiple optical outputs. The multiple optical inputs are used to receive multiple laser beams and the multiple optical outputs are used to transmit light to the interface area of the silicon photonic chip. The plurality of positions, the plurality of positions at the interface region of the silicon photonics chip are aligned with the light input ports of the corresponding plurality of laser lights of the silicon photonics chip 1803 . In some embodiments, the optical programming module includes a star coupler 1101 with a plurality of optical inputs for receiving the plurality of laser beams and a plurality of optical outputs for transmitting the light to the silicon The plurality of positions at the interface area of the photonic chip, the plurality of positions at the interface area of the silicon photonic chip are aligned with the corresponding plurality of laser light input interfaces of the silicon photonic chip 1803 . In some embodiments, the optical programming module includes a resonant ring array 1201 with a plurality of optical inputs for receiving a plurality of laser beams and a plurality of optical outputs for transmitting light to silicon photonics The plurality of positions at the interface area of the wafer, the plurality of positions at the interface area of the silicon photonics wafer are aligned with the light input ports of the corresponding plurality of laser lights of the silicon photonics wafer 1803 .

In some embodiments, interposer devices 1801/1801A/1801B/1801C include local metal routing structures and conductive via structures formed in the substrate to provide a connection between the silicon photonics die 1803 and another electronic device interfacing with the substrate. electrical connection. In some embodiments, the silicon photonics chip interface region is used to flip-chip connect conductive structures in the silicon photonics chip 1803 to corresponding conductive structures in the substrate. In some embodiments, the silicon photonics chip interface region is used to wire-bond conductive structures in the silicon photonics chip 1803 to corresponding conductive structures in the substrate. In some embodiments, the silicon photonics die interface region is used to edge-couple the first set of light-transmitting structures to corresponding light inputs of the silicon photonics die 1803 when the silicon photonics die 1803 interfaces with the substrate. Also, the silicon photonics chip interface region is used to edge-couple the second set of light transmission structures to the corresponding light output of the silicon photonics chip 1803 when the silicon photonics chip is interfaced with the substrate. In some embodiments, the silicon photonics die interface region is used to vertically couple the first set of light transmissive structures to corresponding light inputs of the silicon photonics die 1803 when the silicon photonics die 1803 interfaces with the substrate. Also, the silicon photonics chip interface region is used to vertically couple the second set of light transmission structures to the corresponding light output of the silicon photonics chip 1803 when the silicon photonics chip 1803 is interfaced with the substrate.

In some embodiments, the optical amplifier module interface region is used to edge-couple the second set of optical transmission structures to the optical amplifier module 303-1 when the optical amplifier modules 303-1-303-N interface with the substrate - Corresponding optical input and/or output of 303-N. In addition, the interface area of the optical amplifier module is used to couple the edge of the third group of optical transmission structures to the optical amplifier module 303-1-303-N when the optical amplifier module 303-1-303-N is at the interface with the substrate Corresponding light output and/or input. In some embodiments, the optical amplifier module interface region is used to vertically couple the second set of optical transmission structures to the optical amplifier module 303-1 when the optical amplifier modules 303-1-303-N interface with the substrate - Corresponding optical input and/or output of 303-N. In addition, the optical amplifier module interface area is used to vertically couple the third group of optical transmission structures to the optical amplifier module 303-1-303-N when the optical amplifier module 303-1-303-N is at the interface with the substrate Corresponding light output and/or input.

In some embodiments, the substrate is formed from one or more of silicon, glass, ceramics, epoxy composites, and polymers. In some embodiments, the first group of light-transmitting structures is formed of one or more of silicon, oxide, polymer, and silicon nitride, and the second group of light-transmitting structures is formed of silicon, oxide, polymer and one or more of silicon nitride. The third group of light transmission structures is formed of one or more of silicon, oxide, polymer and silicon nitride. In some embodiments, the substrate includes a plurality of optical amplifier module interface regions for receiving optical amplifier modules 303-1-303-N. In addition, the second group of optical transmission structures is used to optically connect the silicon photonic chip 1803 to the complex optical amplifier module 303-1 when the silicon photonic chip 1803 and the complex optical amplifier modules 303-1-303-N are at the junction of the substrate -303-N. Also, the third group of optical transmission structures is used to optically connect the plurality of optical amplifier modules 303-1-303-N to the area of the connector 1903 of the optical fiber pair insert.

In some embodiments, the interface region of the laser source chip, the interface region of the silicon photonics chip and the interface region of the optical amplifier module are disposed in the substrate in a substantially symmetrical configuration. In some embodiments, the interface region of the laser source chip, the interface region of the silicon photonics chip and the interface region of the optical amplifier module are arranged in the substrate in an asymmetric configuration. In some embodiments, the interposer device is integrated into an MCM product.

In some embodiments a multi-chip module (MCM) comprising interposer devices 1801/1801A/1801B/1801C is disclosed. The MCM also includes a laser source chip 102 connected to interposer devices 1801/1801A/1801B/1801C. The MCM also includes a silicon photonics die 1803 connected to interposer devices 1801/1801A/1801B/1801C. In some embodiments, silicon photonics die 1803 is a CMOS driver die for interacting with silicon photonics devices formed in interposer devices 1801/1801A/1801B/1801C. The MCM also includes optical amplifier modules 303-1-303-N connected to interposer devices 1801/1801A/1801B/1801C. The interposer device 1801/1801A/1801B/1801C includes a first set of optical transmission structures (such as light guides 1905, 1907 and/or optical programming modules) for optically connecting the laser source chip 102 to the silicon photonics chip 1803. The interposer device 1801/1801A/1801B/1801C also includes a second set of optical transmission structures (such as light guides 1909-1-1909-N) for optically connecting the silicon photonics chip 1803 to the optical amplifier modules 303-1-303-N ). The interposer assembly 1801/1801A/1801B/1801C also includes connectors for optically connecting the optical amplifier modules 303-1-303-N to the fiber-to-interposer formed within the interposer assembly 1801/1801A/1801B/1801C A third set of light transmission structures in area 1903 (eg light guides 1915-1 - 1915-N, 1911, 1913 and/or polarization rotator 1901). The fiber-to-interposer connector 1903 is used to couple the core optical fibers of the plurality of optical fibers to the corresponding optical fibers of the third set of optical transmission structures. In certain embodiments, the mechanical transmission ferrule 2301/2303 is connected to the inserter device 1801/1801A/1801B/1801C. The mechanical transmission ferrules 2301/2303 are used to frame and index the fiber-to-interposer connector 1903 area for the plurality of fibers.

In some embodiments, the laser source chip 102 is connected to the interposer device 1801/1801A/1801B/1801C by a flip chip connection or a wire bonding connection. In some embodiments, the laser source chip 102 is used to generate and output a plurality of laser beams with different wavelengths. In some embodiments, the first set of optical transmission structures includes an optical programming module for receiving a plurality of laser beams from the laser source chip 102 and combining the plurality of laser beams into a multi-wavelength laser The light source transmits a part of the multi-wavelength laser light source to each of the light input ports of the plurality of laser light of the silicon photonics chip 1803 . in some implementations In this example, the optical programming module includes an Nx1 phase-maintaining wavelength combiner 701 with an optical output connected to the optical input of a 1xM phase-maintaining broadband power divider 705, where N is the number of complex laser beams and M is the silicon The number of light input ports of the plurality of laser lights of the photonic chip 1803. In some embodiments, the optical programming module includes an arrayed waveguide 801 having a plurality of optical inputs for receiving a plurality of laser beams and having an optical output optically connected to the optical input of a broadband power splitter 805 . The broadband power divider 805 has a plurality of light outputs for transmitting light to the light input port of the plurality of laser lights of the silicon photonics chip 1803 .

In some embodiments, the optical programming module includes an echelle grating 901 having a plurality of optical inputs for receiving a plurality of laser beams and having an optical output optically connected to the optical input of the broadband power splitter 905 . The broadband power splitter 905 has a plurality of light outputs for transmitting light to the light input ports of the plurality of laser lights of the silicon photonics chip 1803 . In some embodiments, the optical programming module includes a butterfly waveguide network 1001 having a plurality of optical inputs for receiving a plurality of laser beams and having a light transmission to a silicon photonic chip 1803 The complex light output of the light input port of the complex laser light. In some embodiments, the optical programming module includes a star coupler 1101 having a plurality of optical inputs for receiving a plurality of laser beams and having a plurality of optical inputs for transmitting light to a silicon photonics chip 1803 Multiple light output from the light input port of the laser light. In some embodiments, the optical programming module includes a resonant ring array having a plurality of optical inputs for receiving a plurality of laser beams and having a light of the plurality of laser beams for transmitting light to the silicon photonics chip 1803 Multiple optical outputs from the input port.

In some embodiments, optical amplifier modules 303-1-303-N are connected to interposer devices 1801/1801A/1801B/1801C by flip chip connections or wire bond connections. In some embodiments, the optical amplifier module 303-1-303-N includes a plurality of optical amplifiers 305-1-305-M, so that each optical signal for data reception is received by the optical amplifier 305-1-305- A corresponding one of M is amplified so that each optical signal for data transmission is amplified by a corresponding one of optical amplifiers 305-1-305-M. In some embodiments, The interposer devices 1801/1801A/1801B/1801C include integrated optical isolators to optically isolate the light guides from each other. In certain embodiments, the MCM includes a polarization rotator 1901 for receiving input light from the region of the fiber-to-interposer connector 1903 and splitting both the TE and TM polarizations of the input light into TE polarization. The polarization rotator 1901 is optically connected to two corresponding light guides 1913 for guiding the light from the polarization rotator 1901 to the optical amplifier modules 303-1-303-N. In certain embodiments, the polarization rotator 1901 is a discrete element that interfaces with the interposer device 1801/1801A/1801B/1801C. In certain embodiments, the polarization rotator 1901 is formed within the interposer device 1801/1801A/1801B/1801C.

In certain embodiments, the interposer device 1801/1801A/1801B/1801C includes a recessed region in which the laser source wafer 102 is disposed such that the optical edges of the light guides within the laser source wafer 102 are coupled to the interposer device 1801 Corresponding light guides within the first set of light transmission structures within /1801A/1801B/1801C. In some embodiments, the light guides within laser source wafer 102 are disposed within 10 microns of corresponding light guides within the first set of light transmissive structures within interposer device 1801/1801A/1801B/1801C. In some embodiments, the recessed region includes side protrusions that form reservoirs for underfill material (eg, epoxy) to enable capillary underfill of the laser source wafer 102 . In some embodiments, the laser source wafer 102 is disposed on the outer surface of the interposer device 1801/1801A/1801B/1801C such that the light guides within the laser source wafer 102 are vertically coupled to the interposer device 1801/1801A/ Corresponding light guides of the first set of light transmission structures within 1801B/1801C.

In some embodiments, the interposer device includes a recessed region in which the photonic die 1803 is disposed such that the optical edge of the light guide within the photonic die 1803 is coupled to the first 1801/1801A/1801B/1801C formed within the interposer device 1801/1801A/1801B/1801C. One set of light transmissive structures and corresponding light guides within the second set of light transmissive structures. In some embodiments, the recessed region includes side protrusions that form reservoirs for underfill material (eg, epoxy) to enable capillary underfill of the silicon photonics wafer 1803 . In some embodiments, the light guide within the silicon photonics die 1803 is disposed on the first One set of light-transmitting structures is within 10 microns of a corresponding lightguide within a second set of light-transmitting structures. In some embodiments, the outer surface of the silicon photonics wafer 1803 interposer device 1801/1801A/1801B/1801C is such that the light guide system within the silicon photonics wafer 1803 is vertically coupled to the light guide system formed in the interposer device 1801/1801A/1801B/1801C. The first set of light transmission structures within and the corresponding light guides within the second set of light transmission structures.

In some embodiments, the interposer device 1801/1801A/1801B/1801C includes a recessed area in which the optical amplifier modules 303-1-303-N are disposed such that the optical amplifier modules 303-1-303- The lightguides within N are optically edge coupled to corresponding lightguides within the second and third sets of light transmitting structures formed within the interposer device 1801/1801A/1801B/1801C. In some embodiments, the recessed region includes side protrusions that form reservoirs for underfill material (eg, epoxy) to enable capillary underfill of the optical amplifier modules 303-1-303-N. In some embodiments, the light guides in the optical amplifier modules 303-1-303-N are located in the second set of light transmission structures and the third set of light transmission structures formed in the interposer devices 1801/1801A/1801B/1801C within 10 µm of the corresponding light guide. In some embodiments, the optical amplifier modules 303-1-303-N are disposed on the outer surface of the interposer device 1801/1801A/1801B/1801C such that the optical amplifier modules 303-1-303-N The light guides are vertically coupled to corresponding light guides in the second and third sets of light transmitting structures formed within the interposer device 1801/1801A/1801B/1801C.

In certain embodiments, a mechanical transmission (MT) ferrule is disclosed. The MT ferrule comprises an upper half (2301) with an upper alignment key (2305). The MT ferrule also includes a lower half (2303) with a lower alignment key (2305). The upper and lower alignment keys (2305) are adapted to fit each other to provide alignment and fit of the upper half (2301) and lower half (2303). Each of the upper half (2301) and lower half (2303) is adapted to receive the outer shell of the insert device 1801/1801A/1801B/1801C between the upper half (2301) and the lower half (2303). rim so that the light guide exposed at the edge of the outer rim of the interposer device 1801/1801A/1801B/1801C is in the upper half (2301) when the upper half (2301) is fitted to the lower half (2303). ) and a position between the lower member (2303) is exposed. In some embodiments, The upper half component (2301) and the lower half component (2303) are formed by silicon, glass or plastic. In some embodiments, the upper half (2301) includes at least one upper hole (2307) and the lower half (2303) includes at least a lower hole (2309). At least one upper portion hole (2307) and at least one lower portion hole (2309) for fitting the upper half member (2301) to the lower half member (2303) and outside the insert device (1801/1801A/1801B/1801C) The rims when interposed between the upper half (2301) and the lower half (2303) respectively form at least one fully aligned hole (see FIG. 23F). At least one alignment hole is used to provide alignment of the MT ferrule with another connector structure.

FIG. 27 shows a flowchart of a method of manufacturing a multi-chip module (MCM) according to some embodiments of the present invention. The method includes an operation 2701, providing an inserter device (1801/1801A/1801B/1801C). The method also includes operation 2703, connecting the laser source chip (102) to the interposer device (1801/1801A/1801B/1801C). The method also includes operation 2705, connecting the silicon photonics chip (1803) to the interposer device (1801/1801A/1801B/1801C). The method also includes 2707, connecting the optical amplifier module (303-1-303-N) to the interposer device (1801/1801A/1801B/1801C). The interposer device (1801/1801A/1801B/1801C) includes a first set of optical transmission structures for optically connecting the laser source chip (102) to the silicon photonics chip (1803). The interposer device (1801/1801A/1801B/1801C) includes a second set of optical transmission structures for optically connecting the silicon photonics chip (1803) to the optical amplifier modules (303-1-303-N). The interposer device (1801/1801A/1801B/1801C) includes a third group of optical transmission structures, and the third group of optical transmission structures is used to form the optical connection of the optical amplifier module (303-1-303-N) in the interposer device Fiber pair insert connection (1903) area within (1801/1801A/1801B/1801C). In some embodiments, the method includes connecting the mechanical transmission ferrule (2301/2303) to the inserter device (1801/1801A/1801B/1801C) such that the mechanical transmission ferrule (2301/2303) forms a fiber pair for insertion The operation of framing the connector (1903) area of the insert and indexing the fiber to the connector (1903) area of the insert to connect to a plurality of optical fibers.

In some embodiments, a method includes forming local metal routing structures and conductive via structures within an interposer device (1801/1801A/1801B/1801C) for silicon photonics An electrical connection is provided between the chip (1803) and another electronic device interfacing with the interposer device (1801/1801A/1801B/1801C). In some embodiments, the laser source chip (102) is connected to the interposer device (1801/1801A/1801B/1801C) by a flip chip connection or a wire bonding connection. In some embodiments, the silicon photonics die (1803) is connected to the interposer device (1801/1801A/1801B/1801C) by a flip chip connection or a wire bonding connection. In some embodiments, optical amplifier modules (303-1-303-N) are connected to interposer devices (1801/1801A/1801B/1801C) by flip chip connections or wire bonding connections.

In some embodiments, the method includes forming a first set of optical transmission structures to include an optical programming module for receiving a plurality of laser beams from a laser source wafer (102), combining the plurality of laser beams Becoming a multi-wavelength laser light source and transmitting a part of the multi-wavelength laser light source to each of the light input ports of the plurality of laser lights of the silicon photonics chip (1803). In certain embodiments, the method includes forming an integrated light isolator within the interposer device (1801/1801A/1801B/1801C) to isolate lightguides within the interposer device (1801/1801A/1801B/1801C) from each other. In some embodiments, the method includes optically connecting a polarization rotator (1901) between a connector (1903) region of an optical fiber pair interposer and an optical amplifier module (303-1-303-N). A polarization rotator (1901) is used to receive light input from the fiber-to-interposer connection (1903) area and split both TE and TM polarizations of the input light into TE polarizations. The polarization rotator (1901) is optically connected to two corresponding light guides (1913), and the light guide (1913) is used to guide the light from the polarization rotator (1901) to the optical amplifier module (303-1-303 -N). In certain embodiments, the polarization rotator (1901 ) is a discrete element that interfaces with the interposer device (1801/1801A/1801B/1801C). In certain embodiments, the polarization rotator (1901 ) is formed within the interposer device (1801/1801A/1801B/1801C).

In some embodiments, a method includes forming a recessed region within an interposer device (1801/1801A/1801B/1801C) to receive a laser source wafer (102). In some embodiments, the recessed regions are used to couple the optical edges of the lightguides in the laser source wafer (102) to corresponding lightguides in the first set of light transmissive structures. In some embodiments, attaching the laser source die (102) to the interposer device (1801/1801A/1801B/1801C) includes disposing the laser source die (102) on an interposer device formed on Within 10 microns of the corresponding light guide within the first set of light transmission structures within (1801/1801A/1801B/1801C). In some embodiments, the recessed region is formed to include side protrusions that form reservoirs for underfill material (eg, epoxy) to enable capillary underfill of the laser source wafer (102). In some embodiments, attaching the laser source die (102) to the interposer device (1801/1801A/1801B/1801C) comprises disposing the laser source die (102) in the interposer device (1801/1801A/1801B/ 1801C) on the outer surface so that the light guides in the laser source wafer (102) are vertically coupled to the corresponding light guides of the first set of light transmission structures.

In some embodiments, the method includes forming a recessed region within an interposer device (1801/1801A/1801B/1801C) to receive a silicon photonics die (1803). In some embodiments, the recessed region is used to couple the optical edge of the light guide in the silicon photonics wafer (1803) to the first set of light-transmitting structures and the second Corresponding light guides within the two sets of light transmission structures. In some embodiments, connecting the silicon photonics die (1803) to the interposer device (1801/1801A/1801B/1801C) includes disposing the silicon photonics die (102) on the interposer device (1801/1801A/1801B/ 1801C) within 10 microns of the first set of light-transmitting structures and the corresponding lightguides within the second set of light-transmitting structures. In some embodiments, the recessed region is formed to include side protrusions that form reservoirs for underfill material (eg, epoxy) to enable capillary underfill of the silicon photonics wafer (1803). In some embodiments, connecting the silicon photonics die (1803) to the interposer device (1801/1801A/1801B/1801C) includes disposing the silicon photonics die (1803) on the interposer device (1801/1801A/1801B/1801C) so that the light guide system in the silicon photonics chip (1803) is vertically coupled to the first set of light-transmitting structures and the second set of light-transmitting structures formed in the interposer device (1801/1801A/1801B/1801C) corresponding to the light guide.

In some embodiments, the method includes forming a recessed region within an interposer device (1801/1801A/1801B/1801C) to receive an optical amplifier module (303-1-303-N). In some embodiments, the recessed region is used to couple the optical edge of the light guide within the optical amplifier module (303-1-303-N) to the first optical edge formed within the interposer device (1801/1801A/1801B/1801C). Two sets of light transmission structure Corresponding light guides within the third set of light transmitting structures. In some embodiments, connecting the optical amplifier module (303-1-303-N) to the interposer device (1801/1801A/1801B/1801C) comprises connecting the optical amplifier module (303-1-303-N) The second set of light-transmitting structures and the third set of light-transmitting structures disposed within 10 microns of corresponding lightguides within the interposer device (1801/1801A/1801B/1801C). In some embodiments, the recessed region is formed to include side protrusions that form reservoirs for underfill material (eg, epoxy) to enable the capillary Underfill. In some embodiments, connecting the optical amplifier module (303-1-303-N) to the interposer device (1801/1801A/1801B/1801C) comprises connecting the optical amplifier module (303-1-303-N) Provided on the outer surface of the interposer device (1801/1801A/1801B/1801C) so that the light guide system in the optical amplifier module (303-1-303-N) is vertically coupled to the interposer device (1801/1801A/ 1801B/1801C) of the second set of light-transmitting structures and corresponding lightguides in the third set of light-transmitting structures.

The foregoing embodiments are provided for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but can be applied, interchanged, and used in other selected embodiments even if not specifically shown or described herein. It can also be varied in many ways. Such variations are not to be regarded as a departure from the invention and all such modifications are intended to be included within the scope of the invention.

While the invention has been described in detail to provide a thorough understanding, it should be understood that certain changes and modifications can be practiced. Accordingly, the embodiments of the invention should be considered as illustrative rather than restrictive and the invention should not be limited to the specific details provided herein but modifications can be made within the scope and equivalents of the embodiments of the invention.

2701‧‧‧operation

2703‧‧‧operation

2705‧‧‧operation

2707‧‧‧Operation

Claims (28)

An interposer device, comprising: a substrate, the substrate includes a laser source chip interface area for accommodating a laser source chip, the substrate includes a silicon photonic chip interface area for accommodating a silicon photonic chip, the substrate Including an optical amplifier module interface area for accommodating an optical amplifier module; a fiber-to-interposer connection area formed in the substrate; a first group of light transmission structures formed in the substrate for the laser The source chip and the silicon photonic chip are optically connected to the silicon photonic chip when the source chip and the silicon photonic chip are connected to the substrate; a second group of light transmission structures is formed in the substrate to connect the silicon photonic chip and the optical amplifier optically connecting the silicon photonics chip to the optical amplifier module when the module interfaces with the substrate; and a third set of optical transmission structures formed in the substrate to connect The optical amplifier module is optically connected to the fiber pair interposer connection area. Such as the interposer device of claim 1, wherein the first group of optical transmission structures includes an optical programming module formed in the substrate, and the optical programming module is used to receive different laser beams from the laser source chip. multiple wavelengths of laser beams, combine the multiple laser beams into a multi-wavelength laser source, and transmit a portion of the multi-wavelength laser source to each of the plurality of locations in the silicon photonics wafer interface region, at The plurality of positions of the interface region of the silicon photonic chip are aligned with the light input ports of the corresponding plurality of laser lights of the silicon photonic chip when the silicon photonic chip is interfaced with the substrate. Such as the insert device of claim 2, wherein the optical programming module includes an Nx1 phase-maintaining wavelength combiner, and the Nx1 phase-maintaining wavelength combiner has an optical output, and the optical output is optically connected to a 1xM phase-maintaining broadband an optical input of a power splitter, where N is a number of the plurality of laser beams and M is the plurality of positions of the silicon photonics wafer interface region aligned with the optical input port of the corresponding plurality of laser beams of the silicon photonics wafer Number of. Such as the insert device of item 2 of the scope of the patent application, wherein the optical arrangement module includes a star coupler, the star coupler has a plurality of optical inputs for receiving the plurality of laser beams, and the star coupler has a plurality of Light outputs for transmitting light to the plurality of locations of the silicon photonics wafer interface region aligned with the corresponding plurality of laser beam light input ports of the silicon photonics wafer. For example, the interposer device of item 1 of the scope of the patent application further includes: a plurality of local metal line structures and a plurality of conductive via structures formed in the substrate so as to be between the silicon photonic chip and another electronic device bordering the substrate Provides electrical connection. For example, the interposer device of item 1 of the scope of the patent application, wherein the interface region of the silicon photonic chip is used for flip-chip connection of the conductive structure in the silicon photonic chip to the corresponding conductive structure in the substrate. The interposer device of claim 1, wherein the silicon photonic chip interface region is used to edge-couple the first group of light transmission structures to the silicon photonic chip when the silicon photonic chip is at the interface with the substrate Corresponding to light input, and wherein the silicon photonic chip interface region is used to edge-couple the second set of light transmission structures to the corresponding light output of the silicon photonic chip when the silicon photonic chip is interfaced with the substrate. For example, the interposer device of claim 1, wherein the substrate is formed of one or more of silicon, glass, ceramics, epoxy composites, and polymers. Such as the interposer device of claim 1 of the patent scope, wherein the interposer device is integrated into a multi-chip module integration product. For example, the insert device of item 1 of the patent scope of the application further includes: a mechanical transmission ferrule including an upper half member and a lower half member, the upper half member includes an upper alignment key, and the lower half member includes the following alignment key, wherein the upper alignment key and the lower alignment key are adapted to fit together to provide alignment and fit for the upper half and the lower half, wherein each of the upper half and the lower half one for receiving an outer edge of the base plate between the upper half and the lower half so that when the upper half is fitted to the lower half, the outer edge of the base A light guide exposed at one of the edges of the rim is exposed at a location between the upper half and the lower half. For example, the insert device of claim 10, wherein the upper half member and the lower half member are formed of silicon, glass or plastic. The insert device of claim 10, wherein the upper half member includes at least one upper hole and the lower half member includes at least a lower hole, wherein the at least one upper hole and the at least lower hole are used for At least one fully aligned hole is respectively formed when the upper half and the lower half are fitted and the outer edge of the base plate is interposed between the upper half and the lower half, wherein the at least one alignment Holes are used to provide alignment of the mechanical transmission ferrule with another connector structure. A multi-chip module comprising: an interposer device; a laser source chip connected to the interposer device; a silicon photonics chip connected to the interposer device; and an optical amplifier module connected to the interposer device, wherein the interposer device includes a first set of optical transmission structures for optically connecting the laser source chip to the silicon photonics chip, wherein the interposer device includes a second A set of optical transmission structures, the second set of optical transmission structures is used to optically connect the silicon photonic chip to the optical amplifier module, and wherein the interposer device includes a third set of optical transmission structures, the third set of optical transmission structures The transmission structure is used to optically connect the optical amplifier module to a fiber-to-interposer connection area formed in the interposer device. For example, the multi-chip module of item 13 of the scope of the patent application further includes: a mechanical transmission ferrule connected to the interposer device, the mechanical transmission ferrule is used to form a frame for the connection area of the optical fiber to the interposer and connect the The fiber-to-interposer connection area is indexed for a plurality of fibers. Such as the multi-chip module of item 13 of the scope of the patent application, wherein the laser source chip is used to generate and output a plurality of laser beams with different wavelengths. Such as the multi-chip module of item 15 of the scope of the patent application, wherein the first group of optical transmission structures includes an optical arrangement module, and the optical arrangement module is used to receive a plurality of laser beams from the laser source chip, and the The plurality of laser beams are combined into a multi-wavelength laser light source, and part of the multi-wavelength laser light source is transmitted to each of the plurality of laser light input ports of the silicon photonics chip. Such as the multi-chip module of item 16 of the scope of the patent application, wherein the optical programming module includes an Nx1 phase maintaining wavelength combiner, and the Nx1 phase maintaining wavelength combiner has an optical output, and the optical output is optically connected to a 1xM phase maintaining An optical input of the broadband power divider, wherein N is a number of the plurality of laser beams and M is the number of optical input ports of the plurality of laser beams of the silicon photonics chip. For example, the multi-chip module of item 13 of the scope of the patent application further includes: a polarization rotator, which is used to receive input light from the connection area of the optical fiber to the interposer, and split the TE and TM polarizations of the input light into TE polarization, wherein the polarization rotator is optically connected to two corresponding light guides for directing light from the polarization rotator to the optical amplifier module. The multi-chip module as claimed in claim 18, wherein the polarization rotator is formed in the interposer device. The multi-chip module of claim 13, wherein the interposer device includes a recessed area, and the laser source chip is disposed in the recessed area to allow optical edge coupling of the light guide in the laser source chip to corresponding lightguides within the first set of light-transmitting structures. A multi-chip module as claimed in claim 13, wherein the interposer device includes a recessed area in which the silicon photonics chip is disposed to allow optical edge coupling of light guides within the silicon photonics chip to the Corresponding light guides in the first set of light transmission structures and in the second set of light transmission structures. The multi-chip module of claim 13, wherein the interposer device includes a recessed area in which the optical amplifier module is disposed to allow optical edge coupling of light guides within the optical amplifier module to corresponding light guides in the second set of light transmission structures and in the third set of light transmission structures. A method of manufacturing a multi-chip module, comprising: providing an interposer device; connecting a laser source chip to the interposer device; connecting a silicon photonics chip to the interposer device; and connecting an optical amplifier module to the interposer device, wherein the interposer device comprises a first set of optical transmission structures optically connecting the laser source chip to the silicon photonics chip, wherein the interposer device comprises a second A set of optical transmission structures, the second set of optical transmission structures optically connects the silicon photonic chip to the optical amplifier module, and wherein the interposer device includes a third set of optical transmission structures, the third set of optical transmission structures will The optical amplifier module is optically connected to a fiber-to-interposer connection area formed within the interposer device. The manufacturing method of the multi-chip module as claimed in claim 23 of the patent scope further includes: connecting a mechanical transmission ferrule to the interposer device, so that the mechanical transmission ferrule forms a frame for the connection area of the optical fiber to the interposer and The optical fiber is indexed to the interposer connection area for connection to a plurality of optical fibers. For example, the manufacturing method of the multi-chip module in item 23 of the scope of the patent application further includes: A polarization rotator is optically connected between the fiber-to-interposer connection area and the optical amplifier module, the polarization rotator is used to receive input light from the fiber-to-interposer connection area, Both TE and TM polarizations are split into TE polarizations, wherein the polarization rotator is optically connected to two corresponding light guides for directing light from the polarization rotator to the optical amplifier module. The method of manufacturing a multi-chip module as claimed in claim 25, wherein the polarization rotator is formed in the interposer device. The method for manufacturing a multi-chip module as claimed in claim 23 of the scope of the patent application further includes: forming a recessed area in the interposer device to receive the silicon photonic chip, the recessed area is used to allow the silicon photonic chip in the The lightguides are optically edge-coupled to corresponding lightguides within the first set of light-transmitting structures and the second set of light-transmitting structures. Such as the method of manufacturing a multi-chip module as claimed in claim 27 of the scope of the patent application, wherein the recessed area is formed to include a side protrusion, and the side protrusion forms a storage tank for an underfill material so that the silicon photonic chip Capillary underfill.

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