US20060237308A1 - Contact ring with embedded flexible contacts - Google Patents

Contact ring with embedded flexible contacts Download PDF

Info

Publication number
US20060237308A1
US20060237308A1 US11/475,584 US47558406A US2006237308A1 US 20060237308 A1 US20060237308 A1 US 20060237308A1 US 47558406 A US47558406 A US 47558406A US 2006237308 A1 US2006237308 A1 US 2006237308A1
Authority
US
United States
Prior art keywords
contact
ring
substrate
pins
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/475,584
Inventor
Harald Herchen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to US11/475,584 priority Critical patent/US20060237308A1/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HERCHEN, HARALD
Publication of US20060237308A1 publication Critical patent/US20060237308A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • C25D17/12Shape or form
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06Suspending or supporting devices for articles to be coated
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer

Definitions

  • Embodiments of the invention generally relate to electrochemical plating and, more particularly, to a contact ring for an electrochemical plating system.
  • Metallization of sub-quarter micron sized features is a foundational technology for present and future generations of integrated circuit manufacturing processes. More particularly, in devices such as ultra large scale integration-type devices, i.e., devices having integrated circuits with more than a million logic gates, the multilevel interconnects that lie at the heart of these devices are generally formed by filling high aspect ratio (greater than about 4:1, for example) interconnect features with a conductive material, such as copper or aluminum, for example.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • plating techniques such as electrochemical plating (ECP) and electroless plating, for example, have emerged as promising processes for void free filling of sub-quarter micron sized high aspect ratio interconnect features in integrated circuit manufacturing processes.
  • an ECP process for example, sub-quarter micron sized high aspect ratio features formed into the surface of a substrate (or a layer-deposited thereon) may be efficiently filled with a conductive material, such as copper, for example.
  • An ECP processes generally includes first depositing a seed layer over the surface and into features of the substrate (the seed layer deposition process is generally separate from the ECP plating process), and then the surface features of the substrate are exposed to an electrochemical plating solution, while an electrical bias is simultaneously applied between the substrate and an anode positioned in the plating solution.
  • the plating solution is generally rich in positive ions to be plated onto the surface of the substrate, and therefore, the application of the electrical bias causes these positive ions to be urged out of the plating solution and to be plated onto the seed layer.
  • the electrical bias is provided to the substrate via one or more electrical contacts distributed around the perimeter of the substrate being plated.
  • the seed layer formed on the substrate may extend from a plating surface around beveled edges of the substrate, and possibly extend onto a non-plating surface or backside of the substrate.
  • the electrical contacts may be in electrical contact with either the plating surface (frontside) or the non-plating surface (backside) of the substrate. Regardless of location, it is generally desirable to isolate the electrical contacts, as well as the non-plating surface of the substrate from the plating material in order to avoid plating of the positive ions on the contacts, as plating on the electrical contacts may alter the resistance of the electrical contacts and have a negative effect on the substrate plating uniformity.
  • Conventional approaches to isolate the electrical contacts and non-plating surface from the plating solution typically include providing one or more sealing elements to contact the same surface of the substrate as the electrical contacts.
  • sealing members positioned to engage the plating surface may be placed adjacent electrical contacts positioned to contact the plating surface.
  • the sealing members and electrical contacts also provide support for the substrate.
  • the combination of the electrical contacts and the associated seals generally takes up several millimeters (generally between 3 and about 7 millimeters) of the perimeter of the plating surface area. Since this surface area is used to make electrical and seal contacts, the area cannot be used to support device formation.
  • some systems may include sealing members positioned to engage the non-plating surface adjacent electrical contacts positioned to contact the non-plating surface.
  • some other means may be needed to support the substrate.
  • a vacuum is applied to the substrate, to pull the non-plating surface up into contact with the sealing members and electrical contacts.
  • the vacuum applied to the substrate may create a stress on the substrate, and may lead to substrate breakage. If the sealing members happen to leak, the vacuum may be unable to maintain the substrate against the electrical contacts with sufficient force and the plating solution may enter the vacuum, causing damage to the vacuum.
  • the contact pins engage the plating surface of the substrate
  • the contact pins are generally surrounded by a seal configured to prevent the electroplating solution from coming into contact with the electrical contact pins.
  • dry contact pins present challenges in maintaining a fluid tight seal between the substrate, and as such, fluid often penetrates the seals and is exposed to the contact pins, which alters the pin resistance and the plating uniformity.
  • conventional contact rings utilize fixed electrical contacts, and therefore, when a substrate being plated is not entirely planar, the various fixed contacts will have varying degrees of success contacting the substrate.
  • Embodiments of the invention generally provide a contact assembly for supporting a substrate in an electrochemical plating system, wherein that contact assembly includes a contact ring and a thrust plate assembly.
  • the contact ring includes an annular ring member having an upper surface and a lower surface, an annular bump member positioned on the upper surface, and a plurality of flexible and conductive substrate contact fingers extending radially inward from the lower surface.
  • the thrust plate includes an annular plate member sized to be received within the annular ring member, and a seal member extending radially outward from the plate member, the seal member being configured to engage the annular bump member for form a fluid seal therewith.
  • Embodiments of the invention further provide a contact ring for an electrochemical plating system.
  • the contact ring generally includes an upper ring member, a lower ring member secured to the upper ring member via a plurality of support members, the lower ring member having an inwardly extending flange, a plurality of vertically flexible conductive contact pins extending radially inward from the lower ring member, an electrically insulating layer covering the plurality of the vertically flexible conductive contact pins, and a plurality of conductive tip members affixed to a terminating end of each of the plurality of vertically flexible conductive contact pins.
  • Embodiments of the invention further provide a substrate contact assembly for an electrochemical plating system.
  • the substrate contact assembly generally includes an electrically conductive contact ring, a first electrically insulating layer covering outer surfaces of the contact ring, a plurality of electrically conductive flexible contact fingers extending radially inward from the contact ring, and a second electrically insulating layer covering a body portion of the contact fingers, the second electrically insulating layer being configured to flex with the contact fingers while maintaining electrical isolation of the body portion.
  • FIG. 1 illustrates a sectional view of an exemplary electrochemical plating cell incorporating an embodiment of a contact ring of the invention.
  • FIG. 2 is a perspective view of an exemplary contact ring of the invention with a thrust plate positioned in contact with the contact ring.
  • FIG. 3 is a sectional view of an exemplary contact ring of the invention.
  • FIG. 4 is a plan view of an exemplary contact pin ring of the invention.
  • Embodiments of the invention generally provide a contact ring configured to secure and electrically contacting a substrate in an electrochemical plating system.
  • the contact ring generally includes a plurality of electrical contact pins radially positioned and configured to electrically contact a substrate being plated proximate the perimeter of the substrate. Further, although the contact pins are embedded within an insulative body, the contact pins are configured to be partially flexible and implemented in a wet contact configuration.
  • FIG. 1 illustrates a sectional view of an exemplary electrochemical plating (ECP) system 100 of the invention.
  • the ECP system 100 generally includes a head assembly actuator 102 , a substrate holder assembly 110 , and a plating basin assembly 160 .
  • the head actuator assembly 102 is generally attached to a supporting base 104 by a pivotally mounted support arm 106 .
  • the head actuator assembly 102 is adapted to support the substrate holder assembly 110 (also generally referred to as an ECP contact ring) at various positions above the plating basin 160 , and more particularly, the actuator assembly 102 is configured to position the substrate holder assembly 110 into a plating solution contained within basin 160 for plating operations.
  • Head actuator 102 may generally be configured to rotate, vertically actuate, and tilt the substrate holder assembly 110 attached thereto before, during, and after the substrate 120 is placed in the plating solution.
  • the plating basin 160 generally includes an inner basin 162 , contained within a larger diameter outer basin 164 . Any suitable technique may be used to supply a plating solution to the plating assembly 160 .
  • a plating solution may be supplied to the inner basin 162 through an inlet 166 at a bottom surface of the inner basin 162 .
  • the inlet 166 may be connected to a supply line, for example, from an electrolyte reservoir system (not shown).
  • the outer basin 164 may operate to collect fluids from the inner basin 162 and drain the collected fluids via a fluid drain 168 , which may also be connected to the electrolyte reservoir system and configured to return collected fluids thereto.
  • An anode assembly 170 is generally positioned in a lower region of inner basin 162 .
  • a diffusion member 172 may be generally positioned across the diameter of inner basin at a position above the anode assembly 170 .
  • the anode assembly 170 may be any suitable consumable or non-consumable-type anode, e.g., copper, platinum, etc.
  • the diffusion member 172 may be any suitable type of permeable material, such as a porous ceramic disk member, for example.
  • the diffusion member 172 is generally configured to generate an even flow of electrolyte solution therethrough in the direction of the substrate being plated, and further, to provide a degree of control over the electrical flux traveling between the anode and the substrate being plated.
  • an electrical connection to the anode assembly 170 may be provided through an anode electrode contact 174 .
  • the anode electrode contact 174 may be made from any suitable conductive material that is insoluble in the plating solution, such as titanium, platinum and platinum-coated stainless steel. As illustrated, the anode electrode contact 174 may extend through a bottom surface of the plating bath assembly 160 and may be connected to an electrical power supply (not shown), for example, through any suitable wiring conduit.
  • the substrate holding assembly 110 which is shown in perspective in FIG. 2 and in section in FIG. 3 , generally includes an upper contact ring mounting member 112 attached to lower contact ring 114 via vertical attachment/support members 116 .
  • the mounting member 112 generally allows for attachment of the substrate holding assembly 110 to the head actuator assembly 102 .
  • the upper contact ring-mounting member 112 is generally configured to receive electrical power from the power supply (not shown) and conduct the electrical power through the support members 116 to the contact pins 310 in the lower portion 114 of the contact ring.
  • the electrical power is generally conducted through the respective elements via an internal conductive portion (not shown) of the respective members.
  • mounting member and support members 116 may be manufactured from a conductive material, and as such, the members themselves may be used to conduct the electrical power to the contact pins 310 .
  • the conductive surfaces of the respective members is generally coated or covered with an electrically insulating material, as exposed conductive surfaces will be plated on when the assembly is immersed in a plating solution.
  • the conductive surfaces of the substrate holding assembly 110 are coated with a PTFE material, such as Aflon®, Viton®, or any other suitable plating-resistant coating material.
  • the lower contact ring portion 114 generally extends radially inward of the support members 116 . Additionally, ring portion 114 generally includes the contact pins 310 , either through an integrated manufacturing process or through an add on process.
  • FIG. 4 illustrates a plan view of an exemplary contact pin ring 400 , wherein ring 400 is configured to be secured to the lower ring portion 114 to form contacts pins 310 .
  • the contact pin ring 400 generally includes an outer base portion 401 that has a plurality of flexible electrical contact elements 402 extending radially inward therefrom.
  • the base portion 401 also generally includes a plurality of holes 403 formed therethrough, which allow for ring 400 to be bolted, brazed, or otherwise affixed to a lower surface of a contact ring assembly, such as assembly 110 , for example.
  • the substrate holding assembly 110 generally includes the upper member (not shown in FIG. 3 ), the support or middle member 116 , and the ring member 114 .
  • a contact pin assembly such as ring 400 illustrated in FIG. 4 , is generally attached to the lower surface of ring 114 if the contact pins 310 are not integrally manufactured into ring member 114 .
  • the exemplary contact pin assembly illustrated in FIG. 3 includes a conductive core member 306 , which may be manufactured from stainless steel, copper, gold, or other conductive material, that also has at least a minimal amount of flexibility at room temperatures or slightly below, e.g., at the temperature of an electrochemical plating solution in an ECP process.
  • the conductive core 306 is generally coated with an electrically insulative layer 304 that is resistant to plating solutions, i.e., the coating does not react with plating solutions or facilitate plating on the coating.
  • the insulating layer 304 is generally a Viton® or Aflon® layer, or a layer of another material that is both electrically insulative and resistant to electrochemical plating solutions, as well as being flexible and//or capable of bending without cracking, breaking, or otherwise allowing the plating solution to permeate through the coating to the underlying layer.
  • the contact pins 310 are generally positioned on the contact ring 114 in a configuration such that the contacts 310 contact the perimeter of a substrate positioned on the contact ring 114 , e.g., the contact pins 310 are generally positioned in an annular pattern and extend radially inward, such that a perimeter of a substrate may be supported by the terminating ends/contact points 308 of the contact pins 308 .
  • the contact pins 310 may vary in number, for example, according to a size of the substrate being plated.
  • the contact pins 310 may be made of any suitable conductive material, such as copper (Cu), platinum (Pt), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag), stainless steel, indium, palladium and alloys thereof, or other conducting materials amenable to electrochemical plating processes.
  • conductive materials such as copper (Cu), platinum (Pt), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag), stainless steel, indium, palladium and alloys thereof, or other conducting materials amenable to electrochemical plating processes.
  • Power may be supplied to the contacts 310 via a power supply (not shown).
  • the power supply may supply electrical power to all of the electrical contacts 310 cooperatively, banks or groups of the electrical contacts 310 , or to each of the contacts 310 individually.
  • a current control system may be employed to control the current applied to each group or bank of pins.
  • Contacts 310 which are generally shown in FIG. 3 , are generally attached to a lower surface of the contact ring 114 . However, embodiments of the invention are not limited to this configuration, as it is contemplated that the contacts 310 may be integrally formed into the contact ring 114 , or alternatively, attached to the contact ring 114 in a different configuration.
  • Each of the individual contact pins 310 includes an electrically conductive core 306 .
  • the conductive material used to manufacture the core 306 is generally selected to be both conductive and flexible, as the individual contact pins are configured to be flexible in at least one direction.
  • each of the contact pins 310 are generally configured to move horizontally, i.e., in the direction of arrow 311 , in order to facilitate engagement of a substrate that is not completely planar. For example, if a substrate is not completely planar (or if the contact pins are not aligned in a horizontal plane), then a substrate that is positioned in the contact ring of the invention will engage some of the contact pins 310 and not others.
  • each of the individual contact pins 310 are configured to be flexible so that this type of situation may be remedied via application of pressure to the backside of the substrate. This pressure causes the substrate to press against the contact pins 310 and slightly deflect the pins downward in the direction of arrow 311 .
  • the flexibility of the contact pins 310 allows for optimal contact with the substrate, i.e., all of the contact pins 310 are caused to electrically engage the substrate.
  • the insulating layer 304 is formed onto the conductive surfaces of the upper ring member 112 , the vertical support members 116 , and the lower ring member 114 in order to simplify manufacturing processes and decrease cost. More particularly, in conventional contact ring applications a conductive core had to be formed into the insulative body of the contact ring, which is a costly and time consuming process. Embodiments of the invention solve this problem by manufacturing the contact ring components from conductive materials and then coating the conductive surfaces with the insulating layer 304 .
  • various insulating layers may be utilized, i.e., one insulating material (a rigid material, for example) may be used to coat the ring components 112 , 114 , and 116 , and then another insulating layer (a flexible layer, for example) may be used to coat the contact pins 306 .
  • one insulating material a rigid material, for example
  • another insulating layer a flexible layer, for example
  • the thrust plate 140 discussed in FIG. 1 is generally utilized. More particularly, the thrust plate 140 is generally actuated in a vertical manner to physically engage the backside of the substrate being positioned in the contact ring 114 for plating. The thrust plate 140 pushes against the backside of the substrate to mechanically bias the substrate against the contacts 310 , and during this process the pins 310 that are in engagement with high spots on the substrate or the pins that are positioned higher (vertically) than other pins 310 are caused to flex or bend downward. This downward motion allows for the remaining contact pins 310 to also engage the substrate, and as such, all of the contact pins 310 are brought into physical and electrical engagement with the substrate.
  • thrust plate assembly 140 may also include seal means configured to prevent liquid from extending over the backside of the wafer.
  • the seal means is desirable, as it operates to prevent backside fluid contact from occurring. This makes it easier to remove any backside deposition residue and helps to ensure that the robot blade gets a dry wafer to apply vacuum on.
  • the seal member 302 is generally positioned on an upper portion of the thrust plate 140 and is configured to engage an upper portion of the contact ring 114 when the thrust plate 140 is extended and in contact with a substrate 122 .
  • the seal 302 generally includes a curved sealing surface 315 that is configured to engage a seal bump 317 formed on the upper surface of the contact ring 114 .
  • Both the sealing surface 315 and seal bump 317 are generally annularly shaped and of the same radius, so that the bump and surface meet contiguously when the thrust plate is extended.
  • the seal 302 may operate to prevent plating solution from flowing over the outer perimeter of the contact ring 114 and to the backside of the substrate being plated.
  • the sealing member 302 may be manufactured from materials such as nitrile, bunan, silicone, rubber, neoprene, polyurethane and teflon encapsulated elastomers.
  • seal 302 may be manufactured at least partially of a perfluoroelastomer material, such as perfluoroelastomer materials sold under the trade names Chemraz®, Kalrez®, Perlast®, Simriz®, and Viton®. Further, the insulative coating applied to the contacts 310 may be coated with the same material that the seal 302 may be manufactured from.
  • a perfluoroelastomer material such as perfluoroelastomer materials sold under the trade names Chemraz®, Kalrez®, Perlast®, Simriz®, and Viton®.
  • Sealing member 302 may include a body portion 352 attached to the thrust plate assembly 140 and an annular portion 315 extending from the base portion 352 . As illustrated, the annular portion 315 may be substantially perpendicular to the body portion 352 . The sealing member 302 may be adapted to engage the annular ring 118 formed on the top surface of the contact ring 114 with the annular portion 315 . Particularly, an inner surface of the annular portion 315 may engage an outer surface of the annular bump/ring 317 . Thus, the annular portion 315 may exert a radial sealing force (F RADIAL ) directed radially inward, i.e., substantially parallel to the substrate 120 .
  • F RADIAL radial sealing force
  • the size and shape of sealing member 302 may be designed to ensure adequate radial force is generated to provide adequate sealing.
  • an outer diameter of the back side radial seal 302 (to an outer surface of the annular portion 315 ) may be chosen to be slightly larger (e.g., less than 5 mm) than an outer diameter of the bump 317 .
  • the annular portion 315 may flex radially outward to engage the annular bump 317 , resulting in an adequate radial seal without excessive downward force.
  • an inner edge of the back side sealing member 302 where the annular portion 315 extends from the body portion 352 may be substantially rounded to mate with a substantially rounded top surface of the annular bump 317 .
  • each of the individual contacts 310 include conductive tip members affixed to the distal contact point of each of the contacts 310 .
  • the tip members are generally manufactured from copper (Cu), platinum (Pt), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag), stainless steel, indium, palladium, and/or alloys thereof.
  • the core portion 306 of the contact ring may be manufactured from a more cost effective material, while the portions of the contact ring that electrically engage the substrate surface, i.e., the distal ends 308 of contacts 310 may be manufactured from a material that has improved electrical contact characteristics over the core material.
  • the core of the contact ring may be manufactured from the same material used to electrically contact the substrate, manufacturing the core from the contact/tip material will generally increase the cost of the contact ring substantially. Therefore, in order to maintain a cost effective contact ring, while also providing improved electrical contact characteristics between the contact ring and the substrate, embodiments of the present invention utilize a contact ring that includes a cost effective core portion that has a material that provides improved electrical contact characteristics brazed or otherwise affixed to the distal portions 308 of the contact fingers 310 .
  • the contact ring of this embodiment may include a core that is manufactured from a standard steel, such as stainless steel, for example.
  • the core provides a conductive medium through the main body of the contact ring and generally provides the supporting structure or backbone of the contact ring.
  • the terminating end or contact point 308 of each of the contact fingers 310 may include a portion of another metal.
  • each of the tips 308 may have a slug of (Cu), platinum (Pt), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag), indium, palladium, and/or alloys thereof brazed thereto.
  • the slug that is brazed to the contact tip 308 may be sized and shaped for optimal substrate contact.
  • the process of brazing slugs to each of the contact tips 308 may generally include a single brazing operation that may then be separated into the plurality of fingers 402 .
  • finger portions 402 may be manufactured last.
  • the outer ring 401 base portion
  • the process of forming the outer ring 401 may further include forming an inner ring that may be subsequently used to form fingers 402 , however, the inner ring is left as a solid at this point in the process.
  • the cross section of the inner ring is generally manufactured to be the same cross section as the contact fingers 402 (including the contact tips that will be formed later).
  • a ring of material may be brazed to the annular contact tip portion of the inner ring before the finger portions 402 are formed.
  • the tip ring portion which is generally synonymous with the slug discussed above, may be formed of a material that provides optimal electrical contact characteristics with substrates, adheres well to the core material of the contact ring, and reacts favorably to electrochemical plating solutions.
  • Exemplary ring materials include platinum, tantalum, titanium, indium, palladium, and alloys thereof.
  • the contact finger portions 402 may be formed from the inner ring having the tip ring brazed thereto. This process may generally include cutting the spaces that are between fingers 402 from the inner ring.
  • the inner ring is generally a solid annular piece that has the tip ring brazed thereto, a plurality of cuts may be made into the inner ring to form the fingers. For example, cuts may be made close to each other, which leaves an extending portion of the ring remaining between the cuts. This extending portion may be configured to be the contact fingers 402 of the contact ring. Therefore, the desired width of the contact fingers may be determined by the spacing of the cuts of the inner ring. Further, since the tip ring portion is brazed to the inner ring, when the cuts are made, each individual finger is formed with a razed tip thereon, which would not be easily accomplished if each tip were to be brazed onto each finger individually.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)

Abstract

A contact assembly for supporting a substrate in an electrochemical plating system, wherein that contact assembly includes a contact ring and a thrust plate assembly. The contact ring includes an annular ring member having an upper surface and a lower surface, an annular bump member positioned on the upper surface, and a plurality of flexible and conductive substrate contact fingers extending radially inward from the lower surface. The thrust plate includes an annular plate member sized to be received within the annular ring member, and a seal member extending radially outward from the plate member, the seal member being configured to engage the annular bump member for form a fluid seal therewith.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This application is a continuation of co-pending U.S. patent application Ser. No. 10/355,479, filed Jan. 31, 2003, which is incorporated herein as reference.
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • Embodiments of the invention generally relate to electrochemical plating and, more particularly, to a contact ring for an electrochemical plating system.
  • 2. Description of the Related Art
  • Metallization of sub-quarter micron sized features is a foundational technology for present and future generations of integrated circuit manufacturing processes. More particularly, in devices such as ultra large scale integration-type devices, i.e., devices having integrated circuits with more than a million logic gates, the multilevel interconnects that lie at the heart of these devices are generally formed by filling high aspect ratio (greater than about 4:1, for example) interconnect features with a conductive material, such as copper or aluminum, for example. Conventionally, deposition techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) have been used to fill these interconnect features. However, as the interconnect sizes decrease and aspect ratios increase, void-free interconnect feature fill via conventional metallization techniques becomes increasingly difficult. As a result thereof, plating techniques, such as electrochemical plating (ECP) and electroless plating, for example, have emerged as promising processes for void free filling of sub-quarter micron sized high aspect ratio interconnect features in integrated circuit manufacturing processes.
  • In an ECP process, for example, sub-quarter micron sized high aspect ratio features formed into the surface of a substrate (or a layer-deposited thereon) may be efficiently filled with a conductive material, such as copper, for example. An ECP processes generally includes first depositing a seed layer over the surface and into features of the substrate (the seed layer deposition process is generally separate from the ECP plating process), and then the surface features of the substrate are exposed to an electrochemical plating solution, while an electrical bias is simultaneously applied between the substrate and an anode positioned in the plating solution. The plating solution is generally rich in positive ions to be plated onto the surface of the substrate, and therefore, the application of the electrical bias causes these positive ions to be urged out of the plating solution and to be plated onto the seed layer.
  • Typically, the electrical bias is provided to the substrate via one or more electrical contacts distributed around the perimeter of the substrate being plated. Commonly, the seed layer formed on the substrate may extend from a plating surface around beveled edges of the substrate, and possibly extend onto a non-plating surface or backside of the substrate. Accordingly, for different systems, the electrical contacts may be in electrical contact with either the plating surface (frontside) or the non-plating surface (backside) of the substrate. Regardless of location, it is generally desirable to isolate the electrical contacts, as well as the non-plating surface of the substrate from the plating material in order to avoid plating of the positive ions on the contacts, as plating on the electrical contacts may alter the resistance of the electrical contacts and have a negative effect on the substrate plating uniformity.
  • Conventional approaches to isolate the electrical contacts and non-plating surface from the plating solution typically include providing one or more sealing elements to contact the same surface of the substrate as the electrical contacts. For example, sealing members positioned to engage the plating surface may be placed adjacent electrical contacts positioned to contact the plating surface. The sealing members and electrical contacts also provide support for the substrate. However, the combination of the electrical contacts and the associated seals generally takes up several millimeters (generally between 3 and about 7 millimeters) of the perimeter of the plating surface area. Since this surface area is used to make electrical and seal contacts, the area cannot be used to support device formation.
  • In an effort to utilize this perimeter surface area, some systems may include sealing members positioned to engage the non-plating surface adjacent electrical contacts positioned to contact the non-plating surface. However, without sealing members or electrical contacts on the plating surface to support the substrate, some other means may be needed to support the substrate. Typically, a vacuum is applied to the substrate, to pull the non-plating surface up into contact with the sealing members and electrical contacts. However, the vacuum applied to the substrate may create a stress on the substrate, and may lead to substrate breakage. If the sealing members happen to leak, the vacuum may be unable to maintain the substrate against the electrical contacts with sufficient force and the plating solution may enter the vacuum, causing damage to the vacuum. Further, in systems where the contact pins engage the plating surface of the substrate, the contact pins are generally surrounded by a seal configured to prevent the electroplating solution from coming into contact with the electrical contact pins. Although the concept of dry contact pins is noteworthy, there are several disadvantages of these configurations. Namely, dry contact configurations present challenges in maintaining a fluid tight seal between the substrate, and as such, fluid often penetrates the seals and is exposed to the contact pins, which alters the pin resistance and the plating uniformity. Additionally, conventional contact rings utilize fixed electrical contacts, and therefore, when a substrate being plated is not entirely planar, the various fixed contacts will have varying degrees of success contacting the substrate.
  • Therefore, there is a need for an improved apparatus for securing a substrate in an electrochemical plating system.
  • SUMMARY OF THE INVENTION
  • Embodiments of the invention generally provide a contact assembly for supporting a substrate in an electrochemical plating system, wherein that contact assembly includes a contact ring and a thrust plate assembly. The contact ring includes an annular ring member having an upper surface and a lower surface, an annular bump member positioned on the upper surface, and a plurality of flexible and conductive substrate contact fingers extending radially inward from the lower surface. The thrust plate includes an annular plate member sized to be received within the annular ring member, and a seal member extending radially outward from the plate member, the seal member being configured to engage the annular bump member for form a fluid seal therewith.
  • Embodiments of the invention further provide a contact ring for an electrochemical plating system. The contact ring generally includes an upper ring member, a lower ring member secured to the upper ring member via a plurality of support members, the lower ring member having an inwardly extending flange, a plurality of vertically flexible conductive contact pins extending radially inward from the lower ring member, an electrically insulating layer covering the plurality of the vertically flexible conductive contact pins, and a plurality of conductive tip members affixed to a terminating end of each of the plurality of vertically flexible conductive contact pins.
  • Embodiments of the invention further provide a substrate contact assembly for an electrochemical plating system. The substrate contact assembly generally includes an electrically conductive contact ring, a first electrically insulating layer covering outer surfaces of the contact ring, a plurality of electrically conductive flexible contact fingers extending radially inward from the contact ring, and a second electrically insulating layer covering a body portion of the contact fingers, the second electrically insulating layer being configured to flex with the contact fingers while maintaining electrical isolation of the body portion.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • So that the manner in which the above recited features of the invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments thereof, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of the invention, and are therefore, not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
  • FIG. 1 illustrates a sectional view of an exemplary electrochemical plating cell incorporating an embodiment of a contact ring of the invention.
  • FIG. 2 is a perspective view of an exemplary contact ring of the invention with a thrust plate positioned in contact with the contact ring.
  • FIG. 3 is a sectional view of an exemplary contact ring of the invention.
  • FIG. 4 is a plan view of an exemplary contact pin ring of the invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • Embodiments of the invention generally provide a contact ring configured to secure and electrically contacting a substrate in an electrochemical plating system. The contact ring generally includes a plurality of electrical contact pins radially positioned and configured to electrically contact a substrate being plated proximate the perimeter of the substrate. Further, although the contact pins are embedded within an insulative body, the contact pins are configured to be partially flexible and implemented in a wet contact configuration.
  • FIG. 1 illustrates a sectional view of an exemplary electrochemical plating (ECP) system 100 of the invention. The ECP system 100 generally includes a head assembly actuator 102, a substrate holder assembly 110, and a plating basin assembly 160. The head actuator assembly 102 is generally attached to a supporting base 104 by a pivotally mounted support arm 106. The head actuator assembly 102 is adapted to support the substrate holder assembly 110 (also generally referred to as an ECP contact ring) at various positions above the plating basin 160, and more particularly, the actuator assembly 102 is configured to position the substrate holder assembly 110 into a plating solution contained within basin 160 for plating operations. Head actuator 102 may generally be configured to rotate, vertically actuate, and tilt the substrate holder assembly 110 attached thereto before, during, and after the substrate 120 is placed in the plating solution.
  • The plating basin 160 generally includes an inner basin 162, contained within a larger diameter outer basin 164. Any suitable technique may be used to supply a plating solution to the plating assembly 160. For example, a plating solution may be supplied to the inner basin 162 through an inlet 166 at a bottom surface of the inner basin 162. The inlet 166 may be connected to a supply line, for example, from an electrolyte reservoir system (not shown). The outer basin 164 may operate to collect fluids from the inner basin 162 and drain the collected fluids via a fluid drain 168, which may also be connected to the electrolyte reservoir system and configured to return collected fluids thereto.
  • An anode assembly 170 is generally positioned in a lower region of inner basin 162. A diffusion member 172 may be generally positioned across the diameter of inner basin at a position above the anode assembly 170. The anode assembly 170 may be any suitable consumable or non-consumable-type anode, e.g., copper, platinum, etc. The diffusion member 172 may be any suitable type of permeable material, such as a porous ceramic disk member, for example. The diffusion member 172 is generally configured to generate an even flow of electrolyte solution therethrough in the direction of the substrate being plated, and further, to provide a degree of control over the electrical flux traveling between the anode and the substrate being plated. Any suitable method may be used to provide an electrical connection to the anode assembly 170. For example, an electrical connection to the anode assembly 170 may be provided through an anode electrode contact 174. The anode electrode contact 174 may be made from any suitable conductive material that is insoluble in the plating solution, such as titanium, platinum and platinum-coated stainless steel. As illustrated, the anode electrode contact 174 may extend through a bottom surface of the plating bath assembly 160 and may be connected to an electrical power supply (not shown), for example, through any suitable wiring conduit.
  • The substrate holding assembly 110, which is shown in perspective in FIG. 2 and in section in FIG. 3, generally includes an upper contact ring mounting member 112 attached to lower contact ring 114 via vertical attachment/support members 116. The mounting member 112 generally allows for attachment of the substrate holding assembly 110 to the head actuator assembly 102. The upper contact ring-mounting member 112 is generally configured to receive electrical power from the power supply (not shown) and conduct the electrical power through the support members 116 to the contact pins 310 in the lower portion 114 of the contact ring. The electrical power is generally conducted through the respective elements via an internal conductive portion (not shown) of the respective members. Alternatively, mounting member and support members 116 may be manufactured from a conductive material, and as such, the members themselves may be used to conduct the electrical power to the contact pins 310. However, in this embodiment the conductive surfaces of the respective members is generally coated or covered with an electrically insulating material, as exposed conductive surfaces will be plated on when the assembly is immersed in a plating solution. In one embodiment of the invention the conductive surfaces of the substrate holding assembly 110 are coated with a PTFE material, such as Aflon®, Viton®, or any other suitable plating-resistant coating material.
  • The lower contact ring portion 114 generally extends radially inward of the support members 116. Additionally, ring portion 114 generally includes the contact pins 310, either through an integrated manufacturing process or through an add on process. For example, FIG. 4 illustrates a plan view of an exemplary contact pin ring 400, wherein ring 400 is configured to be secured to the lower ring portion 114 to form contacts pins 310. The contact pin ring 400 generally includes an outer base portion 401 that has a plurality of flexible electrical contact elements 402 extending radially inward therefrom. The base portion 401 also generally includes a plurality of holes 403 formed therethrough, which allow for ring 400 to be bolted, brazed, or otherwise affixed to a lower surface of a contact ring assembly, such as assembly 110, for example.
  • Returning to FIG. 3, the substrate holding assembly 110 generally includes the upper member (not shown in FIG. 3), the support or middle member 116, and the ring member 114. A contact pin assembly, such as ring 400 illustrated in FIG. 4, is generally attached to the lower surface of ring 114 if the contact pins 310 are not integrally manufactured into ring member 114. The exemplary contact pin assembly illustrated in FIG. 3 includes a conductive core member 306, which may be manufactured from stainless steel, copper, gold, or other conductive material, that also has at least a minimal amount of flexibility at room temperatures or slightly below, e.g., at the temperature of an electrochemical plating solution in an ECP process. The conductive core 306 is generally coated with an electrically insulative layer 304 that is resistant to plating solutions, i.e., the coating does not react with plating solutions or facilitate plating on the coating. The insulating layer 304 is generally a Viton® or Aflon® layer, or a layer of another material that is both electrically insulative and resistant to electrochemical plating solutions, as well as being flexible and//or capable of bending without cracking, breaking, or otherwise allowing the plating solution to permeate through the coating to the underlying layer.
  • The contact pins 310 are generally positioned on the contact ring 114 in a configuration such that the contacts 310 contact the perimeter of a substrate positioned on the contact ring 114, e.g., the contact pins 310 are generally positioned in an annular pattern and extend radially inward, such that a perimeter of a substrate may be supported by the terminating ends/contact points 308 of the contact pins 308. The contact pins 310 may vary in number, for example, according to a size of the substrate being plated. Further, the contact pins 310 may be made of any suitable conductive material, such as copper (Cu), platinum (Pt), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag), stainless steel, indium, palladium and alloys thereof, or other conducting materials amenable to electrochemical plating processes. However, embodiments of the invention contemplate using only conductive materials that have a degree of flexibility (not completely rigid) at conventional plating temperatures, i.e., the temperature of a plating bath during an ECP process. Power may be supplied to the contacts 310 via a power supply (not shown). The power supply may supply electrical power to all of the electrical contacts 310 cooperatively, banks or groups of the electrical contacts 310, or to each of the contacts 310 individually. In embodiments where current is supplied to groups or individual contacts 310, a current control system may be employed to control the current applied to each group or bank of pins.
  • Contacts 310, which are generally shown in FIG. 3, are generally attached to a lower surface of the contact ring 114. However, embodiments of the invention are not limited to this configuration, as it is contemplated that the contacts 310 may be integrally formed into the contact ring 114, or alternatively, attached to the contact ring 114 in a different configuration. Each of the individual contact pins 310 includes an electrically conductive core 306. The conductive material used to manufacture the core 306 is generally selected to be both conductive and flexible, as the individual contact pins are configured to be flexible in at least one direction. More particularly, each of the contact pins 310 are generally configured to move horizontally, i.e., in the direction of arrow 311, in order to facilitate engagement of a substrate that is not completely planar. For example, if a substrate is not completely planar (or if the contact pins are not aligned in a horizontal plane), then a substrate that is positioned in the contact ring of the invention will engage some of the contact pins 310 and not others. Thus, each of the individual contact pins 310 are configured to be flexible so that this type of situation may be remedied via application of pressure to the backside of the substrate. This pressure causes the substrate to press against the contact pins 310 and slightly deflect the pins downward in the direction of arrow 311. This downward deflection causes the substrate to engage the remaining contact pins 310 that were not previously engaged. Thus, the flexibility of the contact pins 310 allows for optimal contact with the substrate, i.e., all of the contact pins 310 are caused to electrically engage the substrate.
  • The insulating layer 304 is formed onto the conductive surfaces of the upper ring member 112, the vertical support members 116, and the lower ring member 114 in order to simplify manufacturing processes and decrease cost. More particularly, in conventional contact ring applications a conductive core had to be formed into the insulative body of the contact ring, which is a costly and time consuming process. Embodiments of the invention solve this problem by manufacturing the contact ring components from conductive materials and then coating the conductive surfaces with the insulating layer 304. If desired, various insulating layers may be utilized, i.e., one insulating material (a rigid material, for example) may be used to coat the ring components 112, 114, and 116, and then another insulating layer (a flexible layer, for example) may be used to coat the contact pins 306.
  • In order to apply pressure to the substrate to cause pins 310 to flex, the thrust plate 140 discussed in FIG. 1 is generally utilized. More particularly, the thrust plate 140 is generally actuated in a vertical manner to physically engage the backside of the substrate being positioned in the contact ring 114 for plating. The thrust plate 140 pushes against the backside of the substrate to mechanically bias the substrate against the contacts 310, and during this process the pins 310 that are in engagement with high spots on the substrate or the pins that are positioned higher (vertically) than other pins 310 are caused to flex or bend downward. This downward motion allows for the remaining contact pins 310 to also engage the substrate, and as such, all of the contact pins 310 are brought into physical and electrical engagement with the substrate.
  • Additionally, thrust plate assembly 140 may also include seal means configured to prevent liquid from extending over the backside of the wafer. The seal means is desirable, as it operates to prevent backside fluid contact from occurring. This makes it easier to remove any backside deposition residue and helps to ensure that the robot blade gets a dry wafer to apply vacuum on. The seal member 302 is generally positioned on an upper portion of the thrust plate 140 and is configured to engage an upper portion of the contact ring 114 when the thrust plate 140 is extended and in contact with a substrate 122. The seal 302 generally includes a curved sealing surface 315 that is configured to engage a seal bump 317 formed on the upper surface of the contact ring 114. Both the sealing surface 315 and seal bump 317 are generally annularly shaped and of the same radius, so that the bump and surface meet contiguously when the thrust plate is extended. Generally, the seal 302 may operate to prevent plating solution from flowing over the outer perimeter of the contact ring 114 and to the backside of the substrate being plated. The sealing member 302 may be manufactured from materials such as nitrile, bunan, silicone, rubber, neoprene, polyurethane and teflon encapsulated elastomers. Additionally, seal 302 may be manufactured at least partially of a perfluoroelastomer material, such as perfluoroelastomer materials sold under the trade names Chemraz®, Kalrez®, Perlast®, Simriz®, and Viton®. Further, the insulative coating applied to the contacts 310 may be coated with the same material that the seal 302 may be manufactured from.
  • Sealing member 302 may include a body portion 352 attached to the thrust plate assembly 140 and an annular portion 315 extending from the base portion 352. As illustrated, the annular portion 315 may be substantially perpendicular to the body portion 352. The sealing member 302 may be adapted to engage the annular ring 118 formed on the top surface of the contact ring 114 with the annular portion 315. Particularly, an inner surface of the annular portion 315 may engage an outer surface of the annular bump/ring 317. Thus, the annular portion 315 may exert a radial sealing force (FRADIAL) directed radially inward, i.e., substantially parallel to the substrate 120.
  • The size and shape of sealing member 302 may be designed to ensure adequate radial force is generated to provide adequate sealing. For example, an outer diameter of the back side radial seal 302 (to an outer surface of the annular portion 315) may be chosen to be slightly larger (e.g., less than 5 mm) than an outer diameter of the bump 317. As the thrust plate 140 is lowered to secure the substrate 120, the annular portion 315 may flex radially outward to engage the annular bump 317, resulting in an adequate radial seal without excessive downward force. Further, as illustrated, an inner edge of the back side sealing member 302 where the annular portion 315 extends from the body portion 352 may be substantially rounded to mate with a substantially rounded top surface of the annular bump 317.
  • In another embodiment of the invention, each of the individual contacts 310 include conductive tip members affixed to the distal contact point of each of the contacts 310. The tip members are generally manufactured from copper (Cu), platinum (Pt), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag), stainless steel, indium, palladium, and/or alloys thereof. Using this configuration, the core portion 306 of the contact ring may be manufactured from a more cost effective material, while the portions of the contact ring that electrically engage the substrate surface, i.e., the distal ends 308 of contacts 310 may be manufactured from a material that has improved electrical contact characteristics over the core material. Although the core of the contact ring may be manufactured from the same material used to electrically contact the substrate, manufacturing the core from the contact/tip material will generally increase the cost of the contact ring substantially. Therefore, in order to maintain a cost effective contact ring, while also providing improved electrical contact characteristics between the contact ring and the substrate, embodiments of the present invention utilize a contact ring that includes a cost effective core portion that has a material that provides improved electrical contact characteristics brazed or otherwise affixed to the distal portions 308 of the contact fingers 310.
  • The contact ring of this embodiment may include a core that is manufactured from a standard steel, such as stainless steel, for example. The core provides a conductive medium through the main body of the contact ring and generally provides the supporting structure or backbone of the contact ring. However, since steel generally provides poor electrical contact characteristics with semiconductor substrates and reacts poorly with electrochemical plating solutions, the terminating end or contact point 308 of each of the contact fingers 310 may include a portion of another metal. For example, each of the tips 308 may have a slug of (Cu), platinum (Pt), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag), indium, palladium, and/or alloys thereof brazed thereto. The slug that is brazed to the contact tip 308 may be sized and shaped for optimal substrate contact.
  • Further, since the contact ring of the invention generally includes a plurality of contact fingers 402, as illustrated in FIG. 4, the process of brazing slugs to each of the contact tips 308 may generally include a single brazing operation that may then be separated into the plurality of fingers 402. For example, when the contact ring of the invention is manufactured, finger portions 402 may be manufactured last. In this process the outer ring 401 (base portion) may first be formed. The process of forming the outer ring 401 may further include forming an inner ring that may be subsequently used to form fingers 402, however, the inner ring is left as a solid at this point in the process. The cross section of the inner ring is generally manufactured to be the same cross section as the contact fingers 402 (including the contact tips that will be formed later). In this configuration a ring of material (tip ring) may be brazed to the annular contact tip portion of the inner ring before the finger portions 402 are formed. The tip ring portion, which is generally synonymous with the slug discussed above, may be formed of a material that provides optimal electrical contact characteristics with substrates, adheres well to the core material of the contact ring, and reacts favorably to electrochemical plating solutions. Exemplary ring materials include platinum, tantalum, titanium, indium, palladium, and alloys thereof.
  • Once the tip ring member has been brazed to the contact tip portion of the contact ring, then the contact finger portions 402 may be formed from the inner ring having the tip ring brazed thereto. This process may generally include cutting the spaces that are between fingers 402 from the inner ring. Thus, since the inner ring is generally a solid annular piece that has the tip ring brazed thereto, a plurality of cuts may be made into the inner ring to form the fingers. For example, cuts may be made close to each other, which leaves an extending portion of the ring remaining between the cuts. This extending portion may be configured to be the contact fingers 402 of the contact ring. Therefore, the desired width of the contact fingers may be determined by the spacing of the cuts of the inner ring. Further, since the tip ring portion is brazed to the inner ring, when the cuts are made, each individual finger is formed with a razed tip thereon, which would not be easily accomplished if each tip were to be brazed onto each finger individually.
  • While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (20)

1. A contact ring for supporting a substrate in an electrochemical plating chamber, comprising:
a conductive core comprises:
an outer base portion;
a plurality of contact pins extending radially inward from the outer base portion, wherein the plurality of contact pins are configured to support the substrate by a perimeter of the substrate; and
a plurality of contact tips, wherein each of the plurality of contact tips is connected with a corresponding one of the plurality of contact pins, and the plurality of contact tips are configured to contact the substrate while the plurality of contact pins are supporting the substrate; and
an insulating layer covering at least a portion of the conductive core.
2. The contact ring of claim 1, wherein the plurality of contact pins have sufficient flexibility at about room temperature so that every one of the plurality of contact tips on the plurality of contact pins is in contact with the substrate.
3. The contact ring of claim 2, wherein the plurality of contact pins are covered by a first portion of the insulating layer and the first portion of insulating layer covering the plurality of contact pins has sufficient flexibility at about room temperature so that the first portion of the insulating layer bends with the plurality of contact pins without cracking while the plurality of contact pins are supporting the substrate.
4. The contact ring of claim 3, wherein a second portion of the insulating layer covers the outer base portion, and wherein the second portion of the insulating layer is sufficiently rigid.
5. The contact ring of claim 1, wherein the outer base portion and the plurality of contact tips are made of a first conductive material and the plurality of contact tips are made of a second conductive material.
6. The contact ring of claim 3, wherein the first conductive material comprises stainless steel.
7. The contact ring of claim 3, wherein the second conductive material comprises at least one of platinum, tantalum, indium, palladium, and alloys thereof.
8. The contact ring of claim 1, wherein the plurality of conductive tips are brazed on the plurality of contact pins.
9. The contact ring of claim 1, wherein the contact ring is configured to be immersed in an electroplating bath in the electrochemical plating chamber.
10. A contact ring for supporting a substrate in an electrochemical plating chamber, comprising:
an electrically conductive ring;
a plurality of electrically conductive pins extending radially inward from the electrically conductive ring;
a plurality of electrically conductive tips, each of the plurality of electrically conductive tips is coupled with a corresponding one of the plurality of electrically conductive pins on a distal end of the corresponding conductive pin; and
a first insulating layer disposed on at least a portion of the plurality of electrically conductive pins,
wherein the plurality of electrically conductive pins are configured to support the substrate on the distal ends.
11. The contact ring of claim 10, further comprising a second insulating layer disposed on the electrically conductive ring, wherein the first insulating layer is relatively flexible and the second insulating layer is relatively rigid.
12. The contact ring of claim 10, wherein the plurality of electrically conductive pins have sufficient flexibility at about room temperature so that every one of the plurality of electrically conductive tips on the plurality of electrically conductive pins electrically engages the substrate.
13. The contact ring of claim 10, wherein the plurality of electrically conductive tips are brazed on the plurality of electrically conductive pins.
14. The contact ring of claim 10, wherein the plurality of electrically conductive tips are made from at least one of platinum, tantalum, indium, palladium, and alloys thereof.
15. A contact ring assembly for supporting a substrate in an electrochemical plating chamber, comprising:
an upper conductive ring member;
a lower conductive ring member secured to the upper conductive ring member, wherein the lower conductive ring member comprises:
an outer base portion;
a plurality of contact pins extending inwardly from the outer base portion, wherein the plurality of contact pins are configured to support the substrate near a perimeter; and
a plurality of contact tips configured to contact the substrate, each of the plurality of contact tips is coupled with one of the plurality of contact pins; and
an insulating layer covering at least a portion of the lower conductive ring member.
16. The contact ring assembly of claim 15, wherein the plurality of contact pins have sufficient flexibility at about room temperature so that every one of the plurality of contact tips on the plurality of contact pins is in contact with the substrate.
17. The contact ring assembly of claim 16, wherein the plurality of contact pins are covered by a first portion of the insulating layer and the first portion of insulating layer covering the plurality of contact pins has sufficient flexibility at about room temperature so that the first portion of the insulating layer bends with the plurality of contact pins without cracking.
18. The contact ring assembly of claim 15, wherein the lower conductive ring member is detachably secured to a lower surface of the upper conductive ring member.
19. The contact ring assembly of claim 15, wherein the lower conductive ring member is configured to be immerged in a plating solution in the electrochemical plating chamber.
20. The contact ring assembly of claim 15, wherein the plurality of conductive tips are brazed on the plurality of contact pins.
US11/475,584 2003-01-31 2006-06-27 Contact ring with embedded flexible contacts Abandoned US20060237308A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/475,584 US20060237308A1 (en) 2003-01-31 2006-06-27 Contact ring with embedded flexible contacts

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/355,479 US7087144B2 (en) 2003-01-31 2003-01-31 Contact ring with embedded flexible contacts
US11/475,584 US20060237308A1 (en) 2003-01-31 2006-06-27 Contact ring with embedded flexible contacts

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/355,479 Continuation US7087144B2 (en) 2003-01-31 2003-01-31 Contact ring with embedded flexible contacts

Publications (1)

Publication Number Publication Date
US20060237308A1 true US20060237308A1 (en) 2006-10-26

Family

ID=32770545

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/355,479 Expired - Fee Related US7087144B2 (en) 2003-01-31 2003-01-31 Contact ring with embedded flexible contacts
US11/475,584 Abandoned US20060237308A1 (en) 2003-01-31 2006-06-27 Contact ring with embedded flexible contacts

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US10/355,479 Expired - Fee Related US7087144B2 (en) 2003-01-31 2003-01-31 Contact ring with embedded flexible contacts

Country Status (4)

Country Link
US (2) US7087144B2 (en)
KR (1) KR200349916Y1 (en)
CN (1) CN2767460Y (en)
TW (1) TWM261511U (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120181170A1 (en) * 2008-12-10 2012-07-19 Vinay Prabhakar Wafer electroplating apparatus for reducing edge defects
US9221081B1 (en) 2011-08-01 2015-12-29 Novellus Systems, Inc. Automated cleaning of wafer plating assembly
US9228270B2 (en) 2011-08-15 2016-01-05 Novellus Systems, Inc. Lipseals and contact elements for semiconductor electroplating apparatuses
US9476139B2 (en) 2012-03-30 2016-10-25 Novellus Systems, Inc. Cleaning electroplating substrate holders using reverse current deplating
US9512538B2 (en) 2008-12-10 2016-12-06 Novellus Systems, Inc. Plating cup with contoured cup bottom
US9746427B2 (en) 2013-02-15 2017-08-29 Novellus Systems, Inc. Detection of plating on wafer holding apparatus
US9988734B2 (en) 2011-08-15 2018-06-05 Lam Research Corporation Lipseals and contact elements for semiconductor electroplating apparatuses
US10053793B2 (en) 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
US10066311B2 (en) 2011-08-15 2018-09-04 Lam Research Corporation Multi-contact lipseals and associated electroplating methods
US10092933B2 (en) 2012-03-28 2018-10-09 Novellus Systems, Inc. Methods and apparatuses for cleaning electroplating substrate holders
US10113245B2 (en) 2016-03-24 2018-10-30 Applied Materials, Inc. Electroplating contact ring with radially offset contact fingers
US10416092B2 (en) 2013-02-15 2019-09-17 Lam Research Corporation Remote detection of plating on wafer holding apparatus

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0991795B1 (en) 1998-04-21 2006-02-22 Applied Materials, Inc. Electro-chemical deposition system and method of electroplating on substrates
US20050145499A1 (en) * 2000-06-05 2005-07-07 Applied Materials, Inc. Plating of a thin metal seed layer
FR2842536B1 (en) * 2002-07-19 2005-06-03 Commissariat Energie Atomique ELECTROLYTIC REACTOR
US20040134775A1 (en) * 2002-07-24 2004-07-15 Applied Materials, Inc. Electrochemical processing cell
US7223323B2 (en) * 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
US7128823B2 (en) * 2002-07-24 2006-10-31 Applied Materials, Inc. Anolyte for copper plating
US7252750B2 (en) * 2003-09-16 2007-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Dual contact ring and method for metal ECP process
US7985325B2 (en) 2007-10-30 2011-07-26 Novellus Systems, Inc. Closed contact electroplating cup assembly
US7935231B2 (en) * 2007-10-31 2011-05-03 Novellus Systems, Inc. Rapidly cleanable electroplating cup assembly
US9309603B2 (en) * 2011-09-14 2016-04-12 Applied Materials, Inc Component cleaning in a metal plating apparatus
US8900425B2 (en) * 2011-11-29 2014-12-02 Applied Materials, Inc. Contact ring for an electrochemical processor
US8968531B2 (en) 2011-12-07 2015-03-03 Applied Materials, Inc. Electro processor with shielded contact ring
US20130306465A1 (en) * 2012-05-17 2013-11-21 Applied Materials, Inc. Seal rings in electrochemical processors
EP2799939A1 (en) * 2013-04-30 2014-11-05 Universo S.A. Support for the treatment of micromechanical parts
JP6745103B2 (en) * 2014-11-26 2020-08-26 ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated Lip seals and contact elements for semiconductor electroplating equipment
JP1546800S (en) * 2015-06-12 2016-03-28
US10174437B2 (en) * 2015-07-09 2019-01-08 Applied Materials, Inc. Wafer electroplating chuck assembly
USD797691S1 (en) * 2016-04-14 2017-09-19 Applied Materials, Inc. Composite edge ring
CN107761156B (en) * 2016-08-22 2021-05-14 盛美半导体设备(上海)股份有限公司 Electroplating bath
JP6963524B2 (en) * 2018-03-20 2021-11-10 キオクシア株式会社 Electroplating equipment
CN110835777B (en) * 2019-11-22 2020-12-08 温州炘都工业设计有限公司 Sand feeding device for diamond gear machining
JP7242516B2 (en) * 2019-12-13 2023-03-20 株式会社荏原製作所 substrate holder

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251236B1 (en) * 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
US6258220B1 (en) * 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6398926B1 (en) * 2000-05-31 2002-06-04 Techpoint Pacific Singapore Pte Ltd. Electroplating apparatus and method of using the same
US6540899B2 (en) * 2001-04-05 2003-04-01 All Wet Technologies, Inc. Method of and apparatus for fluid sealing, while electrically contacting, wet-processed workpieces

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649509A (en) 1969-07-08 1972-03-14 Buckbee Mears Co Electrodeposition systems
US3727620A (en) 1970-03-18 1973-04-17 Fluoroware Of California Inc Rinsing and drying device
US3770598A (en) 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US4027686A (en) 1973-01-02 1977-06-07 Texas Instruments Incorporated Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
BE833384A (en) 1975-03-11 1976-03-12 COPPER ELECTRODEPOSITION
JPS5271871A (en) 1975-12-11 1977-06-15 Nec Corp Washing apparatus
JPS5819350B2 (en) 1976-04-08 1983-04-18 富士写真フイルム株式会社 Spin coating method
US4326940A (en) 1979-05-21 1982-04-27 Rohco Incorporated Automatic analyzer and control system for electroplating baths
US4315059A (en) 1980-07-18 1982-02-09 The United States Of America As Represented By The United States Department Of Energy Molten salt lithium cells
US4405416A (en) 1980-07-18 1983-09-20 Raistrick Ian D Molten salt lithium cells
US4304641A (en) 1980-11-24 1981-12-08 International Business Machines Corporation Rotary electroplating cell with controlled current distribution
US4336114A (en) 1981-03-26 1982-06-22 Hooker Chemicals & Plastics Corp. Electrodeposition of bright copper
US4376685A (en) 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
DE3272891D1 (en) 1981-10-01 1986-10-02 Emi Ltd Electroplating arrangements
JPS58182823A (en) 1982-04-21 1983-10-25 Nec Corp Plating apparatus for semiconductor wafer
US4489740A (en) 1982-12-27 1984-12-25 General Signal Corporation Disc cleaning machine
US4428815A (en) 1983-04-28 1984-01-31 Western Electric Co., Inc. Vacuum-type article holder and methods of supportively retaining articles
US4789445A (en) 1983-05-16 1988-12-06 Asarco Incorporated Method for the electrodeposition of metals
US4510176A (en) 1983-09-26 1985-04-09 At&T Bell Laboratories Removal of coating from periphery of a semiconductor wafer
US4518678A (en) 1983-12-16 1985-05-21 Advanced Micro Devices, Inc. Selective removal of coating material on a coated substrate
US4519846A (en) 1984-03-08 1985-05-28 Seiichiro Aigo Process for washing and drying a semiconductor element
US4693805A (en) 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
US4732785A (en) 1986-09-26 1988-03-22 Motorola, Inc. Edge bead removal process for spin on films
JPS63118093A (en) 1986-11-05 1988-05-23 Tanaka Electron Ind Co Ltd Method for tinning electronic parts
US5230743A (en) 1988-05-25 1993-07-27 Semitool, Inc. Method for single wafer processing in which a semiconductor wafer is contacted with a fluid
US5235995A (en) 1989-03-27 1993-08-17 Semitool, Inc. Semiconductor processor apparatus with dynamic wafer vapor treatment and particulate volatilization
US5224504A (en) 1988-05-25 1993-07-06 Semitool, Inc. Single wafer processor
US5092975A (en) 1988-06-14 1992-03-03 Yamaha Corporation Metal plating apparatus
US5316974A (en) 1988-12-19 1994-05-31 Texas Instruments Incorporated Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer
US5039381A (en) 1989-05-25 1991-08-13 Mullarkey Edward J Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like
US5162260A (en) 1989-06-01 1992-11-10 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US5055425A (en) 1989-06-01 1991-10-08 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US5155336A (en) 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US5222310A (en) 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
US5259407A (en) 1990-06-15 1993-11-09 Matrix Inc. Surface treatment method and apparatus for a semiconductor wafer
US5252807A (en) 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5368711A (en) 1990-08-01 1994-11-29 Poris; Jaime Selective metal electrodeposition process and apparatus
US5256274A (en) 1990-08-01 1993-10-26 Jaime Poris Selective metal electrodeposition process
CA2059841A1 (en) 1991-01-24 1992-07-25 Ichiro Hayashida Surface treating solutions and cleaning method
JP3200468B2 (en) 1992-05-21 2001-08-20 日本エレクトロプレイテイング・エンジニヤース株式会社 Wafer plating equipment
JP2654314B2 (en) 1992-06-04 1997-09-17 東京応化工業株式会社 Backside cleaning device
US5281325A (en) 1992-07-02 1994-01-25 Berg N Edward Uniform electroplating of printed circuit boards
JPH0617291A (en) 1992-07-03 1994-01-25 Nec Corp Metal plating device
US6251050B1 (en) * 1992-11-02 2001-06-26 Gary L. Johnston Standup exercise apparatus
US5328589A (en) 1992-12-23 1994-07-12 Enthone-Omi, Inc. Functional fluid additives for acid copper electroplating baths
US5718813A (en) 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
US5608943A (en) 1993-08-23 1997-03-11 Tokyo Electron Limited Apparatus for removing process liquid
US5625170A (en) 1994-01-18 1997-04-29 Nanometrics Incorporated Precision weighing to monitor the thickness and uniformity of deposited or etched thin film
JP3377849B2 (en) 1994-02-02 2003-02-17 日本エレクトロプレイテイング・エンジニヤース株式会社 Wafer plating equipment
US5651865A (en) 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
US5705223A (en) 1994-07-26 1998-01-06 International Business Machine Corp. Method and apparatus for coating a semiconductor wafer
US5516412A (en) 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US5807469A (en) 1995-09-27 1998-09-15 Intel Corporation Flexible continuous cathode contact circuit for electrolytic plating of C4, tab microbumps, and ultra large scale interconnects
US5980706A (en) 1996-07-15 1999-11-09 Semitool, Inc. Electrode semiconductor workpiece holder
US6004828A (en) 1997-09-30 1999-12-21 Semitool, Inc, Semiconductor processing workpiece support with sensory subsystem for detection of wafers or other semiconductor workpieces
US6358388B1 (en) 1996-07-15 2002-03-19 Semitool, Inc. Plating system workpiece support having workpiece-engaging electrodes with distal contact-part and dielectric cover
US6001234A (en) 1997-09-30 1999-12-14 Semitool, Inc. Methods for plating semiconductor workpieces using a workpiece-engaging electrode assembly with sealing boot
US6004440A (en) 1997-09-18 1999-12-21 Semitool, Inc. Cathode current control system for a wafer electroplating apparatus
WO1999016936A1 (en) 1997-09-30 1999-04-08 Semitool, Inc. Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations
US6090711A (en) 1997-09-30 2000-07-18 Semitool, Inc. Methods for controlling semiconductor workpiece surface exposure to processing liquids
US6274010B1 (en) 1997-10-07 2001-08-14 Process Automation International Limited Electroplating apparatus
US6179983B1 (en) 1997-11-13 2001-01-30 Novellus Systems, Inc. Method and apparatus for treating surface including virtual anode
US6027631A (en) 1997-11-13 2000-02-22 Novellus Systems, Inc. Electroplating system with shields for varying thickness profile of deposited layer
US6156167A (en) 1997-11-13 2000-12-05 Novellus Systems, Inc. Clamshell apparatus for electrochemically treating semiconductor wafers
US6126798A (en) 1997-11-13 2000-10-03 Novellus Systems, Inc. Electroplating anode including membrane partition system and method of preventing passivation of same
US6159354A (en) 1997-11-13 2000-12-12 Novellus Systems, Inc. Electric potential shaping method for electroplating
US6080291A (en) 1998-07-10 2000-06-27 Semitool, Inc. Apparatus for electrochemically processing a workpiece including an electrical contact assembly having a seal member
CN1244722C (en) 1998-07-10 2006-03-08 塞米用具公司 Method and apparatus for copper plating using electroless plating and electroplating
US6176992B1 (en) 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6514258B1 (en) 1998-11-04 2003-02-04 Implant Innovations, Inc. Penetration limiting stop elements for a drill bit used for bone tissue
US6328872B1 (en) 1999-04-03 2001-12-11 Nutool, Inc. Method and apparatus for plating and polishing a semiconductor substrate
US6468139B1 (en) 1998-12-01 2002-10-22 Nutool, Inc. Polishing apparatus and method with a refreshing polishing belt and loadable housing
US6534116B2 (en) 2000-08-10 2003-03-18 Nutool, Inc. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
US6497800B1 (en) 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
US6413388B1 (en) 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US6409904B1 (en) 1998-12-01 2002-06-25 Nutool, Inc. Method and apparatus for depositing and controlling the texture of a thin film
US6103628A (en) 1998-12-01 2000-08-15 Nutool, Inc. Reverse linear polisher with loadable housing
US6464571B2 (en) 1998-12-01 2002-10-15 Nutool, Inc. Polishing apparatus and method with belt drive system adapted to extend the lifetime of a refreshing polishing belt provided therein
US6251235B1 (en) 1999-03-30 2001-06-26 Nutool, Inc. Apparatus for forming an electrical contact with a semiconductor substrate
US6103085A (en) 1998-12-04 2000-08-15 Advanced Micro Devices, Inc. Electroplating uniformity by diffuser design
US6271433B1 (en) 1999-02-22 2001-08-07 Stone & Webster Engineering Corp. Cat cracker gas plant process for increased olefins recovery
US6251250B1 (en) 1999-09-03 2001-06-26 Arthur Keigler Method of and apparatus for controlling fluid flow and electric fields involved in the electroplating of substantially flat workpieces and the like and more generally controlling fluid flow in the processing of other work piece surfaces as well
US6355153B1 (en) 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6352623B1 (en) 1999-12-17 2002-03-05 Nutool, Inc. Vertically configured chamber used for multiple processes
JP2001234395A (en) * 2000-02-28 2001-08-31 Tokyo Electron Ltd Wafer plating device
US6482307B2 (en) 2000-05-12 2002-11-19 Nutool, Inc. Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
US6527920B1 (en) 2000-05-10 2003-03-04 Novellus Systems, Inc. Copper electroplating apparatus
US6478936B1 (en) 2000-05-11 2002-11-12 Nutool Inc. Anode assembly for plating and planarizing a conductive layer
US7067045B2 (en) * 2002-10-18 2006-06-27 Applied Materials, Inc. Method and apparatus for sealing electrical contacts during an electrochemical deposition process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251236B1 (en) * 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
US6258220B1 (en) * 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6398926B1 (en) * 2000-05-31 2002-06-04 Techpoint Pacific Singapore Pte Ltd. Electroplating apparatus and method of using the same
US6540899B2 (en) * 2001-04-05 2003-04-01 All Wet Technologies, Inc. Method of and apparatus for fluid sealing, while electrically contacting, wet-processed workpieces

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9512538B2 (en) 2008-12-10 2016-12-06 Novellus Systems, Inc. Plating cup with contoured cup bottom
US20120181170A1 (en) * 2008-12-10 2012-07-19 Vinay Prabhakar Wafer electroplating apparatus for reducing edge defects
US9221081B1 (en) 2011-08-01 2015-12-29 Novellus Systems, Inc. Automated cleaning of wafer plating assembly
US10087545B2 (en) 2011-08-01 2018-10-02 Novellus Systems, Inc. Automated cleaning of wafer plating assembly
US10066311B2 (en) 2011-08-15 2018-09-04 Lam Research Corporation Multi-contact lipseals and associated electroplating methods
US9988734B2 (en) 2011-08-15 2018-06-05 Lam Research Corporation Lipseals and contact elements for semiconductor electroplating apparatuses
US9228270B2 (en) 2011-08-15 2016-01-05 Novellus Systems, Inc. Lipseals and contact elements for semiconductor electroplating apparatuses
US11512408B2 (en) 2011-08-15 2022-11-29 Novellus Systems, Inc. Lipseals and contact elements for semiconductor electroplating apparatuses
US10435807B2 (en) 2011-08-15 2019-10-08 Novellus Systems, Inc. Lipseals and contact elements for semiconductor electroplating apparatuses
US10053792B2 (en) 2011-09-12 2018-08-21 Novellus Systems, Inc. Plating cup with contoured cup bottom
US10092933B2 (en) 2012-03-28 2018-10-09 Novellus Systems, Inc. Methods and apparatuses for cleaning electroplating substrate holders
US9476139B2 (en) 2012-03-30 2016-10-25 Novellus Systems, Inc. Cleaning electroplating substrate holders using reverse current deplating
US10538855B2 (en) 2012-03-30 2020-01-21 Novellus Systems, Inc. Cleaning electroplating substrate holders using reverse current deplating
US9746427B2 (en) 2013-02-15 2017-08-29 Novellus Systems, Inc. Detection of plating on wafer holding apparatus
US10416092B2 (en) 2013-02-15 2019-09-17 Lam Research Corporation Remote detection of plating on wafer holding apparatus
US10053793B2 (en) 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
US10982346B2 (en) 2015-07-09 2021-04-20 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
US10113245B2 (en) 2016-03-24 2018-10-30 Applied Materials, Inc. Electroplating contact ring with radially offset contact fingers

Also Published As

Publication number Publication date
TWM261511U (en) 2005-04-11
US7087144B2 (en) 2006-08-08
KR200349916Y1 (en) 2004-05-12
US20040149573A1 (en) 2004-08-05
CN2767460Y (en) 2006-03-29

Similar Documents

Publication Publication Date Title
US7087144B2 (en) Contact ring with embedded flexible contacts
US6911127B2 (en) Contact assemblies, methods for making contact assemblies, and plating machines with contact assemblies for plating microelectronic workpieces
US7025862B2 (en) Plating uniformity control by contact ring shaping
US6773560B2 (en) Dry contact assemblies and plating machines with dry contact assemblies for plating microelectronic workpieces
US6251236B1 (en) Cathode contact ring for electrochemical deposition
US7138039B2 (en) Liquid isolation of contact rings
US6071388A (en) Electroplating workpiece fixture having liquid gap spacer
US6228231B1 (en) Electroplating workpiece fixture having liquid gap spacer
JP4766579B2 (en) Electrochemical deposition equipment
US6610190B2 (en) Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate
US7067045B2 (en) Method and apparatus for sealing electrical contacts during an electrochemical deposition process
JP2004524436A (en) Flow diffuser used in electrochemical plating system
JPH10284533A (en) Method for producing chip size semiconductor package
US20050218000A1 (en) Conditioning of contact leads for metal plating systems
US6802947B2 (en) Apparatus and method for electro chemical plating using backside electrical contacts
US20020029962A1 (en) Conductive biasing member for metal layering
US6939448B2 (en) Contact assemblies, methods for making contact assemblies, and plating machines with contact assemblies for plating microelectronic workpieces
US20060000708A1 (en) Noble metal contacts for plating applications
US20030019741A1 (en) Method and apparatus for sealing a substrate surface during an electrochemical deposition process
US6638840B1 (en) Electrode for electroplating planar structures
US20030201170A1 (en) Apparatus and method for electropolishing a substrate in an electroplating cell
US20050092614A1 (en) Distributing forces for electrodeposition

Legal Events

Date Code Title Description
AS Assignment

Owner name: APPLIED MATERIALS, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HERCHEN, HARALD;REEL/FRAME:018021/0794

Effective date: 20030131

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION