US20050088664A1 - Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface - Google Patents

Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface Download PDF

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Publication number
US20050088664A1
US20050088664A1 US10/692,863 US69286303A US2005088664A1 US 20050088664 A1 US20050088664 A1 US 20050088664A1 US 69286303 A US69286303 A US 69286303A US 2005088664 A1 US2005088664 A1 US 2005088664A1
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United States
Prior art keywords
measurement point
pattern
height
determining
local offset
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Abandoned
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US10/692,863
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English (en)
Inventor
Lars Stiblert
Peter Ekberg
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Micronic Laser Systems AB
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Micronic Laser Systems AB
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Publication date
Application filed by Micronic Laser Systems AB filed Critical Micronic Laser Systems AB
Priority to US10/692,863 priority Critical patent/US20050088664A1/en
Priority to US10/772,239 priority patent/US7148971B2/en
Assigned to MICRONIC LASER SYSTEMS AB reassignment MICRONIC LASER SYSTEMS AB ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: STIBLERT, LARS, EKBERG, PETER
Priority to PCT/SE2004/001270 priority patent/WO2005042258A1/en
Priority to EP04775375A priority patent/EP1677985A1/en
Priority to JP2006537925A priority patent/JP4202392B2/ja
Priority to CNB2004800310197A priority patent/CN100455445C/zh
Priority to KR1020067008019A priority patent/KR100808701B1/ko
Publication of US20050088664A1 publication Critical patent/US20050088664A1/en
Priority to JP2008201577A priority patent/JP4820392B2/ja
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/045—Correction of measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/20—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring contours or curvatures, e.g. determining profile
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams

Definitions

  • a method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface intended for use in exposure equipment and for measuring the physical properties of the surface.
  • the present invention relates to a method for writing a pattern on a surface, preferably on a glass plate made from quartz, for use in exposure equipment, as defined in claim 1 .
  • the invention also relates to a method for measuring the physical properties of the surface to determine the shape of the surface of a plate as defined in claim 10 .
  • an exposure system transfer an image from a glass plate, preferably made from high quality quarts, onto a rather large substrate, which may have a dimension up to 1100 mm times 1300 mm or even more.
  • the exposure system includes an aligner, or stepper, that emits light through the glass plate and onto the substrate, see FIG. 1 .
  • the glass plate is held in place by two rulers, or alternatively by a frame, and therefore the shape of the glass plate is deformed and the aligner, or stepper, compensates for this calculated deformation.
  • the front side of the glass plate that carries the pattern of the image is arranged on the rulers, and a perfect reproduced image by the system on a substrate is dependent on that the front side of the glass plate is absolutely flat.
  • TFT substrates may use two or more masks stitched together to cover a large exposure area.
  • a three-foot device In pattern generating systems for small plates, a three-foot device is used to support the plate during pattern generation and measurement, but the weight of a glass plate, with a thickness of 10 mm and a size of 1000 ⁇ 1000 mm, is approximately 40 kg, which will not be suitable to place on three pins.
  • An alternative solution is to use an air cushion for plate support, but this introduces other problems like determining the exact position of the plate during exposure of the pattern.
  • Another alternative is to handle the consequences that will arise when placing the plate directly on the stage (i.e. the support) of a pattern generating apparatus, although the plate will be deformed.
  • the object of the invention is to provide a method for writing a pattern on a glass plate that is independent of any physical deformations that will occur when writing the pattern.
  • a further object with the invention is to provide a method for measuring a glass plate being independent of any physical deformations that will occur when measuring the plate.
  • An advantage with the present invention is that unevenness in the support of the pattern generating apparatus (or measuring apparatus) will not introduce any error in the pattern or the measurement.
  • a further advantage is that any unevenness of the back surface and/or the front surface of the glass plate will not introduce any errors in the pattern or the measurement.
  • Still a further advantage with the present invention is that contamination in form of particles and/or air trapped between the plate and the support can be compensated for, and therefore will not introduce any error in the pattern or measurement.
  • Still another advantage is that it is possible to even correct the deformation that will occur in the exposure equipment together with the deformation generated during the pattern writing process, provided that information regarding deformation in the exposure equipment is known when manufacturing the plate, as is disclosed in the published international patent application WO 00/72090 by the same applicant.
  • FIG. 1 shows an exposure system according to prior art.
  • FIG. 2 shows a pattern generating apparatus according to prior art.
  • FIG. 3 illustrates the plate bending effect for calculating an offset according to the present invention.
  • FIGS. 4 a and 4 b illustrate the plate bending effect a glass plate with a flat top and a shaped bottom and the introduction of a reference surface when arranged on a flat support.
  • FIGS. 5 a and 5 b illustrate the plate bending effect a glass plate with a shaped top and a flat bottom and the introduction of a reference surface when arranged on a flat support.
  • FIGS. 6 a and 6 b illustrate the plate bending effect a glass plate with a flat top and a flat bottom and the introduction of a reference surface when arranged on a shaped support.
  • FIGS. 7 a and 7 b show measured x-y coordinates of a glass plate and compensated x-y coordinates of the same glass plate using the correction function
  • FIG. 7 c shows the difference between the measurements without compensation and the measurements with compensation.
  • FIG. 8 shows a three-dimensional measurement of a glass plate with particles distorting the shape of the plate.
  • FIGS. 9 a and 9 b show measured x-y coordinates of the glass plate illustrated in FIG. 8 , and the compensated x-y coordinates of the same glass plate using the correction function.
  • FIG. 1 shows an exposure system 10 which uses a glass plate 11 resting on two rulers 12 .
  • the weight of the glass plate will cause the glass plate 11 to bend when placed on the rulers 12 .
  • the deformation of the glass plate caused by the weight is easy to calculate and can be corrected for.
  • the glass plate 11 is provided with a pattern arranged on the downwards pointing surface 13 resting on the rulers 12 .
  • a light source 14 emits light 15 onto the glass plate 11 and the pattern arranged on the surface 13 of the glass plate 11 will produce a copy of the pattern on a substrate 16 .
  • the substrate 16 could be a TFT intended for a TV monitor. Normally, the pattern is transferred to the substrate 16 in a one-to-one relationship.
  • FIG. 1 Other necessary optics is not shown in FIG. 1 , since the purpose of the figure is to describe the function principals, rather than a complete exposure system.
  • FIG. 2 shows a pattern generating apparatus 20 , which also could be used as a measuring apparatus, including means to write a pattern 21 , e.g. mirrors directing a laser beam from a laser, and means 22 to measure the height H z between the apparatus 20 and a glass plate 11 with the surface 13 on which the pattern is to be written is placed upwards on a support 23 , so called stage.
  • the pattern writing means 21 may be translated over the entire surface of the stage, which movement may be implemented in a number of ways.
  • FIG. 2 illustrates one way where the stage is provided with means to move it in relation to the pattern writing means 21 in the x direction, and where the pattern writing means 21 is attached to a sliding support 24 arranged on a beam 25 to move the pattern writing means in the y direction.
  • the apparatus 20 is also provided with an angled foot plate 26 arranged a constant distance above the surface 13 of the glass plate 11 by means of an air cushion 27 .
  • the foot plate 26 and the pattern writing means 21 are attached to the sliding support 24 via a flexible attachment 28 , to allow the distance between the sliding support 24 and the pattern writing means/foot plate to vary dependent on the roughness of the surface 13 of the glass plate 11 .
  • the varying distance in the z direction i.e. the height H z , may be measured to calculate the roughness of the surface 13 in the z direction.
  • the size of the foot plate that is parallel to the surface 13 of the glass plate 11 has an opening for a laser beam from the pattern writing means 21 and is preferably rather large, e.g.
  • the air cushion beneath foot plate will act as an auto focus device for the pattern generating apparatus due to the constant distance between the foot plate and the glass plate.
  • the invention should however not be limited to this kind of pattern generating apparatus using an air cushion as an auto focus device, but other types of systems that will provide focus for the system could be used.
  • the essential part is that the apparatus 20 is provided with means to measure the height H z between the apparatus and the surface 13 of the glass plate 11 and thereby the variation in height when the pattern writing means 21 is moved in relationship to the stage 23 , and thus the surface 13 .
  • An essential part of the invention is to determine a reference surface against which the difference in height H z is calculated. This difference is denoted H, as is illustrated in connection with FIG. 3 .
  • the reference surface could have any desired shape as long as the shape of the reference surface is maintained unchanged.
  • the shape of the reference surface is a flat plane.
  • the “free” (non gravity) form i.e. the centre line of the plate as a reference surface, which is rather difficult to achieve in practise.
  • the bottom surface of the plate is not a good alternative for a reference surface since a stepper or an aligner use the top surface as a reference.
  • top surface would be used as a reference surface, there is an additional need to know the bottom shape of the plate and the shape of the support.
  • the shape of the support may be obtained, but it is very difficult to achieve knowledge of the bottom surface in practice.
  • the top surface may however be measured without the knowledge of the bottom surface.
  • a large glass plate that is placed on a three-foot will be deformed due to the weight of the plate, but a deformation function for a perfect plate may be calculated if the thickness of the plate, the material of the plate and the configuration of the three-foot are known.
  • a measurement of the non-perfect glass plate, when placed on the three-foot will generate a measurement of the deformed plate.
  • the shape of top surface is then calculated by subtraction the calculated deformation function for a perfect plate from the measurement of the deformed plate.
  • top surface of a glass plate is normally much more even, i.e. less variation in height in relation to the centre line, compared to the bottom surface, and the best compromise should therefore be to make the top surface of the plate to be the reference surface. It should however be noted that it is not evident that the top surface is the best choice due to the deformation of the glass plate during the following step in the exposure system, as shown in FIG. 1 . If the top surface 13 of the glass plate exhibits variations close to the position where it rests on the rulers 12 , the pattern on the surface 13 will be distorted in a vicinity of the rulers 12 .
  • FIG. 3 illustrates the plate bending effect for a glass plate 11 having a thickness T.
  • a reference surface 30 is determined, in this example the reference surface is flat, and the glass plate is divided into several measurement points 31 and the height H z is measured at each measurement point by the means 22 shown in FIG. 2 .
  • the height H between the reference plane 30 and the deformed surface 13 of the glass plane 11 can easily be calculated by subtracting the height of the reference surface 30 at the measurement point from the height H z measured for the surface 13 of the glass plate 11 by the apparatus 20 .
  • a local offset d (as a function of x and y) is thereafter calculated for each measurement point and depends on three variables: the thickness of the glass plate (T), the distance between adjacent measurement points (P) and the measured height (H) between the reference surface 30 and the surface 13 of the glass plate 11 .
  • the local offset should be interpreted as the position deviation from the position where a pattern should be written in relationship to the reference surface, as described in connection with FIGS. 4-6 .
  • the pitch P on the surface of the plate differs from the nominal pitch P nom on the reference surface.
  • the distance between adjacent measurement points should not exceed a predetermined distance, which is dependent on the required accuracy for the measurement to get a reasonable good result from the measurement.
  • An example of maximum distance between adjacent measurement points is 50 mm if the thickness of the glass plate 11 is around 10 mm and the glass plate material is quartz.
  • the distance between adjacent measurement points also vary dependent on the thickness of the glass plate to obtain the same measurement accuracy.
  • the variations in thickness of the glass plate is may be around 10-15 ⁇ m, but could be larger.
  • the measurement points could be randomly distributed across the surface 13 , but are preferably arranged in a grid structure with a predetermined distance between each point, i.e. pitch, that is not necessarily the same in the x and y direction.
  • the local offset is a function of the gradient in x and y direction at each measurement point and could be calculated using very simple expressions.
  • An angle ⁇ may be calculated from the measured height H provided the distance P between two adjacent measurement points 31 a is known.
  • FIG. 3 illustrates the bending effect in one dimension, but the local offset d is a 2-dimensional function of the derivative in each measurement point (dx and dy).
  • the distance between two adjacent points 31 is 40 mm
  • the thickness of the glass plate is 10 mm
  • the measured height H is 1 ⁇ m, which will result in a one-dimensional local offset d of 125 nm.
  • FIGS. 4 a and 4 b illustrate the plate bending effect a glass plate 41 with a flat top surface 43 and a shaped bottom surface 42 and the introduction of a reference surface 44 , which is flat in this example, when supported by a flat support 45 .
  • the shape of the top surface 43 is changed and the bottom surface 42 will generally follow the flat support 45 .
  • the result of this is that the pattern generated, illustrated by the dots 46 on the top surface, has to be expanded to obtain a correct reference surface.
  • FIGS. 5 a and 5 b illustrate the plate bending effect a glass plate 51 with a shaped top surface 53 and a flat bottom surface 52 and the introduction of a reference surface 44 , which is flat in this example, when arranged on a flat support 45 .
  • the shape of the top surface 43 is unchanged and the bottom surface 42 will follow the flat support 45 .
  • the pattern generated, illustrated by the dots 55 on the top surface has to be expanded to obtain a correct reference surface, since the top surface will be flattened out when positioned in the exposure equipment as described in FIG. 1 , at least in the vicinity of the rulers 12 .
  • the part of the glass plate positioned right between the rulers 12 will be deformed. Furthermore the rulers will deform the pattern on the glass plate unless the shape of the rulers 12 is in accordance with the shape of the reference surface.
  • FIGS. 6 a and 6 b illustrate the plate bending effect a glass plate 61 with a flat top surface 43 and a flat bottom surface 52 and the introduction of a reference surface 44 , which is flat in this example, when arranged on a shaped support 62 .
  • the shape of the top surface 43 is changed and the bottom surface 42 will generally follow the shaped support 62 .
  • the pattern generated, illustrated by the dots 64 on the top surface has to be expanded to obtain a correct reference surface, since the top surface will be flattened out when positioned in the exposure equipment as described in FIG. 1 .
  • FIGS. 4 a - 4 b , 5 a - 5 b and 6 a - 6 b illustrate extreme conditions and in reality all three variations are present during the process of writing a pattern on a glass plate.
  • FIG. 7 a shows measured x-y coordinates of a reference glass plate and compensated x-y coordinates of the same reference glass plate using a calculated correction function according to the present invention.
  • FIG. 7 b shows the measured height H (z correction data) obtained at the same time as the x and y coordinates for marks depicted on the surface of the reference glass plate.
  • FIG. 7 c shows the difference between the measurements without compensation and the measurements with compensation.
  • the size of the glass plate is in this example 800 ⁇ 800 mm, and the distance between each dashed line 70 in FIG. 7 a is 50 mm, and the scale of the deviation of the two plotted charts are 500 nm between each dashed line 70 .
  • the grey lines 71 correspond to the measured deviation of the x and y coordinate on the reference glass plate.
  • the black lines 72 correspond to the compensated x and y coordinates of the same reference glass plate using the Z correction effect based on the measured height H shown in FIG. 7 b .
  • the minimum height is ⁇ 20.705 ⁇ m and the maximum height is +16.664 ⁇ m compared to the determined reference surface and the height H is depicted as a function 73 .
  • the distance between the lines in x and y direction is the same as in FIG. 7 a , i.e. 50 mm, and the distance between the lines in z direction is 2 ⁇ m.
  • FIG. 7 c clearly illustrates the deviations between the two functions in FIG. 7 a .
  • the measured height H in FIG. 7 b With the deviation in FIG. 7 c it is easy to see the relationship between the derivative of the height and the local offset.
  • the derivative of the height is zero, as in position 74 , then the local offset d is zero.
  • the derivative of the height is high, as in position 75 , then the local offset d is large.
  • a transition from a low H value to high H value corresponds to that the glass plate has a “negative” bend, as illustrated in FIG. 3 , and vice versa.
  • the calculated local offset i.e. the difference between the grey and the black lines is largest when the change of the derivative of the height H in x and y direction is the highest.
  • FIG. 8 shows a three-dimensional measurement 80 of a glass plate with two present particles, placed between the plate and the support, having a height of 16 ⁇ m and 6 ⁇ m, respectively.
  • the measurement was performed using a grid structure and the distance between the measurement points was set to 50 mm and the thickness of the plate was 10 mm.
  • the scale in z direction was set to 2 ⁇ m per division. The presence of the large particle causes the x and y measurement illustrated in FIG. 9 a to deviate more than 500 nm.
  • FIG. 9 a shows measured x-y coordinates of the glass plate illustrated in FIG. 8
  • FIG. 9 b shows the compensated x-y coordinates of the same glass plate using the correction function calculated from the measured deviating height measurement in FIG. 8 .
  • the effect of particles will be greatly reduced on the final image generated on the glass plate as is illustrated in FIG. 9 b.
  • the pattern generating apparatus could of course include correction functions for any repeatable error, e.g. errors present in substrates for the manufacturing of TFT-arrays that are introduced in the substrates during the manufacture of the substrates, as well as repeatable errors introduced in the manufacturing process in the aligner, or stepper as previously mentioned.
  • any repeatable error e.g. errors present in substrates for the manufacturing of TFT-arrays that are introduced in the substrates during the manufacture of the substrates, as well as repeatable errors introduced in the manufacturing process in the aligner, or stepper as previously mentioned.
  • the method may naturally be implemented into a computer program for performing the measurements, and calculating the local offset for each measurement point.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
US10/692,863 2003-10-27 2003-10-27 Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface Abandoned US20050088664A1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US10/692,863 US20050088664A1 (en) 2003-10-27 2003-10-27 Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface
US10/772,239 US7148971B2 (en) 2003-10-27 2004-02-06 Apparatus for measuring the physical properties of a surface and a pattern generating apparatus for writing a pattern on a surface
PCT/SE2004/001270 WO2005042258A1 (en) 2003-10-27 2004-09-03 Pattern generating apparatus and an apparatus for measuring the physical properties of the surface
EP04775375A EP1677985A1 (en) 2003-10-27 2004-09-03 Pattern generating apparatus and an apparatus for measuring the physical properties of the surface
JP2006537925A JP4202392B2 (ja) 2003-10-27 2004-09-03 パターン生成装置及び表面の物理特性を測定するための装置
CNB2004800310197A CN100455445C (zh) 2003-10-27 2004-09-03 图案生成装置和用于测量表面物理特性的装置
KR1020067008019A KR100808701B1 (ko) 2003-10-27 2004-09-03 표면의 물리적 특성을 측정하기 위한 장치 및 그 패턴 생성장치
JP2008201577A JP4820392B2 (ja) 2003-10-27 2008-08-05 パターン生成装置及びパターン書き込み方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/692,863 US20050088664A1 (en) 2003-10-27 2003-10-27 Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface

Related Child Applications (1)

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US10/772,239 Continuation US7148971B2 (en) 2003-10-27 2004-02-06 Apparatus for measuring the physical properties of a surface and a pattern generating apparatus for writing a pattern on a surface

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US20050088664A1 true US20050088664A1 (en) 2005-04-28

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US10/692,863 Abandoned US20050088664A1 (en) 2003-10-27 2003-10-27 Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface
US10/772,239 Expired - Lifetime US7148971B2 (en) 2003-10-27 2004-02-06 Apparatus for measuring the physical properties of a surface and a pattern generating apparatus for writing a pattern on a surface

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US (2) US20050088664A1 (ja)
EP (1) EP1677985A1 (ja)
JP (2) JP4202392B2 (ja)
KR (1) KR100808701B1 (ja)
CN (1) CN100455445C (ja)
WO (1) WO2005042258A1 (ja)

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CN102037312B (zh) * 2008-05-22 2014-01-22 麦克罗尼克迈达塔有限责任公司 用于工件上先后形成的层之间的重叠补偿的方法和装置
JP5331638B2 (ja) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置
US20140055773A1 (en) * 2012-08-21 2014-02-27 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method and device for inspecting glass substrate of liquid crystal display
KR102253995B1 (ko) 2013-03-12 2021-05-18 마이크로닉 아베 기계적으로 생성된 정렬 표식 방법 및 정렬 시스템
WO2014140047A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
CN106933047B (zh) * 2015-12-30 2018-08-14 上海微电子装备（集团）股份有限公司 一种曝光方法
CN107367911B (zh) * 2016-05-11 2019-02-15 中芯国际集成电路制造(上海)有限公司 对准方法及对准系统

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WO2005042258A1 (en) 2005-05-12
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JP2007512551A (ja) 2007-05-17
EP1677985A1 (en) 2006-07-12
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