US20070169889A1 - Methods and apparatus for selectively coupling process tools to abatement reactors - Google Patents
Methods and apparatus for selectively coupling process tools to abatement reactors Download PDFInfo
- Publication number
- US20070169889A1 US20070169889A1 US11/555,032 US55503206A US2007169889A1 US 20070169889 A1 US20070169889 A1 US 20070169889A1 US 55503206 A US55503206 A US 55503206A US 2007169889 A1 US2007169889 A1 US 2007169889A1
- Authority
- US
- United States
- Prior art keywords
- chamber
- abatement
- chambers
- thermal reaction
- inlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000010168 coupling process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 title abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 236
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 36
- 231100000719 pollutant Toxicity 0.000 claims abstract description 36
- 239000002699 waste material Substances 0.000 claims abstract description 15
- 239000012530 fluid Substances 0.000 claims description 126
- 239000007789 gas Substances 0.000 claims description 81
- 238000000354 decomposition reaction Methods 0.000 claims description 78
- 238000012545 processing Methods 0.000 claims description 46
- 239000007795 chemical reaction product Substances 0.000 claims description 41
- 239000010795 gaseous waste Substances 0.000 claims description 40
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000002912 waste gas Substances 0.000 claims description 21
- 238000004891 communication Methods 0.000 claims description 20
- 239000007800 oxidant agent Substances 0.000 claims description 20
- 230000001590 oxidative effect Effects 0.000 claims description 16
- 238000010791 quenching Methods 0.000 claims description 16
- 230000000171 quenching effect Effects 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 abstract description 136
- 230000008569 process Effects 0.000 abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 37
- 230000008021 deposition Effects 0.000 description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 25
- 239000001301 oxygen Substances 0.000 description 25
- 229910052760 oxygen Inorganic materials 0.000 description 25
- 239000007788 liquid Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 24
- 239000011148 porous material Substances 0.000 description 22
- 239000000446 fuel Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 239000000203 mixture Substances 0.000 description 16
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 12
- -1 devices Substances 0.000 description 11
- 239000011261 inert gas Substances 0.000 description 11
- 239000006260 foam Substances 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 9
- 239000013618 particulate matter Substances 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 230000036961 partial effect Effects 0.000 description 8
- 238000002485 combustion reaction Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052596 spinel Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000003915 liquefied petroleum gas Substances 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000003345 natural gas Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- SYNPRNNJJLRHTI-UHFFFAOYSA-N 2-(hydroxymethyl)butane-1,4-diol Chemical compound OCCC(CO)CO SYNPRNNJJLRHTI-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000856 hastalloy Inorganic materials 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 229910001026 inconel Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 125000003718 tetrahydrofuranyl group Chemical group 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012717 electrostatic precipitator Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000013023 gasketing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011491 glass wool Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000003295 industrial effluent Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical class C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/38—Removing components of undefined structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/72—Organic compounds not provided for in groups B01D53/48 - B01D53/70, e.g. hydrocarbons
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
- B01D53/79—Injecting reactants
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/86—Catalytic processes
- B01D53/8659—Removing halogens or halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/86—Catalytic processes
- B01D53/8659—Removing halogens or halogen compounds
- B01D53/8662—Organic halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/24—Stationary reactors without moving elements inside
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23C—METHODS OR APPARATUS FOR COMBUSTION USING FLUID FUEL OR SOLID FUEL SUSPENDED IN A CARRIER GAS OR AIR
- F23C7/00—Combustion apparatus characterised by arrangements for air supply
- F23C7/02—Disposition of air supply not passing through burner
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
- F23G7/00—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals
- F23G7/06—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases
- F23G7/061—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases with supplementary heating
- F23G7/065—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases with supplementary heating using gaseous or liquid fuel
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23M—CASINGS, LININGS, WALLS OR DOORS SPECIALLY ADAPTED FOR COMBUSTION CHAMBERS, e.g. FIREBRIDGES; DEVICES FOR DEFLECTING AIR, FLAMES OR COMBUSTION PRODUCTS IN COMBUSTION CHAMBERS; SAFETY ARRANGEMENTS SPECIALLY ADAPTED FOR COMBUSTION APPARATUS; DETAILS OF COMBUSTION CHAMBERS, NOT OTHERWISE PROVIDED FOR
- F23M5/00—Casings; Linings; Walls
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2251/00—Reactants
- B01D2251/10—Oxidants
- B01D2251/104—Ozone
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2251/00—Reactants
- B01D2251/10—Oxidants
- B01D2251/106—Peroxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2251/00—Reactants
- B01D2251/20—Reductants
- B01D2251/206—Ammonium compounds
- B01D2251/2062—Ammonia
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23D—BURNERS
- F23D2900/00—Special features of, or arrangements for burners using fluid fuels or solid fuels suspended in a carrier gas
- F23D2900/00016—Preventing or reducing deposit build-up on burner parts, e.g. from carbon
Definitions
- the present invention relates to improved systems and methods for the abatement of industrial effluent fluids, such as effluent gases produced in semiconductor manufacturing processes, while reducing the deposition of reaction products in the abatement systems.
- the gaseous effluents from the manufacturing of semiconductor materials, devices, products and memory articles involve a wide variety of chemical compounds used and produced in the process facility. These compounds include inorganic and organic compounds, breakdown products of photo-resist and other reagents, and a wide variety of other gases that must be removed from the waste gas before being vented from the process facility into the atmosphere.
- Semiconductor manufacturing processes utilize a variety of chemicals, many of which have extremely low human tolerance levels.
- Such materials include gaseous hydrides of antimony, arsenic, boron, germanium, nitrogen, phosphorous, silicon, selenium, silane, silane mixtures with phosphine, argon, hydrogen, organosilanes, halosilanes, halogens, organometallics and other organic compounds.
- Halogens e.g., fluorine (F 2 ) and other fluorinated compounds
- fluorine (F 2 ) and other fluorinated compounds are particularly problematic among the various components requiring abatement.
- the electronics industry uses perfluorinated compounds (PFCs) in wafer processing tools to remove residue from deposition steps and to etch thin films. PFCs are recognized to be strong contributors to global warming and the electronics industry is working to reduce the emissions of these gases.
- the most commonly used PFCs include, but are not limited to, CF 4 , C 2 F 6 , SF 6 , C 3 F 8 , C 4 H 8 , C 4 H 8 O and NF 3 .
- these PFCs are dissociated in a plasma to generate highly reactive fluoride ions and fluorine radicals, which do the actual cleaning and/or etching.
- the effluent from these processing operations include mostly fluorine, silicon tetrafluoride (SiF 4 ), hydrogen fluoride (HF), carbonyl fluoride (COF 2 ), CF 4 and C 2 F 6 .
- a thermal reactor for use during the abatement of a semiconductor manufacturing process.
- the thermal reactor includes a thermal reaction unit having (a) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; (b) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (c) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (d) a fluid delivery system adapted to provide a fluid to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber.
- At least one of the porous sections has one or more of (i) a property that varies within the porous section; and (ii) a property that differs from a property of at least one other porous section of the interior porous wall.
- a replacement part for use in an abatement system.
- the replacement part includes a stackable and replaceable porous chamber section having a plurality of features that allow the porous chamber section to be stacked with other porous chamber sections so as to form a porous wall that defines a central chamber for use during decomposition of gaseous waste from a semiconductor manufacturing process.
- the porous chamber section has sufficient porosity to allow transfer of fluid from outside the porous chamber section through the porous chamber section and into the central chamber during a decomposition process performed within the central chamber so as to reduce movement of reaction products toward an interior surface of the porous chamber section.
- the porous chamber section has a shape selected from the group consisting of round, elliptical, triangular, square, rectangular, polygonal pentagonal, hexagonal and octagonal. Further, the porous chamber section has one or more of (a) a property that varies within the porous chamber section; and (b) a property that differs from a property of at least one other porous chamber section of the porous wall.
- an apparatus for use in removing pollutants from a gas stream.
- the apparatus includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings.
- a first of the porous ceramic rings has a first coefficient of thermal expansion (CTE) and a second of the porous ceramic rings has a second CTE.
- CTE coefficient of thermal expansion
- an apparatus for use in removing pollutants from a gas stream.
- the apparatus includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings.
- a first of the porous ceramic rings has a first purity level and a second of the porous ceramic rings has a second purity level.
- an apparatus for use in removing pollutants from a gas stream.
- the apparatus includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings.
- a first of the porous ceramic rings has a first dopant level and a second of the porous ceramic rings has a second dopant level.
- an apparatus for use during the abatement of a semiconductor manufacturing process.
- the apparatus includes a thermal reaction unit having (a) an exterior wall having a plurality of perforations adapted to pass of a fluid therethrough; (b) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; (c) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (d) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (e) a fluid delivery system adapted to provide a fluid through the perforations of the exterior wall and to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber.
- the perforations in the exterior wall provide a pressure drop across the thermal reaction unit of about 0.1 to about 5 ps
- an apparatus for use during the abatement of a semiconductor manufacturing process.
- the apparatus includes a thermal reaction unit having (a) an exterior wall having a plurality of perforations adapted to pass of a fluid therethrough; (b) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; (c) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (d) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (e) a fluid delivery system adapted to provide a fluid through the perforations of the exterior wall and to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber.
- the fluid deliver system is adapted to provide at least one of water, steam, air, clean dry air, clean enriched air, oxygen enriched air, oxygen depleted air, inert gas, a reagent an oxidizer and depleted air.
- the fluid delivery system also is adapted to provide a fluid at a pressure of about 600 psig or less.
- a method for use during the abatement of a semiconductor manufacturing process.
- the method includes providing a thermal reaction unit having (a) an exterior wall having a plurality of perforations adapted to pass of a fluid therethrough; (b) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; (c) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (d) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (e) a fluid delivery system adapted to provide a fluid through the perforations of the exterior wall and to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber.
- the perforations in the exterior wall provide a pressure drop across the thermal reaction unit of about 0.1 to about 5
- a method for use during the abatement of a semiconductor manufacturing process.
- the method includes providing a thermal reaction unit having (a) an exterior wall having a plurality of perforations adapted to pass of a fluid therethrough; (b) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; (c) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (d) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (e) a fluid delivery system adapted to provide a fluid through the perforations of the exterior wall and to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber.
- the fluid deliver system is adapted to provide at least one of water, steam, air, clean dry air, clean enriched air, oxygen enriched air, oxygen depleted air, inert gas, a reagent, an oxidizer and depleted air.
- the fluid delivery system also is adapted to provide a fluid at a pressure of about 600 psig or less.
- the method also includes employing the thermal reaction unit to abate the semiconductor device manufacturing process.
- a system for manufacturing electronic devices.
- the system includes (a) a plurality of processing tools; (b) an abatement system for abating pollutants from the processing tools and having a plurality of inlet ports; and (c) a manifold for coupling pollutant outlet ports of the plurality of processing tools to the plurality of inlet ports of the abatement system.
- a system for manufacturing electronic devices.
- the system includes (a) a processing tool; (b) an abatement system for abating pollutants from the processing tool and including a plurality of chambers, each chamber including a plurality of inlet ports; and (c) a manifold for coupling a pollutant outlet port of the processing tool to the plurality of inlet ports of the abatement system.
- a system for manufacturing electronic devices.
- the system includes (a) a plurality of processing tools; and (b) an abatement system for abating pollutants from the processing tools,
- the abatement system includes a plurality of chambers, each including a plurality of inlet ports.
- the system also includes a manifold for selectively coupling pollutant outlet ports of the plurality of processing tools to the plurality of inlet ports of the chambers of the abatement system.
- an apparatus for use during the abatement of a semiconductor manufacturing process.
- the apparatus includes (a) a plurality of chambers, each chamber including a plurality of waste stream inlet ports; and (b) a manifold for selectively coupling pollutant outlet ports of a plurality of processing tools to the plurality of waste stream inlet ports of the chambers.
- an apparatus for use during the abatement of a semiconductor manufacturing process.
- the apparatus includes a thermal reaction unit having (a) an interior porous wall that defines a central chamber and formed from a plurality of stacked ceramic sections; (b) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (c) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (d) a fluid delivery system adapted to provide a fluid to the central chamber through the interior porous wall with sufficient pressure to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber.
- At least one of the stacked ceramic sections is adapted to allow sensing of a characteristic of contents of the central chamber
- an apparatus for use during the abatement of a semiconductor manufacturing process.
- the apparatus includes a thermal reaction unit having (a) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked ceramic sections; (b) at least one waste gas inlet in fluid communication with the central chamber, adapted to introduce a gaseous waste stream to the central chamber, and disposed so as to direct the gaseous waste stream away from the interior porous wall of the chamber; (d) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (e) a fluid delivery system adapted to provide a fluid to the central chamber through the interior porous wall with sufficient pressure to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber.
- FIG. 1 is a cut away view of a thermal reaction unit, inlet adaptor and lower quenching chamber that may be employed with the present invention.
- FIG. 2 is an elevational view of the interior plate of the inlet adaptor of FIG. 1 .
- FIG. 3 is a partial cut-away view of the inlet adaptor of FIG. 1 .
- FIG. 4 is a view of a center jet of FIG. 1 .
- FIG. 5 is a cut away view of the inlet adaptor and the thermal reaction unit of FIG. 1 .
- FIG. 6A is an elevational view of a ceramic ring of the thermal reaction unit of FIG. 1 .
- FIG. 6B is a partial cut-away view of the ceramic ring of FIG. 6A .
- FIG. 6C is a partial cut-away view of ceramic rings stacked upon one another to define the thermal reaction chamber of FIG. 1 .
- FIG. 7 is a view of the sections of a perforated metal shell that may be used in the chamber of FIG. 1 .
- FIG. 8 is an exterior view of an embodiment of the thermal reaction unit of FIG. 1 .
- FIG. 9 is a partial cut-away view of an exemplary inlet adaptor/thermal reaction unit joint for the reaction unit of FIG. 1 .
- FIG. 10 is a partial cut-away view of an exemplary shield that may be positioned between the thermal reaction unit and the lower quenching chamber of FIG. 1 .
- FIG. 11 A is a partial cut-away view of the thermal reaction unit in which the thermal reaction chamber is formed from a plurality of stacked, porous ceramic sections.
- FIG. 11B illustrates an embodiment of the thermal reaction chamber of FIG. 11A in which each ceramic section is formed from two ceramic subsections.
- FIG. 12 is a schematic diagram of an exemplary thermal reaction chamber defined by a plurality of ceramic sections.
- FIG. 13 is a top view of an exemplary embodiment of the thermal reaction unit in which inlet ports to the reaction chamber are angled.
- the present invention relates to methods and systems for providing controlled decomposition of effluent gases in a thermal reactor while reducing accumulation of deposition products within the system.
- the present invention further relates to an improved thermal reactor design to reduce thermal reaction unit cracking during the high temperature decomposition of effluent gases.
- Waste gas to be abated may include, for example, species generated by a semiconductor process and/or species that were delivered to and egressed from the semiconductor process without chemical alteration.
- semiconductor process is intended to be broadly construed to include any and all processing and unit operations in the manufacture of semiconductor products, flat panel displays and/or LCD products, as well as all operations involving treatment or processing of materials used in or produced by a semiconductor, flat panel display and/or LCD manufacturing facility, as well as all operations carried out in connection with the semiconductor, flat panel display and/or LCD manufacturing facility not involving active manufacturing (examples include conditioning of process equipment, purging of chemical delivery lines in preparation of operation, etch cleaning of process tool chambers, abatement of toxic or hazardous gases from effluents produced by the semiconductor, flat panel display and/or LCD manufacturing facility, etc.).
- U.S. patent application Ser. No. 10/987,921, filed Nov. 12, 2004 (Attorney Docket No. 723), which is hereby incorporated by reference herein in its entirety and referred to as “the '921 Application”) describes an improved thermal reaction system having a thermal reaction unit 30 and a lower quenching chamber 150 as shown in FIG. 1 .
- the thermal reaction unit 30 includes a thermal reaction chamber 32 , and an inlet adaptor 10 including a top plate 18 , at least one waste gas inlet 14 , at least one fuel inlet 17 , optionally at least one oxidant inlet 11 , burner jets 15 , a center jet 16 and an interior plate 12 which is positioned at or within the thermal reaction chamber 32 (see also FIG.
- the inlet adaptor includes the fuel and oxidant gas inlets to provide a fuel rich gas mixture to the system for the destruction of contaminants.
- the fuel and oxidant may be pre-mixed prior to introduction into the thermal reaction chamber.
- Fuels contemplated include, but are not limited to, hydrogen, methane, natural gas, propane, LPG and city gas, preferably natural gas.
- Oxidants contemplated include, but are limited to, oxygen, ozone, air, clean dry air (CDA) and oxygen-enriched air.
- Waste gases to be abated comprise a species selected from the group consisting of CF 4 , C 2 F 6 , SF 6 , C 3 F 8 , C 4 H 8 , C 4 H 8 O, SiF 4 , BF 3 , NF 3 , BH 3 , B 2 H 6 ,B 5 H 9 , NH 3 , PH 3 , SiH 4 , SeH 2 , F 2 , Cl 2 , HCl, HF, HBr, WF 6 , H 2 , Al(CH 3 ) 3 , primary and secondary amines, organosilanes, organometallics, and halosilanes.
- FIG. 2 represents an elevational view of the interior plate 12 , including the inlet ports 14 , burner jets 15 , a center jet port 16 and the reticulated ceramic foam 20 of the interior plate.
- the reticulated ceramic foam 20 has a plurality of pores disposed therethrough.
- the passage of fluids through the pores of the interior plate to the thermal reaction chamber 32 may reduce the deposition of particulate matter at the surface of the interior plate 12 and the walls of the thermal reaction unit 30 proximate to the interior plate 12 .
- the fluid may include any gas that is preferably pressurized to a suitable pressure, which upon diffusion through the material is sufficient to reduce deposition on the interior plate while not detrimentally affecting the abatement treatment in the thermal reaction chamber.
- Cases contemplated for passage through the pores of the interior plate 12 include air, CDA, oxygen-enriched air, oxygen, ozone and inert gases, e.g., Ar, N 2 , etc., and should be devoid of fuels.
- the fluid may be introduced in a continuous or a pulsating mode.
- the reticulated ceramic foam interior plate appears to help prevent particle buildup on the interior plate in part because the exposed planar surface area is reduced thereby reducing the amount of surface available for build-up, because the reticulation of the interior plate provides smaller attachment points for growing particulate matter which will depart the interior plate upon attainment of a critical mass and because the air passing through the pores of the interior plate forms a “boundary layer,” keeping particles from migrating to the surface for deposition thereon.
- Ceramic foam bodies have an open cell structure characterized by a plurality of interconnected voids surrounded by a web of ceramic structure. They exhibit excellent physical properties such as high strength, low thermal mass, high thermal shock resistance, and high resistance to corrosion at elevated temperatures.
- the voids may be uniformly distributed throughout the material and the voids are of a size that permits fluids to easily diffuse through the material.
- the ceramic foam bodies should not react appreciably with PFC's in the effluent to form highly volatile halogen species.
- the ceramic foam bodies may include alumina materials, magnesium oxide, refractory metal oxides such as ZrO 2 , silicon carbide and silicon nitride, preferably higher purity alumina materials, e.g., spinel, and yttria-doped alumina materials.
- the ceramic foam bodies are ceramic bodies formed from yttria-doped alumina materials and yttria-stabilized zirconia-alumina (YZA). The preparation of ceramic foam bodies is well within the knowledge of those skilled in the art.
- a fluid inlet passageway may be incorporated into the center jet 16 of the inlet adaptor 10 (see for example FIGS. 1, 3 and 5 for placement of the center jet in the inlet adaptor).
- An embodiment of the center jet 16 is illustrated in FIG. 4 , said center jet including a pilot injection manifold tube 24 , pilot ports 26 , a pilot flame protective plate 22 and a fastening means 28 , e.g., threading complementary to threading on the inlet adaptor, whereby the center jet and the inlet adaptor may be complementarily mated with one another in a leak-tight fashion.
- the pilot flame of the center jet 16 is used to ignite the burner jets 15 of the inlet adaptor.
- a bore-hole 25 Through the center of the center jet 16 is a bore-hole 25 through which a stream of high velocity fluid may be introduced to inject into the thermal reaction chamber 32 (see, e.g., FIG. 5 ). It is thought that the high velocity air alters the aerodynamics and pulls gaseous and/or particulate components of the thermal reaction chamber towards the center of the chamber thereby keeping the particulate matter from getting close to the top plate and the chamber walls proximate to the top plate.
- the high velocity fluid may include any gas sufficient to reduce deposition on the interior walls of the thermal reaction unit while not detrimentally affecting the abatement treatment in the thermal reaction chamber. Further, the fluid may be introduced in a continuous or a pulsating mode, preferably a continuous mode.
- Gases contemplated include air, CDA, oxygen-enriched air, oxygen, ozone and inert gases, e.g., Ar, N 2 , etc.
- the gas is CDA and may be oxygen-enriched.
- the high velocity fluid is heated prior to introduction into the thermal reaction chamber.
- the thermal reaction unit includes a porous ceramic cylinder design defining the thermal reaction chamber 32 .
- High velocity air may be directed through the pores of the thermal reaction unit 30 to at least partially reduce particle buildup on the interior walls of the thermal reaction unit.
- the ceramic cylinder includes at least two ceramic rings stacked upon one another, for example as illustrated in FIG. 6C . More preferably, the ceramic cylinder includes at least about two to about twenty rings stacked upon one another.
- the term “ring” is not limited to circular rings per se, but may also include rings of any polygonal or elliptical shape. Preferably, the rings are generally tubular in form.
- FIG. 6C is a partial cut-away view of the ceramic cylinder design showing the stacking of the individual ceramic rings 36 having a complimentary ship-lap joint design, wherein the stacked ceramic rings define the thermal reaction chamber 32 .
- the uppermost ceramic ring 40 is designed to accommodate the inlet adaptor.
- the joint design is not limited to lap joints but may also include beveled joints, butt joints, lap joints and tongue and groove joints. Gasketing or sealing means, e.g., GRAFOIL® or other high temperature materials, positioned between the stacked rings is contemplated, especially if the stacked ceramic rings are butt jointed.
- the joints between the stacked ceramic rings overlap, e.g., ship-lap, to prevent infrared radiation from escaping from the thermal reaction chamber.
- Each ceramic ring may be a circumferentially continuous ceramic ring or alternatively, may be at least two sections that may be joined together to make up the ceramic ring.
- FIG. 6A illustrates the latter embodiment, wherein the ceramic ring 36 includes a first arcuate section 38 and a second arcuate section 40 , and when the first and second arcuate sections are coupled together, a ring is formed that defines a portion of the thermal reaction chamber 32 .
- the ceramic rings are preferably formed of the same materials as the ceramic foam bodies discussed previously, e.g., YZA.
- the advantage of having a thermal reaction chamber defined by individual stacked ceramic rings includes the reduction of cracking of the ceramic rings of the chamber due to thermal shock and concomitantly a reduction of equipment costs. For example, if one ceramic ring cracks, the damaged ring may be readily replaced for a fraction of the cost and the thermal reactor placed back online immediately.
- FIG. 7 illustrates an embodiment of the perforated metal shell 10 , wherein the metal shell has the same general form of the stacked ceramic rings, e.g., a circular cylinder or a polygonal cylinder, and the metal shell includes at least two attachable sections 112 that may be joined together to make up the general form of the ceramic cylinder.
- the two attachable sections 112 include ribs 114 , e.g., clampable extensions 114 , which upon coupling put pressure on the ceramic rings thereby holding the rings to one another.
- the metal shell 110 has a perforated pattern whereby preferably more air is directed towards the top of the thermal reaction unit, e.g., the portion closer to the inlet adaptor 10 , than the bottom of the thermal reaction unit, e.g., the lower chamber (see FIGS. 7 and 8 ).
- the perforated pattern is the same throughout the metal shell.
- “perforations” may represent any array of openings through the metal shell that do not compromise the integrity and strength of the metal shell, while ensuring that the flow of axially directed air through the porous interior walls may be controlled.
- the perforations may be holes having circular, polygonal or elliptical shapes or in the alternative, the perforations may be slits of various lengths and widths.
- the perforations are holes 1/16′′ in diameter, and the perforation pattern towards the top of the thermal reaction unit has 1 hole per square inch, while the perforation pattern towards the bottom of the thermal reaction unit has 0.5 holes per square inch (in other words 2 holes per 4 square inches).
- the perforation area is about 0.1% to 1% of the area of the metal shell.
- the metal shell is constructed from corrosion-resistant metals including, but not limited to: stainless steel; austenitic nickel-chromium- iron alloys such as Inconel® 600, 601, 617, 625, 625 LCF, 706, 718, 718 SPF, X-750, MA754, 783, 792, and HX; and other nickel-based alloys such as Hastelloy B, B2, C, C22, C276, C2000, G, G2, G3 and G30.
- austenitic nickel-chromium- iron alloys such as Inconel® 600, 601, 617, 625, 625 LCF, 706, 718, 718 SPF, X-750, MA754, 783, 792, and HX
- other nickel-based alloys such as Hastelloy B, B2, C, C22, C276, C2000, G, G2, G3 and G30.
- the ceramic rings 36 are stacked upon one another, at least one layer of a fibrous blanket is wrapped around the exterior of the stacked ceramic rings and then the sections 112 of the metal shell 110 are positioned around the fibrous blanket and tightly attached together by coupling the ribs 114 .
- the fibrous blanket can be any fibrous inorganic material having a low thermal conductivity, high temperature capability and an ability to deal with the thermal expansion coefficient mismatch of the metal shell and the ceramic rings.
- Fibrous blanket material contemplated includes, but is not limited to, spinel fibers, glass wool and other materials comprising aluminum silicates.
- the fibrous blanket may be a soft ceramic sleeve.
- fluid flow is axially and controllably introduced through the perforations of the metal shell, the fibrous blanket and the reticulated ceramic rings of the cylinder.
- the fluid experiences a pressure drop from the exterior of the thermal reaction unit to the interior of the thermal reaction unit in a range from about 0.05 psi to about 0.30 psi, preferably about 0.1 psi to 0.2 psi.
- the fluid may be introduced in a continuous or a pulsating mode, preferably a continuous mode to reduce the recirculation of the fluid within the thermal reaction chamber.
- An increased residence time within the thermal reaction chamber, wherein the gases are recirculated results in the formation of larger particulate material and an increased probability of deposition within the reactor.
- the fluid may include any gas sufficient to reduce deposition on the interior walls of the ceramic rings while not detrimentally affecting the abatement treatment in the thermal reaction chamber.
- Gases contemplated include air, CDA, oxygen-enriched air, oxygen, ozone and inert gases, e.g., Ar, N 2 , etc.
- the entire thermal reaction unit 30 is encased within an outer stainless steel reactor shell 60 (see, e.g., FIG. 1 ), whereby an annular space 62 is created between the interior wall of the outer reactor shell 60 and the exterior wall of the thermal reaction unit 30 .
- Fluids to be introduced through the walls of the thermal reaction unit may be introduced at ports 64 positioned on the outer reactor shell 60 .
- the interior plate 12 of the inlet adaptor 10 is positioned at or within the thermal reaction chamber 32 of the thermal reaction unit 30 .
- a gasket or seal 42 is preferably positioned between the top ceramic ring 40 and the top plate 18 (see, e.g., FIG. 9 ).
- the gasket or seal 42 may be GRAFOIL® or some other high temperature material that will prevent leakage of blow-off air through the top plate/thermal reaction unit joint, i.e., to maintain a backpressure behind the ceramic rings for gas distribution.
- the water quenching means Downstream of the thermal reaction chamber is a water quenching means positioned in the lower quenching chamber 150 to capture the particulate matter that egresses from the thermal reaction chamber.
- the water quenching means may include a water curtain as disclosed in co-pending U.S. patent application Ser. No. 10/249,703 in the name of Glenn Tom et al., entitled “Gas Processing System Comprising a Water Curtain for Preventing Solids Deposition on Interior Walls Thereof,” which is hereby incorporated by reference in the entirety. Referring to FIG.
- the water for the water curtain is introduced at inlet 152 and water curtain 156 is formed, whereby the water curtain absorbs the heat of the combustion and decomposition reactions occurring in the thermal reaction unit 30 , eliminates build-up of particulate matter on the walls of the lower quenching chamber 150 , and absorbs water soluble gaseous products of the decomposition and combustion reactions, e.g., CO 2 , HF, etc.
- a shield 202 may be positioned between the bottom-most ceramic ring 198 and the water curtain in the lower chamber 150 .
- the shield is L-shaped and assumes the three-dimensional form of the bottom-most ceramic ring, e.g., a circular ring, so that water does not come in contact with the bottom-most ceramic ring.
- the shield may be constructed from any material that is water- and corrosion-resistant and thermally stable including, but not limited to: stainless steel; austenitic nickel-chromium-iron alloys such as Inconel® 600, 601, 617, 625, 625 LCF, 706, 718, 718 SPF, X-750, MA754, 783, 792, and HX; and other nickel-based alloys such as Hastelloy B, B2, C, C22, C276, C2000, G, G2, G3 and G30.
- austenitic nickel-chromium-iron alloys such as Inconel® 600, 601, 617, 625, 625 LCF, 706, 718, 718 SPF, X-750, MA754, 783, 792, and HX
- other nickel-based alloys such as Hastelloy B, B2, C, C22, C276, C2000, G, G2, G3 and G30.
- effluent gases enter the thermal reaction chamber 32 from at least one inlet provided in the inlet adaptor 10
- the fuel/oxidant mixture enter the thermal reaction chamber 32 from at least one burner jet 15 .
- the pilot flame of the center jet 16 is used to ignite the burner jets 15 of the inlet adaptor, creating thermal reaction unit temperatures in a range from about 500° C. to about 2000° C.
- the high temperatures facilitate decomposition of the effluent gases that are present within the thermal reaction chamber. It is also possible that some effluent gases undergo combustion/oxidation in the presence of the fuel/oxidant mixture.
- the pressure within the thermal reaction chamber is in a range from about 0.5 atm to about 5 atm, preferably slightly subatmospheric, e.g., about 0.98 atm to about 0.99 atm.
- a water curtain 156 may be used to cool the walls of the lower chamber and inhibit deposition of particulate matter on the walls. It is contemplated that some particulate matter and water soluble gases may be removed from the gas stream using the water curtain 156 . Further downstream of the water curtain, a water spraying means 154 may be positioned within the lower quenching chamber 150 to cool the gas stream, and remove the particulate matter and water soluble gases. Cooling the gas stream allows for the use of lower temperature materials downstream of the water spraying means thereby reducing material costs.
- Gases passing through the lower quenching chamber may be released to the atmosphere or alternatively may be directed to additional treatment units including, but not limited to, liquid/liquid scrubbing, physical and/or chemical adsorption, coal traps, electrostatic precipitators, and cyclones.
- additional treatment units including, but not limited to, liquid/liquid scrubbing, physical and/or chemical adsorption, coal traps, electrostatic precipitators, and cyclones.
- the concentration of the effluent gases is preferably below detection limits, e.g., less than 1 ppm.
- an “air knife” is positioned within the thermal reaction unit.
- fluid may be intermittently injected into the air knife inlet 206 , which is situated between the bottom-most ceramic ring 198 and the water quenching means in the lower quenching chamber 150 .
- the air knife inlet 206 may be incorporated into the shield 202 which prevents water from wetting the bottom-most ceramic ring 198 as described.
- the air knife fluid may include any gas sufficient to reduce deposition on the interior walls of the thermal reaction unit while not detrimentally affecting the decomposition treatment in said unit. Gases contemplated include air, CDA, oxygen-enriched air, oxygen, ozone and inert gases, e.g., Ar, N 2 , etc.
- gas is intermittently injected through the air knife inlet 206 and exits a very thin slit 204 that is positioned parallel to the interior wall of the thermal reaction chamber 32 .
- gases are directed upwards along the wall (in the direction of the arrows in FIG. 10 ) to force any deposited particulate matter from the surface of the interior wall
- FIG. 11A is a partial cut-away view of the thermal reaction chamber 32 in which the thermal reaction chamber 32 is formed from a plurality of stacked, porous ceramic sections 36 a - h. While eight stacked, porous ceramic sections are shown in FIG. 11A , it will be understood that fewer or more than eight stacked sections may be used. For example, in one particular embodiment, eleven porous ceramic sections may be used. In some embodiments, more or less than eleven porous ceramic sections may be used.
- the ceramic sections 36 a - h may be round, elliptical, triangular, square, rectangular, polygonal, pentagonal, hexagonal, octagonal, or otherwise shaped.
- the ceramic sections may include stackable washers, chevrons, rings or any other suitable shape and/or configuration. Rings may be any suitable shape (as described above such as round, elliptical, polygonal, etc.).
- At least one of the porous sections may include a non-rigid material.
- a porous section may include yttria doped aluminum fiber.
- at least one of the porous sections may include a ceramic, a sintered ceramic, a sintered metal, a porous metal material, doped aluminum fiber, glass and/or a porous polymeric material.
- At least one of the porous sections may include MgAl 2 O 4 , A 1 2 O 3 , SiC, and/or MgO.
- a doped ceramic also may be used such as a ceramic doped with yttria, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and/or any other suitable dopant.
- FIG. 11B illustrates an embodiment of the thermal reaction chamber 32 of FIG. 11A in which each ceramic section 36 a - h is formed from two ceramic subsections 1102 a, 1102 b.
- the first ceramic subsection 1102 a is sized so as to fit within and to bond to the second ceramic subsection 1102 b so as to form lap joints 1104 a - b.
- the lap joints 1104 a - b may be used to couple ceramic sections 36 a - h together as shown. Gluing or any other bonding technique may be used to couple ceramic subsections 1102 a, 1102 b together. Use of such bonded ceramic sections may reduce manufacturing costs.
- the thermal reaction chamber 32 may have a graded and/or varying coefficient of thermal expansion (CTE).
- CTE coefficient of thermal expansion
- the ceramic sections closest to the inlets of the reaction chamber 32 may have a smaller CTE than the ceramic sections further from the inlets.
- the first ceramic section 36 a (closest to the inlets) may have the smallest CTE and the eighth ceramic section 36 h (furthest from the inlets) may have the largest CTE.
- the remaining ceramic sections 36 b - g may have CTE's that range from, and in some embodiments decrease in value from, the highest CTE and the lowest CTE.
- the above embodiment may provide a cost savings for the thermal reaction chamber 32 as more expensive, lower CTE ceramics may be used close to the inlets of the reaction chamber 32 (e.g., where temperatures are the highest), and cheaper, higher CTE ceramics may be used in regions of the reaction chamber 32 that are subjected to lower temperatures.
- higher quality ceramics such as 99.99% Al2O3, that are more temperature and/or chemical resistant may be used for the ceramic section or sections closest to the inlets of the thermal reaction chamber 32
- lower quality ceramics such as 98% Al2O3, may be used for the ceramic sections further from the inlets of the thermal reaction chamber 32 .
- each ceramic section may be graded or otherwise vary.
- the CTE of a ceramic section may be graded so that portions of the ceramic section that experience the highest temperatures have the lowest CTE.
- each ceramic section may have a graded CTE that decreases from the top to the bottom of the ceramic section and/or from the inside to the outside of the ceramic section.
- the porosity, composition, dopant type and/or concentration, etc., of each ceramic section and/or between ceramic sections may be graded and/or vary.
- the pores may vary in size, shape, density, etc., within a ceramic section and/or between ceramic sections.
- the pores may be uniform in shape, tapered (e.g., with a larger opening on the inside or the outside of a section), or otherwise shaped. Multiple pore sizes may be used within a ceramic section (e.g., pores 2, 3, 4, etc., different diameters).
- a first porous section may have a first doping level and a second porous section may have a second, different doping level.
- higher dopant level porous sections may be used closest to the inlets of a thermal reaction chamber.
- at least one of a CTE, a purity level and a doping level of each porous section may be selected based on a temperature profile within a thermal reaction unit during abatement. Further, at least one of a CTE, a purity level and a doping level of each porous section may be selected so that expansion of each porous section is approximately equal within the thermal reaction unit during abatement.
- each ceramic ring may have a different CTE, purity level and/or dopant level.
- one or more of the ceramic sections may include or be adapted to accommodate and/or facilitate the use of one or more sensors (e.g., by having a void or other space for one or more sensors).
- one or more ceramic sections may include a temperature, NOX, pressure, radiation or other suitable sensor.
- One or more such sensors may be coupled to a controller and used to provide better control over or monitoring of an abatement process within the thermal reaction chamber 32 (e.g., via a feedback loop that allows adjustment of flow rates, gas concentrations, etc.).
- One or more ceramic sections alternatively or additionally may include one or more ports that allow gas to be flowed through the ceramic sections (e.g., during a purge operation) and/or that allow gas to be extracted from the thermal reaction chamber 32 (e.g., via a sampling operation). For example, periodic or random sampling of reaction gases and/or products may be performed through a port within a ceramic section (to allow analysis of a combustion process).
- FIG. 12 is a schematic diagram of an exemplary thermal reaction chamber 1200 defined by a plurality of ceramic sections 1202 a - f. Fewer or more ceramic sections may be used. Each ceramic section 1202 a - f includes a port 1204 a - f for purging and/or sampling the chamber 1200 . Additionally, each ceramic section 1202 a - f includes a sensor 1206 a - f for sensing a characteristic of the chamber 1200 (e.g., temperature, NOX level, etc.). Each port 1204 a - f and/or sensor 1206 a - f may be in communication with and/or controlled via a controller 1208 .
- the controller 1208 may include, for example, one or more microcontrollers, microprocessors, dedicated hardware, a combination of the same, etc. In at least one embodiment, the controller 1208 may use information gathered from the ports 1204 a - f and/or sensors 1206 a - f to control process parameters associated with the thermal reaction chamber 1200 (e.g., flow rates, gas concentrations, etc.).
- multiple processing tools may be abated using a single thermal abatement system, such as the thermal reaction chamber 30 and/or quenching unit 150 .
- a single thermal abatement system such as the thermal reaction chamber 30 and/or quenching unit 150 .
- 2, 3, 4, 5, 6, etc. processing tools may be so abated.
- multiple thermal abatement systems may service that same tool (e.g., for redundancy).
- two of the thermal abatement systems described herein may be used to abate three or more processing tools.
- each processing tool includes a redundant abatement system yet fewer than one abatement system per processing tool is required.
- Other similar configurations may be used (e.g., 3 abatement systems servicing 4, 5, 6, etc., processing tools).
- Additional inlets may be provided for each abatement system as required to service multiple processing tools (e.g., 2, 3, 4, 5, 6, 7, 8, 9, 10, etc., inlets).
- multiple abatement systems may service a single tool (e.g., 2, 3, 4, 5, etc., abatement systems per tool).
- the system may be configured with multiple processing tools serviced by multiple thermal abatement chambers; multiple processing tools serviced by a single thermal abatement chamber; and/or a single processing tool serviced by multiple thermal abatement chambers.
- one or more thermal abatement chambers may serve as secondary or back-up abatement chambers that are not used unless a primary thermal abatement chamber goes offline.
- a manifold may be used to selectively direct the waste to the active abatement chambers and away from the inactive chambers.
- the manifold may be operated under control of a system controller and may respond to feedback from the abatement chambers and/or information about the quantity and composition of the waste flow from the possessing tools and/or sensors in or upstream of the manifold.
- FIG. 13 is a top view of an exemplary embodiment of the thermal reaction unit 30 in which inlet ports 14 to the reaction chamber 32 are angled (e.g., relative to vertical) so as to direct effluent and/or other gasses away from inner wall 1300 of the reaction chamber 32 toward a central reaction zone 1302 .
- the inlet ports 14 also may be angled to create a turbulent and/or swirling combustion zone as shown. Exemplary angles for the inlet ports include 2 to 45 degrees from vertical, although other angles may be used.
- the inlet ports may be angled to direct the waste in a helical vortex pattern that maximizes the residence time of the waste in the reaction chamber to increase the combustion of all the waste.
- the angle of the inlet ports 14 may be adjustable based upon the desired helical vortex pattern for a given type of waste. For example, certain waste may benefit from a longer residence time while other types may not require a longer residence time and may be combusted most efficiently when introduced at a steeper (e.g., more downward) angle.
- the angle of the inlet ports 14 may be controlled by a system controller based upon feedback from the processing tools, sensors (e.g., temperature, pressure, flow, composition, etc.) in the manifold, and/or sensors in the reaction chamber 32 .
- the angle of the inlet ports 14 may be selected based upon sensor information or known information about the waste itself (e.g., quantity, composition, etc.) and/or the processes that generated the waste.
- the perforations in the metal shell provide a pressure drop across the thermal reaction unit of about 0.1 to about 5 psi. In one embodiment, about 22 stacked ceramic rings may be employed for the chamber 32 .
- a two-stage reactor for removing pollutants from gaseous streams may include an upper thermal reaction chamber and a lower reaction chamber.
- the upper thermal reaction chamber may include an outer exterior wall, an interior porous wall that defines a central decomposition and conversion chamber, at least one waste gas inlet in fluid communication with the central decomposition and conversion chamber for introducing a gaseous waste stream therein, thermal means for decomposing and converting the gaseous waste stream into reaction products, and means for introducing a fluid into the interior space.
- the interior porous wall may be adapted to allow transference of the fluid from the interior space into the central decomposition and conversion chamber at a sufficient force to reduce deposition of reaction products on the interior porous wall.
- the interior porous wall may also be positioned from the outer exterior wall a sufficient distance to define an interior space.
- the lower reaction chamber may include a gas flow chamber in fluid communication with the central decomposition and conversion chamber.
- the gas flow chamber may include an inlet and an outlet for passing the gaseous waste stream and reaction products therethrough.
- the lower reaction chamber may also include means for generating a downwardly flowing liquid film on interior surfaces of the gas flow chamber. The downwardly flowing liquid film may reduce deposition and accumulation of particulate solids on the lower reaction chamber.
- a water fall and/or spray jets may be employed to create the downwardly flowing liquid film.
- the interior space positioned between the outer exterior wall and the interior porous wall may be an interior annular space.
- the means for introducing a fluid into the interior space may be adapted to introduce pressurized fluid into the interior annular space.
- the means for introducing a fluid into the interior space may be adapted to introduce water, steam, air, clean dry air, clean enriched air, oxygen enriched air, oxygen depleted air (e.g., air with a lower than atmospheric percentage of oxygen), inert gas (e.g., N 2 ), depleted air or inert gas, and/or mixtures thereof.
- the means for introducing a fluid into the interior space may alternatively be adapted to introduce water alone or air alone.
- the means for introducing a fluid into the interior space may be adapted to introduce fluid into the interior space under pulsing conditions.
- the means for introducing a fluid into the interior space may also be adapted to inject fluid into the central decomposition and conversion chamber under periodic pulsing.
- the pulsing conditions may use a pulsation duration of from about 3 ms to 1 second.
- the two-stage reactor may be adapted such that the lower reaction chamber includes at least one oxidant inlet positioned to introduce an oxidant to the gas flow chamber.
- the two-stage reactor may also include at least one additional gas inlet for introducing a combustible fuel, reactants, and/or an oxidant for mixing with the gaseous waste stream.
- the reactor may also include a combustible fuel supply coupled to the at least one additional gas inlet, wherein the combustible fuel supply is adapted to supply oxygen, city gas, LPG, propane, methane, and/or hydrogen.
- the means for introducing a fluid into the interior space includes a liquid vortex positioned near the inlet of the gas flow chamber.
- the liquid vortex may include an outer shell having a top plate with a central opening in fluid communication with the central decomposition and conversion chamber.
- the conical-shaped baffle may be generally concentrically aligned with the inner surface of the outer shell to form a concentric chamber.
- the liquid vortex may also include a liquid inlet arranged to tangentially introduce liquid into the concentric chamber.
- the liquid may be introduced such that the concentric chamber is filled with liquid to create a swirling motion so that the liquid rises and overflows the conical-shaped baffle and forms a sheet of fluid on the inner surface of the conical-shaped baffle that flows downwardly onto the interior surface of the gas stream flow chamber.
- the sheet of fluid on the inner surface of the conical-shaped baffle may inhibit an entering gas stream from contacting the interior surface of the gas stream flow chamber thereby resisting deposition of reaction products thereon.
- the interior porous wall may be fabricated of a material that includes ceramic, sintered ceramic, sintered metal, porous metal material, a porous polymeric material, glass, and/or blends and/or combinations thereof.
- the interior porous wall may include pores uniformly distributed in the porous material. In other embodiments, the pores may be distributed with a varying density including on a gradient.
- the outer exterior wall and the interior porous wall may be separated by a sufficient distance to provide an annular space and for distributing a pressured gas for passage through the interior porous wall.
- the reaction chamber may operate at a pressure that is lower than atmospheric pressure.
- the interior porous wall may include a plurality of apertures for passage of a pressurized gas through the interior porous wall into the central decomposition and conversion chamber.
- the plurality of apertures may include conical shaped protuberances.
- the means for introducing a fluid into the interior space may be adapted to introduce fluid that is compressed to a suitable pressure to facilitate pulsating ejection of the fluid with a force sufficient to reduce particle deposition on the inner surface of the central decomposition and conversion chamber.
- the pressure may be from about 60 psig to about 100 psig.
- the invention may include an abatement system for controlled decomposition and conversion of gaseous pollutants in a gaseous waste stream.
- the system may include an upper thermal reaction chamber and a lower reaction chamber.
- the upper thermal reaction chamber may include an outer exterior wall, an interior porous wall that defines a central decomposition and conversion chamber, means for introducing a fluid to the interior annular space, thermal means for decomposing and converting the gaseous waste stream to form reaction products, and at least one waste gas inlet for conducting the gaseous waste stream into the upper thermal reactor.
- the interior porous wall may be positioned from the outer exterior wall a sufficient distance to define an interior annular space.
- the lower reaction chamber may include a gas flow chamber in fluid communication with the central decomposition and conversion chamber, and at least one oxidant inlet positioned to introduce an oxidant to the gas stream flow chamber.
- the waste gas inlet may include a conduit that terminates within the central decomposition and conversion chamber.
- the portion of the conduit that terminates within the central decomposition and conversion chamber may be located within a tube which projects beyond the end of the conduit to define a chamber within the tube for flame formation.
- the tube may have an open end in fluid communication with the central decomposition and conversion chamber.
- the lower reaction chamber may include a liquid vortex positioned between the central decomposition and conversion chamber and the gas flow chamber.
- the liquid vortex may include an outer shell with a top plate, a conical-shaped baffle within the outer shell, and a liquid inlet.
- the outer shell may include a central opening in fluid communication with the central decomposition and conversion chamber.
- the conical-shaped baffle within the outer shell may include an inner surface and a central opening which is generally aligned with the interior surface of the gas stream flow chamber.
- the conical-shaped baffle may generally be concentrically aligned with the inner surface of the outer shell to form a concentric chamber.
- the liquid inlet may be arranged to tangentially introduce liquid into the concentric chamber.
- the liquid may be introduced so as to fill the concentric chamber with liquid, creating a swirling motion, and causing the liquid to rise and overflow the conical-shaped baffle into the gas stream flow chamber.
- the overflowing liquid may thus form a sheet of fluid on the inner surface of the conical-shaped baffle that flows downwardly onto the interior surface of the gas stream flow chamber.
- the interior porous wall may provide for transference of the fluid from the interior annular space into the central decomposition and conversion chamber at a sufficient force to reduce deposition of reaction products on the interior porous wall.
- the interior porous wall may have a porosity of less than about 20%.
- the means for introducing a fluid to the interior annular space may be adapted to introduce pressurized fluid into the annular space.
- the means for introducing a fluid may be adapted to introduce fluid including water, steam, air, clean dry air, clean enriched air, oxygen enriched air, oxygen depleted air (e.g., air with a lower than atmospheric percentage of oxygen), inert gas (e.g., N 2 ), depleted air or inert gas, and/or mixtures thereof.
- the means for introducing a fluid into the interior space may alternatively be adapted to introduce water alone or air alone.
- the means for introducing a fluid to the interior annular space may be adapted to inject steam through the interior porous wall.
- the means for introducing a fluid to the interior annular space may be adapted to introduce fluid under pulsing conditions.
- a fluid deliver system or other means for introducing a fluid to the interior annular space may be adapted to provide at least one of water, steam, air, clean dry air, clean enriched air, oxygen enriched air, oxygen depleted air, inert gas, a reagent, an oxidizer and depleted air.
- the fluid delivery system or other means may be adapted to provide at least one of ozone, hydrogen peroxide and ammonia.
- the abatement system may further include one or more additional gas inlets for introducing a combustible fuel, reactants, and/or an oxidant for mixing with the gaseous waste stream.
- the abatement system may also include a combustible fuel supply coupled to the at least one additional gas inlet.
- the combustible fuel supply may be adapted to supply oxygen, butane, ethanol, LPG, city gas, natural gas, propane, methane, hydrogen, 13A and/or mixtures thereof.
- the invention may also include methods for controlled decomposition and conversion of gaseous pollutants in a gaseous waste steam in a two-stage thermal reactor.
- the methods may include introducing the gaseous waste stream to an upper thermal reactor through at least one waste gas inlet, providing at least one combustible fuel for mixing with the gaseous waste stream to form a fuel rich combustible gas stream mixture, igniting the fuel rich combustible gas stream mixture in a decomposition and conversion chamber to effect formation of reaction products, injecting an additional fluid into the decomposition and conversion chamber through a porous wall of the decomposition and conversion chamber contemporaneously with the decomposing and converting of the fuel rich combustible gas stream mixture, wherein the additional fluid is injected at a force exceeding that of reaction products approaching an interior surface of the decomposition and conversion chamber thereby inhibiting deposition of the reaction products thereon, flowing the reaction products into a lower reaction chamber, flowing water along a portion of an interior surface of the lower reaction chamber, and flowing the reaction products through the
- injecting an additional fluid into the decomposition and conversion chamber through a porous wall of the decomposition and conversion chamber may include pulsing the additional fluid through the porous wall.
- the methods may further include introducing an air containing gas into the reaction products so as to form a fuel lean mixture.
- Flowing water along a portion of an interior surface of the lower reaction chamber may include employing a water vortex.
- the invention may further include an apparatus for use during the abatement of a semiconductor manufacturing process.
- the apparatus may include a thermal reaction chamber with an interior porous wall that defines a central decomposition and conversion chamber, at least one waste gas inlet in fluid communication with the central decomposition and conversion chamber and adapted to introduce a gaseous waste stream to the central decomposition and conversion chamber, a thermal mechanism positioned within the central decomposition and conversion chamber and adapted to combust the gaseous waste stream within the central decomposition and conversion chamber, thereby forming reaction products; and a fluid delivery system adapted to provide a fluid to the central decomposition and conversion chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central decomposition and conversion chamber.
- the apparatus may further include an outer wall that surrounds the interior porous wall and that defines an interior space between the outer wall and the interior porous wall.
- the fluid delivery system may be adapted to provide a fluid to the central decomposition and conversion chamber through the interior porous wall by providing fluid to the interior space between the outer wall and the interior porous wall.
- the central decomposition and conversion chamber may be cylindrical.
- the fluid delivery system may be adapted to provide water, air, clean dry air, depleted air and/or clean enriched air to the central decomposition and conversion chamber through the interior porous wall.
- the fluid delivery system may also be adapted to provide fluid to the central decomposition and conversion chamber through the interior porous wall by pulsing the fluid. The pulsing may be periodic.
- the fluid delivery system may be adapted to provide fluid to the central decomposition and conversion chamber through the interior porous wall at a pressure of less than about 600 psig and, in some embodiments, at a pressure less than about 100 psig. In some embodiments, the fluid delivery system may be adapted to provide a fluid at a pressure of about 50 psig to about 100 psig, about 5 psig to about 50 psig, or about 1/10 psig to about 5 psig. Other pressure ranges may be used.
- the fluid delivery system may be adapted to provide a fluid to the central decomposition and conversion chamber through the interior porous wall so as to form a non-deposition zone adjacent the interior surface of the central decomposition and conversion chamber.
- the fluid delivery system may also include a plurality of inlets adapted to deliver fluid along a length of an exterior surface of the interior porous wall.
- the interior porous wall may include pores shaped so as to provide passage of fluid into the central decomposition and conversion chamber while reducing backflow of any fluid or reaction products from the central decomposition and conversion chamber.
- the interior porous wall may include a porous ceramic.
- the wall may include pores shaped so as to provide passage of fluid into the central decomposition and conversion chamber while reducing backflow of any fluid or reaction products from the central decomposition and conversion chamber.
- the thermal reaction chamber may include a plurality of waste gas inlets.
- the thermal reaction chamber may include at least four or six waste gas inlets.
- the inlets may be angled and/or directed so as to introduce turbulent flow to prevent deposition on the sidewalls of the chamber.
- the apparatus may further include a second reaction chamber coupled to the thermal reaction chamber.
- the second reaction chamber may include a gas flow chamber in fluid communication with the central decomposition and conversion chamber.
- the gas flow chamber may have an inlet and outlet for passing the gaseous waste stream and reaction products through the gas flow chamber.
- the second reaction chamber may also include a water delivery system adapted to generate a flowing liquid film on an interior surface of the gas flow chamber so as to reduce deposition and accumulation of particulate solids on the interior surface of the gas flow chamber.
- the water delivery system may be adapted to cool the interior surface of the gas flow chamber. In some embodiments, the water delivery system may be adapted to generate a vortex of cooling water.
- the second reaction chamber may be located below the thermal reaction chamber. The second reaction chamber may also include at least one inlet adapted to introduce an oxidant to the gaseous waste stream.
- the invention may be embodied as an apparatus for use during the abatement of a semiconductor manufacturing process.
- the apparatus may include an upper reaction chamber and a lower reaction chamber.
- the upper reaction chamber may include an interior porous wall that defines a central decomposition and conversion chamber, an outer wall that surrounds the interior porous wall and that defines an interior space between the outer wall and the interior porous wall, at least one waste gas inlet in fluid communication with the central decomposition and conversion chamber and adapted to introduce a gaseous waste stream to the central decomposition and conversion chamber, a thermal mechanism positioned within the central decomposition and conversion chamber and adapted to combust the gaseous waste stream within the central decomposition and conversion chamber to thereby form reaction products, and a fluid delivery system adapted to provide a fluid to the central decomposition and conversion chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central decomposition and conversion chamber.
- the lower reaction chamber may be coupled to the upper reaction chamber.
- the lower reaction chamber may include a gas flow chamber in fluid communication with the central decomposition and conversion chamber, the gas flow chamber having an inlet and outlet for passing the gaseous waste stream and reaction products through the gas flow chamber.
- the lower reaction chamber may also include a water delivery system adapted to generate a flowing liquid film on an interior surface of the gas flow chamber so as to reduce deposition and accumulation of particulate solids on the interior surface of the gas flow chamber.
- the lower reaction chamber may also include an inlet adapted to introduce an oxidant to the gaseous waste stream.
- the invention may also include a replaceable liner for a thermal reaction chamber.
- the replaceable liner may be modular, porous, and constructed of ceramic or other similar materials.
- the porous ceramic liner may have a shape that defines a central decomposition and conversion chamber for use during decomposition and conversion of gaseous waste from a semiconductor manufacturing process.
- the porous ceramic liner or wall may have sufficient porosity to allow transfer of fluid from outside the porous ceramic wall, through the porous ceramic wall, and into the central decomposition and conversion chamber during a decomposition and conversion process performed within the central decomposition and conversion chamber so as to reduce movement of reaction products toward an interior surface of the porous ceramic wall or liner.
- the porous ceramic wall/liner may include pores shaped so as to provide passage of fluid into the central decomposition and conversion chamber defined by the porous ceramic wall while reducing backflow of any fluid or reaction products from the central decomposition and conversion chamber.
- the porous ceramic wall may include ceramic, sintered ceramic, MgAl 2 O 4 , Al 2 O 3 , SiC, MgO, and/or any combination thereof.
- the invention may alternatively include a porous material wall having a shape that defines a central decomposition and conversion chamber for use during decomposition and conversion of gaseous waste from a semiconductor manufacturing process.
- the porous material wall may have sufficient porosity to allow transfer of fluid from outside the porous material wall through the porous material wall and into the central decomposition and conversion chamber during a decomposition and conversion process performed within the central decomposition and conversion chamber so as to reduce movement of reaction products toward an interior surface of the porous material wall.
- the porous material wall may comprise a sintered ceramic, sintered metal, porous metal material, a porous polymeric material, and/or a combination thereof.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Biomedical Technology (AREA)
- Analytical Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Treating Waste Gases (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Incineration Of Waste (AREA)
Abstract
In certain embodiments, an apparatus is provided for use in removing pollutants from a gas stream. The apparatus may include one or more thermal reaction units formed from a plurality of stacked porous ceramic rings. The thermal reaction units may be selectively coupled to one or more process tools. In some embodiments a manifold may be used to direct waste effluent toward online primary thermal reaction units and away from back-up thermal reaction units. If a primary thermal reaction unit goes off-line, the manifold may redirect waste effluent toward one or more of the back-up thermal reaction units. Numerous other aspects are provided.
Description
- The present application claims priority from U.S. Provisional Patent Application Ser. No. 60/731,719, filed Oct. 31, 2005, which is hereby incorporated by reference herein in its entirety.
- The present invention relates to improved systems and methods for the abatement of industrial effluent fluids, such as effluent gases produced in semiconductor manufacturing processes, while reducing the deposition of reaction products in the abatement systems.
- The gaseous effluents from the manufacturing of semiconductor materials, devices, products and memory articles involve a wide variety of chemical compounds used and produced in the process facility. These compounds include inorganic and organic compounds, breakdown products of photo-resist and other reagents, and a wide variety of other gases that must be removed from the waste gas before being vented from the process facility into the atmosphere.
- Semiconductor manufacturing processes utilize a variety of chemicals, many of which have extremely low human tolerance levels. Such materials include gaseous hydrides of antimony, arsenic, boron, germanium, nitrogen, phosphorous, silicon, selenium, silane, silane mixtures with phosphine, argon, hydrogen, organosilanes, halosilanes, halogens, organometallics and other organic compounds.
- Halogens, e.g., fluorine (F2) and other fluorinated compounds, are particularly problematic among the various components requiring abatement. The electronics industry uses perfluorinated compounds (PFCs) in wafer processing tools to remove residue from deposition steps and to etch thin films. PFCs are recognized to be strong contributors to global warming and the electronics industry is working to reduce the emissions of these gases. The most commonly used PFCs include, but are not limited to, CF4, C2F6, SF6, C3F8, C4H8, C4H8O and NF3. In practice, these PFCs are dissociated in a plasma to generate highly reactive fluoride ions and fluorine radicals, which do the actual cleaning and/or etching. The effluent from these processing operations include mostly fluorine, silicon tetrafluoride (SiF4), hydrogen fluoride (HF), carbonyl fluoride (COF2), CF4 and C2F6.
- Improved methods and apparatus for abating such effluent streams are desired.
- In certain embodiments, a thermal reactor is provided for use during the abatement of a semiconductor manufacturing process. The thermal reactor includes a thermal reaction unit having (a) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; (b) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (c) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (d) a fluid delivery system adapted to provide a fluid to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber. At least one of the porous sections has one or more of (i) a property that varies within the porous section; and (ii) a property that differs from a property of at least one other porous section of the interior porous wall.
- In certain embodiments, a replacement part is provided for use in an abatement system. The replacement part includes a stackable and replaceable porous chamber section having a plurality of features that allow the porous chamber section to be stacked with other porous chamber sections so as to form a porous wall that defines a central chamber for use during decomposition of gaseous waste from a semiconductor manufacturing process. The porous chamber section has sufficient porosity to allow transfer of fluid from outside the porous chamber section through the porous chamber section and into the central chamber during a decomposition process performed within the central chamber so as to reduce movement of reaction products toward an interior surface of the porous chamber section. The porous chamber section has a shape selected from the group consisting of round, elliptical, triangular, square, rectangular, polygonal pentagonal, hexagonal and octagonal. Further, the porous chamber section has one or more of (a) a property that varies within the porous chamber section; and (b) a property that differs from a property of at least one other porous chamber section of the porous wall.
- In certain embodiments, an apparatus is provided for use in removing pollutants from a gas stream. The apparatus includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings. A first of the porous ceramic rings has a first coefficient of thermal expansion (CTE) and a second of the porous ceramic rings has a second CTE.
- In certain embodiments, an apparatus is provided for use in removing pollutants from a gas stream. The apparatus includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings. A first of the porous ceramic rings has a first purity level and a second of the porous ceramic rings has a second purity level.
- In certain embodiments, an apparatus is provided for use in removing pollutants from a gas stream. The apparatus includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings. A first of the porous ceramic rings has a first dopant level and a second of the porous ceramic rings has a second dopant level.
- In certain embodiments, an apparatus is provided for use during the abatement of a semiconductor manufacturing process. The apparatus includes a thermal reaction unit having (a) an exterior wall having a plurality of perforations adapted to pass of a fluid therethrough; (b) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; (c) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (d) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (e) a fluid delivery system adapted to provide a fluid through the perforations of the exterior wall and to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber. The perforations in the exterior wall provide a pressure drop across the thermal reaction unit of about 0.1 to about 5 psi.
- In certain embodiments, an apparatus is provided for use during the abatement of a semiconductor manufacturing process. The apparatus includes a thermal reaction unit having (a) an exterior wall having a plurality of perforations adapted to pass of a fluid therethrough; (b) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; (c) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (d) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (e) a fluid delivery system adapted to provide a fluid through the perforations of the exterior wall and to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber. The fluid deliver system is adapted to provide at least one of water, steam, air, clean dry air, clean enriched air, oxygen enriched air, oxygen depleted air, inert gas, a reagent an oxidizer and depleted air. The fluid delivery system also is adapted to provide a fluid at a pressure of about 600 psig or less.
- In certain embodiments, a method is provided for use during the abatement of a semiconductor manufacturing process. The method includes providing a thermal reaction unit having (a) an exterior wall having a plurality of perforations adapted to pass of a fluid therethrough; (b) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; (c) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (d) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (e) a fluid delivery system adapted to provide a fluid through the perforations of the exterior wall and to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber. The perforations in the exterior wall provide a pressure drop across the thermal reaction unit of about 0.1 to about 5 psi. The method also includes employing the thermal reaction unit to abate the semiconductor device manufacturing process.
- In certain embodiments, a method is provided for use during the abatement of a semiconductor manufacturing process. The method includes providing a thermal reaction unit having (a) an exterior wall having a plurality of perforations adapted to pass of a fluid therethrough; (b) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; (c) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (d) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (e) a fluid delivery system adapted to provide a fluid through the perforations of the exterior wall and to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber. The fluid deliver system is adapted to provide at least one of water, steam, air, clean dry air, clean enriched air, oxygen enriched air, oxygen depleted air, inert gas, a reagent, an oxidizer and depleted air. The fluid delivery system also is adapted to provide a fluid at a pressure of about 600 psig or less. The method also includes employing the thermal reaction unit to abate the semiconductor device manufacturing process.
- In certain embodiments, a system is provided for manufacturing electronic devices. The system includes (a) a plurality of processing tools; (b) an abatement system for abating pollutants from the processing tools and having a plurality of inlet ports; and (c) a manifold for coupling pollutant outlet ports of the plurality of processing tools to the plurality of inlet ports of the abatement system.
- In certain embodiments, a system is provided for manufacturing electronic devices. The system includes (a) a processing tool; (b) an abatement system for abating pollutants from the processing tool and including a plurality of chambers, each chamber including a plurality of inlet ports; and (c) a manifold for coupling a pollutant outlet port of the processing tool to the plurality of inlet ports of the abatement system.
- In certain embodiments, a system is provided for manufacturing electronic devices. The system includes (a) a plurality of processing tools; and (b) an abatement system for abating pollutants from the processing tools, The abatement system includes a plurality of chambers, each including a plurality of inlet ports. The system also includes a manifold for selectively coupling pollutant outlet ports of the plurality of processing tools to the plurality of inlet ports of the chambers of the abatement system.
- In certain embodiments, an apparatus is provided for use during the abatement of a semiconductor manufacturing process. The apparatus includes (a) a plurality of chambers, each chamber including a plurality of waste stream inlet ports; and (b) a manifold for selectively coupling pollutant outlet ports of a plurality of processing tools to the plurality of waste stream inlet ports of the chambers.
- In certain embodiments, an apparatus is provided for use during the abatement of a semiconductor manufacturing process. The apparatus includes a thermal reaction unit having (a) an interior porous wall that defines a central chamber and formed from a plurality of stacked ceramic sections; (b) at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; (c) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (d) a fluid delivery system adapted to provide a fluid to the central chamber through the interior porous wall with sufficient pressure to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber. At least one of the stacked ceramic sections is adapted to allow sensing of a characteristic of contents of the central chamber
- In certain embodiments, an apparatus is provided for use during the abatement of a semiconductor manufacturing process. The apparatus includes a thermal reaction unit having (a) an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked ceramic sections; (b) at least one waste gas inlet in fluid communication with the central chamber, adapted to introduce a gaseous waste stream to the central chamber, and disposed so as to direct the gaseous waste stream away from the interior porous wall of the chamber; (d) a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and (e) a fluid delivery system adapted to provide a fluid to the central chamber through the interior porous wall with sufficient pressure to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber.
- Other features and aspects of the present invention will become more fully apparent from the following detailed description, the appended claims and the accompanying drawings.
-
FIG. 1 is a cut away view of a thermal reaction unit, inlet adaptor and lower quenching chamber that may be employed with the present invention. -
FIG. 2 is an elevational view of the interior plate of the inlet adaptor ofFIG. 1 . -
FIG. 3 is a partial cut-away view of the inlet adaptor ofFIG. 1 . -
FIG. 4 is a view of a center jet ofFIG. 1 . -
FIG. 5 is a cut away view of the inlet adaptor and the thermal reaction unit ofFIG. 1 . -
FIG. 6A is an elevational view of a ceramic ring of the thermal reaction unit ofFIG. 1 . -
FIG. 6B is a partial cut-away view of the ceramic ring ofFIG. 6A . -
FIG. 6C is a partial cut-away view of ceramic rings stacked upon one another to define the thermal reaction chamber ofFIG. 1 . -
FIG. 7 is a view of the sections of a perforated metal shell that may be used in the chamber ofFIG. 1 . -
FIG. 8 is an exterior view of an embodiment of the thermal reaction unit ofFIG. 1 . -
FIG. 9 is a partial cut-away view of an exemplary inlet adaptor/thermal reaction unit joint for the reaction unit ofFIG. 1 . -
FIG. 10 is a partial cut-away view of an exemplary shield that may be positioned between the thermal reaction unit and the lower quenching chamber ofFIG. 1 . -
FIG. 11 A is a partial cut-away view of the thermal reaction unit in which the thermal reaction chamber is formed from a plurality of stacked, porous ceramic sections. -
FIG. 11B illustrates an embodiment of the thermal reaction chamber ofFIG. 11A in which each ceramic section is formed from two ceramic subsections. -
FIG. 12 is a schematic diagram of an exemplary thermal reaction chamber defined by a plurality of ceramic sections. -
FIG. 13 is a top view of an exemplary embodiment of the thermal reaction unit in which inlet ports to the reaction chamber are angled. - The present invention relates to methods and systems for providing controlled decomposition of effluent gases in a thermal reactor while reducing accumulation of deposition products within the system. The present invention further relates to an improved thermal reactor design to reduce thermal reaction unit cracking during the high temperature decomposition of effluent gases.
- Waste gas to be abated may include, for example, species generated by a semiconductor process and/or species that were delivered to and egressed from the semiconductor process without chemical alteration. As used herein, the term “semiconductor process” is intended to be broadly construed to include any and all processing and unit operations in the manufacture of semiconductor products, flat panel displays and/or LCD products, as well as all operations involving treatment or processing of materials used in or produced by a semiconductor, flat panel display and/or LCD manufacturing facility, as well as all operations carried out in connection with the semiconductor, flat panel display and/or LCD manufacturing facility not involving active manufacturing (examples include conditioning of process equipment, purging of chemical delivery lines in preparation of operation, etch cleaning of process tool chambers, abatement of toxic or hazardous gases from effluents produced by the semiconductor, flat panel display and/or LCD manufacturing facility, etc.).
- U.S. patent application Ser. No. 10/987,921, filed Nov. 12, 2004 (Attorney Docket No. 723), which is hereby incorporated by reference herein in its entirety and referred to as “the '921 Application”) describes an improved thermal reaction system having a
thermal reaction unit 30 and alower quenching chamber 150 as shown inFIG. 1 . Thethermal reaction unit 30 includes athermal reaction chamber 32, and aninlet adaptor 10 including atop plate 18, at least onewaste gas inlet 14, at least onefuel inlet 17, optionally at least oneoxidant inlet 11,burner jets 15, acenter jet 16 and aninterior plate 12 which is positioned at or within the thermal reaction chamber 32 (see alsoFIG. 3 for a schematic of the inlet adaptor independent of the thermal reaction unit). The inlet adaptor includes the fuel and oxidant gas inlets to provide a fuel rich gas mixture to the system for the destruction of contaminants. When oxidant is used, the fuel and oxidant may be pre-mixed prior to introduction into the thermal reaction chamber. Fuels contemplated include, but are not limited to, hydrogen, methane, natural gas, propane, LPG and city gas, preferably natural gas. Oxidants contemplated include, but are limited to, oxygen, ozone, air, clean dry air (CDA) and oxygen-enriched air. Waste gases to be abated comprise a species selected from the group consisting of CF4, C2F6, SF6, C3F8, C4H8, C4H8O, SiF4, BF3, NF3, BH3, B2H6,B5H9, NH3, PH3, SiH4, SeH2, F2, Cl2, HCl, HF, HBr, WF6, H2, Al(CH3)3, primary and secondary amines, organosilanes, organometallics, and halosilanes. - Prior art inlet adaptors have included limited porosity ceramic plates as the interior plate of the inlet adaptor. A disadvantage of these limited porosity interior plates includes the accumulation of particles on said surface, eventually leading to inlet port clogging and flame detection error. The invention of the '921 Application overcomes these disadvantages by using, in some embodiments, a reticulated ceramic foam as the
interior plate 12.FIG. 2 represents an elevational view of theinterior plate 12, including theinlet ports 14,burner jets 15, acenter jet port 16 and the reticulatedceramic foam 20 of the interior plate. The reticulatedceramic foam 20 has a plurality of pores disposed therethrough. As such, the passage of fluids through the pores of the interior plate to thethermal reaction chamber 32 may reduce the deposition of particulate matter at the surface of theinterior plate 12 and the walls of thethermal reaction unit 30 proximate to theinterior plate 12. The fluid may include any gas that is preferably pressurized to a suitable pressure, which upon diffusion through the material is sufficient to reduce deposition on the interior plate while not detrimentally affecting the abatement treatment in the thermal reaction chamber. Cases contemplated for passage through the pores of theinterior plate 12 include air, CDA, oxygen-enriched air, oxygen, ozone and inert gases, e.g., Ar, N2, etc., and should be devoid of fuels. Further, the fluid may be introduced in a continuous or a pulsating mode. - The reticulated ceramic foam interior plate appears to help prevent particle buildup on the interior plate in part because the exposed planar surface area is reduced thereby reducing the amount of surface available for build-up, because the reticulation of the interior plate provides smaller attachment points for growing particulate matter which will depart the interior plate upon attainment of a critical mass and because the air passing through the pores of the interior plate forms a “boundary layer,” keeping particles from migrating to the surface for deposition thereon.
- Ceramic foam bodies have an open cell structure characterized by a plurality of interconnected voids surrounded by a web of ceramic structure. They exhibit excellent physical properties such as high strength, low thermal mass, high thermal shock resistance, and high resistance to corrosion at elevated temperatures. The voids may be uniformly distributed throughout the material and the voids are of a size that permits fluids to easily diffuse through the material. The ceramic foam bodies should not react appreciably with PFC's in the effluent to form highly volatile halogen species. The ceramic foam bodies may include alumina materials, magnesium oxide, refractory metal oxides such as ZrO2, silicon carbide and silicon nitride, preferably higher purity alumina materials, e.g., spinel, and yttria-doped alumina materials. Most preferably, the ceramic foam bodies are ceramic bodies formed from yttria-doped alumina materials and yttria-stabilized zirconia-alumina (YZA). The preparation of ceramic foam bodies is well within the knowledge of those skilled in the art.
- To further reduce particle build-up on the
interior plate 12, a fluid inlet passageway may be incorporated into thecenter jet 16 of the inlet adaptor 10 (see for exampleFIGS. 1, 3 and 5 for placement of the center jet in the inlet adaptor). An embodiment of thecenter jet 16 is illustrated inFIG. 4 , said center jet including a pilot injectionmanifold tube 24,pilot ports 26, a pilot flameprotective plate 22 and a fastening means 28, e.g., threading complementary to threading on the inlet adaptor, whereby the center jet and the inlet adaptor may be complementarily mated with one another in a leak-tight fashion. The pilot flame of thecenter jet 16 is used to ignite theburner jets 15 of the inlet adaptor. Through the center of thecenter jet 16 is a bore-hole 25 through which a stream of high velocity fluid may be introduced to inject into the thermal reaction chamber 32 (see, e.g.,FIG. 5 ). It is thought that the high velocity air alters the aerodynamics and pulls gaseous and/or particulate components of the thermal reaction chamber towards the center of the chamber thereby keeping the particulate matter from getting close to the top plate and the chamber walls proximate to the top plate. The high velocity fluid may include any gas sufficient to reduce deposition on the interior walls of the thermal reaction unit while not detrimentally affecting the abatement treatment in the thermal reaction chamber. Further, the fluid may be introduced in a continuous or a pulsating mode, preferably a continuous mode. Gases contemplated include air, CDA, oxygen-enriched air, oxygen, ozone and inert gases, e.g., Ar, N2, etc. Preferably, the gas is CDA and may be oxygen-enriched. In another embodiment, the high velocity fluid is heated prior to introduction into the thermal reaction chamber. - In yet another embodiment, the thermal reaction unit includes a porous ceramic cylinder design defining the
thermal reaction chamber 32. High velocity air may be directed through the pores of thethermal reaction unit 30 to at least partially reduce particle buildup on the interior walls of the thermal reaction unit. The ceramic cylinder includes at least two ceramic rings stacked upon one another, for example as illustrated inFIG. 6C . More preferably, the ceramic cylinder includes at least about two to about twenty rings stacked upon one another. The term “ring” is not limited to circular rings per se, but may also include rings of any polygonal or elliptical shape. Preferably, the rings are generally tubular in form. -
FIG. 6C is a partial cut-away view of the ceramic cylinder design showing the stacking of the individual ceramic rings 36 having a complimentary ship-lap joint design, wherein the stacked ceramic rings define thethermal reaction chamber 32. The uppermostceramic ring 40 is designed to accommodate the inlet adaptor. It is noted that the joint design is not limited to lap joints but may also include beveled joints, butt joints, lap joints and tongue and groove joints. Gasketing or sealing means, e.g., GRAFOIL® or other high temperature materials, positioned between the stacked rings is contemplated, especially if the stacked ceramic rings are butt jointed. Preferably, the joints between the stacked ceramic rings overlap, e.g., ship-lap, to prevent infrared radiation from escaping from the thermal reaction chamber. - Each ceramic ring may be a circumferentially continuous ceramic ring or alternatively, may be at least two sections that may be joined together to make up the ceramic ring.
FIG. 6A illustrates the latter embodiment, wherein theceramic ring 36 includes a firstarcuate section 38 and a secondarcuate section 40, and when the first and second arcuate sections are coupled together, a ring is formed that defines a portion of thethermal reaction chamber 32. The ceramic rings are preferably formed of the same materials as the ceramic foam bodies discussed previously, e.g., YZA. - The advantage of having a thermal reaction chamber defined by individual stacked ceramic rings includes the reduction of cracking of the ceramic rings of the chamber due to thermal shock and concomitantly a reduction of equipment costs. For example, if one ceramic ring cracks, the damaged ring may be readily replaced for a fraction of the cost and the thermal reactor placed back online immediately.
- The ceramic rings are held to another to form the
thermal reaction unit 30 whereby high velocity air may be directed through the pores of the ceramic rings of the thermal reaction unit to at least partially reduce particle buildup at the interior walls of the thermal reaction unit. Towards that end, a perforated metal shell may be used to encase the stacked ceramic rings of the thermal reaction unit as well as control the flow of axially directed air through the porous interior walls of the thermal reaction unit.FIG. 7 illustrates an embodiment of theperforated metal shell 10, wherein the metal shell has the same general form of the stacked ceramic rings, e.g., a circular cylinder or a polygonal cylinder, and the metal shell includes at least twoattachable sections 112 that may be joined together to make up the general form of the ceramic cylinder. The twoattachable sections 112 includeribs 114, e.g.,clampable extensions 114, which upon coupling put pressure on the ceramic rings thereby holding the rings to one another. - The
metal shell 110 has a perforated pattern whereby preferably more air is directed towards the top of the thermal reaction unit, e.g., the portion closer to theinlet adaptor 10, than the bottom of the thermal reaction unit, e.g., the lower chamber (seeFIGS. 7 and 8 ). In the alternative, the perforated pattern is the same throughout the metal shell. As defined herein, “perforations” may represent any array of openings through the metal shell that do not compromise the integrity and strength of the metal shell, while ensuring that the flow of axially directed air through the porous interior walls may be controlled. For example, the perforations may be holes having circular, polygonal or elliptical shapes or in the alternative, the perforations may be slits of various lengths and widths. In one embodiment, the perforations areholes 1/16″ in diameter, and the perforation pattern towards the top of the thermal reaction unit has 1 hole per square inch, while the perforation pattern towards the bottom of the thermal reaction unit has 0.5 holes per square inch (in other words 2 holes per 4 square inches). Preferably, the perforation area is about 0.1% to 1% of the area of the metal shell. The metal shell is constructed from corrosion-resistant metals including, but not limited to: stainless steel; austenitic nickel-chromium- iron alloys such as Inconel® 600, 601, 617, 625, 625 LCF, 706, 718, 718 SPF, X-750, MA754, 783, 792, and HX; and other nickel-based alloys such as Hastelloy B, B2, C, C22, C276, C2000, G, G2, G3 and G30. - Referring to
FIG. 8 , the ceramic rings 36 are stacked upon one another, at least one layer of a fibrous blanket is wrapped around the exterior of the stacked ceramic rings and then thesections 112 of themetal shell 110 are positioned around the fibrous blanket and tightly attached together by coupling theribs 114. The fibrous blanket can be any fibrous inorganic material having a low thermal conductivity, high temperature capability and an ability to deal with the thermal expansion coefficient mismatch of the metal shell and the ceramic rings. Fibrous blanket material contemplated includes, but is not limited to, spinel fibers, glass wool and other materials comprising aluminum silicates. In the alternative, the fibrous blanket may be a soft ceramic sleeve. - In practice, fluid flow is axially and controllably introduced through the perforations of the metal shell, the fibrous blanket and the reticulated ceramic rings of the cylinder. The fluid experiences a pressure drop from the exterior of the thermal reaction unit to the interior of the thermal reaction unit in a range from about 0.05 psi to about 0.30 psi, preferably about 0.1 psi to 0.2 psi. The fluid may be introduced in a continuous or a pulsating mode, preferably a continuous mode to reduce the recirculation of the fluid within the thermal reaction chamber. An increased residence time within the thermal reaction chamber, wherein the gases are recirculated, results in the formation of larger particulate material and an increased probability of deposition within the reactor. The fluid may include any gas sufficient to reduce deposition on the interior walls of the ceramic rings while not detrimentally affecting the abatement treatment in the thermal reaction chamber. Gases contemplated include air, CDA, oxygen-enriched air, oxygen, ozone and inert gases, e.g., Ar, N2, etc.
- To introduce fluid to the walls of the thermal reaction unit for passage through to the
thermal reaction chamber 32, the entirethermal reaction unit 30 is encased within an outer stainless steel reactor shell 60 (see, e.g.,FIG. 1 ), whereby anannular space 62 is created between the interior wall of theouter reactor shell 60 and the exterior wall of thethermal reaction unit 30. Fluids to be introduced through the walls of the thermal reaction unit may be introduced atports 64 positioned on theouter reactor shell 60. - Referring to
FIG. 1 , theinterior plate 12 of theinlet adaptor 10 is positioned at or within thethermal reaction chamber 32 of thethermal reaction unit 30. To ensure that gases within the thermal reaction unit do not leak from the region where the inlet adaptor contacts the thermal reaction unit, a gasket or seal 42 is preferably positioned between the topceramic ring 40 and the top plate 18 (see, e.g.,FIG. 9 ). The gasket or seal 42 may be GRAFOIL® or some other high temperature material that will prevent leakage of blow-off air through the top plate/thermal reaction unit joint, i.e., to maintain a backpressure behind the ceramic rings for gas distribution. - Downstream of the thermal reaction chamber is a water quenching means positioned in the
lower quenching chamber 150 to capture the particulate matter that egresses from the thermal reaction chamber. The water quenching means may include a water curtain as disclosed in co-pending U.S. patent application Ser. No. 10/249,703 in the name of Glenn Tom et al., entitled “Gas Processing System Comprising a Water Curtain for Preventing Solids Deposition on Interior Walls Thereof,” which is hereby incorporated by reference in the entirety. Referring toFIG. 1 , the water for the water curtain is introduced atinlet 152 andwater curtain 156 is formed, whereby the water curtain absorbs the heat of the combustion and decomposition reactions occurring in thethermal reaction unit 30, eliminates build-up of particulate matter on the walls of thelower quenching chamber 150, and absorbs water soluble gaseous products of the decomposition and combustion reactions, e.g., CO2, HF, etc. - To ensure that the bottom-most ceramic ring does not get wet, a shield 202 (see, e.g.,
FIG. 12 ) may be positioned between the bottom-mostceramic ring 198 and the water curtain in thelower chamber 150. Preferably, the shield is L-shaped and assumes the three-dimensional form of the bottom-most ceramic ring, e.g., a circular ring, so that water does not come in contact with the bottom-most ceramic ring. The shield may be constructed from any material that is water- and corrosion-resistant and thermally stable including, but not limited to: stainless steel; austenitic nickel-chromium-iron alloys such as Inconel® 600, 601, 617, 625, 625 LCF, 706, 718, 718 SPF, X-750, MA754, 783, 792, and HX; and other nickel-based alloys such as Hastelloy B, B2, C, C22, C276, C2000, G, G2, G3 and G30. - In practice, effluent gases enter the
thermal reaction chamber 32 from at least one inlet provided in theinlet adaptor 10, and the fuel/oxidant mixture enter thethermal reaction chamber 32 from at least oneburner jet 15. The pilot flame of thecenter jet 16 is used to ignite theburner jets 15 of the inlet adaptor, creating thermal reaction unit temperatures in a range from about 500° C. to about 2000° C. The high temperatures facilitate decomposition of the effluent gases that are present within the thermal reaction chamber. It is also possible that some effluent gases undergo combustion/oxidation in the presence of the fuel/oxidant mixture. The pressure within the thermal reaction chamber is in a range from about 0.5 atm to about 5 atm, preferably slightly subatmospheric, e.g., about 0.98 atm to about 0.99 atm. - Following decomposition/combustion, the effluent gases pass to the
lower chamber 150 wherein awater curtain 156 may be used to cool the walls of the lower chamber and inhibit deposition of particulate matter on the walls. It is contemplated that some particulate matter and water soluble gases may be removed from the gas stream using thewater curtain 156. Further downstream of the water curtain, a water spraying means 154 may be positioned within thelower quenching chamber 150 to cool the gas stream, and remove the particulate matter and water soluble gases. Cooling the gas stream allows for the use of lower temperature materials downstream of the water spraying means thereby reducing material costs. Gases passing through the lower quenching chamber may be released to the atmosphere or alternatively may be directed to additional treatment units including, but not limited to, liquid/liquid scrubbing, physical and/or chemical adsorption, coal traps, electrostatic precipitators, and cyclones. Following passage through the thermal reaction unit and the lower quenching chamber, the concentration of the effluent gases is preferably below detection limits, e.g., less than 1 ppm. - In an alternative embodiment, an “air knife” is positioned within the thermal reaction unit. Referring to
FIG. 10 , fluid may be intermittently injected into theair knife inlet 206, which is situated between the bottom-mostceramic ring 198 and the water quenching means in thelower quenching chamber 150. Theair knife inlet 206 may be incorporated into theshield 202 which prevents water from wetting the bottom-mostceramic ring 198 as described. The air knife fluid may include any gas sufficient to reduce deposition on the interior walls of the thermal reaction unit while not detrimentally affecting the decomposition treatment in said unit. Gases contemplated include air, CDA, oxygen-enriched air, oxygen, ozone and inert gases, e.g., Ar, N2, etc. In operation, gas is intermittently injected through theair knife inlet 206 and exits a verythin slit 204 that is positioned parallel to the interior wall of thethermal reaction chamber 32. Thus, gases are directed upwards along the wall (in the direction of the arrows inFIG. 10 ) to force any deposited particulate matter from the surface of the interior wall - In accordance with the present invention, improvements are provided to the
thermal reaction unit 30 ofFIG. 1 . For example,FIG. 11A is a partial cut-away view of thethermal reaction chamber 32 in which thethermal reaction chamber 32 is formed from a plurality of stacked, porousceramic sections 36 a-h. While eight stacked, porous ceramic sections are shown inFIG. 11A , it will be understood that fewer or more than eight stacked sections may be used. For example, in one particular embodiment, eleven porous ceramic sections may be used. In some embodiments, more or less than eleven porous ceramic sections may be used. Theceramic sections 36 a-h may be round, elliptical, triangular, square, rectangular, polygonal, pentagonal, hexagonal, octagonal, or otherwise shaped. The ceramic sections may include stackable washers, chevrons, rings or any other suitable shape and/or configuration. Rings may be any suitable shape (as described above such as round, elliptical, polygonal, etc.). - In one or more embodiments, at least one of the porous sections may include a non-rigid material. For example, a porous section may include yttria doped aluminum fiber. As another example, in some embodiments, at least one of the porous sections may include a ceramic, a sintered ceramic, a sintered metal, a porous metal material, doped aluminum fiber, glass and/or a porous polymeric material.
- In a particular embodiment, at least one of the porous sections may include MgAl2O4, A1 2O3, SiC, and/or MgO. A doped ceramic also may be used such as a ceramic doped with yttria, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and/or any other suitable dopant.
-
FIG. 11B illustrates an embodiment of thethermal reaction chamber 32 ofFIG. 11A in which eachceramic section 36 a-h is formed from twoceramic subsections 1102 a, 1102 b. The firstceramic subsection 1102 a is sized so as to fit within and to bond to the second ceramic subsection 1102 b so as to form lap joints 1104 a-b. The lap joints 1104 a-b may be used to coupleceramic sections 36 a-h together as shown. Gluing or any other bonding technique may be used to coupleceramic subsections 1102 a, 1102 b together. Use of such bonded ceramic sections may reduce manufacturing costs. - In at least one embodiment, the
thermal reaction chamber 32 may have a graded and/or varying coefficient of thermal expansion (CTE). For example, the ceramic sections closest to the inlets of the reaction chamber 32 (the top of the reaction unit inFIG. 11A ) may have a smaller CTE than the ceramic sections further from the inlets. In one particular embodiment, the first ceramic section 36 a (closest to the inlets) may have the smallest CTE and the eighthceramic section 36 h (furthest from the inlets) may have the largest CTE. The remaining ceramic sections 36 b-gmay have CTE's that range from, and in some embodiments decrease in value from, the highest CTE and the lowest CTE. The above embodiment may provide a cost savings for thethermal reaction chamber 32 as more expensive, lower CTE ceramics may be used close to the inlets of the reaction chamber 32 (e.g., where temperatures are the highest), and cheaper, higher CTE ceramics may be used in regions of thereaction chamber 32 that are subjected to lower temperatures. - In the same or another embodiment, higher quality ceramics, such as 99.99% Al2O3, that are more temperature and/or chemical resistant may be used for the ceramic section or sections closest to the inlets of the
thermal reaction chamber 32, while lower quality ceramics, such as 98% Al2O3, may be used for the ceramic sections further from the inlets of thethermal reaction chamber 32. - In the same or another embodiment, the CTE of each ceramic section may be graded or otherwise vary. For example, the CTE of a ceramic section may be graded so that portions of the ceramic section that experience the highest temperatures have the lowest CTE. In the embodiment of
FIG. 11A , for instance, each ceramic section may have a graded CTE that decreases from the top to the bottom of the ceramic section and/or from the inside to the outside of the ceramic section. - In the same or another embodiment, the porosity, composition, dopant type and/or concentration, etc., of each ceramic section and/or between ceramic sections may be graded and/or vary. Likewise, the pores may vary in size, shape, density, etc., within a ceramic section and/or between ceramic sections. Also, the pores may be uniform in shape, tapered (e.g., with a larger opening on the inside or the outside of a section), or otherwise shaped. Multiple pore sizes may be used within a ceramic section (e.g., pores 2, 3, 4, etc., different diameters).
- In one or more embodiments, a first porous section may have a first doping level and a second porous section may have a second, different doping level. For example, higher dopant level porous sections may be used closest to the inlets of a thermal reaction chamber. In some embodiments, at least one of a CTE, a purity level and a doping level of each porous section may be selected based on a temperature profile within a thermal reaction unit during abatement. Further, at least one of a CTE, a purity level and a doping level of each porous section may be selected so that expansion of each porous section is approximately equal within the thermal reaction unit during abatement. In one or more embodiments, each ceramic ring may have a different CTE, purity level and/or dopant level.
- In yet other embodiments, one or more of the ceramic sections may include or be adapted to accommodate and/or facilitate the use of one or more sensors (e.g., by having a void or other space for one or more sensors). For example, one or more ceramic sections may include a temperature, NOX, pressure, radiation or other suitable sensor. One or more such sensors may be coupled to a controller and used to provide better control over or monitoring of an abatement process within the thermal reaction chamber 32 (e.g., via a feedback loop that allows adjustment of flow rates, gas concentrations, etc.). One or more ceramic sections alternatively or additionally may include one or more ports that allow gas to be flowed through the ceramic sections (e.g., during a purge operation) and/or that allow gas to be extracted from the thermal reaction chamber 32 (e.g., via a sampling operation). For example, periodic or random sampling of reaction gases and/or products may be performed through a port within a ceramic section (to allow analysis of a combustion process).
-
FIG. 12 is a schematic diagram of an exemplarythermal reaction chamber 1200 defined by a plurality of ceramic sections 1202 a-f. Fewer or more ceramic sections may be used. Each ceramic section 1202 a-f includes a port 1204 a-ffor purging and/or sampling thechamber 1200. Additionally, each ceramic section 1202 a-f includes a sensor 1206 a-f for sensing a characteristic of the chamber 1200 (e.g., temperature, NOX level, etc.). Each port 1204 a-f and/or sensor 1206 a-f may be in communication with and/or controlled via acontroller 1208. Thecontroller 1208 may include, for example, one or more microcontrollers, microprocessors, dedicated hardware, a combination of the same, etc. In at least one embodiment, thecontroller 1208 may use information gathered from the ports 1204 a-f and/or sensors 1206 a-f to control process parameters associated with the thermal reaction chamber 1200 (e.g., flow rates, gas concentrations, etc.). - In one or more embodiments, multiple processing tools (e.g., cluster or similar tools) may be abated using a single thermal abatement system, such as the
thermal reaction chamber 30 and/or quenchingunit 150. For example, 2, 3, 4, 5, 6, etc., processing tools may be so abated. Likewise, multiple thermal abatement systems may service that same tool (e.g., for redundancy). For example, two of the thermal abatement systems described herein may be used to abate three or more processing tools. In this manner, each processing tool includes a redundant abatement system yet fewer than one abatement system per processing tool is required. Other similar configurations may be used (e.g., 3 abatement systems servicing 4, 5, 6, etc., processing tools). Additional inlets may be provided for each abatement system as required to service multiple processing tools (e.g., 2, 3, 4, 5, 6, 7, 8, 9, 10, etc., inlets). Also, multiple abatement systems may service a single tool (e.g., 2, 3, 4, 5, etc., abatement systems per tool). Thus, the system may be configured with multiple processing tools serviced by multiple thermal abatement chambers; multiple processing tools serviced by a single thermal abatement chamber; and/or a single processing tool serviced by multiple thermal abatement chambers. In some embodiments where the capacity of the thermal abatement chambers exceeds the pollutant output load, one or more thermal abatement chambers may serve as secondary or back-up abatement chambers that are not used unless a primary thermal abatement chamber goes offline. In such embodiments, a manifold may be used to selectively direct the waste to the active abatement chambers and away from the inactive chambers. The manifold may be operated under control of a system controller and may respond to feedback from the abatement chambers and/or information about the quantity and composition of the waste flow from the possessing tools and/or sensors in or upstream of the manifold. -
FIG. 13 is a top view of an exemplary embodiment of thethermal reaction unit 30 in whichinlet ports 14 to thereaction chamber 32 are angled (e.g., relative to vertical) so as to direct effluent and/or other gasses away frominner wall 1300 of thereaction chamber 32 toward acentral reaction zone 1302. Theinlet ports 14 also may be angled to create a turbulent and/or swirling combustion zone as shown. Exemplary angles for the inlet ports include 2 to 45 degrees from vertical, although other angles may be used. The inlet ports may be angled to direct the waste in a helical vortex pattern that maximizes the residence time of the waste in the reaction chamber to increase the combustion of all the waste. In some embodiments, the angle of theinlet ports 14 may be adjustable based upon the desired helical vortex pattern for a given type of waste. For example, certain waste may benefit from a longer residence time while other types may not require a longer residence time and may be combusted most efficiently when introduced at a steeper (e.g., more downward) angle. The angle of theinlet ports 14 may be controlled by a system controller based upon feedback from the processing tools, sensors (e.g., temperature, pressure, flow, composition, etc.) in the manifold, and/or sensors in thereaction chamber 32. The angle of theinlet ports 14 may be selected based upon sensor information or known information about the waste itself (e.g., quantity, composition, etc.) and/or the processes that generated the waste. - In some embodiments, the perforations in the metal shell provide a pressure drop across the thermal reaction unit of about 0.1 to about 5 psi. In one embodiment, about 22 stacked ceramic rings may be employed for the
chamber 32. - A two-stage reactor for removing pollutants from gaseous streams may include an upper thermal reaction chamber and a lower reaction chamber. The upper thermal reaction chamber may include an outer exterior wall, an interior porous wall that defines a central decomposition and conversion chamber, at least one waste gas inlet in fluid communication with the central decomposition and conversion chamber for introducing a gaseous waste stream therein, thermal means for decomposing and converting the gaseous waste stream into reaction products, and means for introducing a fluid into the interior space. The interior porous wall may be adapted to allow transference of the fluid from the interior space into the central decomposition and conversion chamber at a sufficient force to reduce deposition of reaction products on the interior porous wall. The interior porous wall may also be positioned from the outer exterior wall a sufficient distance to define an interior space.
- The lower reaction chamber may include a gas flow chamber in fluid communication with the central decomposition and conversion chamber. The gas flow chamber may include an inlet and an outlet for passing the gaseous waste stream and reaction products therethrough. The lower reaction chamber may also include means for generating a downwardly flowing liquid film on interior surfaces of the gas flow chamber. The downwardly flowing liquid film may reduce deposition and accumulation of particulate solids on the lower reaction chamber. In some embodiments, a water fall and/or spray jets may be employed to create the downwardly flowing liquid film.
- The interior space positioned between the outer exterior wall and the interior porous wall may be an interior annular space. The means for introducing a fluid into the interior space may be adapted to introduce pressurized fluid into the interior annular space. The means for introducing a fluid into the interior space may be adapted to introduce water, steam, air, clean dry air, clean enriched air, oxygen enriched air, oxygen depleted air (e.g., air with a lower than atmospheric percentage of oxygen), inert gas (e.g., N2), depleted air or inert gas, and/or mixtures thereof. The means for introducing a fluid into the interior space may alternatively be adapted to introduce water alone or air alone. In some embodiments, the means for introducing a fluid into the interior space may be adapted to introduce fluid into the interior space under pulsing conditions. The means for introducing a fluid into the interior space may also be adapted to inject fluid into the central decomposition and conversion chamber under periodic pulsing. In some embodiments, the pulsing conditions may use a pulsation duration of from about 3 ms to 1 second.
- The two-stage reactor may be adapted such that the lower reaction chamber includes at least one oxidant inlet positioned to introduce an oxidant to the gas flow chamber. The two-stage reactor may also include at least one additional gas inlet for introducing a combustible fuel, reactants, and/or an oxidant for mixing with the gaseous waste stream. The reactor may also include a combustible fuel supply coupled to the at least one additional gas inlet, wherein the combustible fuel supply is adapted to supply oxygen, city gas, LPG, propane, methane, and/or hydrogen.
- In some embodiments, the means for introducing a fluid into the interior space includes a liquid vortex positioned near the inlet of the gas flow chamber. The liquid vortex may include an outer shell having a top plate with a central opening in fluid communication with the central decomposition and conversion chamber. There may be a conical-shaped baffle within the outer shell having an inner surface and a central opening which is generally aligned with the interior surface of the gas stream flow chamber. The conical-shaped baffle may be generally concentrically aligned with the inner surface of the outer shell to form a concentric chamber. The liquid vortex may also include a liquid inlet arranged to tangentially introduce liquid into the concentric chamber. The liquid may be introduced such that the concentric chamber is filled with liquid to create a swirling motion so that the liquid rises and overflows the conical-shaped baffle and forms a sheet of fluid on the inner surface of the conical-shaped baffle that flows downwardly onto the interior surface of the gas stream flow chamber. The sheet of fluid on the inner surface of the conical-shaped baffle may inhibit an entering gas stream from contacting the interior surface of the gas stream flow chamber thereby resisting deposition of reaction products thereon.
- In some embodiments, the interior porous wall may be fabricated of a material that includes ceramic, sintered ceramic, sintered metal, porous metal material, a porous polymeric material, glass, and/or blends and/or combinations thereof. The interior porous wall may include pores uniformly distributed in the porous material. In other embodiments, the pores may be distributed with a varying density including on a gradient.
- In some embodiments, the outer exterior wall and the interior porous wall may be separated by a sufficient distance to provide an annular space and for distributing a pressured gas for passage through the interior porous wall. The reaction chamber may operate at a pressure that is lower than atmospheric pressure.
- The interior porous wall may include a plurality of apertures for passage of a pressurized gas through the interior porous wall into the central decomposition and conversion chamber. The plurality of apertures may include conical shaped protuberances.
- The means for introducing a fluid into the interior space may be adapted to introduce fluid that is compressed to a suitable pressure to facilitate pulsating ejection of the fluid with a force sufficient to reduce particle deposition on the inner surface of the central decomposition and conversion chamber. In some embodiments, the pressure may be from about 60 psig to about 100 psig.
- In some embodiments, the invention may include an abatement system for controlled decomposition and conversion of gaseous pollutants in a gaseous waste stream. The system may include an upper thermal reaction chamber and a lower reaction chamber. The upper thermal reaction chamber may include an outer exterior wall, an interior porous wall that defines a central decomposition and conversion chamber, means for introducing a fluid to the interior annular space, thermal means for decomposing and converting the gaseous waste stream to form reaction products, and at least one waste gas inlet for conducting the gaseous waste stream into the upper thermal reactor. The interior porous wall may be positioned from the outer exterior wall a sufficient distance to define an interior annular space.
- The lower reaction chamber may include a gas flow chamber in fluid communication with the central decomposition and conversion chamber, and at least one oxidant inlet positioned to introduce an oxidant to the gas stream flow chamber.
- The waste gas inlet may include a conduit that terminates within the central decomposition and conversion chamber. The portion of the conduit that terminates within the central decomposition and conversion chamber may be located within a tube which projects beyond the end of the conduit to define a chamber within the tube for flame formation. The tube may have an open end in fluid communication with the central decomposition and conversion chamber.
- The lower reaction chamber may include a liquid vortex positioned between the central decomposition and conversion chamber and the gas flow chamber. The liquid vortex may include an outer shell with a top plate, a conical-shaped baffle within the outer shell, and a liquid inlet. The outer shell may include a central opening in fluid communication with the central decomposition and conversion chamber. The conical-shaped baffle within the outer shell may include an inner surface and a central opening which is generally aligned with the interior surface of the gas stream flow chamber. The conical-shaped baffle may generally be concentrically aligned with the inner surface of the outer shell to form a concentric chamber. The liquid inlet may be arranged to tangentially introduce liquid into the concentric chamber. The liquid may be introduced so as to fill the concentric chamber with liquid, creating a swirling motion, and causing the liquid to rise and overflow the conical-shaped baffle into the gas stream flow chamber. The overflowing liquid may thus form a sheet of fluid on the inner surface of the conical-shaped baffle that flows downwardly onto the interior surface of the gas stream flow chamber.
- The interior porous wall may provide for transference of the fluid from the interior annular space into the central decomposition and conversion chamber at a sufficient force to reduce deposition of reaction products on the interior porous wall. The interior porous wall may have a porosity of less than about 20%.
- In some embodiments, the means for introducing a fluid to the interior annular space may be adapted to introduce pressurized fluid into the annular space. The means for introducing a fluid may be adapted to introduce fluid including water, steam, air, clean dry air, clean enriched air, oxygen enriched air, oxygen depleted air (e.g., air with a lower than atmospheric percentage of oxygen), inert gas (e.g., N2), depleted air or inert gas, and/or mixtures thereof. The means for introducing a fluid into the interior space may alternatively be adapted to introduce water alone or air alone. For example, the means for introducing a fluid to the interior annular space may be adapted to inject steam through the interior porous wall. In addition, the means for introducing a fluid to the interior annular space may be adapted to introduce fluid under pulsing conditions.
- some embodiments, a fluid deliver system or other means for introducing a fluid to the interior annular space may be adapted to provide at least one of water, steam, air, clean dry air, clean enriched air, oxygen enriched air, oxygen depleted air, inert gas, a reagent, an oxidizer and depleted air. In one or more embodiments, the fluid delivery system or other means may be adapted to provide at least one of ozone, hydrogen peroxide and ammonia.
- The abatement system may further include one or more additional gas inlets for introducing a combustible fuel, reactants, and/or an oxidant for mixing with the gaseous waste stream. The abatement system may also include a combustible fuel supply coupled to the at least one additional gas inlet. The combustible fuel supply may be adapted to supply oxygen, butane, ethanol, LPG, city gas, natural gas, propane, methane, hydrogen, 13A and/or mixtures thereof.
- The invention may also include methods for controlled decomposition and conversion of gaseous pollutants in a gaseous waste steam in a two-stage thermal reactor. The methods may include introducing the gaseous waste stream to an upper thermal reactor through at least one waste gas inlet, providing at least one combustible fuel for mixing with the gaseous waste stream to form a fuel rich combustible gas stream mixture, igniting the fuel rich combustible gas stream mixture in a decomposition and conversion chamber to effect formation of reaction products, injecting an additional fluid into the decomposition and conversion chamber through a porous wall of the decomposition and conversion chamber contemporaneously with the decomposing and converting of the fuel rich combustible gas stream mixture, wherein the additional fluid is injected at a force exceeding that of reaction products approaching an interior surface of the decomposition and conversion chamber thereby inhibiting deposition of the reaction products thereon, flowing the reaction products into a lower reaction chamber, flowing water along a portion of an interior surface of the lower reaction chamber, and flowing the reaction products through the portion of the lower reaction chamber, wherein the flowing water inhibits deposition of the reaction products on the interior surface of the lower reaction chamber.
- In some embodiments, injecting an additional fluid into the decomposition and conversion chamber through a porous wall of the decomposition and conversion chamber may include pulsing the additional fluid through the porous wall. The methods may further include introducing an air containing gas into the reaction products so as to form a fuel lean mixture. Flowing water along a portion of an interior surface of the lower reaction chamber may include employing a water vortex.
- The invention may further include an apparatus for use during the abatement of a semiconductor manufacturing process. The apparatus may include a thermal reaction chamber with an interior porous wall that defines a central decomposition and conversion chamber, at least one waste gas inlet in fluid communication with the central decomposition and conversion chamber and adapted to introduce a gaseous waste stream to the central decomposition and conversion chamber, a thermal mechanism positioned within the central decomposition and conversion chamber and adapted to combust the gaseous waste stream within the central decomposition and conversion chamber, thereby forming reaction products; and a fluid delivery system adapted to provide a fluid to the central decomposition and conversion chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central decomposition and conversion chamber.
- The apparatus may further include an outer wall that surrounds the interior porous wall and that defines an interior space between the outer wall and the interior porous wall. The fluid delivery system may be adapted to provide a fluid to the central decomposition and conversion chamber through the interior porous wall by providing fluid to the interior space between the outer wall and the interior porous wall. The central decomposition and conversion chamber may be cylindrical. The fluid delivery system may be adapted to provide water, air, clean dry air, depleted air and/or clean enriched air to the central decomposition and conversion chamber through the interior porous wall. The fluid delivery system may also be adapted to provide fluid to the central decomposition and conversion chamber through the interior porous wall by pulsing the fluid. The pulsing may be periodic. The fluid delivery system may be adapted to provide fluid to the central decomposition and conversion chamber through the interior porous wall at a pressure of less than about 600 psig and, in some embodiments, at a pressure less than about 100 psig. In some embodiments, the fluid delivery system may be adapted to provide a fluid at a pressure of about 50 psig to about 100 psig, about 5 psig to about 50 psig, or about 1/10 psig to about 5 psig. Other pressure ranges may be used.
- The fluid delivery system may be adapted to provide a fluid to the central decomposition and conversion chamber through the interior porous wall so as to form a non-deposition zone adjacent the interior surface of the central decomposition and conversion chamber. The fluid delivery system may also include a plurality of inlets adapted to deliver fluid along a length of an exterior surface of the interior porous wall.
- The interior porous wall may include pores shaped so as to provide passage of fluid into the central decomposition and conversion chamber while reducing backflow of any fluid or reaction products from the central decomposition and conversion chamber. In some embodiments, the interior porous wall may include a porous ceramic. The wall may include pores shaped so as to provide passage of fluid into the central decomposition and conversion chamber while reducing backflow of any fluid or reaction products from the central decomposition and conversion chamber.
- The thermal reaction chamber may include a plurality of waste gas inlets. For example, the thermal reaction chamber may include at least four or six waste gas inlets. The inlets may be angled and/or directed so as to introduce turbulent flow to prevent deposition on the sidewalls of the chamber.
- The apparatus may further include a second reaction chamber coupled to the thermal reaction chamber. The second reaction chamber may include a gas flow chamber in fluid communication with the central decomposition and conversion chamber. The gas flow chamber may have an inlet and outlet for passing the gaseous waste stream and reaction products through the gas flow chamber. In some embodiments, the second reaction chamber may also include a water delivery system adapted to generate a flowing liquid film on an interior surface of the gas flow chamber so as to reduce deposition and accumulation of particulate solids on the interior surface of the gas flow chamber.
- The water delivery system may be adapted to cool the interior surface of the gas flow chamber. In some embodiments, the water delivery system may be adapted to generate a vortex of cooling water. In some embodiments, the second reaction chamber may be located below the thermal reaction chamber. The second reaction chamber may also include at least one inlet adapted to introduce an oxidant to the gaseous waste stream.
- The invention may be embodied as an apparatus for use during the abatement of a semiconductor manufacturing process. The apparatus may include an upper reaction chamber and a lower reaction chamber. The upper reaction chamber may include an interior porous wall that defines a central decomposition and conversion chamber, an outer wall that surrounds the interior porous wall and that defines an interior space between the outer wall and the interior porous wall, at least one waste gas inlet in fluid communication with the central decomposition and conversion chamber and adapted to introduce a gaseous waste stream to the central decomposition and conversion chamber, a thermal mechanism positioned within the central decomposition and conversion chamber and adapted to combust the gaseous waste stream within the central decomposition and conversion chamber to thereby form reaction products, and a fluid delivery system adapted to provide a fluid to the central decomposition and conversion chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central decomposition and conversion chamber.
- The lower reaction chamber may be coupled to the upper reaction chamber. The lower reaction chamber may include a gas flow chamber in fluid communication with the central decomposition and conversion chamber, the gas flow chamber having an inlet and outlet for passing the gaseous waste stream and reaction products through the gas flow chamber. The lower reaction chamber may also include a water delivery system adapted to generate a flowing liquid film on an interior surface of the gas flow chamber so as to reduce deposition and accumulation of particulate solids on the interior surface of the gas flow chamber. The lower reaction chamber may also include an inlet adapted to introduce an oxidant to the gaseous waste stream.
- The invention may also include a replaceable liner for a thermal reaction chamber. The replaceable liner may be modular, porous, and constructed of ceramic or other similar materials. The porous ceramic liner may have a shape that defines a central decomposition and conversion chamber for use during decomposition and conversion of gaseous waste from a semiconductor manufacturing process. The porous ceramic liner or wall may have sufficient porosity to allow transfer of fluid from outside the porous ceramic wall, through the porous ceramic wall, and into the central decomposition and conversion chamber during a decomposition and conversion process performed within the central decomposition and conversion chamber so as to reduce movement of reaction products toward an interior surface of the porous ceramic wall or liner.
- In some embodiments, the porous ceramic wall/liner may include pores shaped so as to provide passage of fluid into the central decomposition and conversion chamber defined by the porous ceramic wall while reducing backflow of any fluid or reaction products from the central decomposition and conversion chamber. The porous ceramic wall may include ceramic, sintered ceramic, MgAl2O4, Al2O3, SiC, MgO, and/or any combination thereof.
- The invention may alternatively include a porous material wall having a shape that defines a central decomposition and conversion chamber for use during decomposition and conversion of gaseous waste from a semiconductor manufacturing process. The porous material wall may have sufficient porosity to allow transfer of fluid from outside the porous material wall through the porous material wall and into the central decomposition and conversion chamber during a decomposition and conversion process performed within the central decomposition and conversion chamber so as to reduce movement of reaction products toward an interior surface of the porous material wall. The porous material wall may comprise a sintered ceramic, sintered metal, porous metal material, a porous polymeric material, and/or a combination thereof.
- Although the invention has been variously described herein with reference to illustrative embodiments and features, it will be appreciated that the embodiments and features described hereinabove are not intended to limit the invention, and that other variations, modifications and other embodiments will readily suggest themselves to those of ordinary skill in the art, based on the disclosure herein. The invention therefore is to be broadly construed, consistent with the claims hereafter set forth.
Claims (28)
1. A system for manufacturing electronic devices, the system comprising:
a plurality of processing tools;
an abatement system for abating pollutants from the processing tools, the abatement system having a plurality of inlet ports; and
a manifold for coupling pollutant outlet ports of the plurality of processing tools to the plurality of inlet ports of the abatement system.
2. The system of claim 1 wherein the abatement system includes at least one of a thermal reaction chamber and a quenching unit.
3. The system of claim 1 wherein the plurality of inlet ports of the abatement system include at least one first inlet port and at least one second inlet port.
4. The system of claim 3 wherein the first inlet port is coupled to a first processing tool via the manifold and the second inlet port is coupled to a second processing tool via the manifold.
5. A system for manufacturing electronic devices, the system comprising:
a processing tool;
an abatement system for abating pollutants from the processing tool, the abatement system including a plurality of chambers, each chamber including a plurality of inlet ports; and
a manifold for coupling a pollutant outlet port of the processing tool to the plurality of inlet ports of the abatement system.
6. The system of claim 5 wherein the chambers of the abatement system include at least one of a thermal reaction chamber and a quenching unit.
7. The system of claim 5 wherein the plurality of inlet ports of each of the chambers include at least one primary inlet port and at least one back-up inlet port.
8. The system of claim 7 wherein the back-up inlet port is coupled to the manifold and available for use to receive pollutants redirected from an unavailable chamber.
9. A system for manufacturing electronic devices, the system comprising:
a plurality of processing tools;
an abatement system for abating pollutants from the processing tools, the abatement system including a plurality of chambers, each chamber including a plurality of inlet ports; and
a manifold for selectively coupling pollutant outlet ports of the plurality of processing tools to the plurality of inlet ports of the chambers of the abatement system.
10. The system of claim 9 wherein the chambers of the abatement system include at least one of a thermal reaction chamber and a quenching unit.
11. The system of claim 9 wherein the manifold is adapted to distribute the pollutants from the plurality of processing tools among the chambers of the abatement system.
12. The system of claim 11 wherein the manifold is further adapted to apportion the pollutants among the chambers of the abatement system.
13. The system of claim 11 wherein the manifold is further adapted to direct pollutants to chambers of the abatement system based upon availability of the individual chambers.
14. The system of claim 11 wherein the manifold is further adapted to receive status information regarding the individual chambers, and to direct pollutants to chambers of the abatement system based on the status information.
15. The system of claim 14 wherein the chambers individually have an abatement capacity, the chambers collectively have a total abatement capacity, the processing tools individually generate a pollutant output load, the processing tools collectively generate a total pollutant output load, and wherein the total abatement capacity exceeds the total pollutant output load.
16. The system of claim 15 wherein a combined abatement capacity of a subset of the chambers exceeds the total pollutant output load such that if a chamber were to become unavailable the manifold may redirect the pollutants from the processing tools to a subset of the chambers excluding the unavailable chamber without the total pollutant output load exceeding the combined abatement capacity of the subset of the chambers.
17. The system of claim 9 wherein the plurality of inlet ports of each of the chambers include at least one primary inlet port and at least one back-up inlet port.
18. The system of claim 17 wherein the back-up inlet port is coupled to the manifold and available for use to receive pollutants redirected from an unavailable chamber.
19. The system of claim 9 wherein each of the plurality of processing tools is associated with at least one of the chambers, and
wherein at least one of the plurality of chambers is designated as a back-up chamber not associated with anyone of the processing tools, and
wherein the back-up chamber includes a plurality of inlet ports coupled to each of the processing tools via the manifold which is adapted to direct pollutants to the back-up chamber only if one of the chambers associated with a processing tool becomes unavailable.
20. The system of claim 9 wherein the abatement system is adapted to decompose and convert gaseous pollutants in a gaseous waste stream.
21. The system of claim 20 wherein the chambers of the abatement system may include an upper thermal reaction chamber and a lower reaction chamber.
22. The system of claim 21 wherein the upper thermal reaction chamber may include:
an outer exterior wall,
an interior porous wall that defines a central decomposition and conversion chamber,
a fluid inlet for introducing one or more fluids into the central decomposition and conversion chamber,
thermal means for decomposing and converting the gaseous waste stream to form reaction products, and
a waste gas inlet for conducting the gaseous waste stream into the upper thermal reaction chamber.
23. The system of claim 22 wherein the interior porous wall defines an interior annular space.
24. The system of claim 22 wherein the lower reaction chamber may include:
a gas stream flow chamber in fluid communication with the central decomposition and conversion chamber, and
at least one oxidant inlet disposed to introduce an oxidant to the gas stream flow chamber.
25. The system of claim 24 wherein the waste gas inlet includes a conduit that terminates within the central decomposition and conversion chamber.
26. The system of claim 25 wherein a portion of the conduit that terminates within the central decomposition and conversion chamber is located within a tube which projects beyond an end of the conduit to define a chamber within the tube for flame formation.
27. The system of claim 26 wherein the tube includes an open end in fluid communication with the central decomposition and conversion chamber.
28. An apparatus for use during the abatement of a semiconductor manufacturing process comprising:
a plurality of chambers, each chamber including a plurality of waste stream inlet ports; and
a manifold for selectively coupling pollutant outlet ports of a plurality of processing tools to the plurality of waste stream inlet ports of the chambers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/555,032 US20070169889A1 (en) | 2005-10-31 | 2006-10-31 | Methods and apparatus for selectively coupling process tools to abatement reactors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73171905P | 2005-10-31 | 2005-10-31 | |
US11/555,032 US20070169889A1 (en) | 2005-10-31 | 2006-10-31 | Methods and apparatus for selectively coupling process tools to abatement reactors |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070169889A1 true US20070169889A1 (en) | 2007-07-26 |
Family
ID=38006466
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/555,056 Expired - Fee Related US7736600B2 (en) | 2005-10-31 | 2006-10-31 | Apparatus for manufacturing a process abatement reactor |
US11/555,032 Abandoned US20070169889A1 (en) | 2005-10-31 | 2006-10-31 | Methods and apparatus for selectively coupling process tools to abatement reactors |
US11/555,087 Abandoned US20070190469A1 (en) | 2005-10-31 | 2006-10-31 | Methods and apparatus for preventing deposition of reaction products in process abatement reactors |
US11/555,000 Expired - Fee Related US7700049B2 (en) | 2005-10-31 | 2006-10-31 | Methods and apparatus for sensing characteristics of the contents of a process abatement reactor |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/555,056 Expired - Fee Related US7736600B2 (en) | 2005-10-31 | 2006-10-31 | Apparatus for manufacturing a process abatement reactor |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/555,087 Abandoned US20070190469A1 (en) | 2005-10-31 | 2006-10-31 | Methods and apparatus for preventing deposition of reaction products in process abatement reactors |
US11/555,000 Expired - Fee Related US7700049B2 (en) | 2005-10-31 | 2006-10-31 | Methods and apparatus for sensing characteristics of the contents of a process abatement reactor |
Country Status (7)
Country | Link |
---|---|
US (4) | US7736600B2 (en) |
EP (1) | EP1954926A2 (en) |
JP (2) | JP5102217B2 (en) |
KR (1) | KR101036734B1 (en) |
CN (1) | CN101300411B (en) |
TW (1) | TWI336633B (en) |
WO (1) | WO2007053626A2 (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050135984A1 (en) * | 2003-12-19 | 2005-06-23 | Shawn Ferron | Apparatus and method for controlled combustion of gaseous pollutants |
US20080047586A1 (en) * | 2006-08-23 | 2008-02-28 | Loldj Youssef A | Systems and methods for operating and monitoring abatement systems |
US20090149996A1 (en) * | 2007-12-05 | 2009-06-11 | Applied Materials, Inc. | Multiple inlet abatement system |
US7700049B2 (en) | 2005-10-31 | 2010-04-20 | Applied Materials, Inc. | Methods and apparatus for sensing characteristics of the contents of a process abatement reactor |
US7736599B2 (en) | 2004-11-12 | 2010-06-15 | Applied Materials, Inc. | Reactor design to reduce particle deposition during process abatement |
US20100257710A1 (en) * | 2007-07-25 | 2010-10-14 | Stuendl Mathias | Apparatus for treating a multifilament thread |
US20170023447A1 (en) * | 2015-07-20 | 2017-01-26 | Cooper Environmental Services Llc | Sample fluid stream probe gas sheet nozzle |
US20170297066A1 (en) * | 2016-04-15 | 2017-10-19 | Applied Materials, Inc. | Plasma abatement solids avoidance by use of oxygen plasma cleaning cycle |
US9919939B2 (en) | 2011-12-06 | 2018-03-20 | Delta Faucet Company | Ozone distribution in a faucet |
US20180259182A1 (en) * | 2017-01-06 | 2018-09-13 | Alzeta Corporation | Systems and methods for improved waste gas abatement |
US10685818B2 (en) | 2017-02-09 | 2020-06-16 | Applied Materials, Inc. | Plasma abatement technology utilizing water vapor and oxygen reagent |
US20220010960A1 (en) * | 2018-11-22 | 2022-01-13 | Edwards Limited | Abatement |
US11458214B2 (en) | 2015-12-21 | 2022-10-04 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
Families Citing this family (304)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7771514B1 (en) * | 2004-02-03 | 2010-08-10 | Airgard, Inc. | Apparatus and method for providing heated effluent gases to a scrubber |
EP1994458A2 (en) | 2006-03-16 | 2008-11-26 | Applied Materials, Inc. | Methods and apparatus for improving operation of an electronic device manufacturing system |
US7611684B2 (en) * | 2006-08-09 | 2009-11-03 | Airgard, Inc. | Effluent gas scrubber and method of scrubbing effluent gasses |
JP5660888B2 (en) * | 2007-05-25 | 2015-01-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Method and apparatus for efficient operation of an abatement system |
WO2008156687A1 (en) * | 2007-06-15 | 2008-12-24 | Applied Materials, Inc. | Methods and systems for designing and validating operation of abatement systems |
CN101835521A (en) * | 2007-10-26 | 2010-09-15 | 应用材料公司 | Utilize the method and apparatus that is used for smart abatement that improves fuel circuit |
US7854792B2 (en) * | 2008-09-17 | 2010-12-21 | Airgard, Inc. | Reactive gas control |
US20100119984A1 (en) * | 2008-11-10 | 2010-05-13 | Fox Allen G | Abatement system |
US8986002B2 (en) * | 2009-02-26 | 2015-03-24 | 8 Rivers Capital, Llc | Apparatus for combusting a fuel at high pressure and high temperature, and associated system |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US20120028201A1 (en) * | 2010-07-30 | 2012-02-02 | General Electric Company | Subsurface heater |
DE102010041091B4 (en) * | 2010-09-21 | 2012-04-26 | Siemens Aktiengesellschaft | Fluid-direct cooling of the inner reaction space wall of an entrained flow gasifier with cold gas space |
DE102011007806B4 (en) * | 2011-04-20 | 2012-11-15 | Siemens Aktiengesellschaft | Reactor for the gasification of ash-free and ash-poor fuels with a cold gas space |
DE102011007808B3 (en) * | 2011-04-20 | 2012-09-20 | Siemens Aktiengesellschaft | Reactor for gasification of ash-less or low-ash-fuel e.g. cold gas steam, in air flow carburetor, has cold gas chambers applied with cold gases such that cold gases flow through plate and porous material toward gasification chamber |
SE536161C2 (en) * | 2011-06-17 | 2013-06-04 | Chemrec Ab | Reactor with resilient structure for gasification of gasification raw material |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
DE102011080533A1 (en) * | 2011-08-05 | 2013-02-07 | Bayer Technology Services Gmbh | Apparatus and method for the treatment of halogen-organosilicon compounds from exhaust gases |
GB2493750A (en) | 2011-08-17 | 2013-02-20 | Edwards Ltd | Apparatus for treating a gas stream |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
JP5466732B2 (en) * | 2012-06-21 | 2014-04-09 | 月島機械株式会社 | Method for producing reactive aggregated particles, method for producing positive electrode active material for lithium ion battery, method for producing lithium ion battery, and apparatus for producing reactive aggregated particles |
GB2504335A (en) * | 2012-07-26 | 2014-01-29 | Edwards Ltd | Radiant burner for the combustion of manufacturing effluent gases. |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
KR101278178B1 (en) * | 2012-10-15 | 2013-07-05 | 씨에스케이(주) | Burner for scrubber |
KR20150108392A (en) * | 2013-01-16 | 2015-09-25 | 어플라이드 머티어리얼스, 인코포레이티드 | Quartz upper and lower domes |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US20140262033A1 (en) * | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Gas sleeve for foreline plasma abatement system |
US9023303B2 (en) * | 2013-04-15 | 2015-05-05 | Airgard, Inc. | Extended or multiple reaction zones in scrubbing apparatus |
CN105121957B (en) * | 2013-04-25 | 2018-03-30 | 爱德华兹有限公司 | radiant burner |
GB2516267B (en) * | 2013-07-17 | 2016-08-17 | Edwards Ltd | Head assembly |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
JP6310765B2 (en) * | 2014-05-12 | 2018-04-11 | 日本パイオニクス株式会社 | Exhaust gas combustion purification system |
CN105090999B (en) * | 2014-05-12 | 2018-11-20 | 日本派欧尼株式会社 | The combustion-type purification device of exhaust gas |
JP6258797B2 (en) * | 2014-06-27 | 2018-01-10 | 日本パイオニクス株式会社 | Exhaust gas combustion purification system |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
GB2533293A (en) * | 2014-12-15 | 2016-06-22 | Edwards Ltd | Inlet assembly |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10465905B2 (en) * | 2015-03-26 | 2019-11-05 | Korea Institute Of Energy Research | Energy saving combustion device for burning refractory hazardous gas and method for operating the same |
GB201505447D0 (en) * | 2015-03-30 | 2015-05-13 | Edwards Ltd | Radiant burner |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR102700194B1 (en) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
JP7084939B2 (en) | 2017-03-07 | 2022-06-15 | 8 リバーズ キャピタル,エルエルシー | Systems and methods for operating flexible fuel combustors for gas turbines |
KR102677621B1 (en) | 2017-03-07 | 2024-06-21 | 8 리버스 캐피탈, 엘엘씨 | System and method for combustion of solid fuels and derivatives thereof |
GB2560916B (en) * | 2017-03-27 | 2020-01-01 | Edwards Ltd | Nozzle for an abatement device |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
GB2561190A (en) * | 2017-04-04 | 2018-10-10 | Edwards Ltd | Purge gas feeding means, abatement systems and methods of modifying abatement systems |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
MY195067A (en) * | 2017-07-07 | 2023-01-06 | Siw Eng Pte Ltd | Device And System For Decomposing And Oxidizing Gaseous Pollutant |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102401446B1 (en) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
JP7206265B2 (en) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | Equipment with a clean mini-environment |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
KR102695659B1 (en) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a gap filling layer by plasma assisted deposition |
TWI799494B (en) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
TWI811348B (en) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
TWI816783B (en) | 2018-05-11 | 2023-10-01 | 荷蘭商Asm 智慧財產控股公司 | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
TWI840362B (en) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
TW202405221A (en) | 2018-06-27 | 2024-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
TW202409324A (en) | 2018-06-27 | 2024-03-01 | 荷蘭商Asm Ip私人控股有限公司 | Cyclic deposition processes for forming metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR102686758B1 (en) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
JP7458370B2 (en) | 2018-07-23 | 2024-03-29 | 8 リバーズ キャピタル,エルエルシー | Systems and methods for generating electricity through flameless combustion - Patents.com |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102707956B1 (en) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (en) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming device structure, structure formed by the method and system for performing the method |
TW202405220A (en) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
TW202044325A (en) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus |
JP7509548B2 (en) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | Cyclic deposition method and apparatus for filling recesses formed in a substrate surface - Patents.com |
TWI842826B (en) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
KR20200108248A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
KR20200116033A (en) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
KR20200123380A (en) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188254A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP7499079B2 (en) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | Plasma device using coaxial waveguide and substrate processing method |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (en) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming topology-controlled amorphous carbon polymer film |
KR20210010817A (en) | 2019-07-19 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Method of Forming Topology-Controlled Amorphous Carbon Polymer Film |
CN112309843A (en) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | Selective deposition method for achieving high dopant doping |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (en) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | Liquid level sensor for a chemical source vessel |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
KR102099599B1 (en) * | 2019-09-26 | 2020-04-14 | (주)상원기계 | INDUSTRIAL HYBRID MODULE TYPE VOCs TREATING APPARATUS |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
KR20210042810A (en) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
TWI846953B (en) | 2019-10-08 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
KR20210043460A (en) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a photoresist underlayer and structure including same |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (en) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
KR20210050453A (en) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP7527928B2 (en) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210078405A (en) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
TW202140135A (en) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | Gas supply assembly and valve plate assembly |
KR20210089079A (en) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | Channeled lift pin |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (en) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
KR20210100010A (en) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for transmittance measurements of large articles |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (en) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | System dedicated for parts cleaning |
KR20210116249A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | lockout tagout assembly and system and method of using same |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
CN113394086A (en) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | Method for producing a layer structure having a target topological profile |
CN111412481B (en) * | 2020-03-19 | 2023-01-10 | 长江存储科技有限责任公司 | Exhaust gas treatment device |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
KR20210128343A (en) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming chromium nitride layer and structure including the chromium nitride layer |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
CN113555279A (en) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | Method of forming vanadium nitride-containing layers and structures including the same |
KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
TW202147543A (en) | 2020-05-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Semiconductor processing system |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
TW202146699A (en) | 2020-05-15 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming a silicon germanium layer, semiconductor structure, semiconductor device, method of forming a deposition layer, and deposition system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
TW202200837A (en) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Reaction system for forming thin film on substrate |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202212620A (en) | 2020-06-02 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus for processing substrate, method of forming film, and method of controlling apparatus for processing substrate |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
KR102707957B1 (en) | 2020-07-08 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | Method for processing a substrate |
TW202219628A (en) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
TW202212623A (en) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming metal silicon oxide layer and metal silicon oxynitride layer, semiconductor structure, and system |
TW202229601A (en) | 2020-08-27 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming patterned structures, method of manipulating mechanical property, device structure, and substrate processing system |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
KR20220045900A (en) | 2020-10-06 | 2022-04-13 | 에이에스엠 아이피 홀딩 비.브이. | Deposition method and an apparatus for depositing a silicon-containing material |
CN114293174A (en) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | Gas supply unit and substrate processing apparatus including the same |
GB2599898A (en) * | 2020-10-07 | 2022-04-20 | Edwards Ltd | Burner Liner |
TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
TW202217037A (en) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing vanadium metal, structure, device and a deposition assembly |
TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
TW202235649A (en) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for filling a gap and related systems and devices |
KR20220076343A (en) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | an injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
CN114639631A (en) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | Fixing device for measuring jumping and swinging |
TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
CN112915718B (en) * | 2021-01-25 | 2022-05-17 | 北京京仪自动化装备技术股份有限公司 | Semiconductor processing waste gas treatment equipment |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
EP4113008A1 (en) * | 2021-07-01 | 2023-01-04 | Siemens Energy Global GmbH & Co. KG | Hydrogen fired combustion chamber system, method and apparatus |
GB2608820A (en) * | 2021-07-13 | 2023-01-18 | Edwards Ltd | Inlet assembly |
GB2609436A (en) * | 2021-07-30 | 2023-02-08 | Edwards Ltd | Inlet head assembly |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
BE1030332B1 (en) * | 2022-03-11 | 2023-10-09 | D Crbn Bv | REACTOR AND USE OF A REACTOR FOR CONVERTING CHEMICAL COMPOUNDS INTO MATERIALS, GASES OR ENERGY |
GB2625846A (en) * | 2022-12-27 | 2024-07-03 | Csk Inc | Scrubber burner |
US12005389B1 (en) | 2023-10-02 | 2024-06-11 | Globalfoundries U.S. Inc. | Retrofittable dry media abatement reactor |
Citations (97)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2819151A (en) * | 1954-03-02 | 1958-01-07 | Flemmert Gosta Lennart | Process for burning silicon fluorides to form silica |
US3185846A (en) * | 1961-05-16 | 1965-05-25 | Bailey Meter Co | Ultra-violet radiation flame monitor |
US3813852A (en) * | 1972-03-22 | 1974-06-04 | Elkem Spigerverket As | Method of recovering fluorine from waste gases |
US3949057A (en) * | 1973-01-29 | 1976-04-06 | Croll-Reynolds Company, Inc. | Air pollution control of oxides of nitrogen |
US4011298A (en) * | 1973-12-18 | 1977-03-08 | Chiyoda Chemical Engineering & Construction Co. Ltd. | Method for simultaneous removal of SOx and NOx |
US4083607A (en) * | 1976-05-05 | 1978-04-11 | Mott Lambert H | Gas transport system for powders |
US4154141A (en) * | 1977-05-17 | 1979-05-15 | The United States Of America As Represented By The Secretary Of The Army | Ultrafast, linearly-deflagration ignition system |
US4206189A (en) * | 1977-01-04 | 1980-06-03 | Belov Viktor Y | Method of producing hydrogen fluoride and silicon dioxide from silicon tetra-fluoride |
US4243372A (en) * | 1979-02-05 | 1981-01-06 | Electronics Corporation Of America | Burner control system |
US4374649A (en) * | 1981-02-12 | 1983-02-22 | Burns & Roe, Inc. | Flame arrestor |
US4519999A (en) * | 1980-03-31 | 1985-05-28 | Union Carbide Corporation | Waste treatment in silicon production operations |
US4584001A (en) * | 1983-08-09 | 1986-04-22 | Vbm Corporation | Modular oxygen generator |
US4644877A (en) * | 1984-01-23 | 1987-02-24 | Pyroplasma International N.V. | Plasma pyrolysis waste destruction |
US4661056A (en) * | 1986-03-14 | 1987-04-28 | American Hoechst Corporation | Turbulent incineration of combustible materials supplied in low pressure laminar flow |
US4719088A (en) * | 1985-02-12 | 1988-01-12 | Mitsubish Denki Kabushiki Kaisha | Apparatus for removing at least one acidic component from a gas |
US4753915A (en) * | 1985-11-05 | 1988-06-28 | Hoechst Aktiengesellschaft | Process for making a carrier-supported catalyst |
US4801437A (en) * | 1985-12-04 | 1989-01-31 | Japan Oxygen Co., Ltd. | Process for treating combustible exhaust gases containing silane and the like |
US4834020A (en) * | 1987-12-04 | 1989-05-30 | Watkins-Johnson Company | Atmospheric pressure chemical vapor deposition apparatus |
US4908191A (en) * | 1987-07-21 | 1990-03-13 | Ethyl Corporation | Removing arsine from gaseous streams |
US4935212A (en) * | 1988-12-13 | 1990-06-19 | Man Technologie Gmbh | Method of decomposing organic halogen compounds in gaseous phase |
US4981722A (en) * | 1988-08-12 | 1991-01-01 | Veb Elektromat Dresden | Apparatus for the gas-phase processing of disk-shaped workpieces |
US4986838A (en) * | 1989-06-14 | 1991-01-22 | Airgard, Inc. | Inlet system for gas scrubber |
US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
US5000221A (en) * | 1989-09-11 | 1991-03-19 | Palmer David W | Flow control system |
US5009869A (en) * | 1987-12-28 | 1991-04-23 | Electrocinerator Technologies, Inc. | Methods for purification of air |
US5011520A (en) * | 1989-12-15 | 1991-04-30 | Vector Technical Group, Inc. | Hydrodynamic fume scrubber |
US5114683A (en) * | 1989-02-13 | 1992-05-19 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Thermal decomposition trap |
US5113789A (en) * | 1990-04-24 | 1992-05-19 | Watkins Johnson Company | Self cleaning flow control orifice |
US5118286A (en) * | 1991-01-17 | 1992-06-02 | Amtech Systems | Closed loop method and apparatus for preventing exhausted reactant gas from mixing with ambient air and enhancing repeatability of reaction gas results on wafers |
US5122391A (en) * | 1991-03-13 | 1992-06-16 | Watkins-Johnson Company | Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD |
US5123836A (en) * | 1988-07-29 | 1992-06-23 | Chiyoda Corporation | Method for the combustion treatment of toxic gas-containing waste gas |
US5176897A (en) * | 1989-05-01 | 1993-01-05 | Allied-Signal Inc. | Catalytic destruction of organohalogen compounds |
US5183646A (en) * | 1989-04-12 | 1993-02-02 | Custom Engineered Materials, Inc. | Incinerator for complete oxidation of impurities in a gas stream |
US5199856A (en) * | 1989-03-01 | 1993-04-06 | Massachusetts Institute Of Technology | Passive structural and aerodynamic control of compressor surge |
US5206003A (en) * | 1989-07-07 | 1993-04-27 | Ngk Insulators, Ltd. | Method of decomposing flow |
US5207836A (en) * | 1989-08-25 | 1993-05-04 | Applied Materials, Inc. | Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus |
US5211729A (en) * | 1991-08-30 | 1993-05-18 | Sematech, Inc. | Baffle/settling chamber for a chemical vapor deposition equipment |
US5213767A (en) * | 1988-06-04 | 1993-05-25 | Boc Limited | Dry exhaust gas conditioning |
US5220940A (en) * | 1988-04-07 | 1993-06-22 | David Palmer | Flow control valve with venturi |
US5281302A (en) * | 1992-01-27 | 1994-01-25 | Siemens Aktiengesellschaft | Method for cleaning reaction chambers by plasma etching |
US5280664A (en) * | 1992-03-20 | 1994-01-25 | Lin Mary D | Disposable household cleaning devices |
US5304398A (en) * | 1993-06-03 | 1994-04-19 | Watkins Johnson Company | Chemical vapor deposition of silicon dioxide using hexamethyldisilazane |
US5320124A (en) * | 1988-04-07 | 1994-06-14 | Palmer David W | Regulator adaptable for maintaining a constant partial vacuum in a remote region |
US5393394A (en) * | 1992-08-18 | 1995-02-28 | Kabushiki Kaisha Toshiba | Method and apparatus for decomposing organic halogen-containing compound |
US5407647A (en) * | 1994-05-27 | 1995-04-18 | Florida Scientific Laboratories Inc. | Gas-scrubber apparatus for the chemical conversion of toxic gaseous compounds into non-hazardous inert solids |
US5417934A (en) * | 1988-06-04 | 1995-05-23 | Boc Limited | Dry exhaust gas conditioning |
US5425886A (en) * | 1993-06-23 | 1995-06-20 | The United States Of America As Represented By The Secretary Of The Navy | On demand, non-halon, fire extinguishing systems |
US5494004A (en) * | 1994-09-23 | 1996-02-27 | Lockheed Corporation | On line pulsed detonation/deflagration soot blower |
US5495893A (en) * | 1994-05-10 | 1996-03-05 | Ada Technologies, Inc. | Apparatus and method to control deflagration of gases |
US5510093A (en) * | 1994-07-25 | 1996-04-23 | Alzeta Corporation | Combustive destruction of halogenated compounds |
US5510066A (en) * | 1992-08-14 | 1996-04-23 | Guild Associates, Inc. | Method for free-formation of a free-standing, three-dimensional body |
US5527631A (en) * | 1994-02-18 | 1996-06-18 | Westinghouse Electric Corporation | Hydrocarbon reforming catalyst material and configuration of the same |
US5597540A (en) * | 1991-12-11 | 1997-01-28 | Japan Pionics Co., Ltd. | Process for cleaning harmful gas |
US5599508A (en) * | 1993-06-01 | 1997-02-04 | The Babcock & Wilcox Company | Flue gas conditioning for the removal of acid gases, air toxics and trace metals |
US5601790A (en) * | 1993-07-16 | 1997-02-11 | Thermatrix, Inc. | Method and afterburner apparatus for control of highly variable flows |
USH1701H (en) * | 1996-03-15 | 1998-01-06 | Motorola, Inc. | Method and apparatus for using molten aluminum to abate PFC gases from a semiconductor facility |
US5716428A (en) * | 1995-11-29 | 1998-02-10 | Kanken Techno Co., Ltd. | Method for removing harmful substances of exhaust gas discharged from semiconductor manufacturing process |
US5720444A (en) * | 1996-01-24 | 1998-02-24 | Guild International Inc. | Strip accumulators |
US5720931A (en) * | 1995-07-21 | 1998-02-24 | Guild Associates, Inc. | Catalytic oxidation of organic nitrogen-containing compounds |
US5749720A (en) * | 1995-04-21 | 1998-05-12 | Nkk Corporation | Gas heating apparatus with dual burners |
US5756052A (en) * | 1995-12-26 | 1998-05-26 | Mitsubishi Jukogyo Kabushiki Kaisha | Flue gas treatment system |
US5759498A (en) * | 1996-12-12 | 1998-06-02 | United Microelectronics Corp. | Gas exhaust apparatus |
US5759237A (en) * | 1996-06-14 | 1998-06-02 | L'air Liquide Societe Anonyme Pour L'etude Et, L'exploitation Des Procedes Georges Claude | Process and system for selective abatement of reactive gases and recovery of perfluorocompound gases |
US5762893A (en) * | 1995-09-01 | 1998-06-09 | Cs-Gmbh Halbleiter-Und Solartechnologie | Method for cleaning gases containing ozone-depleting and/or climate-active halogenated compounds |
US5855822A (en) * | 1997-08-22 | 1999-01-05 | Chen; Tsong-Maw | Water discharge module for semi-conductor exhaust treatment apparatus |
US5855648A (en) * | 1997-06-05 | 1999-01-05 | Praxair Technology, Inc. | Solid electrolyte system for use with furnaces |
US5858065A (en) * | 1995-07-17 | 1999-01-12 | American Air Liquide | Process and system for separation and recovery of perfluorocompound gases |
US5865879A (en) * | 1995-12-22 | 1999-02-02 | Samsung Electronics Co., Ltd. | Gas scrubber used in fabricating semiconductor devices and gas filtering method using the same |
US5877391A (en) * | 1996-03-05 | 1999-03-02 | Hitachi, Ltd. | Method for treating gas containing organohalogen compounds, and catalyst for decomposing the organohalogen compounds |
US5891404A (en) * | 1995-10-16 | 1999-04-06 | Teisan Kabushiki Kaisha | Exhaust gas treatment unit |
US5900217A (en) * | 1995-01-23 | 1999-05-04 | Centrotherm Elektrische Anlagen Gmbh & Co. | Apparatus for purifying waste gases |
US6010576A (en) * | 1998-08-27 | 2000-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for cleaning an exhaust gas reactor |
US6009827A (en) * | 1995-12-06 | 2000-01-04 | Applied Materials, Inc. | Apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films |
US6013584A (en) * | 1997-02-19 | 2000-01-11 | Applied Materials, Inc. | Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications |
US6030591A (en) * | 1994-04-06 | 2000-02-29 | Atmi Ecosys Corporation | Process for removing and recovering halocarbons from effluent process streams |
US6059858A (en) * | 1997-10-30 | 2000-05-09 | The Boc Group, Inc. | High temperature adsorption process |
US6185839B1 (en) * | 1998-05-28 | 2001-02-13 | Applied Materials, Inc. | Semiconductor process chamber having improved gas distributor |
US6187080B1 (en) * | 1999-08-09 | 2001-02-13 | United Microelectronics Inc. | Exhaust gas treatment apparatus including a water vortex means and a discharge pipe |
US6187072B1 (en) * | 1995-09-25 | 2001-02-13 | Applied Materials, Inc. | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions |
US6190507B1 (en) * | 1998-07-24 | 2001-02-20 | The United States Of America As Represented By The Department Of Energy | Method for generating a highly reactive plasma for exhaust gas aftertreatment and enhanced catalyst reactivity |
US6217640B1 (en) * | 1999-08-09 | 2001-04-17 | United Microelectronics Corp. | Exhaust gas treatment apparatus |
US6234787B1 (en) * | 1996-08-14 | 2001-05-22 | Nippon Sanso Corporation | Combustion type harmful substance removing apparatus |
US20010001652A1 (en) * | 1997-01-14 | 2001-05-24 | Shuichi Kanno | Process for treating flourine compound-containing gas |
US6338312B2 (en) * | 1998-04-15 | 2002-01-15 | Advanced Technology Materials, Inc. | Integrated ion implant scrubber system |
US6345768B1 (en) * | 1999-06-03 | 2002-02-12 | Paloma Industries, Limited | Control valve for vessel gas water heater |
US6361584B1 (en) * | 1999-11-02 | 2002-03-26 | Advanced Technology Materials, Inc. | High temperature pressure swing adsorption system for separation of oxygen-containing gas mixtures |
US6511641B2 (en) * | 1998-01-12 | 2003-01-28 | Advanced Technology Materials, Inc. | Method for abatement of gaseous pollutants |
US6527828B2 (en) * | 2001-03-19 | 2003-03-04 | Advanced Technology Materials, Inc. | Oxygen enhanced CDA modification to a CDO integrated scrubber |
US6544482B1 (en) * | 2000-03-14 | 2003-04-08 | Advanced Technology Materials, Inc. | Chamber cleaning mechanism |
US20040065013A1 (en) * | 2002-10-03 | 2004-04-08 | Devries Peter David | Reforming and hydrogen purification system |
US6843830B2 (en) * | 2003-04-15 | 2005-01-18 | Advanced Technology Materials, Inc. | Abatement system targeting a by-pass effluent stream of a semiconductor process tool |
US6875007B2 (en) * | 2002-08-07 | 2005-04-05 | General Motors Corporation | Multiple port catalytic combustion device and method of operating same |
US20060024226A1 (en) * | 2002-09-16 | 2006-02-02 | Yong-Ki Park | Catalyst and method for decomposition of perfluoro-compound in waste gas |
US20060104879A1 (en) * | 2004-11-12 | 2006-05-18 | Applied Materials, Inc. | Reactor design to reduce particle deposition during process abatement |
US7047893B2 (en) * | 2002-06-03 | 2006-05-23 | Loving Ronald E | Pollution abatement incinerator system |
US7160521B2 (en) * | 2001-07-11 | 2007-01-09 | Applied Materials, Inc. | Treatment of effluent from a substrate processing chamber |
US7316721B1 (en) * | 2004-02-09 | 2008-01-08 | Porvair, Plc | Ceramic foam insulator with thermal expansion joint |
Family Cites Families (136)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE609721A (en) | 1960-11-03 | 1962-02-15 | Goesta Lennart Flemmert | Method of recovering finely divided silicon dioxide obtained by reacting compounds of silicon and fluorine in the gas phase with water |
US3181846A (en) * | 1963-04-05 | 1965-05-04 | United States Steel Corp | Method and apparatus for open coil annealing |
DE1221755B (en) | 1963-12-19 | 1966-07-28 | Appbau Eugen Schrag Kommanditg | Control and safety device for gas or oil firing |
BE756604A (en) | 1969-09-26 | 1971-03-01 | Electronics Corp America | ANALYZER DEVICE, ESPECIALLY FOR THE REGULATION OF COMBUSTION |
US3983021A (en) | 1971-06-09 | 1976-09-28 | Monsanto Company | Nitrogen oxide decomposition process |
US3698696A (en) | 1971-06-14 | 1972-10-17 | Standard Int Corp | Combustion mixture control system for calenders |
US3969485A (en) | 1971-10-28 | 1976-07-13 | Flemmert Goesta Lennart | Process for converting silicon-and-fluorine-containing waste gases into silicon dioxide and hydrogen fluoride |
US3845191A (en) | 1972-06-02 | 1974-10-29 | Du Pont | Method of removing halocarbons from gases |
US3898040A (en) | 1972-06-29 | 1975-08-05 | Universal Oil Prod Co | Recuperative form of thermal-catalytic incinerator |
US3969482A (en) | 1974-04-25 | 1976-07-13 | Teller Environmental Systems, Inc. | Abatement of high concentrations of acid gas emissions |
US4059386A (en) | 1976-01-21 | 1977-11-22 | A. O. Smith Corporation | Combustion heating apparatus to improve operation of gas pilot burners |
NL7704399A (en) | 1977-04-22 | 1978-10-24 | Shell Int Research | METHOD AND REACTOR FOR THE PARTIAL BURNING OF COAL POWDER. |
US4296079A (en) | 1978-02-10 | 1981-10-20 | Vinings Chemical Company | Method of manufacturing aluminum sulfate from flue gas |
US4236464A (en) | 1978-03-06 | 1980-12-02 | Aerojet-General Corporation | Incineration of noxious materials |
DE2932129A1 (en) | 1978-08-25 | 1980-02-28 | Satronic Ag | FLAME CONTROLLER ON OIL OR GAS BURNERS |
US4238460A (en) | 1979-02-02 | 1980-12-09 | United States Steel Corporation | Waste gas purification systems and methods |
CH649274A5 (en) | 1980-10-14 | 1985-05-15 | Maerz Ofenbau | CALCINING OVEN FOR BURNING LIMESTONE AND SIMILAR MINERAL RAW MATERIALS. |
US4479443A (en) | 1982-03-08 | 1984-10-30 | Inge Faldt | Method and apparatus for thermal decomposition of stable compounds |
US4479809A (en) | 1982-12-13 | 1984-10-30 | Texaco Inc. | Apparatus for gasifying coal including a slag trap |
US4483672A (en) | 1983-01-19 | 1984-11-20 | Essex Group, Inc. | Gas burner control system |
US4541995A (en) | 1983-10-17 | 1985-09-17 | W. R. Grace & Co. | Process for utilizing doubly promoted catalyst with high geometric surface area |
US4788036A (en) | 1983-12-29 | 1988-11-29 | Inco Alloys International, Inc. | Corrosion resistant high-strength nickel-base alloy |
US4555389A (en) | 1984-04-27 | 1985-11-26 | Toyo Sanso Co., Ltd. | Method of and apparatus for burning exhaust gases containing gaseous silane |
US5137701A (en) | 1984-09-17 | 1992-08-11 | Mundt Randall S | Apparatus and method for eliminating unwanted materials from a gas flow line |
US4941957A (en) | 1986-10-22 | 1990-07-17 | Ultrox International | Decomposition of volatile ogranic halogenated compounds contained in gases and aqueous solutions |
ATE118688T1 (en) | 1986-11-27 | 1995-03-15 | Suppan Friedrich | METHOD AND SYSTEM FOR GENERATING ENERGY FROM TOXIC WASTE MATERIALS WITH THE SIMULTANEOUS DISPOSAL OF THEM. |
US5364604A (en) | 1987-03-02 | 1994-11-15 | Turbotak Technologies Inc. | Solute gas-absorbing procedure |
FR2616884B1 (en) | 1987-06-19 | 1991-05-10 | Air Liquide | PROCESS FOR THE TREATMENT OF GASEOUS EFFLUENTS FROM THE MANUFACTURE OF ELECTRONIC COMPONENTS AND AN INCINERATION APPARATUS FOR IMPLEMENTING SAME |
US5255709A (en) | 1988-04-07 | 1993-10-26 | David Palmer | Flow regulator adaptable for use with process-chamber air filter |
US5456280A (en) | 1988-04-07 | 1995-10-10 | Palmer; David W. | Process-chamber flow control system |
US5255710A (en) | 1988-04-07 | 1993-10-26 | David Palmer | Process-chamber flow control system |
US5450873A (en) | 1988-04-07 | 1995-09-19 | Palmer; David W. | System for controlling flow through a process region |
US5251654A (en) | 1988-04-07 | 1993-10-12 | David Palmer | Flow regulator adaptable for use with exhaust from a process chamber |
US4954320A (en) | 1988-04-22 | 1990-09-04 | The United States Of America As Represented By The Secretary Of The Army | Reactive bed plasma air purification |
US4975098A (en) | 1988-05-31 | 1990-12-04 | Lee John H S | Low pressure drop detonation arrestor for pipelines |
US4966611A (en) | 1989-03-22 | 1990-10-30 | Custom Engineered Materials Inc. | Removal and destruction of volatile organic compounds from gas streams |
JPH0649086B2 (en) | 1989-08-05 | 1994-06-29 | 三井・デュポンフロロケミカル株式会社 | Catalytic decomposition of chlorofluoroalkanes |
US5160707A (en) | 1989-08-25 | 1992-11-03 | Washington Suburban Sanitary Commission | Methods of and apparatus for removing odors from process airstreams |
US5045288A (en) | 1989-09-15 | 1991-09-03 | Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University | Gas-solid photocatalytic oxidation of environmental pollutants |
US5077525A (en) | 1990-01-24 | 1991-12-31 | Rosemount Inc. | Electrodeless conductivity sensor with inflatable surface |
US5045511A (en) | 1990-02-26 | 1991-09-03 | Alusuisse-Lonza Services, Ltd. | Ceramic bodies formed from yttria stabilized zirconia-alumina |
US5136975A (en) | 1990-06-21 | 1992-08-11 | Watkins-Johnson Company | Injector and method for delivering gaseous chemicals to a surface |
US5453494A (en) | 1990-07-06 | 1995-09-26 | Advanced Technology Materials, Inc. | Metal complex source reagents for MOCVD |
US5840897A (en) | 1990-07-06 | 1998-11-24 | Advanced Technology Materials, Inc. | Metal complex source reagents for chemical vapor deposition |
US6110529A (en) | 1990-07-06 | 2000-08-29 | Advanced Tech Materials | Method of forming metal films on a substrate by chemical vapor deposition |
JPH0663357A (en) | 1990-10-26 | 1994-03-08 | Tosoh Corp | Device for treating waste gas containing organic halogen compounds |
GB2251551B (en) | 1991-01-10 | 1994-08-31 | Graviner Ltd Kidde | Detonation suppression and fire extinguishing |
DE4102969C1 (en) | 1991-02-01 | 1992-10-08 | Cs Halbleiter- Und Solartechnologie Gmbh, 8000 Muenchen, De | |
US5147421A (en) | 1991-07-12 | 1992-09-15 | Calvert Environmental, Inc. | Wet scrubber particle discharge system and method of using the same |
US5371828A (en) | 1991-08-28 | 1994-12-06 | Mks Instruments, Inc. | System for delivering and vaporizing liquid at a continuous and constant volumetric rate and pressure |
US5271908A (en) | 1992-04-07 | 1993-12-21 | Intel Corporation | Pyrophoric gas neutralization chamber |
US5252007A (en) | 1992-05-04 | 1993-10-12 | University Of Pittsburgh Of The Commonwealth System Of Higher Education | Apparatus for facilitating solids transport in a pneumatic conveying line and associated method |
US5417948A (en) | 1992-11-09 | 1995-05-23 | Japan Pionics Co., Ltd. | Process for cleaning harmful gas |
WO1994014008A1 (en) | 1992-12-17 | 1994-06-23 | Thermatrix Inc. | Method and apparatus for control of fugitive voc emissions |
JP3421954B2 (en) | 1992-12-18 | 2003-06-30 | 株式会社ダイオー | Treatment method for ozone depleting substances |
DE4311061A1 (en) | 1993-04-03 | 1994-10-06 | Solvay Fluor & Derivate | Decomposition of NF3 in exhaust gases |
DE4319118A1 (en) | 1993-06-09 | 1994-12-15 | Breitbarth Friedrich Wilhelm D | Process and apparatus for disposing of fluorocarbons and other fluorine-containing compounds |
DE4320044A1 (en) | 1993-06-17 | 1994-12-22 | Das Duennschicht Anlagen Sys | Process and device for cleaning exhaust gases |
DE4321762A1 (en) | 1993-06-30 | 1995-01-12 | Bayer Ag | Process for cleaving C1 compounds containing fluorine and another halogen in the gas phase |
DE69421577T2 (en) | 1993-08-16 | 2000-07-13 | Ebara Corp., Tokio/Tokyo | Device for treating waste in a polishing device |
AT404431B (en) | 1993-09-09 | 1998-11-25 | Chemie Linz Gmbh | METHOD FOR THE ENVIRONMENTAL DISPOSAL OF TRIAZINE WASTE |
US5451388A (en) | 1994-01-21 | 1995-09-19 | Engelhard Corporation | Catalytic method and device for controlling VOC. CO and halogenated organic emissions |
US5453125A (en) | 1994-02-17 | 1995-09-26 | Krogh; Ole D. | ECR plasma source for gas abatement |
US5622682A (en) | 1994-04-06 | 1997-04-22 | Atmi Ecosys Corporation | Method for concentration and recovery of halocarbons from effluent gas streams |
US5663476A (en) | 1994-04-29 | 1997-09-02 | Motorola, Inc. | Apparatus and method for decomposition of chemical compounds by increasing residence time of a chemical compound in a reaction chamber |
US5572866A (en) | 1994-04-29 | 1996-11-12 | Environmental Thermal Oxidizers, Inc. | Pollution abatement incinerator system |
US5575636A (en) | 1994-06-21 | 1996-11-19 | Praxair Technology, Inc. | Porous non-fouling nozzle |
AU706663B2 (en) | 1994-09-23 | 1999-06-17 | Standard Oil Company, The | Oxygen permeable mixed conductor membranes |
JP3566995B2 (en) | 1994-10-05 | 2004-09-15 | 日本パイオニクス株式会社 | Purification method of halogen gas |
JP3280173B2 (en) | 1994-11-29 | 2002-04-30 | 日本エア・リキード株式会社 | Exhaust gas treatment equipment |
US5650128A (en) | 1994-12-01 | 1997-07-22 | Thermatrix, Inc. | Method for destruction of volatile organic compound flows of varying concentration |
US5520536A (en) | 1995-05-05 | 1996-05-28 | Burner Systems International, Inc. | Premixed gas burner |
JP2872637B2 (en) | 1995-07-10 | 1999-03-17 | アプライド マテリアルズ インコーポレイテッド | Microwave plasma based applicator |
US5785741A (en) | 1995-07-17 | 1998-07-28 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges, Claude | Process and system for separation and recovery of perfluorocompound gases |
DE19526737C2 (en) | 1995-07-21 | 2003-04-03 | Werkstoffpruefung Mbh Ges | Absorber for the removal of gaseous fluorine-containing and / or chlorine-containing compounds from a gas mixture and its use |
US5609736A (en) | 1995-09-26 | 1997-03-11 | Research Triangle Institute | Methods and apparatus for controlling toxic compounds using catalysis-assisted non-thermal plasma |
US5817284A (en) | 1995-10-30 | 1998-10-06 | Central Glass Company, Limited | Method for decomposing halide-containing gas |
US5665317A (en) | 1995-12-29 | 1997-09-09 | General Electric Company | Flue gas scrubbing apparatus |
US6095084A (en) | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
US5914091A (en) | 1996-02-15 | 1999-06-22 | Atmi Ecosys Corp. | Point-of-use catalytic oxidation apparatus and method for treatment of voc-containing gas streams |
DE19607862C2 (en) | 1996-03-01 | 1998-10-29 | Volkswagen Ag | Processes and devices for exhaust gas purification |
US5989412A (en) | 1996-04-08 | 1999-11-23 | Catalysts & Chemicals Industries Co., Ltd. | Hydrodemetallizing catalyst for hydrocarbon oil and process of hydrodemetallizing hydrocarbon oil therewith |
GB9608061D0 (en) | 1996-04-16 | 1996-06-19 | Boc Group Plc | Removal of noxious substances from gas streams |
IE80909B1 (en) | 1996-06-14 | 1999-06-16 | Air Liquide | An improved process and system for separation and recovery of perfluorocompound gases |
WO1997049479A1 (en) | 1996-06-26 | 1997-12-31 | Cs-Gmbh Halbleiter- Und Solartechnologie | Method of removing, from a stream of gas, fluorinated compounds which contribute to destruction of the ozone layer and/or changes in climate, and use of the method |
FR2751565B1 (en) | 1996-07-26 | 1998-09-04 | Air Liquide | PROCESS AND PLANT FOR THE TREATMENT OF PERFLUOROUS AND HYDROFLUOROCARBON GASES FOR THEIR DESTRUCTION |
JPH10110926A (en) | 1996-08-14 | 1998-04-28 | Nippon Sanso Kk | Combustion type harm removal apparatus |
JPH1089637A (en) * | 1996-09-12 | 1998-04-10 | Ishikawa Tekkosho:Kk | Incinerator and manufacture thereof |
US5788778A (en) | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
US5790934A (en) | 1996-10-25 | 1998-08-04 | E. Heller & Company | Apparatus for photocatalytic fluid purification |
US6322756B1 (en) | 1996-12-31 | 2001-11-27 | Advanced Technology And Materials, Inc. | Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases |
US5955037A (en) | 1996-12-31 | 1999-09-21 | Atmi Ecosys Corporation | Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases |
US5935283A (en) | 1996-12-31 | 1999-08-10 | Atmi Ecosys Corporation | Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
JP3648539B2 (en) | 1996-12-31 | 2005-05-18 | アドバンスド.テクノロジー.マテリアルス.インコーポレイテッド | Exhaust flow treatment system for oxidation treatment of semiconductor manufacturing exhaust |
US5833888A (en) | 1996-12-31 | 1998-11-10 | Atmi Ecosys Corporation | Weeping weir gas/liquid interface structure |
US5779863A (en) | 1997-01-16 | 1998-07-14 | Air Liquide America Corporation | Perfluorocompound separation and purification method and system |
US6277347B1 (en) | 1997-02-24 | 2001-08-21 | Applied Materials, Inc. | Use of ozone in process effluent abatement |
US5843239A (en) | 1997-03-03 | 1998-12-01 | Applied Materials, Inc. | Two-step process for cleaning a substrate processing chamber |
US5935540A (en) | 1997-04-25 | 1999-08-10 | Japan Pionics Co., Ltd. | Cleaning process for harmful gas |
US20010009652A1 (en) | 1998-05-28 | 2001-07-26 | Jose I. Arno | Apparatus and method for point-of-use abatement of fluorocompounds |
US6759018B1 (en) | 1997-05-16 | 2004-07-06 | Advanced Technology Materials, Inc. | Method for point-of-use treatment of effluent gas streams |
JP3294151B2 (en) | 1997-05-20 | 2002-06-24 | 三菱重工業株式会社 | Combustor flame detector |
DE69841726D1 (en) | 1997-06-20 | 2010-07-29 | Hitachi Ltd | Process, catalyst and apparatus for decomposing fluorinated compounds |
DE29712026U1 (en) | 1997-07-09 | 1998-11-12 | EBARA Germany GmbH, 63452 Hanau | Burner for the combustion of exhaust gases with at least one condensable component |
US5972078A (en) | 1997-07-31 | 1999-10-26 | Fsi International, Inc. | Exhaust rinse manifold for use with a coating apparatus |
WO1999011572A1 (en) | 1997-09-01 | 1999-03-11 | Laxarco Holding Limited | Electrically assisted partial oxidation of light hydrocarbons by oxygen |
TW550112B (en) | 1997-11-14 | 2003-09-01 | Hitachi Ltd | Method for processing perfluorocarbon, and apparatus therefor |
JP4066107B2 (en) | 1997-11-21 | 2008-03-26 | 株式会社荏原製作所 | Combustor for exhaust gas treatment |
US6153150A (en) | 1998-01-12 | 2000-11-28 | Advanced Technology Materials, Inc. | Apparatus and method for controlled decomposition oxidation of gaseous pollutants |
JPH11218318A (en) | 1998-02-03 | 1999-08-10 | Air Liquide Japan Ltd | Exhaust gas treating facility |
US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
WO2000009258A1 (en) | 1998-08-17 | 2000-02-24 | Ebara Corporation | Method and apparatus for treating waste gas containing fluorochemical |
ES2204042T3 (en) | 1998-10-07 | 2004-04-16 | Haldor Topsoe A/S | CERAMIC LAMINARY MATERIAL. |
WO2000032990A1 (en) | 1998-12-01 | 2000-06-08 | Ebara Corporation | Exhaust gas treating device |
JP3460122B2 (en) * | 1999-07-14 | 2003-10-27 | 日本酸素株式会社 | Combustion type abatement system and burner for combustion abatement system |
US6468490B1 (en) | 2000-06-29 | 2002-10-22 | Applied Materials, Inc. | Abatement of fluorine gas from effluent |
ATE350137T1 (en) | 1999-10-15 | 2007-01-15 | Abb Lummus Global Inc | CONVERSION OF NITROGEN OXIDES USING A CATALYST IN THE SHAPE OF A MESH NETWORK |
US6423284B1 (en) | 1999-10-18 | 2002-07-23 | Advanced Technology Materials, Inc. | Fluorine abatement using steam injection in oxidation treatment of semiconductor manufacturing effluent gases |
WO2001033141A1 (en) | 1999-11-02 | 2001-05-10 | Ebara Corporation | Combustor for exhaust gas treatment |
US6491884B1 (en) | 1999-11-26 | 2002-12-10 | Advanced Technology Materials, Inc. | In-situ air oxidation treatment of MOCVD process effluent |
GB0005231D0 (en) | 2000-03-03 | 2000-04-26 | Boc Group Plc | Abatement of semiconductor processing gases |
US6905663B1 (en) | 2000-04-18 | 2005-06-14 | Jose I. Arno | Apparatus and process for the abatement of semiconductor manufacturing effluents containing fluorine gas |
US20040028590A1 (en) | 2000-08-22 | 2004-02-12 | Takeshi Tsuji | Method and device for combustion type exhaust gas treatment |
JP4211227B2 (en) | 2001-03-16 | 2009-01-21 | 株式会社日立製作所 | Perfluoride treatment method and treatment apparatus |
US6824748B2 (en) | 2001-06-01 | 2004-11-30 | Applied Materials, Inc. | Heated catalytic treatment of an effluent gas from a substrate fabrication process |
US6655137B1 (en) * | 2001-06-25 | 2003-12-02 | Amir A. Sardari | Advanced combined cycle co-generation abatement system |
CN1279320C (en) | 2001-06-26 | 2006-10-11 | 霓佳斯株式会社 | Method and device for cleaning air |
US6551381B2 (en) * | 2001-07-23 | 2003-04-22 | Advanced Technology Materials, Inc. | Method for carbon monoxide reduction during thermal/wet abatement of organic compounds |
KR100962695B1 (en) | 2001-12-04 | 2010-06-11 | 가부시키가이샤 에바라 세이사꾸쇼 | Method and apparatus for treating exhaust gas |
US6805728B2 (en) | 2002-12-09 | 2004-10-19 | Advanced Technology Materials, Inc. | Method and apparatus for the abatement of toxic gas components from a semiconductor manufacturing process effluent stream |
GB2396402B (en) | 2002-12-21 | 2006-01-11 | Aeromatix Ltd | Gas burner |
US6813943B2 (en) | 2003-03-19 | 2004-11-09 | Mks Instruments, Inc. | Method and apparatus for conditioning a gas flow to improve a rate of pressure change measurement |
US20040216610A1 (en) | 2003-05-01 | 2004-11-04 | Glenn Tom | Gas processing system comprising a water curtain for preventing solids deposition of interior walls thereof |
JP2005098680A (en) * | 2003-08-20 | 2005-04-14 | Japan Pionics Co Ltd | Harmful gas cleaning facility |
US7569193B2 (en) | 2003-12-19 | 2009-08-04 | Applied Materials, Inc. | Apparatus and method for controlled combustion of gaseous pollutants |
JP5102217B2 (en) | 2005-10-31 | 2012-12-19 | アプライド マテリアルズ インコーポレイテッド | Process reduction reactor |
-
2006
- 2006-10-30 JP JP2008538972A patent/JP5102217B2/en not_active Expired - Fee Related
- 2006-10-30 EP EP06836717A patent/EP1954926A2/en not_active Withdrawn
- 2006-10-30 CN CN2006800407331A patent/CN101300411B/en not_active Expired - Fee Related
- 2006-10-30 KR KR1020087013127A patent/KR101036734B1/en not_active IP Right Cessation
- 2006-10-30 WO PCT/US2006/042501 patent/WO2007053626A2/en active Application Filing
- 2006-10-31 US US11/555,056 patent/US7736600B2/en not_active Expired - Fee Related
- 2006-10-31 US US11/555,032 patent/US20070169889A1/en not_active Abandoned
- 2006-10-31 US US11/555,087 patent/US20070190469A1/en not_active Abandoned
- 2006-10-31 US US11/555,000 patent/US7700049B2/en not_active Expired - Fee Related
- 2006-10-31 TW TW095140302A patent/TWI336633B/en not_active IP Right Cessation
-
2011
- 2011-04-01 JP JP2011081443A patent/JP2011174695A/en active Pending
Patent Citations (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2819151A (en) * | 1954-03-02 | 1958-01-07 | Flemmert Gosta Lennart | Process for burning silicon fluorides to form silica |
US3185846A (en) * | 1961-05-16 | 1965-05-25 | Bailey Meter Co | Ultra-violet radiation flame monitor |
US3813852A (en) * | 1972-03-22 | 1974-06-04 | Elkem Spigerverket As | Method of recovering fluorine from waste gases |
US3949057A (en) * | 1973-01-29 | 1976-04-06 | Croll-Reynolds Company, Inc. | Air pollution control of oxides of nitrogen |
US4011298A (en) * | 1973-12-18 | 1977-03-08 | Chiyoda Chemical Engineering & Construction Co. Ltd. | Method for simultaneous removal of SOx and NOx |
US4083607A (en) * | 1976-05-05 | 1978-04-11 | Mott Lambert H | Gas transport system for powders |
US4206189A (en) * | 1977-01-04 | 1980-06-03 | Belov Viktor Y | Method of producing hydrogen fluoride and silicon dioxide from silicon tetra-fluoride |
US4154141A (en) * | 1977-05-17 | 1979-05-15 | The United States Of America As Represented By The Secretary Of The Army | Ultrafast, linearly-deflagration ignition system |
US4243372A (en) * | 1979-02-05 | 1981-01-06 | Electronics Corporation Of America | Burner control system |
US4519999A (en) * | 1980-03-31 | 1985-05-28 | Union Carbide Corporation | Waste treatment in silicon production operations |
US4374649A (en) * | 1981-02-12 | 1983-02-22 | Burns & Roe, Inc. | Flame arrestor |
US4584001A (en) * | 1983-08-09 | 1986-04-22 | Vbm Corporation | Modular oxygen generator |
US4644877A (en) * | 1984-01-23 | 1987-02-24 | Pyroplasma International N.V. | Plasma pyrolysis waste destruction |
US4719088A (en) * | 1985-02-12 | 1988-01-12 | Mitsubish Denki Kabushiki Kaisha | Apparatus for removing at least one acidic component from a gas |
US4753915A (en) * | 1985-11-05 | 1988-06-28 | Hoechst Aktiengesellschaft | Process for making a carrier-supported catalyst |
US4801437A (en) * | 1985-12-04 | 1989-01-31 | Japan Oxygen Co., Ltd. | Process for treating combustible exhaust gases containing silane and the like |
US4661056A (en) * | 1986-03-14 | 1987-04-28 | American Hoechst Corporation | Turbulent incineration of combustible materials supplied in low pressure laminar flow |
US4908191A (en) * | 1987-07-21 | 1990-03-13 | Ethyl Corporation | Removing arsine from gaseous streams |
US4834020A (en) * | 1987-12-04 | 1989-05-30 | Watkins-Johnson Company | Atmospheric pressure chemical vapor deposition apparatus |
US5009869A (en) * | 1987-12-28 | 1991-04-23 | Electrocinerator Technologies, Inc. | Methods for purification of air |
US5220940A (en) * | 1988-04-07 | 1993-06-22 | David Palmer | Flow control valve with venturi |
US5320124A (en) * | 1988-04-07 | 1994-06-14 | Palmer David W | Regulator adaptable for maintaining a constant partial vacuum in a remote region |
US5417934A (en) * | 1988-06-04 | 1995-05-23 | Boc Limited | Dry exhaust gas conditioning |
US5213767A (en) * | 1988-06-04 | 1993-05-25 | Boc Limited | Dry exhaust gas conditioning |
US5123836A (en) * | 1988-07-29 | 1992-06-23 | Chiyoda Corporation | Method for the combustion treatment of toxic gas-containing waste gas |
US4981722A (en) * | 1988-08-12 | 1991-01-01 | Veb Elektromat Dresden | Apparatus for the gas-phase processing of disk-shaped workpieces |
US4935212A (en) * | 1988-12-13 | 1990-06-19 | Man Technologie Gmbh | Method of decomposing organic halogen compounds in gaseous phase |
US5114683A (en) * | 1989-02-13 | 1992-05-19 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Thermal decomposition trap |
US5199856A (en) * | 1989-03-01 | 1993-04-06 | Massachusetts Institute Of Technology | Passive structural and aerodynamic control of compressor surge |
US5183646A (en) * | 1989-04-12 | 1993-02-02 | Custom Engineered Materials, Inc. | Incinerator for complete oxidation of impurities in a gas stream |
US5292704A (en) * | 1989-05-01 | 1994-03-08 | Allied-Signal Inc. | Catalyst for destruction of organohalogen compounds |
US5176897A (en) * | 1989-05-01 | 1993-01-05 | Allied-Signal Inc. | Catalytic destruction of organohalogen compounds |
US4986838A (en) * | 1989-06-14 | 1991-01-22 | Airgard, Inc. | Inlet system for gas scrubber |
US5206003A (en) * | 1989-07-07 | 1993-04-27 | Ngk Insulators, Ltd. | Method of decomposing flow |
US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
US5207836A (en) * | 1989-08-25 | 1993-05-04 | Applied Materials, Inc. | Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus |
US5000221A (en) * | 1989-09-11 | 1991-03-19 | Palmer David W | Flow control system |
US5011520A (en) * | 1989-12-15 | 1991-04-30 | Vector Technical Group, Inc. | Hydrodynamic fume scrubber |
US5113789A (en) * | 1990-04-24 | 1992-05-19 | Watkins Johnson Company | Self cleaning flow control orifice |
US5118286A (en) * | 1991-01-17 | 1992-06-02 | Amtech Systems | Closed loop method and apparatus for preventing exhausted reactant gas from mixing with ambient air and enhancing repeatability of reaction gas results on wafers |
US5122391A (en) * | 1991-03-13 | 1992-06-16 | Watkins-Johnson Company | Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD |
US5211729A (en) * | 1991-08-30 | 1993-05-18 | Sematech, Inc. | Baffle/settling chamber for a chemical vapor deposition equipment |
US5597540A (en) * | 1991-12-11 | 1997-01-28 | Japan Pionics Co., Ltd. | Process for cleaning harmful gas |
US5281302A (en) * | 1992-01-27 | 1994-01-25 | Siemens Aktiengesellschaft | Method for cleaning reaction chambers by plasma etching |
US5280664A (en) * | 1992-03-20 | 1994-01-25 | Lin Mary D | Disposable household cleaning devices |
US5510066A (en) * | 1992-08-14 | 1996-04-23 | Guild Associates, Inc. | Method for free-formation of a free-standing, three-dimensional body |
US5393394A (en) * | 1992-08-18 | 1995-02-28 | Kabushiki Kaisha Toshiba | Method and apparatus for decomposing organic halogen-containing compound |
US5599508A (en) * | 1993-06-01 | 1997-02-04 | The Babcock & Wilcox Company | Flue gas conditioning for the removal of acid gases, air toxics and trace metals |
US5304398A (en) * | 1993-06-03 | 1994-04-19 | Watkins Johnson Company | Chemical vapor deposition of silicon dioxide using hexamethyldisilazane |
US5425886A (en) * | 1993-06-23 | 1995-06-20 | The United States Of America As Represented By The Secretary Of The Navy | On demand, non-halon, fire extinguishing systems |
US5601790A (en) * | 1993-07-16 | 1997-02-11 | Thermatrix, Inc. | Method and afterburner apparatus for control of highly variable flows |
US5527631A (en) * | 1994-02-18 | 1996-06-18 | Westinghouse Electric Corporation | Hydrocarbon reforming catalyst material and configuration of the same |
US6030591A (en) * | 1994-04-06 | 2000-02-29 | Atmi Ecosys Corporation | Process for removing and recovering halocarbons from effluent process streams |
US5495893A (en) * | 1994-05-10 | 1996-03-05 | Ada Technologies, Inc. | Apparatus and method to control deflagration of gases |
US5407647A (en) * | 1994-05-27 | 1995-04-18 | Florida Scientific Laboratories Inc. | Gas-scrubber apparatus for the chemical conversion of toxic gaseous compounds into non-hazardous inert solids |
US5510093A (en) * | 1994-07-25 | 1996-04-23 | Alzeta Corporation | Combustive destruction of halogenated compounds |
US5603905A (en) * | 1994-07-25 | 1997-02-18 | Alzeta Corporation | Apparatus for combustive destruction of troublesome substances |
US5494004A (en) * | 1994-09-23 | 1996-02-27 | Lockheed Corporation | On line pulsed detonation/deflagration soot blower |
US5900217A (en) * | 1995-01-23 | 1999-05-04 | Centrotherm Elektrische Anlagen Gmbh & Co. | Apparatus for purifying waste gases |
US5749720A (en) * | 1995-04-21 | 1998-05-12 | Nkk Corporation | Gas heating apparatus with dual burners |
US5858065A (en) * | 1995-07-17 | 1999-01-12 | American Air Liquide | Process and system for separation and recovery of perfluorocompound gases |
US5720931A (en) * | 1995-07-21 | 1998-02-24 | Guild Associates, Inc. | Catalytic oxidation of organic nitrogen-containing compounds |
US5762893A (en) * | 1995-09-01 | 1998-06-09 | Cs-Gmbh Halbleiter-Und Solartechnologie | Method for cleaning gases containing ozone-depleting and/or climate-active halogenated compounds |
US6187072B1 (en) * | 1995-09-25 | 2001-02-13 | Applied Materials, Inc. | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions |
US5891404A (en) * | 1995-10-16 | 1999-04-06 | Teisan Kabushiki Kaisha | Exhaust gas treatment unit |
US5716428A (en) * | 1995-11-29 | 1998-02-10 | Kanken Techno Co., Ltd. | Method for removing harmful substances of exhaust gas discharged from semiconductor manufacturing process |
US6009827A (en) * | 1995-12-06 | 2000-01-04 | Applied Materials, Inc. | Apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films |
US5865879A (en) * | 1995-12-22 | 1999-02-02 | Samsung Electronics Co., Ltd. | Gas scrubber used in fabricating semiconductor devices and gas filtering method using the same |
US5756052A (en) * | 1995-12-26 | 1998-05-26 | Mitsubishi Jukogyo Kabushiki Kaisha | Flue gas treatment system |
US5720444A (en) * | 1996-01-24 | 1998-02-24 | Guild International Inc. | Strip accumulators |
US5877391A (en) * | 1996-03-05 | 1999-03-02 | Hitachi, Ltd. | Method for treating gas containing organohalogen compounds, and catalyst for decomposing the organohalogen compounds |
USH1701H (en) * | 1996-03-15 | 1998-01-06 | Motorola, Inc. | Method and apparatus for using molten aluminum to abate PFC gases from a semiconductor facility |
US5759237A (en) * | 1996-06-14 | 1998-06-02 | L'air Liquide Societe Anonyme Pour L'etude Et, L'exploitation Des Procedes Georges Claude | Process and system for selective abatement of reactive gases and recovery of perfluorocompound gases |
US6234787B1 (en) * | 1996-08-14 | 2001-05-22 | Nippon Sanso Corporation | Combustion type harmful substance removing apparatus |
US5759498A (en) * | 1996-12-12 | 1998-06-02 | United Microelectronics Corp. | Gas exhaust apparatus |
US20010001652A1 (en) * | 1997-01-14 | 2001-05-24 | Shuichi Kanno | Process for treating flourine compound-containing gas |
US6013584A (en) * | 1997-02-19 | 2000-01-11 | Applied Materials, Inc. | Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications |
US5855648A (en) * | 1997-06-05 | 1999-01-05 | Praxair Technology, Inc. | Solid electrolyte system for use with furnaces |
US5855822A (en) * | 1997-08-22 | 1999-01-05 | Chen; Tsong-Maw | Water discharge module for semi-conductor exhaust treatment apparatus |
US6059858A (en) * | 1997-10-30 | 2000-05-09 | The Boc Group, Inc. | High temperature adsorption process |
US6511641B2 (en) * | 1998-01-12 | 2003-01-28 | Advanced Technology Materials, Inc. | Method for abatement of gaseous pollutants |
US6338312B2 (en) * | 1998-04-15 | 2002-01-15 | Advanced Technology Materials, Inc. | Integrated ion implant scrubber system |
US6185839B1 (en) * | 1998-05-28 | 2001-02-13 | Applied Materials, Inc. | Semiconductor process chamber having improved gas distributor |
US6190507B1 (en) * | 1998-07-24 | 2001-02-20 | The United States Of America As Represented By The Department Of Energy | Method for generating a highly reactive plasma for exhaust gas aftertreatment and enhanced catalyst reactivity |
US6010576A (en) * | 1998-08-27 | 2000-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for cleaning an exhaust gas reactor |
US6345768B1 (en) * | 1999-06-03 | 2002-02-12 | Paloma Industries, Limited | Control valve for vessel gas water heater |
US6217640B1 (en) * | 1999-08-09 | 2001-04-17 | United Microelectronics Corp. | Exhaust gas treatment apparatus |
US6187080B1 (en) * | 1999-08-09 | 2001-02-13 | United Microelectronics Inc. | Exhaust gas treatment apparatus including a water vortex means and a discharge pipe |
US6361584B1 (en) * | 1999-11-02 | 2002-03-26 | Advanced Technology Materials, Inc. | High temperature pressure swing adsorption system for separation of oxygen-containing gas mixtures |
US6544482B1 (en) * | 2000-03-14 | 2003-04-08 | Advanced Technology Materials, Inc. | Chamber cleaning mechanism |
US6527828B2 (en) * | 2001-03-19 | 2003-03-04 | Advanced Technology Materials, Inc. | Oxygen enhanced CDA modification to a CDO integrated scrubber |
US7160521B2 (en) * | 2001-07-11 | 2007-01-09 | Applied Materials, Inc. | Treatment of effluent from a substrate processing chamber |
US7047893B2 (en) * | 2002-06-03 | 2006-05-23 | Loving Ronald E | Pollution abatement incinerator system |
US6875007B2 (en) * | 2002-08-07 | 2005-04-05 | General Motors Corporation | Multiple port catalytic combustion device and method of operating same |
US20060024226A1 (en) * | 2002-09-16 | 2006-02-02 | Yong-Ki Park | Catalyst and method for decomposition of perfluoro-compound in waste gas |
US20040065013A1 (en) * | 2002-10-03 | 2004-04-08 | Devries Peter David | Reforming and hydrogen purification system |
US6843830B2 (en) * | 2003-04-15 | 2005-01-18 | Advanced Technology Materials, Inc. | Abatement system targeting a by-pass effluent stream of a semiconductor process tool |
US7316721B1 (en) * | 2004-02-09 | 2008-01-08 | Porvair, Plc | Ceramic foam insulator with thermal expansion joint |
US20060104879A1 (en) * | 2004-11-12 | 2006-05-18 | Applied Materials, Inc. | Reactor design to reduce particle deposition during process abatement |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050135984A1 (en) * | 2003-12-19 | 2005-06-23 | Shawn Ferron | Apparatus and method for controlled combustion of gaseous pollutants |
US7985379B2 (en) | 2004-11-12 | 2011-07-26 | Applied Materials, Inc. | Reactor design to reduce particle deposition during process abatement |
US7736599B2 (en) | 2004-11-12 | 2010-06-15 | Applied Materials, Inc. | Reactor design to reduce particle deposition during process abatement |
US7700049B2 (en) | 2005-10-31 | 2010-04-20 | Applied Materials, Inc. | Methods and apparatus for sensing characteristics of the contents of a process abatement reactor |
US7736600B2 (en) | 2005-10-31 | 2010-06-15 | Applied Materials, Inc. | Apparatus for manufacturing a process abatement reactor |
US20080047586A1 (en) * | 2006-08-23 | 2008-02-28 | Loldj Youssef A | Systems and methods for operating and monitoring abatement systems |
US20100257710A1 (en) * | 2007-07-25 | 2010-10-14 | Stuendl Mathias | Apparatus for treating a multifilament thread |
US20090149996A1 (en) * | 2007-12-05 | 2009-06-11 | Applied Materials, Inc. | Multiple inlet abatement system |
US10947138B2 (en) | 2011-12-06 | 2021-03-16 | Delta Faucet Company | Ozone distribution in a faucet |
US9919939B2 (en) | 2011-12-06 | 2018-03-20 | Delta Faucet Company | Ozone distribution in a faucet |
US20170023447A1 (en) * | 2015-07-20 | 2017-01-26 | Cooper Environmental Services Llc | Sample fluid stream probe gas sheet nozzle |
US9746397B2 (en) * | 2015-07-20 | 2017-08-29 | Cooper Environmental Services Llc | Sample fluid stream probe gas sheet nozzle |
US11458214B2 (en) | 2015-12-21 | 2022-10-04 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
US20170297066A1 (en) * | 2016-04-15 | 2017-10-19 | Applied Materials, Inc. | Plasma abatement solids avoidance by use of oxygen plasma cleaning cycle |
US10625312B2 (en) * | 2016-04-15 | 2020-04-21 | Applied Materials, Inc. | Plasma abatement solids avoidance by use of oxygen plasma cleaning cycle |
CN110461437A (en) * | 2017-01-06 | 2019-11-15 | 阿尔泽塔公司 | System and method for improving emission abatement |
US10690341B2 (en) * | 2017-01-06 | 2020-06-23 | Alzeta Corporation | Systems and methods for improved waste gas abatement |
EP3565654A4 (en) * | 2017-01-06 | 2020-10-28 | Alzeta Corporation | Systems and methods for improved waste gas abatement |
KR20190112725A (en) * | 2017-01-06 | 2019-10-07 | 알제타 코포레이션 | Systems and Methods for Improved Waste Gas Reduction |
KR102450538B1 (en) * | 2017-01-06 | 2022-10-04 | 알제타 코포레이션 | Systems and methods for improved waste gas abatement |
US20180259182A1 (en) * | 2017-01-06 | 2018-09-13 | Alzeta Corporation | Systems and methods for improved waste gas abatement |
US10685818B2 (en) | 2017-02-09 | 2020-06-16 | Applied Materials, Inc. | Plasma abatement technology utilizing water vapor and oxygen reagent |
US20220010960A1 (en) * | 2018-11-22 | 2022-01-13 | Edwards Limited | Abatement |
Also Published As
Publication number | Publication date |
---|---|
JP2011174695A (en) | 2011-09-08 |
CN101300411A (en) | 2008-11-05 |
US20070172399A1 (en) | 2007-07-26 |
WO2007053626A3 (en) | 2007-12-21 |
US20070190469A1 (en) | 2007-08-16 |
TW200727969A (en) | 2007-08-01 |
KR101036734B1 (en) | 2011-05-24 |
US7736600B2 (en) | 2010-06-15 |
US7700049B2 (en) | 2010-04-20 |
US20070172398A1 (en) | 2007-07-26 |
KR20080074923A (en) | 2008-08-13 |
JP2009513347A (en) | 2009-04-02 |
EP1954926A2 (en) | 2008-08-13 |
JP5102217B2 (en) | 2012-12-19 |
WO2007053626A2 (en) | 2007-05-10 |
TWI336633B (en) | 2011-02-01 |
CN101300411B (en) | 2012-10-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7700049B2 (en) | Methods and apparatus for sensing characteristics of the contents of a process abatement reactor | |
US7985379B2 (en) | Reactor design to reduce particle deposition during process abatement | |
US7569193B2 (en) | Apparatus and method for controlled combustion of gaseous pollutants | |
US20200309367A1 (en) | Systems and methods for improved waste gas abatement | |
EP2340101B1 (en) | Apparatus and method for scrubbing gases |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CLARK, DANIEL O.;RAOUX, SEBASTIEN;VERMEULEN, ROBERT;AND OTHERS;REEL/FRAME:019098/0113;SIGNING DATES FROM 20070308 TO 20070313 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- AFTER EXAMINER'S ANSWER OR BOARD OF APPEALS DECISION |