US20160093778A1 - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
- Publication number
- US20160093778A1 US20160093778A1 US14/495,898 US201414495898A US2016093778A1 US 20160093778 A1 US20160093778 A1 US 20160093778A1 US 201414495898 A US201414495898 A US 201414495898A US 2016093778 A1 US2016093778 A1 US 2016093778A1
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- Prior art keywords
- top surface
- wall
- emitting chip
- glue
- corner line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003292 glue Substances 0.000 claims abstract description 42
- 229920005989 resin Polymers 0.000 claims abstract description 18
- 239000011347 resin Substances 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- 239000000741 silica gel Substances 0.000 claims description 10
- 229910002027 silica gel Inorganic materials 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 5
- 239000003086 colorant Substances 0.000 description 5
- 230000002708 enhancing effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Definitions
- the invention relates to a light emitting diode (hereinafter abbreviated to “LED”), and in particular to a packaged structure of LED for enhancing lumen.
- LED light emitting diode
- the known commercially available projectors comprise representative examples of 3LCD projector, digital light processing (DLP) projector and liquid crystal on silicon (LCoS) and the like.
- the projectors have different principles of color separation and projection.
- most projectors typically use one or more conventional white light sources, such as high pressure halogen lamps or mercuric lamps, and the white light is split into three primary colors, red, green and blue colors by dichroic mirror, panel or color wheel.
- Conventional white light sources are generally bulky, inefficient in emitting one or more primary colors, difficult to integrate, and tend to result in increased size and power consumption so that the projectors with conventional white light sources will not meet the portable need. Therefore, LEDs have been considered as an alternative to conventional white light sources.
- LEDs with three primary colors, red, green and blue colors have the potential to provide the small size and operational lifetime that would compete with conventional light sources for a projector, Smaller and more power efficient full-color LED projectors for portable can be manufactured.
- the LED projectors can be turn on and off rapidly, and have no noise because the semiconductor property of L.E.D.
- the poor brightness of LED that results in poor resolution ratio of projecting image is a drawback for LED projectors.
- the two wires are higher than the outer wall of the resin base so that the two wires can be damaged in the subsequent processing.
- glue is filled into the resin base to package the emitting chip inside the resin base, while the glue is formed as a lens of LED.
- the light emitted from the emitting chip may be influenced by the glue formed as a lens of LED, and the illumination of LED may be reduced.
- a packaged structure of LED of the invention with exposing the emitting chip can enhance the illumination of the light emitting diode.
- the packaged structure of LED of the invention is used as a white light source of a projector to enhance the quality of projection of the projector.
- LED light emitting diode
- the present invention provides a light emitting diode comprising: a lead frame has a plurality of electrode portions thereon, each of the electrode portions having a top surface and a bottom surface, and a gap provided between every two electrode portions; a resin base provided on the lead frame, and the bottom surfaces of the electrode portions being exposed, the resin base having an outer wall with a top portion thereon and around an edge to form an opening, and the opening exposing the top surfaces of the electrode portions; and an inner wall extending from the outer wall, and the inner wall having a planar top portion and an inner side, wherein the planar top portion and the inner side have a junction to form a first corner line, and the top portion of the inner wall is lower than the top portion of the outer wall, and the inner side of the inner wall has a slope to decrease the inner diameter of the opening gradually; an emitting chip attached on the top surface(s) of one or two the electrode portion(s), the emitting chip having a top surface, a bottom surface and two side surfaces connecting the top surface
- the LED of the invention further comprises a circular groove is formed between the inner wall and the outer wall.
- the emitting chip is omnidirectional type, vertical cavity surface type or flip chip type.
- the glue is transparent, translucent, opaque or white silica gel, epoxy resin or a mixture of silica gel and epoxy resin.
- the emitting chip has a submount to attach the emitting chip on the top surface of the electrode portion.
- the emitting chip further has a fluorescent layer on the top surface wherein the fluorescent layer has a top surface, a bottom surface and two side surfaces connecting the top surface and the bottom surface, and the top surface and one of the side surfaces have a junction to form a third corner line.
- the top surface of the fluorescent layer is lower than the top portion of the inner wall so that the surface portion of the glue can be slanted from the first corner line of a junction of the top portion and the inner side of the inner wall to the third corner line of a junction of the top surface and the side surface of the fluorescent layer to expose the top surface of the fluorescent layer.
- the LED of the invention further comprises two wire, wherein one wire is connected electrically to the top surface of the emitting chip with an end, and connected electrically to the top surface of one of the electrode portion with another end, and another wire is connected electrically to the top surface of the emitting chip with an end, and connected electrically to the top surface of another electrode portion with another end, and the two wires are not higher than the outer wall.
- the top portion of the inner wall is higher than the top surface of the emitting chip so that the surface portion of the glue can be slanted from the first corner line of a junction of the top portion and the inner side of the inner wall to the second corner line of a junction of the top surface and one of the side surface of the emitting chip to expose the top surface of the emitting chip and a part of two wires.
- the top surface of the emitting chip is higher than the top portion of the inner wall so that the surface portion of the glue can be slanted from the second corner line of a junction of the top surface and one of the side surface of the emitting chip to the first corner line of a junction of the top portion and the inner side of the inner wall to expose the top surface of the emitting chip and a part of two wires.
- FIG. 1 is a cross sectional view of lead frame and resin base of LED according to the invention.
- FIG. 2 is a cross sectional view of die bonding and wire bonding of LED according to the invention.
- FIG. 3 is a cross sectional view of filling glue of LED according to the invention.
- FIG. 4 is a cross sectional view of lighting up LED according to the invention and shows a path of light.
- FIG. 5 is a cross sectional view of lighting up LED according to the invention and shows another path of light.
- FIG. 6 is a cross sectional view of LED of another embodiment according to the invention.
- FIG. 7 is a cross sectional view of LED of further embodiment according to the invention.
- FIG. 8 is a cross sectional view of LED of still embodiment according to the invention.
- FIG. 9 is a cross sectional view of LED of still another embodiment according to the invention.
- FIG. 1 is a cross sectional view of lead frame and resin base of LED according to the invention. As shown in FIG. 1 , the invention provides a LED comprising a lead 1 and a resin base 2 .
- the lead frame 1 has a plurality of electrode portions 11 , 11 ′, 11 ′′ thereon.
- the electrode portions 11 , 11 ′, 11 ′′ respectively have top surfaces 111 , 111 ′, 111 ′′ and bottom surfaces 112 , 112 ′ 112 ′′.
- the electrode portions 11 , 11 ′, 11 ′′ may be used for conducting electronically and enhancing the heat dissipation of a light emitting chip (not shown in FIG. 1 ).
- the resin base 2 is formed on the lead frame 1 , and the bottom surfaces 112 , 112 ′, 112 ′′ of the electrode portions 11 , 11 ′, 11 ′′ may be exposed.
- the resin base 2 has an outer wall 21 having a top portion 211 thereon and around an edge to form an opening 22 , and the opening 22 may expose the top surfaces 111 , 111 ′, 111 ′′ of the electrode portions 11 , 11 ′, 11 ′′.
- an inner wall 23 extends from the outer wall 21 , and the inner wall 23 has a planar top portion 231 and an inner side 232 .
- the planar top portion 231 and the inner side 232 have a junction to form a first corner line 233 .
- the top portion 231 of the inner wall 23 is lower than the top portion 211 of the outer wall 21 .
- the inner side 232 of the inner wall 23 has a slope to decrease the inner diameter of the opening 22 gradually.
- a circular groove 24 is formed between the inner wall 23 and the outer wall 21 . When glue (not shown in FIG. 1 ) is filled into the circular groove 24 , the circular groove 24 can prevent glue from flowing over the outer wall 21 .
- FIG. 2 is a cross sectional view of die bonding and wire bonding of LED according to the invention.
- an emitting chip 3 is attached on the top surface 111 of the electrode portion 11 .
- the emitting chip 3 has a top surface 31 , a bottom surface 32 and two side surfaces 33 , 33 connecting the top surface 31 and the bottom surface 32 .
- the top surface 31 and one of the side surface 33 have a junction to form a second corner line 34 .
- the emitting chip 3 is attached on the top surface 111 of the electrode portion 11 with the bottom surface 32 , the top surface 31 of the emitting chip 3 is lower than the top portion 231 of the inner wall 23 .
- the emitting chip 3 may be omnidirectional type or vertical cavity surface type.
- one wire 4 is connected electrically to the top surface 31 of the emitting chip 3 with an end, and connected electrically to the top surface 111 ′ of the electrode portion 11 ′ with another end.
- another wire 4 ′ is connected electrically to the top surface 31 of the emitting chip 3 with an end, and connected electrically to the top surface 111 ′′ of the electrode portion 11 ′′ with another end.
- the two wires 4 , 4 ′ are not higher than the outer wall 21 so that the two wires 4 , 4 ′ will not damaged as grasping or sucking the resin base 2 of LED in the subsequent processing. Therefore, the damage ratio of the two wires 4 , 4 ′ can be reduced.
- FIG. 3 is a cross sectional view of filling glue of LED according to the invention.
- glue 5 is filled into a space between the emitting chip 3 and the inner wall 23 . Because the top portion 231 of the inner wall 23 is higher than the top surface 31 of the emitting chip 3 , a surface portion 51 of the glue 5 is slanted from the first corner line 233 of a junction of the top portion 231 and the inner side 232 of the inner wall 23 to the second corner line 34 of a junction of the top surface 31 and one of the side surface 33 of the emitting chip 3 .
- the top surface 31 of the emitting chip 3 and a part of two wires 4 , 4 ′ are exposed.
- glue 5 is filled into the space between the emitting chip 3 and the inner wall 23 , the amount of the glue 5 have to be controlled to form the surface portion 51 of the glue 5 so that the glue 5 will not flow on the top surface 31 of the emitting chip 3 and may fasten the emitting chip 3 .
- the glue 5 is transparent, translucent, opaque or white silica gel, epoxy resin or a mixture of silica gel and epoxy resin.
- FIG. 4 is a cross sectional view of lighting up LED according to the invention and shows a path of light.
- the emitting chip 3 is exposed so that the light emitted from the emitting chip 3 will not influenced by the glue 5 , and the illumination of LED can be enhanced.
- the emitting chip 3 is vertical cavity surface type, and the suitable glue 5 is translucent, opaque or white silica gel, epoxy resin or a mixture of silica gel and epoxy resin. The light 3 a emitted from the emitting chip 3 can directly radiate on an object.
- FIG. 5 is a cross sectional view of lighting up LED according to the invention and shows another path of light.
- the emitting chip 3 is exposed so that the light emitted from the emitting chip 3 will not influenced by the glue 5 , and the illumination of LED can be enhanced.
- the emitting chip 3 is omnidirectional type, and the suitable glue 5 is transparent silica gel, epoxy resin or a mixture of silica gel and epoxy resin.
- the light 3 a emitted from a surface of the emitting chip 3 can directly radiate on an object, and the light 3 b and the light 3 c emitted from a side surface of the emitting chip 3 may through the glue 5 to radiate on the object.
- FIG. 6 is a cross sectional view of LED of another embodiment according to the invention.
- the present embodiment has a structure similar to FIG. 1 to FIG. 5 except that the emitting chip 3 has a submount 35 to attach the emitting chip 3 on the electrode portion 11 , and the second corner line 34 of the emitting chip 3 is higher than the first corner line 233 of the inner wall 23 .
- the glue 5 is filled into a space between the emitting chip 3 and the inner wall 23 , because the top surface 31 of the emitting chip 3 is higher than the top portion 231 of the inner wall 23 , the surface portion 51 of the glue 5 is slanted from the second corner line 34 of a junction of the top surface 31 and one of the side surface 33 of the emitting chip 3 to the first corner line 233 of a junction of the top portion 231 and the inner side 232 of the inner wall 23 . Accordingly, the top surface 31 of the emitting chip 3 and a part of two wires 4 , 4 ′ are exposed.
- the submount 35 in FIG. 6 can be used in the structures of FIG. 1 to FIG. 5 .
- FIG. 7 is a cross sectional view of LED of further embodiment according to the invention.
- the present embodiment has a structure similar to FIG. 1 to FIG. 5 except that the emitting chip 3 is flip chip type.
- the emitting chip 3 b is attached on the electrode portions 11 , 11 ′ with the bottom surface 32 b , the top surface 31 b of the emitting chip 3 b is lower than the top portion 231 of the inner wall 23 .
- the surface portion 51 of the glue 5 is slanted from the first corner line 233 of a junction of the top portion 231 and the inner side 232 of the inner wall 23 to the second corner line 34 b of a junction of the top surface 31 b and one of the side surface 33 b of the emitting chip 3 b . Accordingly, the top surface 31 b of the emitting chip 3 b is exposed.
- FIG. 8 is a cross sectional view of LED of still embodiment according to the invention.
- the present embodiment has a structure similar to FIG. 7 except that the flip chip type emitting chip 3 b has a fluorescent layer 6 on the top surface 31 b .
- the fluorescent layer 6 has a top surface 61 , a bottom surface 62 and two side surfaces 63 , 63 connecting the top surface 61 and the bottom surface 62 .
- the top surface 61 and the side surface 63 have a junction to form a third corner line 64 .
- the top surface 61 of the fluorescent layer 6 is lower than the top portion 231 of the inner wall 23 .
- the surface portion 51 of the glue 5 is slanted from the first corner line 233 of a junction of the top portion 231 and the inner side 232 of the inner wall 23 to the third corner line 64 of a junction of the top surface 61 and the side surface 63 of the fluorescent layer 6 . Accordingly, the top surface 61 of the fluorescent layer 6 is exposed.
- FIG. 9 is a cross sectional view of LED of still another embodiment according to the invention.
- the present embodiment has a structure similar to FIG. 3 except that the top portion 231 of the inner wall 23 extends from the outer wall 21 , and connects to the inner side 212 of the outer wall 21 .
- the top portion 231 of the inner wall 23 can prevent the glue 5 from flowing over the outer wall 21 .
Abstract
Description
- 1. Field of the Invention
- The invention relates to a light emitting diode (hereinafter abbreviated to “LED”), and in particular to a packaged structure of LED for enhancing lumen.
- 2. Brief Description of the Related Art
- Currently, the known commercially available projectors comprise representative examples of 3LCD projector, digital light processing (DLP) projector and liquid crystal on silicon (LCoS) and the like. The projectors have different principles of color separation and projection. However, most projectors typically use one or more conventional white light sources, such as high pressure halogen lamps or mercuric lamps, and the white light is split into three primary colors, red, green and blue colors by dichroic mirror, panel or color wheel. Conventional white light sources are generally bulky, inefficient in emitting one or more primary colors, difficult to integrate, and tend to result in increased size and power consumption so that the projectors with conventional white light sources will not meet the portable need. Therefore, LEDs have been considered as an alternative to conventional white light sources.
- LEDs with three primary colors, red, green and blue colors have the potential to provide the small size and operational lifetime that would compete with conventional light sources for a projector, Smaller and more power efficient full-color LED projectors for portable can be manufactured. In addition, the LED projectors can be turn on and off rapidly, and have no noise because the semiconductor property of L.E.D.
- However, the poor brightness of LED that results in poor resolution ratio of projecting image is a drawback for LED projectors. In addition, after die bonding and wire bonding of LED are completed, the two wires are higher than the outer wall of the resin base so that the two wires can be damaged in the subsequent processing. In the subsequent processing, glue is filled into the resin base to package the emitting chip inside the resin base, while the glue is formed as a lens of LED. The light emitted from the emitting chip may be influenced by the glue formed as a lens of LED, and the illumination of LED may be reduced.
- It is an object of the invention to provide a light emitting diode (LED) to solve the above drawbacks. A packaged structure of LED of the invention with exposing the emitting chip can enhance the illumination of the light emitting diode. The packaged structure of LED of the invention is used as a white light source of a projector to enhance the quality of projection of the projector.
- It is another object of the invention to provide a light emitting diode (LED). After die bonding and wire bonding of LED are completed, the two wires are not higher than the outer wall of the resin base so that the two wires will not damaged in the subsequent processing.
- To achieve the above objects, the present invention provides a light emitting diode comprising: a lead frame has a plurality of electrode portions thereon, each of the electrode portions having a top surface and a bottom surface, and a gap provided between every two electrode portions; a resin base provided on the lead frame, and the bottom surfaces of the electrode portions being exposed, the resin base having an outer wall with a top portion thereon and around an edge to form an opening, and the opening exposing the top surfaces of the electrode portions; and an inner wall extending from the outer wall, and the inner wall having a planar top portion and an inner side, wherein the planar top portion and the inner side have a junction to form a first corner line, and the top portion of the inner wall is lower than the top portion of the outer wall, and the inner side of the inner wall has a slope to decrease the inner diameter of the opening gradually; an emitting chip attached on the top surface(s) of one or two the electrode portion(s), the emitting chip having a top surface, a bottom surface and two side surfaces connecting the top surface and the bottom surface, wherein the top surface and one of the side surfaces have a junction to form a second corner line; and a glue filled into a space between the emitting chip and the inner wall, the glue having a surface portion between the first corner line of the inner wall and the second corner line of the emitting chip to expose the top surface of the emitting chip.
- The LED of the invention further comprises a circular groove is formed between the inner wall and the outer wall. The emitting chip is omnidirectional type, vertical cavity surface type or flip chip type. The glue is transparent, translucent, opaque or white silica gel, epoxy resin or a mixture of silica gel and epoxy resin. The emitting chip has a submount to attach the emitting chip on the top surface of the electrode portion. The emitting chip further has a fluorescent layer on the top surface wherein the fluorescent layer has a top surface, a bottom surface and two side surfaces connecting the top surface and the bottom surface, and the top surface and one of the side surfaces have a junction to form a third corner line. The top surface of the fluorescent layer is lower than the top portion of the inner wall so that the surface portion of the glue can be slanted from the first corner line of a junction of the top portion and the inner side of the inner wall to the third corner line of a junction of the top surface and the side surface of the fluorescent layer to expose the top surface of the fluorescent layer.
- The LED of the invention further comprises two wire, wherein one wire is connected electrically to the top surface of the emitting chip with an end, and connected electrically to the top surface of one of the electrode portion with another end, and another wire is connected electrically to the top surface of the emitting chip with an end, and connected electrically to the top surface of another electrode portion with another end, and the two wires are not higher than the outer wall. In one embodiment, the top portion of the inner wall is higher than the top surface of the emitting chip so that the surface portion of the glue can be slanted from the first corner line of a junction of the top portion and the inner side of the inner wall to the second corner line of a junction of the top surface and one of the side surface of the emitting chip to expose the top surface of the emitting chip and a part of two wires. In another embodiment, the top surface of the emitting chip is higher than the top portion of the inner wall so that the surface portion of the glue can be slanted from the second corner line of a junction of the top surface and one of the side surface of the emitting chip to the first corner line of a junction of the top portion and the inner side of the inner wall to expose the top surface of the emitting chip and a part of two wires.
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FIG. 1 is a cross sectional view of lead frame and resin base of LED according to the invention. -
FIG. 2 is a cross sectional view of die bonding and wire bonding of LED according to the invention. -
FIG. 3 is a cross sectional view of filling glue of LED according to the invention. -
FIG. 4 is a cross sectional view of lighting up LED according to the invention and shows a path of light. -
FIG. 5 is a cross sectional view of lighting up LED according to the invention and shows another path of light. -
FIG. 6 is a cross sectional view of LED of another embodiment according to the invention. -
FIG. 7 is a cross sectional view of LED of further embodiment according to the invention. -
FIG. 8 is a cross sectional view of LED of still embodiment according to the invention. -
FIG. 9 is a cross sectional view of LED of still another embodiment according to the invention. - Other objects and advantages of the present invention will become apparent from the detailed description to follow taken in conjunction with the appended claim.
- Please refer to
FIG. 1 .FIG. 1 is a cross sectional view of lead frame and resin base of LED according to the invention. As shown inFIG. 1 , the invention provides a LED comprising alead 1 and aresin base 2. - The
lead frame 1 has a plurality ofelectrode portions electrode portions top surfaces bottom surfaces gap 12 between twoelectrode portions gap 12′ between twoelectrode portions FIG. 1 , theelectrode portions FIG. 1 ). - The
resin base 2 is formed on thelead frame 1, and thebottom surfaces electrode portions resin base 2 has anouter wall 21 having atop portion 211 thereon and around an edge to form anopening 22, and the opening 22 may expose thetop surfaces electrode portions inner wall 23 extends from theouter wall 21, and theinner wall 23 has a planartop portion 231 and aninner side 232. The planartop portion 231 and theinner side 232 have a junction to form afirst corner line 233. Thetop portion 231 of theinner wall 23 is lower than thetop portion 211 of theouter wall 21. Theinner side 232 of theinner wall 23 has a slope to decrease the inner diameter of the opening 22 gradually. Also, acircular groove 24 is formed between theinner wall 23 and theouter wall 21. When glue (not shown inFIG. 1 ) is filled into thecircular groove 24, thecircular groove 24 can prevent glue from flowing over theouter wall 21. - Please refer to
FIG. 2 .FIG. 2 is a cross sectional view of die bonding and wire bonding of LED according to the invention. As shown inFIG. 2 , after thelead frame 1 and theresin base 2 of LED are completed, anemitting chip 3 is attached on thetop surface 111 of theelectrode portion 11. Theemitting chip 3 has atop surface 31, abottom surface 32 and twoside surfaces top surface 31 and thebottom surface 32. Thetop surface 31 and one of theside surface 33 have a junction to form asecond corner line 34. After theemitting chip 3 is attached on thetop surface 111 of theelectrode portion 11 with thebottom surface 32, thetop surface 31 of the emittingchip 3 is lower than thetop portion 231 of theinner wall 23. InFIG. 2 , the emittingchip 3 may be omnidirectional type or vertical cavity surface type. - After the
emitting chip 3 is attached on thetop surface 111 of theelectrode portion 11, onewire 4 is connected electrically to thetop surface 31 of the emittingchip 3 with an end, and connected electrically to thetop surface 111′ of theelectrode portion 11′ with another end. Also, anotherwire 4′ is connected electrically to thetop surface 31 of the emittingchip 3 with an end, and connected electrically to thetop surface 111″ of theelectrode portion 11″ with another end. - Also, after die bonding and wire bonding of LED are completed, the two
wires outer wall 21 so that the twowires resin base 2 of LED in the subsequent processing. Therefore, the damage ratio of the twowires - Please refer to
FIG. 3 .FIG. 3 is a cross sectional view of filling glue of LED according to the invention. As shown inFIG. 3 , after die bonding and wire bonding of LED are completed,glue 5 is filled into a space between the emittingchip 3 and theinner wall 23. Because thetop portion 231 of theinner wall 23 is higher than thetop surface 31 of the emittingchip 3, asurface portion 51 of theglue 5 is slanted from thefirst corner line 233 of a junction of thetop portion 231 and theinner side 232 of theinner wall 23 to thesecond corner line 34 of a junction of thetop surface 31 and one of theside surface 33 of the emittingchip 3. Accordingly, thetop surface 31 of the emittingchip 3 and a part of twowires glue 5 is filled into the space between the emittingchip 3 and theinner wall 23, the amount of theglue 5 have to be controlled to form thesurface portion 51 of theglue 5 so that theglue 5 will not flow on thetop surface 31 of the emittingchip 3 and may fasten the emittingchip 3. InFIG. 3 , theglue 5 is transparent, translucent, opaque or white silica gel, epoxy resin or a mixture of silica gel and epoxy resin. - Please refer to
FIG. 4 .FIG. 4 is a cross sectional view of lighting up LED according to the invention and shows a path of light. As shown inFIG. 4 , after filling glue, the emittingchip 3 is exposed so that the light emitted from the emittingchip 3 will not influenced by theglue 5, and the illumination of LED can be enhanced. InFIG. 4 , the emittingchip 3 is vertical cavity surface type, and thesuitable glue 5 is translucent, opaque or white silica gel, epoxy resin or a mixture of silica gel and epoxy resin. The light 3 a emitted from the emittingchip 3 can directly radiate on an object. - Please refer to
FIG. 5 .FIG. 5 is a cross sectional view of lighting up LED according to the invention and shows another path of light. As shown inFIG. 5 , after filling glue, the emittingchip 3 is exposed so that the light emitted from the emittingchip 3 will not influenced by theglue 5, and the illumination of LED can be enhanced. InFIG. 5 , the emittingchip 3 is omnidirectional type, and thesuitable glue 5 is transparent silica gel, epoxy resin or a mixture of silica gel and epoxy resin. The light 3 a emitted from a surface of the emittingchip 3 can directly radiate on an object, and thelight 3 b and thelight 3 c emitted from a side surface of the emittingchip 3 may through theglue 5 to radiate on the object. - Please refer to
FIG. 6 .FIG. 6 is a cross sectional view of LED of another embodiment according to the invention. As shown inFIG. 6 , the present embodiment has a structure similar toFIG. 1 toFIG. 5 except that the emittingchip 3 has asubmount 35 to attach the emittingchip 3 on theelectrode portion 11, and thesecond corner line 34 of the emittingchip 3 is higher than thefirst corner line 233 of theinner wall 23. As theglue 5 is filled into a space between the emittingchip 3 and theinner wall 23, because thetop surface 31 of the emittingchip 3 is higher than thetop portion 231 of theinner wall 23, thesurface portion 51 of theglue 5 is slanted from thesecond corner line 34 of a junction of thetop surface 31 and one of theside surface 33 of the emittingchip 3 to thefirst corner line 233 of a junction of thetop portion 231 and theinner side 232 of theinner wall 23. Accordingly, thetop surface 31 of the emittingchip 3 and a part of twowires submount 35 inFIG. 6 can be used in the structures ofFIG. 1 toFIG. 5 . - Please refer to
FIG. 7 .FIG. 7 is a cross sectional view of LED of further embodiment according to the invention. As shown inFIG. 7 , the present embodiment has a structure similar toFIG. 1 toFIG. 5 except that the emittingchip 3 is flip chip type. The emittingchip 3 b is attached on theelectrode portions bottom surface 32 b, thetop surface 31 b of the emittingchip 3 b is lower than thetop portion 231 of theinner wall 23. Thesurface portion 51 of theglue 5 is slanted from thefirst corner line 233 of a junction of thetop portion 231 and theinner side 232 of theinner wall 23 to thesecond corner line 34 b of a junction of thetop surface 31 b and one of theside surface 33 b of the emittingchip 3 b. Accordingly, thetop surface 31 b of the emittingchip 3 b is exposed. - Please refer to
FIG. 8 .FIG. 8 is a cross sectional view of LED of still embodiment according to the invention. As shown inFIG. 8 , the present embodiment has a structure similar toFIG. 7 except that the flip chiptype emitting chip 3 b has afluorescent layer 6 on thetop surface 31 b. Thefluorescent layer 6 has atop surface 61, abottom surface 62 and twoside surfaces top surface 61 and thebottom surface 62. Thetop surface 61 and theside surface 63 have a junction to form athird corner line 64. Thetop surface 61 of thefluorescent layer 6 is lower than thetop portion 231 of theinner wall 23. Thesurface portion 51 of theglue 5 is slanted from thefirst corner line 233 of a junction of thetop portion 231 and theinner side 232 of theinner wall 23 to thethird corner line 64 of a junction of thetop surface 61 and theside surface 63 of thefluorescent layer 6. Accordingly, thetop surface 61 of thefluorescent layer 6 is exposed. - Please refer to
FIG. 9 .FIG. 9 is a cross sectional view of LED of still another embodiment according to the invention. As shown inFIG. 9 , the present embodiment has a structure similar toFIG. 3 except that thetop portion 231 of theinner wall 23 extends from theouter wall 21, and connects to theinner side 212 of theouter wall 21. When theglue 5 is filled into the space between the emittingchip 3 and theinner wall 23, thetop portion 231 of theinner wall 23 can prevent theglue 5 from flowing over theouter wall 21. - Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that a variety of alternate and/or equivalent implementations can be substituted for the specific embodiments shown and described without departing from the scope of the present disclosure. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this disclosure be limited only by the claims and the equivalents thereof.
Claims (10)
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KR102346798B1 (en) * | 2015-02-13 | 2022-01-05 | 삼성전자주식회사 | Semiconductor light emitting device |
US10559722B2 (en) | 2016-04-26 | 2020-02-11 | Citizen Electronics Co., Ltd. | Light-emitting device |
JP6365592B2 (en) * | 2016-05-31 | 2018-08-01 | 日亜化学工業株式会社 | Light emitting device |
JP6493345B2 (en) | 2016-09-16 | 2019-04-03 | 日亜化学工業株式会社 | Light emitting device |
JP6711229B2 (en) * | 2016-09-30 | 2020-06-17 | 日亜化学工業株式会社 | Printed circuit board manufacturing method and light emitting device manufacturing method |
KR20180070149A (en) | 2016-12-16 | 2018-06-26 | 삼성전자주식회사 | Semiconductor light emitting device |
KR102426118B1 (en) * | 2017-10-13 | 2022-07-27 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Light emitting device package and light source unit |
DE102018125138A1 (en) * | 2018-10-11 | 2020-04-16 | Osram Opto Semiconductors Gmbh | RADIATION-EMITTING COMPONENT AND METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT |
CN212365400U (en) * | 2020-05-13 | 2021-01-15 | 深圳市洲明科技股份有限公司 | LED display module and LED display screen |
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US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
JP4654670B2 (en) * | 2003-12-16 | 2011-03-23 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
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