JP2018056310A - Resin encapsulation mold, and method of manufacturing semiconductor device using the same - Google Patents

Resin encapsulation mold, and method of manufacturing semiconductor device using the same Download PDF

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JP2018056310A
JP2018056310A JP2016190178A JP2016190178A JP2018056310A JP 2018056310 A JP2018056310 A JP 2018056310A JP 2016190178 A JP2016190178 A JP 2016190178A JP 2016190178 A JP2016190178 A JP 2016190178A JP 2018056310 A JP2018056310 A JP 2018056310A
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die pad
resin
mold
sealed
sealing
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康郎 照井
Yasuro Terui
康郎 照井
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Ablic Inc
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Ablic Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a resin encapsulation mold capable of suppressing generation of flash burrs on a rear face of a die pad.SOLUTION: On a rear face of a die pad 3, a projection 4 is provided at its outer peripheral part. On an upper surface of a resin encapsulation lower mold 1, that is, on a bottom face of an encapsulation region 11, a convex part 2 whose area is smaller than a part surrounded by the projection 4 on the rear face of the die pad, and whose height is the same as a height of the projection 4 is provided. Although a push-down stress is applied to a semiconductor chip mounting surface of the die pad and the mounted semiconductor chip by a molding pressure at resin encapsulation, the convex part provided on the resin encapsulation lower mold 1 supports the die pad, and thus, deformation of the die pad, intrusion of a resin caused by the deformation to between the rear face of the die pad and the mold, and a stress to the semiconductor chip mounted on the die pad, can be prevented.SELECTED DRAWING: Figure 1

Description

本発明は、半導体チップを搭載するダイパッドの裏面をモールド樹脂から露出させるタイプの半導体装置の製造方法及びその製造設備としての樹脂封止金型に関する。   The present invention relates to a method for manufacturing a semiconductor device in which a back surface of a die pad on which a semiconductor chip is mounted is exposed from a mold resin, and a resin-sealed mold as a manufacturing facility thereof.

半導体装置は、一般的に、半導体チップを搭載するダイパッドと信号の経路となるリードを含むリードフレームのダイパッド部に半導体チップを搭載し、半導体チップ上の電極パットとリードを金、銅、アルミ等のワイヤで接続した後に、半導体チップやダイパッド、ワイヤ、リードをトランスファモールドにより樹脂封止するプロセスで作られる。近年半導体チップの高集積化、高機能化により消費電力が増加、それに伴い半導体チップからの発熱量も増加傾向にある為、半導体装置の高放熱化が求められている。高放熱化のための手法の一つとしてダイパッドの裏面を樹脂封止体の外部に露出させるものがある。   In general, a semiconductor device has a semiconductor chip mounted on a die pad portion of a lead frame including a die pad on which the semiconductor chip is mounted and a lead serving as a signal path, and the electrode pad and the lead on the semiconductor chip are made of gold, copper, aluminum, or the like. After connecting with a wire, the semiconductor chip, die pad, wire, and lead are made by a resin sealing process using a transfer mold. In recent years, power consumption has increased due to higher integration and higher functionality of semiconductor chips, and the amount of heat generated from the semiconductor chips has been increasing accordingly. Therefore, higher heat dissipation of semiconductor devices is required. One technique for increasing heat dissipation is to expose the back surface of the die pad to the outside of the resin sealing body.

このタイプの半導体装置を形成する場合には、トランスファモールドの際に封止されるダイパッドの裏面が、封止用の金型の上面に接触する状態で設置され、その後金型内に封止用のモールド樹脂が所定の条件で注入される。   When forming this type of semiconductor device, the back surface of the die pad that is sealed during transfer molding is placed in contact with the top surface of the mold for sealing, and then sealed in the mold. The mold resin is injected under predetermined conditions.

樹脂封止の際にダイパット裏面と封止用の金型の間の隙間から樹脂が入り込み、露出させようとするダイパット裏面の上に薄いバリであるフラッシュバリとして付着する事があるが、このバリは以降の工程で脱落して不具合の原因となることがある。またダイパッド裏面の露出された領域は、半導体装置を基板上に実装する際に、半導体装置と基板との間の電気的接続の経路となるとともに、半導体チップから発生する熱を、基板を介して放熱する経路として用いられることが多い。この場合、バリによって半導体装置と基板との間の電気的、熱的な接続が妨げられる事になるので、バリの防止やバリが発生した場合の除去が望まれる。   During resin sealing, the resin may enter through the gap between the back surface of the die pad and the mold for sealing, and may adhere to the back surface of the die pad to be exposed as a thin flash burr. May drop out in subsequent processes and cause problems. Further, the exposed area on the back surface of the die pad serves as a path for electrical connection between the semiconductor device and the substrate when the semiconductor device is mounted on the substrate, and heat generated from the semiconductor chip is transmitted through the substrate. Often used as a heat dissipation path. In this case, since the electrical and thermal connection between the semiconductor device and the substrate is hindered by the burr, it is desired to prevent the burr and to remove it when the burr occurs.

この問題を解消するために、ダイパッドの露出部の外周に突出壁を設け、それにより樹脂封止時のダイパッド裏面と樹脂封止金型の接触面の面圧を上げて樹脂の侵入を防ぐ技術が開示されている(例えば、特許文献1参照)。   In order to solve this problem, a protruding wall is provided on the outer periphery of the exposed part of the die pad, thereby increasing the surface pressure of the back surface of the die pad and the contact surface of the resin sealing mold during resin sealing to prevent the resin from entering. Is disclosed (for example, see Patent Document 1).

特開2008−270661号公報JP 2008-270661 A

しかしながら、上記従来技術においても樹脂封止時にダイパッド裏面と樹脂封止金型の接触面との間に空隙が生じる。その為、封止時の樹脂の注入圧によりダイパッドの歪みが発生しダイパッド裏面と樹脂封止金型の密着が損なわれる為、両者の隙間に樹脂バリが発生するという問題が生じる。また、ダイパットの歪みにより搭載された半導体チップに応力が加わり、半導体チップの電気特性の変動や破損の要因となりうる。   However, even in the above prior art, a gap is generated between the back surface of the die pad and the contact surface of the resin sealing mold during resin sealing. For this reason, distortion of the die pad occurs due to the injection pressure of the resin at the time of sealing, and the adhesion between the back surface of the die pad and the resin sealing mold is impaired. In addition, stress is applied to the semiconductor chip mounted due to the distortion of the die pad, which can cause fluctuations or breakage of electrical characteristics of the semiconductor chip.

本発明は、これら不具合を解決するための樹脂封止金型およびそれを用いた半導体装置の製造方法を提供することを課題とするものである。   It is an object of the present invention to provide a resin-sealed mold for solving these problems and a method for manufacturing a semiconductor device using the same.

上記課題解決のために、本発明では以下の手段を用いた。
まず、半導体チップを搭載するダイパッドの裏面の外周部に突出部を設け、前記ダイパッドの裏面が封止樹脂から露出する半導体装置を成形する樹脂封止金型において、前記ダイパッドの突出部が接触する第1ダイパッド設置領域を有し、周囲を前記第1ダイパッド設置領域に囲まれ上面が前記ダイパッドと接する凸部を備える第1の金型と、前記第1の金型と対となり、封止領域を成す第2の金型と、を備えることを特徴とする樹脂封止金型とした。
In order to solve the above problems, the following means are used in the present invention.
First, a protrusion is provided on the outer peripheral portion of the back surface of a die pad on which a semiconductor chip is mounted, and the protrusion of the die pad contacts in a resin-sealed mold for molding a semiconductor device in which the back surface of the die pad is exposed from the sealing resin. A first mold having a first die pad installation area, a periphery of which is surrounded by the first die pad installation area and having a convex portion whose upper surface is in contact with the die pad, and a pair of the first mold and a sealing area And a second mold that forms a resin-sealed mold.

上記のように、ダイパッドが設置される金型上に、ダイパッド裏面突出部に囲まれ且つ高さが突出部以下の凸部を設ける事によって、金型上にリードフレームを設置した際に金型上の凸部がダイパッド裏面を支え、樹脂圧を受けたダイパッドの変形を抑制する。これにより樹脂封止時にダイパッドが封止金型上に安定して戴置される為、ダイパッド裏面への樹脂の侵入やダイパッドの変形に伴う半導体チップへの応力を防ぐ事が可能となる。
そして、手段を用いることで、放熱板裏面のフラッシュバリ発生が抑制された半導体装置を提供する事が可能となる。
As described above, when the lead frame is placed on the mold, the mold is surrounded by the die pad back surface protruding portion and the height is not more than the protruding portion. The upper convex portion supports the back surface of the die pad and suppresses deformation of the die pad that receives resin pressure. As a result, the die pad is stably placed on the sealing mold at the time of resin sealing, so that it is possible to prevent stress on the semiconductor chip due to resin intrusion into the back surface of the die pad and deformation of the die pad.
By using the means, it is possible to provide a semiconductor device in which the occurrence of flash burrs on the back surface of the heat sink is suppressed.

本発明の樹脂封止金型の第1の実施例を示す断面図である。It is sectional drawing which shows the 1st Example of the resin sealing metal mold | die of this invention. リードフレームのIC搭載面側の斜視図である。It is a perspective view of the IC mounting surface side of the lead frame. リードフレームのダイパッド裏面側の斜視図である。It is a perspective view of the die pad back surface side of a lead frame. 本発明の樹脂封止下金型の凸部拡大斜視図である。It is a convex-part enlarged perspective view of the resin-sealed lower mold of the present invention. 本発明の樹脂封止下金型の第2の実施例を示す断面図である。It is sectional drawing which shows the 2nd Example of the metal mold | die under resin sealing of this invention. 本発明の樹脂封止下金型の第3の実施例を示す断面図である。It is sectional drawing which shows the 3rd Example of the metal mold | die under resin sealing of this invention.

以下、本発明を実施するための形態について図面に基づいて説明する。
図1は、本発明の樹脂封止金型の第1の実施例を示す断面図である。
図1は、上下1対の樹脂封止金型1、9の間にリードフレームをクランプした状態を示している。リードフレームの一部であるダイパッド3の上には半導体チップ6がダイボンドされ、ワイヤ7の一端は半導体チップ6上の電極パッドと接続し、ワイヤ7の他端はリード5と接続している。リード5は樹脂封止上金型9と樹脂封止下金型1によって挟まれ固定されている。半導体装置を構成する樹脂の形状は、樹脂封止上金型9と樹脂封止下金型1によって定まる樹脂封止領域10により決定される。概ね、樹脂封止下金型1は樹脂封止領域10の下半分を決定し、樹脂封止上金型9は樹脂封止領域10の上半分を決定している。
Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.
FIG. 1 is a cross-sectional view showing a first embodiment of a resin-sealed mold according to the present invention.
FIG. 1 shows a state in which a lead frame is clamped between a pair of upper and lower resin-sealing molds 1 and 9. The semiconductor chip 6 is die-bonded on the die pad 3 which is a part of the lead frame, one end of the wire 7 is connected to the electrode pad on the semiconductor chip 6, and the other end of the wire 7 is connected to the lead 5. The lead 5 is sandwiched and fixed between a resin-encapsulated upper mold 9 and a resin-encapsulated lower mold 1. The shape of the resin constituting the semiconductor device is determined by the resin sealing region 10 determined by the resin sealing upper mold 9 and the resin sealing lower mold 1. In general, the resin-sealed lower mold 1 determines the lower half of the resin-sealed area 10, and the resin-sealed upper mold 9 determines the upper half of the resin-sealed area 10.

ダイパッド3の裏面にはその外周部に突出部4が設けられている。一方樹脂封止下金型1の上面に設けられた、樹脂封止領域10の底面を決定する領域には、面積が前記ダイパッド裏面の突出部4で囲まれた部分より小さく、突出部4と同一の高さを有する凸部2が設けられている。したがって、樹脂封止下金型1の凸部2はダイパッド3の裏面の突出部4の内側に、はまり込み、ダイパッド3を外周部の内側において裏面から支えることになる。   On the back surface of the die pad 3, a protrusion 4 is provided on the outer periphery thereof. On the other hand, the area provided on the upper surface of the resin-encapsulated lower mold 1 that determines the bottom surface of the resin sealing area 10 has a smaller area than the area surrounded by the protrusion 4 on the back surface of the die pad. Protrusions 2 having the same height are provided. Therefore, the convex part 2 of the resin-encapsulated lower mold 1 fits inside the protruding part 4 on the back surface of the die pad 3 and supports the die pad 3 from the back surface inside the outer peripheral part.

リードフレームと金型をこのような構成として樹脂封止すると、樹脂封止領域10に注入された樹脂はダイパッド3と樹脂封止下金型1との間に侵入するが、樹脂の侵入は、ダイパッド3の裏面の突出部4の内側に樹脂封止下金型1の凸部2がないことで作られる僅かな隙間を充填した時点で停止する。またこの時、樹脂の成型圧により、ダイパッドのIC搭載面や搭載されているICに対し押し下げの方向に応力がかかるが、樹脂封止下金型1に設けられた凸部がダイパッドを支える為、ダイパッドの変形とそれによるダイパット裏面と金型の間への樹脂の侵入やダイパットに搭載されている半導体チップへの応力を防ぐ事が可能になる。したがって、半導体チップへ加わる応力を抑制しながら、ダイパット裏面の表面に薄いバリであるフラッシュバリが形成されるのを防ぐことが可能となる。   When the lead frame and the mold are resin-sealed as described above, the resin injected into the resin-sealed region 10 enters between the die pad 3 and the resin-sealed lower mold 1. The process stops when a small gap created by the absence of the convex portion 2 of the resin-sealed lower mold 1 inside the protruding portion 4 on the back surface of the die pad 3 is filled. At this time, the resin molding pressure causes stress in the direction of pressing down the IC mounting surface of the die pad and the mounted IC, but the convex portion provided in the resin-sealed lower mold 1 supports the die pad. It becomes possible to prevent the deformation of the die pad and the invasion of the resin between the back surface of the die pad and the die and the stress on the semiconductor chip mounted on the die pad. Therefore, it is possible to prevent the formation of a flash burr which is a thin burr on the surface of the back surface of the die pad while suppressing the stress applied to the semiconductor chip.

図2は、リードフレームの斜視図である。ダイパッド3の対向する2辺は吊りリード8によって支持され、ダイパッドはダウンセットされている。また、ダイパッドに近接するリード5は吊りリード8と同じ高さに保たれている。ダイパッド3の上には半導体チップ6が載置され、半導体チップ6とリード5とがワイヤ7を介して電気的に接続されている。このような形状のリードフレームを、図1に示したように、上下の金型1、9の間に挿入すると、リード5が金型の間に挟まれ、吊りリード8がダイパッド3を下金型1上に押さえ付ける役目を果たすことになる。   FIG. 2 is a perspective view of the lead frame. Two opposing sides of the die pad 3 are supported by the suspension leads 8, and the die pad is set down. Further, the lead 5 adjacent to the die pad is kept at the same height as the suspension lead 8. A semiconductor chip 6 is placed on the die pad 3, and the semiconductor chip 6 and the leads 5 are electrically connected via wires 7. When the lead frame having such a shape is inserted between the upper and lower molds 1 and 9 as shown in FIG. 1, the lead 5 is sandwiched between the molds, and the suspension lead 8 lowers the die pad 3 from the lower mold. It plays the role of pressing onto the mold 1.

図3は、本発明のリードフレームのダイパッド裏面側からの斜視図である。リードフレームのダイパッド3裏面の外周に沿って突出部4が設けられている。
図4は、本発明の樹脂封止下金型の凸部拡大斜視図である。(a)は平面視的に円形の凸部、(b)は矩形の凸部を示す例である。
FIG. 3 is a perspective view from the back side of the die pad of the lead frame of the present invention. A protrusion 4 is provided along the outer periphery of the back surface of the die pad 3 of the lead frame.
FIG. 4 is an enlarged perspective view of a convex portion of the resin-sealed lower mold according to the present invention. (A) is an example which shows a circular convex part in planar view, (b) is a rectangular convex part.

図4(a)に示すように、樹脂封止下金型1には封止領域の下半分を決定する凹部が設けられ、凹部を構成している底面の中央部には、ダイパッド設置領域11が設けられ、その内側には一段高くなった円形の凸部2が存在する。凸部2はその平面積がダイパッド外周の突出部4より小さく、突出部の内側に入り込む。また、その高さは突出部4と同一である。一般に半導体装置が矩形の外形であるため、図4(b)のように、凸部2を矩形とすることでも構わない。   As shown in FIG. 4A, the resin-sealed lower mold 1 is provided with a recess for determining the lower half of the sealing area, and a die pad installation area 11 is provided at the center of the bottom surface forming the recess. Is provided, and a circular convex portion 2 that is one step higher is present inside. The convex part 2 has a smaller plane area than the protrusion 4 on the outer periphery of the die pad, and enters the inside of the protrusion. The height is the same as that of the protrusion 4. Since the semiconductor device generally has a rectangular outer shape, the convex portion 2 may be rectangular as shown in FIG.

図5は、本発明の樹脂封止金型の第2の実施例を示す断面図である。
樹脂封止下金型1底面の凸部全体を上下に可動する突き出しピン12としている。この突き出しピン12の先端は通常時樹脂封止下金型1上に設置されたダイパット裏面と接する位置に有る。突き出しピン12の先端の平面形状はダイパッド設置領域11の内側に入る大きさであることが必要である。リードフレームの樹脂封止が完了し金型から取り出される際に、上に移動しダイパッドを介して半導体装置の樹脂ボディを金型から突き出す働きをする。樹脂ボディを直接押す為、外部リードを押しての突き出し等に比較し金型からの離型ストレスを低減する事ができる。
FIG. 5 is a cross-sectional view showing a second embodiment of the resin-sealed mold of the present invention.
The entire projecting portion on the bottom surface of the resin-sealed lower mold 1 is a protruding pin 12 that can move up and down. The tip of the protruding pin 12 is in a position in contact with the back surface of the die pad installed on the lower mold 1 with resin sealing. The planar shape of the tip of the protrusion pin 12 needs to be large enough to enter the inside of the die pad installation area 11. When the resin sealing of the lead frame is completed and taken out from the mold, it moves upward and functions to protrude the resin body of the semiconductor device from the mold through the die pad. Since the resin body is pressed directly, it is possible to reduce the release stress from the mold compared to the protrusion by pressing the external lead.

図6は、本発明の半導体製造方法の第3の実施例を示す断面図である。
樹脂封止下金型1底面の凸部2の内部に、上下に可動する突き出しピン12を内包している。即ち、凸部の上面の一部が突き出しピン12の先端により占められることになる。このピンは、第2の実施例と同じく半導体装置の樹脂封止が完了し金型から取り出される際に、上に移動しダイパッドを介して半導体装置の樹脂ボディを金型から突き出す働きをする。
FIG. 6 is a cross-sectional view showing a third embodiment of the semiconductor manufacturing method of the present invention.
Inside the convex part 2 on the bottom surface of the resin-sealed lower mold 1, a protruding pin 12 that moves up and down is included. That is, a part of the upper surface of the convex portion is occupied by the tip of the protruding pin 12. When the resin sealing of the semiconductor device is completed and the pin is taken out from the die, the pin moves upward and projects the resin body of the semiconductor device from the die via the die pad as in the second embodiment.

1 樹脂封止下金型
2 凸部
3 ダイパッド
4 ダイパッド突出部
5 リード
6 半導体チップ
7 ワイヤ
8 吊りリード
9 樹脂封止上金型
10 樹脂封止領域
11 ダイパッド設置領域
12 突き出しピン
DESCRIPTION OF SYMBOLS 1 Resin sealing lower metal mold 2 Convex part 3 Die pad 4 Die pad protrusion part 5 Lead 6 Semiconductor chip 7 Wire 8 Hanging lead 9 Resin sealing upper metal mold 10 Resin sealing area 11 Die pad installation area 12 Extrusion pin

Claims (6)

半導体チップを搭載するダイパッドの裏面の外周部に突出部を有し、前記ダイパッドの裏面が封止樹脂から露出する半導体装置を、前記ダイパッドがリードフレームに固定された状態で成形する樹脂封止金型において、
樹脂封止領域の下半分を決定する凹部と、前記凹部の中央部に設けられた前記ダイパッドの突出部が接触するダイパッド設置領域と、周囲を前記ダイパッド設置領域に囲まれ上面が前記ダイパッドと接する凸部を備える第1の金型と、
前記第1の金型と対となり、前記樹脂封止領域の上半分を決定する第2の金型と、
を備えることを特徴とする樹脂封止金型。
A resin-sealed metal for forming a semiconductor device having a protrusion on the outer periphery of the back surface of a die pad on which a semiconductor chip is mounted and the back surface of the die pad being exposed from a sealing resin while the die pad is fixed to a lead frame In the mold,
A recess that determines the lower half of the resin sealing area, a die pad installation area that contacts the protrusion of the die pad provided at the center of the recess, and an upper surface that is surrounded by the die pad installation area and is in contact with the die pad A first mold having a convex portion;
A second mold that pairs with the first mold and determines the upper half of the resin-encapsulated region;
A resin-sealing mold comprising:
前記凸部は、可動式であって、樹脂封止された前記リードフレームを前記第1の金型から離す突き出しピンであることを特徴とする請求項1記載の樹脂封止金型。   2. The resin-sealed mold according to claim 1, wherein the convex part is a movable pin, and is a protruding pin that separates the resin-sealed lead frame from the first mold. 3. 前記凸部の中に樹脂封止された前記リードフレームを前記第1の金型から離すための可動式突き出しピンをさらに備えることを特徴とする請求項1記載の樹脂封止金型。   2. The resin-sealed mold according to claim 1, further comprising a movable protruding pin for separating the lead frame resin-sealed in the convex portion from the first mold. 前記凸部の平面形状が円形であることを特徴とする請求項1乃至請求項3のいずれか1項記載の樹脂封止金型。   The resin-sealed mold according to any one of claims 1 to 3, wherein a planar shape of the convex portion is circular. 前記凸部の平面形状が矩形であることを特徴とする請求項1乃至請求項3のいずれか1項記載の樹脂封止金型。 The resin-sealed mold according to any one of claims 1 to 3, wherein a planar shape of the convex portion is a rectangle. 半導体チップを搭載するダイパッドの裏面の外周部に突出部を有し、前記ダイパッドの裏面が封止樹脂から露出する半導体装置の製造方法において、
前記ダイパッドの突出部が接触するダイパッド設置領域を有し、周囲を前記ダイパッド設置領域に囲まれ、上面が前記ダイパッドと接する凸部を備える第1の金型と、前記第1の金型と対となり、封止領域を決定する第2の金型と、を準備する工程と、
前記第1および第2の金型に、前記半導体チップが前記ダイパッドに搭載されたリードフレームをクランプすると同時に前記ダイパッドの裏面に前記凸部を接触させる工程と、
前記第1および第2の金型が決定する前記封止領域に前記封止樹脂を注入する工程と、
前記封止樹脂が前記ダイパッドと前記凸部との間に侵入して充填した後、侵入が停止する工程と、
樹脂封止された前記リードフレームを前記第1および第2の金型から取り出す工程と、
を有することを特徴とする半導体装置の製造方法。
In a manufacturing method of a semiconductor device having a protrusion on an outer peripheral portion of a back surface of a die pad on which a semiconductor chip is mounted, wherein the back surface of the die pad is exposed from a sealing resin.
A first die having a die pad placement region that contacts the protruding portion of the die pad, surrounded by the die pad placement region, and having an upper surface that is in contact with the die pad; and the first die A step of preparing a second mold for determining a sealing region;
Clamping the lead frame on which the semiconductor chip is mounted on the die pad to the first and second molds and simultaneously bringing the convex portion into contact with the back surface of the die pad;
Injecting the sealing resin into the sealing region determined by the first and second molds;
A step of stopping the intrusion after the sealing resin has intruded between the die pad and the convex portion and filled, and
Removing the resin-sealed lead frame from the first and second molds;
A method for manufacturing a semiconductor device, comprising:
JP2016190178A 2016-09-28 2016-09-28 Resin encapsulation mold, and method of manufacturing semiconductor device using the same Pending JP2018056310A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019182022A1 (en) 2018-03-23 2019-09-26 日本製鉄株式会社 Non-oriented electromagnetic steel sheet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019182022A1 (en) 2018-03-23 2019-09-26 日本製鉄株式会社 Non-oriented electromagnetic steel sheet

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