US20100186809A1 - Nanowire- based solar cell structure - Google Patents

Nanowire- based solar cell structure Download PDF

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Publication number
US20100186809A1
US20100186809A1 US12/452,175 US45217508A US2010186809A1 US 20100186809 A1 US20100186809 A1 US 20100186809A1 US 45217508 A US45217508 A US 45217508A US 2010186809 A1 US2010186809 A1 US 2010186809A1
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Prior art keywords
solar cell
cell structure
nanowire
light
structure according
Prior art date
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Abandoned
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US12/452,175
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English (en)
Inventor
Lars Samuelson
Martin Magnusson
Federico Capasso
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QuNano AB
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QuNano AB
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Publication date
Priority claimed from SE0701513A external-priority patent/SE0701513L/xx
Priority claimed from SE0702072A external-priority patent/SE533522C2/sv
Application filed by QuNano AB filed Critical QuNano AB
Assigned to QUNANO AB reassignment QUNANO AB ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MAGNUSSON, MARTIN, SAMUELSON, LARS, CAPASSO, FEDERICO
Publication of US20100186809A1 publication Critical patent/US20100186809A1/en
Abandoned legal-status Critical Current

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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0096—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the lights guides being of the hollow type
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    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
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    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
US12/452,175 2007-06-19 2008-06-19 Nanowire- based solar cell structure Abandoned US20100186809A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
SE0701513A SE0701513L (sv) 2007-06-19 2007-06-19 Nanotrådsbaserad solcellsstruktur
SE0701513-4 2007-06-19
SE0702072-0 2007-09-13
SE0702072A SE533522C2 (sv) 2007-09-13 2007-09-13 Nanotrådsbaserad effektivmediumsolcell
PCT/SE2008/050734 WO2008156421A2 (fr) 2007-06-19 2008-06-19 Structure de cellule solaire à nanofil

Related Parent Applications (1)

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PCT/SE2008/050734 A-371-Of-International WO2008156421A2 (fr) 2007-06-19 2008-06-19 Structure de cellule solaire à nanofil

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US15/374,217 Division US10128394B2 (en) 2007-06-19 2016-12-09 Nanowire-based solar cell structure

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US20100186809A1 true US20100186809A1 (en) 2010-07-29

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US12/452,175 Abandoned US20100186809A1 (en) 2007-06-19 2008-06-19 Nanowire- based solar cell structure
US15/374,217 Expired - Fee Related US10128394B2 (en) 2007-06-19 2016-12-09 Nanowire-based solar cell structure

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US15/374,217 Expired - Fee Related US10128394B2 (en) 2007-06-19 2016-12-09 Nanowire-based solar cell structure

Country Status (6)

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US (2) US20100186809A1 (fr)
EP (1) EP2168167B1 (fr)
KR (1) KR101547711B1 (fr)
CN (2) CN101803035B (fr)
AU (1) AU2008264257A1 (fr)
WO (1) WO2008156421A2 (fr)

Cited By (34)

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Publication number Priority date Publication date Assignee Title
US20110079704A1 (en) * 2009-10-07 2011-04-07 Zena Technologies, Inc. Nano wire based passive pixel image sensor
JP2011135058A (ja) * 2009-11-30 2011-07-07 Honda Motor Co Ltd 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法
US20110309331A1 (en) * 2010-06-22 2011-12-22 Zena Technologies, Inc. Solar blind ultra violet (uv) detector and fabrication methods of the same
WO2013126432A1 (fr) * 2012-02-21 2013-08-29 California Institute Of Technology Réseaux de fils tandem à croissance épitaxiale intégrés axialement
WO2013184065A1 (fr) 2012-06-07 2013-12-12 Qunano Ab Procédé de fabrication d'une structure conçue pour être transférée vers une couche non cristalline et structure fabriquée à l'aide dudit procédé
US8710488B2 (en) 2009-12-08 2014-04-29 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8766272B2 (en) 2009-12-08 2014-07-01 Zena Technologies, Inc. Active pixel sensor with nanowire structured photodetectors
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8810808B2 (en) 2009-05-26 2014-08-19 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US20140283901A1 (en) * 2011-07-29 2014-09-25 Gasp Solar Aps Nanostructure, nanostructure fabrication method, and photovoltaic cell incorporating a nanostructure
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
WO2015004235A1 (fr) * 2013-07-12 2015-01-15 Commissariat à l'énergie atomique et aux énergies alternatives Photodetecteur semi-transparent a jonction p-n structuree
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US9177985B2 (en) 2009-06-04 2015-11-03 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US9304035B2 (en) 2008-09-04 2016-04-05 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US9429723B2 (en) 2008-09-04 2016-08-30 Zena Technologies, Inc. Optical waveguides in image sensors
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US20160336411A1 (en) * 2012-12-21 2016-11-17 Sol Voltaics Ab Recessed contact to semiconductor nanowires
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US9529126B2 (en) * 2014-01-09 2016-12-27 Wisconsin Alumni Research Foundation Fresnel zone plate
EP3216061A1 (fr) * 2014-11-07 2017-09-13 Sol Voltaics AB Alignement vertical activé par coque et ensemble de précision d'un film de cristaux colloïdaux compact
US10128394B2 (en) 2007-06-19 2018-11-13 Qunano Ab Nanowire-based solar cell structure
JP2020021776A (ja) * 2018-07-30 2020-02-06 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法、発電装置及び電源装置
US10804418B2 (en) 2019-01-17 2020-10-13 United Microelectronics Corp. Photodetector and method for fabricating the same
US20220165895A1 (en) * 2020-11-23 2022-05-26 United Microelectronics Corp. Image sensor and manufacturing method thereof
US20220336519A1 (en) * 2021-04-16 2022-10-20 United Microelectronics Corp. Image sensor structure and manufacturing method thereof

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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WO2010120233A2 (fr) * 2009-04-15 2010-10-21 Sol Voltaics Ab Cellule photovoltaïque multi-jonction avec nanofils
US8211735B2 (en) 2009-06-08 2012-07-03 International Business Machines Corporation Nano/microwire solar cell fabricated by nano/microsphere lithography
WO2011049529A1 (fr) * 2009-10-22 2011-04-28 Sol Voltaics Ab Diode à effet tunnel à nanocâble et procédé de fabrication de celle-ci
US8390705B2 (en) 2009-10-27 2013-03-05 Hewlett-Packard Develoment Company, L.P. Nanowire photodiodes
US8659037B2 (en) 2010-06-08 2014-02-25 Sundiode Inc. Nanostructure optoelectronic device with independently controllable junctions
US8431817B2 (en) * 2010-06-08 2013-04-30 Sundiode Inc. Multi-junction solar cell having sidewall bi-layer electrical interconnect
US8476637B2 (en) 2010-06-08 2013-07-02 Sundiode Inc. Nanostructure optoelectronic device having sidewall electrical contact
CN104603952B (zh) * 2012-07-06 2017-07-21 昆南诺股份有限公司 径向纳米线江崎二极管装置和方法
JP6036833B2 (ja) * 2012-09-18 2016-11-30 富士通株式会社 太陽電池及びその製造方法
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JP6214037B2 (ja) * 2013-10-03 2017-10-18 シャープ株式会社 光検知素子
EP3260414A1 (fr) 2016-06-21 2017-12-27 Sol Voltaics AB Procédé permettant de transférer des nanofils d'un fluide sur une surface de substrat
CN111180554B (zh) * 2020-01-08 2023-01-03 燕山大学 一种混合结构太阳能电池的制备方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020172820A1 (en) * 2001-03-30 2002-11-21 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US20040095658A1 (en) * 2002-09-05 2004-05-20 Nanosys, Inc. Nanocomposites
US20040115858A1 (en) * 2002-12-11 2004-06-17 Spivack James L Dye sensitized solar cells having foil electrodes
US20040144416A1 (en) * 2002-12-31 2004-07-29 Chih-Kuang Wang Visible light-induced photocatalyst
US20050009224A1 (en) * 2003-06-20 2005-01-13 The Regents Of The University Of California Nanowire array and nanowire solar cells and methods for forming the same
US20050253164A1 (en) * 2004-05-17 2005-11-17 Rajaram Bhat Tunnel junctions for long-wavelength vcsels
US20060207647A1 (en) * 2005-03-16 2006-09-21 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
US20070137697A1 (en) * 2005-08-24 2007-06-21 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanoscale cometal structures
US20070204901A1 (en) * 2005-11-06 2007-09-06 Banpil Photonics, Inc. Photovoltaic cells based on nano or micro-scale structures
US20080156366A1 (en) * 2006-12-29 2008-07-03 Sundiode, Inc. Solar cell having active region with nanostructures having energy wells
US7402531B1 (en) * 2005-12-09 2008-07-22 Hewlett-Packard Development Company, L.P. Method for selectively controlling lengths of nanowires
US20090266411A1 (en) * 2005-06-17 2009-10-29 Illuminex Corporation Photovoltaic wire

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234352A (en) 1978-07-26 1980-11-18 Electric Power Research Institute, Inc. Thermophotovoltaic converter and cell for use therein
ES2238290T3 (es) 1999-06-04 2005-09-01 Sdgi Holdings, Inc. Implante de disco artificial.
US6947161B2 (en) 2001-05-16 2005-09-20 Hewlett-Packard Development Company, L.P. Systems and methods for automatic status tracking of automatically ordered replaceable components for printing devices
US6946597B2 (en) * 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US6969897B2 (en) * 2002-12-10 2005-11-29 Kim Ii John Optoelectronic devices employing fibers for light collection and emission
KR101410709B1 (ko) * 2003-07-07 2014-06-25 다우 코닝 코포레이션 태양 전지의 캡슐화 방법
KR101001547B1 (ko) * 2004-01-28 2010-12-17 삼성에스디아이 주식회사 섬유상 태양 전지 및 이의 제조 방법
US20060021647A1 (en) * 2004-07-28 2006-02-02 Gui John Y Molecular photovoltaics, method of manufacture and articles derived therefrom
US8030385B2 (en) 2006-03-07 2011-10-04 Acushnet Company Golf ball compositions
WO2007102781A1 (fr) 2006-03-08 2007-09-13 Qunano Ab Procédé de synthèse non métallique de nanocircuits semi-conducteurs épitaxiques sur du si
EP1892769A2 (fr) * 2006-08-25 2008-02-27 General Electric Company Dispositifs photovoltaïques à nanofils à jonction conforme unique
US20080135089A1 (en) * 2006-11-15 2008-06-12 General Electric Company Graded hybrid amorphous silicon nanowire solar cells
US8003883B2 (en) 2007-01-11 2011-08-23 General Electric Company Nanowall solar cells and optoelectronic devices
US7977568B2 (en) 2007-01-11 2011-07-12 General Electric Company Multilayered film-nanowire composite, bifacial, and tandem solar cells
US20080178931A1 (en) * 2007-01-26 2008-07-31 Hye-Won Seo Multi-junction solar cell
CN101803035B (zh) 2007-06-19 2016-08-24 昆南诺股份有限公司 基于纳米线的太阳能电池结构
US8491718B2 (en) 2008-05-28 2013-07-23 Karin Chaudhari Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
US20100154861A1 (en) 2008-12-23 2010-06-24 Formfactor, Inc. Printed solar panel
WO2010120233A2 (fr) 2009-04-15 2010-10-21 Sol Voltaics Ab Cellule photovoltaïque multi-jonction avec nanofils

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080092938A1 (en) * 2001-03-30 2008-04-24 Arun Majumdar Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US20020172820A1 (en) * 2001-03-30 2002-11-21 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US20040095658A1 (en) * 2002-09-05 2004-05-20 Nanosys, Inc. Nanocomposites
US20040115858A1 (en) * 2002-12-11 2004-06-17 Spivack James L Dye sensitized solar cells having foil electrodes
US20040144416A1 (en) * 2002-12-31 2004-07-29 Chih-Kuang Wang Visible light-induced photocatalyst
US20050009224A1 (en) * 2003-06-20 2005-01-13 The Regents Of The University Of California Nanowire array and nanowire solar cells and methods for forming the same
US20050253164A1 (en) * 2004-05-17 2005-11-17 Rajaram Bhat Tunnel junctions for long-wavelength vcsels
US20060207647A1 (en) * 2005-03-16 2006-09-21 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
US20090266411A1 (en) * 2005-06-17 2009-10-29 Illuminex Corporation Photovoltaic wire
US20070137697A1 (en) * 2005-08-24 2007-06-21 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanoscale cometal structures
US20070204901A1 (en) * 2005-11-06 2007-09-06 Banpil Photonics, Inc. Photovoltaic cells based on nano or micro-scale structures
US7402531B1 (en) * 2005-12-09 2008-07-22 Hewlett-Packard Development Company, L.P. Method for selectively controlling lengths of nanowires
US20080156366A1 (en) * 2006-12-29 2008-07-03 Sundiode, Inc. Solar cell having active region with nanostructures having energy wells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Szmidt et al., DLC PASSIVATION LAYUERS FOR HIGH VOLTAGE SILICON DEVICES, Electrotechnical Conference, melecon 98, 9th Mediterranean, vol. 1, pages 345-348 (1998). *

Cited By (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10128394B2 (en) 2007-06-19 2018-11-13 Qunano Ab Nanowire-based solar cell structure
US9410843B2 (en) 2008-09-04 2016-08-09 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires and substrate
US9337220B2 (en) 2008-09-04 2016-05-10 Zena Technologies, Inc. Solar blind ultra violet (UV) detector and fabrication methods of the same
US9304035B2 (en) 2008-09-04 2016-04-05 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US9429723B2 (en) 2008-09-04 2016-08-30 Zena Technologies, Inc. Optical waveguides in image sensors
US9601529B2 (en) 2008-09-04 2017-03-21 Zena Technologies, Inc. Light absorption and filtering properties of vertically oriented semiconductor nano wires
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8810808B2 (en) 2009-05-26 2014-08-19 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US9177985B2 (en) 2009-06-04 2015-11-03 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US20110079704A1 (en) * 2009-10-07 2011-04-07 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US8384007B2 (en) * 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US9490283B2 (en) 2009-11-19 2016-11-08 Zena Technologies, Inc. Active pixel sensor with nanowire structured photodetectors
JP2011135058A (ja) * 2009-11-30 2011-07-07 Honda Motor Co Ltd 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法
US8710488B2 (en) 2009-12-08 2014-04-29 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US8766272B2 (en) 2009-12-08 2014-07-01 Zena Technologies, Inc. Active pixel sensor with nanowire structured photodetectors
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US9263613B2 (en) 2009-12-08 2016-02-16 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8754359B2 (en) 2009-12-08 2014-06-17 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US9123841B2 (en) 2009-12-08 2015-09-01 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8835905B2 (en) * 2010-06-22 2014-09-16 Zena Technologies, Inc. Solar blind ultra violet (UV) detector and fabrication methods of the same
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US20110309331A1 (en) * 2010-06-22 2011-12-22 Zena Technologies, Inc. Solar blind ultra violet (uv) detector and fabrication methods of the same
US9054008B2 (en) 2010-06-22 2015-06-09 Zena Technologies, Inc. Solar blind ultra violet (UV) detector and fabrication methods of the same
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US9543458B2 (en) 2010-12-14 2017-01-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet Si nanowires for image sensors
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US20140283901A1 (en) * 2011-07-29 2014-09-25 Gasp Solar Aps Nanostructure, nanostructure fabrication method, and photovoltaic cell incorporating a nanostructure
US11349039B2 (en) 2012-02-21 2022-05-31 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
WO2013126432A1 (fr) * 2012-02-21 2013-08-29 California Institute Of Technology Réseaux de fils tandem à croissance épitaxiale intégrés axialement
US10090425B2 (en) 2012-02-21 2018-10-02 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
WO2013184065A1 (fr) 2012-06-07 2013-12-12 Qunano Ab Procédé de fabrication d'une structure conçue pour être transférée vers une couche non cristalline et structure fabriquée à l'aide dudit procédé
US20160336411A1 (en) * 2012-12-21 2016-11-17 Sol Voltaics Ab Recessed contact to semiconductor nanowires
US9818830B2 (en) * 2012-12-21 2017-11-14 Sol Voltaics Ab Recessed contact to semiconductor nanowires
WO2015004235A1 (fr) * 2013-07-12 2015-01-15 Commissariat à l'énergie atomique et aux énergies alternatives Photodetecteur semi-transparent a jonction p-n structuree
FR3008546A1 (fr) * 2013-07-12 2015-01-16 Commissariat Energie Atomique Photodetecteur semi-transparent a jonction p-n structuree
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US9529126B2 (en) * 2014-01-09 2016-12-27 Wisconsin Alumni Research Foundation Fresnel zone plate
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
EP3216061A1 (fr) * 2014-11-07 2017-09-13 Sol Voltaics AB Alignement vertical activé par coque et ensemble de précision d'un film de cristaux colloïdaux compact
EP3216061B1 (fr) * 2014-11-07 2022-06-15 AlignedBio AB Alignement vertical activé par coque et ensemble de précision d'un film de cristaux colloïdaux compact
JP2020021776A (ja) * 2018-07-30 2020-02-06 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法、発電装置及び電源装置
JP7103027B2 (ja) 2018-07-30 2022-07-20 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法、発電装置及び電源装置
US10804418B2 (en) 2019-01-17 2020-10-13 United Microelectronics Corp. Photodetector and method for fabricating the same
US20220165895A1 (en) * 2020-11-23 2022-05-26 United Microelectronics Corp. Image sensor and manufacturing method thereof
US11641000B2 (en) * 2020-11-23 2023-05-02 United Microelectronics Corp. Image sensor and manufacturing method thereof
US20220336519A1 (en) * 2021-04-16 2022-10-20 United Microelectronics Corp. Image sensor structure and manufacturing method thereof

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US10128394B2 (en) 2018-11-13
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AU2008264257A1 (en) 2008-12-24
EP2168167A2 (fr) 2010-03-31
CN101803035A (zh) 2010-08-11
CN106206780B (zh) 2017-12-05
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US20170155008A1 (en) 2017-06-01
WO2008156421A3 (fr) 2009-02-26

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