US20050284509A1 - Ultrasonic cleaning apparatus - Google Patents

Ultrasonic cleaning apparatus Download PDF

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Publication number
US20050284509A1
US20050284509A1 US11/159,199 US15919905A US2005284509A1 US 20050284509 A1 US20050284509 A1 US 20050284509A1 US 15919905 A US15919905 A US 15919905A US 2005284509 A1 US2005284509 A1 US 2005284509A1
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US
United States
Prior art keywords
ultrasonic
ultrasonic wave
transmission member
wave transmission
cleaning apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/159,199
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English (en)
Inventor
Naoaki Sakurai
Hiroshi Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Assigned to KABUSHIKI KAISHA TOSHIBA reassignment KABUSHIKI KAISHA TOSHIBA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FUJITA, HIROSHI, SAKURAI, NAOAKI
Publication of US20050284509A1 publication Critical patent/US20050284509A1/en
Priority to US11/870,272 priority Critical patent/US20080029132A1/en
Priority to US12/248,514 priority patent/US7814919B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Definitions

  • the present invention relates to an ultrasonic cleaning apparatus for cleaning materials such as a semiconductor substrate and glass substrate at a surface by using ultrasonic waves.
  • a process of manufacturing substrates such as semiconductor substrate and glass substrate includes a cleaning step of eliminating particles adhering to the surface of a substrate.
  • an ultrasonic cleaning apparatus is used, which eliminates particles adhering to the surface of the substrate by applying an ultrasonic wave to a cleaning liquid.
  • a nozzle type and a slit type are known as an ultrasonic cleaning apparatus.
  • a nozzle type ultrasonic cleaning apparatus cleans a material at a surface while rotating the material on a rotary table, and has a cylindrical cleaning head provided substantially vertical in the upper surface side of the material.
  • a slit type ultrasonic cleaning apparatus cleans a material at a surface while conveying the material by a conveying unit such as rollers, and has a bar-shaped cleaning head provided horizontally in the upper surface side of the material, so as to cross the material conveying direction.
  • These cleaning heads has a liquid chamber inside to store a cleaning liquid, a nozzle or slit on the lower surface to eject the cleaning liquid, and an ultrasonic transducer outside the upper surface to apply an ultrasonic wave to the cleaning liquid in the cleaning chamber.
  • the ultrasonic cleaning apparatus configured as above has an ultrasonic transducer on the upper surface of the cleaning head, and it is necessary to keep the liquid chamber filled with a cleaning liquid to apply an ultrasonic wave generated by the ultrasonic transducer to the cleaning liquid. Further, it is necessary to keep the liquid chamber filled with a cleaning liquid to prevent deterioration of the ultrasonic transducer by heat.
  • the ultrasonic cleaning apparatus supplies a cleaning liquid to an upper surface of a material to be cleaned, and applies an ultrasonic wave to the cleaning liquid on the upper surface of the material.
  • the ultrasonic cleaning apparatus has a cylindrical ultrasonic wave application head.
  • the ultrasonic wave application head is provided substantially vertical to the upper surface of the material, and has an ultrasonic lens as a diffusion application means at the lower end, an ultrasonic transducer to generate an ultrasonic wave inside, and a nozzle to supply a cleaning liquid to the upper surface of a material outside.
  • the ultrasonic lens transmits the ultrasonic wave generated by the ultrasonic transducer to the cleaning liquid on the upper surface of the material, and has inside a path to flow a cooling liquid to cool the ultrasonic transducer.
  • the lower surface of the ultrasonic lens is curved to swell toward the upper surface of the material to diffuse and apply the ultrasonic wave generated by the ultrasonic transducer to a wide area of the cleaning liquid.
  • ultrasonic wave is applied directly from the ultrasonic lens to the cleaning liquid supplied to the surface of the material. Therefore, the material can be cleaned with the least minimum cleaning liquid, and the amount of the cleaning liquid with which the material is cleaned can be decreased. Further, the ultrasonic transducer can be cooled by flowing a cooling liquid in the path provided in the ultrasonic lens.
  • One end of the ultrasonic lens is expanded in the diameter, and the expanded end face has a block made of material with high thermal conductivity such as copper.
  • a path to flow a cooling liquid is formed inside the block, and an ultrasonic transducer is provided on the outside surface of the block.
  • an ultrasonic wave generated by the ultrasonic transducer is transmitted to the ultrasonic lens through the block, and vibrates the ultrasonic lens laterally or in the direction crossing the axial line. This lateral vibration is transmitted to the cleaning liquid between the ultrasonic lens and the material, and used to clean the material at an upper surface.
  • an ultrasonic wave generated by an ultrasonic transducer may reflect at an upper surface of a material to be cleaned and enter an ultrasonic transducer through an ultrasonic lens.
  • the ultrasonic transducer When an ultrasonic wave enters an ultrasonic transducer, the ultrasonic transducer is extremely heated exceeding the cooling effect of a cooling liquid then, the polarization of the ultrasonic transducer may be deteriorated. In this case, the ultrasonic transducer cannot generate an ultrasonic wave with a constant intensity, and decreases the cleaning efficiency.
  • the ultrasonic wave generated by the ultrasonic transducer is applied to the cleaning liquid after converting to vibration in the lateral direction of the ultrasonic lens, and the intensity of the ultrasonic wave applied to the cleaning liquid is decreased. Further, since the vibration in the lateral direction of the ultrasonic lens advances radially around the axial line of the ultrasonic lens, or toward all directions of the radius of the ultrasonic lens, the ultrasonic vibration toward the upper side where no cleaning liquid exists is not effectively used for cleaning the material.
  • an ultrasonic cleaning apparatus comprising an ultrasonic wave application head which cleans a material at a surface by applying an ultrasonic wave to a cleaning liquid supplied to the surface of the material.
  • the ultrasonic wave application head has an ultrasonic wave transmission member which is placed opposite to the surface and has a curved portion on a first plane placed close to the surface; an ultrasonic transducer which is provided on a second plane opposite to the first plane of the ultrasonic transmission member, and generates and applies an ultrasonic wave to a cleaning liquid on the surface through the ultrasonic wave transmission member; and a preventive portion which is provided in the ultrasonic wave transmission member, and prevents the ultrasonic wave applied to the cleaning liquid and reflected on the surface from entering the ultrasonic transducer through the ultrasonic wave transmission member.
  • an ultrasonic cleaning apparatus comprising an ultrasonic wave application head which cleans a material at a surface by applying an ultrasonic wave to a cleaning liquid supplied to the surface of the material.
  • the ultrasonic wave application head has an ultrasonic wave transmission member which is placed opposite to the surface and has a curved portion on a first plane placed close to the surface; an ultrasonic transducer which is provided on a second plane opposite to the first plane of the ultrasonic transmission member, and generates and applies an ultrasonic wave to the liquid on the surface through the first plane of the ultrasonic wave transmission member; and a preventive portion which is provided in the ultrasonic wave transmission member, and prevents the ultrasonic wave generated by the ultrasonic transducer from exiting to the cleaning liquid on the surface at a substantially right angle to the surface.
  • an ultrasonic cleaning apparatus comprising an ultrasonic wave application head which cleans a material at a surface by applying an ultrasonic wave to a cleaning liquid supplied to the surface of the material.
  • the ultrasonic wave application head has a cylindrical ultrasonic wave transmission member with a first plane faced to the surface, and an ultrasonic transducer which is provided on a second plane opposite to the first plane of the ultrasonic wave transmission member, and applies an ultrasonic wave to the cleaning liquid on the surface through the ultrasonic wave transmission member, wherein a portion of the first plane of the ultrasonic wave transmission member closest to the surface is circular surrounding the axial line of the ultrasonic wave transmission member.
  • an ultrasonic cleaning apparatus comprising an ultrasonic wave application head which cleans a material at a surface by applying an ultrasonic wave to a cleaning liquid supplied to the surface of the material.
  • the ultrasonic wave application head has a bar-shaped ultrasonic wave transmission member which is placed with an axial line parallel to the surface and a first plane faced to the surface; and an ultrasonic transducer which is provided on a second plane opposite to the first plane of the ultrasonic transmission member, and generates and applies an ultrasonic wave to a cleaning liquid on the surface through the ultrasonic wave transmission member, wherein a portion of the first plane of the ultrasonic wave transmission member closest to the surface is formed as two linear lines which are located on both sides of a axial line of the ultrasonic wave transmission member respectively.
  • FIG. 1 is a view showing the configuration of an ultrasonic cleaning apparatus according to a first embodiment of the present invention
  • FIG. 2 is a view showing the configuration of an ultrasonic wave application head according to the embodiment
  • FIG. 3A is a graph showing the intensity distribution of an ultrasonic wave measured under an ultrasonic lens with a notch according to the embodiment
  • FIG. 3B is a graph showing the intensity distribution of an ultrasonic wave measured under an ultrasonic lens without a notch according to the embodiment
  • FIG. 4A is gradation showing the intensity distribution of an ultrasonic wave measured under an ultrasonic lens with a notch according to the embodiment
  • FIG. 4B is gradation showing the intensity distribution of an ultrasonic wave measured under an ultrasonic lens without a notch according to the embodiment
  • FIG. 5 is a graph showing the temperatures of an ultrasonic transducer according to the embodiment measured by supplying power continuously to the ultrasonic transducer;
  • FIG. 6 is a graph showing the temperatures of an ultrasonic transducer according to the embodiment measured by supplying power intermittently to the ultrasonic transducer;
  • FIG. 7 is a graph showing the voltage standing wave ratio VSWR when power is continuously supplied to the ultrasonic transducer according to the embodiment.
  • FIG. 8 is a view showing the configuration of an ultrasonic wave application head according to a modification of the embodiment.
  • FIG. 9 is a perspective view of an ultrasonic cleaning apparatus according to a second embodiment of the present invention.
  • FIG. 10 is a perspective view of an ultrasonic lens according to a modification of the embodiment.
  • FIG. 1 - FIG. 8 A first embodiment of the present invention will be explained first with reference to FIG. 1 - FIG. 8 .
  • FIG. 1 is a view showing the configuration of an ultrasonic cleaning apparatus according to a first embodiment of the present invention.
  • the ultrasonic cleaning apparatus comprises a spin processing unit 10 which holds and rotates a material S such as a semiconductor substrate and glass substrate, and an ultrasonic cleaning unit 20 which supplies a cleaning liquid L to the material S, applies an ultrasonic wave to the cleaning liquid L, and cleans the surface of the material S.
  • a spin processing unit 10 which holds and rotates a material S such as a semiconductor substrate and glass substrate
  • an ultrasonic cleaning unit 20 which supplies a cleaning liquid L to the material S, applies an ultrasonic wave to the cleaning liquid L, and cleans the surface of the material S.
  • the spin processing unit 10 has a cylindrical cup body 11 with a bottom.
  • the cup body 11 has an opening 11 a facing upward, and has ejection ports 12 on the bottom 11 b to eject the cleaning liquid L after the cleaning step.
  • a motor 13 is provided under the cup body 11 .
  • a driving shaft 13 a of the motor 13 penetrates the bottom wall of the cup body 11 , and the mid portion of the shaft 13 a is rotatably held by a bearing 14 .
  • a rotary table 15 is provided almost horizontally at the upper end of the driving shaft 13 a .
  • Support pins 16 are provided with equal intervals on the upper surface periphery of the rotary table 15 .
  • the support pins 16 engage with the periphery of the material S, and support the material S substantially horizontally.
  • the ultrasonic cleaning unit 20 has an ultrasonic wave application head 21 .
  • the ultrasonic wave application head 21 is placed opposite to the surface of the material S, and can reciprocate on the surface by driving a swing arm 22 .
  • FIG. 2 is a view showing the configuration of the ultrasonic wave application head 21 according to the embodiment.
  • the ultrasonic wave application head 21 has a head main body 21 a .
  • the head main body 21 a is formed like a flat plate, and has an opening 21 b faced to the surface of the material S.
  • a cylindrical ultrasonic lens 23 (ultrasonic transmission member) is provided inside the head main body 21 a .
  • the ultrasonic lens 23 is made of SiO2, for example.
  • the lower end of the ultrasonic lens 23 projects from the opening 21 b of the head main body 21 a to the surface of the material S.
  • the lower end face 23 a (first plane) opposite to the surface of the material S is composed of a curved portion projecting to the surface as it comes close to the radial center.
  • the vertical thickness of the ultrasonic lens 23 is set to have the highest intensity of an ultrasonic wave generated by an ultrasonic transducer 25 (described later) in the ring-like area around an axial line I of the ultrasonic lens 23 when the intensity is measured under the ultrasonic lens 23 .
  • a notch 24 (preventive portion) is formed at the radial center of the lower end face 23 a of the ultrasonic lens 23 .
  • the notch 24 is formed by oblique planes 24 b inclined to the axial line I of the ultrasonic lens 23 , and formed conical with the diameter becoming small as it goes upward in this embodiment.
  • the circular area around the axial line I of the lower end face 23 a of the ultra-sonic lens 23 becomes closest to the material S.
  • the ultrasonic transducer 25 is fixed with adhesive to the upper end face 23 c (second surface) of the ultrasonic lens 23 .
  • the ultrasonic transducer 25 is made of lead titanate, for example, and generates an ultrasonic wave by receiving power from a power supply unit 27 .
  • the ultrasonic transducer 25 may also be made of piezoelectric element.
  • a matching circuit 28 is provided between the power supply unit 27 and ultrasonic transducer 25 .
  • the matching circuit 28 matches the impedance between the power supply unit 27 and ultrasonic transducer 25 , and is previously adjusted to convert the power from the power supply unit 27 most effectively into an ultra-sonic wave in the ultrasonic transducer 25 .
  • a nozzle body 26 is provided in the periphery of the head main body 21 a .
  • the distal end of the nozzle body 26 is faced to between the lower end face 23 a of the ultrasonic lens 23 and the surface of the material S, so that it can supply the cleaning liquid L such as hydrofluoric acid to the surface of the material S.
  • a cooling tube (not shown) is provided around the ultrasonic lens 23 .
  • the cooling tube flows a cooling liquid supplied from a cooling liquid source (not shown), and can cool the ultrasonic transducer 25 heated by generating an ultrasonic wave.
  • the material S When the material S is supported by the support pins 16 on the rotary table 15 , the material S is rotated in the circumferential direction by the rotary table 15 and the cleaning liquid L is supplied from the nozzle body 26 to the surface of the material S.
  • the ultrasonic transducer 25 When the cleaning liquid L is filled between the ultrasonic lens 23 and the surface of the material S, the ultrasonic transducer 25 is driven and an ultra->sonic wave is applied from the ultrasonic lens 23 to the cleaning liquid L on the surface of the material S.
  • the ultrasonic wave is difficult to reach the cleaning liquid L near the radial center of the ultrasonic lens 23 .
  • the intensity of the ultrasonic wave applied to the cleaning liquid L is decreased near the radial center of the ultrasonic lens 23 , compared with that in the surrounding area.
  • those applied to the cleaning liquid L not through the radial center of the ultrasonic lens 23 are refracted radially around the axial line of the ultrasonic lens 23 on the curved surface formed on the lower end face 23 a of the ultrasonic lens 23 , and applied to a wide area of the cleaning liquid L.
  • the ultrasonic wave generated by the ultrasonic transducer 25 is prevented from exiting from the ultrasonic lens 23 substantially perpendicular to the surface of the material S, by the notch 24 and curved surface formed on the lower end face 23 a of the ultrasonic lens 23 .
  • FIG. 3A is a graph showing the intensity distribution of the ultrasonic wave measured under the ultrasonic lens 23 with the notch 24 according to the embodiment.
  • FIG. 3B is a graph showing the intensity distribution of the ultrasonic wave measured under the ultrasonic lens 23 without the notch 24 according to the embodiment.
  • the solid line indicates an RMS value
  • the chain line indicates a peak value
  • the dotted line indicates the radial center of the ultrasonic lens 23 .
  • the measuring conditions are as follows.
  • the intensity of an ultrasonic wave is decreased near the radial center of the ultrasonic lens 23 by providing the notch 24 at the radial center on the lower end face 23 a of the ultrasonic lens 23 .
  • FIG. 4A is gradation showing the intensity distribution of the ultrasonic wave measured under the ultrasonic lens 23 with the notch 24 according to the embodiment.
  • FIG. 4B is gradation showing the intensity distribution of the ultrasonic wave measured under the ultrasonic lens 23 without the notch 24 according to the embodiment.
  • the measuring conditions are as follows.
  • the intensity of an ultrasonic wave is decreased near the radial center of the ultrasonic lens 23 by providing the notch 24 at the radial center on the lower end face 23 a of the ultrasonic lens 23 . It is also seen that the intensity of an ultrasonic wave is increased in the circular area around the radial center of the ultrasonic lens 23 by adjusting the vertical thickness of the ultrasonic lens 23 .
  • the ultrasonic wave applied to the cleaning liquid L is reflected on that surface of the material S and transmitted to the ultrasonic lens 23 (this ultrasonic wave is called a reflected wave hereinafter).
  • the ultrasonic wave reflected on the surface is prevented from entering the ultrasonic lens 23 through the ultrasonic lens 23 , by the notch 24 and curved surface formed on the lower end face 23 a of the ultrasonic lens 23 .
  • the ultrasonic transducer 25 is not extremely heated by absorbing a reflected wave, deterioration of polarization is suppressed, and stable cleaning effect can be obtained for a long period of time.
  • FIG. 5 is a graph showing the temperatures of the ultrasonic transducer 25 according to the embodiment measured by supplying power continuously to the ultrasonic transducer 25 .
  • the solid line indicates the case when the notch 24 is formed in the ultrasonic lens 23
  • the chain line indicates the case when the notch 24 is not formed.
  • the sign A indicates the case when power of 10 [W] is supplied to the ultrasonic transducer 25
  • B indicates the case when power of 20 [W] is supplied to the ultrasonic transducer 25
  • C indicates the case when power of 30 [W] is supplied to the ultrasonic transducer 25 , respectively.
  • the measuring conditions are as follows.
  • FIG. 6 is a graph showing the temperatures of the ultrasonic transducer 25 according to the embodiment measured by supplying power intermittently to the ultrasonic transducer 25 .
  • the solid line indicates the case when the notch 24 is formed in the ultrasonic lens 23
  • the chain line indicates the case when the notch 24 is not formed.
  • the measuring conditions are as follows.
  • the temperature of the ultrasonic transducer 25 when the notch 24 is formed on the lower end face 23 a of the ultrasonic lens 23 is about 20% lower than the case when the notch 24 is not formed.
  • the ultrasonic transducer 25 is driven with the matching circuit 28 kept in the optimum matching state by initial setting, and a desired cleaning effect can be held.
  • FIG. 7 is a graph showing the voltage standing wave ratio VSWR when power is continuously supplied to the ultrasonic transducer 25 according to the embodiment.
  • the solid line indicates the case when the notch 24 is formed in the ultrasonic lens 23
  • the chain line indicates the case when the notch 24 is not formed.
  • FIG. 8 is a view showing the configuration of an ultrasonic wave application head 21 A according to a modification of the embodiment. As shown in FIG. 8 , a space 24 A is taken on the axial line I of the ultrasonic lens 23 in this modification, instead of forming the notch 24 on the lower end surface 23 a of the ultrasonic lens 23 .
  • the ultrasonic wave generated by the ultrasonic transducer 25 is prevented from being applied to the cleaning liquid L through the radial center of the ultrasonic lens 23 , and the ultrasonic wave reflected on the surface is prevented from entering the ultrasonic transducer 25 through the ultrasonic lens 23 .
  • a second embodiment of the present invention will be explained with reference to FIG. 9 and FIG. 10 .
  • the same components and effects as those of the first embodiment will be omitted.
  • FIG. 9 is a perspective view of an ultrasonic cleaning apparatus according to a second embodiment of the present invention.
  • the ultrasonic cleaning apparatus comprises a conveying unit 31 which conveys a material S such as a semiconductor substrate and glass substrate, and an ultrasonic wave application head 32 which supplies a cleaning liquid L to the material S conveyed by the conveying unit 31 , applies an ultrasonic wave to the cleaning liquid L, and cleans the surface of the material S.
  • a conveying unit 31 which conveys a material S such as a semiconductor substrate and glass substrate
  • an ultrasonic wave application head 32 which supplies a cleaning liquid L to the material S conveyed by the conveying unit 31 , applies an ultrasonic wave to the cleaning liquid L, and cleans the surface of the material S.
  • the ultrasonic wave application head 32 has a head man body 32 a .
  • the head main body 32 a is formed like a long plate, and has an opening 32 b faced to the surface of the material S.
  • a bar-shaped ultrasonic lens 33 is provided horizontally inside the head main body 21 a .
  • the ultrasonic lets 33 is made of SiO2, for example.
  • the lower end of the ultrasonic lens 33 projects from the opening 32 b of the head main body 32 a to the surface of the material S.
  • the lower end face 33 a opposite to the surface of the material S is composed of a curved portion projecting to the surface of the material S as it comes close to the radial center.
  • the vertical thickness of the ultrasonic lens 33 is set to have the highest intensity of an ultrasonic wave generated by an ultrasonic transducer 35 (described later) in the belt-like two areas located on both sides of the center in the width direction of the ultrasonic lens 33 respectively when the intensity is measured under the ultrasonic lens 33 .
  • a notch 34 (preventive portion) is formed along the axial line m of the ultrasonic lens 33 , at the radial center of the lower end face 33 a of the ultrasonic lens 33 .
  • the notch 34 is formed by two oblique planes 34 b inclined to the surface of the material S, and formed like a wedge with the diameter becoming small as it goes upward in this embodiment.
  • the ultrasonic transducer 35 is fixed with adhesive to the upper end face 33 b of the ultrasonic lens 33 .
  • the ultrasonic transducer 35 is made of lead titanate, for example, and generates an ultrasonic wave by receiving power from a power supply unit 37 .
  • the ultrasonic transducer 35 may also be made of piezoelectric element.
  • a matching circuit 38 is provided between the power supply unit 37 and ultrasonic transducer 35 .
  • the matching circuit 38 matches the impedance between the power supply unit 37 and ultrasonic transducer 35 , and is previously adjusted so that the power from the power supply unit 37 is most effectively converted to an ultrasonic wave in the ultrasonic transducer 35 .
  • a cooling tube (not shown) is provided around the ultrasonic lens 33 .
  • the cooling tube is connected to a cooling liquid supply source (not shown), flows a cooling liquid from the cooling liquid source, and cools the ultrasonic transducer 35 heated by generating an ultrasonic wave.
  • FIG. 10 is a perspective view of an ultrasonic lens according to a modification of the embodiment. As shown in FIG. 10 , an elliptical space 34 A (preventive portion) passing through the center of width direction is taken inside the ultrasonic lens 23 in this modification, instead of forming the notch 34 on the lower end surface 33 a of the ultrasonic lens 33 .
  • the ultrasonic wave generated by the ultrasonic transducer 35 is prevented from being applied to the cleaning liquid L through the center of width direction of the ultrasonic lens 33 , and the ultrasonic wave reflected on the surface of the material S is prevented from entering the ultrasonic transducer 35 through the ultrasonic lens 33 .
  • the present invention is not limited to the above-mentioned embodiments.
  • the invention may be embodied by modifying the components without departing from its essential characteristics.
  • the invention may also be embodied in various forms by combining the components disclosed in the above-mentioned embodiments. For example, some components may be deleted from the components used in the above-mentioned embodiments. It is also possible to combine the components which are used in different embodiments.
  • the ultrasonic transducer 25 may be provided at the position other than on the upper end face 33 b of the ultrasonic lens 23 , and the ultrasonic wave generated by the ultrasonic transducer 25 may be reflected on the reflection surface provided in the ultrasonic lens 23 and applied to the cleaning liquid L on the surface of the material. Even with this configuration, the same effects as the above-mentioned embodiments can be obtained.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
US11/159,199 2004-06-24 2005-06-23 Ultrasonic cleaning apparatus Abandoned US20050284509A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/870,272 US20080029132A1 (en) 2004-06-24 2007-10-10 Ultrasonic cleaning apparatus
US12/248,514 US7814919B2 (en) 2004-06-24 2008-10-09 Ultrasonic cleaning apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004-186500 2004-06-24
JP2004186500A JP4519541B2 (ja) 2004-06-24 2004-06-24 超音波洗浄装置

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US11/870,272 Continuation US20080029132A1 (en) 2004-06-24 2007-10-10 Ultrasonic cleaning apparatus

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US11/159,199 Abandoned US20050284509A1 (en) 2004-06-24 2005-06-23 Ultrasonic cleaning apparatus
US11/870,272 Abandoned US20080029132A1 (en) 2004-06-24 2007-10-10 Ultrasonic cleaning apparatus
US12/248,514 Active US7814919B2 (en) 2004-06-24 2008-10-09 Ultrasonic cleaning apparatus

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US11/870,272 Abandoned US20080029132A1 (en) 2004-06-24 2007-10-10 Ultrasonic cleaning apparatus
US12/248,514 Active US7814919B2 (en) 2004-06-24 2008-10-09 Ultrasonic cleaning apparatus

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US (3) US20050284509A1 (zh)
JP (1) JP4519541B2 (zh)
KR (1) KR100777854B1 (zh)
CN (1) CN1712144B (zh)
TW (1) TWI280161B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090071504A1 (en) * 2007-09-19 2009-03-19 Ahn Young-Ki Apparatus and method of generating ultrasonic vibration and apparatus and method of cleaning a wafer using the same
US20110041871A1 (en) * 2006-10-17 2011-02-24 Yan Fan System and method for the sonic-assisted cleaning of substrates utilizing a sonic-treated liquid
US20110079253A1 (en) * 2006-09-22 2011-04-07 Kaijo Corporation Ultrasonic Cleaning Apparatus

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KR101206776B1 (ko) * 2006-06-09 2012-11-30 주식회사 케이씨텍 기판 코팅 장치의 프라이밍 롤러 세정 유닛 및 세정 방법과 상기 세정 유닛을 포함하는 기판 코팅 장치
KR100840974B1 (ko) * 2007-08-07 2008-06-24 세메스 주식회사 초음파 발생장치 및 이를 갖는 기판 세정 장치
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KR100777854B1 (ko) 2007-11-21
JP4519541B2 (ja) 2010-08-04
US20090044844A1 (en) 2009-02-19
CN1712144A (zh) 2005-12-28
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