US20080000585A1 - Apparatus for monitoring electron density and electron temperature of plasma and method thereof - Google Patents

Apparatus for monitoring electron density and electron temperature of plasma and method thereof Download PDF

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US20080000585A1
US20080000585A1 US11/467,062 US46706206A US2008000585A1 US 20080000585 A1 US20080000585 A1 US 20080000585A1 US 46706206 A US46706206 A US 46706206A US 2008000585 A1 US2008000585 A1 US 2008000585A1
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electromagnetic wave
plasma
frequency
electron
electron density
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Jung Hyung Kim
Ju Young Yun
Dae Jin Seong
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Korea Research Institute of Standards and Science KRISS
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Korea Research Institute of Standards and Science KRISS
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
    • H05H1/0062—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by using microwaves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Definitions

  • the present invention relates, in general, to a technique that measures and monitors an electron density and an electron temperature of a plasma by probing and scanning each eigenfrequency, which is correlated to an electron density and electron temperature of a plasma, in order to monitor a process status using the plasma, such as a semiconductor fabrication process.
  • the present invention relates to an apparatus for monitoring an electron density and electron temperature of a plasma, including a probe of an antenna structure for transmitting/receiving a series of electromagnetic waves of a band to/from a corresponding plasma and an analysis tool for analyzing the bands of specific electromagnetic wave cutoff frequency and absorption frequency of electromagnetic waves transmitted, which are cut off or absorbed with respect to a corresponding plasma, and calculating an electron density and electron temperature of the corresponding plasma based on the analysis result, and a method thereof.
  • Equipments used to fabricate semiconductor devices include an ion implantation equipment for implanting a desired impurity into a predetermined region of a wafer, a furnace for growing a thermal oxide layer, a deposition equipment for depositing a conduction layer or an insulating layer on the wafer, exposure and etch equipments for patterning the deposited conduction layer or the deposited insulating layer in a desired form, and the like.
  • a plasma equipment for forming plasma within a sealed chamber of a vacuum state and implanting a reaction gas to deposit or etch a material layer has been widely used as the equipment for depositing a predetermined material layer on the wafer or etching a predetermined material layer formed in the wafer.
  • tools capable of measuring an electron density and an ion density within plasma include Langmuir probe, a plasma oscillation probe, a plasma absorption probe, an OES (Optical Emission Spectroscopy), a laser Thomson scattering method, and so on.
  • the Langmuir probe of the tools is widely used.
  • the probe in order to measure the plasma characteristic, the probe is inserted into plasma within a plasma chamber from the outside, and voltages are varied from a negative potential to a positive potential (i.e., in the range of ⁇ 200V to 200V) and are measured by varying an externally supplied DC.
  • the concentration of the plasma can be measured by measuring the generated current in order to analyze the correlation between the generated current and the voltage applied to the probe.
  • the plasma density can be measured in real-time while the process is performed because the plasma density is measured by inserting the probe into the chamber.
  • the conventional Langmuir probe has a noise problem due to RF (Radio Frequency) oscillation, a problem in that a thin film material is deposited on the probe at the time of depositing the material in the semiconductor process, a problem in that the probe becomes small due to etching at the time of a dry etch process, and the like. This makes it impossible to apply the Langmuir probe to an actual mass-production process.
  • RF Radio Frequency
  • the conventional plasma oscillation probe is constructed to use an electron beam and employs a hot filament in order to produce the electron beam.
  • the plasma oscillation probe is problematic in that it has a narrow operating condition, such as that corresponding hot filament is broken at a pressure of 50 mT or more.
  • the plasma oscillation probe is also problematic in that the reaction container is polluted due to the evaporation of hot filament upon heating in order to emit thermal electrons.
  • the conventional plasma absorption probe is problematic in that correction must be carried out using an accurate plasma density diagnosis tool before operation.
  • a structure for improving the problem has been proposed.
  • the proposed structure requires several steps of complicate calculation processes for calculating an absolute value of a measurement density.
  • the proposed structure is problematic in that the effectiveness is low since physically assumed conditions are included.
  • the electron temperature measurement method employing OES is problematic in that it is commercially applied since sufficient data are not accumulated.
  • the laser Thomson scattering method is problematic in that it is used only within a laboratory other than a mass-production system because the size is very large and the structure is very complicate.
  • the present invention has been made in view of the above problems occurring in the prior art, and it is a first object of the present invention to provide an apparatus for monitoring an electron density and electron temperature of a plasma, including an electromagnetic wave transceiver of an antenna structure, which can transmit/receive electromagnetic waves of a series of bands so that a frequency band that is correlated to an electron density and electron temperature can be measured/monitored in real-time.
  • an apparatus for monitoring an electron density and electron temperature of a plasma including an electromagnetic wave generator that continuously transmits electromagnetic wave of a series of frequency bands, an electromagnetic wave transceiver connected to a plasma within a reaction container and electrically connected to the electromagnetic wave generator so that a frequency of the transmitted electromagnetic wave is correlated to the electron density and electron temperature of the plasma, the electromagnetic wave transceiver transmitting the electromagnetic wave, a frequency analyzer electrically connected to the electromagnetic wave transceiver, for analyzing the frequency of the electromagnetic wave received from the electromagnetic wave transceiver, and a computer electrically connected to the electromagnetic wave generator and the frequency analyzer, for calculating a correlation between the electron density and electron temperature, and a corresponding electromagnetic wave based on a frequency band-based transmission command of the electromagnetic wave and the analyzed data.
  • the electromagnetic wave transceiver may include first and second coaxial cables that are electrically connected to the electromagnetic wave generator and the frequency analyzer, respectively, and are disposed in parallel, and a transmit antenna and a receive antenna that are connected to and projected from one ends of the first and second coaxial cables, respectively, on the same axial line and are connected to the plasma in order to transmit and receive the electromagnetic wave.
  • Each of the first and second coaxial cables may include a dielectric-coated layer coated/shielded at a predetermined thickness.
  • the apparatus may further include a conveyer connected to the other end of the electromagnetic wave transceiver, for causing the electromagnetic wave transceiver to be selectively conveyed within the reaction container.
  • the conveyer may be driven by a stepping motor.
  • the conveyer may be driven by an oil-pressure cylinder.
  • the electromagnetic wave transceiver is disposed along a radial direction of the reaction container in obtaining characteristic distributions of the plasma within the reaction container.
  • FIG. 1 shows the construction of an apparatus for monitoring an electron density and electron temperature of a plasma according to an embodiment of the present invention
  • FIG. 2 is a cross-sectional view of transmit/receive antennas shown in FIG. 1 ;
  • FIG. 3 is a view illustrating convey within a reaction container of an electromagnetic wave transceiver shown in FIG. 1 ;
  • FIG. 4 a is a graph illustrating cutoff frequencies measured using the monitoring apparatus according to an embodiment of the present invention.
  • FIG. 4 b is a graph illustrating absorption frequencies measured using the monitoring apparatus according to an embodiment of the present invention.
  • FIG. 5 is a graph illustrating electron density and electron temperature measured using the monitoring apparatus according to an embodiment of the present invention.
  • FIG. 6 is a flowchart illustrating a method of measuring an electron temperature of a plasma according to an embodiment of the present invention.
  • FIG. 1 shows the construction of an apparatus for monitoring an electron density and electron temperature of a plasma according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of transmit/receive antennas shown in FIG. 1 .
  • the monitoring apparatus is adapted to measure a corresponding characteristic value and monitor the characteristic value in real-time, by finding a correlation between the characteristics of electromagnetic wave and a plasma 100 a (more particularly, an electron density, an electron temperature, and so on) and monitoring.
  • the monitoring apparatus of the present invention includes an electromagnetic wave transceiver 200 for transmitting/receiving electromagnetic wave to/from the plasma 100 a.
  • the electromagnetic wave transceiver 200 has an antenna structure.
  • a cylindrical reaction container 100 What is contained in a cylindrical reaction container 100 is the plasma 100 a. It has been known that if electromagnetic wave of a specific band is transmitted to the plasma 100 a, corresponding electromagnetic wave is cut off or absorbed. A specific electromagnetic wave of a frequency band that is cut off or absorbed as described above becomes the index of an electron density or an electron temperature of the plasma 100 a. It is therefore possible to obtain an electron density and electron temperature of the plasma 100 a based on a correlation between the electromagnetic wave and the plasma 100 a.
  • the correlation is established in the electromagnetic wave transceiver 200 .
  • An electromagnetic wave generator 300 and the frequency analyzer 400 are electrically connected to the electromagnetic wave transceiver 200 in order to transmit electromagnetic wave to the electromagnetic wave transceiver 200 or to analyze received electromagnetic wave.
  • the electromagnetic wave transceiver 200 includes two coaxial cables 210 , 220 that are disposed in parallel.
  • Each of the coaxial cables 210 , 220 is surrounded with an additional dielectric-coated layer 230 and a ground shield, for preventing the coaxial cables 210 , 220 from noise, heat, etc. Accordingly, electromagnetic wave can be transmitted and received more accurately.
  • the dielectric-coated layer 230 may be formed of alumina or quartz.
  • transmit/receive antennas 210 a, 220 b are connected to and projected from one ends of the coaxial cables 210 , 220 , respectively, on the same axial line, and transmit/receive electromagnetic wave to/from the plasma 100 a.
  • the antennas 210 a, 220 a may be disposed at a distance of about 1 mm to 5 mm and may have a length of about 5 mm to 10 mm.
  • the distance is only illustrative. The smaller the distance, the better.
  • the length of each of the antennas 210 a, 220 a may be varied depending on a wavelength of electromagnetic wave used.
  • the electromagnetic wave generator 300 is connected to the other end of the first coaxial cable 210 and consecutively transmits electromagnetic waves of a frequency band of about 50 kHz to 10 GHz to the first coaxial cable 210 and the transmit antenna 210 a. Consequently, a series of electromagnetic waves of a frequency band can be transmitted to the plasma 100 a consecutively.
  • the cutoff frequency of the transmitted electromagnetic waves is cut off with respect to the plasma 100 a.
  • the cutoff frequency can be used to calculate and obtain an electron density of a corresponding plasma 100 a.
  • an electromagnetic wave of a band absorbed by the plasma 100 a is an absorption electromagnetic wave, which can be used to calculate and obtain an electron temperature of a corresponding plasma 100 a.
  • the frequency analyzer 400 is also connected to the other end of the second coaxial cable 220 .
  • the frequency analyzer 400 serves to analyze an amplitude from a frequency of electromagnetic wave, which is received and obtained by the receive antenna 220 a and the second coaxial cable 220 .
  • the receive rate of the electromagnetic wave in the receive antenna 220 a is very weak. Accordingly, the electromagnetic wave of the weakest receive rate can be analyzed as the cutoff frequency.
  • the frequency analyzer 400 can identify the weakest frequency by analyzing a frequency, an amplitude, and so on of the obtained electromagnetic wave. It is therefore possible to analyze/obtain the cutoff frequency.
  • the electromagnetic wave is weakly reflected from the transmit antenna 220 a and the first coaxial cable 220 . It causes to generate resonance in the sheath space between the plasma 100 a and the transmit antenna 220 a by way of a kind of a cavity, resulting in a strong absorption of the electromagnetic wave. Therefore, a signal of the reflected electromagnetic wave becomes the weakest. That is, it is meant that a ratio in which the electromagnetic wave is reflected from the transmit antenna again is low. It is possible to obtain/acquire a corresponding frequency band of the absorbed electromagnetic wave by analyzing a frequency band, amplitude, etc. of the weakly reflected electromagnetic wave. Accordingly, there is provided a structure capable of analyzing/acquiring an absorption frequency band.
  • a computer 500 is provided to calculate an electron density and an electron temperature based on the occurrence of a series of the electromagnetic waves, a received command, and analyzed frequency data.
  • the computer 500 is electrically connected the electromagnetic wave generator 300 and the frequency analyzer 400 .
  • the electromagnetic wave transceiver 200 is connected to the plasma 100 a within the reaction container 100 and transmits electromagnetic wave, a frequency band, etc. is obtained from a weakly received electromagnetic wave and data of a cutoff frequency and an absorption frequency are transmitted to the computer 500 .
  • Calculation equations capable of calculating an electron density and/or an electron temperature based on a frequency are programmed into the computer 500 . Accordingly, a structure that can calculate and acquire an electron density and electron temperature of a corresponding plasma 100 a can be provided.
  • FIG. 3 is a view illustrating convey within the reaction container 100 of the electromagnetic wave transceiver 200 shown in FIG. 1 .
  • the monitoring apparatus includes a conveyer 600 .
  • the conveyer 600 To the other end of the electromagnetic wave transceiver 200 is connected the conveyer 600 .
  • the conveyer 600 may have a power structure that allows for a straight-line convey, such as a stepping motor structure or an oil-pressure cylinder structure.
  • the conveyer 600 is constructed to convey the electromagnetic wave transceiver 200 , which is disposed to move along a radial direction within the cylindrical reaction container 100 , in a straight line forward and backward.
  • the conveyer 600 is constructed to convey the electromagnetic wave transceiver 200 in the straight line. Therefore, the electromagnetic wave transceiver 200 can transmit/receive electromagnetic wave while moving in the straight line within the plasma 100 a. Furthermore, there is provided a structure capable of analyzing, measuring, and monitoring spatial distributions of an electron density and electron temperature of a corresponding plasma 100 a.
  • FIG. 4 a is a graph illustrating cutoff frequencies measured using the monitoring apparatus according to an embodiment of the present invention
  • FIG. 4 b is a graph illustrating absorption frequencies measured using the monitoring apparatus according to an embodiment of the present invention.
  • the X axis denotes a frequency band (Hz) and the Y axis denotes an amplitude of electromagnetic wave (au.), which is received by the receive antenna 220 a.
  • the amplitude increases, then decreases at about 1.5 ⁇ 10 9 Hz, and then becomes the lowest at a frequency of about 2.5 ⁇ 10 9 Hz (indicated by an arrow in the drawing).
  • the cutoff frequency is a frequency of a band that does not transmit the plasma 100 a when the transmit antenna 210 a transmits the electromagnetic wave to the plasma 100 a as mentioned earlier. Accordingly, a very weak signal is received by the receive antenna 220 a.
  • the cutoff frequency serves as an index to detect an electron density of the plasma 100 a.
  • the electromagnetic wave generator 300 generates electromagnetic waves.
  • the generated electromagnetic waves are consecutively transmitted to the transmit antenna 210 a through the first coaxial cable 210 on a frequency basis and are then transmitted to the plasma 100 a.
  • the electromagnetic waves that have been transmitted and have been cut off and weaken in the plasma 100 a as described above are continuously received by the receive antenna 220 a.
  • the electromagnetic waves are then transmitted to the frequency analyzer 400 connected to the second coaxial cable 220 and are then analyzed on a frequency-band basis.
  • the analyzed data are transmitted to the computer 500 and are then indicated as the graph as shown in FIG. 4 a. Furthermore, what is indicated as a frequency band of the lowest amplitude in the graph is the cutoff frequency. Therefore, there is provided a structure in which the computer 500 can calculate/acquire an electron density of a corresponding plasma 100 a based on the cutoff frequency acquired through the above operation.
  • an X axis denotes a frequency band (Hz) and a Y axis denotes a predetermined reflection coefficient (dB). Accordingly, in the case where electromagnetic waves are transmitted to a corresponding plasma 100 a, an absorption frequency can be acquired by analyzing electromagnetic wave of a corresponding frequency having the lowest reflection coefficient through a process in which the electromagnetic wave is reflected and received.
  • Analyzed data of the absorption frequency obtained as described above are transmitted to the computer 500 . Accordingly, there is provided a structure in which the computer 500 can measure an electron temperature of a corresponding plasma 100 a based on the analyzed data.
  • FIG. 5 is a graph illustrating electron density and electron temperature measured using the monitoring apparatus according to an embodiment of the present invention.
  • an X axis denotes a pressure (mTorr) of the plasma 100 a within the reaction container 100
  • a Y axis on the right side denotes an electron density (cm ⁇ 3 ) of the plasma 100 a on a pressure basis
  • a Y axis on the left side denotes an electron temperature (eV) of the plasma 100 a on a pressure basis.
  • FIG. 5 shows that the slope of the graph of the electron density indicated by a straight line and triangles is opposite to the slope of the graph of the electron temperature indicated by a straight line and squares.
  • the apparatus for monitoring an electron density and electron temperature of a plasma has a structure in which one electromagnetic wave transceiver 200 in which the conveyer 600 is connected to one end of the reaction container 100 is mounted.
  • the present invention can be applied to a structure in which respective electromagnetic wave transceivers 200 are mounted in the other side, and upper and lower sides of the reaction container 100 , and the conveyers 600 are connected to the respective electromagnetic wave transceivers 200 and measure three-dimensional spatial distributions of an electron density and electron temperature of the X-Y-Z axis while moving within the reaction container 100 in the respective axial directions.
  • the transmit antenna 210 a and the receive antenna 220 a of the straight-line type have been illustrated above as means for transmitting and receiving electromagnetic wave. It is however to be noted that a loop antenna, a superturnstile antenna, an excitation antenna, a parabola antenna or the like may be selectively used as the means for transmitting and receiving electromagnetic wave.
  • FIG. 6 is a flowchart illustrating a method of measuring an electron temperature of a plasma according to an embodiment of the present invention.
  • a method of monitoring an electron temperature using the electron temperature monitoring apparatus of the present invention includes a first step (S 1 ) of allowing the electromagnetic wave generator 300 to apply electromagnetic wave of a predetermined frequency to the transmit antenna 210 a, a second step (S 2 ) of allowing the receive antenna 220 a to analyze a frequency of the electromagnetic wave received from the transmit antenna 210 a, a third step (S 3 ) of measuring a cutoff frequency based on the analyzed frequency, a fourth step (S 4 ) of calculating an electron density of a plasma using the measured cutoff frequency, a fifth step (S 5 ) of allowing the electromagnetic wave generator 300 to transmit electromagnetic wave, monitor reflected wave returned to the transmit antenna 210 a, and measure a surface wave absorption frequency, and a sixth step (S 6 ) of calculating an electron temperature based on the plasma density and the absorption frequency found in the fourth step (S 4 ) and the fifth step (S 5 ), respectively.
  • the plasma itself includes a unique plasma frequency whose state is changed.
  • the plasma frequency is directly related to the plasma density. Therefore, the electron density of the plasma can be measured directly by measuring the plasma frequency.
  • the frequency has a property that if the electromagnetic wave is incident on the plasma, it is cut off and does not transmit the plasma. Therefore, if the electromagnetic wave generating apparatus transmits a frequency of 50 kHz to 10 GHz to the transmit antenna, the electromagnetic wave output from the transmit antenna can be received by the receive antenna.
  • electromagnetic wave having the plasma frequency decided according to the plasma density does not pass through the plasma. Accordingly, the electromagnetic wave is not received by the receive antenna or only a very weak signal is received by the receive antenna.
  • the cutoff frequency of the lowest value can be found from the frequency spectrum through the frequency analyzer 400 .
  • the cutoff frequency is a plasma frequency ( ⁇ pe ).
  • the electron density of the plasma can be found based on the plasma frequency ( ⁇ pe ) in accordance with the following Equation 1.
  • ⁇ pe is the plasma frequency
  • n e is the electron density of the plasma
  • ⁇ 0 is the dielectric constant in the vacuum
  • e and m e are the electron charge and mass, respectively.
  • the electromagnetic wave generator 300 transmits electromagnetic wave and the transmit antenna 210 a monitors returned reflected wave, a surface wave absorption frequency of the transmit antenna 210 a can be measured.
  • Equation 2 the spectrum of the electromagnetic wave reflected from the transmit antenna 210 a of FIG. 1 is shown in FIG. 4 b.
  • a dispersion equation of the surface wave can be expressed in the following Equation 2.
  • ⁇ is the absorption frequency
  • ⁇ pe is the plasma frequency
  • K m , I m , K m ′, and I m ′ are modified Bessel functions
  • ⁇ 2 ⁇ / ⁇
  • ⁇ 2l
  • l is the length of the transmit antenna
  • a is the radius from the center of a metal unit of the transmit antenna to the boundary of the sheath
  • b is the radius of the metal unit of the transmit antenna.
  • an electron temperature T e can be found using the surface wave dispersion equation of the above-mentioned Equation 2, a Debye length ⁇ d defined by the following Equation 3, and the width s of the sheath.
  • FIG. 2 shows the relationship between the sheath width s of the transmit antenna, and “a” and “b”.
  • ⁇ d is the Debye length
  • T e is the electron temperature of the plasma
  • n e is the electron density of the plasma
  • ⁇ 0 is the dielectric constant in the vacuum
  • e is the electron charge
  • n is a given integer.
  • the cutoff frequency is the plasma frequency ⁇ pe and other parameters are constants corresponding to a structural antenna size. Accordingly, the electron temperature T e can be found by measuring the absorption frequency ⁇ .
  • an electron density and electron temperature of a plasma can be measured by detecting an eigenfrequency. Therefore, the present invention is advantageous in that it can be applied to a thin film plasma chemical deposition method of a semiconductor fabrication process, a plasma process apparatus in a dry etch process, and so on.
  • the apparatus of the present invention can be used as a plasma real-time monitoring apparatus. Therefore, there is an advantage in that the apparatus of the present invention can be utilized as a reliable process equipment since it can check a current status of a process equipment.

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US20090237667A1 (en) * 2007-03-26 2009-09-24 Nu Eco Engineering Co., Ltd. Particle density measuring probe and particle density measuring equipment
JP2015213020A (ja) * 2014-05-02 2015-11-26 三菱重工業株式会社 計測装置を備えたプラズマ発生装置及びプラズマ推進器
CN114152817A (zh) * 2021-11-08 2022-03-08 南昌大学 一种基于宽带天线的空间环境感知方法
US20220270852A1 (en) * 2021-02-19 2022-08-25 Korea Research Institute Of Standards And Science Device for measuring plasma ion density and apparatus for diagnosing plasma using the same
US11685820B2 (en) 2016-08-24 2023-06-27 Organoclick Ab Bio-based polyelectrolyte complex compositions with increased hydrophobicity comprising fatty compounds

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JP5618446B2 (ja) * 2010-08-17 2014-11-05 学校法人中部大学 プラズマの電子密度及び電子温度の測定プローブ及び測定装置
KR101244151B1 (ko) * 2010-12-28 2013-03-14 한국기초과학지원연구원 Ｅｐｉｃｓ기반의 표준 프레임워크가 탑재된 톰슨 산란 진단 시스템 데이터 처리장치
JP2020194676A (ja) * 2019-05-27 2020-12-03 東京エレクトロン株式会社 プラズマ密度モニタ、プラズマ処理装置、およびプラズマ処理方法

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KR100468277B1 (ko) * 2004-05-21 2005-01-29 (주)쎄미시스코 플라즈마 모니터를 갖는 대용량 플라즈마 장비들,해석모듈을 갖는 대용량 플라즈마 장비들 및 그들의사용방법들

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Cited By (7)

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Publication number Priority date Publication date Assignee Title
US20090237667A1 (en) * 2007-03-26 2009-09-24 Nu Eco Engineering Co., Ltd. Particle density measuring probe and particle density measuring equipment
US7782463B2 (en) * 2007-03-26 2010-08-24 Nu Eco Engineering Co., Ltd. Particle density measuring probe and particle density measuring equipment
JP2015213020A (ja) * 2014-05-02 2015-11-26 三菱重工業株式会社 計測装置を備えたプラズマ発生装置及びプラズマ推進器
US11685820B2 (en) 2016-08-24 2023-06-27 Organoclick Ab Bio-based polyelectrolyte complex compositions with increased hydrophobicity comprising fatty compounds
US20220270852A1 (en) * 2021-02-19 2022-08-25 Korea Research Institute Of Standards And Science Device for measuring plasma ion density and apparatus for diagnosing plasma using the same
US11735397B2 (en) * 2021-02-19 2023-08-22 Korea Research Institute Of Standards And Science Device for measuring plasma ion density and apparatus for diagnosing plasma using the same
CN114152817A (zh) * 2021-11-08 2022-03-08 南昌大学 一种基于宽带天线的空间环境感知方法

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