US20050252649A1 - Leadless lower temperature co-crystal phase transition metal heat conductive device - Google Patents
Leadless lower temperature co-crystal phase transition metal heat conductive device Download PDFInfo
- Publication number
- US20050252649A1 US20050252649A1 US10/842,347 US84234704A US2005252649A1 US 20050252649 A1 US20050252649 A1 US 20050252649A1 US 84234704 A US84234704 A US 84234704A US 2005252649 A1 US2005252649 A1 US 2005252649A1
- Authority
- US
- United States
- Prior art keywords
- heat conductive
- metal
- heat
- phase transition
- crystal phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a heat dissipation device, and particular to a leadless lower temperature co-crystal phase transition metal heat conductive device which has higher heat dissipating effect by using two metal substrates to enclose one layer of metal heat conductive sheet.
- heat conductive glue A or a film is coated upon a bottom of a heat dissipation device.
- most of the heat conductive glue A or film contain with lead which has lower heat conductivity.
- the heat conductive glue A or film cannot be used repeatedly. Further, coating the heat conductive glue A or the film is performed manually so that the distribution of the heat conductive glue A or the film is not uniform. Thereby, if too much heat conductive glue A or film is coated, then some of the heat conductive glue A or film will be extruded out so as to pollute the environment and as a result to affect the manufacturing process.
- the primary object of the present invention is to provide a leadless lower temperature co-crystal phase transition metal heat conductive device which comprises two metal substrates made from tin, indium, bismuth and a little other elements; a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet; a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device.
- the temperature range for co-crystal phase transition is between 50° C. to 70° C.
- FIG. 1 is an exploded perspective view of the present invention.
- FIG. 2 is an assembled view of the present invention.
- FIG. 3 is a cross section view of the present invention.
- FIG. 4 shows the embodiment of the present invention.
- FIG. 5 shows a prior art heat dissipation device.
- the leadless lower temperature co-crystal phase transition metal heat conductive sheet With reference to FIGS. 1, 2 and 3 , the leadless lower temperature co-crystal phase transition metal heat conductive sheet.
- the present invention mainly comprises the following elements.
- Two metal substrates 2 and 3 are made from tin, indium, bismuth and a little other elements.
- a metal heat conductive sheet 1 is installed between the two metal substrates 2 and 3 , where the metal substrates 2 and 3 have the effect of increasing heat dissipating ability of the metal heat conductive sheet 1 .
- a heat dissipation device 4 is installed above a structure formed by the metal substrates 2 , 3 and the metal heat conductive sheet 1 so as to dissipate heat from the metal heat conductive sheet 1 and the metal substrates 2 and 3 .
- a fan 5 is installed above the heat dissipation device 4 for dissipating heat from the heat dissipation device 4 .
- FIG. 4 The assembly view of the present invention is illustrated in FIG. 4 , where the present invention is realized on a circuit board 6 for dissipating heat generated from the circuit board 6 , wherein the temperature range for co-crystal phase transition is between 50° C. to 70° C. Thereby, the problem of the pollution of the conventional heat conductive glue will not occur.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Structure Of Printed Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
A leadless lower temperature co-crystal phase transition metal heat conductive device comprises two metal substrates made from tin, indium, bismuth and a little other elements; a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet; a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device. When leadless lower temperature co-crystal phase transition metal heat conductive device is placed on a circuit board, the temperature range for co-crystal phase transition is between 50° C. to 70° C.
Description
- The present invention relates to a heat dissipation device, and particular to a leadless lower temperature co-crystal phase transition metal heat conductive device which has higher heat dissipating effect by using two metal substrates to enclose one layer of metal heat conductive sheet.
- With reference to
FIG. 5 , conventionally, heat conductive glue A or a film is coated upon a bottom of a heat dissipation device. However, most of the heat conductive glue A or film contain with lead which has lower heat conductivity. Moreover, the heat conductive glue A or film cannot be used repeatedly. Further, coating the heat conductive glue A or the film is performed manually so that the distribution of the heat conductive glue A or the film is not uniform. Thereby, if too much heat conductive glue A or film is coated, then some of the heat conductive glue A or film will be extruded out so as to pollute the environment and as a result to affect the manufacturing process. - Accordingly, the primary object of the present invention is to provide a leadless lower temperature co-crystal phase transition metal heat conductive device which comprises two metal substrates made from tin, indium, bismuth and a little other elements; a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet; a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device. When leadless lower temperature co-crystal phase transition metal heat conductive device is placed on a circuit board, the temperature range for co-crystal phase transition is between 50° C. to 70° C.
- The various objects and advantages of the present invention will be more readily understood from the following detailed description when read in conjunction with the appended drawing.
-
FIG. 1 is an exploded perspective view of the present invention. -
FIG. 2 is an assembled view of the present invention. -
FIG. 3 is a cross section view of the present invention. -
FIG. 4 shows the embodiment of the present invention. -
FIG. 5 shows a prior art heat dissipation device. - In order that those skilled in the art can further understand the present invention, a description will be described in the following in details. However, these descriptions and the appended drawings are only used to cause those skilled in the art to understand the objects, features, and characteristics of the present invention, but not to be used to confine the scope and spirit of the present invention defined in the appended claims.
- With reference to
FIGS. 1, 2 and 3, the leadless lower temperature co-crystal phase transition metal heat conductive sheet. The present invention mainly comprises the following elements. - Two
metal substrates - A metal heat
conductive sheet 1 is installed between the twometal substrates metal substrates conductive sheet 1. - A
heat dissipation device 4 is installed above a structure formed by themetal substrates conductive sheet 1 so as to dissipate heat from the metal heatconductive sheet 1 and themetal substrates - A
fan 5 is installed above theheat dissipation device 4 for dissipating heat from theheat dissipation device 4. - The assembly view of the present invention is illustrated in
FIG. 4 , where the present invention is realized on acircuit board 6 for dissipating heat generated from thecircuit board 6, wherein the temperature range for co-crystal phase transition is between 50° C. to 70° C. Thereby, the problem of the pollution of the conventional heat conductive glue will not occur. - Advantages of the present invention will be described herein. Firstly, two metal substrates made from tin, indium, bismuth and a little other elements enclosing the metal heat conductive sheet has the effect of increasing the heat dissipation effect. Moreover, the problem of the pollution of the conventional heat conductive glue will not occur. Furthermore, the assembly of the present invention is rapid so as to increase the manufacturing efficiency.
- The present invention is thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the present invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.
Claims (2)
1. A leadless lower temperature co-crystal phase transition metal heat conductive device comprising:
two metal substrates made from tin, indium, bismuth and a little other elements;
a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet;
a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and
a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device.
2. The leadless lower temperature co-crystal phase transition metal heat conductive device as claimed in claim 1 , wherein when leadless lower temperature co-crystal phase transition metal heat conductive device is placed on a circuit board, the temperature range for co-crystal phase transition is between 50° C. to 70° C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/842,347 US20050252649A1 (en) | 2004-05-11 | 2004-05-11 | Leadless lower temperature co-crystal phase transition metal heat conductive device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/842,347 US20050252649A1 (en) | 2004-05-11 | 2004-05-11 | Leadless lower temperature co-crystal phase transition metal heat conductive device |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050252649A1 true US20050252649A1 (en) | 2005-11-17 |
Family
ID=35308311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/842,347 Abandoned US20050252649A1 (en) | 2004-05-11 | 2004-05-11 | Leadless lower temperature co-crystal phase transition metal heat conductive device |
Country Status (1)
Country | Link |
---|---|
US (1) | US20050252649A1 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050073816A1 (en) * | 2000-02-25 | 2005-04-07 | Thermagon Inc. | Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink |
US20070059356A1 (en) * | 2002-05-31 | 2007-03-15 | Almarsson Oern | Pharmaceutical co-crystal compositions of drugs such as carbamazepine, celecoxib, olanzapine, itraconazole, topiramate, modafinil, 5-fluorouracil, hydrochlorothiazide, acetaminophen, aspirin, flurbiprofen, phenytoin and ibuprofen |
US20090088443A1 (en) * | 2002-02-15 | 2009-04-02 | Julius Remenar | Novel crystalline forms of conazoles and methods of making and using the same |
US7790905B2 (en) | 2002-02-15 | 2010-09-07 | Mcneil-Ppc, Inc. | Pharmaceutical propylene glycol solvate compositions |
US7927613B2 (en) | 2002-02-15 | 2011-04-19 | University Of South Florida | Pharmaceutical co-crystal compositions |
US20110247796A1 (en) * | 2010-04-07 | 2011-10-13 | Hon Hai Precision Industry Co., Ltd. | Heat sink |
US8183290B2 (en) | 2002-12-30 | 2012-05-22 | Mcneil-Ppc, Inc. | Pharmaceutically acceptable propylene glycol solvate of naproxen |
US8362062B2 (en) | 2002-02-15 | 2013-01-29 | Mcneil-Ppc, Inc. | Pharmaceutical compositions with improved dissolution |
US10633344B2 (en) | 2002-03-01 | 2020-04-28 | University Of South Florida | Multiple-component solid phases containing at least one active pharmaceutical ingredient |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6616999B1 (en) * | 2000-05-17 | 2003-09-09 | Raymond G. Freuler | Preapplicable phase change thermal interface pad |
US6835453B2 (en) * | 2001-01-22 | 2004-12-28 | Parker-Hannifin Corporation | Clean release, phase change thermal interface |
US6841867B2 (en) * | 2002-12-30 | 2005-01-11 | Intel Corporation | Gel thermal interface materials comprising fillers having low melting point and electronic packages comprising these gel thermal interface materials |
US6945312B2 (en) * | 2002-12-20 | 2005-09-20 | Saint-Gobain Performance Plastics Corporation | Thermal interface material and methods for assembling and operating devices using such material |
US6946190B2 (en) * | 2002-02-06 | 2005-09-20 | Parker-Hannifin Corporation | Thermal management materials |
US6956739B2 (en) * | 2002-10-29 | 2005-10-18 | Parker-Hannifin Corporation | High temperature stable thermal interface material |
US7078109B2 (en) * | 2000-02-25 | 2006-07-18 | Thermagon Inc. | Heat spreading thermal interface structure |
-
2004
- 2004-05-11 US US10/842,347 patent/US20050252649A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7078109B2 (en) * | 2000-02-25 | 2006-07-18 | Thermagon Inc. | Heat spreading thermal interface structure |
US6616999B1 (en) * | 2000-05-17 | 2003-09-09 | Raymond G. Freuler | Preapplicable phase change thermal interface pad |
US6835453B2 (en) * | 2001-01-22 | 2004-12-28 | Parker-Hannifin Corporation | Clean release, phase change thermal interface |
US6946190B2 (en) * | 2002-02-06 | 2005-09-20 | Parker-Hannifin Corporation | Thermal management materials |
US6956739B2 (en) * | 2002-10-29 | 2005-10-18 | Parker-Hannifin Corporation | High temperature stable thermal interface material |
US6945312B2 (en) * | 2002-12-20 | 2005-09-20 | Saint-Gobain Performance Plastics Corporation | Thermal interface material and methods for assembling and operating devices using such material |
US6841867B2 (en) * | 2002-12-30 | 2005-01-11 | Intel Corporation | Gel thermal interface materials comprising fillers having low melting point and electronic packages comprising these gel thermal interface materials |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050073816A1 (en) * | 2000-02-25 | 2005-04-07 | Thermagon Inc. | Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink |
US7369411B2 (en) * | 2000-02-25 | 2008-05-06 | Thermagon, Inc. | Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink |
US20090088443A1 (en) * | 2002-02-15 | 2009-04-02 | Julius Remenar | Novel crystalline forms of conazoles and methods of making and using the same |
US7790905B2 (en) | 2002-02-15 | 2010-09-07 | Mcneil-Ppc, Inc. | Pharmaceutical propylene glycol solvate compositions |
US7927613B2 (en) | 2002-02-15 | 2011-04-19 | University Of South Florida | Pharmaceutical co-crystal compositions |
US8362062B2 (en) | 2002-02-15 | 2013-01-29 | Mcneil-Ppc, Inc. | Pharmaceutical compositions with improved dissolution |
US10633344B2 (en) | 2002-03-01 | 2020-04-28 | University Of South Florida | Multiple-component solid phases containing at least one active pharmaceutical ingredient |
US20070059356A1 (en) * | 2002-05-31 | 2007-03-15 | Almarsson Oern | Pharmaceutical co-crystal compositions of drugs such as carbamazepine, celecoxib, olanzapine, itraconazole, topiramate, modafinil, 5-fluorouracil, hydrochlorothiazide, acetaminophen, aspirin, flurbiprofen, phenytoin and ibuprofen |
US8183290B2 (en) | 2002-12-30 | 2012-05-22 | Mcneil-Ppc, Inc. | Pharmaceutically acceptable propylene glycol solvate of naproxen |
US8492423B2 (en) | 2002-12-30 | 2013-07-23 | Mcneil-Ppc, Inc. | Pharmaceutical propylene glycol solvate compositions |
US20110247796A1 (en) * | 2010-04-07 | 2011-10-13 | Hon Hai Precision Industry Co., Ltd. | Heat sink |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: AMPEC TECHNOLOGY CO., LTD., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHIU, MING-CHI;CHANG, HSIN-HSIANG;REEL/FRAME:015314/0265 Effective date: 20040420 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |