US20070254221A1 - Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel - Google Patents

Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel Download PDF

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US20070254221A1
US20070254221A1 US11788503 US78850307A US2007254221A1 US 20070254221 A1 US20070254221 A1 US 20070254221A1 US 11788503 US11788503 US 11788503 US 78850307 A US78850307 A US 78850307A US 2007254221 A1 US2007254221 A1 US 2007254221A1
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sulfonate
photosensitive resin
resin composition
group
dimethyl
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Hi-Kuk Lee
Yuko Yako
Kyu-Young Kim
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Samsung Display Co Ltd
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Hi-Kuk Lee
Yuko Yako
Kyu-Young Kim
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    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0048Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • HELECTRICITY
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    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/312Organic layers, e.g. photoresist
    • H01L21/3121Layers comprising organo-silicon compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14632Wafer-level processed structures

Abstract

A photosensitive resin composition includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes an organic fluorine compound having the structure
Figure US20070254221A1-20071101-C00001

a first silicone compound having the structure
Figure US20070254221A1-20071101-C00002

a second silicone compound having the structure
Figure US20070254221A1-20071101-C00003
The resin composition may be used in display panels.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • This application claims priority from Korean Patent Application No. 10-2004-0112255 filed on Dec. 24, 2004, the content of which is incorporated by reference herein in its entirety.
  • BACKGROUND OF THE INVENTION
  • (a) Field of the Invention
  • The present invention relates generally to a photosensitive resin composition, a thin film panel including a layer made with the photosensitive resin composition, and method of manufacturing the thin film panel. In particular, the invention relates to a photosensitive resin composition for insulation of a display panel.
  • (b) Description of Related Art
  • An active type display device such as an active matrix (AM) liquid crystal display (LCD) and an active matrix organic light emitting diode (OLED) display includes a plurality of pixels arranged in a matrix. The pixels in the matrix include switching elements, and the pixel boundaries are usually formed by a plurality of signal lines such as gate lines and data lines for transmitting signals to the switching elements. The switching elements of the pixels selectively transmit data signals from the data lines to the pixels in response to gate signals from the gate lines for displaying images. The pixels of the LCD adjust the transmittance of incident light according to the data signals, while those of the OLED display adjust the luminance of light emission according to the data signals.
  • The LCD and the OLED displays include a panel provided with the TFTs, the field-generating electrodes, the signal lines, etc. The panel has a layered structure that includes several conductive layers and insulating layers. The gate lines, the data lines, and the field-generating electrodes are formed of different conductive layers and separated by insulating layers.
  • The insulating layers are made of inorganic or organic insulators. Organic insulators have a transmittance higher than the inorganic insulators, and therefore often result in increased luminance (and an increased reference viewing angle for an LCD). Several of these organic insulators have a photosensitivity level that allows them to be patterned only by lithography without etching, thereby simplifying the display manufacturing process.
  • However, conventional photosensitive organic insulating layers often have spots or stains. In particular, as the display devices increase in size, slit coating or spin-and-slit coating is preferred to spin coating as a method of forming the organic insulating layers, and the slit coating and the spin-and-slit coating of the organic insulating layers frequently generate stains. The stains may be horizontal stains along a direction of a slit type nozzle of a coating device, vertical stains along a length direction of the slit type nozzle, and irregular spots over an entire surface of a substrate. In addition, portions of the organic layer near the edges of a substrate are sometimes thicker than other portions of the organic layer. These portions with extra thickness may not completely dissolve during the development such that they remain to form stains, degrading the image quality of the display device.
  • A method and device for forming organic insulating layers with fewer stains is desired.
  • SUMMARY OF THE INVENTION
  • In one aspect, the invention is a photosensitive resin composition that includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes:
  • an organic fluorine compound having the structure
    Figure US20070254221A1-20071101-C00004

    where Rf is a chained or branched perfluoroalkylene group including about 5-10 carbon atoms and Z is a hydrogen or a fluorine;
  • a first silicone compound having the structure
    Figure US20070254221A1-20071101-C00005

    where R is a chained or branched alkylene group including about 2-5 carbon atoms and each of x and y is an integer of about 1-20; and
  • a second silicone compound having the structure
    Figure US20070254221A1-20071101-C00006
  • where R′ is an alkyl group including about 1-20 carbon atoms or a chained or branched carbonyl alkyl group including about 2-21 carbon atoms and each of v and w is an integer of about 1-20, and each of m and 1 is an integer of about 1-9 wherein (m+1) lies between 2 and 10.
  • In another aspect, the invention is a thin film panel including: a substrate; a thin film pattern formed on the substrate; and an insulating layer formed on the thin film pattern and made from a photosensitive resin composition including an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes:
  • an organic fluorine compound having the structure
    Figure US20070254221A1-20071101-C00007

    where Rf is a chained or branched perfluoroalkylene group including about 5-10 carbon atoms and Z is a hydrogen or a fluorine;
  • a first silicone compound having the structure
    Figure US20070254221A1-20071101-C00008

    where R is a chained or branched alkylene group including about 2-5 carbon atoms and each of x and y is an integer of about 1-20; and
  • a second silicone compound having the structure
    Figure US20070254221A1-20071101-C00009

    where R′ is an alkyl group including about 1-20 carbon atoms or a chained or branched carbonyl alkyl group including about 2-21 carbon atoms and each of v and w is an integer of about 1-20, and each of m and 1 is an integer of about 1-9 wherein (m+1) lies between 2 and 10.
  • In yet another aspect, the invention is a method of manufacturing a thin film panel. The method includes: forming a thin film pattern on a substrate; coating a photosensitive resin composition including an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent; performing a light exposure on the photosensitive resin composition; and developing the photosensitive resin composition. The surfactant includes:
  • an organic fluorine compound having the structure
    Figure US20070254221A1-20071101-C00010

    where Rf is a chained or branched perfluoroalkylene group including about 5-10 carbon atoms and Z is a hydrogen or a fluorine;
  • a first silicone compound having the structure
    Figure US20070254221A1-20071101-C00011

    where R is a chained or branched alkylene group including about 2-5 carbon atoms and each of x and y is an integer of about 1-20; and
  • a second silicone compound having the structure
    Figure US20070254221A1-20071101-C00012

    where R′ is an alkyl group including about 1-20 carbon atoms or a chained or branched carbonyl alkyl group including about 2-21 carbon atoms and each of v and w is an integer of about 1-20, and each of m and 1 is an integer of about 1-9 wherein (m+1) lies between 2 and 10.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The present invention will become more apparent by describing embodiments thereof in detail with reference to the accompanying drawing in which:
  • FIG. 1 is a layout view of a TFT array panel according to an embodiment of the present invention;
  • FIG. 2 is a sectional view of the TFT array panel shown in FIG. 1 taken along the line II-II′;
  • FIGS. 3A, 4A, 5A and 6A are layout views of the TFT array panel shown FIGS. 1 and 2 in intermediate steps of a manufacturing method thereof according to an embodiment of the present invention;
  • FIG. 3B is a sectional view of the TFT array panel shown in FIG. 3A taken along the line IIIB-IIIB′;
  • FIG. 4B is a sectional view of the TFT array panel shown in FIG. 4A taken along the line IVB-IVB′;
  • FIG. 5B is a sectional view of the TFT array panel shown in FIG. 5A taken along the line VB-VB′;
  • FIG. 6B is a sectional view of the TFT array panel shown in FIG. 6A taken along the line VIB-VIB′;
  • FIG. 7 is a layout view of a TFT array panel according to another embodiment of the present invention;
  • FIG. 8 is a sectional view of the TFT array panel shown in FIG. 7 taken along the line VIII-VIII′;
  • FIGS. 9A and 10A are layout views of the TFT array panel shown FIGS. 7 and 8 in intermediate steps of a manufacturing method thereof according to an embodiment of the present invention;
  • FIG. 9B is a sectional view of the TFT array panel shown in FIG. 9A taken along the line IXB-IXB′;
  • FIG. 10B is a sectional view of the TFT array panel shown in FIG. 9A taken along the line XB-XB′; and
  • FIGS. 11A-11F are photographs illustrating photosensitive resin films according to examples of the present invention and comparative examples.
  • DETAILED DESCRIPTION OF EMBODIMENTS
  • The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
  • A photosensitive resin composition according to the present invention includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent.
  • The alkali-soluble resin may include a curable copolymer that includes a compound (a1) derived from an unsaturated carboxylic acid and a compound (a2) derived from an unsaturated compound including a cross-linking group, which is not an unsaturated carboxylic acid.
  • The unsaturated carboxylic acid in the compound (a1) may include a molecule including one or more carboxyl groups and examples of the unsaturated carboxylic acid include an unsaturated monocarboxylic acid and an unsaturated dicarboxylic acid. The unsaturated carboxylic acid may be selected from an acrylic acid, a methacrylic acid, a crotonic acid, an itaconic acid, a maleic acid, a fumaric acid, a citraconic acid, a mesaconic acid, and a cinnamic acid.
  • The compound (a2) may include an unsaturated compound including an epoxy group or preferably an oxetanyl group.
  • Examples of the unsaturated compound including an epoxy group include a glyddyl(meth)acrylate, a β-methyl glycidyl(meth)acrylate, a β-methyl glycidyl (meth)acrylate, a 3-methyl-3,4-epoxy butyl(meth)acrylate, a 3-ethyl-3,4-epoxybutyl (meth)acrylate, a 4-methyl-4,5-epoxy pentyl(meth)acrylate, a 2,3-poxy cyclohexyl methyl(meth)acrylate, a 3,4-epoxy cyclohexyl methyl(meth)acrylate, an o-vinyl benzyl glycidyl ether, an m-vinyl benzyl glycidyl ether, a p-vinyl benzyl glycidyl ether, a 1-vinyl cyclohexene oxide, a 3-vinyl cyclohexene oxide, and a 4-vinyl cyclohexene oxide.
  • Examples of the unsaturated compound including an oxetanyl group include a 3-(meth)acryloyloxymethyl oxetane, a 3-methyl-3-(meth)acryloyloxymethyl oxetane, a 3-ethyl-3-(meth)acryloyloxymethyl oxetane, a 2-phenyl-3-(meth)acryloyloxymethyl oxetane, a 2-trifluoromethyl-3-(meth)acryloyloxymethyl oxetane, a 2-pentafluoroethyl-3-(meth)acryloyloxymethyl oxetane, a 3-methyl-3-(meth)acryloyloxyethyl oxetane, a 3-methyl-3-(meth)acryloyloxyethyl oxetane, a 2-phenyl-3-(meth)acryloyloxyethyl oxetane, a 2-trifluoromethyl-3-(meth)acryloyloxyethyl oxetane, and a 2-pentafluoroethyl-3-(meth)acryloyloxyethyl oxetane. Among the above-described oxetanes, the 3-ethyl-3-(meth)acryloyloxymethyl oxetane is preferable.
  • The photosensitive resin composition including the oxetanyl group is advantageous for storage of the photosensitive resin composition.
  • The curable copolymer may further include a compound (a3) that includes at least one of: a compound (a31) derived from a carboxylic acid ester having an olefinic double bond; an compound (a32) derived from an aromatic compound having a polymerizable, unsaturated carbon-to-carbon bond; a compound (a33) derived from a vinyl cyanide; and a compound (a34) derived from an N-substituted maleimide.
  • An example of the carboxylic acid ester having an olefinic double bond and deriving the compound (a31) includes a compound derived from: an unsaturated carboxylic acid ester such as a methyl(meth)acrylate, an ethyl(meth)acrylate, a butyl (meth)acrylate, a 2-hydroxyethyl(meth)acrylate, a benzyl(meth)acrylate, a cyclohexyl (meth)acrylate, an isobornyl(meth)acrylate or a dicyclopentanyl(meth)acrylate, phenyl(meth)acrylate, a diethyl maleate, a diethyl fumarate, and a diethyl itaconate; an unsaturated carboxylic acid aminoalkyl ester such as an aminoethyl(meth)acrylate; and a vinyl ester such as a vinyl acetate and a vinyl propionate.
  • Examples of the aromatic compound having a polymerizable, unsaturated carbon-to-carbon bond and generating the compound (a32) include a styrene, an α-methyl styrene, and a vinyl toluene.
  • An example of the vinyl cyanide from which the compound (a33) is derived includes a compound derived from a vinyl cyanide such as an acrylonitrile, a methacrylonitrile, and an α-chloro(meth)acrylonitrile.
  • Examples of the N-substituted maleimide deriving the compound (a34) include an N-methyl maleimide, an N-ethyl maleimide, an N-butyl maleimide, an N-cyclohexyl maleimide, an N-benzyl maleimide, an N-phenyl maleimide, an N-(4-acetylphenyl)maleimide, an N-(2,6-diethylphenyl)maleimide, an N-(4-dimethylamino-3,5-dinitrophenyl)maleimide, an N-succinimidyl-3-maleimide benzoate, an N-succinimidyl-3-maleimide propionate, an N-succinimidyl-maleimide butylate, an N-succinimidyl-6-maleimide caproate, an N-(1-anilinonaphthyl)-4-maleimide, an N-[4-(2-benzoxazolyl)phenyl]maleimide, and an N-(9-acridinyl)maleimide.
  • Each of the compounds (a1), (a2), (a31), (a32), (a33) and (a34) may include one or more compounds derived from the above-described compounds.
  • In the copolymer including the compound (a1) derived from the unsaturated carboxylic acid and the compound (a2) derived from the unsaturated compound including the cross-linking group, the content of the compound (a1) is equal to preferably about 5-50 mol % and more preferably about 15-40 mol % of the copolymer, and the content of the compound (a2) is equal to about 5-95 mol % and more preferably about 15-85 mol % of the copolymer.
  • The photosensitive resin composition including the copolymer that includes the compounds (a1) and (a2) in the amounts described above has an appropriate resolution speed for a developer and has a high curability.
  • In the copolymer further including the compound (a3) as well as the compounds (a1) and (a2), the content of the compound (a3) in the copolymer is equal to preferably about 0.01-90 mol % and more preferably about 0.01-80 mol %.
  • The copolymer may be formed by, for example:
  • (1) solution polymerization at about 60-300° C. that mixes monomers and a polymerization initiator in an organic solvent with or without a chain transfer agent as described in J. Polym. Sci., Polym. Chem. (1968), 6(2), pp. 257-267;
  • (2) suspension or emulsion polymerization at about 60-300° C. using a solvent that does not dissolve monomers as described in J. Polym. Sci., Polym. Chem.(1983), 21(10), pp. 2949-2960;
  • (3) bulk polymerization at about 60-200° C. as described in Japanese Patent Application Publication No. Hei 6-80735; and
  • (4) successively supplying monomers into polymerization chamber, heating the monomers at about 180-300° C. for about 5-60 minutes with or without a polymerization initiator, and extracting reaction products out of the chamber as described in Japanese Patent Application Publication No. 10-195111.
  • In addition, the copolymer may be obtained by mixing and reacting monomers, polymerization initiators, and an organic solvent. This may be done by successively supplying monomers in an organic solvent with an additive polymerization initiator, and by successively adding monomers and an initiator to an organic solvent. In order to dissipate the heat of reaction, it is preferable to supply the monomers successively as opposed to all at once. In order to obtain polymer compounds having a narrow molecular weight distribution, it is preferable to successively supply the polymerization initiator.
  • The reaction is performed for preferably about 1 to about 20 hours, and more preferably for about 2 to about 10 hours at a temperature preferably of about 40 to about 200° C., more preferably of about 50 to about 150° C., and most preferably of about 60 to about 120° C. When the monomers are successively supplied, it is preferable that the monomers are supplied for about 1 to about 5 hours and continuously heated for about 1 to about 10 hours. In this case, the reaction concentration, i.e., the weight percentage of the monomers in the total reaction solution, is preferably about 10 to about 70%, and more preferably about 20 to about 60%.
  • Examples of the organic solvent include:
  • alcohols such as a methanol, an ethanol, a propanol, a butanol, a pentanol, a hexanol, cyclohexanol;
  • ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, diisobutyl ketone, cyclopentanone, and cyclohexanone;
  • ethers such as ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol dipropyl ether, ethylene glycol dibutyl ether, ethylene glycol ethyl methyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl ether, diethylene glycol ethyl methyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, 3-methoxy-1-butanol, 3-methyl-3-methoxy-1-butanol;
  • esters such as ethyl acetate, butyl acetate, amyl acetate, methyl lactate, ethyl lactate, butyl lactate, 3-methoxy butyl acetate, 3-methyl-3-methoxy-1-butyl acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, 1,3-propanediol diacetate, ethyl 3-ethoxy propionate, methyl 3-methoxy propionate, methyl 2-hydroxy isobutanate, ethylene carbonate, propylene carbonate, and butyrolactone); and
  • aromatic hydrocarbons such as toluene and xylene.
  • The solvent may include two or more of the above-described compounds.
  • Examples of the copolymer including the compounds (a1) and (a2) include 3-ethyl-3-methacryloyloxymethyl oxetane/benzyl methacrylate/methacrylate copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/benzyl methacrylate/methacrylate/styrene copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/styrene copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/cyclohexyl methacrylate copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/methyl methacrylate copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/methyl methacrylate/styrene copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/t-butyl methacrylate copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/isobornyl methacrylate copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/benzyl acetate copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/cyclohexyl acrylate copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/isobornyl acrylate copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/dicyclopentanyl methacrylate copolymer, or 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/t-butyl acrylate copolymer, 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/phenyl maleimide copolymer, and 3-ethyl-3-methacryloyloxymethyl oxetane/methacrylate/cyclohexyl maleimide copolymer.
  • The average molecular weight of the copolymer including the compounds (a1) and (a2) determined by gel permeation chromatography (GPC) using a polystyrene standard is preferably from about 2,000 to about 100,000, more preferably from about 2,000 to about 50,000, and most preferably from about 3,000 to about 20,000. When the average molecular weight is in the above-described range, the development speed is increased with maintaining the insoluble fraction.
  • The content of the copolymer including the compounds (a1) and (a2) is preferably from about 50 to about 98 wt. %, and more preferably from about 60 to about 95 wt. % relative to the solid content of the photosensitive resin composition. The lower limit of 50 wt. % is the lowest content for maintaining the photosensitive characteristic, and the upper limit of 98 wt. % is determined in consideration of the lowest amount of other moieties including the quinone diazide and the surfactant.
  • The quinone diazide in the photosensitive resin composition may be selected from 1,2-benzoquinonediazide sulfonate ester, 1,2-naphthoquinonediazide sulfonate ester, 1,2-benzoquinonediazide sulfonate amide, and 1,2-naphthoquinonediazide sulfonate amide.
  • Examples of the quinone diazide include:
    • 1,2-naphthoquinone diazide sulfonate esters of trihydroxybenzophenone such as 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonate ester, 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate ester, 2,4,6-trihydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonate ester, and 2,4,6-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate ester;
    • 1,2-naphthoquinone diazide sulfonate esters of tetrahydroxybenzophenone such as
    • 2,2′,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonate ester, 2,2′,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate ester, 2,2′,4,3′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonate ester, 2,2′,4,3′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate ester, 2,3,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonate ester, 2,3,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate ester, 2,3,4,2′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-sulfonate ester, 2,3,4,2′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate ester, 2,3,4,4′-tetrahydroxy-3′-methoxybenzophenone-1,2-naphthoquinonediazide-4-sulfonate ester, and
    • 2,3,4,4′-tetrahydroxy-3′-methoxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate ester;
    • 1,2-naphthoquinone diazide sulfonate esters of pentahydroxybenzophenone such as 2,3,4,2′,6′-pentahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonate ester and
    • 2,3,4,2′,6′-pentahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate ester;
    • 1,2-naphthoquinone diazide sulfonate esters of hexahydroxybenzophenone such as
    • 2,4,6,3′,4′,5′-hexahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonate ester, 2,4,6,3′,4′,5′-hexahydroxybenzophenone-1,2-naphthoquinonediazide sulfonate ester, 3,4,5,3′,4′,5′-hexahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonate ester, and 3,4,5,3′,4′,5-hexahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate ester;
    • 1,2-naphthoquinone diazide sulfonate esters of (polyhydroxyphenyl)alkane such as bis(2,4-dihydroxyphenyl)methane-1,2-naphthoquinonediazide-4-sulfonate ester, bis(2,4-dihydroxyphenyl)methane-1,2-naphthoquinonediazide-5-sulfonate ester, bis(p-hydroxyphenyl)methane-1,2-naphthoquinonediazide-4-sulfonate ester, bis(p-hydroxyphenyl)methane-1,2-naphthoquinonediazide-5-sulfonate ester, 1,1,1-tri(p-hydroxyphenyl)ethane-1,2-naphthoquinonediazide-4-sulfonate ester, 1,1,1-tri(p-hydroxyphenyl)ethane-1,2-naphthoquinonediazide-5-sulfonate ester, bis(2,3,4-trihydroxyphenyl)methane-1,2-naphthoquinonediazide-4-sulfonate ester, bis(2,3,4-trihydroxyphenyl)methane-1,2-naphthoquinonediazide-5-sulfonate ester, 2,2′-bis(2,3,4-trihydroxyphenyl)propane-1,2-naphthoquinonediazide-4-sulfonate ester, 2,2′-bis(2,3,4-trihydroxyphenyl)propane-1,2-naphthoquinonediazide-5-sulfonate ester, 1,1,3-tris(2,5-dimethyl-4-hydroxyphenyl)-3-phenylpropane-1,2-naphthoquinonediazide-4-sulfonate ester,
    • 1,1,3-tris(2,5-dimethyl hydroxyphenyl)-3-phenylpropane-1,2-naphthoquinonediazide-5-sulfonate ester,
    • 4,4′-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene])bisphenol-1,2-naphthoquinonediazide-5-sulfonate ester,
    • bis(2,5-dimethyl-4-hydroxyphenyl)-2-hydroxyphenylmete-1,2-naphthoquinonediazide-4-sulfonate ester,
    • bis(2,5-dimethyl-4-hydroxyphenyl)-2-hydroxyphenylmethane-1,2-naphthoquinonediazide-5-sulfonate ester,
    • 3,3,3′,3′-tetramethyl-1,1′-spirobindene-5,6,7,5′,6′,7′-hexanol-1,2-naphthoquinonediazide-4-sulfonate ester,
    • 3,3,3′,3′-tetramethyl-1,1′-spirobindene-5,6,7,5′,6′,7′-hexanol-1,2-naphthoquinonediazide-5-sulfonate ester,
    • 2,2,4-trimethyl-7,2′,4′-trihydroxyflavan-1,2-naphthoquinonediazide-sulfonate ester, and 2,2,4-trimethyl-7,2′,4′-trihydroxyflavan-1,2-naphthoquinonediazide-5-sulfonate ester.
  • The photosensitive resin composition may include two or more of the above-described quinone diazides.
  • The content of the quinone diazide is preferably from about 1.7 to about 50 wt. %, and more preferably from about 5 to about 40 wt. % relative to the solid content of the photosensitive resin composition. In this case, the difference in the resolution speed between exposed portions and unexposed portions of the photosensitive resin composition becomes large to increase the insoluble fraction. On the contrary, when the weight percentage of the quinone diazide is less than 1.7 wt. % or greater than 50 wt. %, the contrast is degraded.
  • Examples of the solvent include:
  • ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol monoisopropyl ether, ethylene glycol mono-n-butyl ether, ethylene glycol mono-sec-butyl ether, ethylene glycol mono-tert-butyl ether, ethylene glycol mono-n-pentyl ether, ethylene glycol mono-n-hexyl ether, ethylene glycol mono-n-heptyl ether, and ethylene glycol mono-n-octyl ether;
  • diethylene glycol dialkyl ethers such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol di-n-propyl ether, diethylene glycol diisopropyl ether, diethylene glycol di-n-butyl ether, diethylene glycol di-sec-butyl ether, diethylene glycol di-tert-butyl ether, diethylene glycol di-n-pentyl ether, diethylene glycol methyl ethyl ether, diethylene glycol methyl n-propyl ether, diethylene glycol methyl isopropyl ether, diethylene glycol methyl n-butyl ether, diethylene glycol methyl sec-butyl ether, diethylene glycol methyl tert-butyl ether, diethylene glycol methyl n-pentyl ether, diethylene glycol ethyl n-propyl ether, diethylene glycol ethyl isopropyl ether, diethylene glycol ethyl n-butyl ether, diethylene glycol ethyl sec-butyl ether, diethylene glycol ethyl tert-butyl ether, diethylene glycol ethyl n-pentyl ether, diethylene glycol n-propyl isopropyl ether, diethylene glycol n-propyl n-butyl ether, diethylene glycol n-propyl sec-butyl ether, diethylene glycol n-propyl tert-butyl ether, diethylene glycol n-propyl n-pentyl ether, diethylene glycol isopropyl n-butyl ether, diethylene glycol isopropyl sec-butyl ether, diethylene glycol isopropyl tert-butyl ether, diethylene glycol isopropyl n-pentyl ether, diethylene glycol n-butyl sec-butyl ether, diethylene glycol n-butyl tert-butyl ether, diethylene glycol n-butyl n-pentyl ether, and diethylene glycol sec-butyl tert-butyl ether, and diethylene glycol sec-butyl n-pentyl ether;
  • ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate;
  • propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, dipropylene glycol monomethyl ether acetate, and dipropylene glycol monoethyl ether acetate;
  • aromatic hydrocarbons such as benzene, toluene, xylene, and mesitylene;
  • ketones such as methyl ethyl ketone, acetone, methyl amyl ketone, methyl isobutyl ketone, and cyclohexanone;
  • alcohols such as ethanol, propanol, butanol, hexanol, cyclohexanol, ethylene glycol, and glycerin; and
  • esters such as methyl 3-ethoxy propionate, methyl 3-methoxy propionate, methyl 2-hydroxy isobutanate, ethyl lactate, butyl lactate, butyl acetate, amyl acetate, methylpyrophosphate, and 1,3-butanediol diacetate.
  • Two or more of the above-listed materials may be used as the solvent.
  • Among the above-listed solvents, preferred are diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, ethyl 3-ethoxy propionate, ethyl lactate, butyl lactate, butyl acetate, and combinations thereof.
  • Examples of a preferable combination include: diethylene glycol dimethyl ether and ethyl 3-ethoxy propionate; diethylene glycol dimethyl ether and ethyl lactate; diethylene glycol dimethyl ether and butyl lactate; diethylene glycol dimethyl ether and butyl acetate; diethylene glycol diethyl ether and ethyl 3-ethoxy propionate; diethylene glycol diethyl ether and butyl lactate; diethylene glycol diethyl ether and butyl lactate; diethylene glycol diethyl ether and butyl acetate; diethylene glycol methyl ethyl ether and ethyl 3-ethoxy propionate; diethylene glycol methyl ethyl ether and ethyl lactate; diethylene glycol methyl ethyl ether and butyl lactate; diethylene glycol methyl ethyl ether and butyl acetate; ethyl 3-ethoxy propionate and ethyl lactate; ethyl 3-ethoxy propionate and butyl lactate; and ethyl 3-ethoxy propionate and butyl acetate. Examples of a more preferable combination include: diethylene glycol methyl ethyl ether, ethyl 3-ethoxy propionate, and butyl lactate; and diethylene glycol methyl ethyl ether, ethyl 3-ethoxy propionate, and butyl acetate, and a combination of diethylene glycol methyl ethyl ether, ethyl 3-ethoxy propionate, butyl lactate, and butyl acetate is most preferable.
  • The content of the solvent is preferably about 50 to about 95 wt. %, and more preferably about 70 to about 90 wt. % relative to the total content of the photosensitive resin composition. In addition, the content of the solvent used in a coating device having a slit-type nozzles is preferably about 75 wt. % to about 90 wt. % relative to the total content of the photosensitive resin composition. Furthermore, the content of the solvent used in a coating device performing spin coating as well as slit coating is preferably about 65 to about 80 wt. % relative to the total content of the photosensitive resin composition. In this case, the photosensitive resin composition can form a film having reduced stains.
  • The surfactant includes:
  • an organic fluorine compound of
    Figure US20070254221A1-20071101-C00013

    where Rf is a chained or branched perfluoroalkylene group including about 5-10 carbon atoms and Z is a hydrogen or a fluorine;
  • a first silicone compound of
    Figure US20070254221A1-20071101-C00014
  • where R is a chained or branched alkylene group including about 2-5 carbon atoms and each of x and y is an integer of about 1-20; and a second silicone compound of
    Figure US20070254221A1-20071101-C00015

    where R′ is an alkyl group including about 1-20 carbon atoms or a chained or branched carbonyl alkyl group including about 2-21 carbon atoms and each of v and w is an integer of about 1-20, and each of m and 1 is an integer of about 1-9 wherein (m+1) lies between 2 and 10.
  • Examples of Rf of the organic fluorine compound include perfluoro n-pentylene group, perfluoro n-hexylene group, perfluoro n-heptylene group, perfluoro n-octylene group, perfluoro n-nonylene group, perfluoro n-decylene group, and perfluoro 2-ethylhexylene group. Among the above-described perfluoroalkylene groups, perfluoro n-hexylene group, perfluoro n-octylene group, and perfluoro n-decylene group are preferred.
  • Examples of the organic fluorine compound include 3-perfluorohexyl-1,2-epoxypropane, 3-perfluorooctyl-1,2-epoxypropane, and 3-perfluorodecyl-1,2-epoxypropane. Among the above-listed examples, 3-perfluorooctyl-1,2-epoxypropane is preferred.
  • The content of the organic fluorine compound is preferably from about 1 to about 1,000 ppm, more preferably from about 10 to about 500 ppm, and most preferably from about 50 to about 300 ppm relative to the total content of the photosensitive resin composition. In this case, the photosensitive resin composition can form a film having reduced stains.
  • The content of the organic fluorine compound is preferably from about 10 to about 50 wt. % relative to the total content of the organic fluorine compound and the silicone compounds.
  • Examples of R in the chemical formulae 2 and 3 include ethylene group, n-propylene group, n-butylene group, pentamethylene group, isopropylene group, 2-methyl n-propylene group, 3-methyl n-propylene group, 2,2-dimethyl n-propylene group, 2-methyl n-butylene group, and 3-methyl n-butylene group. Among the above-listed groups, ethylene group, n-propylene group, and isopropylene group are preferred.
  • The integer x in chemical formula 2 ranges preferably from two to six, and the integer y ranges preferably from 5 to 10.
  • Any combination of x and y in the above-described ranges can be selected and any combination of x and y range in the above-described preferable ranges is preferred.
  • An example of the first silicone compound having chemical formula 2 includes a reaction product between methyl hydro bis(trimethyl siloxy)silane and polyalkylene glycol monoallyl ether preferably having a molecular weight from about 200 to about 500.
  • The content of the first silicone compound is preferably from about 1 to about 1,000 ppm (i.e., from about 1×10−4 to about 0.1 wt. %), more preferably from about 10 to about 500 ppm (i.e., from about 1×10−4 to about 0.05 wt. %), and most preferably from about 50 to about 300 ppm (i.e., from about 5×10−3 to about 0.03 wt. %) relative to the total content of the photosensitive resin composition, such that a film made of the photosensitive resin composition has reduced stains. In addition, the weight percentage of the first silicone compound in the surfactant is preferably from about 10 to about 50 wt. %.
  • Examples of R′ in chemical formula 3 include methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-dodecyl group, n-undecyl group, n-tetradecyl group, n-hexadecyl group, n-octadecyl group, isopropyl group, sec-butyl group, tert-butyl group, 2-methyl hexyl group, carbonyl methyl group, carbonyl ethyl group, carbonyl n-propyl group, carbonyl n-butyl group, carbonyl n-pentyl group, carbonyl n-hexyl group, carbonyl n-heptyl group, carbonyl n-octyl group, carbonyl n-nonyl group, carbonyl n-decyl group, carbonyl n-dodecyl group, carbonyl n-undecyl group, carbonyl n-tetradecyl group, carbonyl n-hexadecyl group, carbonyl n-octadecyl group, carbonyl isopropyl group, carbonyl sec-butyl group, carbonyl tert-butyl group, and carbonyl 2-methylhexyl group. Among the above-listed groups, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-octyl group, n-decyl group, n-undecyl group, n-tetradecyl group, n-hexadecyl group, n-octadecyl group, isopropyl group, sec-butyl group, tert-butyl group, 2-methyl hexyl group, carbonyl methyl group, carbonyl ethyl group, carbonyl n-propyl group, carbonyl n-butyl group, carbonyl n-hexyl group, carbonyl n-octyl group, carbonyl n-decyl group, carbonyl n-undecyl group, carbonyl n-tetradecyl group, carbonyl n-hexadecyl group, carbonyl n-octadecyl group, carbonyl isopropyl group, carbonyl sec-butyl group, carbonyl tert-butyl group, and carbonyl 2-methylhexyl group.
  • The integer v ranges preferably from two to six, and the integer w ranges preferably from five to ten.
  • Any combination of v and w in the above-described ranges can be selected and any combination of v and w range in the above-described preferable ranges is preferred.
  • The integer m ranges preferably from one to ten, and the integer 1 ranges preferably from one to ten.
  • Any combination of m and 1 in the above-described ranges can be selected and any combination of m and 1 range in the above-described preferable ranges is preferred.
  • An example of the second silicone compound includes a reaction product between trimethylsilyl terminated-(dimethylsiloxane-methylhydrosiloxane) copolymer and carboxylic acid ester of polyalkylene glycol allyl alkyl ether or polyalkylene glycol allyl ether, and preferably includes a reaction product between trimethylsilyl terminated-(dimethylsiloxane-methylhydrosiloxane) copolymer and carboxylic acid ester of polyethylene glycol allyl alkyl ether and polyethylene glycol allyl ether.
  • The second silicone compound is preferably from about 1 to about 1,000 ppm (i.e., from about 1×10−4 to about 0.1 wt. %), more preferably from about 10 to about 500 ppm (i.e., from about 1×10−4 to about 0.05 wt. %), and most preferably from about 50 to about 300 ppm (i.e., from about 5×10−3 to about 0.03 wt. %) relative to the total content of the photosensitive resin composition, such that a film made of the photosensitive resin composition has reduced stains. In addition, the weight percentage of the second silicone compound in the surfactant is preferably about 10 to about 50 wt. %.
  • The surfactant in the photosensitive resin is preferably present in an amount of about 3 to about 3,000 ppm (i.e., from about 3×10−4 to about 0.3 wt. %). When the amount of the surfactant is less than about 3 ppm, the surfactant may not serve its intended function. Conversely, when the amount of the surfactant is more than about 3,000 ppm, the surfactant may affect the photosensitive characteristics of the resin. To achieve the desired level of solubility and photosensitivity, the amount of the surfactant is more preferably about 5 to about 800 ppm (i.e., from about 5×10−4 to about 0.08 wt. %), and most preferably about 10 to about 800 ppm (i.e., from about 1×10−3 to about 0.8 wt. %). A film made of the photosensitive resin composition having the above-described amount of the surfactant has reduced stains.
  • The surfactant in the photosensitive resin composition improves the solubility of solid ingredients such as the alkali-soluble resin and the quinone diazide in the solvent to make the photosensitive resin composition deposit uniformly.
  • The photosensitive resin composition may further include a cationic polymerization initiator, a polyphenol, a cross-linking agent, a polymerizable monomer, and a silane coupling agent as well as the alkali-soluble resin, the quinone diazide, the surfactant, and the solvent.
  • An example of the cationic polymerization initiator includes an onium salt that can initiate the cationic polymerization. The onium salt includes an onium cation and a Lewis acid anion.
  • Examples of the onium cation include diphenyl iodonium, bis(p-tolyl)iodonium, bis(p-t-butylphenyl)iodonium, bis(p-octylphenyl)iodonium, bis(p-octacecylphenyl)iodonium, bis(p-octyloxyphenyl)iodonium, bis(p-octadecyloxyphenyl)iodonium, phenyl(p-octadecyloxyphenyl)iodonium, p-tolyl)(p-isopropyl phenyl)iodonium, triphenyl sulfonate, tris(p-tolyl)sulfonate, tris(p-isopropyl phenyl)sulfonate, tris(2,6-dimethyl phenyl)sulfonate, tris(p-t-butylphenyl)sulfonate, tris(p-cyanophenyl)sulfonate, tris(p-chlorophenyl)sulfonate, dimethyl(methoxy)sulfonate, dimethyl(ethoxy)sulfonate, dimethyl(propoxy)sulfonate, dimethyl(butoxy)sulfonate, dimethyl(octyloxy)sulfonate, dimethyl(octadecanoxy)sulfonate, dimethyl(isopropoxy)sulfonate, dimethyl(t-butoxy)sulfonate, dimethyl(cyclopentyloxy)sulfonate, dimethyl(cyclohexyloxy)sulfonate, dimethyl(fluoromethoxy)sulfonate, dimethyl(2-chloroethoxy)sulfonate, dimethyl(3-bromopropoxy)sulfonate, dimethyl(4-cyanobutoxy)sulfonate, dimethyl(8-nitrooctyloxy)sulfonate, dimethyl(18-trifluoromethyloctadecanoxy)sulfonate, dimethyl(2-hydroxy isopropoxy)sulfonate, and dimethyl(tris(trichloromethyl)methyl)sulfonate. Among the above-listed onium cations, bis(p-tolyl)iodonium, p-tolyl)(p-isopropyl phenyl) iodonium, bis(p-t-butylphenyl)iodonium, triphenyl sulfonate, and tris(p-t-butylphenyl)sulfonate are preferred.
  • Examples of the Lewis acid anions include hexafluoro phosphate and hexafluoro arsenate, and preferably include hexafluoro antimonate and tetrakis(pentafluorophenyl)borate.
  • Any combination of the above-listed onium cations and Lewis acid anions can be employed.
  • Examples of the cationic polymerization initiator include diphenyliodonium hexafluorophosphate, bis(p-tolyl)iodonium hexafluorophosphate, bis(p-t-butylphenyl)iodonium hexafluorophosphate, bis(p-octylphenyl)iodonium hexafluorophosphate, bis(p-octacecylphenyl)iodonium hexafluorophosphate, bis(p-octyloxyphenyl)iodonium hexafluorophosphate, bis(p-octadecyloxyphenyl)iodonium hexafluorophosphate, phenyl(p-octadecyloxyphenyl)iodonium hexafluorophosphate, p-tolyl)(p-isopropyl phenyl)iodonium hexafluorophosphate, methyl naphthyl iodonium hexafluorophosphate, ethyl naphthyl iodonium hexafluorophosphate, triphenyl sulfonate hexafluoro phosphate, tris(p-tolyl)sulfonate hexafluoro phosphate, tris(p-isopropyl phenyl)sulfonate hexafluoro phosphate, tris(2,6-dimethyl phenyl)sulfonate hexafluoro phosphate, tris(p-t-butyl phenyl)sulfonate hexafluoro phosphate, tris(p-cyanophenyl)sulfonate hexafluoro phosphate, tris(p-chlorophenyl)sulfonate hexafluoro phosphate, dimethyl naphthyl sulfonate hexafluoro phosphate, diethyl naphthyl sulfonate hexafluoro phosphate, dimethyl(methoxy) sulfonate hexafluoro phosphate, dimethyl ethoxy sulfonate hexafluoro phosphate, dimethyl(propoxy) sulfonate hexafluoro phosphate, dimethyl (butoxy) sulfonate hexafluoro phosphate, dimethyl(octyloxy)sulfonate hexafluoro phosphate, dimethyl(octadecanoxy)sulfonate hexafluoro phosphate, dimethyl(isopropoxy)sulfonate hexafluoro phosphate, dimethyl(t-butoxy)sulfonate hexafluoro phosphate, dimethyl(cyclopentyloxy)sulfonate hexafluorophosphate, dimethyl(cyclohexyloxy)sulfonate hexafluorophosphate, dimethyl(fluoromethoxy)sulfonate hexafluorophosphate, dimethyl(2-chloroethoxy)sulfonate hexafluorophosphate, dimethyl(3-bromopropoxy)sulfonate hexafluorophosphate, dimethyl(4-cyanobutoxy)sulfonate hexafluorophosphate, dimethyl(8-nitrooctyloxy)sulfonate hexafluorophosphate, dimethyl(18-trifluoromethyloctadecanoxy)sulfonate hexafluorophosphate, dimethyl(2-hydroxyisopropoxy)sulfonate hexafluorophosphate, dimethyl(tris(trichloromethyl)methyl)sulfonate hexafluorophosphate, diphenyliodonium hexafluoroarsenate, bis(p-tolyl)iodonium hexafluoroarsenate, bis(p-octylphenyl)iodonium hexafluoroarsenate, bis(p-octadecylphenyl)iodonium hexafluoroarsenate, bis(p-octyloxyphenyl)iodonium hexafluoroarsenate, bis(p-octadecyloxyphenyl)iodonium hexafluoroarsenate, phenyl(p-octadecyloxyphenyl)iodonium hexafluoroarsenate, (p-tolyl)(p-isopropylphenyl)iodonium hexafluoroarsenate, methyl naphthyl iodonium hexafluoroarsenate, ethyl naphthyl iodonium hexafluoroarsenate, triphenyl sulphonate hexafluoroarsenate, tris(p-tolyl)sulphonate hexafluoroarsenate, tris(p-isopropylphenyl)sulphonate hexafluoroarsenate, tris(2,6-dimethylphenyl)sulphonate hexafluoroarsenate, tris(p-t-butylphenyl)sulphonate hexafluoroarsenate, tris(p-cyanophenyl)sulphonate hexafluoroarsenate, tris(p-chlorophenyl)sulphonate hexafluoroarsenate, dimethyl naphthyl sulphonate hexafluoroarsenate, diethyl naphthyl sulphonate hexafluoroarsenate, dimethyl(methoxy)sulphonate hexafluoroarsenate, dimethyl(ethoxy)sulphonate hexafluoroarsenate, dimethyl(propoxy)sulphonate hexafluoroarsenate, dimethyl(butoxy)sulphonate hexafluoroarsenate, dimethyl(octyloxy)sulphonate hexafluoroarsenate, dimethyl(octadecanoxy)sulphonate hexafluoroarsenate, dimethyl(isopropoxy)sulphonate hexafluoroarsenate, dimethyl(t-butoxy)sulphonate hexafluoroarsenate, dimethyl(cyclopentyloxy)sulphonate hexafluoroarsenate, dimethyl(cyclohexyloxy)sulphonate hexafluoroarsenate, dimethyl(fluoromethoxy)sulphonate hexafluoroarsenate, dimethyl(2-chloroethoxy)sulphonate hexafluoroarsenate, dimethyl(3-bromopropoxy)sulphonate hexafluoroarsenate, dimethyl(4-cyanobutoxy)sulphonate hexafluoroarsenate, dimethyl(8-nitrooctyloxy)sulphonate hexafluoroarsenate, dimethyl(18-trifluoromethyloctadecanoxy)sulphonate hexafluoroarsenate, dimethyl(2-hydroxyisopropoxy)sulphonate hexafluoroarsenate, dimethyl(tris(trichloromethyl)methyl)sulphonate hexafluoroarsenate, diphenyl iodonium hexafluoroantimonate, bis(p-tolyl)iodonium hexafluoroantimonate, bis(p-t-butylphenyl)iodonium hexafluoroantimonate, bis(p-octylphenyl)iodonium hexafluoroantimonate, bis(p-octadecylphenyl)iodonium hexafluoroantimonate, bis(p-octyloxyphenyl)iodonium hexafluoroantimonate, bis(p-octadecyloxyphenyl)iodonium hexafluoroantimonate, bis(p-octadecyloxyphenyl)iodonium hexafluoroantimonate, (p-tolyl)(p-isopropylphenyl)iodonium hexafluoroantimonate, methyl naphthyl iodonium hexafluoroantimonate, ethyl naphthyl iodonium hexafluoroantimonate, triphenyl sulfonate hexafluoroantimonate, tris(p-tolyl)sulfonate hexafluoroantimonate, tris(p-isopropylphenyl)sulfonate hexafluoroantimonate, tris(2,6-dimethylphenyl)sulfonate hexafluoroantimonate, tris(p-t-butylphenyl)sulfonate hexafluoroantimonate, tris(p-cyanophenyl)sulfonate hexafluoroantimonate, tris(p-chlorophenyl)sulfonate hexafluoroantimonate, dimethyl naphthyl sulfonate hexafluoroantimonate, diethyl naphthyl sulfonate hexafluoroantimonate, dimethyl(methoxy)sulfonate hexafluoroantimonate, dimethyl(ethoxy)sulfonate hexafluoroantimonate, dimethyl(propoxy)sulfonate hexafluoroantimonate, dimethyl(butoxy)sulfonate hexafluoroantimonate, dimethyl(octyloxy)sulfonate hexafluoroantimonate, dimethyl(octadecanoxy)sulfonate hexafluoroantimonate, dimethyl(isopropoxy)sulfonate hexafluoroantimonate, dimethyl(t-butoxy)sulfonate hexafluoroantimonate, dimethyl(cyclopentyloxy)sulfonate hexafluoroantimonate, dimethyl(cyclohexyloxy)sulfonate hexafluoroantimonate, dimethyl(fluoromethoxy)sulfonate hexafluoroantimonate, dimethyl(2-chloroethoxy)sulfonate hexafluoroantimonate, dimethyl(3-bromopropoxy)sulfonate hexafluoroantimonate, dimethyl(4-cyanobutoxy)sulfonate hexafluoroantimonate, dimethyl(8-nitrooctyloxy)sulfonate hexafluoroantimonate, dimethyl(18-trifluoromethyloctadecanoxy)sulfonate hexafluoroantimonate, dimethyl(2-hydroxyisopropoxy)sulfonate hexafluoroantimonate, dimethyl(tris(trichloromethyl)methyl)sulfonate hexafluoroantimonate, diphenyliodonium tetrakis(pentafluorophenyl)borate, bis(p-tolyl)iodonium tetrakis(pentafluorophenyl)borate, bis(p-t-butylphenyl)iodonium tetrakis(pentafluorophenyl)borate, bis(p-octylphenyl)iodonium tetrakis(pentafluorophenyl)borate, bis(p-octadecylphenyl)iodonium tetrakis(pentafluorophenyl)borate, bis(p-octyloxyphenyl)iodonium tetrakis(pentafluorophenyl)borate, bis(p-octadecyloxyphenyl)iodonium tetrakis(pentafluorophenyl)borate, phenyl(p-octadecyloxyphenyl)iodonium tetrakis(pentafluorophenyl)borate, (p-tolyl)(p-isopropylphenyl)iodonium tetrakis(pentafluorophenyl)borate, methyl naphthyl iodonium tetrakis(pentafluorophenyl)borate, ethyl naphthyl iodonium tetrakis(pentafluorophenyl)borate, triphenyl sulfonate tetrakis(pentafluorophenyl)borate, tri(p-tolyl)sulfonate tetrakis(pentafluorophenyl)borate, tris(p-isopropylphenyl)sulfonate tetrakis(pentafluorophenyl)borate, tris(2,6-dimethylphenyl)sulfonate tetrakis(pentafluorophenyl)borate, tris(p-t-butylphenyl)sulfonate tetrakis(pentafluorophenyl)borate, tris(p-cyanophenyl)sulfonate tetrakis(pentafluorophenyl)borate, tris(p-chlorophenyl)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl naphthyl sulfonate tetrakis(pentafluorophenyl)borate, diethyl naphthyl sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(methoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(ethoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(propoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(butoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(octyloxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(octadecanoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(isopropoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(t-butoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(cyclopentyloxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(cyclohexyloxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(fluoromethoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(2-chloroethoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(3-bromopropoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(4-cyanobutoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(8-nitrooctyloxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(18-trifluoromethyloctadecanoxy)sulfonate tetrakis(pentafluorophenyl)borate, dimethyl(2-hydroxyisopropoxy)sulfonate tetrakis(pentafluorophenyl)borate, and dimethyl(tris(trichloromethyl)methyl)sulfonate tetrakis(pentafluorophenyl)borate. Among the above-listed cationic polymerization initiators, preferred are bis(p-tolyl)iodonium hexafluorophosphate, (p-tolyl)(p-isopropylphenyl)iodonium hexafluorophosphate, bis(p-t-butylphenyl)iodonium hexafluorophosphate, triphenyl sulfonate hexafluorophosphate, tris(p-t-butylphenyl)sulfonate hexafluorophosphate, bis(p-tolyl)iodonium hexafluoroarsenate, (p-tolyl)(p-isopropylphenyl)iodonium hexafluoroarsenate, bis(p-t-butylphenyl)iodonium hexafluoroarsenate, triphenyl sulfonate hexafluoroarsenate, tris(p-t-butylphenyl) sulfonate hexafluoroarsenate, bis(p-tolyl)iodonium hexafluoroantimonate, (p-tolyl)(p-isopropylphenyl)iodonium hexafluoroantimonate, bis(p-t-butylphenyl)iodonium hexafluoroantimonate, trisphenyl sulfonate hexafluoroantimonate, tris(p-t-butylphenyl)sulfonate hexafluoroantimonate, bis(p-tolyl)iodonium tetrakis(pentafluorophenyl)borate, (p-tolyl)(p-isopropylphenyl)iodonium tetrakis(pentafluorophenyl)borate, bis(p-t-butylphenyl)iodonium tetrakis(pentafluorophenyl)borate, triphenyl sulfonate tetrakis(pentafluorophenyl)borate, and tris(p-t-butylphenyl)sulfonate tetrakis(pentafluorophenyl)borate, and more preferred are bis(p-tolyl)iodonium hexafluoroantimonate, (p-tolyl)(p-isopropylphenyl)iodonium hexafluoroantimonate, bis(p-t-butylphenyl)iodonium hexafluoroantimonate, trisphenyl sulfonate hexafluoroantimonate, tris(p-t-butylphenyl)sulfonate hexafluoroantimonate, bis(p-tolyl)iodonium tetrakis(pentafluorophenyl)borate, (p-tolyl)(p-isopropylphenyl)iodonium tetrakis(pentafluorophenyl)borate, bis(p-t-butylphenyl)iodonium tetrakis(pentafluorophenyl)borate, triphenyl sulfonate tetrakis(pentafluorophenyl)borate, and tris(p-t-butylphenyl)sulfonate tetrakis(pentafluorophenyl)borate.
  • The content of the cationic polymerization initiator is preferably from about 0.01 to about 10 wt. %, and more preferably from about 0.1 to about 5 wt. % relative to the total solid content of the photosensitive resin composition. The photosensitive resin composition including the polymerization initiator in the above-described range has increased thermal curing rate, the reduction of the resolution during the thermal curing is suppressed, and the cured film has increased solvent resistance.
  • The polyphenol includes a compound including molecules that include two or more phenolic hydroxyl group (—OH), a polymer polymerized from hydroxystyrene at least, or a novolac resin.
  • Examples of the compound, which includes molecules including two or more phenolic hydroxyl group, include trihydroxybenzophenones, tetrahydroxybenzophenones, pentahydroxybenzophenones, hexahydroxybenzophenones, and (polyhydroxyphenyl)alkanes, which are illustrated in the description of the quinone diazide.
  • An examples of the polymer polymerized from hydroxystyrene at least includes a resin polymerized from hydroxystyrene such as polyhydroxystyrene, hydroxystyrene/methylmethacrylate copolymer, hydroxystyrene/cyclohexyl methacrylate copolymer, hydroxystyrene/styrene copolymer, and hydroxystyrene/alkoxystyrene copolymer.
  • An example of the novolac resin may be obtained by condensation polymerization of at least one of phenols, cresols, and catechols and at least one of aldehydes and ketones.
  • The polyphenol is preferably from about 0.01 to about 40 wt. %, and more preferably from about 0.1 to about 25 wt. % relative to the total solid content of the photosensitive resin composition, such that the resolution is increased and the reduction of the transmittance of the visible light is prevented.
  • An example of the cross-linking agent includes a methylol compound. The methylol compound may be an alkoxymethylated amino resin such as alkoxymethylated melamine resin and alkoxymethylated urea resin. Examples of alkoxymethylated melamine resin include methoxymethylated melamine resin, ethoxymethylated melamine resin, propoxymethylated melamine resin, and butoxymethylated melamine resin.
  • Two or more of the above-listed cross-linking agents may be employed.
  • The cross-linking agent is preferably from about 0.01 to about 15 wt. % relative to the total solid content of the photosensitive resin composition such that an obtained film has increased transmittance of visible light and improved function as curable resin pattern.
  • The polymerizable monomer may be obtained by radical or cationic polymerization.
  • The polymerizable monomer may be a compound having a polymerizable carbon-to-carbon unsaturated bond that may be monofunctional, difunctional, or polyfunctional (i.e., trifunctional or more).
  • Examples of the monofunctional polymerizable monomer include nonylphenyl carbitol acrylate, nonylphenyl carbitol methacrylate, 2-hydroxy-3-phenoxypropyl acrylate, 2-hydroxy-3-phenoxypropyl methacrylate, 2-ethylhexyl carbitol acrylate, 2-ethylhexyl carbitol methacrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, and N-vinylpyrolidone.
  • Examples of the difunctional polymerizable monomer include 1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, ethylene glycol diacrylate, ethylene glycol dimethacrylate, neopentyl glycol diacrylate, neopentyl glycol dimethacrylate, triethylene glycol diacrylate, triethylene glycol dimethacrylate, bis(acryloyloxyethyl ether of bisphenol A, 3-methylpentanediol diacrylate, and 3-methylpentanediol dimethacrylate.
  • Examples of the polyfunctional polymerizable monomer include trimethylolpropane triacrylate, trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythritol trimethacrylate, pentaerythritol tetraacrylate, pentaerythritol tetramethacrylate, pentaerythritol pentaacrylate, pentaerythritol pentamethacrylate, di-pentaerythritol hexaacrylate, and di-pentaerythritol hexamethacrylate.
  • Preferably, the difunctional and polyfunctional polymerizable monomers can be used. In detail, pentaerythritol tetraacrylate and di-pentaerythritol hexaacrylate are preferable, and di-pentaerythritol hexaacrylate is more preferable. The difunctional and polyfunctional polymerizable monomers can be used in combination with monofunctional monomer.
  • The polymerizable monomer obtained by cationic polymerization may include a cationically polymerizable functional group such as a vinyl ether group, a propenyl ether group, an epoxy group, and an oxetanyl group.
  • Examples of the monomer including a vinyl ether group include triethylene glycol divinyl ether, 1,4-cyclohexane dimethanol divinyl ether, 4-hydroxy butyl vinyl ether, and dodecyl vinyl ether.
  • An example of the monomer including a propenyl ether group includes 4-(1-propenyloxymethyl)-1,3-dioxolane-2-on.
  • Examples of the monomer including an epoxy group include bisphenol A type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, cycloaliphatic epoxy resin, glycidyl ester type epoxy resin, glycidyl amine type epoxy resin, and heterocyclic epoxy resin.
  • Examples of the monomer including an oxetanyl group include
    • bis{3-(3-ethyloxetanyl)methyl}ether, 1,4-bis{3-(3-ethyloxetanyl)methoxy}benzene, 1,3-bis{3-(3-ethyloxetanyl)methoxy}benzene,
    • 1,4-bis{3-(3-ethyloxetanyl)methoxymethyl}benzene,
    • 1,3-bis{3-(3-ethyloxetanyl)methoxy}benzene,
    • 1,4-bis{3-(3-ethyloxetanyl)methoxy}cyclohexane,
    • 1,3-bis{3-(3-ethyloxetanyl)methoxy}cyclohexane,
    • 1,4-bis{3-(3-ethyloxetanyl)methoxymethyl}cyclohexane,
    • 1,3-bis{3-(3-ethyloxetanyl)methoxymethyl}cyclohexane, and
    • 3-(3-ethyloxetanyl)methylated novolac resin.
  • Two or more of the above-listed polymerizable monomers can be used.
  • The polymerizable monomer is preferably from about 0.001 to about 20 wt. %, and more preferably from about 0.01 to about 10 wt. % relative to the total solid content of the photosensitive resin composition.
  • Examples of the silane coupling agent include methyl trimethoxy silane, methyl triethoxy silane, vinyl trichloro silane, vinyl trimethoxy silane, vinyl triethoxy silane, vinyl triacetoxy silane, vinyl tris(2-methoxyethoxy)silane, 3 chloropropyl-trimethoxy silane, 3-chloropropylmethyl-dichloro silane, 3-chloropropylmethyl-dimethoxy silane, 3-chloropropylmethyl-diethoxy silane, 3-glycidoxypropyl-trimethoxy silane, 3-glycidoxypropyl-triethoxy silane, 3-glycidoxypropylmethyl-dimethoxy silane, 3-mercaptopropyl-trimethoxy silane, 3-methacryloxypropyl-trimethoxy silane, 3-methacryloxypropylmethyl-dimethoxy silane, 2-(3,4-epoxycyclohexyl)ethyl-trimethoxy silane, N-2-(N-vinylbenzylaminoethyl)-3-aminopropyl-trimethoxy silane hydrochloride, hexamethyl disilazane, diaminosilane, triaminopropyl-trimethoxysilane, 3-aminopropyl-trimethoxysilane, 3-aminopropyl-triethoxysilane, 3-aminopropylmethyl-diethoxysilane, 3-aminopropyl-tris(2-methoxyethoxysilane, 3-(2-aminoethyl)-3-aminopropyl-trimethoxysilane, 3-(2-aminoethyl)-3-aminopropylmethyl-trimethoxysilane, 3-ureidopropyl-trimethoxysilane, 3-ureidopropyl-triethoxysilane, N-aminoethyl-3-aminopropyl-trimethoxysilane, N-aminoethyl-3-aminopropylmethyl-trimethoxysilane, N-methyl-3-aminopropyl-trimethoxysilane, and N-phenyl-3-aminopropyl-trimethoxysilane, preferably include 3-glycidoxypropyl-trimethoxysilane, 3-glycidoxypropyl-triethoxy silane, 3-glycidoxypropyl-dimethoxysilane, and 3-glycidoxypropylmethyl-dimethoxysilane, which include an epoxy group, and more preferably, 2-(3,4-epoxycyclohexyl)ethyl-trimethoxy silane that includes an epoxy ring.
  • The silane coupling agent is preferably from about 0.01 to about 10 wt. %, more preferably from about 0.1 to about 2 wt. %, and most preferably from about 0.2 to about 1 wt. % relative to the total content of the photosensitive resin composition, such that a curable resin pattern made of the photosensitive resin composition shows improved adhesion with a substrate.
  • The photosensitive resin composition may further include other ingredients such as an antioxidant, a dissolution inhibitor, a sensitizer, an UV absorbent, a photostabilizer, an adhesion promoter, and an electron donor.
  • The photosensitive resin composition may be formed by mixing a solution containing an alkali-soluble resin dissolved in a solvent, another solution containing a quinone diazide in a solvent, and another solution containing a surfactant in a solvent. A solvent may be added to a mixture of an alkali-soluble resin, a quinone diazide, and a surfactant. It is preferable to remove solids by filtering the mixture, preferably by using a filter having a pore diameter less than about 3 microns (e.g., about 0.1 to about 2 microns). The alkali-soluble resin and the quinone diazide may be dissolved in the same solvent or in different solvents. A plurality of solvents that can be mixed with each other may be used.
  • Now, a method for forming a film pattern from the photosensitive resin composition is provided.
  • A photosensitive film is coated on a substrate such as transparent glass and subjected to light exposure and development. One or more thin film patterns such as thin film transistors, color filters, organic light emitting diodes, etc., may be formed on the substrate before the photosensitive thin film is coated.
  • Examples of the coating of the photosensitive film include slit coating using a coating device having slit type nozzles, slit-and-spin coating that first coats using a nozzle and then coats using a spin coater, die coating, and curtain flow coating. Of these coating methods, the slit-and-spin coating is preferred. After the coating, the photosensitive resin composition may be prebaked to remove volatile ingredients such as solvents, thereby forming the photosensitive resin film containing substantially no volatile ingredient. The photosensitive resin film may have a thickness of about 1.0 microns to about 8.0 microns.
  • Next, the photosensitive film is subjected to a first exposure through a mask. The mask has a pattern suitable for the function of the hardened resin pattern. The light exposure illuminates a light such as g line or g line vertically over an entire surface of the photosensitive resin film, and aligns the mask with the photosensitive resin film using a mask aligner or a stepper.
  • The photoresist resin film is then developed by puddle development, immersion development, or spray development.
  • The development may be performed by using an alkaline aqueous solution. The alkaline aqueous solution contains an inorganic alkaline compound or an organic alkaline compound.
  • Examples of the inorganic alkaline compound include sodium hydroxide, potassium hydroxide, disodium hydrogen phosphate, sodium dihydrogen phosphate, diammonium hydrogen phosphate, ammonium dihydrogen phosphate, potassium dihydrogen phosphate, sodium silicate, potassium silicate, sodium carbonate, potassium carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate, sodium borate, potassium borate, and ammonium.
  • Examples of the organic alkaline compound include tetramethylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide, monomethylamine, dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine, and ethanolamine.
  • Two or more of the above-listed alkaline compounds may be used. The content of the alkaline compound is from about 0.01 to about 10 wt. %, and preferably from about 0.1 to about 5 wt. % of the total content of the developer.
  • The developer may contain a surfactant such as a nonionic surfactant, a cationic surfactant, and an anionic surfactant.
  • Examples of the nonionic surfactant include polyoxyethylene derivatives such as polyoxyethylenealkylether, polyoxyethyleneallylether, and polyoxyethylenealkylallylether, oxyethylene/oxypropylene block copolymer, sorbitan fatty acid ester, polyoxyethylene sorbitan fatty acid ester, polyoxyethylene sorbitol fatty acid ester, glycerin fatty acid ester, polyoxyethylene fatty acid ester, and polyoxyethylene alkyl amine.
  • Examples of the cationic surfactant include an aminium salt such as stearylamine hydrochloride and a quaternary ammonium salt such as lauryl trimethyl ammonium chloride.
  • Examples of the anionic surfactant include: sulfate esters of higher alcohols, such as sodium lauryl alcohol sulfate ester and sodium oleinalcohol sulfate ester; alkyl sulfates such as sodium lauryl sulfate and ammonium lauryl sulfate; and sodium dodecylbenzene sulfonate and sodium dodecyl naphthalene sulfonate.
  • Two or more of the above-listed surfactants are used.
  • The developer may include an organic solvent including water-soluble solvents such as methanol and ethanol.
  • The developer dissolves exposed portions of the photosensitive resin film, which are exposed to light, and leaves unexposed portions of the photosensitive resin film to form a film pattern.
  • Since the photosensitive resin composition includes the quinone diazide, the exposed portions of the photosensitive resin film is quickly removed in a short time, while the unexposed portions thereof is hardly removed even though they are in contact with the developer for a long time.
  • After the development, the substrate with the film pattern is cleaned with deionized water and dried.
  • A portion or an entire portion of the film pattern is then subjected to a second light exposure preferably using (deep) ultraviolet (UV) ray. The illumination of UV on unit area in the second light exposure may be higher than that in the first light exposure. The second light exposure is conducted in order to lighten transparency of the film pattern.
  • The photosensitive resin pattern is postbaked at about 150° C. to about 250° C., and more preferably at about 180° C. to about 240° C. for about 5 to about 120 minutes, and more preferably for about 15 to about 90 minutes. The postbaking is performed by heating the substrate with a hot plate, a clean oven, etc. The postbaking improves the heat resistance and the solvent resistance of the cured photosensitive resin pattern.
  • Embodiment 1 SYNTHESIS EXAMPLE 1
  • Alkali-soluble Resin Synthesis
  • Following materials were put into a 200-ml flask provided with an agitator, a cooled tube, and a thermometer:
    methacrylate  6.8 g;
    N-cyclohexyl maleimide 14.2 g;
    3-ethyl-3-methacryloxymethyloxetane 17.8 g;
    ethyl 3-ethoxypropionate 45.3 g;
    diethylene glycol methyl ethyl ether 45.3 g; and
    azobisisobutyronitrile  1.1 g
  • The flask was then immersed in an oil bath and agitated for about three hours under nitrogen (N2) atmosphere with maintaining the temperature of the interior of the flask at about 10-110° C. As a result, an alkali-soluble resin Al was obtained, which had a weight average molecular weight (Mw) of about 8,000 based on polystyrene standards.
  • The measurement of the weight average molecular weight was performed by
  • GPC under the following conditions:
  • Device: HLC-8120GPC (manufactured by TOSOH Corporation in Japan)
  • Columns: TSK-GELG4000HXL+TSK-GELG2000HXL (serial connection) (manufactured by TOSOH Corporation in Japan)
  • Column Temperature: 40° C.
  • Solvent: tetrahydrofuran (THF)
  • Flow Rate: 1.0 ml/min
  • Injected Amount: 50 μl
  • Detector: RI (Refractive Index)
  • Concentration of Sample: 0.6 wt. %
  • Standard: TSK STANDARD POLYSTYRENE F-40, F-4, F-1, A-2500, A-500
  • SYNTHESIS EXAMPLE 2
  • First Silicone Compound (Chemical Formula 2) Synthesis
  • 204 g of polyoxyethylene having a molecular chain that has an allyl group at a terminal thereof and an OH group at another terminal thereof as shown in chemical formula 4,300 g isopropyl alcohol, 0.5 g isopropyl alcohol containing 2% chloroplatinic acid, and 1 g potassium acetate were put into a flask and uniformly mixed. The temperature was then increased up to a reflux temperature (i.e., 83° C.) of isopropyl alcohol, and 111 g of methyl siloxane having Chemical Formula 5 was gradually dropped into the reflux to perform addition reaction.
    Figure US20070254221A1-20071101-C00016
  • After the addition of methyl siloxane, the reaction was maintained for four hours and terminated after the formation of SiH group was confirmed. Thereafter, the product was heated for two hours under 110° C. and 10 mmHg to remove isopropyl alcohol, and a 310 g compound having Chemical Formula 6.
    Figure US20070254221A1-20071101-C00017
  • EXAMPLE 1
  • Preparation of Photosensitive Resin Composition 1
  • 100 parts by weight of alkali-soluble resin A1, 22 parts by weight of quinone diazide having Chemical Formula 7, two parts by weight of (p-tolyl)(p-isopropylphenyl)iodonium tetrakis(pentafluorophenyl)borate as a cationic polymerization initiator, a surfactant including 0.08 parts by weight of 3-perfluorooctyl-1,2-epoxypropane as a fluorosurfactant, 0.08 parts by weight of a first silicone compound having Chemical Formula 6, and 0.15 parts by weight of SH8400 (manufactured by Dow Corning Toray Silicone Co., Ltd.) as a second silicone compound, and a solvent including 291 parts by weight of ethyl 3-ethoxy propionate, 291 parts by weight of diethylene glycol methylethyl ether, 32 parts by weight of butyl acetate, and 32 parts by weight of butyl lactate are mixed at 23° C., and they were filtrated under pressure through a polytetrafluoroethylene cartridge filter having a pore diameter of 1.0 micron to obtain a photosensitive resin composition 1.
    Figure US20070254221A1-20071101-C00018
  • COMPARATIVE EXAMPLE 1
  • Preparation of Photosensitive Resin Composition 2
  • Except for the use of a surfactant including 0.08 parts by weight of 3-perfluorooctyl-1,2-epoxypropane, the conditions and the materials were the same as those of Example 1 to obtain a photosensitive resin composition 2.
  • COMPARATIVE EXAMPLE 2
  • Preparation of Photosensitive Resin Composition 3
  • Except for the use of a surfactant that does not include a first silicone compound, the conditions and the materials were the same as those of Example 1 to obtain a photosensitive resin composition 3.
  • COMPARATIVE EXAMPLE 3
  • Preparation of Photosensitive Resin Composition 4
  • Except for the use of a surfactant that does not include a second silicone compound, the conditions and the materials were the same as those of Example 1 to obtain a photosensitive resin composition 4.
  • Estimation of Stain Generation and Coating Uniformity
  • The photosensitive resin composition 1 (Example 1), the photosensitive resin composition 2 (Comparative Example 1), the photosensitive resin composition 3 (Comparative Example 2), and the photosensitive resin composition 4 (Comparative Example 3) were coated on four glass substrates with Mo films deposited thereon by using a spin-and-slit coater manufactured by Dainippon Screen Manufacturing Co. Ltd. Thereafter, the solvents were removed by prebaking the resin compositions in a hot plate for 135 seconds at 100° C.
  • Next, the substrates were subjected to a first light exposure using an exposer (MPA-2000 manufactured by Canon Inc. in Japan) and to development by puddle development. The substrates were then rinsed by pure water and dried, and entire surfaces of the substrates were exposed to light during a second light exposure. Subsequently, the resin compositions were postbaked in a hot plate for 160 seconds at 130° C. to form a transparent cured resin pattern.
  • Observations on stains on the transparent cured resin and build-up at edges of the substrates gave the results illustrated in TABLE 1 and FIG. 11.
  • Here, it is noted that Example 1 (EX 1) was formed by using an inventive solvent, Comparative Example 1 (CE 1) was formed by using a conventional solvent, and Comparative Examples 2-5 (CE 1-5) were made by using solvents without one or more ingredients of the inventive solvent.
  • FIGS. 11A, 11B, 11C, 11D and 11E are photographs of the photosensitive resin films for Comparative Example 1, Comparative Example 2, Comparative Example 3, Comparative Example 4, Comparative Example 5, and Example 1, respectively.
    TABLE 1
    Horizontal Vertical Irregular
    Stripe Stain Stripe Stain Spot Build-up Adhesion
    Ex 1 XX XX X X Good
    CE 1 Δ Δ Normal
    CE 2 Δ Δ X Good
    CE 3 X Poor

    (□: entirely, ◯: partly, Δ: a few, X: rare, XX: none)
  • TABLE 1 shows that horizontal stripe stains, vertical stripe strains and irregular spots generated during the manufacturing process were remarkably reduced. In addition, the edge build-up was reduced and the adhesion with an underlying film was remarkably improved. Also, the uniformity of distribution of the moieties in the inventive photosensitive resin was shown to be excellent.
  • FIGS. 11A-11F are photographs illustrating photosensitive resin films according to examples of the present invention and comparative examples. FIGS. 11A and 11B relate to Example 1, FIGS. 11C and 11D relate to Comparative Example 1, FIG. 11E relates to Comparative Example 2, and FIG. 11F relates to Comparative Example 3.
  • FIG. 11A shows no irregular spot, and FIG. 11A shows the reduced edge build-up (about 34 mm). FIG. 11C shows irregular spots spread over the substrate, FIG. 11D shows thick edge build-up (about 6 mm), FIG. 11E shows partially generated irregular spots, and FIG. 11F shows thicker edge build-up (about 10 mm).
  • Accordingly, it is preferable that a photosensitive resin composition including an organic fluorine compound and first and second silicone compounds as a surfactant improves horizontal stripe stains, vertical stripe strains, irregular spots, the edge build-up, and the adhesion with an underlying film.
  • It is preferable that the weight percentage of each of the organic fluorine compound, the first silicone compound, and the second silicone compound in the surfactant is about 10 to about 50 wt. %.
  • An organic fluorine compound present in an amount less than 10 wt. % in the surfactant may cause an edge build-up, while its presence in an amount more than 50 wt. % may cause irregular spots. A first silicone compound present in an amount less than 10 wt. % in the surfactant may cause irregular spots, while its presence in an amount more than 50 wt. % may increase edge build-up to degrade the thickness uniformity. A second silicone compound present in an amount more than 50 wt. % may weaken the adhesion.
  • TABLE 2 shows film properties for various contents of ingredients in a surfactant. Here, the contents of alkaline resin and quinone diazide were equal to in Example 1.
    TABLE 2
    Organic First Second
    Fluorine Silicone Silicone Irreg- Edge
    Com- Com- Com- Stripe ular Build-
    No. pound pound pound Stain Spot Up
    1 8 46 46 Normal Good Good
    2 10 45 45 Normal Normal Normal
    3 52 24 24 Good Very Good
    Poor
    4 46 8 46 Normal Poor Normal
    5 45 10 45 Good Normal Good
    6 24 52 24 Poor Good Poor
    7 46 46 8 Poor Normal Good
    8 45 45 10 Normal Good Good
    9 24 24 52 Excel- Normal Not
    lent Good

    (Good: good coating property

    Normal: no failure, but slightly unstable processibility

    Poor: poor quality to cause failure)
  • Embodiment 2
  • Now, thin film transistor (TFT) array panels for liquid crystal display (LCD) including an insulating layer made from the above-described photosensitive resin composition 1 and manufacturing methods thereof are described in detail with reference to accompanying drawings.
  • In the drawings, the thickness of layers, films and regions are exaggerated for clarity. Like numerals refer to like elements throughout. It will be understood that when an element such as a layer, film, region or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.
  • First, a thin film transistor (TFT) array panel according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2.
  • FIG. 1 is a layout view of a TFT array panel according to an embodiment of the present invention and FIG. 2 is a sectional view of the TFT array panel shown in FIG. 1 taken along line II-II′.
  • A plurality of gate lines 121 are formed on an insulating substrate 110, which may be transparent glass or plastic, among others.
  • The gate lines 121 transmit gate signals and extend substantially in a first direction. Each gate line 121 includes a plurality of gate electrodes 124, a plurality of projections 127 projecting downward, and an end portion 129 having a large area for contact with another layer or an external driving circuit. A gate driving circuit (not shown) for generating the gate signals may be mounted on a flexible printed circuit (FPC) film (not shown), which may be attached to the substrate 110, directly mounted on the substrate 110, or integrated onto the substrate 110. The gate lines 121 may extend to be connected to a driving circuit that may be integrated on the substrate 110.
  • The gate lines 121 include two conductive films having different physical characteristics: a lower film and an upper film disposed on the lower film. The lower film is preferably made of a low-resistivity metal, for example an Al-containing metal such as Al and Al alloy, Ag-containing metal such as Ag and Ag alloy, and Cu-containing metal such as Cu and Cu alloy, for reducing signal delay or voltage drop. The upper film is preferably made of material such as Mo containing metal such as Mo and Mo alloy, Cr, Ta, or Ti, which has good physical, chemical, and electrical contact characteristics with other materials such as indium tin oxide (ITO) or indium zinc oxide (IZO). A good example of the combination of the two films is a lower Al (alloy) film and an upper Mo (alloy) film.
  • However, the lower film may be made of good contact material, and the upper film may be made of a low-resistivity material. In this case, the upper film 129 q of the end portions 129 of the gate lines 121 may be removed to expose the lower film 129 p. In addition, the gate lines 121 may include a single layer preferably made of the above-described materials. Otherwise, the gate lines 121 may be made of various metals or conductors.
  • In FIGS. 2A and 2B, for the gate electrodes 124 and the projections 127, the lower and upper films thereof are denoted by additional characters p and q, respectively.
  • The lateral sides of the gate lines 121 are inclined relative to a surface of the substrate 110, and the inclination angle ranges between about 30-80 degrees.
  • A gate insulating layer 140 preferably made of silicon nitride (SiNx) or silicon oxide (SiOx) is formed on the gate lines 121.
  • A plurality of semiconductor stripes 151 preferably made of hydrogenated amorphous silicon (abbreviated to “a-Si”) or polysilicon are formed on the gate insulating layer 140. Each semiconductor stripe 151 extends substantially in the second direction and become wide near the gate lines 121 such that the semiconductor stripes 151 cover large areas of the gate lines 121. Each semiconductor stripe 151 has a plurality of projections 154 branched out toward the gate electrodes 124.
  • A plurality of ohmic contact stripes and islands 161 and 165 are formed on the semiconductor stripes 151. The ohmic contact stripes and islands 161 and 165 are preferably made of n+ hydrogenated a-Si heavily doped with an n-type impurity such as phosphorus, or they may be made of silicide. Each ohmic contact stripe 161 has a plurality of projections 163, and the projections 163 and the ohmic contact islands 165 are located in pairs on the projections 154 of the semiconductor stripes 151.
  • The lateral sides of the semiconductor stripes 151 and the ohmic contacts 161 and 165 are inclined relative to a surface of the substrate, and the inclination angles thereof are preferably in a range of about 30-80 degrees.
  • A plurality of data lines 171, a plurality of drain electrodes 175, and a plurality of storage conductors 177 are formed on the ohmic contacts 161 and 165 and the gate insulating layer 140.
  • The data lines 171 transmit data signals and extend substantially in the second direction to intersect the gate lines 121. Each data line 171 includes a plurality of source electrodes 173 projecting toward the gate electrodes 124 and an end portion 179 having a large area for contact with another layer or an external driving circuit. A data driving circuit (not shown) for generating the data signals may be mounted on a FPC film (not shown), which may be attached to the substrate 110, directly mounted on the substrate 110, or integrated onto the substrate 110. The data lines 171 may extend to be connected to a driving circuit that may be integrated on the substrate 110.
  • The drain electrodes 175 are separated from the data lines 171 and disposed opposite the source electrodes 173 with respect to the gate electrodes 124.
  • A gate electrode 124, a source electrode 173, and a drain electrode 175 along with a projection 154 of a semiconductor stripe 151 form a TFT having a channel formed in the projection 154 disposed between the source electrode 173 and the drain electrode 175.
  • The storage conductors 177 are disposed on the projections 127 of the gate lines 121.
  • The data lines 171, the drain electrodes 175, and the storage conductors 177 have a triple-layered structure including a lower film 171 p, 175 p and 177 p, an intermediate film 171 q, 175 q and 177 q, and an upper film 171 r, 175 r and 177 r. The lower film 171 p, 175 p and 177 p is preferably made of refractory metal such as Cr, Mo, Ta, Ti, or alloys thereof, the intermediate film 171 q, 175 q and 177 q is preferably made of low resistivity metal such as Al containing metal, Ag containing metal, and Cu containing metal, and the upper film 171 r, 175 r and 177 r is made of refractory metal or alloys thereof having a good contact characteristic with ITO or IZO.
  • The data lines 171, the drain electrodes 175, and the storage conductors 177 may have a double-layered structure including a refractory-metal lower film (not shown) and a low-resistivity upper film (not shown) or a single-layer structure preferably made of the above-described materials. However, the data lines 171, the drain electrodes 175, and the storage conductors 177 may be made of various metals or conductors.
  • In FIGS. 2A and 2B, for the source electrodes 173 and the end portions 179 of the data lines 179, the lower, the intermediate, and the upper films thereof are denoted by additional characters p, q and r, respectively.
  • The data lines 171, the drain electrodes 175, and the storage conductors 177 have inclined edge profiles, and the inclination angles thereof range about 30-80 degrees.
  • The ohmic contacts 161 and 165 are interposed only between the underlying semiconductor stripes 151 and the overlying conductors 171 and 175 thereon and reduce the contact resistance therebetween. Although the semiconductor stripes 151 are narrower than the data lines 171 in most places, the width of the semiconductor stripes 151 becomes large near the gate lines 121 as described above to smooth the profile of the surface, thereby preventing the disconnection of the data lines 171. The projections 154 of the semiconductor stripes 151 include some exposed portions that are not covered by the data lines 171, the drain electrodes 175, and the storage conductors 177 such as portions located between the source electrodes 173 and the drain electrodes 175.
  • A passivation layer 180 is formed on the data lines 171, the drain electrodes 175, the storage conductors 177, and the exposed portions of the semiconductor stripes 151.
  • The passivation layer 180 is preferably made of photosensitive organic insulator having a dielectric constant preferably less than about 4.0. The passivation 180 may have a flat surface and a thickness from about 1.0 to about 8.0 microns.
  • The organic insulator for the passivation 180 is a photosensitive resin composition including an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes an organic fluorine compound of
    Figure US20070254221A1-20071101-C00019

    where Rf is a chained or branched perfluoroalkylene group including about 5-10 carbon atoms and Z is a hydrogen or a fluorine;
  • a first silicone compound of
    Figure US20070254221A1-20071101-C00020

    where R is a chained or branched alkylene group including about 2-5 carbon atoms and each of x and y is an integer of about 1-20; and
  • a second silicone compound of
    Figure US20070254221A1-20071101-C00021

    where R′ is an alkyl group including about 1-20 carbon atoms or a chained or branched carbonyl alkyl group including about 2-21 carbon atoms and each of v and w is an integer of about 1-20, and each of m and 1 is an integer of about 1-9 wherein (m+1) lies between 2 and 10. The photosensitive resin composition may further include one or more of a cationic polymerization initiator, a polyphenol, a cross-linking agent, a polymerizable monomer, and a silane coupling agent.
  • The surfactant in the photosensitive resin composition has an improved solubility for solid ingredients such as the alkali-soluble resin and the quinone diazide to make the photosensitive resin composition uniformly spread. Accordingly, a uniformly thick film can be formed. As a result, the build-up near the edges of the passivation layer 180 is remarkably reduced to improve the transmissive and reflective characteristics of the passivation layer 180.
  • The passivation layer 180 may include a lower film of inorganic insulator such as silicon nitride or silicon oxide and an upper film of the above-described organic insulator such that it takes the excellent insulating characteristics of the organic insulator while preventing the exposed portions of the semiconductor stripes 151 from being damaged by the organic insulator.
  • The passivation layer 180 has a plurality of contact holes 182, 185 and 187 exposing the end portions 179 of the data lines 171, the drain electrodes 175, and the storage conductors 177, respectively. The passivation layer 180 and the gate insulating layer 140 have a plurality of contact holes 181 exposing the end portions 129 of the gate lines 121.
  • A plurality of pixel electrodes 190 and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180. They are preferably made of transparent conductor such as ITO or IZO or reflective conductor such as Ag, Al, Cr, or alloys thereof.
  • The pixel electrodes 190 are physically and electrically connected to the drain electrodes 175 through the contact holes 185 and connected to the storage conductors 177 through the contact holes 177 such that the pixel electrodes 190 receive data voltages from the drain electrodes 175 and transmit the data voltages to the storage conductors 177. The pixel electrodes 190 supplied with the data voltages generate electric fields in cooperation with a common electrode (not shown) of an opposing display panel (not shown) that is supplied with a common voltage. The generated electric fields determine the orientations of liquid crystal molecules (not shown) of a liquid crystal layer (not shown) disposed between the two electrodes. A pixel electrode 190 and the common electrode form a capacitor referred to as a “liquid crystal capacitor,” which stores applied voltages after the TFT turns off.
  • A pixel electrode 190 overlaps a projection 127 of a previous gate line 121. The pixel electrode 190 and a storage conductor 177 connected thereto and the projection 127 form an additional capacitor referred to as a “storage capacitor,” which enhances the voltage-storing capacity of the liquid crystal capacitor.
  • The pixel electrodes 190 overlap the gate lines 121 and the data lines 171 to increase the aperture ratio.
  • The contact assistants 81 and 82 are connected to the end portions 129 of the gate lines 121 and the end portions 179 of the data lines 171 through the contact holes 181 and 182, respectively. The contact assistants 81 and 82 protect the end portions 129 and 179 and enhance the adhesion between the end portions 129 and 179 and external devices.
  • A plurality of slope members (not shown) may be formed on the pixel electrodes 190 and the passivation layer 180. Each of the slope members includes a ridge and inclined surfaces having an inclination angle of from about 1 to about 10 degrees and determines tilt directions of the liquid crystal molecules to reduce the response time of the liquid crystal. Like the passivation layer 180, the slope members may be made of a photosensitive resin composition including an alkali-soluble resin, a quinone diazide, a surfactant, an organic fluorine compound having Chemical Formula 1, a first silicone compound having Chemical formula 2, a second silicone compound having Chemical formula 3, and a solvent. The solvent includes a diethylene glycol dialkyl ether that includes an alkyl group including one to five carbon atoms, an ethyl 3-ethoxy propionate, an alkyl acetate that includes an alkyl group including three to eight carbon atoms, and an alkyl lactate that includes an alkyl group including one to six carbon atoms.
  • A method for manufacturing the TFT array panel shown in FIGS. 1 and 2 according to an embodiment of the present invention will be described with reference to FIGS. 3A-6B as well as FIGS. 1 and 2.
  • FIGS. 3A, 4A, 5A and 6A are layout views of the TFT array panel shown FIGS. 1 and 2 in intermediate steps of a manufacturing method thereof according to an embodiment of the present invention, FIG. 3B is a sectional view of the TFT array panel shown in FIG. 3A taken along the line IIIB-IIIB, FIG. 4B is a sectional view of the TFT array panel shown in FIG. 4A taken along the line IVB-IVB′, FIG. 5B is a sectional view of the TFT array panel shown in FIG. 5A taken along the line VB-VB′, and FIG. 6B is a sectional view of the TFT array panel shown in FIG. 6A taken along the line VIB-VIB′.
  • Referring to FIGS. 3A and 3B, a conductive layer is deposited on an insulating substrate 110 by sputtering, etc. The conductive layer has a lower film preferably made of Al or Al—Nd alloy and having a thickness of preferably about 2,500 Å and an upper film preferably made of Mo.
  • The lower and the upper films may be co-sputtered using an Al or Al—Nd target and a Mo target. When the lower film is deposited, the Al(—Nd) target is powered, while the Mo target is unpowered. After the deposition of the lower film, the Al(—Nd) target is unpowered and the Mo target is powered to deposit the upper film.
  • The upper and the lower films are patterned by lithography and etching to form a plurality of gate lines 121 including gate electrodes 124, projections 127, and end portions 129.
  • Referring to FIGS. 4A and 4B, a gate insulating layer 140 having a thickness of about 2,000 to about 5,000 Å is deposited at a temperature of about 250 to about 500° C. Subsequently, an intrinsic amorphous silicon layer and an extrinsic amorphous silicon layer are sequentially deposited on the gate insulating layer 140 and patterned by lithography and etching to form a plurality of extrinsic semiconductor stripes 164 and a plurality of intrinsic semiconductor stripes 151 including projections 154.
  • Referring to FIGS. 5A and 5B, a conductive layer is deposited by sputtering, etc. The conductive layer includes a lower film preferably made of Mo, an intermediate film preferably made of Al, and an upper film preferably made of Mo. The thickness of the conductive layer is equal to about 4,000 Å and the sputtering temperature is equal to about 150° C.
  • The conductive layer is then patterned by lithography and wet etch to form a plurality of data lines 171 including source electrodes 173 and end portions 179, the drain electrodes 175, and the storage conductors 177. The etchant for the wet etch may include phosphoric acid of preferably about 63-70%, nitric acid of preferably about 4-8%, acetic acid of preferably about 8-11%, and deionized water.
  • Thereafter, exposed portions of the extrinsic semiconductor stripes 164, which are not covered with the data lines 171, the drain electrodes 175, and the storage conductors 177, are removed to complete a plurality of ohmic contact stripes 161 including projections 163 and a plurality of ohmic contact islands 165 and to expose portions of the intrinsic semiconductor stripes 151. Oxygen plasma treatment preferably follows in order to stabilize the exposed surfaces of the semiconductor stripes 151.
  • Referring to FIGS. 6A and 6B, surfactant includes an organic fluorine compound of
    Figure US20070254221A1-20071101-C00022

    where Rf is a chained or branched perfluoroalkylene group including about 5-10 carbon atoms and Z is a hydrogen or a fluorine;
  • a first silicone compound of
    Figure US20070254221A1-20071101-C00023

    where R is a chained or branched alkylene group including about 2-5 carbon atoms and each of x and y is an integer of about 1-20; and
  • a second silicone compound of
    Figure US20070254221A1-20071101-C00024

    where R′ is an alkyl group including about 1-20 carbon atoms or a chained or branched carbonyl alkyl group including about 2-21 carbon atoms and each of v and w is an integer of about 1-20, and each of m and 1 is an integer of about 1-9 wherein (m+1) lies between 2 and 10. The photosensitive resin composition may further include one or more of a cationic polymerization initiator, a polyphenol, a cross-linking agent, a polymerizable monomer, and a silane coupling agent.
  • The coating is performed by slit coating while moving the substrate 110 or a nozzle (not shown) of a coater (not shown). The thickness of the coated resin composition is about 1.0 to about 8.0 microns.
  • The surfactant in the photosensitive resin composition has an improved solubility for solid ingredients such as the alkali-soluble resin and the quinone diazide to make the coating uniformly spread. Accordingly, a uniformly thick coating can be formed.
  • After the coating, the substrate 110 coated with the photosensitive resin composition is put into an oven and prebaked for about 90 to about 180 seconds at a temperature of about 90 to about 110° C. The prebaking removes volatile ingredients such as solvents.
  • Next, the photosensitive film is aligned with a mask by using a mask aligner and subjected to a first exposure through the mask. The light exposure illuminates light such as g line or g line vertically over an entire surface of the photosensitive resin film.
  • The photoresist resin film is then developed by puddle development with a developer of an alkaline aqueous solution preferably containing 3 wt. % diisopropyl amine. The developer dissolves exposed portions of the photosensitive resin film, which are exposed to light, and leaves unexposed portions of the photosensitive resin film to form a passivation layer 180 having a plurality of contact holes 182, 185 and 187 and upper portions of a plurality of contact holes 181 as shown in FIGS. 6A and 6B.
  • Since the photosensitive resin composition includes quinone diazide, the exposed portions of the photosensitive resin film is quickly removed in a short time, while the unexposed portions are hardly removed even though they are in contact with the developer for a long time.
  • After the development, the substrate 110 with the passivation layer 180 is cleaned with deionized water and dried.
  • At least a portion of the passivation layer 180 is then subjected to a second light exposure preferably using (deep) ultraviolet (UV) ray. The illumination of UV on unit area in the second light exposure may be higher than that in the first light exposure. The second light exposure removes the portions that were insufficiently exposed to light in the first light exposure to reduce the remnants.
  • The passivation layer 180 is postbaked for about 5 to about 120 minutes and more preferably for about 15 to about 90 minutes at a temperature of about 150° C. to about 250° C. and more preferably at a temperature of about 180° C. to about 240° C. The postbaking is performed by heating the substrate 110 with a hot plate (not shown) or a clean oven (not shown). The postbaking improves the heat resistance and the solvent resistance of the cured photosensitive resin pattern.
  • Subsequently, the gate insulating layer 140 is etched using the passivation layer 180 as an etch mask to complete the contact holes 181.
  • Finally, a plurality of pixel electrodes 190 and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180 and on the exposed portions of the drain electrodes 175, the end portions 129 of the gate lines 121, and the end portions 179 of the data lines 171 by sputtering, lithography, and etching an IZO or ITO layer as shown FIGS. 1 and 2.
  • The above-described photosensitive resin composition may be employed to other insulating layers such as the gate insulating layer 140.
  • Embodiment 3
  • FIG. 7 is a layout view of a TFT array panel according to another embodiment of the present invention and FIG. 8 is a sectional view of the TFT array panel shown in FIG. 7 taken along the line VIII-VIII′.
  • A plurality of gate lines 121 are formed on an insulating substrate 110 such as transparent glass or plastic.
  • The gate lines 121 transmit gate signals and extend substantially in a first direction. Each gate line 121 includes a plurality of gate electrodes 124, a plurality of projections 127 projecting downward, and an end portion 129 having a large area for contact with another layer or an external driving circuit. A gate driving circuit (not shown) for generating the gate signals may be mounted on a flexible printed circuit (FPC) film (not shown), which may be attached to the substrate 110, directly mounted on the substrate 110, or integrated onto the substrate 110. The gate lines 121 may extend to be connected to a driving circuit that may be integrated on the substrate 110.
  • The gate lines 121 include two conductive films with different physical characteristics: a lower film and an upper film disposed on the lower film. The lower film is preferably made of a low-resistivity metal, for example an Al-containing metal such as Al and Al alloy, an Ag-containing metal such as Ag and Ag alloy, and a Cu-containing metal such as Cu and Cu alloy, for reducing signal delay or voltage drop. The upper film is preferably made of a material such as Mo containing metal such as Mo and Mo alloy, Cr, Ta, or Ti, which has good physical, chemical, and electrical contact characteristics with other materials such as indium tin oxide (ITO) or indium zinc oxide (IZO). A good example of the combination of the two films is a lower Al (alloy) film and an upper Mo (alloy) film.
  • However, the lower film may be made of a good contact material, and the upper film may be made of a low-resistivity material. In this case, the upper film 129 q of the end portions 129 of the gate lines 121 may be removed to expose the lower film 129 p. In addition, the gate lines 121 may include a single layer preferably made of the above-described materials. Otherwise, the gate lines 121 may be made of various metals or conductors.
  • In FIGS. 7 and 8, for the gate electrodes 124 and the projections 127, the lower and upper films thereof are denoted by additional characters p and q, respectively.
  • The lateral sides of the gate lines 121 are inclined relative to a surface of the substrate 110, and the inclination angle is in the range of about 30-80 degrees.
  • A gate insulating layer 140 preferably made of silicon nitride (SiNx) or silicon oxide (SiOx) is formed on the gate lines 121.
  • A plurality of semiconductor stripes 151 preferably made of hydrogenated amorphous silicon (abbreviated to “a-Si”) or polysilicon are formed on the gate insulating layer 140. Each semiconductor stripe 151 extends substantially in the second direction and become wide near the gate lines 121 such that the semiconductor stripes 151 cover large areas of the gate lines 121. Each semiconductor stripe 151 has a plurality of projections 154 branching out toward the gate electrodes 124.
  • A plurality of ohmic contact stripes and islands 161 and 165 are formed on the semiconductor stripes 151. The ohmic contact stripes and islands 161 and 165 are preferably made of n+ hydrogenated a-Si heavily doped with n-type impurity such as phosphorus, or they may be made of silicide. Each ohmic contact stripe 161 has a plurality of projections 163, and the projections 163 and the ohmic contact islands 165 are located in pairs on the projections 154 of the semiconductor stripes 151.
  • The lateral sides of the semiconductor stripes 151 and the ohmic contacts 161 and 165 are inclined relative to a surface of the substrate 110, and the inclination angles are preferably in a range of about 30-80 degrees.
  • A plurality of data lines 171, a plurality of drain electrodes 175, and a plurality of storage conductors 177 are formed on the ohmic contacts 161 and 165 and the gate insulating layer 140.
  • The data lines 171 transmit data signals and extend substantially in the second direction to intersect the gate lines 121. Each data line 171 includes a plurality of source electrodes 173 projecting toward the gate electrodes 124 and an end portion 179 having a large area for contact with another layer or an external driving circuit. A data driving circuit (not shown) for generating the data signals may be mounted on a FPC film (not shown), which may be attached to the substrate 110, directly mounted on the substrate 110, or integrated onto the substrate 110. The data lines 171 may extend to be connected to a driving circuit that may be integrated on the substrate 110.
  • The drain electrodes 175 are separated from the data lines 171 and disposed opposite the source electrodes 173 with respect to the gate electrodes 124.
  • A gate electrode 124, a source electrode 173, and a drain electrode 175 along with a projection 154 of a semiconductor stripe 151 form a TFT having a channel formed in the projection 154 disposed between the source electrode 173 and the drain electrode 175.
  • The storage conductors 177 are disposed on the projections 127 of the gate lines 121.
  • The data lines 171, the drain electrodes 175, and the storage conductors 177 have a triple-layered structure including a lower film 171 p and 175 p, an intermediate film 171 q and 175 q, and an upper film 171 r and 175 r. The lower film 171 p and 175 p is preferably made of a refractory metal such as Cr, Mo, Ta, Ti, or alloys thereof, the intermediate film 171 q and 175 q is preferably made of a low-resistivity metal such as an Al-containing metal, a Ag-containing metal, and a Cu-containing metal, and the upper film 171 r and 175 r is made of refractory metal or alloys thereof having a good contact characteristic with ITO or IZO.
  • The data lines 171, the drain electrodes 175, and the storage conductors 177 may have a double-layered structure including a refractory-metal lower film (not shown) and a low-resistivity upper film (not shown) or a single-layer structure preferably made of the above-described materials. However, the data lines 171, the drain electrodes 175, and the storage conductors 177 may be made of various metals or conductors.
  • In FIGS. 7 and 8, for the source electrodes 173, the storage conductors 177, and the end portions 179 of the data lines 179, the lower, the intermediate, and the upper films thereof are denoted by additional characters p, q and r, respectively.
  • The data lines 171, the drain electrodes 175, and the storage conductors 177 have inclined profiles, and the inclination angles range between about 30-80 degrees with respect to the substrate 110.
  • The ohmic contacts 161 and 165 are interposed only between the underlying semiconductor stripes 151 and the overlying conductors 171 and 175 thereon and reduce the contact resistance therebetween. Although the semiconductor stripes 151 are narrower than the data lines 171 at most places, the width of the semiconductor stripes 151 becomes large near the gate lines 121 as described above to smooth the profile of the surface, thereby preventing the disconnection of the data lines 171. The projections 154 of the semiconductor stripes 151 include some exposed portions that are not covered with the data lines 171, the drain electrodes 175, and the storage conductors 177 such as the portions located between the source electrodes 173 and the drain electrodes 175.
  • A lower passivation film 180 q is formed on the data lines 171, the drain electrodes 175, the storage conductors 177, and the exposed portions of the semiconductor stripes 151. The lower passivation film 180 q is preferably made of an inorganic insulator such as silicon nitride or silicon oxide.
  • A plurality of color filter stripes 230 are formed on the lower passivation film 180 p.
  • The color filter stripes 230 extend along the second direction and each of the color filter stripes 230 represent one of primary colors such as red, green, and blue. Adjacent color filter stripes 230 represent different colors and they have edges exactly matching with each other on the data lines 171. However, the adjacent color filter stripes 230 may overlap each other to block the light leakage between the pixel electrodes 190, or may be spaced apart from each other. The color filter stripes 230 do not exist in the peripheral areas provided with the end portions 129 and 179 of the signal lines 121 and 171.
  • When the color filter stripes 230 are disposed on the substrate 110 along with the TFTs, the aperture ratio can be increased.
  • An upper passivation film 180 q is formed on the color filter stripes 230. The lower and the upper passivation films 180 p and 180 q prevent pigments in the color filter stripes 230 from permeating into other layers.
  • The upper passivation film 180 q is preferably made of a photosensitive organic insulator having a dielectric constant preferably less than about 4.0. The passivation 180 may have a flat surface.
  • The organic insulator for the upper passivation 180 q is a photosensitive resin composition including an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes an organic fluorine compound of
    Figure US20070254221A1-20071101-C00025

    where Rf is a chained or branched perfluoroalkylene group including about 5-10 carbon atoms and Z is a hydrogen or a fluorine;
  • a first silicone compound of
    Figure US20070254221A1-20071101-C00026

    where R is a chained or branched alkylene group including about 2-5 carbon atoms and each of x and y is an integer of about 1-20; and
  • a second silicone compound of
    Figure US20070254221A1-20071101-C00027

    where R′ is an alkyl group including about 1-20 carbon atoms or a chained or branched carbonyl alkyl group including about 2-21 carbon atoms and each of v and w is an integer of about 1-20, and each of m and 1 is an integer of about 1-9 wherein (m+1) lies between 2 and 10. The photosensitive resin composition may further include a cationic polymerization initiator, a polyphenol, a cross-linking agent, a polymerizable monomer, and a silane coupling agent.
  • The surfactant in the photosensitive resin composition has an improved solubility for solid ingredients such as the alkali-soluble resin and the quinone diazide to make the photosensitive resin composition uniformly spread. Accordingly, a uniformly thick film can be formed. As a result, the build-up at edges of the passivation layer 180 is remarkably reduced to improve the transmissive and reflective characteristics of the passivation layer 180.
  • The passivation films 180 p and 180 q have a plurality of contact holes 182, 185 and 187 exposing the end portions 179 of the data lines 171, the drain electrodes 175, and the storage conductors 177, respectively. The passivation layer 180 and the gate insulating layer 140 have a plurality of contact holes 181 exposing the end portions 129 of the gate lines 121. Furthermore, the color filter stripes 230 have a plurality of contact holes 235 and 237 exposing lower portions of the contact holes 185 and 187 and surfaces of the lower passivation film 180 q near the contact holes 185 and 187.
  • A plurality of pixel electrodes 190 and a plurality of contact assistants 81 and 82 are formed on the upper passivation film 180 q. They are preferably made of a transparent conductor such as ITO or IZO or reflective conductor such as Ag, Al, Cr, or alloys thereof.
  • The pixel electrodes 190 are electrically connected to the drain electrodes 175 through the contact holes 185 and connected to the storage conductors 177 through the contact holes 177 such that the pixel electrodes 190 receive data voltages from the drain electrodes 175 and transmit the data voltages to the storage conductors 177. The pixel electrodes 190 supplied with the data voltages generate electric fields in cooperation with a common electrode (not shown) of an opposing display panel (not shown) supplied with a common voltage, which determine the orientations of liquid crystal molecules (not shown) of a liquid crystal layer (not shown) disposed between the two electrodes. A pixel electrode 190 and the common electrode form a liquid crystal capacitor.
  • A pixel electrode 190 overlaps a projection 127 of a previous gate line 121. The pixel electrode 190 and a storage conductor 177 connected thereto and the projection 127 form a storage capacitor.
  • The pixel electrodes 190 overlap the gate lines 121 and the data lines 171 to increase the aperture ratio.
  • The contact assistants 81 and 82 are connected to the end portions 129 of the gate lines 121 and the end portions 179 of the data lines 171 through the contact holes 181 and 182, respectively. The contact assistants 81 and 82 protect the end portions 129 and 179 and enhance the adhesion between the end portions 129 and 179 and external devices.
  • Now, a method of manufacturing the TFT array panel shown in FIGS. 7 and 8 is described in detail with reference to FIGS. 9A-10B as well as FIGS. 7 and 8.
  • FIGS. 9A and 10A are layout views of the TFT array panel shown FIGS. 7 and 8 in intermediate steps of a manufacturing method thereof according to an embodiment of the present invention, FIG. 9B is a sectional view of the TFT array panel shown in FIG. 9A taken along the line IXB-IXB′, and FIG. 10B is a sectional view of the TFT array panel shown in FIG. 9A taken along the line XB-XB′.
  • Referring to FIGS. 9A and 9B, a plurality of gate lines 121 including gate electrodes projections 127, and end portions 129 are formed on an insulating substrate 110. A gate insulating layer 140, a plurality of semiconductor stripes 151 including projections 154, and a plurality of ohmic contacts 161 and 165 including projections 163 are sequentially formed on the gate lines 121 and the substrate 110. A plurality of data lines 171 including source electrodes 173, a plurality of data lines 171, and a plurality of storage conductors 177 are formed on the ohmic contacts 161 and 163 and the gate insulating layer 140. A lower passivation film 180 p is formed by PECVD, etc. A negative photosensitive film including one of primary color pigments is coated and patterned to form a plurality of color filter stripes having contact holes 235 and 237. Repeating the film coating and patterning for other primary colors, a plurality of color filter stripes 230 representing other primary colors are also formed.
  • Next, a photosensitive resin film including an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent is coated on the color filter stripes 230. The surfactant includes an organic fluorine compound of
    Figure US20070254221A1-20071101-C00028

    where Rf is a chained or branched perfluoroalkylene group including about 5-10 carbon atoms and Z is a hydrogen or a fluorine;
  • a first silicone compound of
    Figure US20070254221A1-20071101-C00029

    where R is a chained or branched alkylene group including about 2-5 carbon atoms and each of x and y is an integer of about 1-20; and
  • a second silicone compound of
    Figure US20070254221A1-20071101-C00030

    where R′ is an alkyl group including about 1-20 carbon atoms or a chained or branched carbonyl alkyl group including about 2-21 carbon atoms and each of v and w is an integer of about 1-20, and each of m and 1 is an integer of about 1-9 wherein (m+1) lies between 2 and 10. The photosensitive resin composition may further include one or more of a cationic polymerization initiator, a polyphenol, a cross-linking agent, a polymerizable monomer, and a silane coupling agent.
  • The coating is performed by slit coating while moving the substrate 110 or a nozzle (not shown) of a coater (not shown). The thickness of the coated resin composition is about 1.0 to about 8.0 microns.
  • The surfactant in the photosensitive resin composition has an improved solubility for solid ingredients such as the alkali-soluble resin and the quinone diazide to make the coating deposit uniformly. Accordingly, a uniformly thick coating can be formed.
  • After the coating, the substrate 110 coated with the photosensitive resin composition is put into an oven and prebaked for about 90 to about 180 seconds at a temperature of about 90 to about 110° C. The prebaking removes volatile ingredients such as solvents.
  • Next, the photosensitive film is aligned with a mask by using a mask aligner and subjected to a first exposure through the mask. The light exposure illuminates a light such as g line or g line vertically over an entire surface of the photosensitive resin film.
  • The photoresist resin film is then developed by puddle development with a developer of an alkaline aqueous solution preferably containing 3 wt. % diisopropyl amine. The developer dissolves the light-exposed portions of the photosensitive resin film and leaves the unexposed portions of the photosensitive resin film to form an upper passivation film 180 q having upper portions of a plurality of contact holes 181, 182, 185 and 187 as shown in FIGS. 10A and 10B.
  • Since the photosensitive resin composition includes the quinone diazide, the exposed portions of the photosensitive resin film is quickly removed in a short time, while the unexposed portions are hardly removed even though they are in contact with the developer for a long time.
  • After the development, the substrate 110 with the upper passivation film 180 q is cleaned with deionized water and dried.
  • A portion or an entire portion of the upper passivation film 180 q is then subjected to a second light exposure preferably using (deep) ultraviolet (UV) ray. The illumination of UV on unit area in the second light exposure may be higher than that in the first light exposure. The second light exposure removes the portions that may be insufficiently exposed to light in the first light exposure to reduce the remnants.
  • The upper passivation film 180 q is postbaked for about 5 to about 120 minutes and more preferably from about 15 to about 90 minutes at a temperature from about 150° C. to about 250° C. and more preferably from about 180° C. to about 240° C. The postbaking is performed by heating the substrate 110 with a hot plate (not shown). The postbaking improves the heat resistance and the solvent resistance of the cured photosensitive resin pattern.
  • Subsequently, the lower passivation film 180 p and the gate insulating layer 140 are etched using the upper passivation film 180 q as an etch mask to complete the contact holes 181, 182, 185 and 187.
  • Finally, a plurality of pixel electrodes 190 and a plurality of contact assistants 81 and 82 are formed on the upper passivation film 180 q and on the exposed portions of the drain electrodes 175, the end portions 129 of the gate lines 121, and the end portions 179 of the data lines 171 by sputtering, lithography, and etching an IZO or ITO layer as shown FIGS. 7 and 8.
  • The above-described photosensitive resin composition may be employed to other insulating layers such as the gate insulating layer 140 and the lower passivation film 180 p.
  • Many of the above-described features of the TFT array panel and the manufacturing method thereof shown in FIGS. 1-6B may be appropriate to the TFT array panel and the manufacturing method thereof shown in FIGS. 7A-10B.
  • The above-described photosensitive resin composition may be also employed to insulating layers or slope members on the other panel facing a TFT panel. In addition, the above-described photosensitive resin composition may be employed to other display devices such as organic light emitting diode (OLED) display.
  • While the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art will appreciate that various modifications and substitutions can be made thereto without departing from the spirit and scope of the present invention as set forth in the appended claims.

Claims (2)

  1. 1. A photosensitive resin composition comprising:
    an alkali-soluble resin;
    a quinone diazide;
    a solvent; and
    a surfactant that includes:
    an organic fluorine compound of structure
    Figure US20070254221A1-20071101-C00031
    where Rf is a chained or branched perfluoroalkylene group including about 5-10 carbon atoms and Z is a hydrogen or a fluorine;
    a first silicone compound of structure
    Figure US20070254221A1-20071101-C00032
    where R is a chained or branched alkylene group including about 2-5 carbon atoms and each of x and y is an integer of about 1-20; and
    a second silicone compound of structure
    Figure US20070254221A1-20071101-C00033
    where R′ is an alkyl group including about 1-20 carbon atoms or a chained or branched carbonyl alkyl group including about 2-21 carbon atoms and each of v and w is an integer of about 1-20, and each of m and 1 is an integer of about 1-9 wherein (m+1) lies between 2 and 10.
  2. 2-19. (canceled)
US11788503 2004-12-24 2007-04-20 Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel Abandoned US20070254221A1 (en)

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