CN209250230U - Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability - Google Patents
Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability Download PDFInfo
- Publication number
- CN209250230U CN209250230U CN201822104395.6U CN201822104395U CN209250230U CN 209250230 U CN209250230 U CN 209250230U CN 201822104395 U CN201822104395 U CN 201822104395U CN 209250230 U CN209250230 U CN 209250230U
- Authority
- CN
- China
- Prior art keywords
- circuit
- voltage
- charge
- battery
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/0036—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using connection detecting circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0063—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with circuits adapted for supplying loads from the battery
Abstract
The utility model provides a kind of single-wafer battery protecting circuit and charge-discharge circuit for improving anti-peak voltage ability.Battery protecting circuit includes: basic protection circuit, voltage clamping circuit, grid substrate control circuit and charge and discharge control metal-oxide-semiconductor；The source electrode of charge and discharge control metal-oxide-semiconductor or one end of drain electrode are connected to battery, and the other end is connected to charger or load, and grid and substrate are connected to grid substrate control circuit；The charge status of basic protection circuit detection battery, sends control signal to grid substrate control circuit, makes grid substrate control circuit according to the conducting situation of control signal control charge and discharge control metal-oxide-semiconductor, so that the charge and discharge to battery control；Voltage clamping circuit is used to clamp down on the supply voltage of grid substrate control circuit, prevents grid substrate control circuit, the damage of charge and discharge control metal-oxide-semiconductor.The utility model can make battery protecting circuit from the destruction of peak voltage and DC high voltage, extend the service life of charge-discharge circuit.
Description
Technical field
The utility model relates to battery charging and discharging technical field, espespecially a kind of single-wafer electricity for improving anti-peak voltage ability
Protect circuit and charge-discharge circuit in pond.
Background technique
With being continuously increased for mobile terminal function in recent years, the performance of mobile terminal is also rapidly being promoted, this is to terminal
Battery also proposed bigger requirement.Some application batteries needs are made very small, and it is very low that some application batteries need to be made cost,
And traditional battery protection schemes usually account for that plate area is very big, and cost is very high, are increasingly not suitable with the new market demand.
Traditional battery protection schemes are reached by discrete device.It needs a control circuit chip and one includes
There are two the chips of N-type power MOS pipe.Control circuit chip is realized by controlling the grid voltage of the two power MOS pipes
To the charge and discharge control of battery.Control circuit chip is to be made into CMOS technology, and power MOS pipe chip usually uses one kind vertical
DMOS the or UMOS pipe of structure is made into.Since CMOS and DMOS/UMOS are two kinds of entirely different techniques, control circuit core
Piece and two power MOS pipe chips are two independent chips typically from two different suppliers.In addition this separation
The charge and discharge peripheral circuit of device solution needs two resistance and a capacitor.
In order to reduce the scheme area of above-mentioned discrete device battery protection and reduce scheme cost, in Chinese patent
In CN103474967A, our company proposes single-wafer battery protecting circuit and charge-discharge circuit.This single-wafer battery protection electricity
The control circuit chip of traditional scheme, two power MOS pipe chips and a peripheral resistance are all integrated into one and half by road
On conductor substrate, peripheral charge-discharge circuit only needs a resistance and a capacitor.The single-wafer battery protection schemes that our company proposes
Not only by control circuit chip on two power MOS pipe integrated chips a to semiconductor substrate, further, our company will be passed
Two power MOS pipe structures of system scheme are merged into a power MOS pipe to further reduce scheme area and reduce scheme cost.
Currently, in order to which circuit area is accomplished that minimum and cost is accomplished minimum, usually selects 5V CMOS technology real
It is existing.And 5V CMOS technology metal-oxide-semiconductor breakdown voltage is in 8V~12V.Since battery protecting circuit is in charge and discharge and production test
The up to peak voltage of 16V and DC high voltage may be generated in journey, protected with the single-wafer battery that 5V CMOS technology is made into
Protection circuit can be by peak voltage or DC high voltage breakdown to cause the damage of single-wafer battery protecting circuit.
A kind of intuitive solution is that the higher semiconductor technology of breakdown voltage is selected to increase single-wafer battery protection
The pressure voltage of circuit can bear 16V peak voltage and DC high voltage, it is done so that will increase the technique number of plies with
And semiconductor devices occupied area on chip is greatly increased, so that the cost for protecting circuit is gone up significantly.
In view of this, the present invention provides a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability and
Charge-discharge circuit, to solve the problems, such as that above-mentioned single-wafer battery protecting circuit is damaged by DC high voltage and peak voltage.
Summary of the invention
The purpose of the utility model is to provide a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability and fill
Discharge circuit, in battery production test process and charge and discharge in use, single-wafer battery protecting circuit can be made from direct current height
The damage of voltage and peak voltage extends the service life of charge-discharge circuit and battery.
The technical scheme that the utility model is provided is as follows:
The utility model provides a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability, comprising: basic
Protect circuit, voltage clamping circuit, grid substrate control circuit and charge and discharge control metal-oxide-semiconductor；
One end of the source electrode and drain electrode of the charge and discharge control metal-oxide-semiconductor is connected to battery negative terminal, the charge and discharge control MOS
The other end of the source electrode and drain electrode of pipe is connected to the cathode of charger or load；The grid and lining of the charge and discharge control metal-oxide-semiconductor
Bottom is respectively connected to the grid substrate control circuit.
The charge status of the basic protection circuit detection battery sends control letter to the grid substrate control circuit
Number, so that the grid substrate control circuit is controlled the conducting situation of the charge and discharge control metal-oxide-semiconductor according to the control signal, from
And the charge and discharge of battery are controlled；
The voltage clamping circuit is used to clamp down on the supply voltage of grid substrate control circuit, prevents the grid substrate control electricity
Road, the damage of charge and discharge control metal-oxide-semiconductor.
Battery protecting circuit in this programme is related to very more semiconductor devices, in battery production test process and fills
Electric discharge may be damaged when using by peak voltage or DC high voltage.Such as the breakdown voltage of 5V CMOS technology metal-oxide-semiconductor 8V~
12V will damage metal-oxide-semiconductor if the peak voltage generated when production test procedure and charge and discharge use is more than this breakdown voltage
It is bad.General intuitive solution is to improve the pressure voltage of metal-oxide-semiconductor, so will increase the technique number of plies and increase metal-oxide-semiconductor exists
Area on chip improves the cost of chip.This programme is in order to guaranteeing that cost and chip area under the premise of protect device
It is not damaged by peak voltage or DC high voltage, joined voltage clamping circuit, in a certain range by voltage clamp, even if in life
Produce test process in and charge and discharge using when have peak voltage or DC high voltage, voltage clamp can also pacified by voltage clamping circuit
Full voltage range protects circuit not to be damaged.
In the production test procedure of battery protecting circuit, battery protection chip and resistance capacitance are made into battery first
Then battery protecting plate and battery core are concatenated together into the battery with defencive function by protection board.In the production of the battery
Such as protection board tester, comprehensive tester, the test equipments such as grading system can be often used in test process.Protection board tester
For detecting whether protection board is qualified, comprehensive tester is for detecting whether the battery with defencive function is qualified, and grading system is used for
Detect the amount of capacity of the battery with defencive function.These test equipments often generate the point for being up to 16V during the test
Peak voltage or DC high voltage, therefore, conventional batteries protection scheme are needed charge control metal-oxide-semiconductor Mc and control of discharge metal-oxide-semiconductor
The breakdown voltage of Md accomplishes 16V or more, to prevent stop-band defencive function battery in production test procedure by the peak voltage of 16V
Or DC high voltage breakdown.
Theoretically, single-wafer battery protecting circuit is needed the breakdown voltage of the source electrode and drain electrode of charge and discharge control metal-oxide-semiconductor
Accomplish 16V or more simultaneously, just can guarantee that the battery with defencive function is not devices under the height of generation in production test procedure
Peak voltage or DC high voltage up to 16V puncture.But the breakdown voltage of charge and discharge control metal-oxide-semiconductor is accomplished into 16V or more, at
This meeting is very high.
Using the voltage clamping circuit of the utility model, the pressure resistance of charge and discharge control metal-oxide-semiconductor only needs 12V, that is, tradition 5V
The breakdown voltage of CMOS technology, can anti-stop-band defencive function battery in production test procedure and charge and discharge use when not by
The up to peak voltage of 16V or DC high voltage breakdown.
Preferably, the grid substrate control circuit includes grid control section and substrate control section；The grid control
System part is connect with the grid of the charge and discharge control metal-oxide-semiconductor, the substrate control section and the charge and discharge control metal-oxide-semiconductor
Substrate connection；
The grid control section exports grid control response signal according to the control signal, and it is automatically controlled to control the charge and discharge
The grid voltage of metal-oxide-semiconductor processed, the substrate control section export substrate control response signal according to the control signal, control institute
The underlayer voltage of charge and discharge control metal-oxide-semiconductor is stated, to control the conducting situation of the charge and discharge control metal-oxide-semiconductor.
Preferably, the voltage clamping circuit includes divider resistance R5 and Zener；One end of the divider resistance R5 is connected to
The other end of supply voltage VDD, the divider resistance R5 are connected to the cathode of the Zener, the anode connection of the Zener
The end VSS.
This programme can well clamp down on the supply voltage of grid substrate control circuit according to the principle of stabilized voltage of Zener
Within the scope of safe voltage, grid substrate control circuit and charge and discharge control metal-oxide-semiconductor is protected not to be damaged.
Preferably, the voltage clamping circuit includes divider resistance R5 and N number of unidirectional concatenated diode, N >=1；
One end of the divider resistance R5 is connected to supply voltage VDD, and the other end of the divider resistance R5 is connected to institute
The anode of N number of unidirectional concatenated diode is stated, the negative terminal of N number of unidirectional concatenated diode is connected to the end VSS.
Preferably, the voltage clamping circuit includes divider resistance R5 and N number of concatenated NMOS tube, N >=1；
One end of the divider resistance R5 is connected to supply voltage VDD, and the other end of the divider resistance R5 passes through the N
A concatenated NMOS tube is connected to the end VSS.
Preferably, the voltage clamping circuit includes divider resistance R5 and N number of concatenated PMOS tube, N >=1；
One end of the divider resistance R5 is connected to supply voltage VDD, and the other end of the divider resistance R5 passes through the N
A concatenated PMOS tube is connected to the end VSS.
Preferably, the voltage clamping circuit includes low pressure difference linear voltage regulator.
Preferably, further includes: thermal-shutdown circuit, for detecting the integrated core of the battery protecting circuit institute in charge and discharge
The temperature of piece, and with the transmission for controlling signal described in the basic protection circuit co- controlling.
Preferably, the thermal-shutdown circuit includes excess temperature comparator and logic control element.
Thermal-shutdown circuit is capable of the temperature of chip where real-time detection battery protecting circuit in this programme, when temperature occurs
When abnormal, thermal-shutdown circuit can be transmitted across temperature control signal, disconnect charging and discharging circuit, play to battery protecting circuit
Protective effect.
Preferably, the basic protection circuit specifically includes:
Reference circuit, electric discharge overcurrent comparator, discharge short comparator, charging overcurrent comparator, over-discharge voltage comparator,
Overcharged voltage comparator, delay circuit, charge and discharge power detection circuit；The control signal includes first control signal VCHOC1,
Two control signal VOC2 and third control signal VOD2；
The reference circuit is used to generate the positive input signal VOC1 of the electric discharge overcurrent comparator；The discharge short ratio
Compared with the positive input signal VSHORT of device；The negative input signal VCHOC of the charging overcurrent comparator；The over-discharge voltage comparator
Negative input signal VODV；The positive input signal VOCV of the overcharged voltage comparator；And generate the excess temperature comparator
Positive input signal VPN and negative input signal VOTP.
The electric discharge size of the overcurrent comparator based on positive input signal VOC1 Yu negative input signal-virtual ground voltage VM1
Comparison result exports high level VDD or low level VGND；
The discharge short comparator is big based on positive input signal VSHORT and negative input signal-virtual ground voltage VM1's
Small comparison result exports high level VDD or low level VGND；
The charging overcurrent comparator is based on the big of positive input signal virtual ground voltage VM1 and negative input signal VCHOC
Small comparison result exports high level VDD or low level VGND；And it is controlled to grid substrate control circuit output described first
Signal VCHOC1；
Negative input letter of the overcharged voltage comparator based on positive input signal VOCV and vdd voltage after electric resistance partial pressure
The size comparison result of number VROCV exports high level VDD or low level VGND；
Positive input signal VRODV and negative input of the over-discharge voltage comparator based on vdd voltage after electric resistance partial pressure
The size comparison result of signal VODV exports high level VDD or low level VGND；
The output of output result, the discharge short comparator of the delay circuit based on the electric discharge overcurrent comparator
As a result, output result, the output result and the overdischarge of the overcharged voltage comparator of the charging overcurrent comparator
The output of comparator is pressed as a result, carrying out respective delay, respective delay length may be different, using logical process
Export the second control signal VOC2 and third control signal VOD2.
Preferably, in the basic protection circuit, the second control signal VOC2 and the third control signal
When VOD2 exports high level, grid substrate control circuit is controlled according to the second control signal VOC2 and the third
Signal VOD2 exports high-level gate voltage VGATE as grid control response signal；
When second control signal VOC2 and third control signal VOD2 at least one output low level VGND, grid lining
Bottom control circuit controls signal VOD2, output low level grid electricity according to the second control signal VOC2 and the third
Press VGATE as grid control response signal.
The utility model additionally provides a kind of battery charger, including above-mentioned battery protecting circuit, charger, electricity
Pond, RC filter circuit, in which:
One end of resistance R0 is connect with supply voltage vdd terminal in the RC filter circuit, and the other end of the resistance R0 is same
The anode connection of the battery；
One end of capacitor C0 is connect with the supply voltage vdd terminal in the RC filter circuit, and the capacitor C0's is another
It holds and is connected with the cathode of the battery；
The anode of the charger is connect in charging with the anode of the battery, provides charging voltage for the battery.
The utility model additionally provides a kind of battery discharging circuit, including above-mentioned battery protecting circuit, RC filter circuit,
Battery, load, in which:
One end of resistance R0 is connect with supply voltage vdd terminal in the RC filter circuit, the other end of the resistance R0 with
The anode connection of the battery；
One end of capacitor C0 is connect with the supply voltage vdd terminal in the RC filter circuit, and the capacitor C0's is another
It holds and is connected with the cathode of the battery；
The anode of the battery is connect in electric discharge with the anode of the load, provides power supply for the load, described negative
The cathode of load is connect by charge and discharge control metal-oxide-semiconductor with the cathode of the battery.
Pass through a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability provided by the utility model and charge and discharge
Circuit, can bring it is following at least one the utility model has the advantages that
It, will be between the end supply voltage GVDD and VSS of grid substrate control circuit using voltage clamping circuit in the utility model
Voltage clamp within a preset range.Improve battery protecting circuit chip in production test procedure and charge and discharge use when
Pressure resistance prevents the device failure in battery protecting circuit.
Detailed description of the invention
Below by clearly understandable mode, preferred embodiment is described with reference to the drawings, improves anti-peak voltage to a kind of
The single-wafer battery protecting circuit of ability and above-mentioned characteristic, technical characteristic, advantage and its implementation of charge-discharge circuit give
It further illustrates.
Fig. 1 is the charging and discharging circuit structure diagram of traditional discrete device battery protecting circuit；
Fig. 2 is the charging and discharging circuit structure diagram of existing single-wafer battery protecting circuit；
Fig. 3 is a kind of circuit diagram of grid substrate control circuit in existing single-wafer battery protection schemes technology；
Fig. 4 is a kind of single-wafer battery protecting circuit and charge-discharge circuit for improving anti-peak voltage ability of the utility model
Structure chart；
Fig. 5 is the structure chart of the basic protection circuit in Fig. 4；
Fig. 6 is the circuit diagram of thermal-shutdown circuit in Fig. 4；
Fig. 7 is a kind of circuit diagram of the grid substrate control circuit in Fig. 4；
Fig. 8 is another circuit diagram of the grid substrate control circuit in Fig. 4；
Fig. 9 is a kind of circuit diagram of the voltage clamping circuit in an embodiment of the present invention；
Figure 10 is another circuit diagram of the voltage clamping circuit in an embodiment of the present invention；
Figure 11 is another circuit diagram of the voltage clamping circuit in an embodiment of the present invention；
Figure 12 is another circuit diagram of the voltage clamping circuit in an embodiment of the present invention；
Figure 13 is another circuit diagram of the voltage clamping circuit in an embodiment of the present invention.
Specific embodiment
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, attached drawing will be compareed below
Illustrate specific embodiment of the present utility model.It should be evident that the accompanying drawings in the following description is only the one of the utility model
A little embodiments for those of ordinary skill in the art without creative efforts, can also be according to these
Attached drawing obtains other attached drawings, and obtains other embodiments.
To make simplified form, part relevant to the utility model is only schematically shown in each figure, they are not
Represent its practical structures as product.In addition, there is identical structure or function in some figures so that simplified form is easy to understand
The component of energy, only symbolically depicts one of those, or only marked one of those.Herein, "one" is not only
It indicates " only this ", can also indicate the situation of " more than one ".
Fig. 1 is the charge-discharge circuit of traditional discrete device battery protection schemes.Control circuit A passes through two power of control
The grid voltage of metal-oxide-semiconductor (Mc and Md) realizes the charge and discharge control to battery.Control circuit A be made into CMOS technology, and
Power MOS pipe (Mc and Md) is usually made into a kind of DMOS or UMOS pipe of vertical structure.Since CMOS and DMOS/UMOS are two
The entirely different technique of kind, therefore control circuit A and two power MOS pipes (Mc and Md) are typically from two different supplies
Quotient, is two independent chips, and peripheral circuit needs two resistance R0 and Rvm and capacitor C0.
Fig. 2 is the internal frame diagram and charge-discharge circuit of battery protecting circuit in single-wafer battery protection schemes technology.Work as electricity
When pond protection circuit enters overcharged voltage protection, charging overcurrent protection or charging overheat protector, the charging of battery protecting circuit is logical
Road is closed, and the voltage of charger is provided by external charging circuit completely.Basic protection circuit inside battery protecting circuit, mistake
Temperature protection circuit, logic control element I12, logic control element I13 are battery power supplies, and without high voltage, circuit will not be high
Pressure is broken.But supply voltage of the grid substrate control circuit in charge protection is charger voltage, in production test procedure
And in charger access procedure, this voltage is likely to be breached the high pressure of 16V, then can damage the grid substrate control circuit,
Simultaneously it is also possible to that the charge and discharge control metal-oxide-semiconductor M0 can be damaged.Fig. 3 is that grid serves as a contrast in existing single-wafer battery protection schemes technology
The circuit diagram of bottom control circuit.Referring to shown in Fig. 3, the substrate control of grid control circuit and output VSUB including outputting VGA TE
Circuit processed, since the low level VSS voltage and VGND voltage of grid control circuit are not duplicate current potential, grid control electricity
Road input VOD voltage, VOC voltage, VCHOC1 voltage low potential be VGND voltage, need to be converted into VSS voltage.VOD electricity
Pressure, VOC voltage, VCHOC1 voltage require a level shifting circuit, say by taking the level shifting circuit of VOD voltage as an example below
It is bright.
Metal-oxide-semiconductor M7, M8, M9, M10, logic control element I6 complete the low transition of VOD voltage.When VOD voltage is height
When level VDD, for transistor M7 by, transistor M8 conducting, VODP voltage is high level VDD；When VOD voltage is low level VGND
When, transistor M7 conducting, transistor M8 are by VODP voltage is low level VSS, completes to turn from VGND level to VSS level
It changes.Similarly VOC voltage is converted into VOCP voltage, VCHOC1 voltage is converted into VCHOC1P voltage, VCHOC1N voltage.When VODP electricity
When pressure, VOCP voltage are all high level, the output of the end VGATE is high level VDD, is when having one in VODP voltage, VOCP voltage
When low level VSS, the output of the end VGATE is low level VSS.When VOCP be high level, VGOC is low level, VGOCB be high level,
The metal-oxide-semiconductor M1 conducting, metal-oxide-semiconductor M2 cut-off, output VSUB voltage are equal to VGND voltage；When VOCP is low level, VGOC
It is low level, metal-oxide-semiconductor M1 cut-off, metal-oxide-semiconductor M2 conducting, output VSUB voltage equal to VM electricity for high level, VGOCB
Pressure.When VCHOC1 voltage is high, VCHOC1P voltage is height, and VCHOC1N voltage is low, the metal-oxide-semiconductor M19 conducting, the MOS
Pipe M20 cut-off, VSS voltage are equal to VGND voltage；VCHOC1 voltage be it is low when, VCHOC1P voltage be it is low, VCHOC1N voltage is
Height, the metal-oxide-semiconductor M19 cut-off, metal-oxide-semiconductor M20 conducting, VSS voltage are equal to VM voltage.
In being described above when VCHOC1 voltage is low level, VSS voltage is equal to VM voltage, then vdd voltage~VSS voltage
Between pressure difference between vdd voltage~VM voltage pressure difference, vdd voltage~VM electricity when production test procedure and charge and discharge use
Pressure may generate the up to peak voltage of 16V or DC voltage, and 5V CMOS technology metal-oxide-semiconductor breakdown voltage is in 8V~12V,
Lower than the peak voltage or DC voltage of generation, then existing grid substrate control circuit can be damaged or puncture.
Conclusion based on above-mentioned analysis, the utility model provide a kind of new battery protecting circuit.Fig. 4 is the utility model one
The structure chart of battery charge-discharge circuit in embodiment.Fig. 5 is the structure chart of the basic protection circuit in Fig. 4.Fig. 6 is in Fig. 4
The circuit diagram of thermal-shutdown circuit.Fig. 7, Fig. 8 are two kinds of circuit diagrams of the grid substrate control circuit in Fig. 4.Such as Fig. 7, Fig. 8 institute
Show, grid substrate control circuit includes grid control section and substrate control section, the grid control section and the substrate
Control section has common circuit.Referring to shown in Fig. 4 to Fig. 7, relative to the grid in the battery protecting circuit and Fig. 3 in Fig. 2
Substrate control circuit increases voltage clamping circuit and improves grid substrate control circuit.In Fig. 4, when battery protecting circuit into
When entering overcharged voltage protection, charging overcurrent protection or charging overheat protector, the charging path of battery protecting circuit is closed, charging
The voltage of device is provided by external charging circuit completely.Referring to shown in Fig. 7, the positive power source terminal of improved grid substrate control circuit
Enter overcharged voltage protection, charging overcurrent protection or charging excess temperature for output voltage GVDD, the battery protecting circuit of voltage clamping circuit
When protection, negative power end VSS voltage is VM, and in addition to this negative power end VSS voltage is VGND.The confession of grid substrate control circuit
Piezoelectric voltage is GVDD~VM or GVDD~VGND, which is clamped, lower than MOS all inside grid substrate control circuit
The breakdown voltage of pipe, grid substrate control circuit will not be damaged.
Referring to shown in Fig. 4, the battery protecting circuit in an embodiment of the present invention includes: basic protection circuit, excess temperature
Protection circuit, grid substrate control circuit, the first logic control element I12, the second logic control element I13, fills voltage clamping circuit
Control of discharge metal-oxide-semiconductor M0.One end of the source electrode and drain electrode of the charge and discharge control metal-oxide-semiconductor M0 is connected to the battery negative terminal, institute
The other end for stating the source electrode and drain electrode of charge and discharge control metal-oxide-semiconductor M0 is connected to the cathode of the charger or load；The charge and discharge
The grid and substrate of electric control metal-oxide-semiconductor M0 is respectively connected to the grid substrate control circuit；The basic protection circuit detection
The charge status of battery, Xiang Suoshu grid substrate control circuit send control signal, make the grid substrate control circuit root
The conducting situation that the charge and discharge control metal-oxide-semiconductor M0 is controlled according to the control signal, so that the charge and discharge to battery control；
Referring to Figure 5, the basic protection circuit in Fig. 4 includes: reference circuit, electric discharge overcurrent comparator, discharge short
Comparator, charging overcurrent comparator, over-discharge voltage comparator, overcharged voltage comparator, charging detecting circuit, delay circuit, electricity
Hinder R1, resistance R2, resistance R3, resistance R4, logic control element I0, logic control element I1, logic control element I2, logic control
Unit I3 and logic control element I4 processed.
Wherein, reference circuit is used to generate the positive input signal VOC1 of the electric discharge overcurrent comparator, the discharge short
The positive input signal VSHORT of comparator, the charging negative input signal VCHOC of overcurrent comparator, reference output voltage VPN,
The negative input letter of VOTP, the positive input signal VOCV of the overcharged voltage comparator and the generation over-discharge voltage comparator
Number VODV.
Electric discharge overcurrent comparator is based on positive input signal VOC1 compared with the size of negative input signal-virtual ground voltage VM1
As a result, VOC1 exports high level VDD when being greater than VM1, VOC1 exports low level VGND when being lower than VM1.
Size ratio of the discharge short comparator based on positive input signal VSHORT Yu negative input signal-virtual ground voltage VM1
Compared with as a result, VSHORT exports high level VDD when being greater than VM1, VSHORT exports low level VGND when being lower than VM1.
Charge size ratio of the overcurrent comparator based on positive input signal virtual ground voltage VM1 Yu negative input signal VCHOC
Compared with as a result, VM1 exports high level VDD when being greater than VCHOC, VM1 exports low level VGND when being lower than VCHOC.
Negative input letter of the overcharged voltage comparator based on positive input signal VOCV and vdd voltage after electric resistance partial pressure
The size comparison result of number VROCV exports high level VDD or low level VGND.
Positive input signal VRODV and negative input of the over-discharge voltage comparator based on vdd voltage after electric resistance partial pressure
The size comparison result of signal VODV exports high level VDD or low level VGND.
Size comparison result of the charge and discharge power detection circuit based on positive input VGND Yu negative input signal VM1 exports high level
VDD or low level VGND.VGND exports high level VDD when being greater than VM1, VGND exports low level VGND when being lower than VM1.
Delay circuit is used for the output signal VOC1P of overcurrent comparator that discharges, the output signal of discharge short comparator
VSHORTP, the output signal VCHOC1 of overcurrent comparator that charges, output signal VODVP, the overcharged voltage of over-discharge voltage comparator
The output signal VOCVP of comparator is delayed, corresponding output VDOC1, VDSHORT, VDCHOC, VDODV, VDOCV after delay.
VDOC1 is signal of the VOC1P by delay, and VDSHORT is that signal, VDCHOC of the VSHORTP by delay are that VCHOC1 passes through
Signal, the VDODV of delay are that the signal, VDOCV of VODVP into delay excessively are signal of the VOCVP by delay.
When VDOC1, VDSHORT, VDODV, all for it is high when, VOD3 output be high level VDD, VDOC1, VDSHORT,
VDODV, at least one for it is low when, VOD3 output be low level VGND.
When VDCHOC, VDOCV are high, VOC3 output is high level VDD.At least one in VDCHOC, VDOCV is low
When, VOC3 output is low level VGND.
When at least one in VOD3, VCHP is high, VOD2 output is high level VDD, when being all low in VOD3, VCHP
When, VOD2 output is low level VGND.
When at least one in VOC3, VCHN is high, VOC2 output is high level VDD, when being all low in VOC3, VCHN
When, VOC2 output is low level VGND.
Fig. 6 is thermal-shutdown circuit, including excess temperature comparator, the first logic control I14, the second logic control element I15,
Third logic control element I16.
Size comparison result of the excess temperature comparator based on positive input signal VPN Yu negative input signal VOTP, VPN are greater than VOTP
When output high level, VPN be less than VOTP when export low level.
When at least one in VOTPP, VCHN1 is high, VCHOTP output is high level VDD, when VOTPP, VCHN1 are
When low, VCHOTP output is low.
When at least one in VOTPP, VCHP is high, VDISOTP output is high level VDD, when VOTPP, VCHP are
When low, VDISOTP output is low.
Fig. 7 is a kind of circuit diagram of grid substrate control circuit.Relatively original grid substrate control circuit increases
Resistance R11, R12, R13, R14, R15, R16 and metal-oxide-semiconductor M21, M22, M23, M24, M25, M26.Below with R11, R12,
M21, M22 illustrate the effect that resistance and metal-oxide-semiconductor is added: due to increasing voltage clamping circuit, the positive supply of grid substrate control circuit
Voltage be voltage clamping circuit output current potential GVDD, and input voltage VOD may be high level VDD or low level VGND, GVDD~
The voltage of VDD, GVDD~VGND can exceed that the gate breakdown voltage of metal-oxide-semiconductor M7, M8 to damage metal-oxide-semiconductor M7, M8, are added
The maximum voltage of GATE to the GVDD of M7, M8 are the diode voltage of M21, M22 parasitism, the parasitism after R11, M21, R12, M22
Diode voltage will not damage metal-oxide-semiconductor.Similarly: R13, R14, M23, M24 protect M11, M12 not damaged；R15,R16,M25,
M26 protects M15, M16 not damaged.
Fig. 8 is to substitute M21, M22, M23, M24, M25, M26 in Fig. 7 with diode, realizes above-mentioned same function.
Fig. 9 is the structure chart of the voltage clamping circuit in an embodiment of the present invention.Including a concatenated divider resistance R5 with
Zener Z0；The connecting pin of the divider resistance R5 and Zener Z0 is output end GVDD, another company of the divider resistance R5
Supply voltage VDD is met, the other end of the Zener connects the end VSS.
Principle of the voltage clamp between GVDD and VSS in a preset range can be by foregoing circuit: Zener
PN junction resistance in reverse breakdown state is extremely low, thus in Zener conducting, GVDD~VSS voltage is equal to the breakdown of Zener
Voltage；When Zener is not turned on, GVDD is no better than VDD.
When the voltage of VDD~VSS is lower than the conducting voltage of Zener, GVDD is equal to VDD；When the voltage of VDD~VSS is higher than
When the conducting voltage of Zener, GVDD~VSS maximum output voltage is Zener tube voltage.General IC interior Zener
Conducting voltage is 5.5~6.5V, if the voltage of VDD~VSS continues to increase, electric conduction of the Zener voltage stabilization in Zener
Pressure, remaining voltage are all dropped on resistance R5, be will not have a problem for tens volts of pressure drop on resistance R5；Therefore the pressure resistance of VDD~VSS
Up to tens volts will not all damage voltage clamping circuit.
The supply voltage of grid substrate control circuit is the voltage of GVDD~VSS, and maximum value is the conducting voltage of Zener.
Lower than breakdown voltage 8V~12V of metal-oxide-semiconductor, therefore grid substrate control circuit will not be damaged.
Figure 10 is the structure chart of the voltage clamping circuit in another embodiment of the utility model.
Referring to Fig.1 shown in 0, the voltage clamping circuit includes divider resistance R5 and N number of unidirectional concatenated diode, N >=1；Institute
The one end for stating divider resistance R5 is connected to supply voltage VDD, and the other end of the divider resistance R5 is connected to N number of unidirectional string
The negative terminal of the anode of the diode of connection, N number of unidirectional concatenated diode is connected to the end VSS.
As can be seen that difference is compared with Fig. 9: Zener is replaced with N number of end the supply voltage GVDD to described
The series diode of the end VSS one-way conduction, N >=1.
The principle of voltage clamp between GVDD and VSS within a preset range can be by multiple Diode series: utilize
The gradual characteristic of diode forward conducting voltage, in diode current flow, GVDD~VSS voltage is equal to the electric conduction of multiple diodes
The sum of pressure；When diode is not turned on, GVDD is no better than VDD.
Figure 11 and Figure 12 is the structure chart of the voltage clamping circuit in the utility model another embodiment.
Referring to Fig.1 shown in 1,12, the voltage clamping circuit includes divider resistance R5 and N number of concatenated NMOS tube, N >=1；It is described
One end of divider resistance R5 is connected to supply voltage VDD, and the other end of the divider resistance R5 passes through N number of concatenated NMOS
Pipe is connected to the end VSS.Alternatively, the voltage clamping circuit includes divider resistance R5 and N number of concatenated PMOS tube, N >=1；The partial pressure
One end of resistance R5 is connected to supply voltage VDD, and the other end of the divider resistance R5 is connected by N number of concatenated PMOS tube
It is connected to the end VSS.
As can be seen that difference is compared with Fig. 9: Zener is replaced with N number of concatenated NMOS tube or N number of concatenated
PMOS tube, N >=1.
The principle of voltage clamp between GVDD and VSS within a preset range is by multiple NMOS tandem energies: NMOS's
Drain terminal and grid are shorted together, and NMOS is equivalent to a diode, and forward conduction voltage is the threshold voltage vt hn of NMOS.Cause
, when NMOS is connected, GVDD voltage is equal to the sum of the threshold voltage of multiple NMOS for this；When NMOS is not turned on, GVDD is no better than
VDD。
Multiple PMOS tandem energies go here and there the principle of the voltage clamp between GVDD and VSS within a preset range with multiple NMOS
Connection clamps down on the principle of voltage clamp within a preset range between GVDD and VSS.
Figure 13 is the structure chart of the voltage clamping circuit in another embodiment of the utility model.
Referring to Fig.1 shown in 3, the voltage clamping circuit includes low pressure difference linear voltage regulator.As can be seen that compared with Fig. 9, difference
Be: voltage clamping circuit is low pressure difference linear voltage regulator.
The principle of voltage clamp between GVDD and VSS within a preset range can be by low pressure difference linear voltage regulator LDO:
When VDD~VSS voltage is lower, VDD~VSS voltage carries out partial pressure output lower voltage VG3, VG3 by resistance R6, resistance R7
Lower than the gate turn-on voltage of NMOS tube M3, NMOS tube M3 is closed, and VD3 is height, and after logic control element I5, VEN0 is
Low, metal-oxide-semiconductor M6 cut-off, metal-oxide-semiconductor M5 conducting, output GVDD voltage is equal to vdd voltage.When VDD~VSS voltage is higher, VDD~
VSS voltage carries out the grid of partial pressure output high voltage VG3, VG3 higher than NMOS tube M3 by resistance R6, resistance R7 and opens electricity
Pressure, NMOS tube M3 open, VD3 be it is low, after logic control element I5, VEN0 be height, metal-oxide-semiconductor M6 conducting, metal-oxide-semiconductor M5 cut
Only, since the positive input voltage reference voltage of amplifier is equal to the cathode input voltage VR10 of amplifier, while VR10 voltage
It divides to obtain by resistance R9, resistance R10 for GVDD, then output voltage: GVDD=reference voltage * (R9+R10)/R10.
It should be noted that above-described embodiment can be freely combined as needed.The above is only the utility model
Preferred embodiment, it is noted that for those skilled in the art, do not departing from the utility model principle
Under the premise of, several improvements and modifications can also be made, these improvements and modifications also should be regarded as the protection scope of the utility model.
Claims (11)
1. a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability, is characterized in that, comprising: substantially protection circuit,
Voltage clamping circuit, grid substrate control circuit and charge and discharge control metal-oxide-semiconductor；
One end of the source electrode and drain electrode of the charge and discharge control metal-oxide-semiconductor is connected to battery negative terminal, the charge and discharge control metal-oxide-semiconductor
The other end of source electrode and drain electrode is connected to charger cathode or load；The grid and substrate of the charge and discharge control metal-oxide-semiconductor are distinguished
It is connected to the grid substrate control circuit；
The voltage clamping circuit is used to clamp down on the supply voltage of grid substrate control circuit.
2. a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability according to claim 1, feature exist
In: the grid substrate control circuit includes grid control section and substrate control section；The grid control section with it is described
The grid of charge and discharge control metal-oxide-semiconductor connects, and the substrate control section is connect with the substrate of the charge and discharge control metal-oxide-semiconductor.
3. a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability according to claim 1, feature exist
In the voltage clamping circuit includes divider resistance R5 and Zener；One end of the divider resistance R5 is connected to supply voltage VDD,
The other end of the divider resistance R5 is connected to the cathode of the Zener, the anode connection end VSS of the Zener.
4. a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability according to claim 1, feature exist
In the voltage clamping circuit includes divider resistance R5 and N number of unidirectional concatenated diode, N >=1；
One end of the divider resistance R5 is connected to supply voltage VDD, and the other end of the divider resistance R5 is connected to described N number of
The negative terminal of the anode of unidirectional concatenated diode, N number of unidirectional concatenated diode is connected to the end VSS.
5. a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability according to claim 1, feature exist
In the voltage clamping circuit includes divider resistance R5 and N number of concatenated NMOS tube, N >=1；
One end of the divider resistance R5 is connected to supply voltage VDD, and the other end of the divider resistance R5 passes through N number of string
The NMOS tube of connection is connected to the end VSS.
6. a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability according to claim 1, feature exist
In the voltage clamping circuit includes divider resistance R5 and N number of concatenated PMOS tube, N >=1；
One end of the divider resistance R5 is connected to supply voltage VDD, and the other end of the divider resistance R5 passes through N number of string
The PMOS tube of connection is connected to the end VSS.
7. a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability according to claim 1, feature exist
In the voltage clamping circuit includes low pressure difference linear voltage regulator.
8. a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability as described in claim 1, is characterized in that, also
Include:
Thermal-shutdown circuit, for detecting the temperature of the battery protecting circuit institute integrated chip in charge and discharge.
9. a kind of single-wafer battery protecting circuit for improving anti-peak voltage ability as described in claim 1, is characterized in that, institute
Basic protection circuit is stated to specifically include:
Reference circuit, electric discharge overcurrent comparator, charging overcurrent comparator, over-discharge voltage comparator, overcharge discharge short comparator
Voltage comparator, delay circuit, charge and discharge power detection circuit.
10. a kind of battery charger, is characterized in that, including a kind of anti-point of raising as claimed in any one of claims 1-9 wherein
Single-wafer battery protecting circuit and charger, battery, the RC filter circuit of peak voltage capability, in which:
One end of resistance R0 is connect with supply voltage vdd terminal in the RC filter circuit, the other end of the resistance R0 with it is described
Anode connection；
One end of capacitor C0 is connect with the supply voltage vdd terminal in the RC filter circuit, and the other end of the capacitor C0 is same
The cathode of the battery connects, and the anode of the charger is connect with the anode of the battery, provides charging electricity for the battery
The cathode of pressure, the charger is connect by the charge and discharge control metal-oxide-semiconductor with the cathode of the battery.
11. a kind of battery discharging circuit, is characterized in that, anti-including a kind of raising as described in any one of claims 1 to 10
The single-wafer battery protecting circuit of peak voltage ability and RC filter circuit, battery, load, in which:
One end of resistance R0 is connect with supply voltage vdd terminal in the RC filter circuit, the other end of the resistance R0 with it is described
The anode connection of battery；
One end of capacitor C0 is connect with the supply voltage vdd terminal in the RC filter circuit, and the other end of the capacitor C0 is same
The cathode of the battery connects；
The anode of the battery is connect with the anode of the load, provides power supply for the load, the cathode of the load passes through
The charge and discharge control metal-oxide-semiconductor is connect with the cathode of the battery.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2018113105851 | 2018-11-06 | ||
| CN201811310585 | 2018-11-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209250230U true CN209250230U (en) | 2019-08-13 |
Family
ID=65559069
Family Applications (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822104395.6U Active CN209250230U (en) | 2018-11-06 | 2018-12-14 | Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability |
| CN201811536650.2A Pending CN109449891A (en) | 2018-11-06 | 2018-12-14 | Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability |
| CN201921874738.5U Active CN212572075U (en) | 2018-11-06 | 2019-11-01 | Single-wafer battery protection circuit, battery charging and discharging circuit and portable electronic equipment |
| CN201921874739.XU Active CN212543359U (en) | 2018-11-06 | 2019-11-01 | Single-wafer battery protection circuit, battery charging and discharging circuit and portable electronic equipment |
| CN201911061330.0A Pending CN110854832A (en) | 2018-11-06 | 2019-11-01 | Single-wafer battery protection circuit, battery charging and discharging circuit and portable electronic equipment |
| CN201911060468.9A Withdrawn CN110854831A (en) | 2018-11-06 | 2019-11-01 | Single-wafer battery protection circuit, battery charging and discharging circuit and portable electronic equipment |
| CN201921875670.2U Active CN212572076U (en) | 2018-11-06 | 2019-11-01 | Single-wafer battery protection circuit, battery charging and discharging circuit and portable electronic equipment |
Family Applications After (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811536650.2A Pending CN109449891A (en) | 2018-11-06 | 2018-12-14 | Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability |
| CN201921874738.5U Active CN212572075U (en) | 2018-11-06 | 2019-11-01 | Single-wafer battery protection circuit, battery charging and discharging circuit and portable electronic equipment |
| CN201921874739.XU Active CN212543359U (en) | 2018-11-06 | 2019-11-01 | Single-wafer battery protection circuit, battery charging and discharging circuit and portable electronic equipment |
| CN201911061330.0A Pending CN110854832A (en) | 2018-11-06 | 2019-11-01 | Single-wafer battery protection circuit, battery charging and discharging circuit and portable electronic equipment |
| CN201911060468.9A Withdrawn CN110854831A (en) | 2018-11-06 | 2019-11-01 | Single-wafer battery protection circuit, battery charging and discharging circuit and portable electronic equipment |
| CN201921875670.2U Active CN212572076U (en) | 2018-11-06 | 2019-11-01 | Single-wafer battery protection circuit, battery charging and discharging circuit and portable electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (7) | CN209250230U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112234689A (en) * | 2020-12-14 | 2021-01-15 | 苏州赛芯电子科技股份有限公司 | Charge-discharge protection circuit and lithium battery protection system |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110445099B (en) * | 2019-08-06 | 2020-10-23 | 苏州赛芯电子科技有限公司 | Semiconductor structure of integrated battery protection circuit and manufacturing process thereof |
| CN110429689A (en) * | 2019-08-28 | 2019-11-08 | 南京微盟电子有限公司 | A kind of Optimal Control System of lithium electric protection chip zero volt battery charger |
| CN111614071B (en) * | 2020-06-19 | 2021-12-21 | 苏州赛芯电子科技股份有限公司 | Single-wafer battery protection circuit, charging and discharging circuit and portable electronic equipment |
| CN111987771B (en) * | 2020-08-27 | 2022-02-22 | 西安稳先半导体科技有限责任公司 | On-chip system, battery pack and electronic device |
| CN111817407B (en) * | 2020-09-09 | 2020-12-08 | 苏州赛芯电子科技有限公司 | Lithium battery driving protection circuit, protection control circuit and protection device |
| CN112152288A (en) * | 2020-09-21 | 2020-12-29 | 深圳市创芯微微电子有限公司 | Battery protection circuit |
| CN111864867B (en) * | 2020-09-22 | 2021-01-15 | 深圳英集芯科技有限公司 | Battery protection control circuit, chip and electronic device |
| CN112039172B (en) * | 2020-11-03 | 2021-01-19 | 苏州赛芯电子科技股份有限公司 | Grid substrate control circuit, lithium battery and protection device for protection chip of lithium battery |
| CN112583079A (en) * | 2020-12-18 | 2021-03-30 | 苏州赛芯电子科技股份有限公司 | Battery protection circuit and device |
| CN112653216A (en) * | 2020-12-18 | 2021-04-13 | 苏州赛芯电子科技股份有限公司 | Battery protection circuit |
| CN112769113A (en) * | 2020-12-22 | 2021-05-07 | 深圳市创芯微微电子有限公司 | Battery protection chip and protection circuit thereof |
| CN112688394A (en) * | 2020-12-28 | 2021-04-20 | 苏州赛芯电子科技股份有限公司 | Lithium battery charging protection circuit and lithium battery |
| CN112821497B (en) * | 2021-01-21 | 2022-12-13 | 苏州赛芯电子科技股份有限公司 | Lithium battery protection system and lithium battery |
| CN115987224B (en) * | 2023-03-20 | 2023-06-27 | 江苏长晶科技股份有限公司 | Circuit for realizing application of low-voltage operational amplifier to high voltage by adopting bootstrap technology |
-
2018
- 2018-12-14 CN CN201822104395.6U patent/CN209250230U/en active Active
- 2018-12-14 CN CN201811536650.2A patent/CN109449891A/en active Pending
-
2019
- 2019-11-01 CN CN201921874738.5U patent/CN212572075U/en active Active
- 2019-11-01 CN CN201921874739.XU patent/CN212543359U/en active Active
- 2019-11-01 CN CN201911061330.0A patent/CN110854832A/en active Pending
- 2019-11-01 CN CN201911060468.9A patent/CN110854831A/en not_active Withdrawn
- 2019-11-01 CN CN201921875670.2U patent/CN212572076U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112234689A (en) * | 2020-12-14 | 2021-01-15 | 苏州赛芯电子科技股份有限公司 | Charge-discharge protection circuit and lithium battery protection system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109449891A (en) | 2019-03-08 |
| CN110854831A (en) | 2020-02-28 |
| CN212543359U (en) | 2021-02-12 |
| CN110854832A (en) | 2020-02-28 |
| CN212572075U (en) | 2021-02-19 |
| CN212572076U (en) | 2021-02-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN209250230U (en) | Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability | |
| CN104600676B (en) | Battery protecting circuit, electric energy provide device and electronic installation | |
| CN203690884U (en) | Overvoltage protection circuit, driver and power supply comprising the same | |
| CN204721079U (en) | Dual-power automatic switching and charging circuit | |
| JP6978597B2 (en) | Charging device and terminal | |
| CN105911458B (en) | A kind of battery analogue circuit | |
| CN102832651A (en) | System and method for battery management used in battery pack | |
| CN103607009B (en) | A kind of charge-discharge circuit with automatic protection functions | |
| CN106300314A (en) | The high voltage protective system and method for Type C interface chip CC pin | |
| CN111614071B (en) | Single-wafer battery protection circuit, charging and discharging circuit and portable electronic equipment | |
| CN103746347A (en) | Battery protection chip and battery system | |
| TWI438995B (en) | Overvoltage protection circuit and portable electronic device having the same | |
| CN107332319A (en) | Battery protecting circuit, battery and terminal | |
| CN109390992A (en) | Battery protection chip, power supply unit and electronic cigarette | |
| CN106058798B (en) | Voltage protection, method and wearable device | |
| CN208257490U (en) | A kind of photovoltaic energy storage device | |
| CN206249131U (en) | Power protecting circuit and supply unit | |
| CN109196751A (en) | A kind of charging unit and terminal | |
| CN208971379U (en) | A kind of anti-overshoot protection circuit | |
| WO2023103825A1 (en) | Battery protection chip, battery system, and battery protection method | |
| CN203850886U (en) | Hybrid floating charge voltage-stabilizing source | |
| CN107370354B (en) | A kind of AC input current Surge suppression system | |
| CN108258762A (en) | A kind of quick-charging circuit and intelligent terminal for pre-installing battery system | |
| CN209250235U (en) | Surge protection circuit, circuit system and electronic equipment | |
| CN104600797B (en) | Battery management circuit and terminal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 33c, modern media Plaza, 265 Suzhou Avenue East, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou, Jiangsu 215128 Patentee after: Suzhou Saixin Electronic Technology Co.,Ltd. Address before: 215021 unit 4b6, international science and Technology Park, 1355 Jinjihu Avenue, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee before: Suzhou Saixin Electronic Technology Co.,Ltd. |