US9529126B2 - Fresnel zone plate - Google Patents
Fresnel zone plate Download PDFInfo
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- US9529126B2 US9529126B2 US14/151,087 US201414151087A US9529126B2 US 9529126 B2 US9529126 B2 US 9529126B2 US 201414151087 A US201414151087 A US 201414151087A US 9529126 B2 US9529126 B2 US 9529126B2
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- zone plate
- fresnel zone
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1828—Diffraction gratings having means for producing variable diffraction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1876—Diffractive Fresnel lenses; Zone plates; Kinoforms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B2005/1804—Transmission gratings
Definitions
- This invention relates generally to microlenses, and in particular, to a Fresnel zone plate with an adjustable focal length which may be easily integrated with electronic circuits.
- a Fresnel lens or zone plate is a type of compact lens divided into a set of concentric annular sections. In each section, the overall thickness is decreased to effectively divide the continuous surface of a standard lens into a set of surfaces of the same curvature, with stepwise discontinuities between them. This arrangement allows for the construction of lenses without the mass and volumes of material that would be required by lenses of conventional design.
- Fresnel zone plates with their flat surfaces and small volumes are attractive for focusing, collimating and bending light in miniaturized optical systems and integrated optics.
- Fresnel zone plates typically use diffraction of the incident light instead of the refraction or reflection thereof.
- a Fresnel zone plate includes a set of radially symmetric rings, known as Fresnel zones, which alternate between opaque and transparent. Incident light encountering the Fresnel zone plate will diffract around the opaque zones. The opaque zones are spaced such that the diffracted light constructively interferes at a desired focus spot, thereby creating an image.
- conventional Fresnel zone plates do have certain problems associated therewith. For example, the focal length of a conventional Fresnel zone plate is fixed. It can be appreciated that modifying the convention Fresnel zone plate to have an adjustable focal length would be highly desirable.
- a reflective Fresnel zone plate incorporating carbon nanotube forests was proposed.
- carbon nanotube forests exhibit near-perfect optical absorption due to low reflectance and nanoscale surface roughness.
- the opaque Fresnel zones of the Fresnel zone plate may be defined by dark nanotube forests which effectively prevent light reflection from the opaque region. This arrangement allows for the Fresnel zone plate to exhibit a high contrast focusing of light as a result of the near-perfect optical absorption of the carbon nanotubes, thereby providing efficient focusing performance at optical wavelengths.
- the reflective Fresnel lens may be used for efficiently focusing and collimating light in optical data transfer and communication systems.
- two-dimensional source arrays for neural network architectures can be realized using reflective Fresnel lens arrays.
- reflective Fresnel zone plates requires chemical vapor deposition of the carbon at extremely, high temperatures, e.g. 540° C., integration of the reflective Fresnel zone plates with silicon-based electronic circuits is difficult.
- It is a still further object and feature of the present invention is to provide a Fresnel zone plate which may be simply and easily integrated with electronic circuits.
- a Fresnel zone plate for encountering incident light having a wavelength.
- the Fresnel zone plate includes a first set of rings radially spaced about a central axis.
- the first set of rings is transparent.
- a second set of rings is also radially spaced about the central axis.
- Each ring of the second set of rings includes a surface lying in a plane perpendicular to the central axis and is opaque.
- a plurality of silicon nanowires extend into at least one of the surfaces of the second set of rings.
- Each of the plurality of silicon nanowires is spaced from an adjacent one of the plurality of silicon nanowires by a distance. The distance is less than the wavelength of the incident light.
- a mounting surface is spaced from and generally parallel to the surfaces of the second set of rings and a tuning structure is mounted to the mounting surface.
- the tuning structure includes a plate wherein mechanically stretching of the plate adjusts a focal length of the Fresnel zone plate.
- the plate is fabricated from an elastomer and is transparent.
- the plurality of silicon nanowires have lengths. The lengths of the plurality of silicon nanowires are in the range of 1 micrometer to 6 micrometers.
- a Fresnel zone plate for encountering incident light having a wavelength.
- the Fresnel zone plate has a focal length and includes a wafer having alternating transparent and opaque zones, and a mounting surface.
- a tuning structure mounted to the mounting surface such that actuation of the tuning structure adjusts the focal length.
- the mounting surface is on a first side of the wafer and the second side of the wafer includes first and second sets of rings.
- the first set of rings is radially spaced about a central axis.
- the first set of rings is transparent.
- the second set of rings is radially spaced about the central axis.
- Each ring of the second set of rings includes a surface lying in a plane perpendicular to the central axis and is opaque.
- a plurality of silicon nanowires extend into at least one of the surfaces of the second set of rings.
- Each of the plurality of silicon nanowires is spaced from an adjacent one of the plurality of silicon nanowires by a distance. The distance is less than the wavelength of the incident light.
- the plurality of silicon nanowires have lengths.
- the lengths of the plurality of silicon nanowires are in the range of 1 micrometer to 6 micrometers.
- the tuning structure is actuated by mechanical stretching and includes a plate.
- the plate is fabricated from an
- a Fresnel zone plate for encountering incident light having a wavelength.
- the Fresnel zone plate has a focal length and a wafer including alternating transparent and opaque zones, and a mounting surface.
- a plurality of silicon nanowires extend into opaque zone of the wafer.
- a mechanically stretchable tuning structure is mounted to the mounting surface such that stretching of the tuning structure, varies the focal length of the Fresnel zone plate.
- the mounting surface is on a first side of the wafer and the second side of the wafer includes first and second sets of rings.
- the first set of rings is radially spaced about a central axis.
- the first set of rings is transparent.
- the second set of rings is radially spaced about the central axis.
- Each ring of the second set of rings includes a surface lying in a plane perpendicular to the central axis and is opaque.
- Each of the plurality of silicon nanowires is spaced from an adjacent one of the plurality of silicon nanowires by a distance. The distance is less than the wavelength of the incident light.
- the plurality of silicon nanowires have lengths. The lengths of the plurality of silicon nanowires are in the range of 1 micrometer to 6 micrometers.
- the tuning structure includes a plate that is fabricated from an elastomer and is transparent.
- FIG. 1 a is a schematic view of a first step in the fabrication of a Fresnel zone plate in accordance with the present invention
- FIG. 1 b is a schematic view of a second step in the fabrication of a Fresnel zone plate in accordance with the present invention
- FIG. 1 c is a schematic view of a third step in the fabrication of a Fresnel zone plate in accordance with the present invention.
- FIG. 1 d is a schematic view of a fourth step in the fabrication of a Fresnel zone plate in accordance with the present invention.
- FIG. 1 e is a schematic view of a fifth step in the fabrication of a Fresnel zone plate in accordance with the present invention.
- FIG. 1 f is a schematic view of a sixth step in the fabrication of a Fresnel zone plate in accordance with the present invention.
- FIG. 1 g is a schematic view of a seventh step in the fabrication of a Fresnel zone plate in accordance with the present invention.
- FIG. 1 h is a schematic view of an eighth step in the fabrication of a Fresnel zone plate in accordance with the present invention.
- FIG. 2 is a schematic, isometric view of a Fresnel zone plate in accordance with the present invention
- FIG. 3 a is a schematic, side elevational view of the Fresnel zone plate of FIG. 2 in a first configuration having a first focal length;
- FIG. 3 b is a schematic, side elevational view of the Fresnel zone plate of FIG. 2 in a second configuration having a second focal length;
- FIG. 4 is a schematic, isometric view of an alternate embodiment of the present invention including first and second Fresnel zone plates.
- a reflective Fresnel lens or zone plate is generally designated by the reference numeral 10 .
- a Fresnel zone plate includes alternating opaque and transparent zones which renders a focused light spot by the constructive interference of light reflected from the transparent zones.
- FIGS. 1 a -1 h schematically depicts the methodology for fabricating zone plate 10 in accordance with the present invention. More specifically, referring to FIG. 1 a , device layer 12 is provided.
- Device layer 12 may take the form of a silicon on insulator (SOI) wafer (N-type) with a resistivity of 1-10 ohm-cm or a p-type silicon wafer with a resistivity of 1-100 ohm-cm.
- SOI silicon on insulator
- device layer 12 It is contemplated from device layer 12 to have a thickness in range of 1 micrometer to 6 micrometers, and preferably, in the range of 2 micrometers to 5 micrometers.
- Device layer 12 is supported on upper surface 13 of first silicon substrate 15 .
- a layer 17 of silicon oxide is provided between upper surface 13 of first silicon substrate 15 and first side 19 of device layer 12 .
- Device layer 12 further includes thermally grown layer 14 of silicon oxide, e.g. 150 nm-thick, on a second side 21 thereof.
- photoresist 16 is spun on layer 14 at a predetermined speed (e.g. 2500 rpm) for a predetermined time period (e.g. 30 seconds). Thereafter, device layer 12 is soft baked at a predetermined temperature (e.g. 115° C.) for predetermined time period (e.g. 1 minute). The exposure time of the photoresist 16 is set to a predetermined time period (e.g. 9.5 seconds) with a selected dose of electromagnetic radiation (e.g. 10 mW/cm2). It is further contemplated to exposed photoresist 16 to a selected developer for a predetermined time period (e.g. 1 minute).
- a predetermined speed e.g. 2500 rpm
- a predetermined time period e.g. 30 seconds
- device layer 12 is soft baked at a predetermined temperature (e.g. 115° C.) for predetermined time period (e.g. 1 minute).
- the exposure time of the photoresist 16 is set to a predetermined time period
- photoresist 16 With photoresist 16 received on layer 14 , photoresist 16 is lithographically patterned with the concentric circle geometry of a conventional Fresnel zone plate and layer 14 is etched in a conventional manner, such as by buffered oxide etching, for a predetermined, time period (e.g. 2 minutes).
- Inductively Coupled Plasma is utilized for deep reactive ion etching of device layer 12 so as to anisotropically etch the concentric circles 20 a - 20 e of a conventional Fresnel zone plate into device layer 12 .
- FIG. 1 c Thereafter, transfer layer 22 is provided in concentric circles 20 a - 20 e of device layer 12 to protect device layer 12 during the etching of silicon nanowires therein, as hereinafter described.
- First surface 26 of second silicon substrate 24 is positioned adjacent second side 21 of device layer 12 so as to retain transfer layer 22 in concentric circles 20 a - 20 e , FIG. 1 d .
- First silicon substrate 15 is removed from layer 17 by deep reactive ion etching and layer 17 is removed from device layer 12 by immersing layer 17 in a buffer oxide etching material for a predetermined period of time e.g. 15 minutes, FIG. 1 e.
- the etching process of silicon nanowires into first side 19 of device layer 12 includes the steps of both silver (Ag) nanoparticle deposition and electroless chemical etching. More specifically, as is known, silver nitrate (AgNO3) is the chemical precursor for Ag nanoparticles in the chemical etchant wherein hydrogen reduces Ag+ to Ag nanoparticles on a silicon (Si) surface.
- the chemical reaction can be expressed as: H 2 O 2 +2Ag + ⁇ O 2 +2H + +2Ag Expression (1)
- the electroless etching mechanism can be summarized by two half-cell reactions in a galvanic cell to explain the etching behavior at the contact interface of Ag nanoparticles and device layer 12 .
- the cathode reaction that occurs at the Ag nanoparticle site can be expressed as: H 2 O 2 +2H + +2 e ⁇ ⁇ 2H 2 O Expression (2)
- the anode reaction that occurs at device layer 12 can be expressed as: Si+2H 2 O ⁇ SiO 2 +4H + +4 e ⁇ Expression (3)
- the overall reaction can be expressed as: Si+2H 2 O 2 +6HF ⁇ H 2 SiF 6 +4H 2 O Expression (5)
- the galvanic cell is established because the electrical potential of Ag nanoparticles is higher than the Fermi level of device layer 12 .
- Ag nanoparticles deposited on first side 19 of device layer 12 acting as the cathode, accumulate the electrons generated from the oxidation of the surrounding Si of device layer 12 .
- the newly formed oxide is immediately attacked and removed away by HF.
- the Ag nanoparticles sink into the pits generated in first side 19 of device layer 12 .
- a continuous etching process will make the pits (silicon nanowires 30 ) deeper.
- the vertically aligned silicon nanowires 30 are obtained in first side 19 of device layer 12 , FIG. 1 f
- silicon nanowires 30 are etched through entirety of device layer 12 , thereby have a length in the range of 1 micrometer to 6 micrometers, and preferably, in the range of 2 micrometers to 5 micrometers.
- the silicon nanowire etching process is dependent on the concentration of AgNO 3 , H 2 O 2 and HF used.
- concentration of AgNO 3 influences the Ag particle size and the density of particles formed on the silicon surface.
- the randomly distributed silicon nanowires 30 in first side 19 of device layer 12 to have a spacing of less than the wavelength (subwavelength structure) of incident light 34 .
- FIGS. 2-4 and to have lower light reflection properties as compared to well-ordered silicon nanowires.
- a thin, transparent and flexible tuning structure is adhered to device layer 12 , FIG. 1 g . More specifically, it is contemplated to adhere first side 38 of tuning structure 36 to first side 19 of device layer 12 .
- tuning structure is fabricated from a transparent elastomer, such as polydimethylsiloxane (PDMS). Therefore, transfer layer 22 is heated to it's the melting temperature and removed by concentric circles 20 a - 20 .
- FIG. 1 h thereby providing Fresnel zone plate 10 in accordance with the present invention, FIG. 2 .
- zone plate 10 includes alternating opaque and transparent zones which renders a focused light spot by the constructive interference of light reflected from the transparent zones.
- the opaque zones of zone plate 10 are defined by a series of concentric rings (e.g. rings 40 a - 40 e , in FIGS. 1 h , 3 a and 3 b ).
- Concentric rings 40 a - 40 e corresponding to the portions of device layer 12 wherein silicon nanowires 30 are etched, as heretofore described.
- the transparent zones of zone plate 10 are defined by concentric circles 20 a - 20 e formed in zone plate 10 .
- the transparency of tuning structure 36 allows defracted incident light to pass through concentric circles 20 a - 20 e of device layer 12 .
- zone plate 10 is aligned with source 42 of incident light 34 positioned on a first side 44 of zone plate 10 .
- Incident light 34 passes through tuning structure 36 and defracts around the opaque zones, namely, rings 40 a - 40 e . Rings 40 a - 40 e are spaced so that the diffracted incident light constructively interferes at a focused light spot 46 so as to create an image there.
- FIG. 3 b the focal length of zone plate 10 is increased.
- Zone plate assembly 50 includes first and second zone plates 52 a and 52 b , respectively.
- First and second zone plates 52 a and 52 b are identical in structure such that the description hereinafter of zone plate 52 a is understood to describe zone plate 52 b as if fully described herein.
- Zone plate 52 a includes alternating opaque and transparent zones which render a focused light pattern along a line by the constructive interference of light reflected from the transparent zones.
- Zone plate 52 a includes a thin, transparent and flexible tuning structure, generally designated by the reference number 56 .
- Tuning structure 56 extends along an axis and includes first and second sides 58 and 60 , respectively; first and second ends 62 and 64 , respectively; and an upper surface 66 .
- tuning structure is fabricated from a transparent elastomer, such as polydimethylsiloxane (PDMS).
- PDMS polydimethylsiloxane
- the opaque zones of zone plate 52 a are formed from a silicon wafer, as heretofore described with respect to zone plate 10 , and are defined by a series of generally spaced, parallel lines (e.g.
- lines 54 a - 54 e extending from first end 62 of tuning structure 56 to second end 64 of tuning structure 56 along upper surface 66 thereof.
- Lines 54 a - 54 e corresponding to the portions of the silicon wafer wherein silicon nanowires 30 are etched, as heretofore described.
- the transparent zones of zone plate 52 a are defined by a series of generally spaced, channels (e.g. channels 68 a - 68 d ) extending from first end 62 of tuning structure 56 to second end 64 of tuning structure 56 between adjacent lines 54 a - 54 e , as depicted in FIG. 4 .
- first zone plate 52 a is aligned with source 42 of incident light 34 positioned on a first side 70 thereof.
- Second zone plate 52 b is aligned with source 42 of incident light 34 and positioned on a second side 72 of first zone plate 52 a such that the axis of tuning structure 56 of second zone plate 52 b is perpendicular to the axis of tuning structure 56 of first zone plate 52 a .
- incident light 34 passes through tuning structure 56 of first zone plate 52 a and defracts around the opaque zones, namely, lines 54 a - 54 e .
- Lines 54 a - 54 e are spaced so that the diffracted incident light constructively interferes along a line on second side 72 of first zone plate 52 a .
- the diffracted incident light passes through tuning structure 56 of second zone plate 52 b and defracts around the opaque zones, namely, lines 54 a - 54 e of second zone plate 52 b .
- Lines 54 a - 54 e of second zone plate 52 b are spaced so that the diffracted incident light constructively interferes at a focused light spot so as to create an image there.
- first and second zone plates 52 a and 52 b In order to change the focal length of first and second zone plates 52 a and 52 b , respectively, it is contemplated to mechanically stretch tuning structures 56 of first and to second zone plates 52 a and 52 b , respectively, with an external force in a direction perpendicular to lines 54 a - 54 e such that the widths the alternating opaque and transparent zones (lines 54 a - 54 e and channels 68 a - 68 e , respectively) increase. By increasing the widths of the alternating opaque and transparent zones, the focal lengths of first and second zone plates 52 a and 52 b , respectively, are increased.
Abstract
Description
H2O2+2Ag+→O2+2H++2Ag Expression (1)
H2O2+2H++2e −→2H2O Expression (2)
Further, the anode reaction that occurs at
Si+2H2O→SiO2+4H++4e− Expression (3)
SiO2+6HF→H2SiF6+2H2O Expression (4)
Hence, the overall reaction can be expressed as:
Si+2H2O2+6HF→H2SiF6+4H2O Expression (5)
Claims (15)
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Cited By (3)
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US20150091756A1 (en) * | 2013-09-27 | 2015-04-02 | Raytheon Bbn Technologies Corp. | Reconfigurable aperture for microwave transmission and detection |
US20160086681A1 (en) * | 2014-09-24 | 2016-03-24 | Carl Zeiss X-ray Microscopy, Inc. | Zone Plate and Method for Fabricating Same Using Conformal Coating |
CN107817257A (en) * | 2016-09-14 | 2018-03-20 | 波音公司 | X ray back scattering for part inspection |
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KR20170137364A (en) * | 2016-06-03 | 2017-12-13 | 삼성전자주식회사 | Electromagnetic wave focusing device and optical apparatus including the same |
CN111238363B (en) * | 2018-11-28 | 2021-09-07 | 中国科学院光电技术研究所 | Multi-wave radial shearing interferometer based on Fresnel zone plate |
CN112558206A (en) * | 2019-09-26 | 2021-03-26 | 中国科学院微电子研究所 | Fresnel zone plate and preparation method thereof |
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CN107817257A (en) * | 2016-09-14 | 2018-03-20 | 波音公司 | X ray back scattering for part inspection |
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