US20100224859A1 - Organic Light-Emitting Diodes with Electrophosphorescent-Coated Emissive Quantum Dots - Google Patents

Organic Light-Emitting Diodes with Electrophosphorescent-Coated Emissive Quantum Dots Download PDF

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US20100224859A1
US20100224859A1 US12/738,404 US73840408A US2010224859A1 US 20100224859 A1 US20100224859 A1 US 20100224859A1 US 73840408 A US73840408 A US 73840408A US 2010224859 A1 US2010224859 A1 US 2010224859A1
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Neil Gough
Christopher Williams
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    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/18—Metal complexes
    • C09K2211/185—Metal complexes of the platinum group, i.e. Os, Ir, Pt, Ru, Rh or Pd
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium

Definitions

  • the present invention relates to a composition comprising quantum dots and a coating material that comprises an electro-phosphorescent moiety, and methods for producing and using the same.
  • OLEDs Organic light-emitting diodes
  • the basic structure of a multilayer OLED was introduced by Eastman-Kodak in 1987, and since then many developments have been made to improve the overall performance of these devices.
  • One significant milestone was achieved with the development of an organic guest-host system, in which a small concentration of a fluorescent laser dye (guest) is co-evaporated with a host material.
  • guest fluorescent laser dye
  • This advancement provided improved electroluminescence from the singlet state. It is believed that such a system relies on a Förster-type energy transfer process of the host singlet exciton to a guest singlet state.
  • the internal quantum efficiency of such a system is generally believed to be limited to approximately 25% because about 75% of the excitons form in the triplet configuration, for which emission is forbidden by spin conservation.
  • QDs quantum dots
  • OLED organic light emitting diode
  • electro-phosphorescent moiety is capable of Förster transfer of singlets, Dexter transfer of triplets, or a combination thereof.
  • the quantum dot and the electro-phosphorescent moiety have similar emission spectra. While in other embodiments, the quantum dot and the electro-phosphorescent moiety have dissimilar emission spectra.
  • OLED compositions of the invention further comprise an emissive material.
  • emissive materials include, but are not limited to, BCP, TPBi, Alq3, or a combination thereof.
  • the quantum dot is an inorganic semiconductor particle. In some instances, the quantum dot has a diameter of less than 25 nm. Yet in other instances, the quantum dot comprises a transition metal.
  • the electro-phosphorescent moiety comprises an organometallic moiety.
  • the organometallic moiety comprises a transition metal or a lanthanide metal.
  • the electro-phosphorescent moiety comprises FIr(pic), Ir(ppy) 3 , Btp 2 (acac), Bt 2 (acac), or a combination thereof.
  • the coating material further comprises a linker.
  • the linker can be non-covalently attached to the surface of the quantum dot, for example, by Van der Waal's force, an ionic interaction, hydrogen bonding, etc.
  • OLED organic light emitting diode
  • the methods generally include coating a quantum dot with a coating material that comprises an electro-phosphorescent moiety.
  • OLED organic light emitting diode
  • the OLED devices further comprise one or more emission modification layers between the electro-phosphorescent quantum dot layer and the cathode.
  • the emission modification layers comprise:
  • the electro-phosphorescent quantum dot layer further comprises one or more dopants.
  • inventions for producing an OLED device.
  • the methods typically comprise:
  • the step of producing the emission modification layers comprises:
  • FIG. 1 is a schematic representation of one particular embodiment of the present invention illustrating the structure of a quantum dot in close proximity to an electro-phosphorescent moiety
  • FIG. 2 is a schematic representation of some of the various OLED device structures of the present invention comprising a layer of quantum dots coated with an electro-phosphorescent compound;
  • FIG. 3 is a graph of voltage versus luminance for an example device
  • FIG. 4 is a graph of voltage versus current efficiency for an example device
  • FIG. 5 is a graph of voltage versus current density for an example device.
  • FIG. 6 is an electroluminescent spectra of an example device.
  • EP electro-phosphorescent
  • QDs quantum dots
  • Conventional methods employ one or the other to achieve either efficiency or color purity, but not both. While there has been extensive research in achieving both efficiency and color purity of OLED displays, people have been seeking other methods besides a combination of EP and QDs. Surprisingly and unexpectedly, it has been discovered by the present inventors that a combination of EP and QDs provides increased color purity of OLED displays while also increasing efficiency. Accordingly, some aspects of the invention provide a composition comprising an EP moiety and a QD, methods for using and producing the same, and electronic devices comprising such a composition.
  • Some aspects of the invention combine both EP and QDs and their advantages into a single structure that can be easily incorporated into an OLED.
  • the first method is to build an OLED structure comprising both a layer of QDs and EP materials.
  • the second method is to use a QD in conjunction with a ligand or capping group possessing the desired electro-phosphorescent characteristics.
  • an organic light emitting diode comprises: a substrate; an anode in physical contact with the substrate; a hole injection layer in electrical connection with the anode, a hole transport layer in electrical connection with the hole injection layer; a QD emission layer in electrical connection with the hole transport layer; an EP layer in electrical connection with the QD emission layer; a hole blocking layer in electrical connection with the EP layer; an electron transport layer in electrical connection with the hole blocking layer; an electron injection layer in electrical connection with the electron transport layer and a cathode in electrical connection with the electron injection layer.
  • an organic light emitting diode comprises: a substrate; an anode in physical contact with the substrate; a hole injection layer in electrical connection with the anode; a hole transport layer in electrical connection with the injection layer; an electro-phosphorescent quantum dot layer in electrical connection with the hole transport layer; a hole blocking layer in electrical connection with the electro-phosphorescent quantum dot layer; an electron transport layer in electrical connection with the hole blocking layer; a electron injection layer in electrical connection with the electron transport layer; and a cathode in electrical connection with the electron injection layer.
  • composition of the one or more emission modification layers and other layers of the device are selected based on the desired function of the device. Several different options are described below.
  • layer does not mean that a perfect layer of material is formed. Rather, as known in the art, certain defects such as pinholes or areas which do not have the material may be present, as long as the defects do not prevent the layer from having the desired characteristics. Also, “layer” may mean that in certain areas, there is more material thickness than in other areas. In specific embodiments, “layer” includes a partial layer up to multiple layers.
  • attach refers to a coupling or joining of two or more chemical or physical elements. In some instances, attach can refer to a coupling of two or more atoms based on an attractive interaction, such that these atoms can form a stable structure. Examples of attachment include chemical bonds such as chemisorptive bonds, covalent bonds, ionic bonds, van der Waals force, and hydrogen bonds.
  • the electro-phosphorescent (EP) quantum dot (QD) layer can comprise one or more electro-phosphorescent quantum dots in a host material.
  • electro-phosphorescent quantum dots refers to a composition comprising a material that comprises an EP moiety and a QD.
  • the composition of the electro-phosphorescent quantum dots can be a mixture of different EP and/or QDs, or can comprise one type of EP material and one type of QD.
  • the electro-phosphorescent quantum dot layer can also be one or more of the same or different electro-phosphorescent quantum dot compositions that are spin coated on the hole injection/transport layer or other layers in a semiconductor device.
  • the electro-phosphorescent QD comprises a QD (which can be optionally passivated by an organic group such as a thiophene-containing group or other passivating group known in the art); and a layer of electro-phosphorescent group(s) attached to or coated onto the QD.
  • the EP groups are spin coated or vapor deposited onto the QDs.
  • the invention generally relates to a composition comprising a quantum dot and a material that comprises an electro-phosphorescence moiety, methods for using and producing the same, and devices that comprises the same. That is, the invention generally relates to OLED compositions, methods for producing and using the same, and devices that comprise such compositions.
  • the description herein provides non-limiting illustrations of some embodiments and details of some embodiments of the invention.
  • FIG. 1 is a schematic illustration of one embodiment of the composition comprising quantum dot and a material that comprises an electro-phosphorescent moiety.
  • a coating material that comprises an electro-phosphorescent moiety is coated onto the quantum.
  • the coating material also comprises a linker that is used to non-covalently attach the electro-phosphorescent moiety to the quantum dot.
  • the linker is functionalized such that an electro-phosphorescent moiety can be attached to the linker.
  • the electro-phosphorescent moiety of the coating material is in close proximity to the host material such that efficient Förster transfer of singlets, Dexter transfer of triplets, or direct charging of either type of exciton, can be achieved.
  • the linker is short enough (e.g., less than 100 Angstroms) such that emissive singlet excitons can also be created on the QD by direct charging or possibly a Förster transfer from the host material or the EP moiety of the coating material.
  • Both the EP moiety and the QD can contribute to emission. At least two configurations of the EP moiety and the QD are possible: (1) the EP moiety and the QD have similar emission spectra, which gives rise to enhanced color saturation and efficiency, and (2) the EP moiety and the QD have dissimilar or different emission spectra.
  • compositions of the invention can also have one or more additional emissive layers such as 2,9-Dimethyl-4,7-diphenyl-1,10-phenanhroline (BCP), 2,2′,2′′-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) or other similar material, or a combination emissive/electron-transport layer, such as aluminum tris(8-hydroxyquinoline) (Alq3) or other known material, for a three- or more-component spectra.
  • compositions of the invention comprise a QD and a coating material that comprises a linker having one or more same or different EP moieties. When more than one coating materials are used, each coating material can be arranged in different layers or they can all be a mixture in one layer.
  • emission spectra means the wavelength of maximum emission intensity in two different spectra are within 50 nm of each other. As used herein, emission spectra which are not similar means the wavelength of maximum emission intensity in two different spectra are more than 50 nm from each other.
  • the combined spectra of the multiple emitters can also be used as an approach to producing white light.
  • a voltage-dependent spectrum is provided based on shifting the region of exciton formation and recombination. It is believed that at high current densities the device can be more susceptible to triplet-triplet annihilation effects, which has an effect on the dominant source or sources of emission within the device, as known in the art.
  • FIG. 2 is schematic illustrations of the some embodiments of the invention.
  • FIG. 2 shows exemplary device structures comprising the quantum dots coated with a material comprising an electro-phosphorescent moiety.
  • FIG. 2( a ) shows a structure in which the source of emission is the EP-QD.
  • the hole/exciton blocking layer serves to confine the emissive excitons to the region of the EP-QD emitter, and the electron transport layer facilitates efficient injection of electrons and the movement of these to the EP-QD emitters.
  • FIG. 2( b ) a structure comprising a hole/exciton blocking layer without an electron transport layer is shown.
  • the hole/exciton blocking layer is designed to confine excitons to the emissive region and transport electrons to the EP-QD emitters.
  • FIG. 2( c ) shows a structure that combines the EP-QD emitters with a second emissive layer and an electron transport layer. In this case, emission comes from the EP-QD and the emissive layer, which, in one embodiment, can combine to produce white light.
  • the electron transport layer can facilitate injection of electrons from the cathode and movement of the electrons to the emissive region.
  • FIG. 2( d ) a structure is shown that combines a second emissive layer with the EP-QDs, as well as a hole/exciton blocking layer.
  • the emission from the emissive layer combines with that from the EP-QD, which in one embodiment, can produce a white light spectra.
  • the hole/exciton blocking layer can confine the excitons to the region of the emissive layer and EP-QD emitters.
  • an emissive layer is used to combine with the emission from the EP-QD emitters.
  • the emissive layer can also act as a transport layer to carry the electrons to the emissive region.
  • FIG. 2( f ) shows a configuration that combines an emissive layer, a hole/exciton blocking layer and an electron transport layer. Light from the emissive layer combines with that from the EP-QDs layer to produce white light.
  • the hole/exciton blocking layer is used to confine excitons to the region of the emissive layer and EP-QD emitters.
  • the electron transport layer can facilitate injection of electrons into the device from the cathode and transport these electrons to the emissive layer and EP-QD emitters.
  • the substrate can be rigid or flexible.
  • a device can contain more than one layer that can be characterized as having the same technical function. For example, there can be more than one different layers in a device that function as an “emissive layer.” All such embodiments are intended to be included here.
  • the substrate can be any suitable material including, but not limited to, plastic, metal, quartz and glass.
  • the anode material can be any suitable material including, but not limited to, transparent indium tin oxide (ITO), gallium indium tin oxide, zinc indium tin oxide, titanium nitride, and polyaniline.
  • the cathode can be any suitable material including, but not limited to, Al, Ba, Yb, Ca, a lithium-aluminum alloy, a magnesium-silver alloy, and any alloy thereof.
  • the hole injection layer can be any suitable material including, but not limited to, copper phthalocyanine (CuPC), and a dispersion of poly(styrenesulfonate) in poly(3,4-ethylenedioxythiophene) (PEDOT:PSS).
  • a suitable material for hole transport layer includes, but not limited to, N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine (NPB) or poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine (poly-TPD).
  • NPB N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine
  • poly-TPD poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine
  • the host material for the electro-phosphorescent quantum dot can be any suitable materials known to one skilled in the art.
  • the material for emissive layer can be any suitable material known to one skilled in the art including, but not limited to, one or more of a small molecule electroluminescent material, a small molecule electro-phosphorescent material, a light emitting polymer, and a combination thereof.
  • the material for hole-excitation blocking layer can be any suitable material known to one skilled in the art including, but not limited to, BCP, 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ), and TPBi.
  • the material for electron transport layer can be any suitable material known to one skilled in the art including, but not limited to, aluminum, gallium, indium, zinc and magnesium complexes, such as Alq3, and other suitable materials such as TPBi, TAZ, BCP, and any conjugated polymer.
  • suitable materials such as TPBi, TAZ, BCP, and any conjugated polymer.
  • one or more materials comprising same or different EP moieties can be coated onto the same or different QDs and used in an OLED or other devices.
  • the QDs are well known to one skilled in the art and are described in a variety of literatures. Various size QDs are useful in this invention. Without undue experimentation, one of ordinary skill in the art can select a QD that will be useful in the invention based on a variety of factors including, but not limited to, the desired optical characteristics of the OLED.
  • the QD can be a core-shell structure, a QD-quantum well or a gradient QD, as known in the art.
  • Scheme 1 shows a synthesis of a linker that is capable of coordinating to both the QD surface and the transition metal ion of the EP moiety.
  • the linker in Scheme 1 comprises an ⁇ , ⁇ -dicarbonyl group, which coordinates with the EP moiety, and a thiophene group, which attaches to the QD, these are not the only useful functional groups.
  • Other functional groups which are capable of performing the desired functions can be used. Suitable functional groups for such purposes are well known to one skilled in the art.
  • any functional group capable of attaching to the QD can be used in the linker.
  • the linker can comprise a functional group that can attach to such a metal, e.g., sulfides, hydroxides, carboxylates, amines, etc.
  • the linker can be attach to the QD through a thiophene, phosphine, carboxyl, amine group, alcohol, thiol, alkene, alkyne, ether, thioether, phosphine, amide, carboxylate, sulfonate, phosphate, quaternary ammonium, silane, sulfide, and other suitable groups as known in the art.
  • the linker of a coating material is attached to the QD through a carbon, nitrogen, sulfur, phosphorus or oxygen atom.
  • the linker is shown as attaching to the QD and the EP group with “bi-dentate” ligands herein, the attachments can be mono-, bi-, tri-dentate, or other configurations known to one skilled in the art.
  • the material comprising an EP moiety can be an oligomer or other suitable material known to one skilled in the art.
  • the particular choice of the ⁇ , ⁇ -dicarbonyl ligand is influenced by its efficacy in SMP type compounds, such as the green dopant of the formula:
  • an EP-moiety to the linker e.g., compound 3 of Scheme 1
  • methods for incorporating an EP-moiety to the linker including: (1) attaching the linker to the surface of the QD followed by attaching an EP-moiety and (2) attaching an EP-moiety to the linker and then attaching the linker to the QD surface.
  • Some of the methods for attaching an EP-moiety to the linker are illustrated in Schemes 2 and 3. It should be appreciated that the scope of the present invention for attaching an EP-moiety to the linker is not limited to such methods and includes other methods known to one skilled in the art, for example, using other suitable function groups.
  • Schemes 4 and 5 are schematic representation of compounds 2 and 15, respectively, that are attached to quantum dots:
  • Schemes 6 and 7 below show alternative methods for producing the structures illustrated in Schemes 4 and 5, respectively. Briefly, in Schemes 6 and 7, the linker is bound to the quantum dot surface and then the electro-phosphorescence moiety is attached to the linker.
  • the EP moieties of Compounds 2 and 15, in combination with the selected QD provide green light.
  • linkers with the EP-moieties shown below can be used, respectively.
  • emitters there are various emitters to choose from, depending on the desired emission spectrum. These emitters are well known to one skilled in the art and can be incorporated herein without undue experimentation. It is also well known to one skilled in the art that various mixtures of green, red, blue or other color emitters can be used in a device to provide the desired emission.
  • the modified QDs can be spin coated on to the hole transport layer in the presence of a suitable host material, such as 4,4′-bis(cabazol-9-yl) biphenyl, which is typically with red and/or green emitters and 1,3-bis(carbozol-9-yl)benzene, which is typically used with blue emitters.
  • a suitable host material such as 4,4′-bis(cabazol-9-yl) biphenyl, which is typically with red and/or green emitters and 1,3-bis(carbozol-9-yl)benzene, which is typically used with blue emitters.
  • suitable host materials are well known to one skilled in the art and can be incorporated in the methods and devices described herein by one of ordinary skill in the art without undue experimentation.
  • polymeric materials such as, but not limited to, poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co(9,9-(5′-pentenyl)-fluorenyl-2,7-diyl), which is abbreviated as PF28-pentenyl, can also be used as host materials.
  • QDs can be incorporated into OLEDs using a variety of techniques, including spin coating, screen printing and inkjet printing. One can achieve a desired optical property by the thickness of the QD layer.
  • each of the components need to have compatible band structures, i.e., close alignment of the respective highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO). It is believed that such a configuration serves several purposes. For example, as the hole-transport layer (HTL)/emissive layer (EML) and electron-transport layer (ETL)/EML interface, close alignment of the respective HOMO and LUMO allows hole and electrons to be injected into the emissive layer without needing to surpass a significant energy barrier, and confines the charges to the emissive region without allowing the charges to escape to the opposite contact.
  • HTL hole-transport layer
  • EML electron-transport layer
  • ETL electron-transport layer
  • ETL electron-transport layer
  • ETL electron-transport layer
  • a series of properly aligned energy levels of the host material, electro-phosphorescence moiety, and QD provide an efficient pathway for charge injection, exciton formation, exciton transfer and radiative emission.
  • the inorganic QDs which in some embodiments form the basis of OLEDs, are believed to be predominately charged by direct injection. Therefore, a low barrier for hole and electron injection from the surrounding molecule, namely the host and EP, is desired. In one embodiment, this is achieved by using a host molecule having a large band-gap that provides low injection barriers.
  • a pathway for charge transfer from the QD to the triplet emitter is useful. This is typically achieved by using an EP moiety having an equal or slightly smaller gap relative to the QD. Even if the gap of the EP moiety is equal or larger than that of the QD, transfer of one type of carrier can still occur by way of a resonant transfer between aligned HOMO or LUMO. Significant transfer of both charges and excitons is believed to occur from the host to the EP moiety, which requires the guest EP moiety to have a smaller gap than the EP moiety for Förster transfer of singlet excitons and Dexter transfer of triplet excitons.
  • a multilayer OLED was fabricated using a combination of solution processing and chemical vapor deposition (CVD).
  • the structure of this stack was indium tin oxide (ITO), PEDOT:PSS (25.00 nm), poly-TPD (35.00 nm), QD (7.00 nm diameter, nominally three layers), IrPPy 3 (2.80 nm), TPBi (40.70 nm) Alq 3 (15.00 nm), LiF (1.50 nm) and a cathode comprising Al.
  • ITO-coated glass was cleaned thoroughly by sonication in a 2% Tergitol solution, followed by a rinsing in de-ionized water and immersion for 10 minutes in a 5:1:1 solution of DI water:ammonium hydroxide:hydrogen peroxide heated to 70° C. Substrates were then rinsed with deionized (DI) water and sonicated in acetone and methanol for 15 minutes each. After drying with nitrogen, they were cleaned with UV/ozone. Spin-coating of PEDOT:PSS, the poly-TPD and QD layers was performed in a nitrogen-filled glove box. A 3:5 solution (0.3 mL) of Baytron P in methanol was cast onto the ITO substrate.
  • the substrate was accelerated to 3000 rpm for 1 second, then to 6000 rpm and held at that rate for 30 seconds.
  • the film was annealed on a hotplate inside the glove box at 125° C. for 10 minutes. After annealing, the substrate was placed on the spin-coater, and a 10 mg/mL solution (0.1 mL) of poly-TPD in toluene was dropped onto the substrate surface. The substrate was accelerated to 3000 rpm and held at this rate for 60 seconds. The resultant film was annealed at 60° C. for 30 minutes. A solution of 3 mg/mL of QDs in octane was cast onto the surface of the substrate.
  • the substrate was spun at 4000 rpm for one minute. Any suitable QD including, but not limited to, those described in US Patent Publication Number 2007/0111324, which is incorporated herein by reference in its entirety, can be used.
  • the substrate with the PEDOT:PSS/poly-TPD/QD tri-layer was moved in an inert atmosphere to a vacuum chamber.
  • a 2.8 nm film of Ir(ppy) 3 was deposited onto the substrate by thermal evaporation at a rate of about 0.1 ⁇ s ⁇ 1 , followed by a 40.70 nm thick layer of TPBi and a 15 nm thick layer of Alq 3 , deposited at a rate of about 5.0 ⁇ s ⁇ 1 .
  • Film deposition was carried out at a base pressure of 2 ⁇ 10 ⁇ 6 mbar.
  • the chamber was vented and a shadow masked for depositing patterned cathodes was placed over the device.
  • the device was placed back into the chamber and pumped to a base pressure of 2 ⁇ 10 ⁇ 6 mbar.
  • a bi-layer of lithium fluoride and aluminum was deposited using thermal evaporation at a rate of about 0.1 ⁇ s ⁇ 1 for LiF and about 5-25 ⁇ s ⁇ 1 for Al. Finished devices were removed from the chamber and characterized under an inert atmosphere. See FIGS. 3-6 for various characteristics of the device.

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Cited By (14)

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US20100117060A1 (en) * 2008-11-12 2010-05-13 Academia Sinica Quantum dot infrared photodetector apparatus
US20100176389A1 (en) * 2009-01-13 2010-07-15 Samsung Mobile Display Co., Ltd. Organic light emitting diode and method of manufacturing the same
US20130026415A1 (en) * 2010-04-12 2013-01-31 Merck Patent Gmbh Composition having improved performance
US20130063023A1 (en) * 2010-05-27 2013-03-14 Merck Patent Gmbh Compositions comprising quantum dots
US20140374699A1 (en) * 2013-06-20 2014-12-25 Seoul National University R&Db Foundation Single photon device, apparatus for emitting and transferring single photon, and methods of manufacturing and operating the same
US9379344B2 (en) * 2013-12-27 2016-06-28 Boe Technology Group Co., Ltd. Display panel and display device
US20160307977A1 (en) * 2015-01-21 2016-10-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Oled color display device
JP2017038049A (ja) * 2015-08-07 2017-02-16 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、表示装置及び照明装置
US9583726B2 (en) * 2014-04-14 2017-02-28 Boe Technology Group Co., Ltd. Light-emitting diode and electronic device
US9806275B2 (en) 2014-11-17 2017-10-31 Samsung Display Co., Ltd. Organic light emitting diode display
US10050220B2 (en) * 2016-01-25 2018-08-14 Shenzhen China Star Optoelectronics Technology Co., Ltd Quantum dot light emitting element including water/alcohol soluble conjugated polymer based electron injection/electron transporting layer, manufacturing method thereof and liquid crystal display device
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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273775A (en) * 1990-09-12 1993-12-28 Air Products And Chemicals, Inc. Process for selectively depositing copper aluminum alloy onto a substrate
US20030042850A1 (en) * 2001-09-04 2003-03-06 Dietrich Bertram Electroluminescent device comprising quantum dots
US20050147843A1 (en) * 2002-03-26 2005-07-07 Sumitomo Chemical Company, Limited Metal complex and organic letroluminescent devices
US20050277295A1 (en) * 2004-06-09 2005-12-15 Thomas Hecht Coating process for patterned substrate surfaces
US20060270081A1 (en) * 2005-05-27 2006-11-30 Chua Janet B Y Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device
US20070004080A1 (en) * 2005-06-30 2007-01-04 Ouyang Mike X Hermetic seals for micro-electromechanical system devices
US20070077594A1 (en) * 2003-12-02 2007-04-05 Koninklijke Philips Electronics Electroluminescent device
US20070085092A1 (en) * 2005-10-14 2007-04-19 Hon Hai Precision Industry Co., Ltd. Light-emitting device, planar light source and direct type backlight module
US20070164376A1 (en) * 1999-10-25 2007-07-19 Burrows Paul E Method for edge sealing barrier films
US20070190362A1 (en) * 2005-09-08 2007-08-16 Weidman Timothy W Patterned electroless metallization processes for large area electronics
US7265003B2 (en) * 2004-10-22 2007-09-04 Hewlett-Packard Development Company, L.P. Method of forming a transistor having a dual layer dielectric

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060102379A (ko) * 2005-03-23 2006-09-27 삼성전자주식회사 디스플레이 장치

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273775A (en) * 1990-09-12 1993-12-28 Air Products And Chemicals, Inc. Process for selectively depositing copper aluminum alloy onto a substrate
US20070164376A1 (en) * 1999-10-25 2007-07-19 Burrows Paul E Method for edge sealing barrier films
US20030042850A1 (en) * 2001-09-04 2003-03-06 Dietrich Bertram Electroluminescent device comprising quantum dots
US20050147843A1 (en) * 2002-03-26 2005-07-07 Sumitomo Chemical Company, Limited Metal complex and organic letroluminescent devices
US20070077594A1 (en) * 2003-12-02 2007-04-05 Koninklijke Philips Electronics Electroluminescent device
US20050277295A1 (en) * 2004-06-09 2005-12-15 Thomas Hecht Coating process for patterned substrate surfaces
US7265003B2 (en) * 2004-10-22 2007-09-04 Hewlett-Packard Development Company, L.P. Method of forming a transistor having a dual layer dielectric
US20060270081A1 (en) * 2005-05-27 2006-11-30 Chua Janet B Y Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device
US20070004080A1 (en) * 2005-06-30 2007-01-04 Ouyang Mike X Hermetic seals for micro-electromechanical system devices
US20070190362A1 (en) * 2005-09-08 2007-08-16 Weidman Timothy W Patterned electroless metallization processes for large area electronics
US20070085092A1 (en) * 2005-10-14 2007-04-19 Hon Hai Precision Industry Co., Ltd. Light-emitting device, planar light source and direct type backlight module

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100117060A1 (en) * 2008-11-12 2010-05-13 Academia Sinica Quantum dot infrared photodetector apparatus
US7977666B2 (en) * 2008-11-12 2011-07-12 Academia Sinica Quantum dot infrared photodetector apparatus
US20100176389A1 (en) * 2009-01-13 2010-07-15 Samsung Mobile Display Co., Ltd. Organic light emitting diode and method of manufacturing the same
US8664016B2 (en) * 2009-01-13 2014-03-04 Samsung Display Co., Ltd. Organic light emitting diode and method of manufacturing the same
US9196857B2 (en) * 2009-01-13 2015-11-24 Samsung Display Co., Ltd. Organic light emitting diode and method of manufacturing the same
US20130026415A1 (en) * 2010-04-12 2013-01-31 Merck Patent Gmbh Composition having improved performance
US9379323B2 (en) * 2010-04-12 2016-06-28 Merck Patent Gmbh Composition having improved performance
US20130063023A1 (en) * 2010-05-27 2013-03-14 Merck Patent Gmbh Compositions comprising quantum dots
US10190043B2 (en) * 2010-05-27 2019-01-29 Merck Patent Gmbh Compositions comprising quantum dots
US20140374699A1 (en) * 2013-06-20 2014-12-25 Seoul National University R&Db Foundation Single photon device, apparatus for emitting and transferring single photon, and methods of manufacturing and operating the same
US9595569B2 (en) * 2013-06-20 2017-03-14 Samsung Electronics Co., Ltd. Single photon device, apparatus for emitting and transferring single photon, and methods of manufacturing and operating the same
US9379344B2 (en) * 2013-12-27 2016-06-28 Boe Technology Group Co., Ltd. Display panel and display device
US9583726B2 (en) * 2014-04-14 2017-02-28 Boe Technology Group Co., Ltd. Light-emitting diode and electronic device
US9806275B2 (en) 2014-11-17 2017-10-31 Samsung Display Co., Ltd. Organic light emitting diode display
US20160307977A1 (en) * 2015-01-21 2016-10-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Oled color display device
US10038042B2 (en) * 2015-01-21 2018-07-31 Shenzhen China Star Optoelectronics Technology Co., Ltd. OLED color display device
JP2017038049A (ja) * 2015-08-07 2017-02-16 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、表示装置及び照明装置
US10050220B2 (en) * 2016-01-25 2018-08-14 Shenzhen China Star Optoelectronics Technology Co., Ltd Quantum dot light emitting element including water/alcohol soluble conjugated polymer based electron injection/electron transporting layer, manufacturing method thereof and liquid crystal display device
US10115921B2 (en) * 2016-01-25 2018-10-30 Shenzhen China Star Optoelectronics Technology Co., Ltd Quantum dot light emitting element, method of fabricating the same, and liquid-crystal display
WO2019197809A1 (en) * 2018-04-11 2019-10-17 Nanoco Technologies Ltd Quantum dot architectures for fluorescence donor-assisted oled devices
CN112236498A (zh) * 2018-04-11 2021-01-15 纳米技术有限公司 用于荧光供体辅助oled装置的量子点构造
CN110896111A (zh) * 2018-09-13 2020-03-20 中国科学院大连化学物理研究所 一种基于量子点-磷光有机分子杂化材料的太阳能聚光板

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