US20160071743A1 - Integrated circuit package fabrication with die attach paddle having middle channels - Google Patents
Integrated circuit package fabrication with die attach paddle having middle channels Download PDFInfo
- Publication number
- US20160071743A1 US20160071743A1 US14/941,865 US201514941865A US2016071743A1 US 20160071743 A1 US20160071743 A1 US 20160071743A1 US 201514941865 A US201514941865 A US 201514941865A US 2016071743 A1 US2016071743 A1 US 2016071743A1
- Authority
- US
- United States
- Prior art keywords
- die
- die attach
- attach paddle
- integrated circuit
- channels
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 238000000034 method Methods 0.000 claims description 21
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- 239000012811 non-conductive material Substances 0.000 claims 1
- 206010041662 Splinter Diseases 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- HUWSZNZAROKDRZ-RRLWZMAJSA-N (3r,4r)-3-azaniumyl-5-[[(2s,3r)-1-[(2s)-2,3-dicarboxypyrrolidin-1-yl]-3-methyl-1-oxopentan-2-yl]amino]-5-oxo-4-sulfanylpentane-1-sulfonate Chemical compound OS(=O)(=O)CC[C@@H](N)[C@@H](S)C(=O)N[C@@H]([C@H](C)CC)C(=O)N1CCC(C(O)=O)[C@H]1C(O)=O HUWSZNZAROKDRZ-RRLWZMAJSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
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- 238000010276 construction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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Definitions
- multiple dies are attached to the die attach paddle.
- a power die is mounted on the die attach paddle with conductive epoxy and a controller die is mounted on the die attach paddle with nonconductive epoxy.
- Each die is connected by bondwires to one or more leads.
- Such a configuration is sometimes provided in a quad-flat no-leads package (“QFN”) in which the bottom of the die attach paddle is exposed and surface portions of the leads are exposed at the bottom and side walls of the package.
- QFN quad-flat no-leads package
- a controller die 32 having a top surface 34 and a bottom surface 36 is attached to the top surface 16 of the die attach paddle 14 by a nonconductive die attach film 38 .
- controller dies such as die 32
- the wafer Prior to singulation of the controller die wafer, the wafer is attached at its lower surface to a sheet of nonconductive die attach film (not shown).
- the sheet of die attach film is attached to the top surface of a sheet of dicing tape (not shown), which is, in turn, attached at its periphery to a wafer frame.
- a singulating saw cuts entirely through the wafer and entirely through the die attach film sheet and half way through the sheet of dicing tape.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Die Bonding (AREA)
Abstract
A method of making an integrated circuit package. A leadframe having a die attach paddle surrounded by lead portions is formed. Middle channels underlying in said die attach paddle portion in a region thereof adapted to receive a first die are formed
Description
- This application is a Divisional of and claims priority to U.S. patent application Ser. No. 13/974,323, filed Aug. 23, 2013, the disclosure of which is hereby incorporated by reference herein in its entirety.
- Integrated circuit packages are produced in a variety of different configurations for different purposes. A typical integrated circuit package includes a leadframe having a die attach paddle (pad) and a plurality of surrounding leads. A die is typically mounted on the die attach paddle either by a conductive or nonconductive adhesive layer. One or more contacts on a top surface of the die are typically attached to one or more of the leadframe leads by bondwires.
- The leadframe, die and bondwires are generally encapsulated in mold compound which protects the various components of the die package from moisture, etc. Portions of the die attach paddle may be exposed to enable heat dissipation from the package. Portions of the leads are also exposed to enable electrical connection of the package to other electronic components.
- In some integrated circuit packages multiple dies are attached to the die attach paddle. In one known package configuration a power die is mounted on the die attach paddle with conductive epoxy and a controller die is mounted on the die attach paddle with nonconductive epoxy. Each die is connected by bondwires to one or more leads. Such a configuration is sometimes provided in a quad-flat no-leads package (“QFN”) in which the bottom of the die attach paddle is exposed and surface portions of the leads are exposed at the bottom and side walls of the package.
-
FIG. 1 is a schematic cross sectional elevation view of an integrated circuit package illustrating a defect discovered by applicants. -
FIG. 2 is a schematic top plan view of a portion of the integrated circuit package ofFIG. 1 . -
FIG. 3 is a schematic cross sectional elevation view of an integrated circuit package illustrating another defect discovered by applicants. -
FIG. 4 is a top plan view of a portion of the integrated circuit package ofFIG. 3 . -
FIG. 5 is a schematic cross sectional elevation view of an integrated circuit package having a plurality of half etched channels positioned below a controller die. -
FIG. 6 is a top plan view of a lead frame which is half etched as illustrated inFIG. 5 , prior to mounting of dies thereon. -
FIG. 7 is a flow chart illustrating a method of making an integrated circuit package. - This specification, in general, discloses an
integrated circuit package 10 having adie attach paddle 14 as illustrated inFIGS. 5 and 6 . A power die 22 and a controller die 32 are mounted on the die attach paddle 14. The dieattach paddle 14 has at least one recessed portion, e.g., 72, which is at least partially underlays the controller die 32. -
FIG. 1 illustrates a problem in anintegrated circuit package 10 such as a quad flat no leads integrated circuit package (QFN). TheIC package 10 includes alead frame 12 having adie attach paddle 14 with atop surface 16, abottom surface 18 and a plurality ofleads 20. Theleads 20 are separated from the dieattach paddle 14 byvoids 19. - A
power die 22 having atop surface 24 and abottom surface 26 is mounted on thetop surface 16 of the die attach paddle by a layer ofconductive adhesive 28 such as conductive die attach film or conductive epoxy. Abond wire 30 connects a contact surface on the power die to one of theleads 20. - A controller die 32 having a
top surface 34 and abottom surface 36 is attached to thetop surface 16 of thedie attach paddle 14 by a nonconductivedie attach film 38. As is known in the art controller dies, such as die 32, are singulated from a controller die wafer. Prior to singulation of the controller die wafer, the wafer is attached at its lower surface to a sheet of nonconductive die attach film (not shown). The sheet of die attach film is attached to the top surface of a sheet of dicing tape (not shown), which is, in turn, attached at its periphery to a wafer frame. During singulation of the wafer, a singulating saw cuts entirely through the wafer and entirely through the die attach film sheet and half way through the sheet of dicing tape. A pick-and-place head engages a top surface of each die, one at a time, and places each die on an associated die attach paddle. A singulated portion of die attach film sheet is retained on the bottom surface of each die as it is lifted from the dicing tape sheet. The singulated portion of the nonconductive die attach film sheet, referred to herein as the nonconductive dieattach film layer 38, is thus positioned between the controller die 34 and thetop surface 16 of the dieattach paddle 14 to which the die 34 is transferred. The nonconductive dieattach film layer 38 thus holds the associateddie 34 on the dieattach paddle 14 in electrical isolation from the dieattach paddle 14. - A
bond wire 31 may connect a contact on the controller die 32 to aleadframe lead 20. Theleadframe 12, power die 22, controller die 32 andbondwires mold compound 40. In a typical QFN package, the die attachpaddle bottom surface 18 is exposed through themold compound 40. Bottom and end surfaces of theleads 20 are also exposed through themold compound 40. - Applicant has discovered that during the controller die singulation process, silicon splinters, such as
splinter 52, may become embedded in the dieattach film layer 38 near the periphery of the controller die 32.Such splinters 52 may create an electrical path between the controller die and the dieattach paddle 14. Because the dieattach paddle 14 is electrically connected to thepower die 22, this leakage path provided by thesilicon splinter 52 may cause a short circuit to thepower die 22, resulting in failure of theintegrated circuit package 10.FIG. 2 is a top plan view of the controller die 32 illustrating a typical position of asilicon splinter 52 about the periphery of the controller die 32. -
FIG. 3 illustrates another source of defects in integrated circuit packages that has been discovered by applicant. The structure of the illustrated integrated circuit package is the same as that illustrated inFIG. 1 . However, in the integrated circuit package ofFIG. 3 , a defect is caused by ahole 56 produced in the center of the dieattach film layer 38 by an ejector needle (not shown) that pushed through thelayer 38 during die ejection from a die bonding machine (not shown). Thishole 56 which is typically on the order of 0.05 mm to 0.2 mm in diameter places thebottom surface 36 of the controller die sufficiently close to thetop surface 16 of thedie attach paddle 14 to create an electrical path to thedie attach paddle 14 and thence to the power die 22.FIG. 4 is a top plan view of the power die 22 mounted on the diepaddle 14 showing thehole 56 in hidden lines. Thus, the result of such a hole in thefilm layer 38 is often a short circuit and resulting failure of the integratedcircuit package 10. - An
integrated circuit package 110, which obviates package failures caused bysilicon splinters 52 orejector pin holes 56, is illustrated inFIG. 5 . The structure of thisIC package 10 may be substantially the same as that described above with respect toFIGS. 1-4 . A difference is that at least one recessed portion, e.g., 72 or 74 is provided beneath the controller die 34 and dieattach film 38. In the embodiment illustrated inFIGS. 5 and 6 , threeparallel channels parallel channels die attach paddle 14 is indicated in dashed lines inFIG. 6 .) Thechannels 62, etc., may be formed by half etching the dieattach paddle 14. The half etching process is known in the art and will thus not be further described herein. Thechannels 62, etc., are provided in an arrangement such that theperipheral portion 33 of the controller die 32 is suspended within the half etch channels, specificallychannels silicon splinters 52 are located in the dieattach film 38 at theperiphery 33 of the controller die, anysuch splinter 52 is suspended well above the closest electrical contact surface of thedie attach paddle 14, and thus it is incapable of producing a current path to the dieattach paddle 14. Accordingly, this potential cause of IC package failure is eliminated. - As further shown by
FIG. 5 , the intersectingchannels film void 56 produced by an ejector pin would be located. Thus, there is no electrical path provided between thebottom surface 36 of the controller die 34 and the die attachpaddle 14. Thus, this potential failure causing defect is also obviated by the die paddle half etching configuration shown inFIG. 6 . - Various alternative channel configurations could be provided. For example, one of the two
channels ejector pin void 56 is rarely encountered, the etching ofchannels peripheral recesses FIGS. 5 and 6 in any situation where either of the above discussed defects is a possibility. - It will be understood by those skilled in the art that the above-described die attach paddle construction has a number of advantages. No change in package form, fit and function occurs as a result of the half etched channels. The silicon thickness of the controller die 34 and power die 22 and the mold compound thickness are unchanged. All the materials used to make the package remain unchanged. Also, there is no change of in the process flow that is used to make this
package 110 as compared to the process flow for making thepackage 10. - There is no additional cost associated with making the
package 110 illustrated inFIG. 5 as compared to the cost ofpackage 10 illustrated inFIGS. 1 and 3 . The only additional features of thepackage 110 are the half etch channels on the die attachpaddle 14. Thesechannels 62, etc., are typically etched by a lead frame supplier at the same cost as that for forming the lead frame shown inFIG. 1 , since the leadframe etching processes for thepackage 10 ofFIG. 1 and thepackage 110 are both a one mask process. Again, this configuration solves the problems of electrical leakage failure between the controller die and the die attach paddle due to silicon splinters in the die attach film and/or due to a central hole in the die attach film produced by a die ejector pin. -
FIG. 7 is a flow chart illustrating a method of making an integrated circuit die package. The method includes forming a lead frame having a die attach paddle portion surrounded by a plurality of lead portions as shown at 202. The method also includes forming at least one recessed portion in the die paddle portion in a region thereof adapted to receive a first die, as shown atblock 204. - Certain methods and structures for eliminating short circuits in an integrated circuit die package have been expressly disclosed in detail herein. Alternative embodiments of such expressly described structures and methods will become obvious to those skilled in the art after reading this disclosure. It is intended that the appended claims be construed broadly so as to cover such alternative embodiments, except as limited by the prior art.
Claims (10)
1-20. (canceled)
21. A method of making an integrated circuit die package comprising:
forming a leadframe having a die attach paddle portion surrounded by a plurality of lead portions; and
forming at least two middle channels underlying in said die attach paddle portion in a region thereof adapted to receive a first die.
22. The method of claim 21 further comprising mounting said first die on said die attach paddle portion of said leadframe in at least partial overlying relationship with said at least two middle channels.
23. The method of claim 22 wherein said mounting said first die comprises mounting a controller die with a layer of nonconductive die attach material.
24. The method of claim 21 wherein said forming at least two middle channels comprises forming a plurality of channels in said die attach paddle portion that define a plurality of island portions in said die attach paddle portion.
25. The method of claim 24 further comprising attaching a controller die to said plurality of island portions with a layer of nonconductive material.
26. The method of claim 25 further comprising attaching a power die to said die attach paddle portion with a layer of conductive material.
27. The method of claim 24 further comprising filling said plurality of channel portions with mold compound.
28. The method of claim 24 wherein said forming a plurality of channels comprises etching half etch channels on the die attach paddle.
29. The method of claim 28 wherein said etching uses a one mask process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US14/941,865 US9620388B2 (en) | 2013-08-23 | 2015-11-16 | Integrated circuit package fabrication with die attach paddle having middle channels |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US13/974,323 US9202778B2 (en) | 2013-08-23 | 2013-08-23 | Integrated circuit package with die attach paddle having at least one recessed portion |
US14/941,865 US9620388B2 (en) | 2013-08-23 | 2015-11-16 | Integrated circuit package fabrication with die attach paddle having middle channels |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
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US13/974,323 Division US9202778B2 (en) | 2013-08-23 | 2013-08-23 | Integrated circuit package with die attach paddle having at least one recessed portion |
US13/974,323 Continuation-In-Part US9202778B2 (en) | 2013-08-23 | 2013-08-23 | Integrated circuit package with die attach paddle having at least one recessed portion |
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US20160071743A1 true US20160071743A1 (en) | 2016-03-10 |
US9620388B2 US9620388B2 (en) | 2017-04-11 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170098597A1 (en) * | 2014-10-22 | 2017-04-06 | Nxp Usa, Inc. | Die attachment for packaged semiconductor device |
US9978613B1 (en) | 2017-03-07 | 2018-05-22 | Texas Instruments Incorporated | Method for making lead frames for integrated circuit packages |
CN110783303A (en) * | 2018-07-31 | 2020-02-11 | 德州仪器公司 | Lead frame for die |
US20200135632A1 (en) * | 2018-10-24 | 2020-04-30 | Texas Instruments Incorporated | Die isolation on a substrate |
US11114387B2 (en) | 2017-02-15 | 2021-09-07 | Industrial Technology Research Institute | Electronic packaging structure |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9892999B2 (en) * | 2016-06-07 | 2018-02-13 | Globalfoundries Inc. | Producing wafer level packaging using leadframe strip and related device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4595945A (en) * | 1983-10-21 | 1986-06-17 | At&T Bell Laboratories | Plastic package with lead frame crossunder |
US8481368B2 (en) * | 2008-03-31 | 2013-07-09 | Alpha & Omega Semiconductor, Inc. | Semiconductor package of a flipped MOSFET and its manufacturing method |
TWI420630B (en) * | 2010-09-14 | 2013-12-21 | Advanced Semiconductor Eng | Semiconductor package structure and semiconductor package process |
KR101354894B1 (en) * | 2011-10-27 | 2014-01-23 | 삼성전기주식회사 | Semiconductor package and method for manufacturing the same and semiconductor package module having the same |
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2015
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170098597A1 (en) * | 2014-10-22 | 2017-04-06 | Nxp Usa, Inc. | Die attachment for packaged semiconductor device |
US10217698B2 (en) * | 2014-10-22 | 2019-02-26 | Nxp Usa, Inc. | Die attachment for packaged semiconductor device |
US11114387B2 (en) | 2017-02-15 | 2021-09-07 | Industrial Technology Research Institute | Electronic packaging structure |
US9978613B1 (en) | 2017-03-07 | 2018-05-22 | Texas Instruments Incorporated | Method for making lead frames for integrated circuit packages |
US10079162B1 (en) | 2017-03-07 | 2018-09-18 | Texas Instruments Incorporated | Method for making lead frames for integrated circuit packages |
CN110783303A (en) * | 2018-07-31 | 2020-02-11 | 德州仪器公司 | Lead frame for die |
US20200135632A1 (en) * | 2018-10-24 | 2020-04-30 | Texas Instruments Incorporated | Die isolation on a substrate |
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