US20120222615A1 - Film deposition apparatus - Google Patents

Film deposition apparatus Download PDF

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Publication number
US20120222615A1
US20120222615A1 US13/221,188 US201113221188A US2012222615A1 US 20120222615 A1 US20120222615 A1 US 20120222615A1 US 201113221188 A US201113221188 A US 201113221188A US 2012222615 A1 US2012222615 A1 US 2012222615A1
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United States
Prior art keywords
gas
turntable
area
reaction gas
film deposition
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Abandoned
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US13/221,188
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English (en)
Inventor
Hitoshi Kato
Tsuneyuki Okabe
Manabu Honma
Takeshi Kumagai
Yasushi Takeuchi
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HONMA, MANABU, KATO, HITOSHI, KUMAGAI, TAKESHI, OKABE, TSUNEYUKI, TAKEUCHI, YASUSHI
Publication of US20120222615A1 publication Critical patent/US20120222615A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the present invention relates to a film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber.
  • ALD Atomic Layer Deposition
  • Molecular Layer Deposition a film deposition method called Atomic Layer Deposition (ALD) or Molecular Layer Deposition.
  • ALD Atomic Layer Deposition
  • Molecular Layer Deposition a film deposition method carried out in a turntable type ALD apparatus.
  • An example of such an ALD apparatus has been proposed by the applicant of this patent application (See Patent Document 1 below).
  • the ALD apparatus of Patent Document 1 is provided with a turntable that is arranged in a vacuum chamber and on which, for example, five substrates are placed, a first reaction gas supplying part that supplies a first reaction gas toward the substrates on the turntable, a second reaction gas supplying part that supplies a second reaction gas toward the substrates on the turntable and is arranged away from the first reaction gas supplying part in the vacuum chamber.
  • the vacuum chamber includes a separation area that separates a first process area in which the first reaction gas is supplied from the first reaction gas supplying part and a second process area in which the second reaction gas is supplied from the second reaction gas supplying part.
  • the separation area includes a separation gas supplying part that supplies a separation gas and a ceiling surface that creates a thin space with respect to the turntable thereby to maintain the separation area at a higher pressure than those in the first and the second process areas with the separation gas from the separation gas supplying part.
  • Patent Document 1 Japanese Patent Application Laid-Open Publication No. 2010-56470.
  • the large-scale ALD apparatus tends to require additional ancillary facilities that, for example, supply the reaction gases and evacuate the vacuum chambers, thereby leading to an increased production cost and increased footprint of the ALD apparatus.
  • the present invention provides a film deposition apparatus that makes it possible to improve production throughputs while avoiding an excessive increase of ancillary facilities and/or footprint thereof.
  • a film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber.
  • the film deposition apparatus includes a first turntable rotatably provided in the chamber, wherein the first turntable includes at least ten substrate receiving areas in each of which a substrate having a diameter of 300 mm is placed; a first reaction gas supplying portion that is arranged in a first area inside the chamber, extends in a direction transverse to a rotation direction of the first turntable, and supplies a first reaction gas toward the first turntable; a second reaction gas supplying portion that is arranged in a second area that is away from the first reaction gas supplying portion along the rotation direction of the first turntable, extends in a direction transverse to the rotation direction of the first turntable, and supplies a second reaction gas toward the first turntable; a first evacuation port provided for the first area; a second evacuation port provided for the second area; and a separation area arranged between the first area and the second area.
  • the separation area includes a separation gas supplying portion that supplies a separation gas that separates the first reaction gas and the second reaction gas in the chamber, and a ceiling surface having a height from the first turntable so that a pressure in a space created between the ceiling surface and the first turntable is higher with the separation gas supplied from the separation gas supplying portion than pressures in the first area and the second area.
  • FIG. 1 is a plan view of a film deposition apparatus according to a first embodiment of the present invention
  • FIG. 2 is a cross-sectional view of the film deposition apparatus of FIG. 1 ;
  • FIG. 3 is an explanatory view for explaining a turntable and a core portion in the film deposition apparatus of FIG. 1 ;
  • FIG. 4 is a partial cross-sectional view of a vacuum chamber of the film deposition apparatus, taken along an auxiliary line S in FIG. 1
  • FIG. 5 is an explanatory view for explaining a wafer receiving area in the turntable of the film deposition apparatus of FIG. 1 ;
  • FIG. 6A is an explanatory view for explaining advantages of the film deposition apparatus of FIG. 1 ;
  • FIG. 6B is another explanatory view for explaining advantages of the film deposition apparatus of FIG. 1 ;
  • FIG. 7 is a schematic view illustrating an altered example of the turntable of the film deposition apparatus of FIG. 1 ;
  • FIG. 8 is a plan view schematically illustrating a film deposition apparatus according to a second embodiment of the present invention.
  • FIG. 9 is a perspective view illustrating a gas injector provided in the film deposition apparatus of FIG. 8 ;
  • FIG. 10 is a cross-sectional view illustrating the gas injector of FIG. 9 ;
  • FIG. 11 is a partially enlarged perspective view of the gas injector of FIG. 9 ;
  • FIG. 12 is a plan view schematically illustrating a film deposition apparatus according to a third embodiment.
  • FIG. 13 is a graph for explaining advantages of the film deposition apparatus according to the third embodiment.
  • a film deposition apparatus that makes it possible to improve production throughputs while avoiding an excessive increase of ancillary facilities and/or footprint thereof is provided.
  • a film deposition apparatus 10 according to a first embodiment of the present invention is explained.
  • a film deposition apparatus 10 according to this embodiment is provided with a vacuum chamber 1 having a flattened cylinder shape, and a turntable 2 that is located inside the vacuum chamber 1 and has a rotation center at a center of the vacuum chamber 1 .
  • the vacuum chamber 1 includes a chamber body 12 having a shape of a flattened cylinder with a bottom, and a ceiling plate 11 that is placed on the chamber body 12 via a ceiling member such as an O ring 13 in an airtight manner.
  • the ceiling plate 11 and the chamber body 12 are made of metal such as aluminum (Al).
  • plural circular substrate receiving areas 24 are formed in an upper surface of the turntable 2 .
  • eleven substrate receiving areas 24 are provided in an outer area along the circumference of the turntable 2 and five substrate receiving areas 24 are provided inside of the eleven substrate receiving areas 24 , in this embodiment.
  • Each of the substrate receiving areas 24 is configured as a concave portion having a diameter slightly larger, for example, by 4 mm than the diameter of the wafer W and a depth equal to a thickness of the wafer W.
  • a surface of the wafer W is at the same elevation of a surface of an area of the turntable 2 , the area excluding the substrate receiving areas 24 . Because there is substantially no step between the upper surface of the wafer W and the upper surface of the turntable 2 , gas flow turbulence which may affect thickness uniformity across the wafer W is not caused. In addition, because the wafer W is accommodated within the wafer receiving area 24 , the wafer W is not thrown out even when the turntable 2 is rotated. Incidentally, a wafer guide ring described later can be used in order to keep the wafer W in the wafer receiving area 24 .
  • the wafer having a diameter of 300 mm means a wafer commercially available as a 300 mm wafer or a 12 inch wafer, but does not mean a diameter of the wafer is exactly 300 mm.
  • a wafer having a diameter of 450 mm or 450 mm wafer, which is described later.
  • the turntable 2 has an opening at the center thereof, and is supported from above and below at and around the opening by a cylindrically shaped core portion 21 .
  • the core portion 21 is composed of an upper hub 21 a and a lower hub 21 b, as shown in FIG. 3 .
  • the upper hub 21 a has a through-hole 127 at an off-centered position
  • the lower hub 21 b has a screw hole 128 at a position corresponding to the through-hole 127 of the upper hub 21 a.
  • a bolt 123 is inserted into the through-hole 127 of the upper hub 21 a, together with a washer 124 , and threaded into the screw hole 128 of the lower hub 21 b , so that the upper hub 21 a and the lower hub 21 b are pushed onto the turntable 2 from the above and the below, respectively, so that the turntable 2 is firmly fixed. With this, the turntable 2 can be replaced by removing and then attaching the bolt 123 .
  • plural of the through holes 127 and corresponding plural of the screw holes 128 may be provided in the core portion 21 , so that the core portion 21 is more firmly fixed by corresponding plural of the bolts 123 .
  • the lower hub 21 b is fixed on a top end of a rotational shaft 221 .
  • the rotational shaft 221 extends in a vertical direction to go through a bottom portion 14 of the chamber body 12 and is fixed at the lower end to a driving mechanism 23 via a rotational shaft 222 .
  • the core portion 21 , the rotational shaft 221 , and the rotational shaft 222 share a rotational axis, and are rotated by the driving mechanism 23 , which in turn rotates the turntable 2 .
  • the rotational shaft 221 and the driving mechanism 23 are housed in a case body 20 having a shape of a cylinder with an open top and a closed bottom.
  • the case body 20 is fixed to a bottom surface of the bottom portion 14 via a flanged pipe portion 20 a in an airtight manner, so that an inner environment of the case body 20 is isolated from an outer environment.
  • the vacuum chamber 1 is provided with two convex portions 4 A, 4 B that are arranged above the turntable 2 and away from each other along a circumferential direction of the vacuum chamber 1 .
  • the convex portions 4 A, 4 B have a top view shape of a truncated sector.
  • Each of the convex portions 4 A, 4 B is located so that an inner arc thereof comes close to a protrusion portion 5 attached on the lower surface of the ceiling plate 11 in order to surround the core portion 21 , and an outer arc thereof extends along an inner circumferential surface of the chamber body 12 .
  • the convex portions 4 A, 4 B are attached on the lower surface of the ceiling plate 11 (see FIG. 2 for the convex portion 4 A) although the ceiling plate 11 is omitted in FIG. 1 for the convenience of the explanation.
  • the convex portion 4 B is arranged in the same manner as the convex portion 4 A. Because the convex portion 4 B has substantially the same configuration and function as the convex portion 4 A, the following explanation is made referring mainly to the convex portion 4 B.
  • the convex portions 4 A, 4 B may be made of, for example, metal such as aluminum.
  • the convex portion 4 B has a groove portion 43 that extends in the radial direction so that the groove portion 43 substantially bisects the convex portion 4 B.
  • a separation gas nozzle 42 is located in the groove portion 43 .
  • the separation gas nozzle 42 is introduced into the vacuum chamber 11 from a circumferential portion of the chamber body 12 and extends in the radial direction of the vacuum chamber 1 .
  • a base end portion of the separation gas nozzle 42 is attached in the circumferential portion of the chamber body 12 , so that the separation gas nozzle 42 is supported parallel with the upper surface of the turntable 2 .
  • a separation gas nozzle 41 is arranged in the groove portion 43 of the convex portion 4 A in the same manner.
  • the separation gas nozzle 42 is connected to a gas supplying source (not shown) of a separation gas, which may be an inert gas including nitrogen (N 2 ) gas.
  • a separation gas which may be an inert gas including nitrogen (N 2 ) gas.
  • the separation gas is not limited to the inert gas, but may be any gas as long as the separation gas does not affect the film deposition.
  • the N 2 gas is used as the separation gas.
  • the separation gas nozzle 42 has plural ejection holes 42 h ( FIG. 4 ) through which the N 2 gas is ejected toward the turntable 2 .
  • the ejection holes 42 h have a diameter of about 0.5 mm and are arranged at intervals of about 10 mm along the longitudinal direction of the separation gas nozzle 42 .
  • a distance between the separation gas nozzle 42 and the upper surface of the turntable 2 may be in a range from about 0.5 mm through 4 mm.
  • a separation space H is formed by the turntable 2 and the convex portion 4 B.
  • a height h 1 of the separation space H (or a height from the upper surface of the upper surface to a ceiling surface 44 (or a lower surface of the convex portion 4 B)) is preferably in a range from about 0.5 mm through about 10 mm.
  • the height may be about 3.5 mm through about 6.5 mm in order to prevent the turntable 2 from hitting the ceiling surface 44 , although the height h 1 is preferably smaller.
  • first area 481 and a second area 482 which are defined by the upper surface of the turntable 2 and a lower surface of the ceiling plate 11 . Heights of the first area 481 and the second area 482 (or heights of the lower surface of the ceiling plate 11 from the upper surface of the turntable 2 ) may be in a range from about 15 mm through about 150 mm.
  • a reaction gas nozzle 31 is provided in the first area 481
  • a reaction gas nozzle 32 is provided in the second area 482 .
  • the reaction gas nozzles 31 , 32 are introduced into the vacuum chamber 1 through a circumferential wall of the chamber body 12 , and extend in radius directions, as shown in FIG. 1 .
  • Each of the reaction gas nozzles 31 , 32 has plural ejection holes 33 that are open downward and arranged at about 10 mm intervals along the longitudinal directions of the reaction gas nozzles 31 , (or 32 ), as shown in FIG. 4 .
  • Each of the plural ejection holes 33 has a diameter of about 0.5 mm.
  • a first reaction gas is supplied from the reaction gas nozzle 31
  • a second reaction gas is supplied from the reaction gas nozzle 32 .
  • reaction gas nozzle 31 is connected to a gas source of a bis (tertiary-butylamino) silane (BTBAS) gas as silicon source gas
  • reaction gas nozzle 32 is connected to a gas source of ozone gas as an oxidizing gas that oxidizes the BTBAS into silicon oxide.
  • BBAS bis (tertiary-butylamino) silane
  • the N 2 gas flows to the first area 481 and the second area 482 from the separation space H. Because the height h 1 of the separation space H is smaller than the heights of the first area 481 and the second area 482 , as explained above, a pressure of the separation space H can be easily greater than pressures of the first area 481 and the second area 482 .
  • the height and width of the convex portion 4 B and a flow rate of the N 2 gas from the separation gas nozzle 41 is preferably determined so that the pressure of the separation space H can be easily greater than the pressures of the first area 481 and the second area 482 .
  • the separation space H can provide a pressure wall against the first area 481 and the second area 482 , thereby certainly separating the first area 481 and the second area 482 .
  • the first reaction gas e.g., BTBAS gas
  • the second reaction gas e.g., ozone gas
  • the second reaction gas cannot flow through the separation space H into the first area 481 because of the pressure wall created in the separation space H. Therefore, the first reaction gas and the second reaction gas are effectively impeded from being intermixed through the separation space H.
  • the protrusion portion 5 which is attached on the lower surface of the ceiling plate 11 in order to surround the core portion 21 that firmly fixes the turntable 2 , comes close to the upper surface of the turntable 2 .
  • a lower surface of the protrusion portion 5 is substantially at the same elevation as the ceiling surface 44 (or the lower surface of the convex portion 4 B (or 4 A)).
  • a height of the lower surface of the protrusion portion 5 from the upper surface of the turntable 2 is the same as the height h 1 of the ceiling surface 44 .
  • a separation gas supplying pipe 51 is connected to an upper center portion of the ceiling plate 11 , and supplies N 2 gas. With this N 2 gas supplied from the gas supplying pipe 51 , spaces between the core portion 21 and the ceiling plate 11 , between the inner circumferential surface of protrusion portion 5 , and between the protrusion portion 5 and the turntable 2 can have higher pressure than the pressures of the first area 481 and the second area 482 .
  • the spaces may be referred to as a center space hereinafter, for the sake of explanation. Therefore, the center space can provide a pressure wall against the first area 481 and the second area 482 , thereby certainly separating the first area 481 and the second area 482 .
  • the first reaction gas e.g., BTBAS gas
  • the second reaction gas e.g., ozone gas
  • a ring-shaped heater unit 7 as a heating portion is provided in a space between the bottom portion 14 of the chamber body 12 and the turntable 2 , so that the wafers W placed on the turntable 2 are heated through the turntable 2 at a predetermined temperature.
  • a block member 71 a is provided beneath the turntable 2 and near the outer circumference of the turntable 2 in order to surround the heater unit 7 , so that the space where the heater unit 7 is housed is partitioned from the outside area of the block member 71 a.
  • Plural purge gas supplying pipes 73 are connected at predetermined angular intervals to the space where the heater unit 7 is housed in order to purge this space.
  • a protection plate 7 a that protects the heater unit 7 is supported above the heater unit 7 by the block member 71 a and a raised portion R (described later). With the protection plate 7 a, the heater unit 7 can be protected even when the BTBAS gas and/or the O 3 gas flow below the turntable 2 .
  • the protection plate 7 a is preferably made of, for example, quartz.
  • the heater unit 7 may be configured of plural lamp heaters that are placed concentrically. With this, each of the plural lamp heaters can be separately controlled, thereby uniformly heating the turntable 2 .
  • the bottom portion 14 has a raised portion R in an inside area of the ring-shaped heater unit 7 .
  • the top surface of the raised portion R comes close to the back surface of the turntable 2 and the core portion 21 , leaving slight gaps between the raised portion R and the turntable 2 and between the raised portion R and the core portion 21 .
  • the bottom portion 14 has a center hole through which the rotational shaft 221 passes.
  • the inner diameter of the center hole is slightly larger than the diameter of the rotational shaft 221 , leaving a gap that allows pressure communication with the case body 20 through the flanged pipe portion 20 a.
  • a purge gas supplying pipe 72 is connected to an upper portion of the flanged pipe portion 20 a.
  • N 2 gas flows from the purge gas supplying pipe 72 into the space where the heater unit 7 is housed through the gap between the center hole of the bottom portion 14 of the chamber body 12 and the rotational shaft 22 , and between the raised portion R and the lower surface of the turntable 2 .
  • the N 2 gas flows through a gap between the block member 71 a and the lower surface of the turntable 2 , together with the N 2 gas from the purge gas supplying pipes 73 , into an evacuation port 61 .
  • the N 2 gases flowing in such a manner can serve as separation gases that impede the BTBAS (or O 3 gas) from being intermixed with the O 3 gas (or BTBAS gas) by way of the space below the turntable 2 .
  • the convex portion 4 B has a bent portion 46 B that bends in an L-shape from an outer circumferential portion of the convex portion 4 B, and extends between the outer circumference of the turntable 2 and the inner circumferential surface of the chamber body 12 .
  • the convex portion 4 A has a bent portion 46 A that bends in an L-shape from an outer circumferential portion of the convex portion 4 A, and extends between the outer circumference of the turntable 2 and the inner circumferential surface of the chamber body 12 . Because the bent portions 46 A, 46 B have the same structure, the bent portion 46 A is explained referring to FIG. 2 in the following for the sake of convenience.
  • the bent portion 46 A is integrally formed with the convex portion 4 A in this embodiment.
  • the bent portion 46 A substantially fills the gap between the space between the turntable 2 and the chamber body 12 , thereby impeding the first reaction gas (e.g., BTBAS gas) from being intermixed with the second reaction gas (e.g., O 3 gas) by way of this space.
  • Gaps between the chamber body 12 and the bent portion 46 A, and between the bent portion 46 A and the turntable 2 may be the same as the height h 1 of the ceiling surface 44 from the upper surface of the turntable 2 . Because of the bent portion 46 A, the separation gas from the separation gas nozzle ( FIG.
  • the bent portion 46 A contributes to maintaining the higher pressure of the separation space H (the space between the turntable 2 and the convex portion 4 A).
  • the higher pressure of the separation space H can be more effectively maintained.
  • the gaps between the bent portions 46 A, 46 B and the turntable 2 are preferably determined by taking into consideration thermal expansion of the turntable 2 so that the gaps become the same as, for example, the height h 1 when the turntable 2 is heated by the heater unit 7 .
  • a part of the inner circumferential surface of the chamber body 12 is indented outward in the first area 481 , and the evacuation port 61 is formed below the indented portion.
  • another part of the inner circumferential surface of the chamber body 12 is indented outward in the second area 482 , and an evacuation port 62 is formed below the indented portion.
  • the evacuation ports 61 , 62 are connected together or separately to an evacuation system including a pressure controller and a turbo molecular pump (not shown), so that an inner pressure of the vacuum chamber 1 is controlled.
  • the evacuation port 61 is formed corresponding to the first area 481
  • the evacuation port 62 is formed corresponding to the second area 482
  • the first area 481 is evacuated substantially exclusively through the evacuation port 61
  • the second area 482 is evacuated substantially exclusively through the evacuation port 62 . Therefore, the pressures of the first area 481 and the second area 482 tend to be lower than the pressure of the separation space H.
  • the evacuation port 61 is positioned between the reaction gas nozzle 31 and the convex portion 4 B located downstream relative to the reaction gas nozzle 31 along the rotation direction of the turntable 2 .
  • the port 62 is positioned between the reaction gas nozzle 32 and the convex portion 4 A located downstream relative to the reaction gas nozzle 32 along the rotation direction of the turntable 2 . Specifically, the evacuation port 62 comes closer to the convex portion 4 A.
  • the first reaction gas e.g., BTBAS gas
  • the reaction gas e.g., O 3 gas
  • a transfer opening 15 is formed in the circumferential wall of the chamber body 12 .
  • the wafer W is transferred into or out from the vacuum chamber 1 through the transfer opening 15 .
  • the transfer opening 15 is provided with a gate valve 15 a that opens or closes the transfer opening 15 .
  • Part (a) of FIG. 5 is a perspective view of a part of the turntable 2 .
  • three through-holes are formed in the wafer receiving area 24 of the turntable 2 , and three lift pins 16 a can move upward or downward through the corresponding through holes.
  • the three lift pins 16 a support a pusher P and move the pusher P upward or downward.
  • the wafer receiving area 24 has an indent 24 b that has a shape corresponding to the pusher P.
  • wafer supporting portions 24 a are formed along the outer circumference of the wafer receiving area 24 , as shown in part (b) of FIG. 5 . Although not shown in the drawing, plural (e.g., eight) wafer supporting portions 24 a are formed along the outer circumference of the wafer receiving area 24 . When the wafer W is placed in the wafer receiving area 24 , the wafer W is supported by the wafer supporting portions 24 a.
  • a guide groove 18 g is formed around the wafer receiving area 24 , so that a wafer guide ring 18 is fitted into the guide groove 18 g.
  • Part (c) of FIG. 5 illustrates the wafer guide ring 18 fitted in the guide groove 18 g .
  • the wafer guide ring 18 has an inner diameter that is greater than the diameter of the wafer W, and thus the wafer W is arranged within the wafer guide ring 18 when the wafer guide ring 18 is fitted into the guide groove 18 g.
  • claws 18 a are formed on the upper surface of the wafer guide ring 18 .
  • the claws 18 a extend toward the center of the wafer guide ring 18 so that they go beyond and are positioned above the edge of the wafer W that has been placed in the wafer receiving area 24 . While the claws 18 a do not touch the upper surface of the wafer W in normal conditions, they can keep the wafer W in the wafer receiving area 24 , even if the wafer W may be brought upward by sudden changes in the inner pressure of the vacuum chamber 1 for some reasons.
  • four lift pins 16 b that bring the wafer guide ring 18 upward or downward are formed outside of the guide groove 18 g. While the wafer guide ring 18 is brought up by the lift pins 16 b, the wafer W is transferred between the wafer guide ring 18 and the turntable 2 by the transfer arm ( FIG. 1 ). After the pusher P is brought up by the lift pins 16 a thereby to receive the wafer W from the transfer arm 10 , the transfer arm 10 is withdrawn from the vacuum chamber 1 and the lift pins 16 a are brought downward and the pusher P is accommodated in the indent 24 b. With this, the wafer W is received by the wafer supporting portions 24 a in the wafer receiving area 24 . Next, the lift pins 16 b are brought downward thereby to allow the wafer guide ring 18 to be accommodated in the guide groove 18 g. With this, the wafer W is accommodated assuredly by the wafer guide ring 18 .
  • the film deposition apparatus is provided with a control portion 100 that controls total operations of the deposition apparatus, as shown in FIG. 1 .
  • the control portion 100 includes a process controller 100 a formed of, for example, a computer, a user interface portion 100 b, and a memory device 100 c.
  • the user interface portion 100 b has a display that shows operations of the film deposition apparatus, and a key board and a touch panel (not shown) that allow an operator of the film deposition apparatus 10 to select a process recipe and an administrator of the film deposition apparatus to change parameters in the process recipe.
  • the memory device 100 c stores a control program and a process recipe that cause the controlling portion 100 to carry out various operations of the deposition apparatus, and various parameters in the process recipe.
  • These programs have groups of steps for carrying out a film deposition process described later, for example.
  • These programs and process recipes are installed into and run by the process controller 100 a by instructions from the user interface portion 100 b.
  • the programs are stored in a computer readable storage medium 100 d and installed into the memory device 100 c from the storage medium 100 d through an interface (I/O) device corresponding to the computer readable storage medium 100 d.
  • the computer readable storage medium 100 d may be a hard disk, a compact disc, a magneto optical disk, a memory card, a flexible disk, or the like.
  • the programs may be downloaded to the memory device 100 c through a communications network.
  • the turntable 2 is rotated so that one of the five inner wafer receiving areas 24 is in alignment with the transfer opening 15 , and then the gate valve 15 a is opened.
  • the wafer guide ring 18 is brought up by the lift pins 16 b
  • the wafer W is transferred into the vacuum chamber 1 by the transfer arm 10 , and held between the turntable 2 and the wafer guide ring 18 .
  • the transfer arm 10 is withdrawn from the vacuum chamber 1 , and then the pusher P holding the wafer W is brought down by the lift pins 16 a.
  • the wafer W is placed in the wafer receiving area 24 .
  • the wafer guide ring 18 is brought down by the lift pins 16 b and fitted into the guide groove 18 g.
  • the above series of the procedures is repeated five times, so that the five wafers W are set in the corresponding inner wafer receiving areas 24 .
  • the same series of the procedures is repeated eleven times so that the eleven wafers W are set in the corresponding eleven outer wafer receiving areas 24 . With this, the wafer transfer-in process is completed.
  • the vacuum chamber 1 is evacuated by the evacuation mechanism (not shown), while the N 2 gas is supplied from the separation gas nozzles 41 , 42 , the separation gas supplying pipe 51 , and the purge gas supplying pipes 72 , 73 , so that the vacuum chamber 1 is maintained at a predetermined pressure by the pressure controller (not shown).
  • the turntable 2 starts rotating in a clockwise direction when seen from above.
  • the turntable 2 is heated at a predetermined temperature (e.g., about 300° C.) in advance by the heater unit 7 , and thus the wafers W on the turntable 2 are heated at substantially the same temperature.
  • the BTBAS gas is supplied to the first area 481 from the reaction gas nozzle 31
  • the O 3 gas is supplied to the second area 482 from the reaction gas nozzle 32 .
  • the BTBAS gas is adsorbed on the upper surfaces of the wafers W, and the adsorbed BTBAS gas is oxidized by the O 3 gas when the wafers W pass through below the reaction gas nozzle 32 .
  • the wafers W pass through the first area 481 and the second area 482 .
  • one molecular layer (or two or more molecular layers) of silicon oxide is formed on the upper surface of the wafers W.
  • the turntable 2 is rotated predetermined times, the silicon oxide film having a predetermined thickness is obtained on the upper surface of the wafers W, and then the BTBAS gas and the O 3 gas are shut off and the turntable 2 is stopped.
  • the wafers W are transferred out from the vacuum chamber 1 by procedures that are substantially opposite to the procedures with which the wafers W are transferred in. With this, the film deposition process is completed.
  • the sixteen wafers W each of which has a diameter of 300 mm, can be placed on the turntable 2 . Therefore, production throughput may be enhanced by a factor of 3.2, compared to when the five wafers W are placed on a turntable having five wafer receiving areas.
  • FIG. 6A illustrates a film deposition system as a comparative example, which includes two vacuum chambers 10 c, a vacuum transfer chamber 106 that is connected to the vacuum chambers 10 c, an atmospheric transfer chamber 102 that connects the vacuum transfer chamber 106 and load lock chambers 105 a through 105 c, and a stage F on which wafer carrier such as Front-Opening Unified Pods (FOUPs) are placed.
  • the vacuum chambers 10 c are provided inside each with a turntable 200 having five wafer receiving areas 240 , each of which can accommodate a 300 mm wafer.
  • part (b) of FIG. 6B illustrates a film deposition system including the film deposition apparatus 10 according to an embodiment of the present invention, the vacuum transfer chamber 106 , the atmospheric transfer chamber 102 that connects the load lock chambers 105 a through 105 c to the vacuum transfer chamber 106 , and the stage F.
  • Part (a) of FIG. 6B illustrates ancillary facilities that may be installed for the film deposition apparatus of part (a) of FIG. 6A , for example, in a basement floor of a clean room where the film deposition apparatus of part (a) of FIG. 6A is placed.
  • the ancillary facilities include two transformers TS, two ozone generators OG, two chillers CH, four evacuation apparatuses ES, and two intoxicating apparatuses TT, which reflect the two vacuum chambers 10 c.
  • maintenance spaces MS are set aside around the transformers TS and the like.
  • the ancillary facilities occupy a total area of about 21.6 m 2 (about 5.4 m ⁇ about 4 m, as shown).
  • the film deposition systems illustrated in part (a) of FIG. 6A and part (b) of 6 B have different footprints, which corresponds to a difference between the two vacuum chambers 10 c in part (a) of FIG. 6A and the vacuum chamber 1 in part (b) of FIG. 6B because other components such as the transfer chamber 106 are the same between the two systems.
  • the vacuum chamber 10 c has an outer diameter of about 1.6 m
  • the two vacuum chambers 10 c occupy a floor area of about 4.02 m 2 ((1.6/2)2 ⁇ 2).
  • the vacuum chamber 1 has an outer diameter of about 2.4 m, it occupies a floor area of about 4.52 m 2 ((2.4/2)2 ⁇ ), which is greater than the floor area of 4.02 m 2 for the two vacuum chambers 10 c.
  • the vacuum chambers 10 c, 1 , the vacuum transfer chamber 106 , and the like which can be isolated from an ambient environment, can be placed in a maintenance zone (with a lower degree of cleanness) of the clean room. Therefore, the increase in the foot print of the film deposition system having the film deposition apparatus 10 does not provides significant influence on the floor area of the clean room.
  • the separation spaces H can be easily maintained with the separation gases from the separation gas nozzles 41 , 42 at higher pressure than the pressures of the first area 481 and the second area 482 because the height h 1 of the separation space H ( FIG. 4 ) is smaller than the heights of the first area 481 and the second area 482 in the film deposition apparatus 10 . Therefore, the first area 481 and the second area 482 are certainly separated. In other words, the first reaction gas and the second reaction gas are not intermixed with each other at the gaseous phase in the vacuum chamber 1 .
  • the N 2 gas that has flowed out from the separation space H to the first area 481 and the second area 482 tends to flow above the reaction gas nozzle 31 and the reaction gas nozzle 32 , respectively, because the reaction gas nozzle 31 and the reaction gas nozzle 32 are positioned close to the upper surface of the turntable 2 and away from the ceiling plate 11 . Therefore, the first reaction gas and the second reaction gas, which are supplied from the reaction gas nozzle 31 and the reaction gas nozzle 32 , respectively, are not greatly diluted by the N 2 gas.
  • the turntable 2 is not limited to one having 16 wafer receiving areas 24 as illustrated in FIG. 1 , but may be altered in various ways.
  • the turntable 2 may have five wafer receiving areas 24 in the inner area and ten wafer receiving areas 24 in the circumferential area, so that fifteen wafers W having a diameter of 300 mm can be placed in total, as shown in a part (a) of
  • the turntable 2 may have ten or eleven wafer receiving areas 24 only in the circumferential area (or an area along the circumference of the turntable 2 ) as shown in parts (b) and (c) of FIG. 7 . Even when the wafer receiving areas 24 are provided in the circumferential area, the production through put can be enhanced, when compared to when the turntable 2 has five wafer receiving areas 24 .
  • the film deposition apparatus 10 according to a second embodiment of the present invention is explained with reference to FIGS. 8 through 11 .
  • differences of the film deposition apparatus 10 according to the second embodiment with respect to the film deposition apparatus 10 according to the first embodiment is focused on, and the explanation on the same configurations is omitted.
  • a turntable 2 a of a film deposition apparatus 100 is provided with five wafer receiving areas 24 , each of which can receive a wafer W having a diameter of 450 mm.
  • the turntable 2 a is provided with the wafer supporting portions 24 a , the lift pins 16 a, the wafer guide rings 18 , the claws 18 a, the lift pins 16 b, and the like, for the wafer receiving areas 24 .
  • the film deposition apparatus 100 is provided with three reaction gas nozzles 31 A, 31 B, 31 C that supply the first reaction gas (e.g., BTBAS gas).
  • These gas nozzles 31 A, 318 , 31 C are introduced into the vacuum chamber 1 through the circumferential wall of the chamber body 12 , and supported in order to extend in the radius direction of the turntable 2 a and in parallel with the upper surface of the turntable 2 a .
  • a distance between the reaction gas nozzles 31 A, 31 B, 31 C and the upper surface of the turntable 2 a may be, for example, about 0.5 mm through about 4 mm.
  • the reaction gas nozzles 31 A, 31 B, 31 C have different lengths.
  • reaction gas nozzle 31 A is the longest among them; the reaction gas nozzle 31 C is the shortest among them; and the reaction gas nozzle 318 is between the gas nozzles 31 A, 31 C in terms of the length.
  • each of the gas nozzles 31 A, 31 B, 31 C is provided with plural ejection holes (not shown) that are open toward the turntable 2 and arranged along the longitudinal direction. Diameters of the ejection holes may be, for example, about 0.5 mm.
  • each of the gas nozzles 31 A, 31 B, 31 C is connected to a reaction gas supplying source of the first reaction gas via corresponding gas lines (not shown), each of which has a flow rate controller such as a mass flow controller (not shown).
  • a flow rate controller such as a mass flow controller
  • the first reaction gas can be supplied also from the reaction gas nozzles 318 , 31 C, so that substantive concentration reduction of the first reaction gas in an outer area of the turntable 2 a can be suppressed. Because a line speed of the turntable 2 a becomes greater and a gas flow speed is greater due to the rotation of the turntable 2 a in the outer area of the turntable 2 a, it may become difficult for the first reaction gas to be uniformly adsorbed. However, because the reaction gas nozzles 318 , 31 C can supply the first reaction gas to the outer area of the turntable 2 a, the first reaction gas can be uniformly adsorbed on the wafers W.
  • the film deposition apparatus 100 is provided with a gas injector 320 that activates a predetermined gas with plasma and supplies the activated gas to the wafers W.
  • the gas injector 320 is explained with reference to FIGS. 9 through 11 .
  • the activated gas injector 32 includes a gas injector body 321 as a passage defining member having a shape of a flattened elongated rectangular parallelepiped.
  • the gas injector body 321 is hollow as shown in FIGS. 9 and 10 , and made of quartz, which has an excellent resistance against plasma etching, for example.
  • the hollow space inside the gas injector body 321 is divided into two different spaces by a partition wall 324 . The spaces extend in the longitudinal direction and have different widths.
  • One of the spaces is a gas activation chamber 323 as a gas activation passage where a predetermined gas is activated into plasma
  • the other space is a gas introduction chamber 322 as a gas introduction passage from which the predetermined gas is uniformly introduced into the gas activation chamber 323 .
  • a ratio of a width of the gas activation chamber 323 with respect to that of the gas introduction chamber 322 is about 2 ⁇ 3, which means the gas introduction chamber 322 has a larger volume.
  • a tubular gas introduction nozzle 34 is arranged in the gas introduction chamber 322 so that the gas introduction nozzle 34 extends from a base end to a distal end of the gas introduction chamber 322 along the partition wall 324 .
  • the gas introduction nozzle 34 has gas holes 341 that are formed in a circumferential surface of the gas introduction nozzle 34 and open toward the partition wall 324 .
  • the gas holes 341 are arranged at predetermined intervals in the longitudinal direction of the gas introduction nozzle 34 and allow the predetermined gas to flow through into the gas introduction chamber 322 .
  • a base end of the gas introduction nozzle 34 is connected to a gas introduction port 39 at a side wall of the gas injector body 321 ( FIG. 9 ).
  • the gas introduction port 39 is connected to a gas supplying port (not shown), from which the predetermined gas is supplied to the gas introduction nozzle 34 through the gas introduction port 39 .
  • Elongated rectangular cut-out portions 325 are formed at predetermined intervals along the longitudinal direction (a longitudinal direction of electrodes 36 a, 36 b described later) in an upper portion of the partition wall 324 opposing the gas introduction nozzle 34 .
  • the cut-out portions 325 and a ceiling surface of the injector body 12 define rectangular through-holes that allow the predetermined gas to flow from the gas introduction chamber 322 into an upper part of the gas activation chamber 323 .
  • a distance “L 1 ” from the gas holes 341 of the gas introduction nozzle 34 to the partition wall 324 is set to be long enough to allow the predetermined gas ejected out from the gas holes 341 to spread in the longitudinal direction so that the gas concentration becomes uniform.
  • two sheath pipes 35 a, 35 b made of dielectric materials, for example, ceramics, extend from the base end to the distal end of the gas activation chamber 323 along the partition wall 324 .
  • the sheath pipes 35 a, 35 b are horizontally arranged in parallel with each other with a gap therebetween.
  • Electrodes 36 a, 36 b that are made of, for example, nickel alloy, which has an excellent heat resistance, and have a diameter of about 5 mm, are inserted into the corresponding sheath pipes 35 a, 35 b in the direction from the base end to the distal end ( FIG. 10 ).
  • the electrodes 36 a, 36 b are arranged in parallel with each other leaving a distance of, for example, 2 mm through 10 mm, preferably 4 mm between the electrodes 36 a, 36 b, and are surrounded by the corresponding sheath pipes 35 a, 35 b made of ceramics.
  • Base ends of the electrodes 36 a, 36 b are drawn out from the gas injector body 321 , and connected to a high frequency power source (not shown) via a matching box (not shown) outside of the vacuum chamber 1 .
  • high frequency power at a frequency of, for example, 13.56 MHz is supplied at a power level of, for example, 10 W through 200 W, preferably 100 W, to the electrodes 36 a, 36 b, which causes capacitively-coupled plasma in a plasma generation space 351 between the two sheath pipes 35 a, 35 b, thereby activating the predetermined gas flowing through the plasma generation space 351 .
  • the sheath pipes 35 a, 35 b also extend out through the base end wall of the injector body 321 and the extended-out portions of the sheath pipes 35 a, 35 b are surrounded by a guard pipe 37 made of, for example, ceramics.
  • the injector body 321 has in its bottom below the plasma generation space 351 gas ejection holes 330 that allow the activated gas to flow downward.
  • the gas ejection holes 330 are arranged at predetermined intervals along the longitudinal direction of the electrodes 36 a, 36 b.
  • a ratio of a distance “h 2 ” ( FIG. 10 ) between the ceiling surface of the gas activation chamber 323 and the sheath pipe 35 a ( 35 b ) with respect to a distance “w” between the partition wall 324 and the sheath pipe 35 b is determined to be, for example, h 2 ⁇ w.
  • the predetermined gas flowing into the gas activation chamber 323 from the gas introduction chamber 322 mainly flows through the plasma generation space 351 , rather than a space between the partition wall 324 and the sheath pipe 35 b, into the gas ejection holes 330 .
  • the gas injector body 321 so configured is cantilevered by attaching the introduction port 39 and/or the guard pipe 37 to the circumferential wall of the chamber body 12 , and extended so that the distal end of the gas injector body 321 is directed toward the center of the turntable 2 .
  • the bottom of the gas injector body 321 is located so that a distance between the gas ejection holes 330 of the gas activation chamber 323 and the wafer W placed in the concave portion 24 of the turntable 2 is within a range, for example, from 1 mm to 10 mm, preferably 10 mm.
  • the gas injector body 321 is detachably attached to the chamber body 12 , and the guard pipe 37 is fixed to the chamber body 12 via, for example, an O-ring (not shown), thereby keeping the airtightness of the vacuum chamber 1 .
  • the predetermined gas supplied to the gas introduction nozzle 34 of the gas injector 320 may be, for example, O 2 gas.
  • O 2 gas because the activated O 2 gas can be supplied to the wafer W, the silicon oxide film formed through oxidation of the BTBAS gas adsorbed on the upper surface of the wafer W with the O 3 gas can be densified, and/or impurities such as organic substances in the silicon oxide film can be eliminated.
  • the predetermined gas may be, for example, ammonia (NH 3 ) gas. With this, the activated NH 3 gas or nitrogen active species can be adsorbed on the surface of the silicon oxide film formed from the BTBAS gas and the O 3 gas, so that silicon oxynitride film can be obtained.
  • the film deposition apparatus 100 because the five 450 mm wafers can be placed on the turntable 2 a, the production throughput can be enhanced, compared to when the five 300 mm wafers are placed.
  • the first reaction gas can be adsorbed uniformly along the radius direction of the turntable 2 a, which contributes to improved uniformity of thickness and film properties of the film deposited on the wafers W.
  • the film deposition apparatus 100 is provided with the gas injector 320 , the alteration gas is activated and then supplied to the wafers W, so that properties of the film formed from the first reaction gas supplied from the reaction gas nozzles 31 A, 31 B, 31 C and the second reaction gas supplied from the reaction gas nozzle 32 can be improved.
  • a film deposition apparatus 101 includes the turntable 2 that is the same as the one illustrated in part (b) of FIG. 7 .
  • the turntable 2 has eleven wafer receiving areas 24 along the outer circumferential edge and no wafer receiving areas in the inner area.
  • a diameter of the protrusion portion 5 becomes larger, and thus the inner arc length of the convex portions 4 A, 4 B becomes greater.
  • the film deposition apparatus 101 is different from the film deposition apparatus 10 according to the first embodiment, and except for these differences, the film deposition apparatus 101 is substantially the same as the film deposition apparatus 10 .
  • the protrusion portion 5 has a larger diameter and thus covers the inner area where no wafer receiving areas are formed in the turntable 2 , a space between the protrusion portion 5 and the turntable 2 is enlarged, so that the first reaction gas supplied from the reaction gas nozzle 31 and the second reaction gas nozzle 32 are not intermixed through the space H.
  • the first reaction gas (or the second reaction gas) supplied to the first area 481 (or the second area 482 ) from the reaction gas nozzle 31 (or the reaction gas nozzle 32 ) is less likely to go through a boundary area between convex portion 4 A (or 45 ) to reach the second area 482 (or the first area 481 ). In other words, intermixture of the first reaction gas and the second reaction gas through the boundary can be certainly avoided.
  • the first reaction gas may flow into the second area 482 through the boundary area between the convex portion 4 A (or 4 B) and the protrusion portion 5 .
  • a length of the boundary can be greater because of the larger diameter of the protrusion portion 5 that corresponds to the inner area where no wafer receiving areas 24 are formed in the turntable 2 , thereby providing a greater separation effect of the first and the second reaction gases.
  • the eleven 300 mm wafers W can be placed on the turntable 2 , the production throughput can be enhanced, compared to when only five wafers W are placed.
  • the turntable 2 a of the film deposition apparatus 100 according to the second embodiment may be used in the film deposition apparatus 10 according to the first embodiment, and the turntable in the first embodiment may be used in the second embodiment.
  • the turntable 2 illustrated in FIG. 7 may be used in the film deposition apparatus 100 according to the second embodiment.
  • a turntable having the wafer receiving areas for 300 mm wafers and a turntable having the wafer receiving areas for 450 mm wafers are exchangeably used in the film deposition apparatus according to an embodiment of the present invention, so that films are deposited on 300 mm wafers or 450 mm wafers.
  • the film deposition apparatus can provide a great advantage in that the film deposition apparatus can be continuously used even when a wafer size is changed from 300 mm to 450 mm. Specifically, there is no need of purchasing a film deposition apparatus for 450 mm wafers or retrofitting a film deposition apparatus for 300 mm wafers into a film deposition apparatus for 450 mm wafers.
  • the number of the wafer receiving areas 24 is not limited to those exemplified above, but may be arbitrarily changed. For example, as the number of the wafer receiving areas 24 is increased, an amount of the N1 gas required per wafer can be reduced, thereby reducing production costs of semiconductor devices.
  • FIG. 13 illustrates a result of computer simulation carried out to determine an amount of the N 2 gas that should be supplied to the separation space H from the separation gas nozzles 41 , 42 in order to separate the first area 481 and the second area 482 .
  • the amount of the N 2 gas is shown as a function of the number of the wafers, taking into consideration a diameter of the turntable on which the corresponding plural wafers can be placed, a size of the vacuum chamber 1 that can accommodate the turntable, and sizes of the convex portions 4 A, 45 in accordance with the size of the vacuum chamber.
  • the number of the wafers 300 mm
  • the amount of the N 2 gas to be supplied should be increased.
  • the amount of the N 2 gas per wafer is decreased, even if the size of the vacuum chamber 1 is increased or the number of the wafers is increased.
  • the groove 43 is formed in the convex portion 4 A (or 4 B) so that it bisects the convex portion 4 A (or 4 B) in the above embodiments, it may be formed in a downstream side of the convex portion 4 A (or 4 B) so that the ceiling surface 44 (or the lower surface of the convex portion 4 A (or 4 B) is enlarged in an upstream side thereof.
  • reaction gas nozzles 31 ( 31 A through 31 C), 32 may extend from the center portion of the vacuum chamber 1 instead of from the circumferential wall of the chamber body 12 of the film deposition apparatuses 10 , 100 , 101 in other embodiments. Moreover, the reaction gas nozzles 31 ( 31 A through 31 C), 32 may extend at a predetermined angle with respect to the radius direction of the turntable 2 .
  • reaction gas nozzles 31 A through 31 C are used to supply the first reaction gas (e.g., BTBAS gas or silicon containing gas) in the second embodiment
  • first reaction gas e.g., BTBAS gas or silicon containing gas
  • second reaction gas e.g., O 3 gas
  • plural reaction gas nozzles may be used in the film deposition apparatus 10 in the first embodiment and the film deposition apparatus 101 in the third embodiment.
  • gas injector 320 may be used in the first embodiment and the film deposition apparatus 101 in the third embodiment.
  • a length of the convex portions 4 A, 4 B which is measured along the rotation direction of the turntable 2 ( 2 a ), may range from about one-tenth of a diameter of the wafer W through about a diameter of the wafer W, preferably, about one-sixth or more of the diameter of the wafer W in terms of an arc that corresponds to a route through which a wafer center passes.
  • the film deposition apparatus is applicable to ALD (or MLD) film deposition of a silicon nitride film.
  • the film deposition apparatus according to an embodiment of the present invention is applicable to ALD (or MLD) film depositions of an aluminum oxide film using Trimethyl Aluminum (TMA) gas and O 3 gas, a zirconium oxide film using tetrakis-ethyl-methyl-amino-zirconium (TEMAZr) gas and O 3 gas, a hafnium oxide film using tetrakis-ethyl-methyl-amino-hafnium (TEMAH) gas and O 3 gas, a strontium oxide film using bis(tetra methyl heptandionate) strontium (Sr(THD) 2 ) gas and O 3 gas, a titanium oxide film using (methyl-pentadionate)(bis-tetra-methyl-heptandionate) titanium (Ti(MPD)(THD)) gas

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