US20140367660A1 - Light-emitting device, display apparatus, and illumination apparatus - Google Patents

Light-emitting device, display apparatus, and illumination apparatus Download PDF

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US20140367660A1
US20140367660A1 US14/294,940 US201414294940A US2014367660A1 US 20140367660 A1 US20140367660 A1 US 20140367660A1 US 201414294940 A US201414294940 A US 201414294940A US 2014367660 A1 US2014367660 A1 US 2014367660A1
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light
layer
reflective interface
emitting layer
emitting
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Toshihiro Fukuda
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Sony Corp
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Sony Corp
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Publication of US20140367660A1 publication Critical patent/US20140367660A1/en
Priority to US15/970,365 priority Critical patent/US10461278B2/en
Priority to US16/589,862 priority patent/US10930889B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H01L51/5271—
    • H01L51/5275—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes

Definitions

  • the present disclosure relates to a light-emitting device, and a display apparatus and an illumination apparatus using the light-emitting device.
  • Organic electroluminescence devices have attracted attention as light-emitting devices capable of emitting high luminance light at a low voltage DC and have been actively researched and developed.
  • An organic EL device has a structure in which an organic layer including a light-emitting layer which has a thickness of typically, several tens of nanometers to several hundreds of nanometers is interposed between a reflective electrode and a translucent electrode. Light emitted from the light-emitting layer is extracted to the outside, and an attempt to improve the luminous efficiency of the organic EL device using light interference in a device structure has been made.
  • an organic EL device having a stacked structure (so-called a tandem structure) in which plural light-emitting layers are stacked through a connection layer so as to connect the light-emitting layers to each other in series is well-known, and an arbitrary number of light-emitting layers can be stacked. For example, by stacking a blue light-emitting layer which emits blue light, a green light-emitting layer which emits green light, and a. red light-emitting layer which emits red light, white light can be emitted as a combined light of blue light, green light, and red light.
  • An organic EL device having such a configuration is disclosed in, fbr example, Japanese Unexamined Patent Application Publication No. 2011-159432.
  • the organic EL device disclosed in Japanese Unexamined Patent Application Publication No. 2011-159432 includes:
  • the viewing angle characteristics can be improved by additionally providing a fourth reflective interface in addition to the first, second, and third reflective interfaces.
  • a fourth reflective interface in addition to the first, second, and third reflective interfaces.
  • Japanese Unexamined Patent Application Publication No. 2011-159432 is extremely useful for flattening characteristics of the interference filter formed by the first reflective interface, the second reflective interface, and the third reflective interface. However, it was found that the flattening of the characteristics of the interference filter alone was not sufficient to further increase color gamut. Japanese Unexamined. Patent Application Publication No. 2011-459432 does not describe any countermeasures against the above-described problems.
  • a light-emitting device including:
  • the optical distance is also called an optical path length and typically refers to, when light travels through a medium having a refractive index n 00 by a distance (physical distance) D 00 , a value of n 00 ⁇ D 00 .
  • a light-emitting device including:
  • a display apparatus obtained by arranging the plural light-emitting devices according to the first or second embodiment in a two-dimensional matrix.
  • an illumination apparatus including the light-emitting device according to the first or second embodiment.
  • an interference filter is formed by the first reflective interface, the second reflective interface, the third reflective interface, and the fourth reflective interface, and a condition under which light rays are reinforced in the interference filter is achieved by satisfying the expressions (1) and (2).
  • a light transmittance of the interference filter can be increased in either or both of a narrow wavelength region corresponding to light emitted from the first light-emitting layer and a narrow wavelength region corresponding to light emitted from the second light-emitting layer.
  • color gamut can be increased, and a viewing-angle dependency of luminance and chromaticity with respect to light of a single color or a combined color of two or more different colors in the visible wavelength region can be greatly decreased.
  • the first reflective interface, the second reflective interface, the third reflective interface, and the fourth reflective interface are arranged so as to satisfy the predetermined conditions, an interference filter in which a light transmittance curve is more flat in a wide wavelength region can be obtained. Further, a light transmittance of the interference filter can be increased in either or both of a narrow wavelength region corresponding to light emitted from the first light-emitting layer and a narrow wavelength region corresponding to light emitted from the second light-emitting layer.
  • color gamut can be increased, and a viewing-angle dependency of luminance and chromaticity with respect to light of a single color or a combined color of two or more different colors in the visible wavelength region can be greatly decreased.
  • the effects described in this specification are merely exemplary, and the content of the present disclosure is not limited thereto. In addition, additional effects may be obtained.
  • FIGS. 1A and 1B are diagrams illustrating configurations of the respective layers which form light-emitting devices of Example 1 and Comparative Example 1, respectively;
  • FIG. 2 is a cross-sectional view schematically illustrating a part of a display apparatus of Example 1;
  • FIGS. 3A and 3B are graphs illustrating results of calculating light transmittances of interference filters of the light-emitting devices of Comparative Example 1 and Examples 1, respectively;
  • FIGS. 4A and 4B are a graph illustrating simulation results of a luminance change (Y/Y 0 ) in which a viewing angle is used as a parameter and a graph illustrating simulation results of a chromaticity change ( ⁇ uv) in which a viewing angle is used as a parameter, respectively, in the display apparatus of Example 1;
  • FIG. 5 is a cross-sectional view schematically illustrating a part of a display apparatus of Example 3.
  • FIG. 6 is a cross-sectional view schematically illustrating a part of an illumination apparatus of Example 4.
  • an interference filter may be formed by the first reflective interface, the second reflective interface, the third reflective interface, and the fourth reflective interface.
  • the interference filter which is formed by the first reflective interface, the second reflective interface, the third reflective interface, and the fourth reflective interface can be interchangeably used with the expression “the interference fitter having a fitter effect which is obtained by a spectral transmittance exhibited by interference due to light reflection on the first reflective interface, the second reflective interface, the third reflective interface, and the fourth reflective interface.”
  • an optical thickness t 2 of the second light-transmitting layer satisfy 0.2 ⁇ 1 ⁇ t 2 ⁇ 0.35 ⁇ 1 .
  • the optical thickness t 2 satisfy 0.8 ⁇ ( ⁇ 1 /4) ⁇ t 2 ⁇ 1.4 ⁇ ( ⁇ 1 /4).
  • the optical thickness t 2 is obtained from a product of the thickness (physical thickness) of the second light-transmitting layer and a refractive index of the second light-transmitting layer.
  • a position of the second reflective interface may be determined such that a peak position of a light transmittance of the interference filter is shifted from a peak of an emission spectrum of light emitted from the first light-emitting layer and is shifted from a peak of an emission spectrum of light emitted from the second tight-emitting layer.
  • a position of the third reflective interface may be determined such that a peak position of a light transmittance of the interference filter is shifted from a peak of an emission spectrum of light emitted from the first light-emitting layer and is shifted from a peak of an emission spectrum of light emitted from the second light-emitting layer.
  • a position of the fourth reflective interface may determined such that a peak position of a light transmittance of the interference filter is shifted from a peak of an emission spectrum of light emitted from the first light-emitting layer and is shifted from a peak of an emission spectrum of light emitted from the second light-emitting layer.
  • the interference filter can function in a wider region. The same shall be applied to the light-emitting devices according to the first embodiment.
  • a luminance at a viewing angle of 45° be decreased by 30% or lower compared to a luminance (Y 0 ) at a viewing angle of 0°.
  • a chromaticity shift ⁇ uv at a viewing angle of 45° be 0.015 or lower.
  • a metal layer having a thickness of 5 nm or less may be provided between the second light-emitting layer and the first light-transmitting layer.
  • a material forming the metal layer for example, magnesium (Mg), silver (Ag), or an alloy thereof can be used. Light emitted from the organic layer passes through the metal layer.
  • the second reflective interface, the third reflective interface, or the fourth reflective interface may include plural interfaces.
  • At least one of the first light-emitting layer and the second light-emitting layer may be a heterochromatic light-emitting layer that emits light of two or more different colors, and when it is determined that luminescent centers of the heterochromatic light-emitting layer are not at one level, a fourth light-transmitting layer may be further provided.
  • the expression “it is determined that luminescent centers of the heterochromatic light-emitting layer are not at one level” implies that, for example, the distance between a luminescent center of a first color and a luminescent center of a second color of the heterochromatic light-emitting layer is 5 nm or greater.
  • an interference filter be formed by the first reflective interface, the second reflective interface, the third reflective interface, the fourth reflective interface, and a fifth reflective interface; that the first reflective interface be the interface between the first light-emitting layer and the first electrode; that the second reflective interface be formed by the second light-emitting layer, the first light-transmitting layer, the second light-transmitting layer, the third light-transmitting layer, and the fourth light transmitting layer; and that a change of a light transmittance curve of a light ray, which is emitted from the heterochromatic light-emitting layer to the outside of the light-emitting device, in the interference filter in which a wavelength is used as a variable have the same tendency as that of a change of a light transmittance curve of another light ray, which is emitted from the heterochromatic light-emitting layer to the outside of the light-emitting device, in the interference filter in which a wavelength is used as a variable.
  • At least one of the first light-emitting layer and the second light-emitting layer may be a heterochromatic light-emitting layer that emits light of two or more different colors, and when it is determined that luminescent centers of the heterochromatic light-emitting layer are not at one level, a fourth light-transmitting layer may be further provided.
  • the fourth light-transmitting layer be further provided; and that a change of a light transmittance curve of a light ray, which is emitted from the heterochromatic light-emitting layer to the outside of the light-emitting device, in the interference filter in which a wavelength is used as a variable have the same tendency as that of a change of a light transmittance curve of another light ray, which is emitted from the heterochromatic light-emitting layer to the outside of the light-emitting device, in the interference filter in which a wavelength is used as a variable.
  • the first electrode, the organic layer, and the second electrode may be stacked in this order on a substrate (for convenience of description, also referred to as “first substrate”).
  • first substrate for convenience of description, this configuration will be referred to as “top emission type”.
  • a transparent conductive material layer having a thickness of 0.5 ⁇ m or greater, a transparent insulating layer having a thickness of 0.5 ⁇ m or greater, a resin layer having a thickness of 0.5 ⁇ m or greater, a glass layer having a thickness of 0.5 ⁇ m or greater, or an air layer having a thickness of 0.5 ⁇ m or greater may be further formed on a side of the third light-transmitting layer opposite to the second light-transmitting layer.
  • the outermost layer above the second electrode is a second substrate.
  • the second electrode, the organic layer, and the first electrode are stacked in this order on the first substrate.
  • this configuration will be referred to as “bottom emission type.”
  • a transparent conductive material layer having a thickness of 1 ⁇ m or greater, a transparent insulating layer having a thickness of 1 ⁇ m or greater, a resin layer having a thickness of 1 ⁇ m or greater, a glass layer having a thickness of 1 ⁇ m or greater, or an air layer having a thickness of 1 ⁇ m or greater may be firmed on a side of the third light-transmitting layer opposite to the second light-transmitting layer.
  • the outermost layer above the first electrode is the second substrate.
  • a phase shift ⁇ AB occurring when light is reflected by the reflective interface formed between the layers A and B can be obtained by measuring a complex refractive index (n A , k A ) of the layer A and a complex refractive index (n B ,k B ) of the layer B and performing a calculation based on these values (for example, refer to Principles of Optics, Max Born and Emil Wolf, 1974 (PERGAMON PRESS)).
  • the refractive indices of the organic layer and the respective light-transmitting layers can be measured using a spectroscopic ellipsometer.
  • the top emission type display apparatus may have a configuration in which the organic layer emits white light, and the second substrate includes a color filter.
  • the second substrate may include a light-shielding film (black matrix).
  • the bottom emission type display apparatus may have a configuration in which the organic layer emits white light, and the first substrate includes a color filter or a light-shielding film (black matrix).
  • a pixel or sub-pixel arrangement in a configuration in which one pixel (or one sub-pixel) is formed by on tight-emitting device, is not particularly limited but, for example, may be a stripe arrangement, a diagonal arrangement, a delta arrangement, and a rectangular arrangement.
  • a pixel (or sub-pixel) arrangement in a configuration in which one pixel (or one sub-pixel) is formed by plural light-emitting devices, is not particularly limited but, for example, may be a stripe arrangement.
  • examples of a material (light reflective material) forming the first electrode include metals having a high work function such as platinum (Pt), gold (Au), silver (Ag), chromium (Cr), tungsten (W), nickel (Ni), copper (Cu), iron (Fe), cobalt (Co), or tantalum (Ta); and alloys thereof (for example, an Ag—Pd—Cu alloy including silver as a major component, 0.3 mass % to 1 mass % of palladium (Pd), and 0.3 mass % to 1 mass % of copper (Cu) or an Al—Nd alloy).
  • the first electrode can be used as an anode electrode by, for example, providing an appropriate hole injection layer to improve a hole injection property.
  • the thickness of the first electrode is, for example, 0.1 ⁇ m to 1 ⁇ m.
  • a structure may also be adopted in which a transparent conductive material having a high hole injection property such as an oxide (ITO) of indium and tin or an oxide (IZO) of indium and zinc is stacked on a dielectric multi-layer film or a reflective film having a high light reflectance such as aluminum (Al).
  • the first electrode when the first electrode functions as a cathode electrode, it is preferable that a conductive material having a low work function and a high light reflectance be used.
  • the first electrode can be used as a cathode electrode by, for example, providing an appropriate electron injection layer on a conductive material having a high light reflectance, which is used as an anode electrode, to improve an electron injection property.
  • the second electrode when the second electrode functions as a cathode electrode, it is preferable that the second electrode be formed of a conductive material through which emitted light pass and which has a low work function such that electrons can be effectively injected into the organic layer.
  • the conductive material examples include metals having a low work function and alloys thereof, for example, aluminum (Al), silver (Ag), magnesium (Mg), calcium (Ca), sodium (Na), strontium (Sr), alloys of silver (Ag) and alkali metals or alkali earth metals (for example, an alloy (Mg—Ag alloy) of magnesium (Mg) and silver (Ag)), alloys (Mg—Ca alloy) of magnesium and calcium, or alloys (Al—Li alloy) of aluminum (Al) and lithium (Li).
  • an Mg—Ag alloy is preferable, and a volume ratio of magnesium to silver (Mg:Ag) is, for example, 2:1 to 30:1.
  • a volume ratio of magnesium to calcium (Mg:Ca) is, for example, 2:1 to 10:1.
  • the thickness of the second electrode is, for example, 4 nm to 50 nm, preferably 4 nm to 20 nm, and more preferably 6 nm to 12 nm.
  • the second electrode may have a stacked structure in which the above-described material layer and a so-called transparent electrode (having a thickness of for example, 3 ⁇ 10 ⁇ 8 m to 1 ⁇ 10 ⁇ 6 m) finned of for example, ITO or IZO are stacked in order from the organic layer side.
  • the thickness of the above-described material layer can be reduced to 1 nm to 4 nm.
  • the second electrode may also be formed of only the transparent electrode.
  • the second electrode when the second electrode functions as an anode electrode, it is preferable that the second electrode be firmed of a conductive material through which emitted light pass and which has a high work function.
  • the first light-transmitting layer may be formed, the second light-transmitting layer may be formed, or the third light-transmitting layer may be formed.
  • the second electrode may be provided independently of the first light-transmitting layer, the second light-transmitting layer, and the third light-transmitting layer.
  • a bus electrode (auxiliary electrode) formed of a low-resistance material such as aluminum, an aluminum alloy, silver, a silver alloy, copper, a copper alloy, gold, or a gold alloy may be provided on the second electrode to reduce the total resistance of the second electrode.
  • Examples of a method of forming the first electrode or the second electrode include combinations of an deposition method such as an electron beam deposition method, a hot filament deposition method, or a vacuum deposition method, a sputtering method, a chemical vapor deposition (CVD) method, an MOCVD method, and an ion plating method with an etching method; various printing methods such as a screen printing method, an ink jet printing method, and a metal-mask printing method; plating methods such as an electrical plating method or a non-electrolytic plating method; a lift-off method; a laser abrasion method; and a sol-gel method.
  • an deposition method such as an electron beam deposition method, a hot filament deposition method, or a vacuum deposition method, a sputtering method, a chemical vapor deposition (CVD) method, an MOCVD method, and an ion plating method with an etching method
  • various printing methods such as a screen printing method, an in
  • the first electrode or the second electrode having a desired pattern can be directly formed.
  • the first electrode or the second electrode is formed after forming the organic layer
  • a film forming method such as a vacuum deposition method, in which the energy of film forming particles is low
  • a film forming method such as a MOCVD method
  • the organic layer and these electrodes be formed without being exposed to the air from the viewpoint of preventing the organic layer from deteriorating due to moisture in the air.
  • either the first electrode or the second electrode is not necessarily patterned.
  • the display apparatus or the illumination apparatus In the display apparatus or the illumination apparatus according to the embodiment (hereinafter, these apparatuses will also be referred to as “the display apparatus or the like according to the embodiment”), plural light-emitting devices are formed on the first substrate.
  • the first substrate or the second substrate include a high strain point glass substrate, a soda-lime glass (Na 2 O.CaO.SiO 2 ) substrate, a borosilicate glass (Na 2 O.B 2 O 3 .SiO 2 ) substrate, a forsterite (2MgO.SiO 2 ) substrate, a lead glass (Na 2 O.PbO.SiO 2 ) substrate, an alkali-free glass substrate, various glass substrates on which an insulating film is formed, a fused silica glass substrate, a quartz substrate on which an insulating film is formed, a silicon substrate on which an insulating n is formed, and a substrate of an organic polymer (substrate in the form of
  • the material forming the first electrode and the material forming the second electrode may be the same as or different from each other. However, in the top emission type display apparatus, it is necessary that the second electrode be transparent to light emitted from the light-emitting devices, and in the bottom emission type display apparatus, it is necessary that the first electrode be transparent to light emitted from the fight-emitting devices.
  • Examples of the display apparatus or the like according to the embodiment include an organic electroluminescence display apparatus (abbreviated to “organic EL display apparatus”).
  • organic EL display apparatus is a color organic EL display apparatus
  • sub-pixels are formed by respective organic EL devices included in the organic EL display apparatus, as described above.
  • one pixel is formed by, for example, three kinds of sub-pixels including a red light-emitting sub-pixel which emits red light, a green light-emitting sub-pixel which emits green light, and a blue light-emitting sub-pixel which emits blue light.
  • the number of organic EL devices included in the organic EL display apparatus is N ⁇ M
  • the number of pixels is (N ⁇ M)/3.
  • the organic EL display apparatus can be used as a monitor configuring a personal computer or as a monitor incorporated into a television receiver, a mobile phone, a personal digital assistant (PDA), or a game machine.
  • the organic EL display apparatus can be applied to an electronic view finder (EVF) or a head mounted display (HMD).
  • EVF electronic view finder
  • HMD head mounted display
  • examples of the illumination apparatus according to the embodiment include a backlight unit for a liquid crystal display and an illumination apparatus including a surface emission light source.
  • the organic layer includes a light-emitting layer (for example, a light-emitting layer tbrmed of an organic luminescent material) and, specifically, may have a stacked structure in which a hole transport layer, a light-emitting layer, and an electron transport layer are stacked, a stacked structure in which a hole transport layer and a light-emitting layer also functioning as an electron transport layer are stacked, and a stacked structure in which a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer are stacked.
  • These stacked structures are called “tandem units”.
  • the organic layer may have a two-stage tandem structure in which a first tandem unit, a connection layer, and a second tandem unit are stacked or a three- or more-stage tandem structure in which three or more tandem units are stacked.
  • the organic layer which emits white light as a whole can be obtained by changing emission colors into red, green, and blue through the respective tandem units or by changing emission colors into, for example, blue and yellow through the respective tandem units.
  • Examples of a method of forming the organic layer include a physical vapor deposition (PVD) method such as a vacuum deposition method; a printing method such as a screen printing method or an ink jet printing method; a laser transfer method of irradiating a stacked structure in which a laser absorption layer and an organic layer are stacked on a transfer substrate with laser to separate the organic layer from the laser absorption layer and transfer the organic layer; and various coating methods.
  • PVD physical vapor deposition
  • a printing method such as a screen printing method or an ink jet printing method
  • a laser transfer method of irradiating a stacked structure in which a laser absorption layer and an organic layer are stacked on a transfer substrate with laser to separate the organic layer from the laser absorption layer and transfer the organic layer and various coating methods.
  • the organic layer can be obtained by, for example, using a so-called metal mask to deposit a material through an opening provided in the metal mask.
  • the organic layer may be formed on the entire surface without patterning.
  • the first electrode is provided, for example, on an interlayer dielectric.
  • This interlayer dielectric covers a light-emitting device driving portion formed on the first substrate.
  • the light-emitting device driving portion includes one or plural thin film transistors (TFT), and the TFT and the first electrode are electrically connected to each other through a contact plug provided in the interlayer dielectric.
  • TFT thin film transistor
  • Examples of a material forming the interlayer dielectric include SiO 2 -based materials such as SiO 2 , BPSG, PSG, BSG, AsSG, PbSG, SiON, spin on glass (SOG), low-melting-point glass, or glass paste; SiN-based materials; and insulating resins such as polyimide resins, novolac resins, acrylic resins, or polybenzooxazote. These materials can be appropriately used alone or in a combination of two or more kinds.
  • an existing process such as a (ND method, a coating method, a sputtering method, or various printing methods can be used.
  • the interlayer dielectric be formed of a material which is transparent to light emitted from the light-emitting devices; and that the light-emitting device driving portion be formed so as not to interfere light emitted from the light-emitting devices.
  • the light-emitting device driving portion can be provided above the first electrode.
  • an insulating or conductive protective film be provided above the organic layer.
  • the protective film be formed, particularly, using a film forming method, such as a vacuum deposition method, in which the energy of film forming particles is low or using a film forming method such as a CVD method or a MOCVD method because an effect thereof on an undercoat layer can be reduced.
  • a film forming temperature be set to normal temperature.
  • the protective film be formed under conditions where the stress of the protective film is minimized.
  • the protective film be formed without the already-formed electrodes being exposed to the air. As a result, deterioration of the organic layer caused by moisture and oxygen in the air can be prevented. Further, when the display apparatus or the like is the top emission type, it is preferable that the protective film be formed of a material through which 80% or higher of light emitted from the organic layer passes. Specifically, tier example, inorganic amorphous insulating materials such as the following materials can be used. Since such inorganic amorphous insulating materials do not form grains, a superior protective film having low water-permeability can be formed.
  • the protective film it is preferable that a material which is transparent to light emitted from the light-emitting layers, is dense, and is moisture-proof be used. More specifically, examples of the material include amorphous silicon ( ⁇ -Si), amorphous silicon carbide ( ⁇ -SiC), amorphous silicon nitride ( ⁇ -Si 1-x N x ), amorphous silicon oxide ( ⁇ -Si 1-y O y ), amorphous carbon ( ⁇ -C), amorphous silicon nitride oxide (a ⁇ SiON), and Al 2 O 3 .
  • the protective film When the protective film is formed of a conductive material, the protective film may be formed of a transparent conductive material such as ITO or IZO. At least one layer of the first light-transmitting layer, the second light-transmitting layer, and the third light-transmitting layer may be formed of the protective film.
  • Examples of a material forming the first light-transmitting layer, the second light-transmitting layer, or the third light-transmitting layer include, in addition to the above-described various materials, metal oxides such as molybdenum oxide, niobium oxide, zinc oxide, or tin oxide; and various organic materials.
  • Example 1 relates to the light-emitting devices according to the first and second embodiments and the display apparatus according to the embodiment.
  • FIG. 1A is a diagram illustrating configurations of respective layers which forms the light-emitting device of Example 1
  • FIG. 2 is a cross-sectional view schematically illustrating a part of the display apparatus of Example 1.
  • the light-emitting device 10 of Example 1, that is, the organic EL device 10 includes:
  • the light-emitting device 10 of Example 1 that is, the organic EL device 10 includes:
  • an organic EL display apparatus of Example 1 or any one of Examples 2 and 3 described below is formed by arranging such plural light-emitting devices in a two-dimensional matrix.
  • the first electrode 31 , the organic layer 33 , and the second electrode 32 are stacked in this order on a first substrate 11 . That is, specifically, two substrates are provided, the two substrates including:
  • the display apparatus of Example 1 is the top emission type display apparatus.
  • a metal layer (not illustrated) formed of magnesium (Mg), silver (Ag), or an alloy thereof and having a thickness of 5 nm or less is provided between the second light-emitting layer 35 and the first light-transmitting layer 41 (specifically, between the organic layer 33 and the second electrode 32 ), but the display apparatus is not limited to this configuration.
  • a transparent conductive material layer having a thickness of 0.5 ⁇ m or greater, a transparent insulating layer having a thickness of 0.5 ⁇ m or greater, a resin layer having a thickness of 0.5 ⁇ m or greater, a glass layer having a thickness of 0.5 ⁇ m or greater, or an air layer having a thickness of 0.5 ⁇ m or greater may be further formed on a side of the third light-transmitting layer 43 opposite to the second light-transmitting layer 42 , that is, may be further formed between the third light-transmitting layer 43 and the second substrate 12 .
  • the outermost layer above the second electrode 32 is the second substrate 12 .
  • the organic EL display apparatus of Example 1 or any one of Examples 2 and 3 described below is a high-definition display apparatus which is applied to an electronic view finder (EVF) or a head mounted display (HMD).
  • EVF electronic view finder
  • HMD head mounted display
  • the organic EL display can be applied to a large organic EL display apparatus such as a television receiver.
  • One pixel is formed by three sub-pixels including a red light-emitting sub-pixel which emits red light, a green light-emitting sub-pixel which emits green light, and a blue light-emitting sub-pixel which emits blue light.
  • the second substrate 12 may include a color filter (not illustrated).
  • the light-emitting device 10 emits white light
  • each color light-emitting sub-pixel is formed by a combination of the light-emitting device 110 emitting white light with the color filter.
  • the color filter includes a region transmitting red light, a region transmitting green light, and a region transmitting blue light.
  • a light-shielding film black matrix may be provided between color filters.
  • the number of pixels is, for example, 1920 ⁇ 1080, one light-emitting device 10 forms one sub-pixel, and the number of tight-emitting devices (specifically, organic EL devices) 10 is three times the number of pixels.
  • the display apparatus is a so-called monochrome display apparatus.
  • the first light-emitting layer 34 is a blue light-emitting layer which emits blue light
  • the second light-emitting layer 35 is a yellow light-emitting layer which emits yellow light.
  • the average values of the emission wavelengths are as shown below in Table 1.
  • an interference filter is formed by the first reflective interface RF 1 , the second reflective interface RF 2 , the third reflective interface RF 3 , and the fourth reflective interface RF 4 .
  • the first electrode 31 is used as an anode electrode, and the second electrode 32 is used as a cathode electrode.
  • the first electrode 31 is formed of a light reflective material, specifically, an Al—Nd alloy, and the second electrode 32 is formed of a transparent conductive material.
  • the first electrode 31 is formed, particularly, using a combination of a vacuum deposition method with an etching method.
  • the second electrode 32 is formed using a film forming method, such as a vacuum deposition method, in which the energy of film forming particles is low, and is not patterned.
  • the first electrode 31 included in the light-emitting device (organic EL device) 10 is provide on an interlayer dielectric 25 (more specifically, an upper interlayer dielectric 25 B) which is formed of SiON using a CVD method.
  • This interlayer dielectric 25 (more specifically, a lower interlayer dielectric 25 A) covers an organic EL device driving portion formed on the first substrate 11 .
  • the organic EL light-emitting device driving portion includes plural TFTs, and the TFT and the first electrode 31 are electrically connected through a contact plug 27 , an interconnection 26 , and a contact plug 26 A which are provided in the interlayer dielectric (more specifically, the upper interlayer dielectric 25 B).
  • the TFT includes a gate electrode 21 that is formed on the first substrate 11 , a gate insulating film 22 that is formed on the first substrate 11 and the gate electrode 21 , a source/drain region 23 that is provided on a semiconductor layer formed on the gate insulating film 22 , and a channel forming region 24 that is provided between source/drain regions 23 and corresponds to a semiconductor portion positioned above the gate electrode 21 .
  • the TFT is a bottom gate type but may be a top gate type.
  • the gate electrode 21 of the TFT is connected to a scanning circuit (not illustrated).
  • the first substrate 11 is a silicon substrate, an alkali-free glass, or a fused silica glass substrate
  • the second substrate 12 is an alkali-free glass substrate or a fused silica glass substrate.
  • the organic layer 33 has the following configuration or structure, but such a configuration or structure is exemplary and can be appropriately changed.
  • the thickness of a hole injection layer is, for example, 1 nm to 20 nm
  • the thickness of a hole transport layer is, for example, 115 nm to 100 nm
  • the thickness of a tight-emitting layer is, for example, 5 ⁇ m to 50 nm
  • the thickness of an electron transport layer is, for example, 15 ⁇ m to 200 nm.
  • a buffer layer included in the organic layer 33 is formed on the first electrode 31 .
  • the buffer layer is provided for preventing leakage and is formed of, for example, hexaazatriphenylene (HAT).
  • a hole transport layer formed of, for example, ⁇ -NPD (N,N′-di(1-naphthyl)-N,N-diphenyl-[1,1′-biphenyl]-4,4′-diamine) is formed on the buffer layer.
  • a blue light-emitting layer (thickness: 20 nm) is formed on the hole transport layer.
  • the blue light emitting layer can be obtained by depositing ADN as a host material and doping the ADN with a diaminochrysene derivative as a dopant material at a relative film thickness ratio of 5%. Further, an electron transport layer formed of BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) or the like and an electron injection layer formed of lithium fluoride LiF) or the like are formed on the blue light-emitting layer. With the above-described stacked structure, the first light-emitting layer 34 is formed.
  • a hole injection layer also functioning as a hole transport layer which is formed of ⁇ -NPD is formed on the connection layer.
  • a yellow light-emitting layer (thickness: 20 nm) which is formed of a luminescent material emitting yellow light is formed on the hole injection layer.
  • the yellow light-emitting layer can be obtained by depositing CBP as a host material and doping the CBP with a Flrpic derivative as a dopant material at a relative film thickness ratio of 10%. Further, an electron transport layer formed of BCP or the like and an electron injection layer formed of lithium fluoride (LiF) are formed on the yellow light-emitting layer. With the above-described stacked structure, the second light-emitting layer 35 is formed.
  • the light-emitting device 10 of Example 1 satisfies the above-described expressions (1) and (2) and satisfies either or both of the expressions (3-A) and (3-B). More specifically, in Example 1, the expression (3-B) is satisfied.
  • the expression (3-A) or an expression (C-1) described below a light transmittance of the interference filter can be increased in a narrow wavelength region corresponding to light emitted from the first light-emitting layer.
  • a light transmittance of the interference filter can be increased in a narrow wavelength region corresponding to light emitted from the second light-emitting layer.
  • a light transmittance of the interference filter can be increased in a narrow wavelength region corresponding to light emitted from both the first light-emitting layer and the second light-emitting layer.
  • a difference between the refractive index n 00 of the organic layer 33 and the refractive index n 01 of the first light-transmitting layer 41 is 0.15 or greater
  • a difference between the refractive index m 01 of the first light-transmitting layer 41 and the refractive index n 02 of the second light-transmitting layer 42 is 0.15 or greater
  • a difference between the refractive index n 02 of the second light-transmitting layer 42 and the refractive index n 03 of the third light-transmitting layer 43 is 0.15 or greater.
  • the optical thickness t 2 of the second light-transmitting layer is t 2 ⁇ (1/4) ⁇ 1 and satisfies 0.2 ⁇ 1 ⁇ t 2 ⁇ 0.35 ⁇ 1 and 0.8 ⁇ ( ⁇ 1 /4) ⁇ t 2 ⁇ 1.4 ⁇ ( ⁇ 1 /4).
  • a light-emitting device (light-emitting device of Comparative Example 1) is assumed in which only two layers of a first light-transmitting layer 41 and a second light-transmitting layer 42 ′ are provided on a side of the second light-emitting layer 35 opposite to the first light-emitting layer 34 in order from the second light-emitting layer side.
  • the light-emitting device of Comparative Example 1 satisfies all the expressions (1) to (6) and at least one of the expressions (7) and (8) disclosed in Japanese Unexamined Patent Application Publication No. 2011-159432.
  • n 00 , n 01 , and n 02 of the organic layer 33 , the first light-transmitting layer 41 ′, and the second light-transmitting layer 42 ′ are as shown above in Table 1, specifically, except for values of n 03 , L 14 ; and L 24 .
  • FIG. 3B illustrates results of calculating light transmittances of light (wavelength ⁇ 1 ) emitted from the first light-emitting layer 34 and light (wavelength ⁇ 2 ) emitted from the second light-emitting layer 35 in an interference filter which is formed by the first reflective interface RF 1 , the second reflective interface RF 2 , the third reflective interface RF 3 , and the fourth reflective interface RF 4 of the light-emitting device of Example 1.
  • FIG. 3B illustrates results of calculating light transmittances of light (wavelength ⁇ 1 ) emitted from the first light-emitting layer 34 and light (wavelength ⁇ 2 ) emitted from the second light-emitting layer 35 in an interference filter which is formed by the first reflective interface RF 1 , the second reflective interface RF 2 , the third reflective interface RF 3 , and the fourth reflective interface RF 4 of the light-emitting device of Example 1.
  • FIG. 3B illustrates results of calculating light transmittances of light (wavelength
  • FIGS. 3A and 3B illustrates results of calculating light transmittances of light (wavelength ⁇ 1 ) emitted from the first light-emitting layer 34 and light (wavelength ⁇ 2 ) emitted from the second light-emitting layer 35 in an interference filter which is formed by the first reflective interface RF 1 , the second reflective interface RF 2 , and the third reflective interface RF 3 of the light-emitting device of Comparative Example 1.
  • FIGS. 3A and 3B data regarding the light emitted from the first light-emitting layer 34 is illustrated by solid line “A” and data regarding the light emitted from the second light-emitting layer 35 is illustrated by solid line “B”.
  • white light can be emitted by using a blue light-emitting layer in combination.
  • the color purity of a single color of green or red which is separated from white by a color filter is low.
  • the thickness of the color filter is increased to increase color gamut, the luminous efficiency is greatly decreased, which leads to an increase in power consumption and cost.
  • a peak of the interference filter can be formed in a green wavelength region near 530 nm having high color purity by controlling the thickness of the second light-transmitting layer 42 .
  • the obtained color purity can be improved by the color filter or the like, and the color purity and the color gamut can be improved as the display apparatus.
  • an increase in the thickness of the color filter which is necessary for realizing the same level of chromaticity point as above does not occur, there are advantageous effects in terms of luminous efficiency and power consumption.
  • the reinforced green wavelength region is wide, and the spectral transmittance of the interference filter forms a large valley in a wavelength region (a region of 550 nm to 650 nm) of curve B higher than 530 nm. Therefore, when the display apparatus is seen from the front, although the chromaticity is improved, the viewing-angle dependency of the chromaticity is large.
  • Example 1 by providing the third light-transmitting layer 43 to form the fourth reflective interface RF 4 , the interference of an opposite phase to the spectral transmittance of the interference filter is generated. Therefore, as illustrated in FIG. 3B , the spectral transmittance of the interference filter is flattened (refer to a region of curve B from 550 nm to 650 nm), and a wavelength region which should be reinforced to increase color gamut is narrowed. As a result, color gamut is increased and viewing-angle characteristics are improved.
  • a position of the second reflective interface RF 2 is determined such that a peak position of a light transmittance of the interference filter is shifted from a peak of an emission spectrum of light emitted from the first light-emitting layer 34 and is shifted from a peak of an emission spectrum of light emitted from the second light-emitting layer 35 .
  • a position of the third reflective interface RF 3 is determined such that a peak position of a light transmittance of the interference filter is shifted from a peak of an emission spectrum of light emitted from the first light-emitting layer 34 and is shifted from a peak of an emission spectrum of light emitted from the second light-emitting layer 35 .
  • a position of the fourth reflective interface RF 4 is determined such that a peak position of a light transmittance of the interference filter is shifted from a peak of an emission spectrum of light emitted from the first fight-emitting layer 34 and is shifted from a peak of an emission spectrum of light emitted from the second light-emitting layer 35 . Therefore, the interference filter can function in a wider region.
  • FIG. 4B illustrates simulation results of a luminance change (Y/Y 0 ) in which a viewing angle is used as a parameter in the display apparatus using the light-emitting device of Example 1
  • FIG. 4B illustrates simulation results of a chromaticity change ( ⁇ uv) in which a viewing angle is used as a parameter in the display apparatus using the light-emitting device of Example 1.
  • Table 2 shows the values of the chromaticity and the luminous efficiency of the light-emitting devices of Example 1 and Comparative Example 1.
  • the x value is less than and the y value is greater than those of the light-emitting device of Comparative Example 1. Therefore, a more preferable chromaticity is exhibited, and the luminous efficiency is high.
  • an interference filter is formed by the first reflective interface RF 1 , the second reflective interface RF 2 , the third reflective interface RF 3 , and the fourth reflective interface RF 4 , and the expressions (1) and (2) are satisfied.
  • reflection of light rays, which are emitted from the first light-emitting layer, on the first reflective interface RF 1 is reinforced, and reflection of light rays, which are emitted from the second light-emitting layer, on the first reflective interface RF 1 is reinforced.
  • an interference filter in which a light transmittance curve is more flat in a wide wavelength region can be obtained.
  • a light transmittance of the interference filter can be increased in either or both of a narrow wavelength region corresponding to light emitted from the first light-emitting layer and a narrow wavelength region corresponding to light emitted from the second light-emitting layer.
  • monochrome chromaticity can be improved, color gamut can be increased, a white light-emitting device having superior hue and low power consumption can be provided, and a viewing-angle dependency of luminance and chromaticity with respect to light of a single color or a combined color of two or more different colors in the visible wavelength region can be greatly decreased.
  • the first reflective interface, the second reflective interface, the third reflective interface, and the fourth reflective interface are arranged so as to satisfy the predetermined conditions, an interference filter in which a light transmittance curve is more flat in a wide wavelength region can be obtained, and a white light-emitting device having superior hue and low power consumption can be provided.
  • a light transmittance of the interference filter can be increased in either or both of a narrow wavelength region corresponding to light emitted from the first light-emitting layer and a narrow wavelength region corresponding to light emitted from the second light-emitting layer.
  • monochrome chromaticity can be improved, color gamut can be increased, and a viewing-angle dependency of luminance and chromaticity with respect to light of a single color or a combined color of two or more different colors in the visible wavelength region can be greatly decreased.
  • Example 2 is a modification of Example 1.
  • the light-emitting layer is a heterochromatic light-emitting layer
  • the light-emitting layer is a heterochromatic light-emitting layer
  • the thicknesses of the first color light-emitting layer and the second color light-emitting layer included in the single light-emitting layer be increased. Therefore, it is difficult to determine that luminescent centers of the heterochromatic light-emitting layer are at one level.
  • a difference between the luminescent center of the first color (green) and the luminescent center of the second color (red) in the heterochromatic light-emitting layer may be 5 nm or greater.
  • the stacking order of the first color light-emitting layer and the second color light-emitting layer in the heterochromatic light-emitting layer be changed. Therefore, it is difficult to determine that luminescent centers of the heterochromatic light-emitting layer are at one level.
  • the second reflective interface may include plural interfaces.
  • a change of a light transmittance curve of green light, which is emitted from the green light-emitting layer to the outside of the light-emitting device, in the interference filter in which a wavelength is used as a variable has the same tendency as that of a change of a light-transmittance curve of red tight, which is emitted from the red light-emitting layer to the outside of the light-emitting device, in the interference filter in which a wavelength is used as a variable.
  • a ratio of the luminance decrease of the green light and a ratio of the luminance decrease of the red light are at the same level, and thus a chromaticity shift is not increased.
  • Example 3 is a modification of Example 1 or 2 and relates to the bottom emission type display apparatus. As illustrated in a partial schematic cross-sectional view of FIG. 5 , the light-emitting device 10 of Example 3 is the bottom emission type in which the second electrode 32 , the organic layer 33 , and the first electrode 31 are stacked in this order on the first substrate 11 . Light emitted from the light-emitting layer is emitted to the outside through the first substrate 11 .
  • a transparent conductive material layer having a thickness of 1 ⁇ m or greater, a transparent insulating layer having a thickness of 1 ⁇ m or greater, a resin layer having a thickness of 1 ⁇ m or greater, a glass layer having a thickness of 1 ⁇ m or greater, or an air layer having a thickness of 1 ⁇ m or greater may be further formed on a side of the third light-transmitting layer opposite to the second light-transmitting layer, that is, may be further formed between the third light-transmitting layer 43 and the first substrate 11 .
  • the outermost layer above the first electrode 31 is the second substrate 12 .
  • the first electrode 31 and the second substrate 12 are bonded to each other through an adhesion layer 29 .
  • Example 4 relates to the illumination apparatus according to the embodiment.
  • the light-emitting device 10 described in Examples 1 to 3 is disposed between a first substrate 111 and a second substrate 112 which are transparent.
  • light is emitted from the light-emitting layer to the second substrate or to the first substrate.
  • An outer periphery of the first substrate 111 and an outer periphery of the second substrate 112 are bonded to each other through a sealing member 113 .
  • a planar shape of the illumination apparatus is selected as necessary and, for example, is square or rectangular.
  • one light-emitting device 10 is illustrated. However, as necessary, plural light-emitting devices may be arranged in a desired pattern. Since the illumination apparatus itself has existing configuration and structure, the details thereof will not be described.
  • an illumination apparatus for example, a surface emission light source
  • an illumination apparatus having low angle dependency, that is, extremely low changes in intensity and chromaticity depending on an illumination direction and having superior light distribution characteristics
  • an illumination apparatus having superior color rendering properties and superior light distribution characteristics can be realized.
  • colors of light emitted from the light-emitting device not only white light but light of various colors can be obtained.
  • the present disclosure can adopt the following configurations.
  • a light-emitting device including:
  • a light-emitting device including:
  • a display apparatus obtained by arranging the plural light-emitting devices according to any one of [A01] to [B15] in a two-dimensional matrix.
  • An illumination apparatus including

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