US20160141487A1 - Manufacturing method for high-temperature piezoelectric element electrode and piezoelectric element structure - Google Patents

Manufacturing method for high-temperature piezoelectric element electrode and piezoelectric element structure Download PDF

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US20160141487A1
US20160141487A1 US14/899,863 US201314899863A US2016141487A1 US 20160141487 A1 US20160141487 A1 US 20160141487A1 US 201314899863 A US201314899863 A US 201314899863A US 2016141487 A1 US2016141487 A1 US 2016141487A1
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piezoelectric element
piezoelectric
electrode
coating
temperature
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US14/899,863
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Yongzhong Nie
Xuejun Chen
Hai Lin
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XIAMEN NIELL ELECTRONICS CO Ltd
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XIAMEN NIELL ELECTRONICS CO Ltd
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Assigned to XIAMEN NIELL ELECTRONICS CO., LTD. reassignment XIAMEN NIELL ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, XUEJUN, LIN, HAI, NIE, Yongzhong
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/06Forming electrodes or interconnections, e.g. leads or terminals
    • H01L41/29
    • H01L41/0471
    • H01L41/0478
    • H01L41/257
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/04Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/06Forming electrodes or interconnections, e.g. leads or terminals
    • H10N30/067Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877Conductive materials
    • H10N30/878Conductive materials the principal material being non-metallic, e.g. oxide or carbon based

Definitions

  • the present invention relates to the field of piezoelectric sensor technology, and in particular relates to a manufacturing method for an electrode of a high-temperature piezoelectric element and a structure of a piezoelectric element.
  • the piezoelectric ceramics has been widely used in various fields of sensors and micro-actuators. In most cases, if sensors are applied at room temperature or applied in an engine (which is usually less than 400 degrees Celsius), people can use silver slurry or gold-palladium slurry (which is usually used at a temperature above 300 degrees Celsius but below 500 degrees Celsius). But with the development of science and technology, people also need to measure various physical quantities at high-temperature regions such as aero-engines, gas turbine engines, rocket exhaust nozzle and etc., and in these regions the temperature is much higher than the above mentioned conventional slurry electrode canendure.
  • the present invention provides a manufacturing method for an electrode of a high-temperature piezoelectric element and a structure of a piezoelectric element, wherein the coating of conventional electrode slurry is removed, and the resistance is relatively stable in a high-temperature environment.
  • a manufacturing method for an electrode of a high-temperature piezoelectric element comprising the following steps: a) molding piezoelectric material according to specifications; b) coating, sputtering or evaporating traditional conductive slurry on upper and lower surfaces of the molded piezoelectric material; c) polarizing the piezoelectric material coated with the conductive slurry; d) removing the coating of the conductive slurry on the surfaces of the piezoelectric material; e) connecting electrode lead wires on the surfaces of the piezoelectric material, to output a signal generated by piezoelectric effect thereof.
  • step f) connecting the piezoelectric materials which have the coatings removed by way of stacking or series-parallel connection.
  • it further comprises spraying diamond or graphite on the surfaces of the piezoelectric material which has the coating removed to form electrodes, and adjusting the roughness of the sprayed surfaces.
  • adjust the roughness of the sprayed surfaces is by means of grinding.
  • it further comprises connecting the piezoelectric materials which have diamond or graphite electrodes sprayed on by way of stacking or series-parallel connection.
  • the conductive slurry is metallic slurry; removing the coating of the conductive slurry is by chemical etching or in a physical manner.
  • a structure of a piezoelectric element of the invention comprises polarized piezoelectric material which has coating of metallic conductive slurry removed from its surfaces; the surfaces of the polarized piezoelectric material are connected to electrode lead wires, to output a signal generated by piezoelectric effect thereof.
  • diamond or graphite are sprayed on the surfaces of the polarized piezoelectric material to form electrodes.
  • the structure of the piezoelectric element comprises multiple layers of the piezoelectric material, the respective piezoelectric materials are connected by way of stacking or series-parallel connection.
  • the beneficial effects of the present invention are that by removing the traditional coating of slurry for electrode, it is avoided that the output resistance of the piezoelectric element is reduced because of the high temperature diffusion of electrode material at a high temperature, and the thermal performance of the piezoelectric element is improved; and by adding diamond or graphite coating as an electrode, the sensitivity of outputting charges of the piezoelectric element is improved.
  • FIG. 1 is a schematic view of the process of manufacturing an electrode of a piezoelectric element of the invention
  • FIG. 2 is a schematic view of the process of manufacturing an electrode of a piezoelectric element of the invention
  • FIG. 3 is a schematic view of structure one of a piezoelectric element of the invention.
  • FIG. 4 is a schematic view of structure two of a piezoelectric element of the invention.
  • embodiment one of a manufacturing method for an electrode of a high-temperature piezoelectric element comprises the following steps: a) molding piezoelectric material 1 according to specifications; b) coating, sputtering or evaporating traditional conductive slurry on upper and lower surfaces of the molded piezoelectric material 1 ; c) polarizing the piezoelectric material 1 coated with the conductive slurry; d) removing the coating 2 of the conductive slurry on the surfaces of the piezoelectric material 1 ; e) connecting electrode lead wires 3 on the surfaces of the piezoelectric material 1 , to output a signal generated by piezoelectric effect thereof.
  • the method comprises molding the piezoelectric ceramics according to the actual design we need, on the upper and lower surfaces of the piezoelectric ceramics coating, sputtering or evaporating traditional conductive slurry, such as silver slurry or gold-palladium slurry and the like, then polarizing the piezoelectric ceramic, removing the coating 2 of the conductive slurry on the surfaces of the piezoelectric ceramics by chemical etching or in a physical manner after polarization, and then using conductive electrodes outside to directly output the signal generated by piezoelectric effect thereof, for example by directly connecting to the surfaces of the piezoelectric material with electrode lead wires 3 to output the signal generated by piezoelectric effect thereof.
  • traditional conductive slurry such as silver slurry or gold-palladium slurry and the like
  • multiple piezoelectric materials 1 having coatings removed can be connected by way of stacking or series-parallel connection, and the signal generated by piezoelectric effect thereof is outputted via electrode lead wires 3 .
  • the output resistance of the piezoelectric element is reduced because of high temperature diffusion of electrode material at a high temperature, and the thermal performance of the piezoelectric element is improved.
  • embodiment two of a manufacturing method for an electrode of a high-temperature piezoelectric element of the invention differs from embodiment one in that diamond or graphite is spraying on the surfaces of the piezoelectric material 1 to form electrodes when the coating 2 of the conductive slurry is removed, and the roughness of the sprayed surfaces is adjusted.
  • the roughness of the surfaces of the sprayed diamond coating or graphite coating 4 can be adjusted by means of grinding.
  • Multiple piezoelectric materials 1 having diamond or graphite coating 4 sprayed on can be connected by way of stacking or series-parallel connection, and the signal generated by piezoelectric effect thereof is outputted via electrode lead wires 3 . Adding diamond or graphite coating 4 as electrodes can improve the sensitivity of outputting charges of the piezoelectric element.
  • FIGS. 3 and 4 are embodiment one and two of a structure of a high-temperature piezoelectric element of the present invention.
  • the structure of a high-temperature piezoelectric element comprises polarized piezoelectric material 1 , such as polarized piezoelectric ceramic, the polarized piezoelectric material 1 has the coating 2 of the metallic conductive slurry removed from its surfaces; and the surfaces of the polarized piezoelectric material 1 are connected to electrode lead wires 3 , to output the signal generated by piezoelectric effect thereof.
  • the structure has the traditional coating 2 of slurry for electrode removed, such that the problem that the output resistance of the piezoelectric element is reduced because of high temperature diffusion of electrode material at a high temperature is solved, and the thermal performance of the piezoelectric element is improved.
  • the structure of the piezoelectric element can comprise multiple layers of the piezoelectric material 1 , and the respective piezoelectric materials are connected by way of stacking or series-parallel connection, and connected to electrode lead wires 3 to output the signal generated by piezoelectric effect thereof.
  • the structure of the piezoelectric element shown in FIG. 4 differs from the above mentioned structure in that diamond or graphite coating 4 is sprayed on the surfaces of the polarized piezoelectric materials 1 to form electrodes, to improve the sensitivity of outputting charges of the piezoelectric element.
  • the structure of the piezoelectric element can also comprise multiple layers of the piezoelectric material 1 having diamond or graphite coating 4 sprayed on, and the respective piezoelectric material 1 are connected by way of stacking or series-parallel connection, and connected to electrode lead wires 3 to output the signal generated by piezoelectric effect thereof.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

A manufacturing method for an electrode of a high-temperature piezoelectric element, comprises: coating traditional conductive slurry on surfaces of a molded piezoelectric material (1); then polarizing the piezoelectric material (1); and then removing the coating of conductive slurry (2) on the surfaces there of, and connecting the piezoelectric material to outside electrode lead wires (3) to output a signal generated by piezoelectric effect thereof. A structure of a high-temperature piezoelectric element, comprises polarized piezoelectric material (1), wherein the coating of metallic conductive slurry (2) is removed from the surfaces of the polarized piezoelectric material (1) and the surfaces of the polarized piezoelectric material (1) is connected to electrode lead wires (3) to output a signal generated by piezoelectric effect thereof. By removing the traditional coating of slurry for electrode, it is avoided that the output resistance of the piezoelectric element is reduced because of the high temperature diffusion of electrode material at a high temperature, and the thermal performance of the piezoelectric element is improved. By adding diamond or graphite coating as electrode, the sensitivity of outputting charges of the piezoelectric element is improved.

Description

    FIELD OF THE INVENTION
  • The present invention relates to the field of piezoelectric sensor technology, and in particular relates to a manufacturing method for an electrode of a high-temperature piezoelectric element and a structure of a piezoelectric element.
  • DESCRIPTION OF THE PRIOR ART
  • The piezoelectric ceramics has been widely used in various fields of sensors and micro-actuators. In most cases, if sensors are applied at room temperature or applied in an engine (which is usually less than 400 degrees Celsius), people can use silver slurry or gold-palladium slurry (which is usually used at a temperature above 300 degrees Celsius but below 500 degrees Celsius). But with the development of science and technology, people also need to measure various physical quantities at high-temperature regions such as aero-engines, gas turbine engines, rocket exhaust nozzle and etc., and in these regions the temperature is much higher than the above mentioned conventional slurry electrode canendure. At this time, if we still use the traditional slurry or the sputtering or evaporation process, it will lead to high-temperature diffusion of electrode material so that the he output resistance of the functional ceramic materials (such as piezoelectric ceramics) will be reduced, but people hope that the bigger output resistance of this kind of products, the better.
  • SUMMARY OF THE INVENTION
  • In order to overcome the above problem, the present invention provides a manufacturing method for an electrode of a high-temperature piezoelectric element and a structure of a piezoelectric element, wherein the coating of conventional electrode slurry is removed, and the resistance is relatively stable in a high-temperature environment.
  • To achieve the above object, the present invention presents a technical solution as follows: a manufacturing method for an electrode of a high-temperature piezoelectric element comprising the following steps: a) molding piezoelectric material according to specifications; b) coating, sputtering or evaporating traditional conductive slurry on upper and lower surfaces of the molded piezoelectric material; c) polarizing the piezoelectric material coated with the conductive slurry; d) removing the coating of the conductive slurry on the surfaces of the piezoelectric material; e) connecting electrode lead wires on the surfaces of the piezoelectric material, to output a signal generated by piezoelectric effect thereof.
  • Further, it further comprises step f) connecting the piezoelectric materials which have the coatings removed by way of stacking or series-parallel connection.
  • Further, it further comprises spraying diamond or graphite on the surfaces of the piezoelectric material which has the coating removed to form electrodes, and adjusting the roughness of the sprayed surfaces.
  • Further, adjust the roughness of the sprayed surfaces is by means of grinding.
  • Further, it further comprises connecting the piezoelectric materials which have diamond or graphite electrodes sprayed on by way of stacking or series-parallel connection.
  • Further, the conductive slurry is metallic slurry; removing the coating of the conductive slurry is by chemical etching or in a physical manner.
  • A structure of a piezoelectric element of the invention, comprises polarized piezoelectric material which has coating of metallic conductive slurry removed from its surfaces; the surfaces of the polarized piezoelectric material are connected to electrode lead wires, to output a signal generated by piezoelectric effect thereof.
  • Further, diamond or graphite are sprayed on the surfaces of the polarized piezoelectric material to form electrodes.
  • Further, the structure of the piezoelectric element comprises multiple layers of the piezoelectric material, the respective piezoelectric materials are connected by way of stacking or series-parallel connection.
  • The beneficial effects of the present invention are that by removing the traditional coating of slurry for electrode, it is avoided that the output resistance of the piezoelectric element is reduced because of the high temperature diffusion of electrode material at a high temperature, and the thermal performance of the piezoelectric element is improved; and by adding diamond or graphite coating as an electrode, the sensitivity of outputting charges of the piezoelectric element is improved.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic view of the process of manufacturing an electrode of a piezoelectric element of the invention;
  • FIG. 2 is a schematic view of the process of manufacturing an electrode of a piezoelectric element of the invention;
  • FIG. 3 is a schematic view of structure one of a piezoelectric element of the invention;
  • FIG. 4 is a schematic view of structure two of a piezoelectric element of the invention.
  • Reference numbers: 1. a piezoelectric material; 2. a coating of conductive slurry; 3. electrode lead wires; 4. graphite coating.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • In conjunction with the drawings and specific embodiments, the present invention is further described below.
  • As shown in FIG. 1, embodiment one of a manufacturing method for an electrode of a high-temperature piezoelectric element comprises the following steps: a) molding piezoelectric material 1 according to specifications; b) coating, sputtering or evaporating traditional conductive slurry on upper and lower surfaces of the molded piezoelectric material 1; c) polarizing the piezoelectric material 1 coated with the conductive slurry; d) removing the coating 2 of the conductive slurry on the surfaces of the piezoelectric material 1; e) connecting electrode lead wires 3 on the surfaces of the piezoelectric material 1, to output a signal generated by piezoelectric effect thereof. For example, taking piezoelectric ceramics as example, the method comprises molding the piezoelectric ceramics according to the actual design we need, on the upper and lower surfaces of the piezoelectric ceramics coating, sputtering or evaporating traditional conductive slurry, such as silver slurry or gold-palladium slurry and the like, then polarizing the piezoelectric ceramic, removing the coating 2 of the conductive slurry on the surfaces of the piezoelectric ceramics by chemical etching or in a physical manner after polarization, and then using conductive electrodes outside to directly output the signal generated by piezoelectric effect thereof, for example by directly connecting to the surfaces of the piezoelectric material with electrode lead wires 3 to output the signal generated by piezoelectric effect thereof. Further, multiple piezoelectric materials 1 having coatings removed can be connected by way of stacking or series-parallel connection, and the signal generated by piezoelectric effect thereof is outputted via electrode lead wires 3. By removing the traditional coating of electrode slurry, it can be avoided that the output resistance of the piezoelectric element is reduced because of high temperature diffusion of electrode material at a high temperature, and the thermal performance of the piezoelectric element is improved.
  • As shown in FIG. 2, embodiment two of a manufacturing method for an electrode of a high-temperature piezoelectric element of the invention, differs from embodiment one in that diamond or graphite is spraying on the surfaces of the piezoelectric material 1 to form electrodes when the coating 2 of the conductive slurry is removed, and the roughness of the sprayed surfaces is adjusted. For example, the roughness of the surfaces of the sprayed diamond coating or graphite coating 4 can be adjusted by means of grinding. Multiple piezoelectric materials 1 having diamond or graphite coating 4 sprayed on can be connected by way of stacking or series-parallel connection, and the signal generated by piezoelectric effect thereof is outputted via electrode lead wires 3. Adding diamond or graphite coating 4 as electrodes can improve the sensitivity of outputting charges of the piezoelectric element.
  • FIGS. 3 and 4 are embodiment one and two of a structure of a high-temperature piezoelectric element of the present invention.
  • As shown in FIG. 3, the structure of a high-temperature piezoelectric element comprises polarized piezoelectric material 1, such as polarized piezoelectric ceramic, the polarized piezoelectric material 1 has the coating 2 of the metallic conductive slurry removed from its surfaces; and the surfaces of the polarized piezoelectric material 1 are connected to electrode lead wires 3, to output the signal generated by piezoelectric effect thereof. Unlike the prior art, the structure has the traditional coating 2 of slurry for electrode removed, such that the problem that the output resistance of the piezoelectric element is reduced because of high temperature diffusion of electrode material at a high temperature is solved, and the thermal performance of the piezoelectric element is improved.
  • The structure of the piezoelectric element can comprise multiple layers of the piezoelectric material 1, and the respective piezoelectric materials are connected by way of stacking or series-parallel connection, and connected to electrode lead wires 3 to output the signal generated by piezoelectric effect thereof.
  • The structure of the piezoelectric element shown in FIG. 4 differs from the above mentioned structure in that diamond or graphite coating 4 is sprayed on the surfaces of the polarized piezoelectric materials 1 to form electrodes, to improve the sensitivity of outputting charges of the piezoelectric element.
  • The structure of the piezoelectric element can also comprise multiple layers of the piezoelectric material 1 having diamond or graphite coating 4 sprayed on, and the respective piezoelectric material 1 are connected by way of stacking or series-parallel connection, and connected to electrode lead wires 3 to output the signal generated by piezoelectric effect thereof.
  • Although the combination of specific preferred embodiments of the present invention shown and described, those skilled in the art would understand that, within the spirit and scope of the appended claims without departing from the invention as defined in the form and details various variations of the present invention to make, both the scope of the invention.

Claims (14)

1. A manufacturing method for an electrode of a high-temperature piezoelectric element, wherein it comprises the following steps: a) molding piezoelectric material according to specifications; b) coating, sputtering or evaporating traditional conductive slurry on upper and lower surfaces of the molded piezoelectric material; c) polarizing the piezoelectric material coated with the conductive slurry; d) removing the coating of the conductive slurry on the surfaces of the piezoelectric material; e) connecting electrode lead wires on the surfaces of the piezoelectric material, to output a signal generated by piezoelectric effect thereof.
2. The manufacturing method for an electrode of a high-temperature piezoelectric element according to claim 1, wherein it further comprises step f) connecting the piezoelectric materials which have the coatings removed by way of stacking or series-parallel connection.
3. The manufacturing method for an electrode of a high-temperature piezoelectric element according to claim 1, wherein it further comprises spraying diamond or graphite on the surfaces of the piezoelectric material which has the coating removed to form electrodes, and adjusting the roughness of the sprayed surfaces.
4. The manufacturing method for an electrode of a high-temperature piezoelectric element according to claim 3, wherein adjusting the roughness of the sprayed surfaces is by means of grinding.
5. The manufacturing method for an electrode of a high-temperature piezoelectric element according to claim 3, wherein it further comprises connecting the piezoelectric materials which have diamond or graphite electrodes sprayed on by way of stacking or series-parallel connection.
6. The manufacturing method for an electrode of a high-temperature piezoelectric element according to claim 1, wherein the conductive slurry is metallic slurry; removing the coating of the conductive slurry is by chemical etching or in a physical manner.
7. A structure of a high-temperature piezoelectric element, comprising polarized piezoelectric material, wherein the polarized piezoelectric material has coating of metallic conductive slurry removed from its surfaces; the surfaces of the polarized piezoelectric material are connected to electrode lead wires to output a signal generated by piezoelectric effect thereof.
8. The structure of a high-temperature piezoelectric element according to claim 7, wherein diamond or graphite are sprayed on the surfaces of the polarized piezoelectric material to form electrodes.
9. The structure of a high-temperature piezoelectric element according to claim 7, wherein the structure of the piezoelectric element comprises multiple layers of the piezoelectric material; the respective piezoelectric materials are connected by way of stacking or series-parallel connection.
10. The manufacturing method for an electrode of a high-temperature piezoelectric element according to claim 2, wherein the conductive slurry is metallic slurry; removing the coating of the conductive slurry is by chemical etching or in a physical manner.
11. The manufacturing method for an electrode of a high-temperature piezoelectric element according to claim 3, wherein the conductive slurry is metallic slurry; removing the coating of the conductive slurry is by chemical etching or in a physical manner.
12. The manufacturing method for an electrode of a high-temperature piezoelectric element according to claim 4, wherein the conductive slurry is metallic slurry; removing the coating of the conductive slurry is by chemical etching or in a physical manner.
13. The manufacturing method for an electrode of a high-temperature piezoelectric element according to claim 5, wherein the conductive slurry is metallic slurry; removing the coating of the conductive slurry is by chemical etching or in a physical manner.
14. The structure of a high-temperature piezoelectric element according to claim 8, wherein the structure of the piezoelectric element comprises multiple layers of the piezoelectric material; the respective piezoelectric materials are connected by way of stacking or series-parallel connection.
US14/899,863 2013-06-18 2013-07-22 Manufacturing method for high-temperature piezoelectric element electrode and piezoelectric element structure Abandoned US20160141487A1 (en)

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CN201310240971.9A CN103280523B (en) 2013-06-18 2013-06-18 Method for manufacturing high-temperature piezoelectric element electrode and piezoelectric element structure
PCT/CN2013/079756 WO2014201749A1 (en) 2013-06-18 2013-07-22 Manufacturing method for high-temperature piezoelectric element electrode and piezoelectric element structure

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2388242A (en) * 1943-01-11 1945-11-06 Brush Dev Co Piezoelectric transducer
USRE27116E (en) * 1966-01-05 1971-04-20 Piezoelectric multielement device
US5929555A (en) * 1996-04-16 1999-07-27 Matsushita Electric Industrial Co., Ltd. Piezoelectric resonator and method for fabricating the same
US6577044B1 (en) * 1999-06-01 2003-06-10 Beijing Hanzhiyuan Electron Co., Ltd. Multi-output composite piezoelectric transformer with expansion vibration mode
US7633210B2 (en) * 2003-07-28 2009-12-15 Kyocera Corporation Multi-layer electronic component and method for manufacturing the same, multi-layer piezoelectric element
US20130270969A1 (en) * 2005-11-29 2013-10-17 Kyocera Corporation Multi-Layer Electronic Component and Method for Manufacturing the Same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4056654A (en) * 1975-07-24 1977-11-01 Kkf Corporation Coating compositions, processes for depositing the same, and articles resulting therefrom
JPS56160087A (en) * 1980-05-13 1981-12-09 Tdk Corp Manufacture of piezoelectric element
JPH0387076A (en) * 1989-08-30 1991-04-11 Nec Corp Piezoelectric actuator and manufacture thereof
DK164969C (en) 1990-05-22 1993-02-15 Hh Patent As spindle drive
JPH11317552A (en) * 1998-05-07 1999-11-16 Tokin Corp Laminated piezoelectric transformer
DE60037433T2 (en) 1999-07-20 2008-12-04 Sri International, Menlo Park Electroactive polymer generators
JP2003298134A (en) * 2002-01-31 2003-10-17 Toyota Motor Corp Laminated piezoelectric actuator
JP4008258B2 (en) * 2002-02-15 2007-11-14 セイコーインスツル株式会社 Method for manufacturing piezoelectric vibrator
JP2006013304A (en) * 2004-06-29 2006-01-12 Murata Mfg Co Ltd Manufacturing method of piezo-electric element
JP5188076B2 (en) * 2006-04-03 2013-04-24 キヤノン株式会社 Piezoelectric element and manufacturing method thereof, electronic device, and ink jet apparatus
CN101009357A (en) * 2007-01-19 2007-08-01 暨南大学 The method for making piezoelectric porcelain transformer
CA2696348A1 (en) * 2007-08-13 2009-03-05 Ultra-Scan Corporation Method of making a piezoelectric device
JP4992796B2 (en) * 2008-03-31 2012-08-08 Tdk株式会社 Oscillator
CN101834268B (en) * 2009-03-10 2012-04-11 上海硅酸盐研究所中试基地 Piezoelectric crystal element
CN101550029A (en) * 2009-04-30 2009-10-07 北京科技大学 A graphite electrode functional ceramic device and its preparation method
JP2011068516A (en) * 2009-09-25 2011-04-07 Tdk Corp Piezoelectric ceramic composition, piezoelectric ceramic, piezoelectric element and oscillator
CN103380504B (en) * 2011-02-24 2016-01-27 京瓷株式会社 Piezoelektrisches mehrschichtelement and possess injection apparatus and the fuel injection system of this Piezoelektrisches mehrschichtelement
DE102011081278A1 (en) * 2011-08-19 2013-02-21 Siemens Aktiengesellschaft Piezoceramic multilayer component

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2388242A (en) * 1943-01-11 1945-11-06 Brush Dev Co Piezoelectric transducer
USRE27116E (en) * 1966-01-05 1971-04-20 Piezoelectric multielement device
US5929555A (en) * 1996-04-16 1999-07-27 Matsushita Electric Industrial Co., Ltd. Piezoelectric resonator and method for fabricating the same
US6577044B1 (en) * 1999-06-01 2003-06-10 Beijing Hanzhiyuan Electron Co., Ltd. Multi-output composite piezoelectric transformer with expansion vibration mode
US7633210B2 (en) * 2003-07-28 2009-12-15 Kyocera Corporation Multi-layer electronic component and method for manufacturing the same, multi-layer piezoelectric element
US20130270969A1 (en) * 2005-11-29 2013-10-17 Kyocera Corporation Multi-Layer Electronic Component and Method for Manufacturing the Same

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US20180269379A1 (en) 2018-09-20
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CN103280523A (en) 2013-09-04
EP3012879A4 (en) 2017-03-01
CN103280523B (en) 2015-03-25
US10950780B2 (en) 2021-03-16
EP3012879B1 (en) 2019-08-07

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