US20030122525A1 - Power switch for battery protection - Google Patents
Power switch for battery protection Download PDFInfo
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- US20030122525A1 US20030122525A1 US10/017,601 US1760101A US2003122525A1 US 20030122525 A1 US20030122525 A1 US 20030122525A1 US 1760101 A US1760101 A US 1760101A US 2003122525 A1 US2003122525 A1 US 2003122525A1
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- Prior art keywords
- fet
- battery
- bulk
- fet switch
- coupled
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/0031—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/00302—Overcharge protection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/00306—Overdischarge protection
Definitions
- the invention relates to a circuit for protecting a battery, and more particularly, to a circuit for controlling the charging, discharging, and protection of a rechargeable battery.
- Rechargeable batteries are used in a variety of applications of portable electronic devices.
- rechargeable batteries are used for portable phones.
- Several types of batteries are used in the art, most notably those comprising lithium ion or Li + .
- the battery must be protected from excessive charging voltage during recharging and from over discharging while supplying the appliance.
- a rechargeable battery 10 is configured such that it can source energy to a load 34 or can be recharged by a charger source 38 .
- Two MOSFET switches N 1 18 and N 2 26 are used to control the flow of current into (charging) and out of (discharging) the battery.
- the control circuit 14 controls the ON and OFF state of the switches 18 and 26 .
- the switches comprise discrete devices.
- Each switch 18 and 26 contains a parasitic bulk-to-drain diode D 1 22 and D 2 30 . By coupling each switch in an opposite manner, each of the parasitic diodes 22 and 30 conducts current in a different direction.
- both of the switches are ON. However, if the control circuit 14 detects an over charging voltage from VBATT to GND, then the control circuit turns OFF the switch N 1 . Since the parasitic diode D 1 22 also blocks current flow into the battery, the battery stops charging. In the case of an over discharging condition, the control circuit 14 would detect a too low battery voltage from VBATT to GND. The other switch N 2 26 would be turned OFF. In this case, the parasitic diode D 2 30 blocks current flow out of the battery 10 .
- the prior art circuit has at least two disadvantages. First, two FET switches are required in order to obtain two-directional switching capability. Therefore, the series resistance of the battery pack is increased. Second, the use of discrete components increases the manufacturing cost and space requirements for the protection circuit.
- U.S. Pat. No. 6,246,214 to Oglesbee shows a battery protection circuit having only one MOSFET switch. A voltage protection circuit is used to limit the voltage so that a single MOSFET can be used for two directional current control.
- U.S. Pat. No. 5,063,471 to Park discloses a battery protection circuit.
- U.S. Pat. No. 5,789,900 to Hasegawa et al discloses a battery protection circuit showing two MOSFETs having back-to-back diodes.
- U.S. Pat. No. 6,160,381 to Peterzell discloses a battery pack protection circuit. Two MOS switches are used.
- a principal object of the present invention is to provide an effective and very manufacturable circuit for protecting a battery.
- a further object of the present invention is to provide a battery protection circuit for controlling charging and discharging of a battery.
- a still further object of the present invention is to control both charging and discharging via a single FET having a switchable bulk connection.
- Another still further object of the present invention is to cascade switchable bulk FET devices to increase the voltage range of the circuit.
- Yet another still further object of the present invention is to charge the middle node between cascaded FET devices to improve performance.
- Another still further object of the present invention is to form the switchable bulk FET devices using either NMOS or PMOS devices.
- a battery charging, discharging, and protection circuit comprises, first, a FET switch having gate, source, drain, and bulk.
- the FET switch may comprise either a NMOS device or a PMOS device.
- the source is coupled to a load terminal, and the drain is coupled to a battery terminal.
- a means of controlling the FET switch gate and the bulk is included.
- the FET switch gate voltage determines the OFF and ON state of said FET switch.
- the FET bulk is switchably coupled between the battery terminal and the load terminal.
- a battery charging, discharging, and protection circuit is achieved.
- the circuit comprises, first, a first FET switch having gate, source, drain, and bulk.
- the drain is coupled to a battery terminal.
- a second FET switch having gate, source, drain, and bulk is used.
- the drain is coupled to the first NMOS FET switch source to thereby form a mid node.
- the source is coupled to a load terminal.
- a means of controlling the first and second FET gates and the switchable bulks is used.
- the first and second FET switch gates voltages determine the OFF and ON states of the first and second FET switches.
- the first FET bulk is switchably coupled between the battery terminal and the mid node.
- the second FET bulk is switchably coupled between the mid node and the load terminal.
- FIG. 1 illustrates a prior art battery protection circuit.
- FIG. 2 illustrates a first preferred embodiment of the battery protection circuit of the present invention where the FET switch is NMOS.
- FIG. 3 illustrates a second preferred embodiment of the battery protection circuit of the present invention where two NMOS switches are used for greater operating range.
- FIG. 4 illustrates a third preferred embodiment of the present invention where a voltage divider is added to bias the mid node.
- FIG. 5 illustrates an exemplary application of the present invention.
- FIG. 6 illustrates the first preferred embodiment using a PMOS FET switch.
- FIG. 7 illustrates the second preferred embodiment using two PMOS FET switches.
- the preferred embodiments disclose a novel circuit for protecting a battery.
- the circuit uses a novel, single FET device having a switchable bulk connection to achieve control of both charging and discharging current. Additional switchable bulk FET devices may be cascaded to increase the operating range of the circuit. It should be clear to those experienced in the art that the present invention can be applied and extended without deviating from the scope of the present invention.
- a battery 70 preferably comprises a rechargeable battery.
- the circuit is configured to allow the battery 70 to source current to a load 88 or to be recharged by a charging source 90 .
- the battery 70 preferably comprises a two-terminal device. In the illustration, the positive terminal is labeled VBATT 92 . The negative terminal is labeled GND 96 .
- the battery protection circuit comprises, first, a FET switch N 1 78 .
- a FET switch N 1 78 In this version of the first preferred embodiment, a single FET switch and, more preferably, a NMOS FET switch 78 is used.
- An alternative version, showing a PMOS FET switch is shown as FIG. 6.
- the FET switch N 1 78 is preferably fabricated in a standard MOS process such that the control circuit 74 and the switch N 1 78 can be fabricated on the same substrate.
- the NMOS FET N 1 78 must be fabricated in a well (p-type) that can be isolated from the semiconductor substrate. In this way, the well, or bulk, of the device can be biased independently of the substrate.
- the NMOS FET switch N 1 78 has gate, drain, source, and bulk connections.
- the source is coupled to the external load terminal GNDOUT 94 that is further coupled to an external device, such as a portable phone circuit or a charging source 90 .
- the drain is coupled to the negative battery terminal GND 96 .
- the gate is coupled to the control circuit 74 .
- the control circuit 74 monitors the battery 70 voltage, from VBATT 92 to GND 96 , to protect the battery from over charging and from over discharging.
- a most important feature of the present invention is the configuration of the bulk connection of the NMOS FET N 1 78 .
- the bulk is not coupled to either the source or the drain as in the prior art. Further, the bulk is not coupled to any fixed voltage level. Rather, a switchable bulk is used. In particular, the bulk is switchable between the negative battery terminal 96 and the load terminal GNDOUT 94 .
- a first switch SW 1 82 allows the bulk to be coupled to or de-coupled from the negative battery terminal 96 .
- a second switch SW 2 86 allows the bulk to be coupled to or de-coupled from the load terminal GNDOUT 94 .
- the NMOS FET switch N 1 78 is turned ON by the control circuit 74 .
- the bulk is coupled to the load terminal GNDOUT 94 by closing SW 2 86 and opening SW 1 82 .
- the gate drive of the control circuit can create a minimum ON resistance for NMOS switch N 1 .
- the charging source 90 can then source current into the battery to fully recharge it.
- the control circuit 74 turns OFF the NMOS FET switch N 1 78 to stop charging current flow. Because the bulk is coupled to GNDOUT 94 , a reverse biased p-n diode formed by the bulk and the drain prevents charging current flow from the negative battery terminal 96 to GNDOUT 94 .
- the NMOS FET switch N 1 78 is turned ON by the control circuit 74 .
- the bulk is coupled to the negative battery terminal GND 96 by closing the switch SW 1 82 while opening the switch SW 2 86 .
- Discharging current flows through N 1 78 from GNDOUT 94 to GND 96 . If an over discharge occurs, the battery voltage will drop below a pre-determined value.
- the NMOS FET switch N 1 78 is turned OFF by the control circuit 74 . However, the bulk remains coupled to the negative terminal GND 96 .
- the bulk-to-source diode is reverse biased and blocks any forward current flow.
- the battery may be charging during an over discharge state.
- the over discharge state the battery has been excessively discharged during a previous operation.
- the charging current should be limited to protect the battery. Therefore, the gate of N 1 78 is coupled to the drain node GND 96 such that the device operates as a MOS diode.
- the second condition the battery may be discharging in an overcharged stated. In this state, the battery has been overcharged.
- the current should again be limited to protect the battery. Therefore, the gate of N 1 78 is coupled to the source node GNDOUT 94 such that the device again operates as a MOS diode, in this case for forward current.
- a PMOS FET is used for the switch P 1 408 .
- the NMOS transistor provides much lower ON resistance and is, therefore, the logical choice for a drive switch.
- the present invention is easily extendable to use a PMOS FET as the switch.
- the PMOS FET switch 408 has source coupled to the load terminal LOAD 428 and drain coupled to the positive battery terminal VBATT 420 .
- the gate is controlled by the control circuit 404 .
- the bulk is again switchable.
- the bulk is switched between the positive battery terminal 420 and LOAD 428 by switches SW 1 412 and SW 2 416 , respectively.
- the bulk of the PMOS device must be a well (n-type) that can be biased independently of the substrate.
- the operating table for the single PMOS FET version is shown as Table 2 below and operates as the NMOS FET version operates. TABLE 2 Operating Conditions for Single PMOS FET Circuit. Operating Condition FET Condition Bulk Coupling Charging ON SW2 ON Over Charging OFF SW2 ON Charging in Over MOS Diode SW2 ON Discharge State Discharging ON SW1 ON Over Discharging OFF SW1 ON Discharging in Over MOS Diode SW1 ON Charge State
- the PMOS FET switch P 1 408 is ON while the bulk is biased to the output LOAD 428 by turning ON SW 2 416 and turning OFF SW 1 412 . This enables the switch P 1 408 to exhibit minimum ON resistance while not turning on the bulk-to-drain diode and risking latchup. If an over charging is detected, the PMOS FET is turned OFF while the bulk remains at LOAD. The current is thereby blocked by both the switching channel and the reverse biased p-n diode.
- P 1 408 is ON while the bulk is biased to the positive battery terminal 420 by turning ON SW 1 412 and turning OFF SW 2 416 . Again, this minimizes the ON resistance.
- P 1 is turned OFF and the bulk is left at VBATT to insure no forward current. The charging during over discharge condition and the discharging during over charge conditions operate the same as for the NMOS case.
- FIG. 3 a second preferred embodiment of the present invention is illustrated.
- two NMOS FET switches N 1 108 and N 2 120 are used.
- N 1 and N 2 are cascaded to provide a combined switch having a larger operating voltage range than is available with a single switch.
- the battery charging source 136 is capable of generating a larger voltage than the battery 100 .
- the voltage range of the switch is limited by the drain-to-bulk reverse breakdown as given be the manufacturing process. This breakdown voltage may be about 7 Volts, for example. This means that the charger 90 design must be limited to not generate a voltage greater than the battery 70 voltage plus about 7 Volts.
- the use of the cascaded NMOS FET devices N 1 108 and N 2 120 increases the operating range of the combined switch such that a voltage difference of, for example, about 14 Volts can be sustained in the OFF state.
- the first FET switch N 1 has gate, source, drain, and bulk. The drain is coupled to the negative battery terminal, GND 148 .
- the bulk is switchably coupled between the negative battery terminal GND 148 and a middle node MID 142 between the cascaded FET devices N 1 108 and N 2 120 .
- the second FET switch N 2 120 has gate, source, drain, and bulk. The drain is coupled to the first FET switch N 1 drain at the mid node MID 142 .
- the source is coupled to the load terminal node GNDOUT 144 .
- the bulk of N 2 120 is switchably coupled between MID 142 and the load terminal GNDOUT 144 .
- the control circuit CONTROL 104 drives the gates of N 1 108 and N 2 120 and the bulk switches SW 1 112 , SW 2 116 , SW 3 124 , and SW 4 128 .
- Table 3 The operating table for the second embodiment using cascaded NMOS FET switches is shown as Table 3 below. TABLE 3 Operating modes for Cascaded NMOS Circuit.
- the operating concept of the single NMOS FET is extended to create the cascaded switch.
- both of the transistors N 1 and N 2 are ON.
- the bulk of N 1 108 is coupled to the MID node 142 by turning ON SW 2 116 .
- the bulk of N 2 120 is coupled to the load terminal GNDOUT 144 by turning ON SW 4 128 .
- the control circuit 104 turns OFF both switches N 1 and N 2 to interrupt current flow.
- the configuration of the bulks presents a series of reversed biased p-n junctions between the negative battery terminal GND 148 and the load terminal GNDOUT to thereby block charging current.
- the use of two NMOS devices allows the voltage difference between GND 148 and GNDOUT 144 to drop across two bulk-to-drain diodes and thereby increases the operating range when compared to a single transistor approach.
- control circuit 104 turns OFF N 2 120 .
- the bulk of N 1 108 is coupled to GND 148 by SW 1 112 and the bulk of N 2 120 is coupled to MID 142 by SW 3 124 .
- the cascaded circuit works in a similar mode as the single FET circuit. Note that the first transistor N 1 108 is held ON for both cases. However, the second transistor N 2 120 is biased to the MOS diode case to protect the battery as in the single FET circuit.
- FIG. 7 a PMOS version of the second embodiment cascade circuit is shown.
- the PMOS version two PMOS FET switches P 1 508 and P 2 520 are connected is series.
- the bulk for the first PMOS FET P 1 508 is switched between the positive battery terminal VBATT 532 and the MID node 534 .
- the bulk of the second PMOS FET P 2 520 is switched between the MID node 534 and the load terminal LOAD 540 .
- the operating table for the PMOS version of the cascaded circuit is shown below in Table 4 and is the same as that for the cascaded NMOS version. TABLE 4 Operating modes for Cascaded PMOS Circuit.
- both P 1 508 and P 2 520 are ON.
- the bulk of P 1 is coupled to MID 534 while the bulk of P 2 520 is coupled to LOAD 540 to minimize the ON resistance of the switches.
- both P 1 and P 2 are turned OFF by the control circuit 504 .
- the bulk of P 1 remains at MID while the bulk of P 2 remains at LOAD.
- P 1 and P 2 are ON.
- the bulk of P 1 is biased to VBATT while the bulk of P 2 is biased to MID to reduce ON resistance.
- P 2 is turned OFF.
- the bulk of P 1 is kept at VBATT 532 while the bulk of P 2 is kept at MID 534 .
- the cascaded switching configuration of the second embodiment may be extended to three or more switches if needed to create adequate operating voltage.
- a problem that the may occur with the cascaded switch configuration is the floating of the MID node when both of the FET switches are OFF.
- the bulk of N 1 is coupled to MID 142 and the bulk of N 2 is coupled to GNDOUT 144 .
- the bulk-drain p-n diodes are reverse biased, the bulk of N 1 , which is coupled to MID, is actually floating.
- a non-uniform voltage distribution between the two bulk-drain diodes may exist and could cause one of the diodes to conduct.
- a voltage divider Z 1 232 and Z 2 236 between the positive battery terminal VBATT 248 and the load terminal GNDOUT 252 .
- the purpose of the voltage divider is to provide a means of insuring that the voltage difference is evenly split between each bulk-drain diode so that the full operating range is achieved without turning on the parasitic vertical npn.
- the voltage divider Z 1 232 and Z 2 236 may comprise, for example, two resistors of equal value.
- the addition of the voltage divider to steer the bulk potentials may also be added to the PMOS version of the cascaded switch circuit shown in FIG. 7.
- switches SW 5 and SW 6 are added to allow the biasing voltage to be switched ON and OFF as needed.
- the operating table for third embodiment including the voltage divider is shown as Table 5 below. The voltage divider is only coupled to the MID node when the circuit is in the charging mode. Note that the same operating table applies to both NMOS and PMOS versions. TABLE 5 Operating modes for Cascaded Circuit including Voltage Divider.
- FIG. 5 a block level diagram of an application of the present invention is shown.
- a battery control and protection circuit 300 for a rechargeable battery is shown.
- the circuit 300 may comprise a single monolithic IC or a combination of IC chips and discrete components. Circuits are included to detect over voltage and current conditions.
- the logic block 320 uses these inputs to control the FET block 310 which comprises either a single FET or cascaded FET devices as disclosed in the present invention.
- the present invention provides an effective and very manufacturable circuit for protecting a battery.
- the battery protection circuit controls charging and discharging of a battery. Both charging and discharging is controlled via a single FET having a switchable bulk connection.
- Switchable bulk FET devices may be cascaded to increase the voltage range of the circuit.
- the switchable bulk FET devices may comprise either NMOS or PMOS devices.
- the middle node between cascaded FET devices is steered to a known voltage during over charging to further improve performance.
- the novel circuit provides an effective and manufacturable alternative to the prior art.
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Abstract
Description
- (1) Field of the Invention
- The invention relates to a circuit for protecting a battery, and more particularly, to a circuit for controlling the charging, discharging, and protection of a rechargeable battery.
- (2) Description of the Prior Art
- Rechargeable batteries are used in a variety of applications of portable electronic devices. In particular, rechargeable batteries are used for portable phones. Several types of batteries are used in the art, most notably those comprising lithium ion or Li+. For optimum battery life and performance, the battery must be protected from excessive charging voltage during recharging and from over discharging while supplying the appliance.
- Referring now to FIG. 1, an exemplary prior art battery protection circuit. A
rechargeable battery 10 is configured such that it can source energy to aload 34 or can be recharged by acharger source 38. Two MOSFET switches N1 18 andN2 26 are used to control the flow of current into (charging) and out of (discharging) the battery. Thecontrol circuit 14 controls the ON and OFF state of theswitches 18 and 26. Typically, the switches comprise discrete devices. Eachswitch 18 and 26 contains a parasitic bulk-to-drain diode D1 22 andD2 30. By coupling each switch in an opposite manner, each of theparasitic diodes - During normal charging or discharging of the
battery 10, both of the switches are ON. However, if thecontrol circuit 14 detects an over charging voltage from VBATT to GND, then the control circuit turns OFF the switch N1. Since theparasitic diode D1 22 also blocks current flow into the battery, the battery stops charging. In the case of an over discharging condition, thecontrol circuit 14 would detect a too low battery voltage from VBATT to GND. Theother switch N2 26 would be turned OFF. In this case, theparasitic diode D2 30 blocks current flow out of thebattery 10. - The prior art circuit has at least two disadvantages. First, two FET switches are required in order to obtain two-directional switching capability. Therefore, the series resistance of the battery pack is increased. Second, the use of discrete components increases the manufacturing cost and space requirements for the protection circuit.
- Several prior art inventions describe battery protection circuits and devices related to bulk switching. U.S. Pat. No. 6,246,214 to Oglesbee shows a battery protection circuit having only one MOSFET switch. A voltage protection circuit is used to limit the voltage so that a single MOSFET can be used for two directional current control. U.S. Pat. No. 5,063,471 to Park discloses a battery protection circuit. U.S. Pat. No. 5,789,900 to Hasegawa et al discloses a battery protection circuit showing two MOSFETs having back-to-back diodes. U.S. Pat. No. 6,160,381 to Peterzell discloses a battery pack protection circuit. Two MOS switches are used. U.S. Pat. No. 5,081,371 to Wong describes a charge pump circuit where back gate biased MOSFETs are used. U.S. Pat. No. 5,933,046 to Ramet et al teaches an analog switch formed from a MOSFET that has a switchable bulk connection.
- A principal object of the present invention is to provide an effective and very manufacturable circuit for protecting a battery.
- A further object of the present invention is to provide a battery protection circuit for controlling charging and discharging of a battery.
- A still further object of the present invention is to control both charging and discharging via a single FET having a switchable bulk connection.
- Another still further object of the present invention is to cascade switchable bulk FET devices to increase the voltage range of the circuit.
- Yet another still further object of the present invention is to charge the middle node between cascaded FET devices to improve performance.
- Another still further object of the present invention is to form the switchable bulk FET devices using either NMOS or PMOS devices.
- In accordance with the objects of this invention, a battery charging, discharging, and protection circuit is achieved. The circuit comprises, first, a FET switch having gate, source, drain, and bulk. The FET switch may comprise either a NMOS device or a PMOS device. The source is coupled to a load terminal, and the drain is coupled to a battery terminal. Second, a means of controlling the FET switch gate and the bulk is included. The FET switch gate voltage determines the OFF and ON state of said FET switch. The FET bulk is switchably coupled between the battery terminal and the load terminal.
- Also in accordance with the objects of the present invention, a battery charging, discharging, and protection circuit is achieved. The circuit comprises, first, a first FET switch having gate, source, drain, and bulk. The drain is coupled to a battery terminal. Second, a second FET switch having gate, source, drain, and bulk is used. The drain is coupled to the first NMOS FET switch source to thereby form a mid node. The source is coupled to a load terminal. Finally, a means of controlling the first and second FET gates and the switchable bulks is used. The first and second FET switch gates voltages determine the OFF and ON states of the first and second FET switches. The first FET bulk is switchably coupled between the battery terminal and the mid node. The second FET bulk is switchably coupled between the mid node and the load terminal.
- In the accompanying drawings forming a material part of this description, there is shown:
- FIG. 1 illustrates a prior art battery protection circuit.
- FIG. 2 illustrates a first preferred embodiment of the battery protection circuit of the present invention where the FET switch is NMOS.
- FIG. 3 illustrates a second preferred embodiment of the battery protection circuit of the present invention where two NMOS switches are used for greater operating range.
- FIG. 4 illustrates a third preferred embodiment of the present invention where a voltage divider is added to bias the mid node.
- FIG. 5 illustrates an exemplary application of the present invention.
- FIG. 6 illustrates the first preferred embodiment using a PMOS FET switch.
- FIG. 7 illustrates the second preferred embodiment using two PMOS FET switches.
- The preferred embodiments disclose a novel circuit for protecting a battery. The circuit uses a novel, single FET device having a switchable bulk connection to achieve control of both charging and discharging current. Additional switchable bulk FET devices may be cascaded to increase the operating range of the circuit. It should be clear to those experienced in the art that the present invention can be applied and extended without deviating from the scope of the present invention.
- Referring now to FIG. 2, the first preferred embodiment of the battery protection circuit of the present invention is illustrated. Several important features of the present invention are shown. A
battery 70 preferably comprises a rechargeable battery. The circuit is configured to allow thebattery 70 to source current to aload 88 or to be recharged by a chargingsource 90. Thebattery 70 preferably comprises a two-terminal device. In the illustration, the positive terminal is labeledVBATT 92. The negative terminal is labeledGND 96. - The battery protection circuit comprises, first, a
FET switch N1 78. In this version of the first preferred embodiment, a single FET switch and, more preferably, aNMOS FET switch 78 is used. An alternative version, showing a PMOS FET switch is shown as FIG. 6. Referring again to FIG. 2, theFET switch N1 78 is preferably fabricated in a standard MOS process such that thecontrol circuit 74 and theswitch N1 78 can be fabricated on the same substrate. As a particularly important feature, theNMOS FET N1 78 must be fabricated in a well (p-type) that can be isolated from the semiconductor substrate. In this way, the well, or bulk, of the device can be biased independently of the substrate. The NMOSFET switch N1 78 has gate, drain, source, and bulk connections. The source is coupled to the externalload terminal GNDOUT 94 that is further coupled to an external device, such as a portable phone circuit or a chargingsource 90. The drain is coupled to the negativebattery terminal GND 96. The gate is coupled to thecontrol circuit 74. Thecontrol circuit 74 monitors thebattery 70 voltage, fromVBATT 92 toGND 96, to protect the battery from over charging and from over discharging. - A most important feature of the present invention is the configuration of the bulk connection of the
NMOS FET N1 78. Note that the bulk is not coupled to either the source or the drain as in the prior art. Further, the bulk is not coupled to any fixed voltage level. Rather, a switchable bulk is used. In particular, the bulk is switchable between thenegative battery terminal 96 and theload terminal GNDOUT 94. Afirst switch SW1 82 allows the bulk to be coupled to or de-coupled from thenegative battery terminal 96. Asecond switch SW2 86 allows the bulk to be coupled to or de-coupled from theload terminal GNDOUT 94. - These key structural features of the present invention are used to allow a single NMOS
FET switch N1 78 to perform the function of the two switches in the prior art. The operating table for the circuit is given in Table 1 below.TABLE 1 Operating Conditions for Single NMOS FET Circuit. Operating Condition FET Condition Bulk Coupling Charging ON SW2 ON Over Charging OFF SW2 ON Charging in Over MOS Diode SW2 ON Discharge State Discharging ON SW1 ON Over Discharging OFF SW1 ON Discharging in Over MOS Diode SW1 ON Charge State - During a normal charging event, the NMOS
FET switch N1 78 is turned ON by thecontrol circuit 74. The bulk is coupled to theload terminal GNDOUT 94 by closingSW2 86 andopening SW1 82. With the bulk biased to GNDOUT, the gate drive of the control circuit can create a minimum ON resistance for NMOS switch N1. The chargingsource 90 can then source current into the battery to fully recharge it. However, if an over charging condition is detected, wherein the battery voltage rises above a pre-determined set point, then thecontrol circuit 74 turns OFF the NMOSFET switch N1 78 to stop charging current flow. Because the bulk is coupled to GNDOUT 94, a reverse biased p-n diode formed by the bulk and the drain prevents charging current flow from thenegative battery terminal 96 to GNDOUT 94. - In the normal discharging case, the NMOS
FET switch N1 78 is turned ON by thecontrol circuit 74. In this case, the bulk is coupled to the negativebattery terminal GND 96 by closing theswitch SW1 82 while opening theswitch SW2 86. Discharging current flows throughN1 78 fromGNDOUT 94 toGND 96. If an over discharge occurs, the battery voltage will drop below a pre-determined value. During an over-discharge, the NMOSFET switch N1 78 is turned OFF by thecontrol circuit 74. However, the bulk remains coupled to thenegative terminal GND 96. The bulk-to-source diode is reverse biased and blocks any forward current flow. - Two other error conditions may occur. First, the battery may be charging during an over discharge state. In the over discharge state, the battery has been excessively discharged during a previous operation. During the subsequent charging, the charging current should be limited to protect the battery. Therefore, the gate of
N1 78 is coupled to thedrain node GND 96 such that the device operates as a MOS diode. In the second condition, the battery may be discharging in an overcharged stated. In this state, the battery has been overcharged. During the subsequent discharging, the current should again be limited to protect the battery. Therefore, the gate ofN1 78 is coupled to thesource node GNDOUT 94 such that the device again operates as a MOS diode, in this case for forward current. - Referring now to FIG. 6, an alternative to the first preferred embodiment of the present invention is shown. In this embodiment, a PMOS FET is used for the
switch P1 408. In many processes, the NMOS transistor provides much lower ON resistance and is, therefore, the logical choice for a drive switch. However, if a suitable PMOS FET is available, the present invention is easily extendable to use a PMOS FET as the switch. In this case, thePMOS FET switch 408 has source coupled to theload terminal LOAD 428 and drain coupled to the positivebattery terminal VBATT 420. The gate is controlled by thecontrol circuit 404. The bulk is again switchable. In this case, however, the bulk is switched between thepositive battery terminal 420 andLOAD 428 by switches SW1 412 andSW2 416, respectively. Once again, the bulk of the PMOS device must be a well (n-type) that can be biased independently of the substrate. The operating table for the single PMOS FET version is shown as Table 2 below and operates as the NMOS FET version operates.TABLE 2 Operating Conditions for Single PMOS FET Circuit. Operating Condition FET Condition Bulk Coupling Charging ON SW2 ON Over Charging OFF SW2 ON Charging in Over MOS Diode SW2 ON Discharge State Discharging ON SW1 ON Over Discharging OFF SW1 ON Discharging in Over MOS Diode SW1 ON Charge State - During a normal charging, the PMOS
FET switch P1 408 is ON while the bulk is biased to theoutput LOAD 428 by turningON SW2 416 and turningOFF SW1 412. This enables theswitch P1 408 to exhibit minimum ON resistance while not turning on the bulk-to-drain diode and risking latchup. If an over charging is detected, the PMOS FET is turned OFF while the bulk remains at LOAD. The current is thereby blocked by both the switching channel and the reverse biased p-n diode. During a normal discharge,P1 408 is ON while the bulk is biased to thepositive battery terminal 420 by turningON SW1 412 and turningOFF SW2 416. Again, this minimizes the ON resistance. During an over discharge, P1 is turned OFF and the bulk is left at VBATT to insure no forward current. The charging during over discharge condition and the discharging during over charge conditions operate the same as for the NMOS case. - Referring now to FIG. 3, a second preferred embodiment of the present invention is illustrated. In this embodiment, two NMOS FET switches
N1 108 andN2 120 are used. N1 and N2 are cascaded to provide a combined switch having a larger operating voltage range than is available with a single switch. By nature, thebattery charging source 136 is capable of generating a larger voltage than thebattery 100. When an over charge condition is detected, and the single FET switch is turned OFF, the voltage difference between thecharger 90 and thebattery 70 must be sustained across the switch. Even with the novel switched bulk structure, the voltage range of the switch is limited by the drain-to-bulk reverse breakdown as given be the manufacturing process. This breakdown voltage may be about 7 Volts, for example. This means that thecharger 90 design must be limited to not generate a voltage greater than thebattery 70 voltage plus about 7 Volts. - Referring again to FIG. 3, the use of the cascaded NMOS
FET devices N1 108 andN2 120 increases the operating range of the combined switch such that a voltage difference of, for example, about 14 Volts can be sustained in the OFF state. The first FET switch N1 has gate, source, drain, and bulk. The drain is coupled to the negative battery terminal,GND 148. The bulk is switchably coupled between the negativebattery terminal GND 148 and a middle node MID 142 between the cascadedFET devices N1 108 andN2 120. The secondFET switch N2 120 has gate, source, drain, and bulk. The drain is coupled to the first FET switch N1 drain at the mid node MID 142. The source is coupled to the load terminal node GNDOUT 144. The bulk ofN2 120 is switchably coupled between MID 142 and the load terminal GNDOUT 144. The control circuit CONTROL 104 drives the gates ofN1 108 andN2 120 and the bulk switchesSW1 112, SW2 116,SW3 124, and SW4 128. The operating table for the second embodiment using cascaded NMOS FET switches is shown as Table 3 below.TABLE 3 Operating modes for Cascaded NMOS Circuit. Mode N1 BULK N1 N2 BULK N2 Charging ON SW2 ON ON SW4 ON Over Charging OFF SW2 ON OFF SW4 ON Charging in Over ON SW2 ON MOS SW4 ON Discharged State DIODE Discharging ON SW1 ON ON SW3 ON Over Discharging ON SW1 ON OFF SW3 ON Discharging in ON SW1 ON MOS SW3 ON Over Charged State DIODE - The operating concept of the single NMOS FET is extended to create the cascaded switch. When the circuit is in the charging or discharging mode, both of the transistors N1 and N2 are ON. The bulk of
N1 108 is coupled to the MID node 142 by turning ON SW2 116. The bulk ofN2 120 is coupled to the load terminal GNDOUT 144 by turning ON SW4 128. If an over charging condition is detected, the control circuit 104 turns OFF both switches N1 and N2 to interrupt current flow. The configuration of the bulks presents a series of reversed biased p-n junctions between the negativebattery terminal GND 148 and the load terminal GNDOUT to thereby block charging current. The use of two NMOS devices allows the voltage difference betweenGND 148 and GNDOUT 144 to drop across two bulk-to-drain diodes and thereby increases the operating range when compared to a single transistor approach. - If an over discharge event is detected, the control circuit104 turns
OFF N2 120. In this case, however the bulk ofN1 108 is coupled toGND 148 bySW1 112 and the bulk ofN2 120 is coupled to MID 142 bySW3 124. This creates a series of reverse biased p-n diodes from the GNDOUT 144 toGND 148. Discharging current flow is thereby stopped by the channel of N2 and the reverse-biased diodes. - In the charging an over discharged battery case and in the discharging the over charged battery case, the cascaded circuit works in a similar mode as the single FET circuit. Note that the
first transistor N1 108 is held ON for both cases. However, thesecond transistor N2 120 is biased to the MOS diode case to protect the battery as in the single FET circuit. - Referring now to FIG. 7, a PMOS version of the second embodiment cascade circuit is shown. In the PMOS version, two PMOS FET switches
P1 508 andP2 520 are connected is series. The bulk for the firstPMOS FET P1 508 is switched between the positivebattery terminal VBATT 532 and theMID node 534. The bulk of the secondPMOS FET P2 520 is switched between theMID node 534 and theload terminal LOAD 540. The operating table for the PMOS version of the cascaded circuit is shown below in Table 4 and is the same as that for the cascaded NMOS version.TABLE 4 Operating modes for Cascaded PMOS Circuit. Mode N1 BULK N1 N2 BULK N2 Charging ON SW2 ON ON SW4 ON Over Charging OFF SW2 ON OFF SW4 ON Charging in Over ON SW2 ON MOS SW4 ON Discharged State DIODE Discharging ON SW1 ON ON SW3 ON Over Discharging ON SW1 ON OFF SW3 ON Discharging in Over ON SW1 ON MOS SW3 ON Charged State DIODE - During normal charging mode, both
P1 508 andP2 520 are ON. The bulk of P1 is coupled toMID 534 while the bulk of P2 520 is coupled to LOAD 540 to minimize the ON resistance of the switches. If an over charge is detected, both P1 and P2 are turned OFF by thecontrol circuit 504. The bulk of P1 remains at MID while the bulk of P2 remains at LOAD. This creates a series of reverse biased p-n diodes betweenVBATT 532 and thehigh voltage LOAD 540 to block current flow into thebattery 500. During discharging, P1 and P2 are ON. The bulk of P1 is biased to VBATT while the bulk of P2 is biased to MID to reduce ON resistance. If an over discharge is detected, P2 is turned OFF. The bulk of P1 is kept atVBATT 532 while the bulk of P2 is kept atMID 534. This presents a series of reverse biased p-n diodes between VBATT and LOAD. - The cascaded switching configuration of the second embodiment, as illustrated in FIGS. 3 and 7, may be extended to three or more switches if needed to create adequate operating voltage. A problem that the may occur with the cascaded switch configuration is the floating of the MID node when both of the FET switches are OFF. Referring again to FIG. 3, if an over charging event causes both
N1 108 andN2 120 to be switched OFF, then the bulk of N1 is coupled to MID 142 and the bulk of N2 is coupled to GNDOUT 144. Because the bulk-drain p-n diodes are reverse biased, the bulk of N1, which is coupled to MID, is actually floating. A non-uniform voltage distribution between the two bulk-drain diodes may exist and could cause one of the diodes to conduct. - Referring now to FIG. 4, this problem is eliminated by adding a
voltage divider Z 1 232 andZ 2 236 between the positivebattery terminal VBATT 248 and theload terminal GNDOUT 252. The purpose of the voltage divider is to provide a means of insuring that the voltage difference is evenly split between each bulk-drain diode so that the full operating range is achieved without turning on the parasitic vertical npn. Thevoltage divider Z 1 232 andZ 2 236 may comprise, for example, two resistors of equal value. The addition of the voltage divider to steer the bulk potentials may also be added to the PMOS version of the cascaded switch circuit shown in FIG. 7. In addition to thevoltage divider Z 1 232 andZ 2 236, switches SW5 and SW6 are added to allow the biasing voltage to be switched ON and OFF as needed. The operating table for third embodiment including the voltage divider is shown as Table 5 below. The voltage divider is only coupled to the MID node when the circuit is in the charging mode. Note that the same operating table applies to both NMOS and PMOS versions.TABLE 5 Operating modes for Cascaded Circuit including Voltage Divider. Mode SW5 SW6 N1 BULK N1 N2 BULK N2 Charging ON OFF ON SW2 ON ON SW4 ON Over Charging ON ON OFF SW2 ON OFF SW4 ON Charging in Over ON OFF ON SW2 ON MOS SW4 ON Discharged State DIODE Discharging OFF OFF ON SW1 ON ON SW3 ON Over Discharging OFF OFF ON SW1 ON OFF SW3 ON Discharging in OFF OFF ON SW1 ON MOS SW3 ON Over Charged DIODE State - Referring now to FIG. 5, a block level diagram of an application of the present invention is shown. A battery control and
protection circuit 300 for a rechargeable battery is shown. Thecircuit 300 may comprise a single monolithic IC or a combination of IC chips and discrete components. Circuits are included to detect over voltage and current conditions. Thelogic block 320 uses these inputs to control the FET block 310 which comprises either a single FET or cascaded FET devices as disclosed in the present invention. - The present invention provides an effective and very manufacturable circuit for protecting a battery. The battery protection circuit controls charging and discharging of a battery. Both charging and discharging is controlled via a single FET having a switchable bulk connection. Switchable bulk FET devices may be cascaded to increase the voltage range of the circuit. The switchable bulk FET devices may comprise either NMOS or PMOS devices. The middle node between cascaded FET devices is steered to a known voltage during over charging to further improve performance.
- As shown in the preferred embodiments, the novel circuit provides an effective and manufacturable alternative to the prior art.
- While the invention has been particularly shown and described with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention.
Claims (32)
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EP01480138.8 | 2001-12-12 | ||
EP01480132A EP1320168A1 (en) | 2001-12-12 | 2001-12-12 | Power switch for battery protection |
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US20030122525A1 true US20030122525A1 (en) | 2003-07-03 |
US6670790B2 US6670790B2 (en) | 2003-12-30 |
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