US20120055610A1 - Ceramic substrate, method of manufacturing the same, and electrical device using the same - Google Patents
Ceramic substrate, method of manufacturing the same, and electrical device using the same Download PDFInfo
- Publication number
- US20120055610A1 US20120055610A1 US13/295,819 US201113295819A US2012055610A1 US 20120055610 A1 US20120055610 A1 US 20120055610A1 US 201113295819 A US201113295819 A US 201113295819A US 2012055610 A1 US2012055610 A1 US 2012055610A1
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- ceramic substrate
- laminated body
- high temperature
- fired
- low temperature
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- 239000000919 ceramic Substances 0.000 title claims abstract description 182
- 239000000758 substrate Substances 0.000 title claims abstract description 156
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000853 adhesive Substances 0.000 claims abstract description 18
- 230000001070 adhesive effect Effects 0.000 claims abstract description 18
- 238000010406 interfacial reaction Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 32
- 239000011521 glass Substances 0.000 claims description 29
- 238000010304 firing Methods 0.000 claims description 28
- 239000007772 electrode material Substances 0.000 claims description 8
- 238000011049 filling Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- WVHNUGRFECMVLQ-UHFFFAOYSA-N 1,3-dichloro-2-(2,4-dichlorophenyl)benzene Chemical compound ClC1=CC(Cl)=CC=C1C1=C(Cl)C=CC=C1Cl WVHNUGRFECMVLQ-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
- G01R1/07378—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/04—Punching, slitting or perforating
- B32B2038/047—Perforating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2305/00—Condition, form or state of the layers or laminate
- B32B2305/80—Sintered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/02—Temperature
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2311/00—Metals, their alloys or their compounds
- B32B2311/02—Noble metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
- B32B2315/02—Ceramics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
- B32B2315/08—Glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/06—Lamination
- H05K2203/061—Lamination of previously made multilayered subassemblies
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1126—Firing, i.e. heating a powder or paste above the melting temperature of at least one of its constituents
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
- H05K3/1291—Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets
Definitions
- the present invention relates to a ceramic substrate, a method of manufacturing the same, and an electrical device using the same, and more particularly, to a composite substrate having excellent electrical properties and chemical resistance, a method of manufacturing the same, and an electrical device using the same.
- a ceramic laminated substrate especially, a Low Temperature Co-fired Ceramic (LTCC) substrate, which is fired at a low temperature of about 1000° C. or less, has excellent electrical properties.
- LTCC substrate may perform complex functions while realizing ultra-miniaturization of a device using the LTCC substrate. Accordingly, LTCC substrate has been widely used in various technical fields.
- LTCC substrate has a low chemical resistance in spite of the excellent electrical properties. Accordingly, if used in a certain device, LTCC substrate may be melted, especially, during an etching process.
- a High Temperature Co-fired Ceramic (HTCC) substrate which is fired at a high temperature of about 1500° C. or more, has excellent mechanical strength and chemical resistance.
- HTCC High Temperature Co-fired Ceramic
- An aspect of the present invention provides to a composite substrate, a method of manufacturing the same, and an electrical device using the same, which has excellent electrical properties and chemical resistance or strength, and may be embodied as a multi-layer structure and a precise pattern.
- a ceramic substrate including: a first laminated body having a predetermined electrode formed therein; a second laminated body laminated on and electrically connected to the first laminated body; and an adhesive part intervened between the first laminated body and the second laminated body to adhere the first and second laminated bodies through interfacial reaction.
- the second laminated body may include a high temperature co-fired ceramic substrate.
- the first laminated body may include a low temperature co-fired ceramic substrate formed from a predetermined ceramic laminated body through a low temperature firing together with the high temperature co-fired ceramic substrate.
- the adhesive part may include a glass intervened between the ceramic laminated body and the high temperature co-fired ceramic substrate to provide a predetermined adhesion through the low temperature firing.
- the high temperature co-fired ceramic substrate may include a plurality of holes, the plurality of holes being filled with an electrode material identical to an electrode material of the low temperature co-fired ceramic substrate to form an electrode, and being fired together with the ceramic laminated body.
- the first laminated body may include an already-fired low temperature co-fired ceramic substrate.
- the adhesive part may include a glass intervened between the high ceramic co-fired ceramic substrate and the low temper co-fired ceramic substrate to provide adhesion through a low-temperature firing.
- the high temperature co-fired ceramic substrate may include a plurality of holes, the plurality of holes being filled with a predetermined material to form an electrode.
- the electrode formed in the high temperature co-fired ceramic substrate may be identical to the electrode formed in the low temperature co-fired ceramic substrate.
- an electrical device including: a low temperature co-fired ceramic substrate having a predetermined electrode formed therein; a high temperature co-fire ceramic substrate provided on the outside of the low temperature co-fired ceramic substrate; an adhesive part intervened between the first laminated body and the second laminated body to adhere the first and second laminated bodies through interfacial reaction; and a working device provided on the high temperature co-fired ceramic substrate to perform a predetermined task.
- the working device may include a probe device probing each chip in a silicon wafer to test the silicon wafer.
- a method of manufacturing a ceramic substrate including: laminating an adhesive part on a first laminated body having a predetermined electrode therein; laminating a second laminated body on the adhesive part; and firing the first laminated body, the second laminated body, and the adhesive part.
- the second laminated body may include a high temperature co-fired ceramic substrate.
- the first laminated body may include an unfired ceramic laminated body, the first laminated body being adhered to the high temperature co-fired ceramic substrate by the adhesive part through the firing.
- the first laminated body may include an already-fired low temperature co-fired ceramic substrate, the first laminated body being adhered to the high temperature co-fired ceramic substrate by the adhesive part through the firing.
- the firing may include a low-temperature firing performed within a sintering temperature range of the low temperature co-fired ceramic substrate.
- the adhesive part may include a glass sintered through the low-temperature firing, the glass providing a predetermined adhesion through interfacial reaction with the high temperature co-fired ceramic substrate and the low temperature co-fired ceramic substrate, respectively.
- the method further may include forming a plurality of holes in the high temperature co-fired ceramic substrate and filling the plurality of holes with a predetermined electrode material.
- the electrode material filled in the high temperature ceramic substrate may be identical to an electrode material filled in the electrode of the first laminated body.
- FIG. 1A through FIG. 1G are a diagram illustrating a ceramic substrate and a method of manufacturing the same according to an embodiment of the present invention
- FIG. 2A through FIG. 2F are a diagram illustrating a ceramic substrate and a method of manufacturing the same according to another embodiment of the present invention.
- FIG. 3 is a diagram illustrating an electrical device according to an embodiment of the present invention.
- FIG. 1 is a diagram illustrating a ceramic substrate and a method of manufacturing the same according to an embodiment of the present invention. A schematic process of manufacturing a ceramic substrate according to an embodiment of the present invention is described in FIG. 1A to 1G .
- the present invention basically relates a composite substrate of a high temperature co-fired ceramic (HTCC) substrate (hereinafter, referred to as a high temperature ceramic substrate) and a low temperature co-fired ceramic (LTCC) substrate (hereinafter, referred to as a low temperature ceramic substrate).
- FIG. 1 illustrates a method manufacturing a ceramic substrate by firing a ceramic laminated body laminated on an already-fired high temperature ceramic substrate at a low temperature.
- a high temperature ceramic substrate 20 is prepared.
- the high temperature ceramic substrate 20 has already been fired at a high temperature.
- the high temperature ceramic substrate 20 may be provided through a typical HTCC process.
- the high temperature ceramic substrate 20 is produced by sintering a sheet formed of alumina and the like at a high temperature of about 1500° C. or more.
- a via hole 21 is formed in the high temperature ceramic substrate 20 .
- the via hole 21 may be formed by a laser, etc.
- an electrode 22 is formed by filling the via hole 21 with a conductive paste.
- an electrode in the high temperature ceramic substrate 20 is referred to as a second electrode 22
- an electrode in the low temperature ceramic substrate 10 is referred to as a first electrode 11 .
- the second electrode 22 may be filled with a material having a substantially identical physical property to that of the first electrode 11 .
- a normal high temperature ceramic substrate is formed using a heavy metal such as tungsten or molybdenum resistant to heat.
- the heavy metal such as tungsten or molybdenum is not preferable because their electrical properties are inferior to copper or argentum.
- the electrode may be formed by filling the via hole 21 with, but not limited to, copper or argentum in FIG. 1B and 1C .
- tungsten or molybdenum may be used to form the electrode while firing the high temperature ceramic substrate in the process of manufacturing the ceramic substrate according to an embodiment of the present invention.
- the processes as described in FIG. 1B and 1C may be unnecessary.
- the second electrode 22 may be formed of a material having similar electrical properties to a material forming the first electrode 11 .
- a plurality of ceramic laminated sheets 12 are provided to form the low temperature ceramic substrate of the ceramic substrate according to an embodiment of the present invention.
- Each ceramic laminated sheet 12 includes an electrode formed of copper or argentum, i.e., the first electrode 11 .
- the plurality of ceramic laminated sheets 12 may be formed of a material, e.g., borosilicate glass, alumina, etc, which is sinterable at a low temperature.
- the ceramic laminated sheet 12 may be formed through the following processes. First, a slurry is formed by mixing a ceramic powder with a solvent and a binder. The slurry is coated on a predetermined film and dried into a thin sheet shape. Then, after a via hole is formed in the thin sheet by a laser or a puncher, the via hole is filled with a conductive paste such as copper or argentum to form an electrode. Then, an internal pattern is designed through a screen printing method.
- the plurality of ceramic laminated sheets 12 are laminated on each other to form the ceramic laminated body 13 .
- a glass 30 is laminated on the top surface or undersurface of the ceramic laminated body 13 .
- the glass 30 may be formed of a material, which may be sintered at a temperature substantially identical to or lower than the sintering temperature of the ceramic laminated body 13 .
- the glass 30 serves to adhere the ceramic laminated body 13 and the high temperature ceramic substrate 20 to each other while the ceramic laminated body 13 becomes the low temperature ceramic substrate through a low temperature firing process.
- the ceramic laminated sheet 12 may be pressed at a predetermined pressure to be the ceramic laminated body 13 . However, the pressure process may be performed at some later time.
- the ceramic substrate according to an embodiment of the present invention may be formed by laminating the high temperature ceramic substrate 20 on the glass 30 laminated on the ceramic laminated body 13 .
- the high temperature ceramic substrate 20 serves as a constraint body. That is, when the ceramic laminated body 13 becomes the low temperature ceramic substrate through the firing process, the high temperature ceramic substrate 20 serves as a constraint body without requiring any other constraint body to apply a non-shrinkage method.
- the method of manufacturing the ceramic substrate according to an embodiment of the present invention does not require the separate constraint body. Accordingly, there is no inconvenience caused by the lamination and removal of the constraint body.
- the ceramic laminated body 13 , the glass 30 , and the high temperature ceramic substrate 20 may be pressed at a predetermined pressure to be united into one body to a certain extent.
- the ceramic laminated body 13 , the glass 30 , and the high temperature ceramic substrate 20 are fired at a low temperature, only the ceramic laminated 13 and the glass 30 are fired without a significant firing effect on the high temperature ceramic substrate 20 . This is because the high temperature ceramic substrate 20 has already been fired at a high temperature.
- FIG. 1G illustrates a ceramic substrate completed through the above firing processes.
- the ceramic laminated body 13 After the ceramic laminated body 13 , the glass 30 and the high temperature ceramic substrate 20 are fired at a low temperature of about 1000° C. or less, the ceramic laminated body 13 becomes the low temperature ceramic substrate 10 , and the glass 30 is combined with the high temperature ceramic substrate and the low temperature ceramic substrate 10 through interfacial reaction.
- the glass 30 may begin to be fired at a somewhat lower temperature than the ceramic laminated body 13 . Accordingly, when the ceramic laminated body 13 is fired, the glass 30 provides interfacial adhesions by the interfacial reaction with the high temperature ceramic substrate 20 and the ceramic laminated body 13 .
- the glass 30 which begins to be fired at a lower temperature than the firing temperature of the ceramic laminated body 13 , may include B 2 O 3 , SiO 2 , etc.
- the glass 30 may buff or prevent a separation or a crack caused by a low adhesion at an interface between the high temperature ceramic substrate 20 and the ceramic laminated body 13 .
- the ceramic substrate 1 manufactured by the above process is divided into the high temperature ceramic substrate 20 , the low temperature ceramic substrate 10 , and the glass 30 disposed therebetween.
- the high temperature ceramic substrate 20 may be allowed to be exposed to an environment requiring a high chemical resistance due to strong chemical resistance and mechanical strength of the high temperature ceramic substrate 20 .
- the excellent electrical properties of the low temperature ceramic substrate 10 are usable (an electrode substantially identical to that of the low temperature ceramic substrate 10 maybe prepared in the high temperature ceramic substrate 20 ). Also, multi-layer or precise pattern may be embodied in the low temperature ceramic substrate 10 .
- Brittleness of the high temperature ceramic substrate 20 may be improved due to its strong mechanical strength. Accordingly, a strong substrate endurable to an external shock can be manufactured.
- a ceramic substrate and a method of manufacturing the same according to another embodiment of the present invention will be described with reference to FIG. 2 .
- FIGS. 2A to 2F illustrate a method of manufacturing a ceramic substrate by adhering an already-fired high temperature ceramic substrate and an already-fired low temperature ceramic substrate to each other.
- a high temperature ceramic substrate 20 is prepared.
- the high temperature ceramic substrate 20 is an already-high temperature fired substrate.
- the high temperature ceramic substrate 20 may be provided through a typical HTCC process. Detail description of the process will be omitted since it has already been described above.
- a via hole 21 is formed in the high temperature ceramic substrate 20 by a laser, etc.
- a second electrode 22 is formed by filling the via hole 21 with a conductive paste.
- the second electrode 22 may be identical to or different from a first electrode 11 of a low temperature ceramic substrate, which is substantially identical to the embodiment as described in FIG. 1 . Accordingly, description thereof will be omitted herein.
- a low temperature ceramic substrate 10 is prepared, which may be a substrate manufactured by a typical LTCC method.
- via holes are formed in a plurality of ceramic laminated sheets. Then, the via hole is filled with a conductive paste to form an electrode.
- the ceramic laminated sheets are laminated on each other.
- a certain constraint body is laminated on the ceramic laminated sheets. And then, the ceramic laminated body is pressed at a predetermined pressure, and is fired at a low temperature. Finally, the low temperature ceramic substrate 10 may be obtained by removing the constraint body.
- a glass 30 is laminated on the top surface or undersurface of the low temperature ceramic substrate 10 .
- the high temperature ceramic substrate 20 is laminated on the glass 30 .
- the low temperature ceramic substrate 10 , the glass 30 , and the high temperature ceramic substrate 20 may be pressed at a predetermined pressure.
- the low temperature ceramic substrate 10 , the glass 30 , and the high temperature ceramic substrate 20 are fired at a low temperature.
- the high temperature ceramic substrate 30 and the low temperature ceramic substrate 10 have already been fired, the high temperature ceramic substrate 30 and the low temperature ceramic substrate 10 are not significantly influenced by the low temperature firing.
- the glass 30 and the second electrode 22 of the high temperature ceramic substrate 30 are influenced by the low temperature firing.
- the glass 30 provides interfacial adhesions by the interfacial reaction with the low temperature ceramic substrate 10 and the high temperature ceramic substrate 30 so as to combine the low and high ceramic substrates 10 and 30 into one ceramic substrate 1 .
- the ceramic substrate 1 may include a part of the high temperature ceramic substrate 20 having strong chemical resistance and mechanical strength, and a part of the low temperature ceramic substrate 10 . Accordingly, the ceramic substrate 1 may realize a device capable of performing tasks requiring high electrical properties and precision under an environment requiring high chemical resistance and mechanical strength.
- a probe card 50 is described as an example of the electrical device in FIG. 3 .
- FIG. 3 illustrates a part of the probe card 50 .
- the probe card 50 may include a PCB 51 mounted with predetermined components, a ceramic substrate 1 connected to the PCB 51 , and a probe 53 provided on the ceramic substrate 1 .
- the ceramic substrate 1 and the PCB 51 are electrically connected to a connector 52 . Also, a silicon wafer S is shown in FIG. 3 .
- etching process When each chip of the silicon wafer is probed using the probe card 50 , an etching process is required. During the etching process, strong chemical resistance is required due to a long-time exposure to strongly acidic hydrogen fluoride (HF) solution or strongly alkaline potassium hydroxide (KOH) solution.
- HF strongly acidic hydrogen fluoride
- KOH strongly alkaline potassium hydroxide
- the ceramic substrate 1 used in the electrical device allows the high temperature ceramic substrate 30 to be exposed to the silicon wafer S, and allows the low temperature ceramic substrate 10 to be positioned therein. Accordingly, chemical resistance as well as electrical properties can be improved.
- the ceramic substrate and method of manufacturing the same according to the exemplary embodiments has excellent electrical properties, and chemical resistance and strength, and can be embodied as a multi-layer structure and a precise pattern. Accordingly, it is possible to manufacture a high-reliability substrate through a non-shrinkage process without any constraint body.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Provided are a ceramic substrate, a method of manufacturing the same, and an electrical device using the same. A ceramic substrate includes a first laminated body, a second laminated body and an adhesive part. The first laminated body includes a predetermined electrode formed therein. The second laminated body is laminated on and electrically connected to the first laminated body. Also, the adhesive part is intervened between the first laminated body and the second laminated body to adhere the first and second laminated bodies through interfacial reaction.
Description
- This application claims the priority of Korean Patent Application No. 2007-0139194 filed on 27 Dec. 2007, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.
- 1. Field of the Invention
- The present invention relates to a ceramic substrate, a method of manufacturing the same, and an electrical device using the same, and more particularly, to a composite substrate having excellent electrical properties and chemical resistance, a method of manufacturing the same, and an electrical device using the same.
- 2. Description of the Related Art
- Generally, a ceramic laminated substrate, especially, a Low Temperature Co-fired Ceramic (LTCC) substrate, which is fired at a low temperature of about 1000° C. or less, has excellent electrical properties. Also, LTCC substrate may perform complex functions while realizing ultra-miniaturization of a device using the LTCC substrate. Accordingly, LTCC substrate has been widely used in various technical fields.
- However, LTCC substrate has a low chemical resistance in spite of the excellent electrical properties. Accordingly, if used in a certain device, LTCC substrate may be melted, especially, during an etching process.
- On the other hand, a High Temperature Co-fired Ceramic (HTCC) substrate, which is fired at a high temperature of about 1500° C. or more, has excellent mechanical strength and chemical resistance. However, when high temperature ceramic substrate is used in a certain device, implementations of multi-layer and precise pattern may be difficult. Also, high temperature ceramic substrate has weak electrical properties.
- Therefore, development of a ceramic substrate capable of embodying a multi-layer structure and a precise pattern with excellent chemical resistance and electrical properties is required.
- An aspect of the present invention provides to a composite substrate, a method of manufacturing the same, and an electrical device using the same, which has excellent electrical properties and chemical resistance or strength, and may be embodied as a multi-layer structure and a precise pattern.
- According to an aspect of the present invention, there is provided a ceramic substrate including: a first laminated body having a predetermined electrode formed therein; a second laminated body laminated on and electrically connected to the first laminated body; and an adhesive part intervened between the first laminated body and the second laminated body to adhere the first and second laminated bodies through interfacial reaction.
- The second laminated body may include a high temperature co-fired ceramic substrate.
- The first laminated body may include a low temperature co-fired ceramic substrate formed from a predetermined ceramic laminated body through a low temperature firing together with the high temperature co-fired ceramic substrate.
- The adhesive part may include a glass intervened between the ceramic laminated body and the high temperature co-fired ceramic substrate to provide a predetermined adhesion through the low temperature firing.
- The high temperature co-fired ceramic substrate may include a plurality of holes, the plurality of holes being filled with an electrode material identical to an electrode material of the low temperature co-fired ceramic substrate to form an electrode, and being fired together with the ceramic laminated body.
- The first laminated body may include an already-fired low temperature co-fired ceramic substrate.
- The adhesive part may include a glass intervened between the high ceramic co-fired ceramic substrate and the low temper co-fired ceramic substrate to provide adhesion through a low-temperature firing.
- The high temperature co-fired ceramic substrate may include a plurality of holes, the plurality of holes being filled with a predetermined material to form an electrode.
- The electrode formed in the high temperature co-fired ceramic substrate may be identical to the electrode formed in the low temperature co-fired ceramic substrate.
- According to another aspect of the present invention, there is provided an electrical device including: a low temperature co-fired ceramic substrate having a predetermined electrode formed therein; a high temperature co-fire ceramic substrate provided on the outside of the low temperature co-fired ceramic substrate; an adhesive part intervened between the first laminated body and the second laminated body to adhere the first and second laminated bodies through interfacial reaction; and a working device provided on the high temperature co-fired ceramic substrate to perform a predetermined task.
- The working device may include a probe device probing each chip in a silicon wafer to test the silicon wafer.
- According to still another aspect of the present invention, there is provided a method of manufacturing a ceramic substrate, the method including: laminating an adhesive part on a first laminated body having a predetermined electrode therein; laminating a second laminated body on the adhesive part; and firing the first laminated body, the second laminated body, and the adhesive part.
- The second laminated body may include a high temperature co-fired ceramic substrate.
- The first laminated body may include an unfired ceramic laminated body, the first laminated body being adhered to the high temperature co-fired ceramic substrate by the adhesive part through the firing.
- The first laminated body may include an already-fired low temperature co-fired ceramic substrate, the first laminated body being adhered to the high temperature co-fired ceramic substrate by the adhesive part through the firing.
- The firing may include a low-temperature firing performed within a sintering temperature range of the low temperature co-fired ceramic substrate.
- The adhesive part may include a glass sintered through the low-temperature firing, the glass providing a predetermined adhesion through interfacial reaction with the high temperature co-fired ceramic substrate and the low temperature co-fired ceramic substrate, respectively.
- Prior to the firing, the method further may include forming a plurality of holes in the high temperature co-fired ceramic substrate and filling the plurality of holes with a predetermined electrode material.
- The electrode material filled in the high temperature ceramic substrate may be identical to an electrode material filled in the electrode of the first laminated body.
- The above and other aspects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
-
FIG. 1A throughFIG. 1G are a diagram illustrating a ceramic substrate and a method of manufacturing the same according to an embodiment of the present invention; -
FIG. 2A throughFIG. 2F are a diagram illustrating a ceramic substrate and a method of manufacturing the same according to another embodiment of the present invention; and -
FIG. 3 is a diagram illustrating an electrical device according to an embodiment of the present invention. - Hereinafter, exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
-
FIG. 1 is a diagram illustrating a ceramic substrate and a method of manufacturing the same according to an embodiment of the present invention. A schematic process of manufacturing a ceramic substrate according to an embodiment of the present invention is described inFIG. 1A to 1G . - The present invention basically relates a composite substrate of a high temperature co-fired ceramic (HTCC) substrate (hereinafter, referred to as a high temperature ceramic substrate) and a low temperature co-fired ceramic (LTCC) substrate (hereinafter, referred to as a low temperature ceramic substrate).
FIG. 1 illustrates a method manufacturing a ceramic substrate by firing a ceramic laminated body laminated on an already-fired high temperature ceramic substrate at a low temperature. - Referring to
FIG. 1A , a high temperatureceramic substrate 20 is prepared. The high temperatureceramic substrate 20 has already been fired at a high temperature. The high temperatureceramic substrate 20 may be provided through a typical HTCC process. - That is, The high temperature
ceramic substrate 20 is produced by sintering a sheet formed of alumina and the like at a high temperature of about 1500° C. or more. - Referring to
FIG. 1B , avia hole 21 is formed in the high temperatureceramic substrate 20. Thevia hole 21 may be formed by a laser, etc. - Referring to of
FIG. 1C , anelectrode 22 is formed by filling thevia hole 21 with a conductive paste. - Compared to an
electrode 11 provided in a ceramic laminatedsheet 12, a ceramic laminatedbody 13, or aLTCC substrate 10, an electrode in the high temperatureceramic substrate 20 is referred to as asecond electrode 22, and an electrode in the low temperatureceramic substrate 10 is referred to as afirst electrode 11. - The
second electrode 22 may be filled with a material having a substantially identical physical property to that of thefirst electrode 11. - That is, since fired at a high temperature, a normal high temperature ceramic substrate is formed using a heavy metal such as tungsten or molybdenum resistant to heat. However, the heavy metal such as tungsten or molybdenum is not preferable because their electrical properties are inferior to copper or argentum.
- Accordingly, the electrode may be formed by filling the via
hole 21 with, but not limited to, copper or argentum inFIG. 1B and 1C . - However, as the case may be, tungsten or molybdenum may be used to form the electrode while firing the high temperature ceramic substrate in the process of manufacturing the ceramic substrate according to an embodiment of the present invention.
- If the metal such as tungsten and molybdenum is used in the high
temperature ceramic substrate 20, the processes as described inFIG. 1B and 1C may be unnecessary. - Although the metal such as tungsten and molybdenum is not used, it is not necessary to equalize the
second electrode 22 with thefirst electrode 11. Thesecond electrode 22 may be formed of a material having similar electrical properties to a material forming thefirst electrode 11. - On the other hand, referring to
FIG. 1D , a plurality of ceramiclaminated sheets 12 are provided to form the low temperature ceramic substrate of the ceramic substrate according to an embodiment of the present invention. - Each ceramic
laminated sheet 12 includes an electrode formed of copper or argentum, i.e., thefirst electrode 11. The plurality of ceramiclaminated sheets 12 may be formed of a material, e.g., borosilicate glass, alumina, etc, which is sinterable at a low temperature. - The ceramic
laminated sheet 12 may be formed through the following processes. First, a slurry is formed by mixing a ceramic powder with a solvent and a binder. The slurry is coated on a predetermined film and dried into a thin sheet shape. Then, after a via hole is formed in the thin sheet by a laser or a puncher, the via hole is filled with a conductive paste such as copper or argentum to form an electrode. Then, an internal pattern is designed through a screen printing method. - Referring to
FIG. 1E , the plurality of ceramiclaminated sheets 12 are laminated on each other to form the ceramiclaminated body 13. - Also, a
glass 30 is laminated on the top surface or undersurface of the ceramiclaminated body 13. Theglass 30 may be formed of a material, which may be sintered at a temperature substantially identical to or lower than the sintering temperature of the ceramiclaminated body 13. - The
glass 30 serves to adhere the ceramiclaminated body 13 and the hightemperature ceramic substrate 20 to each other while the ceramiclaminated body 13 becomes the low temperature ceramic substrate through a low temperature firing process. - The ceramic
laminated sheet 12 may be pressed at a predetermined pressure to be the ceramiclaminated body 13. However, the pressure process may be performed at some later time. - Referring to
FIG. 1F , the ceramic substrate according to an embodiment of the present invention may be formed by laminating the hightemperature ceramic substrate 20 on theglass 30 laminated on the ceramiclaminated body 13. - In this case, the high
temperature ceramic substrate 20 serves as a constraint body. That is, when the ceramiclaminated body 13 becomes the low temperature ceramic substrate through the firing process, the hightemperature ceramic substrate 20 serves as a constraint body without requiring any other constraint body to apply a non-shrinkage method. - Generally, when the low temperature ceramic substrate is manufactured through the non-shrinkage method, a separate constraint body is laminated, and removed after the low temperature firing. However, the method of manufacturing the ceramic substrate according to an embodiment of the present invention does not require the separate constraint body. Accordingly, there is no inconvenience caused by the lamination and removal of the constraint body.
- As described in
FIG. 1F , the ceramiclaminated body 13, theglass 30, and the hightemperature ceramic substrate 20 may be pressed at a predetermined pressure to be united into one body to a certain extent. - On the other hand, when the ceramic
laminated body 13, theglass 30, and the hightemperature ceramic substrate 20 are fired at a low temperature, only the ceramic laminated 13 and theglass 30 are fired without a significant firing effect on the hightemperature ceramic substrate 20. This is because the hightemperature ceramic substrate 20 has already been fired at a high temperature. -
FIG. 1G illustrates a ceramic substrate completed through the above firing processes. - After the ceramic
laminated body 13, theglass 30 and the hightemperature ceramic substrate 20 are fired at a low temperature of about 1000° C. or less, the ceramiclaminated body 13 becomes the lowtemperature ceramic substrate 10, and theglass 30 is combined with the high temperature ceramic substrate and the lowtemperature ceramic substrate 10 through interfacial reaction. - Through the firing process, the
glass 30 may begin to be fired at a somewhat lower temperature than the ceramiclaminated body 13. Accordingly, when the ceramiclaminated body 13 is fired, theglass 30 provides interfacial adhesions by the interfacial reaction with the hightemperature ceramic substrate 20 and the ceramiclaminated body 13. - The
glass 30, which begins to be fired at a lower temperature than the firing temperature of the ceramiclaminated body 13, may include B2O3, SiO2, etc. - If the
glass 30 is fired at a low temperature after laminated on the hightemperature ceramic substrate 20 and the ceramiclaminated body 13, theglass 30 may buff or prevent a separation or a crack caused by a low adhesion at an interface between the hightemperature ceramic substrate 20 and the ceramiclaminated body 13. - Referring to
FIG. 1G , theceramic substrate 1 manufactured by the above process is divided into the hightemperature ceramic substrate 20, the lowtemperature ceramic substrate 10, and theglass 30 disposed therebetween. - Accordingly, when the
ceramic substrate 1 is used in a device for a chemical process, the hightemperature ceramic substrate 20 may be allowed to be exposed to an environment requiring a high chemical resistance due to strong chemical resistance and mechanical strength of the hightemperature ceramic substrate 20. - Although in such an environment, the excellent electrical properties of the low
temperature ceramic substrate 10 are usable (an electrode substantially identical to that of the lowtemperature ceramic substrate 10 maybe prepared in the high temperature ceramic substrate 20). Also, multi-layer or precise pattern may be embodied in the lowtemperature ceramic substrate 10. - Brittleness of the high
temperature ceramic substrate 20 may be improved due to its strong mechanical strength. Accordingly, a strong substrate endurable to an external shock can be manufactured. - A ceramic substrate and a method of manufacturing the same according to another embodiment of the present invention will be described with reference to
FIG. 2 . -
FIGS. 2A to 2F illustrate a method of manufacturing a ceramic substrate by adhering an already-fired high temperature ceramic substrate and an already-fired low temperature ceramic substrate to each other. - Referring to
FIG. 2A , a hightemperature ceramic substrate 20 is prepared. The hightemperature ceramic substrate 20 is an already-high temperature fired substrate. The hightemperature ceramic substrate 20 may be provided through a typical HTCC process. Detail description of the process will be omitted since it has already been described above. - Referring to
FIG. 2B , a viahole 21 is formed in the hightemperature ceramic substrate 20 by a laser, etc. - Referring to of
FIG. 2C , asecond electrode 22 is formed by filling the viahole 21 with a conductive paste. - The
second electrode 22 may be identical to or different from afirst electrode 11 of a low temperature ceramic substrate, which is substantially identical to the embodiment as described inFIG. 1 . Accordingly, description thereof will be omitted herein. - Referring to
FIG. 2D , a lowtemperature ceramic substrate 10 is prepared, which may be a substrate manufactured by a typical LTCC method. - For example, via holes are formed in a plurality of ceramic laminated sheets. Then, the via hole is filled with a conductive paste to form an electrode. The ceramic laminated sheets are laminated on each other. A certain constraint body is laminated on the ceramic laminated sheets. And then, the ceramic laminated body is pressed at a predetermined pressure, and is fired at a low temperature. Finally, the low
temperature ceramic substrate 10 may be obtained by removing the constraint body. - As described in
FIG. 2D , aglass 30 is laminated on the top surface or undersurface of the lowtemperature ceramic substrate 10. - Referring to
FIG. 2E , after aglass 30 is laminated on the lowtemperature ceramic substrate 10, the hightemperature ceramic substrate 20 is laminated on theglass 30. In order to enhance adhesion between them, the lowtemperature ceramic substrate 10, theglass 30, and the hightemperature ceramic substrate 20 may be pressed at a predetermined pressure. - Then, the low
temperature ceramic substrate 10, theglass 30, and the hightemperature ceramic substrate 20 are fired at a low temperature. - In this case, because the high
temperature ceramic substrate 30 and the lowtemperature ceramic substrate 10 have already been fired, the hightemperature ceramic substrate 30 and the lowtemperature ceramic substrate 10 are not significantly influenced by the low temperature firing. On the other hand, theglass 30 and thesecond electrode 22 of the hightemperature ceramic substrate 30 are influenced by the low temperature firing. - The
glass 30 provides interfacial adhesions by the interfacial reaction with the lowtemperature ceramic substrate 10 and the hightemperature ceramic substrate 30 so as to combine the low and highceramic substrates ceramic substrate 1. - The
ceramic substrate 1 according to this embodiment may include a part of the hightemperature ceramic substrate 20 having strong chemical resistance and mechanical strength, and a part of the lowtemperature ceramic substrate 10. Accordingly, theceramic substrate 1 may realize a device capable of performing tasks requiring high electrical properties and precision under an environment requiring high chemical resistance and mechanical strength. - An electrical device employing a ceramic substrate according to an embodiment of the present invention will be described with reference to
FIG. 3 . Aprobe card 50 is described as an example of the electrical device inFIG. 3 . -
FIG. 3 illustrates a part of theprobe card 50. Theprobe card 50 may include aPCB 51 mounted with predetermined components, aceramic substrate 1 connected to thePCB 51, and aprobe 53 provided on theceramic substrate 1. - The
ceramic substrate 1 and thePCB 51 are electrically connected to aconnector 52. Also, a silicon wafer S is shown inFIG. 3 . - When each chip of the silicon wafer is probed using the
probe card 50, an etching process is required. During the etching process, strong chemical resistance is required due to a long-time exposure to strongly acidic hydrogen fluoride (HF) solution or strongly alkaline potassium hydroxide (KOH) solution. - As described in
FIG. 3 , theceramic substrate 1 used in the electrical device according to an embodiment of the present invention allows the hightemperature ceramic substrate 30 to be exposed to the silicon wafer S, and allows the lowtemperature ceramic substrate 10 to be positioned therein. Accordingly, chemical resistance as well as electrical properties can be improved. - Detail description of the
glass 30, afirst electrode 11 of the lowtemperature ceramic substrate 10, and asecond electrode 22 of the hightemperature ceramic substrate 20 will be omitted because it has already been described inFIGS. 1 and 2 . - The ceramic substrate and method of manufacturing the same according to the exemplary embodiments has excellent electrical properties, and chemical resistance and strength, and can be embodied as a multi-layer structure and a precise pattern. Accordingly, it is possible to manufacture a high-reliability substrate through a non-shrinkage process without any constraint body.
- While the present invention has been shown and described in connection with the exemplary embodiments, it will be apparent to those skilled in the art that modifications and variations can be made without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1-11. (canceled)
12. A method of manufacturing a ceramic substrate, the method comprising:
laminating an adhesive part on a first laminated body having a predetermined electrode therein;
laminating a second laminated body on the adhesive part; and
firing the first laminated body, the second laminated body, and the adhesive part.
13. The method of claim 12 , wherein the second laminated body comprises a high temperature co-fired ceramic substrate.
14. The method of claim 13 , wherein the first laminated body comprises an unfired ceramic laminated body, the first laminated body being adhered to the high temperature co-fired ceramic substrate by the adhesive part through the firing.
15. The method of claim 13 , wherein the first laminated body comprises an already-fired low temperature co-fired ceramic substrate, the first laminated body being adhered to the high temperature co-fired ceramic substrate by the adhesive part through the firing.
16. The method of claim 14 , wherein the firing comprises a low-temperature firing performed within a sintering temperature range of the low temperature co-fired ceramic substrate.
17. The method of claim 16 , wherein the adhesive part comprises a glass sintered through the low-temperature firing, the glass providing a predetermined adhesion through interfacial reaction with the high temperature co-fired ceramic substrate and the low temperature co-fired ceramic substrate, respectively.
18. The method of any of claims 13 , prior to the firing, further comprising forming a plurality of holes in the high temperature co-fired ceramic substrate and filling the plurality of holes with a predetermined electrode material.
19. The method of claim 18 , wherein the electrode material filled in the high temperature ceramic substrate is identical to an electrode material filled in the electrode of the first laminated body.
Priority Applications (1)
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US13/295,819 US20120055610A1 (en) | 2007-12-27 | 2011-11-14 | Ceramic substrate, method of manufacturing the same, and electrical device using the same |
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KR1020070139194A KR101046134B1 (en) | 2007-12-27 | 2007-12-27 | Ceramic substrate, manufacturing method thereof and electric device using same |
KR10-2007-0139194 | 2007-12-27 | ||
US12/342,907 US8080737B2 (en) | 2007-12-27 | 2008-12-23 | Ceramic substrate, method of manufacturing the same, and electrical device using the same |
US13/295,819 US20120055610A1 (en) | 2007-12-27 | 2011-11-14 | Ceramic substrate, method of manufacturing the same, and electrical device using the same |
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US12/342,907 Division US8080737B2 (en) | 2007-12-27 | 2008-12-23 | Ceramic substrate, method of manufacturing the same, and electrical device using the same |
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US12/342,907 Active 2030-05-05 US8080737B2 (en) | 2007-12-27 | 2008-12-23 | Ceramic substrate, method of manufacturing the same, and electrical device using the same |
US13/295,819 Abandoned US20120055610A1 (en) | 2007-12-27 | 2011-11-14 | Ceramic substrate, method of manufacturing the same, and electrical device using the same |
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US12/342,907 Active 2030-05-05 US8080737B2 (en) | 2007-12-27 | 2008-12-23 | Ceramic substrate, method of manufacturing the same, and electrical device using the same |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5384434A (en) * | 1992-03-02 | 1995-01-24 | Murata Manufacturing Co., Ltd. | Multilayer ceramic circuit board |
US5604018A (en) * | 1993-06-25 | 1997-02-18 | Shinko Electric Industries, Co., Ltd. | Ceramic oxide circuit board |
US5769987A (en) * | 1996-11-20 | 1998-06-23 | Northrop Grumman Cropration | Post-firing method for integrating passive devices into ceramic electronic packages |
US6036798A (en) * | 1992-05-28 | 2000-03-14 | Murata Manufacturing Co., Ltd. | Process for producing electronic part with laminated substrates |
US20040095501A1 (en) * | 2002-06-28 | 2004-05-20 | Kyocera Corporation | Imaging device package camera module and camera module producing method |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63181400A (en) * | 1987-01-22 | 1988-07-26 | 松下電器産業株式会社 | Ceramic multilayer board |
JP3331083B2 (en) * | 1995-03-06 | 2002-10-07 | 株式会社住友金属エレクトロデバイス | Low temperature firing ceramic circuit board |
US5740603A (en) * | 1995-07-31 | 1998-04-21 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing low dielectric constant multiple layer ceramic circuit board |
JPH09246723A (en) * | 1996-03-11 | 1997-09-19 | Sumitomo Kinzoku Electro Device:Kk | Low-temp. baked ceramic circuit substrate |
US6146743A (en) * | 1997-02-21 | 2000-11-14 | Medtronic, Inc. | Barrier metallization in ceramic substrate for implantable medical devices |
JP3396468B2 (en) | 1999-10-26 | 2003-04-14 | イビデン株式会社 | Wafer prober and ceramic substrate used for wafer prober |
JP3716783B2 (en) * | 2001-11-22 | 2005-11-16 | 株式会社村田製作所 | Method for manufacturing ceramic multilayer substrate and semiconductor device |
US6703114B1 (en) * | 2002-10-17 | 2004-03-09 | Arlon | Laminate structures, methods for production thereof and uses therefor |
KR100447032B1 (en) * | 2002-12-02 | 2004-09-07 | 전자부품연구원 | Resistor-buried multilayer low-temperature-cofired-ceramic substrate with flat surface and fabrication method thereof |
US6809269B2 (en) * | 2002-12-19 | 2004-10-26 | Endicott Interconnect Technologies, Inc. | Circuitized substrate assembly and method of making same |
JP4606115B2 (en) | 2004-10-20 | 2011-01-05 | 京セラ株式会社 | Multilayer substrate and manufacturing method thereof |
WO2006059556A1 (en) * | 2004-12-02 | 2006-06-08 | Murata Manufacturing Co., Ltd. | Electronic component and production method therefor |
JP2006173240A (en) | 2004-12-14 | 2006-06-29 | Matsushita Electric Ind Co Ltd | Method for manufacturing ceramic substrate |
KR100710459B1 (en) * | 2006-02-24 | 2007-04-24 | 요업기술원 | Method for preparating the low temperature cofired ceramic layer havig glass layer, and electrical module using low temperature cofired ceramic |
-
2007
- 2007-12-27 KR KR1020070139194A patent/KR101046134B1/en active IP Right Grant
-
2008
- 2008-12-23 US US12/342,907 patent/US8080737B2/en active Active
-
2011
- 2011-11-14 US US13/295,819 patent/US20120055610A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5384434A (en) * | 1992-03-02 | 1995-01-24 | Murata Manufacturing Co., Ltd. | Multilayer ceramic circuit board |
US6036798A (en) * | 1992-05-28 | 2000-03-14 | Murata Manufacturing Co., Ltd. | Process for producing electronic part with laminated substrates |
US5604018A (en) * | 1993-06-25 | 1997-02-18 | Shinko Electric Industries, Co., Ltd. | Ceramic oxide circuit board |
US5769987A (en) * | 1996-11-20 | 1998-06-23 | Northrop Grumman Cropration | Post-firing method for integrating passive devices into ceramic electronic packages |
US20040095501A1 (en) * | 2002-06-28 | 2004-05-20 | Kyocera Corporation | Imaging device package camera module and camera module producing method |
Also Published As
Publication number | Publication date |
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KR20090071010A (en) | 2009-07-01 |
US20090166073A1 (en) | 2009-07-02 |
US8080737B2 (en) | 2011-12-20 |
KR101046134B1 (en) | 2011-07-01 |
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