US20080245770A1 - Positive Displacement Pumping Chamber - Google Patents

Positive Displacement Pumping Chamber Download PDF

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Publication number
US20080245770A1
US20080245770A1 US12/089,899 US8989906A US2008245770A1 US 20080245770 A1 US20080245770 A1 US 20080245770A1 US 8989906 A US8989906 A US 8989906A US 2008245770 A1 US2008245770 A1 US 2008245770A1
Authority
US
United States
Prior art keywords
chamber
substrate
volume
gas
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/089,899
Other languages
English (en)
Inventor
Carl David M. Brancher
John MacNeil
Robert Kenneth Trowell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aviza Europe Ltd
Original Assignee
Aviza Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0520694A external-priority patent/GB0520694D0/en
Application filed by Aviza Europe Ltd filed Critical Aviza Europe Ltd
Priority to US12/089,899 priority Critical patent/US20080245770A1/en
Assigned to AVIZA TECHNOLOGY LIMITED reassignment AVIZA TECHNOLOGY LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MACNEIL, JOHN, TROWELL, ROBERT KENNETH, BRANCHER, CARL DAVID M.
Publication of US20080245770A1 publication Critical patent/US20080245770A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • B44C1/227—Removing surface-material, e.g. by engraving, by etching by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Definitions

  • Atomic Layer deposition is a chemical vapor deposition process in which self-limiting surface reactions produce extremely conformal coatings.
  • ALD Atomic Layer deposition
  • k high dielectric constant
  • a reactant gas containing Aluminum such as trimethyl aluminum Al(CH 3 ) 3 is firstly introduced into a chamber containing the substrate(s) such that a monolayer of this gas adheres to and in many cases saturates the surface.
  • the apparatus may include an inlet for process gas and the moveable wall may be moveable to draw process gas through the inlet during the process part of the process cycle.
  • There may be a plurality of inlet valves for respective process gases.
  • a purge gas inlet may also be provided to provide purge gas to the underside of the piston in its processing position.
  • the exhaust valve 10 may be optional, depending on the vacuum pumping arrangement. Its main function may be to stop exhaust being sucked back into the process chamber when the piston rapidly expands the chamber volume. It may also be necessary, when the piston is moved to reduce the process volume.
  • the piston or wall may move rapidly and affect a chamber purge in less than one second.
  • valves may be timed to the piston movement by mechanical or electrical or electronic means.
  • the piston may be on a crank or may be driven such as by a linear motor.
  • the speed and distance of travel and number of strokes of the piston may be the same or be varying for the different steps of the cyclic process as is found necessary to optimize the process.
  • FIG. 3 shows, by way of example, a piston/valves sequence matrix useable in a metal oxide deposition process.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
US12/089,899 2005-10-11 2006-10-11 Positive Displacement Pumping Chamber Abandoned US20080245770A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/089,899 US20080245770A1 (en) 2005-10-11 2006-10-11 Positive Displacement Pumping Chamber

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US72493805P 2005-10-11 2005-10-11
GB0520694A GB0520694D0 (en) 2005-10-12 2005-10-12 Positive displacement pumping chamber
GB0520694.1 2005-10-12
PCT/GB2006/003766 WO2007042797A1 (en) 2005-10-11 2006-10-11 Positive displacement pumping chamber
US12/089,899 US20080245770A1 (en) 2005-10-11 2006-10-11 Positive Displacement Pumping Chamber

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2006/003766 A-371-Of-International WO2007042797A1 (en) 2005-10-11 2006-10-11 Positive displacement pumping chamber

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/773,711 Division US8728337B2 (en) 2005-10-11 2013-02-22 Positive displacement pumping chamber

Publications (1)

Publication Number Publication Date
US20080245770A1 true US20080245770A1 (en) 2008-10-09

Family

ID=37520290

Family Applications (2)

Application Number Title Priority Date Filing Date
US12/089,899 Abandoned US20080245770A1 (en) 2005-10-11 2006-10-11 Positive Displacement Pumping Chamber
US13/773,711 Active US8728337B2 (en) 2005-10-11 2013-02-22 Positive displacement pumping chamber

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/773,711 Active US8728337B2 (en) 2005-10-11 2013-02-22 Positive displacement pumping chamber

Country Status (6)

Country Link
US (2) US20080245770A1 (ko)
EP (1) EP1935005B1 (ko)
JP (1) JP2009512206A (ko)
KR (1) KR101292938B1 (ko)
CN (1) CN101356620B (ko)
WO (1) WO2007042797A1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110209663A1 (en) * 2007-09-06 2011-09-01 Intermolecular, Inc. Multi-Region Processing System and Heads
WO2011123664A2 (en) * 2010-04-01 2011-10-06 Electro Scientific Industries, Inc. Improved sample chamber for laser ablation inductively coupled plasma mass spectroscopy
CN103046022A (zh) * 2011-10-13 2013-04-17 中国科学院微电子研究所 基于可伸缩腔室的原子层沉积设备及其使用方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10950454B2 (en) * 2017-08-04 2021-03-16 Lam Research Corporation Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method
JP6966265B2 (ja) * 2017-08-31 2021-11-10 株式会社Ｓｃｒｅｅｎホールディングス ポンプ装置、処理液供給装置、基板処理装置、液抜き方法および液置換方法
EP3476972A1 (en) * 2017-10-25 2019-05-01 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process chamber and method for purging the same
CN109161853B (zh) * 2018-09-25 2020-12-18 合肥京东方光电科技有限公司 蒸镀设备以及蒸镀方法
CN110349886B (zh) * 2019-06-19 2022-02-15 江苏大学 一种大面积钙钛矿太阳电池制备装置及制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030029568A1 (en) * 2001-08-09 2003-02-13 Applied Materials, Inc. Pedestal with integral shield
US20060180082A1 (en) * 2003-03-25 2006-08-17 Kunihiko Iwamoto Film formation apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199820A (ja) * 1989-01-30 1990-08-08 Fujitsu Ltd 気相処理装置
JPH05226252A (ja) * 1992-02-10 1993-09-03 Fujitsu Ltd 気相成長装置および該装置を用いた気相成長方法
US5730801A (en) * 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US20030024900A1 (en) * 2001-07-24 2003-02-06 Tokyo Electron Limited Variable aspect ratio plasma source
US7115517B2 (en) * 2003-04-07 2006-10-03 Applied Materials, Inc. Method of fabricating a dual damascene interconnect structure
JP4676366B2 (ja) * 2005-03-29 2011-04-27 三井造船株式会社 成膜装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030029568A1 (en) * 2001-08-09 2003-02-13 Applied Materials, Inc. Pedestal with integral shield
US20060180082A1 (en) * 2003-03-25 2006-08-17 Kunihiko Iwamoto Film formation apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110209663A1 (en) * 2007-09-06 2011-09-01 Intermolecular, Inc. Multi-Region Processing System and Heads
US8770143B2 (en) * 2007-09-06 2014-07-08 Intermolecular, Inc. Multi-region processing system
WO2011123664A2 (en) * 2010-04-01 2011-10-06 Electro Scientific Industries, Inc. Improved sample chamber for laser ablation inductively coupled plasma mass spectroscopy
WO2011123664A3 (en) * 2010-04-01 2012-02-23 Electro Scientific Industries, Inc. Improved sample chamber for laser ablation inductively coupled plasma mass spectroscopy
US8319176B2 (en) 2010-04-01 2012-11-27 Electro Scientific Industries, Inc. Sample chamber for laser ablation inductively coupled plasma mass spectroscopy
US8710435B2 (en) 2010-04-01 2014-04-29 Electro Scientific Industries, Inc. Sample chamber for laser ablation inductively coupled plasma mass spectroscopy
CN103046022A (zh) * 2011-10-13 2013-04-17 中国科学院微电子研究所 基于可伸缩腔室的原子层沉积设备及其使用方法

Also Published As

Publication number Publication date
CN101356620A (zh) 2009-01-28
KR101292938B1 (ko) 2013-08-02
JP2009512206A (ja) 2009-03-19
CN101356620B (zh) 2010-11-03
EP1935005B1 (en) 2016-12-21
WO2007042797A1 (en) 2007-04-19
EP1935005A1 (en) 2008-06-25
US20130186857A1 (en) 2013-07-25
US8728337B2 (en) 2014-05-20
WO2007042797A8 (en) 2008-04-24
KR20080082599A (ko) 2008-09-11

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AS Assignment

Owner name: AVIZA TECHNOLOGY LIMITED, UNITED KINGDOM

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BRANCHER, CARL DAVID M.;MACNEIL, JOHN;TROWELL, ROBERT KENNETH;REEL/FRAME:021075/0531;SIGNING DATES FROM 20080422 TO 20080428

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION