US20050213384A1 - Semiconductor device and method of forming the same - Google Patents
Semiconductor device and method of forming the same Download PDFInfo
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- US20050213384A1 US20050213384A1 US11/135,775 US13577505A US2005213384A1 US 20050213384 A1 US20050213384 A1 US 20050213384A1 US 13577505 A US13577505 A US 13577505A US 2005213384 A1 US2005213384 A1 US 2005213384A1
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- gate line
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 125000006850 spacer group Chemical group 0.000 claims abstract description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 19
- 238000009413 insulation Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- This disclosure generally relates to a semiconductor device and a method of forming the same and in particular, to a structure of a semiconductor device that protects an end of a gate line and a method of forming the same.
- FIG. 1A is a plan diagram illustrating a semiconductor device including a gate line in accordance with the conventional technology.
- FIG. 1B contains cross-sectional diagrams taken along the line I-I′ and the line II-II′, respectively, of the semiconductor device of FIG. 1A .
- the letter ‘aa’ indicates a region 1 that is a cross-sectional diagram taken along the I-I′ line of FIG. 1A
- the letter ‘bb’ indicates a region 2 that is a cross-sectional diagram taken along the II-II′ line of FIG. 1A .
- a field oxide (FOX) 3 is formed at a semiconductor substrate 1 to define an active region (AR).
- a gate oxide layer 5 , a polysilicon layer 7 , a tungsten layer 9 , and a capping layer 11 are sequentially stacked on an entire surface of the semiconductor substrate 1 .
- the layers 11 , 9 , 7 and 5 are sequentially patterned to form a gate line (GL).
- end parts of a photo mask (M) are orthogonal.
- a plan view of the end (E) of the gate line that is subsequently formed becomes rounded as illustrated in FIG. 1A and a side view thereof becomes gently sloped as illustrated in FIG. 1B .
- a low-concentration impurity-doped region 4 is formed by using the gate line (GL) as an ion-implantation mask.
- an insulation layer is stacked on an entire surface of the semiconductor substrate 1 and anisotropically etched to form a spacer 13 covering sidewalls of the gate line (GL).
- a high concentration impurity-doped region 14 is formed by using the gate line (GL) and the spacer 13 as ion-implantation masks.
- the side slope of the end (E) of the gate line (GL) is gentle, almost all of the insulation layer is removed to form a very thin and imperfect spacer 13 at the region 2 (bb).
- Embodiments of the invention address these and other disadvantages of the prior art.
- Embodiments of the invention provide structures of a semiconductor substrate that protect an end of a gate line in order to improve reliability of a semiconductor device. Embodiments of the invention also provide methods of forming the same structures.
- FIG. 1A is a plan diagram illustrating a semiconductor device including a gate line in accordance with a conventional technology.
- FIG. 1B contains two cross-sectional diagrams taken along the line I-I′ and the line II-II′, respectively, of the semiconductor device illustrated in FIG. 1A .
- FIG. 2 is a plan diagram illustrating a semiconductor device in accordance with an embodiment of the invention.
- FIG. 3 contains three cross-sectional diagrams of the semiconductor device shown in FIG. 2 , taken along the line III-III′, the line IV-IV′, and the line V-V′, respectively.
- FIGS. 4A through 4C are cross-sectional diagrams illustrating a method of forming the structure of FIG. 3 .
- FIG. 5 contains three cross-sectional diagrams of the semiconductor device shown in FIG. 2 , taken along the line III-III′, the line IV-IV′, and the line V-V′, respectively, but in accordance with another embodiment of the invention.
- FIGS. 6A through 6C are cross-sectional diagrams illustrating a method of forming the structure of FIG. 5 .
- relative terms such as “beneath”, may be used herein to describe one element's relationship to another elements as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in the Figures is turned over, elements described as “below” other elements would then be oriented “above” the other elements. The exemplary term “below”, can therefore, encompasses both an orientation of above and below.
- first and second are used herein to describe various regions, layers and/or sections, these regions, layers, and/or sections should not be limited by these terms. These terms are only used to distinguish one region, layer, or section from another region, layer, or section. Thus, a first region, layer or section discussed below could alternatively be termed a second region, layer or section, and similarly, a second region, layer, or section could be termed a first region, layer, or section without departing from the teachings of the invention.
- Like numbers refer to like elements throughout.
- the letter ‘a’ indicates a first region that is a cross-sectional diagram taken along the III-III′ line of FIG. 2
- the letter ‘b’ indicates a second region that is a cross-sectional diagram taken along the IV-IV′ line thereof
- the letter ‘c’ indicates a third region that is a cross-sectional diagram taken along the V-V′ line thereof.
- FIG. 2 is a plan diagram illustrating a semiconductor device in accordance with an embodiment of the invention
- FIG. 3 contains three cross-sectional diagrams of the semiconductor device shown in FIG. 2 , taken along the line III-III′, the line IV-IV′, and the line V-V′, respectively.
- a field oxide (FOX) 102 is present at a semiconductor substrate 100 to define an active region (AR).
- a gate line (GL) crosses over the active region (AR).
- the gate line (GL) is composed of a gate oxide layer 104 , a polysilicon layer 106 , a tungsten layer 108 , and a capping layer pattern 110 that are sequentially stacked.
- the gate oxide layer 104 may have a thickness of about 50 ⁇ 300 ⁇
- the poly silicon layer 106 may have a thickness of about 700 ⁇ 900 ⁇ .
- the thickness of the tungsten layer 108 may be about 400 ⁇ 600 ⁇
- that of the capping layer 110 may be 1900 ⁇ 2100 ⁇ .
- a spacer 114 a covers sidewalls of the gate line (GL).
- the active region (AR) there is a low concentration impurity-doped region 112 to contact with side lower ends of the gate line (GL) and a high concentration impurity-doped region 115 to contact with those of the spacer 114 a .
- the end (E) is located on the field oxide 102 and covered by a protecting pattern (S) 114 b .
- the spacer 114 a and the protecting pattern (S) 114 b are formed of the same material and preferably of silicon nitride or silicon oxide.
- the protecting pattern (S) 114 b may have a thickness of 400 ⁇ 600 ⁇ .
- FIGS. 4A through 4C are cross-sectional diagrams illustrating a method of forming the structure of FIG. 3 .
- a field oxide (FOX) 102 is formed on a semiconductor substrate 100 to define an active region (AR).
- a gate oxide layer 104 , a polysilicon layer 106 , a tungsten layer 108 , and a capping layer 110 are sequentially stacked at an entire surface of the semiconductor substrate 100 .
- the capping layer 110 may be formed of silicon nitride.
- the layers 110 , 108 , 106 , and 104 are sequentially patterned to form a gate line (GL).
- a low concentration impurity-doped region 112 is formed in the active region (AR) by using the gate line (GL) as an ion-implantation mask.
- an insulation layer 114 is conformally stacked over an entire surface of the semiconductor substrate 100 .
- the insulation layer 114 may be formed of silicon nitride or silicon oxide.
- a photoresist pattern (PR 1 ) is formed to cover only the end (E) of the gate line (GL).
- the insulation layer 114 is anisotropically etched by using the photoresist pattern (PR 1 ).
- a spacer 114 a is formed to cover sidewalls of the gate line (GL) and, simultaneously, a protecting pattern (S) 114 b is formed to cover the end (E) of the gate line (GL).
- the photoresist pattern (PR 1 ) is removed.
- a high concentration impurity-doped region 115 is formed in the active region (AR) of the semiconductor substrate 100 by using the gate line (GL), the spacer 114 a and the protecting pattern 114 b as ion-implantation masks.
- the protecting pattern (S) 114 b protects the end (E) of the gate line (GL), it is possible to prevent the tungsten from being damaged by a cleaning solution such as SC 1 .
- FIG. 5 contains three cross-sectional diagrams of the semiconductor device shown in FIG. 2 , taken along the line III-III′, the line IV-IV′, and the line V-V′, respectively, but in accordance with another embodiment of the invention.
- a semiconductor device includes a spacer 114 a covering sidewalls and ends (E) of a gate line (GL) and a protecting pattern (S) 116 b covering the ends (E) of the gate line (GL).
- the spacer 114 a is interposed between the gate line (GL) and the protecting pattern (S) 116 b at the end (E) of the gate line (GL).
- the protecting pattern (S) 116 b may be thinner than the protecting pattern (S) 114 b of the embodiment of FIG. 3 and preferably may have a thickness of that is about one fifth the thickness of the protecting pattern (S) 114 b .
- the protecting pattern (S) 116 b may have a thickness of 80 ⁇ 120 ⁇ .
- FIGS. 6A through 6C are cross-sectional diagrams illustrating a method of forming the structure of FIG. 5 .
- an insulation layer 114 is entirely anisotropically etched at the state of FIG. 4B of the first embodiment, thereby forming a spacer 114 a covering sidewalls and ends (E) of the gate line (GL).
- a high concentration impurity-doped region 115 is formed in an active region (AR) of the semiconductor substrate 100 by using the gate line (GL) and the spacer 114 a as ion-implantation masks.
- a protecting layer 116 is stacked on an entire surface of the semiconductor substrate 100 . At this time, the protecting layer 116 may be formed of the same material with the insulation layer 114 .
- the protecting layer 116 may be formed in a thickness that is approximately one fifth the thickness of the insulation layer 114 , and preferably is a thickness of 80 ⁇ 120 ⁇ .
- a photoresist pattern (PR 2 ) is formed on the protecting layer 116 to cover the ends (E) of the gate line (GL).
- An anisotropic etch process is performed with respect to the protecting layer 116 by using the photoresist pattern (PR 2 ) as an etch mask, thereby forming a protecting pattern (S) 116 b covering the ends (E) of the gate line (GL) but exposing the gate line (GL) on the active region (AR).
- the photoresist pattern (PR 2 ) is removed. Except for the thickness of the protecting layer 116 , the process conditions and other layers are identical to the embodiment illustrated in FIG. 3 .
- Embodiments of the invention may include a semiconductor substrate, a gate line crossing over the semiconductor substrate, and a protecting pattern covering ends of the gate line.
- the protecting pattern may be formed of silicon nitride or silicon oxide.
- Embodiments may further include a spacer covering sidewalls of the gate line and being interposed between the gate line and the protecting pattern at the ends of the gate line.
- the spacer may be formed of silicon nitride or silicon oxide.
- the gate line includes an oxide pattern and a conductive pattern that are sequentially stacked on the semiconductor substrate.
- the conductive pattern is formed of a metal selected from a group consisting of tungsten, aluminum and aluminum.
- the semiconductor device may be formed by the following method. First, a gate line is formed at a semiconductor substrate. A spacer is formed to cover sidewalls of the gate line. Next, a protecting pattern is formed to cover ends of the gate line.
- the spacer and the protecting pattern may be simultaneously formed of the same material.
- the material may be silicon nitride or silicon oxide.
- the gate line may be formed by sequentially stacking an oxide layer and a conductive layer on a semiconductor substrate and sequentially patterning the conductive layer and the oxide layer.
- the conductive layer may be formed of a metal selected from a group consisting of tungsten, copper, and aluminum.
- the semiconductor substrate since the semiconductor substrate includes a protecting pattern covering ends of a gate line, the ends of the gate line are protected by the protecting pattern, thereby preventing gate electrodes from being damaged by a cleaning solution such as SC 1 in a subsequent process.
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Abstract
A semiconductor device protecting the ends of a gate line and a method of forming the same are disclosed. The semiconductor device includes a semiconductor substrate, a gate line crossing over the semiconductor substrate, and a protecting pattern covering ends of the gate line. According to the method, a gate line is formed at a semiconductor substrate. A spacer is formed to cover sidewalls of the gate line. A protecting pattern is formed to cover the ends of the gate line. The protecting pattern may be formed of silicon nitride or silicon oxide. Since the protecting pattern protects ends of a gate line, it is possible to prevent gate electrodes from being damaged by a cleaning solution such as SC1 in a subsequent process.
Description
- This application is a Divisional of U.S. patent Ser. No. 10/633,408, filed on Jul. 31, 2003, now pending, which claims priority from Korean Patent Application No. 2002-59835, filed on Oct. 1, 2002, the contents of which are herein incorporated by reference in their entirety.
- 1. Technical Field of the Invention
- This disclosure generally relates to a semiconductor device and a method of forming the same and in particular, to a structure of a semiconductor device that protects an end of a gate line and a method of forming the same.
- 2. Background of the Invention
- During a photo-lithography process, one of the many processes used to form a semiconductor device, the end parts of photoresist patterns become rounded due to proximity effects. As semiconductor devices become highly integrated, the pattern size is reduced and proximity effects become increasingly problematic.
-
FIG. 1A is a plan diagram illustrating a semiconductor device including a gate line in accordance with the conventional technology. -
FIG. 1B contains cross-sectional diagrams taken along the line I-I′ and the line II-II′, respectively, of the semiconductor device ofFIG. 1A . InFIG. 1B , the letter ‘aa’ indicates a region 1 that is a cross-sectional diagram taken along the I-I′ line ofFIG. 1A , and the letter ‘bb’ indicates a region 2 that is a cross-sectional diagram taken along the II-II′ line ofFIG. 1A . - Referring to
FIGS. 1A and 1B , a field oxide (FOX) 3 is formed at a semiconductor substrate 1 to define an active region (AR). Agate oxide layer 5, apolysilicon layer 7, atungsten layer 9, and acapping layer 11 are sequentially stacked on an entire surface of the semiconductor substrate 1. Thelayers FIG. 1A and a side view thereof becomes gently sloped as illustrated inFIG. 1B . A low-concentration impurity-dopedregion 4 is formed by using the gate line (GL) as an ion-implantation mask. In order to form an lightly doped drain, an insulation layer is stacked on an entire surface of the semiconductor substrate 1 and anisotropically etched to form aspacer 13 covering sidewalls of the gate line (GL). Next, a high concentration impurity-dopedregion 14 is formed by using the gate line (GL) and thespacer 13 as ion-implantation masks. At this time, since the side slope of the end (E) of the gate line (GL) is gentle, almost all of the insulation layer is removed to form a very thin andimperfect spacer 13 at the region 2 (bb). When a subsequent cleaning process is performed using an SC1 solution that is frequently used in a cleaning process and made of a mixture of NH4OH, H2O2 and deionized water, the SC1 penetrates the end (E) of the gate line (GL) that is weak with thethin spacer 13, thereby dissolving thetungsten layer 9. This results in reliability problems for the semiconductor device. - Embodiments of the invention address these and other disadvantages of the prior art.
- Embodiments of the invention provide structures of a semiconductor substrate that protect an end of a gate line in order to improve reliability of a semiconductor device. Embodiments of the invention also provide methods of forming the same structures.
-
FIG. 1A is a plan diagram illustrating a semiconductor device including a gate line in accordance with a conventional technology. -
FIG. 1B contains two cross-sectional diagrams taken along the line I-I′ and the line II-II′, respectively, of the semiconductor device illustrated inFIG. 1A . -
FIG. 2 is a plan diagram illustrating a semiconductor device in accordance with an embodiment of the invention. -
FIG. 3 contains three cross-sectional diagrams of the semiconductor device shown inFIG. 2 , taken along the line III-III′, the line IV-IV′, and the line V-V′, respectively. -
FIGS. 4A through 4C are cross-sectional diagrams illustrating a method of forming the structure ofFIG. 3 . -
FIG. 5 contains three cross-sectional diagrams of the semiconductor device shown inFIG. 2 , taken along the line III-III′, the line IV-IV′, and the line V-V′, respectively, but in accordance with another embodiment of the invention. -
FIGS. 6A through 6C are cross-sectional diagrams illustrating a method of forming the structure ofFIG. 5 . - The invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
- In the drawings, the thickness of layers and regions are exaggerated for clarity. It will be understood that when an element such as a layer, region or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present.
- Furthermore, relative terms, such as “beneath”, may be used herein to describe one element's relationship to another elements as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in the Figures is turned over, elements described as “below” other elements would then be oriented “above” the other elements. The exemplary term “below”, can therefore, encompasses both an orientation of above and below.
- It will be understood that although the terms first and second are used herein to describe various regions, layers and/or sections, these regions, layers, and/or sections should not be limited by these terms. These terms are only used to distinguish one region, layer, or section from another region, layer, or section. Thus, a first region, layer or section discussed below could alternatively be termed a second region, layer or section, and similarly, a second region, layer, or section could be termed a first region, layer, or section without departing from the teachings of the invention. Like numbers refer to like elements throughout. In FIGS. 3, 4A-4C, 5 and 6A-6C, the letter ‘a’ indicates a first region that is a cross-sectional diagram taken along the III-III′ line of
FIG. 2 , the letter ‘b’ indicates a second region that is a cross-sectional diagram taken along the IV-IV′ line thereof, and the letter ‘c’ indicates a third region that is a cross-sectional diagram taken along the V-V′ line thereof. -
FIG. 2 is a plan diagram illustrating a semiconductor device in accordance with an embodiment of the invention, whileFIG. 3 contains three cross-sectional diagrams of the semiconductor device shown inFIG. 2 , taken along the line III-III′, the line IV-IV′, and the line V-V′, respectively. - Referring to
FIGS. 2 and 3 , a field oxide (FOX) 102 is present at asemiconductor substrate 100 to define an active region (AR). A gate line (GL) crosses over the active region (AR). The gate line (GL) is composed of agate oxide layer 104, apolysilicon layer 106, atungsten layer 108, and acapping layer pattern 110 that are sequentially stacked. At this time, thegate oxide layer 104 may have a thickness of about 50˜300 Å, and thepoly silicon layer 106 may have a thickness of about 700˜900 Å. The thickness of thetungsten layer 108 may be about 400˜600 Å, and that of thecapping layer 110 may be 1900˜2100 Å. Aspacer 114 a covers sidewalls of the gate line (GL). In the active region (AR), there is a low concentration impurity-dopedregion 112 to contact with side lower ends of the gate line (GL) and a high concentration impurity-dopedregion 115 to contact with those of thespacer 114 a. The end (E) is located on thefield oxide 102 and covered by a protecting pattern (S) 114 b. Thespacer 114 a and the protecting pattern (S) 114 b are formed of the same material and preferably of silicon nitride or silicon oxide. The protecting pattern (S) 114 b may have a thickness of 400˜600 Å. -
FIGS. 4A through 4C are cross-sectional diagrams illustrating a method of forming the structure ofFIG. 3 . - Referring to
FIG. 4A , a field oxide (FOX) 102 is formed on asemiconductor substrate 100 to define an active region (AR). Agate oxide layer 104, apolysilicon layer 106, atungsten layer 108, and acapping layer 110 are sequentially stacked at an entire surface of thesemiconductor substrate 100. Thecapping layer 110 may be formed of silicon nitride. Thelayers region 112 is formed in the active region (AR) by using the gate line (GL) as an ion-implantation mask. - Referring to
FIGS. 4B and 4C , aninsulation layer 114 is conformally stacked over an entire surface of thesemiconductor substrate 100. Theinsulation layer 114 may be formed of silicon nitride or silicon oxide. A photoresist pattern (PR1) is formed to cover only the end (E) of the gate line (GL). Theinsulation layer 114 is anisotropically etched by using the photoresist pattern (PR1). Thus, as illustrated inFIG. 3 , aspacer 114 a is formed to cover sidewalls of the gate line (GL) and, simultaneously, a protecting pattern (S) 114 b is formed to cover the end (E) of the gate line (GL). The photoresist pattern (PR1) is removed. A high concentration impurity-dopedregion 115 is formed in the active region (AR) of thesemiconductor substrate 100 by using the gate line (GL), thespacer 114 a and the protectingpattern 114 b as ion-implantation masks. - According to this embodiment of the invention, since the protecting pattern (S) 114 b protects the end (E) of the gate line (GL), it is possible to prevent the tungsten from being damaged by a cleaning solution such as SC1.
-
FIG. 5 contains three cross-sectional diagrams of the semiconductor device shown inFIG. 2 , taken along the line III-III′, the line IV-IV′, and the line V-V′, respectively, but in accordance with another embodiment of the invention. - Referring to
FIGS. 2 and 5 , a semiconductor device includes aspacer 114 a covering sidewalls and ends (E) of a gate line (GL) and a protecting pattern (S) 116 b covering the ends (E) of the gate line (GL). At this time, thespacer 114 a is interposed between the gate line (GL) and the protecting pattern (S) 116 b at the end (E) of the gate line (GL). The protecting pattern (S) 116 b may be thinner than the protecting pattern (S) 114 b of the embodiment ofFIG. 3 and preferably may have a thickness of that is about one fifth the thickness of the protecting pattern (S) 114 b. The protecting pattern (S) 116 b may have a thickness of 80˜120 Å. -
FIGS. 6A through 6C are cross-sectional diagrams illustrating a method of forming the structure ofFIG. 5 . - Referring to
FIGS. 6A through 6C , aninsulation layer 114 is entirely anisotropically etched at the state ofFIG. 4B of the first embodiment, thereby forming aspacer 114 a covering sidewalls and ends (E) of the gate line (GL). A high concentration impurity-dopedregion 115 is formed in an active region (AR) of thesemiconductor substrate 100 by using the gate line (GL) and thespacer 114 a as ion-implantation masks. A protectinglayer 116 is stacked on an entire surface of thesemiconductor substrate 100. At this time, the protectinglayer 116 may be formed of the same material with theinsulation layer 114. The protectinglayer 116 may be formed in a thickness that is approximately one fifth the thickness of theinsulation layer 114, and preferably is a thickness of 80˜120 Å. A photoresist pattern (PR2) is formed on theprotecting layer 116 to cover the ends (E) of the gate line (GL). An anisotropic etch process is performed with respect to theprotecting layer 116 by using the photoresist pattern (PR2) as an etch mask, thereby forming a protecting pattern (S) 116 b covering the ends (E) of the gate line (GL) but exposing the gate line (GL) on the active region (AR). The photoresist pattern (PR2) is removed. Except for the thickness of theprotecting layer 116, the process conditions and other layers are identical to the embodiment illustrated inFIG. 3 . - Embodiments of the invention will now be described in a non-limiting way.
- Embodiments of the invention may include a semiconductor substrate, a gate line crossing over the semiconductor substrate, and a protecting pattern covering ends of the gate line. The protecting pattern may be formed of silicon nitride or silicon oxide.
- Embodiments may further include a spacer covering sidewalls of the gate line and being interposed between the gate line and the protecting pattern at the ends of the gate line. The spacer may be formed of silicon nitride or silicon oxide. The gate line includes an oxide pattern and a conductive pattern that are sequentially stacked on the semiconductor substrate. The conductive pattern is formed of a metal selected from a group consisting of tungsten, aluminum and aluminum.
- In accordance with an embodiment of the invention, the semiconductor device may be formed by the following method. First, a gate line is formed at a semiconductor substrate. A spacer is formed to cover sidewalls of the gate line. Next, a protecting pattern is formed to cover ends of the gate line.
- In this method, the spacer and the protecting pattern may be simultaneously formed of the same material. The material may be silicon nitride or silicon oxide.
- In this method, the gate line may be formed by sequentially stacking an oxide layer and a conductive layer on a semiconductor substrate and sequentially patterning the conductive layer and the oxide layer. The conductive layer may be formed of a metal selected from a group consisting of tungsten, copper, and aluminum.
- According to embodiments of the invention, since the semiconductor substrate includes a protecting pattern covering ends of a gate line, the ends of the gate line are protected by the protecting pattern, thereby preventing gate electrodes from being damaged by a cleaning solution such as SC1 in a subsequent process.
- Having described several exemplary embodiments of the invention, it is noted that various modifications may be made by persons skilled in the art in light of the above teachings. It is therefore to be understood that changes may be made to the particular embodiments of the invention disclosed above that are within the scope and the spirit of the invention as defined by the following appended claims.
Claims (5)
1. A method of forming a semiconductor device, comprising:
forming a gate line at a semiconductor substrate;
forming a spacer covering sidewalls of the gate line; and
forming a protecting pattern covering ends of the gate line.
2. The method of claim 1 , wherein forming a spacer and forming a protecting pattern comprises forming the spacer and forming the protecting pattern simultaneously, wherein the spacer and the protecting pattern are formed of a same material.
3. The method of claim 2 , wherein the same material is chosen from the group consisting of silicon nitride and silicon oxide.
4. The method of claim 1 , wherein forming the gate line comprises:
sequentially stacking an oxide layer and a conductive layer on the semiconductor substrate; and
sequentially patterning the conductive layer and the oxide layer.
5. The method of claim 4 , wherein the conductive layer is formed of a metal selected from the group consisting of tungsten, copper, and aluminum.
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US11/135,775 US20050213384A1 (en) | 2002-10-01 | 2005-05-23 | Semiconductor device and method of forming the same |
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KR2002-59835 | 2002-10-01 | ||
KR10-2002-0059835A KR100495661B1 (en) | 2002-10-01 | 2002-10-01 | Semiconductor device and method of forming the same |
US10/633,408 US7309127B2 (en) | 2002-08-14 | 2003-08-04 | Ophthalmic measuring apparatus |
US11/135,775 US20050213384A1 (en) | 2002-10-01 | 2005-05-23 | Semiconductor device and method of forming the same |
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US10/633,408 Division US7309127B2 (en) | 2002-08-14 | 2003-08-04 | Ophthalmic measuring apparatus |
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US10/633,048 Expired - Lifetime US6921919B2 (en) | 2002-10-01 | 2003-07-31 | Semiconductor device and method of forming the same |
US11/135,775 Abandoned US20050213384A1 (en) | 2002-10-01 | 2005-05-23 | Semiconductor device and method of forming the same |
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US5695572A (en) * | 1994-08-25 | 1997-12-09 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Aktiengesellschaft | Cleaning agent and method for cleaning semiconductor wafers |
US5998290A (en) * | 1997-07-30 | 1999-12-07 | Micron Technology, Inc. | Method to protect gate stack material during source/drain reoxidation |
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US6150223A (en) * | 1999-04-07 | 2000-11-21 | United Microelectronics Corp. | Method for forming gate spacers with different widths |
US6440797B1 (en) * | 2001-09-28 | 2002-08-27 | Advanced Micro Devices, Inc. | Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory |
US20030202134A1 (en) * | 1992-06-01 | 2003-10-30 | Dong-Gyu Kim | Active matrix display devices having improved opening and contrast ratios and methods of forming same |
US6897534B2 (en) * | 1998-10-08 | 2005-05-24 | Kabushiki Kaisha Toshiba | Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same |
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KR100275953B1 (en) * | 1998-09-14 | 2001-01-15 | 김영환 | Method of manufacturing thin film transistor |
KR20010017499A (en) * | 1999-08-12 | 2001-03-05 | 윤종용 | method for fabricating semiconductor device |
KR100307537B1 (en) * | 1999-10-18 | 2001-11-02 | 박종섭 | Method for forming gate of semiconductor device |
KR20010058477A (en) * | 1999-12-30 | 2001-07-06 | 박종섭 | Method For Forming The Word-Line Preventing The Tungsten Layer Oxidization |
-
2002
- 2002-10-01 KR KR10-2002-0059835A patent/KR100495661B1/en active IP Right Grant
-
2003
- 2003-07-31 US US10/633,048 patent/US6921919B2/en not_active Expired - Lifetime
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2005
- 2005-05-23 US US11/135,775 patent/US20050213384A1/en not_active Abandoned
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US20030202134A1 (en) * | 1992-06-01 | 2003-10-30 | Dong-Gyu Kim | Active matrix display devices having improved opening and contrast ratios and methods of forming same |
US5695572A (en) * | 1994-08-25 | 1997-12-09 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Aktiengesellschaft | Cleaning agent and method for cleaning semiconductor wafers |
US5998290A (en) * | 1997-07-30 | 1999-12-07 | Micron Technology, Inc. | Method to protect gate stack material during source/drain reoxidation |
US6093627A (en) * | 1998-03-27 | 2000-07-25 | Mosel Vitelic, Inc. | Self-aligned contact process using silicon spacers |
US6107171A (en) * | 1998-07-09 | 2000-08-22 | Vanguard International Semiconductor Corporation | Method to manufacture metal gate of integrated circuits |
US6897534B2 (en) * | 1998-10-08 | 2005-05-24 | Kabushiki Kaisha Toshiba | Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same |
US6150223A (en) * | 1999-04-07 | 2000-11-21 | United Microelectronics Corp. | Method for forming gate spacers with different widths |
US6440797B1 (en) * | 2001-09-28 | 2002-08-27 | Advanced Micro Devices, Inc. | Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory |
Also Published As
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US20040061189A1 (en) | 2004-04-01 |
KR100495661B1 (en) | 2005-06-16 |
KR20040029535A (en) | 2004-04-08 |
US6921919B2 (en) | 2005-07-26 |
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