US20160190995A1 - Power amplifier interface compatible with inputs separated by mode or frequency - Google Patents

Power amplifier interface compatible with inputs separated by mode or frequency Download PDF

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Publication number
US20160190995A1
US20160190995A1 US14/827,543 US201514827543A US2016190995A1 US 20160190995 A1 US20160190995 A1 US 20160190995A1 US 201514827543 A US201514827543 A US 201514827543A US 2016190995 A1 US2016190995 A1 US 2016190995A1
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block
mode
signal
interface
frequency
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US14/827,543
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Joel Anthony Penticoff
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Skyworks Solutions Inc
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Skyworks Solutions Inc
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Assigned to SKYWORKS SOLUTIONS, INC. reassignment SKYWORKS SOLUTIONS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: PENTICOFF, Joel Anthony
Publication of US20160190995A1 publication Critical patent/US20160190995A1/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/18—Input circuits, e.g. for coupling to an antenna or a transmission line
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/401—Circuits for selecting or indicating operating mode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/225—Indexing scheme relating to amplifiers the input circuit of an amplifying stage comprising an LC-network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/231—Indexing scheme relating to amplifiers the input of an amplifier can be switched on or off by a switch to amplify or not an input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21109—An input signal being distributed by switching to a plurality of paralleled power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21145—Output signals are combined by switching a plurality of paralleled power amplifiers to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7215—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the input of the amplifier

Definitions

  • the present disclosure generally relates to radio-frequency (RF) power amplifier systems.
  • a wireless device can amplify and transmit an RF signal. Such a transmission can be achieved in a given operating mode. Such an RF signal can be in a given frequency band.
  • the present disclosure relates to a power amplifier (PA) system having a first block including a first PA configured to operate in a first mode, and a second block including a second PA configured to operate in a second mode.
  • the PA system further includes an interface implemented in the first block.
  • the interface is configured to be capable of routing a radio-frequency (RF) signal from a transceiver to the first PA, and to be capable of routing the RF signal to the second PA.
  • RF radio-frequency
  • the RF signal can be a mode-separated signal.
  • the interface can be configured to route the mode-separated signal to the first PA.
  • the RF signal can be a frequency-separated signal.
  • the interface can be configured to route the frequency-separated signal to the second PA.
  • the PA system can further include an electrical connection between the interface of the first block and the second block to facilitate the routing of the frequency-separated signal to the second PA.
  • the interface can include a switch having a pole connected to an input port, a first throw and a second throw.
  • the first throw can be connected to the first PA
  • the second throw can be connected to an interface port to allow the routing of the RF signal to the second PA.
  • the first and second modes can include 2G and 3G modes.
  • the first block can be configured for the 2G mode, and the second block can be configured for the 3G mode.
  • the PA system can be substantially the same when implemented for mode-separated or frequency-separated operation.
  • the first block can be configured for the 3G mode, and the second block can be configured for the 2G mode.
  • each of the first block and the second block can further include a plurality of amplification paths.
  • the plurality of amplification paths can include a 2G low band (LB) and a 2G high band (HB) for the corresponding block.
  • the plurality of amplification paths can include a 3G low band (LB) and a 3G mid band (MB) for the corresponding block.
  • the present disclosure relates to a power amplifier (PA) block that includes a PA configured to operate in a first mode, and an interface configured to be capable of routing a radio-frequency (RF) signal from a transceiver to the PA, and also to be capable of routing the RF signal to another PA block configured operate in a second mode.
  • PA power amplifier
  • the first mode can include a 2G mode or a 3G mode.
  • the second mode can include a 3G mode if the first mode is the 2G mode, and a 2G mode if the first mode is the 3G mode.
  • the interface can include a routing circuit.
  • the routing circuit can include a switch having a pole connected to an input port, a first throw and a second throw. The first throw can be connected to the PA, and the second throw can be connected to an interface port to allow the routing of the RF signal to the other PA block.
  • the present disclosure relates to a method for amplifying radio-frequency (RF) signals.
  • the method includes receiving a radio-frequency (RF) signal from a transceiver into an interface implemented in a first power amplifier (PA) block configured to operate in a first mode.
  • the method further includes routing the RF signal to a second PA block configured to operate in a second mode.
  • PA power amplifier
  • the present disclosure relates to a method for fabricating a power amplifier (PA) device.
  • the method includes forming a PA circuit on a substrate, with the PA circuit being configured to operate in a first mode.
  • the method further includes forming a routing circuit on the substrate, with the routing circuit being configured to be capable of receiving a radio-frequency (RF) signal, and to be capable of routing the RF signal to the PA circuit or another PA circuit configured operate in a second mode.
  • RF radio-frequency
  • the present disclosure relates to a method for implementing a power amplifier (PA) system on a circuit board.
  • the method includes mounting a first block on the circuit board, where the first block includes a first PA configured to operate in a first mode, and an interface.
  • the method further includes mounting a second block on the circuit board, where the second block includes a second PA configured to operate in a second mode.
  • the method further includes forming a plurality of electrical connections for the interface to allow the first and second PAs to amplify mode-separated radio-frequency (RF) signals or frequency-separated RF signals.
  • RF radio-frequency
  • the present disclosure relates to a wireless device that includes a transceiver configured to generate a radio-frequency (RF) signal, and a power amplifier (PA) system in communication with the transceiver.
  • the PA system is configured to amplify the RF signal, and includes a first block having a first PA configured to operate in a first mode, and a second block having a second PA configured to operate in a second mode.
  • the PA system further includes an interface implemented in the first block.
  • the interface is configured to be capable of routing the RF signal to the first PA, and to be capable of routing the RF signal to the second PA.
  • the wireless device further includes an antenna in communication with the PA system and configured to facilitate transmission of the amplified RF signal.
  • the wireless device can be a cellular phone capable of operating in 2G and 3G modes.
  • FIG. 1 depicts a power amplifier (PA) system having an interface.
  • PA power amplifier
  • FIG. 2 shows an example of an interface that can be implemented for a PA system having a first PA block and a second PA block.
  • FIG. 3 shows a PA system having first and second PA blocks implemented such that sources of RF signals are separated by mode.
  • FIG. 4 shows a PA system having first and second PA blocks implemented such that sources of RF signals are separated by frequency.
  • FIG. 5 shows an example of a conventional PA system configured to process 2G and 3G signals separated by mode.
  • FIG. 6 shows an example of a conventional PA system configured to process 2G and 3G signals separated by frequency.
  • FIG. 7 shows an example PA system that can be configured to receive RF signals that are separated by mode at a transceiver, and including a 2G PA block and a 3G PA block.
  • FIG. 8 shows an example PA system that can be configured to receive RF signals that are separated by frequency at a transceiver, and including a 2G PA block and a 3G PA block.
  • FIG. 9 shows another example PA system that can be configured to receive RF signals that are separated by mode at a transceiver, and including a 2G PA block and a 3G PA block.
  • FIG. 10 shows another example PA system that can be configured to receive RF signals that are separated by frequency at a transceiver, and including a 2G PA block and a 3G PA block.
  • FIG. 11 shows an example PA system that can be configured to accommodate two separate 2G transceivers.
  • FIG. 12 shows that in some embodiments, one or more features of the present disclosure can be utilized to facilitate processing of 2G signals through a plurality of 3G/4G amplification paths.
  • FIG. 13 shows a process that can be implemented to operate a PA system.
  • FIG. 14 shows a process that can be implemented to fabricate a device having a PA system.
  • FIG. 15 shows a process that can be utilized to implement a chipset in a wireless device such as a cellular phone.
  • FIG. 16 depicts an example wireless device having one or more advantageous features described herein.
  • FIG. 1 depicts a power amplifier (PA) system 102 having an interface 100 .
  • PA power amplifier
  • an interface can be configured to provide advantageous functionalities in how the PA system 102 receives and processes radio-frequency (RF) signals from a transceiver 104 .
  • RF radio-frequency
  • FIG. 2 shows an example of an interface 100 that can be implemented for a PA system 102 having a first PA block 110 and a second PA block 120 .
  • the PA blocks 110 , 120 can be implemented as, for example, PA die, PA modules, parts of other die or modules, chips, or any combination thereof.
  • the PA blocks can also be implemented as generally separate blocks on a common die, module, etc. Although various examples are described herein in the context of two PA blocks, it will be understood that one or more features of the present disclosure can also be utilized for PA systems having different numbers of PA blocks.
  • each of the first and second PA blocks 110 , 120 is shown to include a plurality of PAs 112 , 122 .
  • PAs are indicated as “1” and “2” in each PA block; however, it will be understood that amplification path “1” of the first PA block 110 typically differs in mode and/or frequency from amplification path “1” of the second PA block 120 . In some situations, there may be overlap or similarity in frequency ranges of among such amplification paths the first and second PA blocks 110 , 120 . Similar features can apply to amplification paths “2” of the first and second PA blocks 110 , 120 . Further, although various examples are described herein in the context of two amplification paths per PA block, it will be understood that one or more features of the present disclosure can also be utilized for PA blocks having different numbers of amplification paths.
  • FIG. 2 shows that in some embodiments, the interface 100 can be a routing circuit 106 implemented in the first PA block 110 .
  • a routing circuit can allow the first and second PA blocks 110 , 120 to be interfaced separately with a transceiver (not shown), together, or any combination thereof.
  • a transceiver not shown
  • such a feature can provide significant flexibility in chipset designs using substantially same PA blocks.
  • FIGS. 3 and 4 show an example of such design flexibility utilizing the same PA blocks 110 , 120 .
  • a PA system 102 having the first and second PA blocks 110 , 120 is implemented such that sources of RF signals are separated by mode (e.g., at a transceiver).
  • the first PA block 110 can receive one or more first mode signals through an input 130 .
  • the second PA block 120 can receive one or more second mode signals through an input 140 . Examples of such first and second modes are described herein in greater detail.
  • a routing circuit 106 of the first PA block 110 can be configured such that the one or more first mode signals received through the input 130 is/are routed to its/their respective PA(s). For example, a first RF signal (first mode) to be amplified can be routed to the first PA through path 132 a . Similarly, a second RF signal (first mode) to be amplified can be routed to the second PA through path 132 b.
  • the one or more second mode signals received through the input 140 is/are routed to its/their respective PA(s).
  • a first RF signal (second mode) to be amplified can be routed to the first PA through path 142 a .
  • a second RF signal (second mode) to be amplified can be routed to the second PA through path 142 b . Accordingly, one can see that the inputs of the first and second PA blocks 110 , 120 remain generally separated in the example of FIG. 3 .
  • a PA system 102 having the first and second PA blocks 110 , 120 is implemented such that sources of RF signals are separated by frequency.
  • the first PA block 110 can receive a plurality of frequency-separated RF signals from a transceiver (not shown).
  • a transceiver not shown.
  • frequency separation and related frequencies can be based on frequency values, frequency ranges (e.g., as in frequency bands), or any combination thereof.
  • a first RF signal having a first frequency is shown to be received by the routing circuit 106 through a first input 134 .
  • a second RF signal having a second frequency is shown to be received by the routing circuit 106 through a second input 136 . Examples of such first and second frequencies are described herein in greater detail.
  • the routing circuit 106 can be configured such that the RF signal(s) received through the input(s) ( 134 or/and 136 ) is/are routed to its/their respective PA(s) in the first PA block 110 .
  • the first RF signal (first frequency) to be amplified can be routed to the first PA through path 132 a .
  • the second RF signal (second frequency) to be amplified can be routed to the second PA through path 132 b.
  • the routing circuit 106 can be configured such that the RF signal(s) received through the input(s) ( 134 or/and 136 ) is/are routed to its/their respective PA(s) in the second PA block 120 .
  • Such routing of RF signals between the two PA blocks is shown to be facilitated by signal paths 138 implemented in the first PA block 110 , and signal paths 144 implemented between the first and second PA blocks 110 , 120 .
  • the first RF signal (first frequency) to be amplified can be routed to the first PA of the second PA block 120 through one of the signal paths 138 , one of the signal paths 144 , and path 142 a .
  • the second RF signal (second frequency) to be amplified can be routed to the second PA of the second PA block 120 through one of the signal paths 138 , one of the signal paths 144 , and path 142 b.
  • substantially the same PA blocks 110 , 120 can be utilized for both of the band-separated ( FIG. 3 ) and frequency-separated ( FIG. 4 ) configurations. As described herein, such an advantageous flexibility can be facilitated by one or more features of the routing circuit 106 .
  • FIGS. 5 and 6 show examples of conventional PA systems for comparison with various examples of PA systems of FIGS. 7-12 , where routing functionalities as described herein can be implemented in at least one PA block.
  • FIG. 5 shows an example of a conventional PA system 10 configured to process 2G and 3G signals from a transceiver (not shown). Such signals are separated by mode (e.g., 2G and 3G) from the transceiver. Accordingly, one or more 2G signals can be provided directly to a 2G PA block 12 , and one or more 3G signals can be provided directly to a 3G PA block 14 .
  • the 2G PA block 12 is shown to include dual-band PAs (2G low band (LB), 2G high band (HB)) receiving their respective signals (2GLB/2GHB) through a single input.
  • the 3G PA block 14 is shown to include dual-band PAs (3G LB), 3G mid band (MB)) receiving their respective signals (3GLB/3GMB) through a single input.
  • FIG. 6 shows an example of a conventional PA system 20 configured to process 2G and 3G signals from a transceiver (not shown). Such signals are separated by frequency (e.g., 2GLB/3GLB and 2GHB/3GMB) from the transceiver.
  • a switching circuit 26 is typically provided, where the switching circuit 26 is external to both of the 2G PA and 3G PA blocks 22 , 24 .
  • the switching circuit 26 is depicted as having a pole for each of the two inputs, and two throws for each pole. More particularly, the first pole is shown to receive a 2GLB signal or a 3GLB signal from the transceiver, and the second pole is shown to receive a 2GHB signal or a 3GMB signal from the transceiver.
  • the first pole can be connected to the first throw to thereby route the 2GLB signal to a 2G LB PA in the 2G PA block 22
  • second pole can be connected to the first throw to thereby route the 2GHB signal to a 2G HB PA also in the 2G PA block 22 .
  • the first pole when operating in 3G mode, can be connected to the second throw to thereby route the 3GLB signal to a 3G LB PA in the 3G PA block 24 , and second pole can be connected to the second throw to thereby route the 3GMB signal to a 3G MB PA also in the 3G PA block 24 .
  • the input configurations for the PA blocks are significantly different between the mode-separated configuration and the frequency-separated configuration.
  • a single input is shown to split into two input paths within the corresponding PA block.
  • two separate input paths are shown to be provided for the two PAs. Accordingly, the 2G PA block 12 of FIG. 5 and the 2G PA block 22 of FIG. 6 generally cannot be interchanged. Similarly, the 3G PA block 14 of FIG. 5 and the 3G PA block 24 of FIG. 6 generally also cannot be interchanged.
  • FIGS. 7-12 show non-limiting examples of a PA system where a routing circuit 100 can be implemented in at least one PA block.
  • FIGS. 7 and 8 show examples of mode-separated and frequency-separated source configurations, respectively, where a 2G PA block includes such a routing circuit.
  • FIGS. 9 and 10 show examples of mode-separated and frequency-separated source configurations, respectively, where a 3G PA block includes such a routing circuit.
  • FIGS. 11 and 12 show additional examples where one of the 2G PA and 3G PA blocks includes such a routing circuit.
  • a PA system 150 is shown to be configured to receive RF signals that are separated by mode at a transceiver (not shown).
  • the PA system 150 is shown to include a 2G PA block 110 and a 3G PA block 120 .
  • the 2G PA block 110 is shown to include a routing circuit 100 configured to receive 2GLB/2GHB signals from a single source. More particularly, the routing circuit 100 can include two input ports ( 113 a , 113 b ) and two corresponding switches (S 1 , S 2 ), with each input port being connected to a pole of the corresponding switch.
  • the first input port 113 a can be connected to the pole of the first switch S 1
  • the second input port 113 b can be connected to the pole of the second switch S 2 .
  • each of the switches S 1 , S 2 is shown to include two throws.
  • the first throw is shown to be connected to an input of a 2G LB PA.
  • the first throw of the second switch S 2 is shown to be connected to an input of a 2G HB PA.
  • each of the first and second switches S 1 , S 2 is shown to be connected to an interface port ( 114 a or 114 b ) that is unused in the example configuration of FIG. 7 .
  • interface ports can provide desired connectivity between the 2G PA and 3G PA blocks.
  • the 3G PA block 120 is shown to include two input ports 123 a , 123 b that are connected to 3G LB PA and 3G MB PA, respectively. Accordingly, the 3GLB/3GMB signals from the single frequency-separated source is shown to be split into the two input ports 123 a , 123 b of the 3G PA block 120 .
  • the 3G PA block 120 can process 3G signals generally independently from the 2G PA block 110 .
  • the 2GLB/2GHB signals from the single frequency-separated source is shown to be split into the two input ports 113 a , 113 b of the 2G PA block 110 . Accordingly, with the two switches S 1 , S 2 having the poles connected to the first throws (as shown in FIG. 7 ), the 2G PA block can process 2G signals generally independently from the 3G PA block 120 .
  • a PA system 152 is shown to be configured to receive RF signals that are separated by frequency at a transceiver (not shown).
  • the PA system 152 is shown to include a 2G PA block 110 and a 3G PA block 120 .
  • the 2G PA and 3G PA blocks 110 , 120 of FIG. 8 can be substantially same as the 2G PA and 3G PA blocks 110 , 120 of FIG. 7 .
  • input configurations can be adjusted from the examples of FIG. 7 to accommodate the frequency-separated system of FIG. 8 .
  • 2GLB/3GLB signals from a frequency-separated source are shown to be provided to the first input port 113 a .
  • the 2GLB/3GLB signals can be routed to the 3G LB PA of the 3G PA block 120 for amplification, through the first interface port 114 a of the 2G PA block 110 , one of inter-block connections 115 , and the first input port 123 a of the 3G PA block 120 .
  • 2GHB/3GMB signals from the frequency-separated source are shown to be provided to the second input port 113 b .
  • the 2GHB/3GMB signals can be routed to the 3G MB PA of the 3G PA block 120 for amplification, through the second interface port 114 b of the 2G PA block 110 , one of the inter-block connections 115 , and the second input port 123 b of the 3G PA block 120 .
  • FIGS. 9 and 10 show examples of mode-separated and frequency-separated source configurations, respectively, where a 3G PA block includes such a routing circuit.
  • a PA system 154 is shown to be configured to receive RF signals that are separated by mode at a transceiver (not shown).
  • the PA system 154 is shown to include a 2G PA block 110 and a 3G PA block 120 .
  • the 3G PA block 120 is shown to include a routing circuit 100 .
  • the PA system 154 of FIG. 9 can be similar to the example of FIG. 7 .
  • 2GLB/2GHB signals from a single frequency-separated source are shown to be split into the two input ports of the 2G PA block 110 .
  • the 2G PA block 110 can process 2G signals generally independently from the 3G PA block 120 .
  • 3GLB/3GMB signals from the single frequency-separated source are shown to be split into the two input ports of the 3G PA block 120 .
  • the 3G PA block can process 3G signals generally independently from the 2G PA block 110 .
  • a PA system 156 is shown to be configured to receive RF signals that are separated by frequency at a transceiver (not shown).
  • the PA system 156 is shown to include a 2G PA block 110 and a 3G PA block 120 .
  • the 3G PA block 120 is shown to include a routing circuit 100 .
  • the PA system 156 of FIG. 10 can be similar to the example of FIG. 8 .
  • 2GLB/3GLB signals from a frequency-separated source are shown to be provided to the first input port of the 3G PA block 120 , and can be routed to the 2G LB PA of the 2G PA block 110 as described herein.
  • 2GHB/3GMB signals from the frequency-separated source are shown to be provided to the second input port of the 3G PA block 120 , and can be routed to the 2G HB PA of the 2G PA block 110 .
  • all of the input signals are shown to be routed to the 2G PA block 110 for amplification. However, it will be understood that some or all of such input signals can also be amplified by the 3G PA block 120 .
  • the output of the 2G LB PA (in the 2G PA blocks) is shown to be routed to an antenna switch through a low-pass filter.
  • the output of the 2G HB PA is shown to be routed to the antenna switch through a low-pass filter.
  • the amplified signals are show to be routed from the outputs of the 3G LB and 3G MB PAs to the antenna switch through a band selection switch and a duplexer bank.
  • the antenna switch is shown to be connected to an antenna port to facilitate transmission of the amplified 2G/3G signals.
  • the same antenna port and the antenna switch can also facilitate receive (RX) operations.
  • RX receive
  • the received signals can be routed from the antenna port to “Rx Outputs” through the antenna switch and the duplexer bank.
  • the 2G PA block 110 is depicted as a front-end module (FEM).
  • FEM front-end module
  • the 3G PA block 120 having one or more features as described herein can be implemented in, for example, a die (e.g., a PA die) or a packaged module (e.g., a PA module or a front-end module).
  • a die e.g., a PA die
  • a packaged module e.g., a PA module or a front-end module.
  • the 2G PA block 110 and 3G PA block 120 having one or more features as described herein do not necessarily need to be implemented in separate devices, and some or all of such PA blocks can be implemented in a common device.
  • the same PA blocks can be used for both mode-separated and frequency-separated applications. More particularly, minor changes in connections to the input ports and connections between the PA blocks allows the same PA blocks to be utilized for both of the mode-separated and frequency-separated applications. Further, the need for an external switch (in the conventional PA system for frequency-separated operation (e.g., FIG. 6 )) can be eliminated.
  • FIGS. 11 and 12 show examples of variations that can be implemented from the various configurations described in reference to FIGS. 7-10 . It will be understood that other design variations are also possible.
  • a PA system 160 can be configured to, for example, accommodate situations involving two separate 2G transceivers.
  • one transceiver can provide a low band signal 2GLB
  • another transceiver can provide a high band signal 2GHB to the PA system 160 .
  • the 2GLB and 2GHB signals can be provided to the first and second input ports of a 2G PA block 110 similar to the example of FIG. 7 . Accordingly, either or both of the 2GLB and 2GHB signals can be amplified by the corresponding PAs in the 2G PA block 110 as described herein.
  • FIG. 12 shows that in some embodiments, one or more features of the present disclosure can be utilized to facilitate, for example, processing 2G signals through a plurality of 3G/4G amplification paths.
  • a low band 2G signal (2GLB) is shown to be provided to a 3G/4G low band PA and a 3G/4G very low band PA. Additional details concerning such a technique are described in U.S. Provisional Application No. 62/038,322 filed Aug. 17, 2014, entitled CIRCUITS AND METHODS FOR 2G AMPLIFICATION USING 3G/4G LINEAR PATH COMBINATION, and its corresponding U.S.
  • such a feature can eliminate the 2G HB PA from the 2G PA block 120 .
  • the input configuration that facilitates the foregoing functionality can be part of a routing circuit 100 implemented in the 3G/4G PA block 110 .
  • a routing circuit can also include a switch S 3 that allows routing of 2G/3G4GMB signals to the 3G/4G MB PA (of the 3G/4G PA block 110 ), or to the 2G HB PA (of the 2G PA block 120 ) through an inter-block connection 115 .
  • FIG. 13 shows a process 200 that can be implemented to operate a PA system.
  • an RF signal can be received at an interface in a first PA.
  • the interface can be operated to route the RF signal to a second PA.
  • FIG. 14 shows a process 210 that can be implemented to fabricate a device having a PA system.
  • a first PA block can be implemented on a first device.
  • an interface such as a routing circuit can be included in the first PA block. Such an interface can be configured to be capable of receiving and routing an RF signal to the first PA block or a second PA block on a second device.
  • FIG. 15 shows a process 220 that can be utilized to implement a chipset in a wireless device such as a cellular phone.
  • a first PA device can be mounted on a circuit board.
  • a second PA device can be mounted on the circuit board.
  • an electrical connection can be formed to allow a signal to be provided to the first PA device from a transceiver.
  • an electrical connection can be made between the first and second PA devices to allow the signal to be routed from the first PA device to the second PA device.
  • a device and/or a circuit having one or more features described herein can be included in an RF device such as a wireless device.
  • a wireless device such as a wireless device.
  • Such a device and/or a circuit can be implemented directly in the wireless device, in a modular form as described herein, or in some combination thereof.
  • such a wireless device can include, for example, a cellular phone, a smart-phone, a hand-held wireless device with or without phone functionality, a wireless tablet, etc.
  • FIG. 16 depicts an example wireless device 400 having one or more advantageous features described herein.
  • a PA system having one or more features as described herein, such a PA system can be generally depicted by a dashed box 102 .
  • such a PA system can include first and second PA blocks 110 , 120 , and at least one of such PA blocks can include an interface 100 (e.g., a routing circuit).
  • Such an interface can receive one or more RF signals from a transceiver 410 , and be routed as described herein.
  • Other RF signals 420 can also be provided to the RF system 102 from the transceiver 410 .
  • the PA system 102 can include one or more electrical connections 115 between the first and second PA blocks 110 , 120 .
  • amplified signals from either or both of the PA blocks 110 , 120 can be provided to an assembly of duplexers 430 . Such amplified signals can then be routed to an antenna 416 through an antenna switch 432 for transmission.
  • RF signals received through the antenna 416 can be routed to one or more low-noise amplifiers (LNAs) 418 through the antenna switch 432 and the duplexers 430 .
  • LNAs low-noise amplifiers
  • the output(s) from the LNA(s) 418 can be routed to the transceiver 410 for further processing.
  • the transceiver 410 is shown to interact with a baseband sub-system 408 that is configured to provide conversion between data and/or voice signals suitable for a user and RF signals suitable for the transceiver 410 .
  • the transceiver 410 is also shown to be connected to a power management component 406 that is configured to manage power for the operation of the wireless device. Such power management can also control operations of the baseband sub-system 408 and the PA system 102 .
  • the baseband sub-system 408 is shown to be connected to a user interface 402 to facilitate various input and output of voice and/or data provided to and received from the user.
  • the baseband sub-system 408 can also be connected to a memory 404 that is configured to store data and/or instructions to facilitate the operation of the wireless device, and/or to provide storage of information for the user.
  • a wireless device does not need to be a multi-band device.
  • a wireless device can include additional antennas such as diversity antenna, and additional connectivity features such as Wi-Fi, Bluetooth, and GPS.
  • the words “comprise,” “comprising,” and the like are to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.”
  • the word “coupled”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Additionally, the words “herein,” “above,” “below,” and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words in the above Description using the singular or plural number may also include the plural or singular number respectively.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)
  • Transmitters (AREA)
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