US20030003742A1 - Gas assisted method for applying resist stripper and gas-resist stripper combinations - Google Patents
Gas assisted method for applying resist stripper and gas-resist stripper combinations Download PDFInfo
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- US20030003742A1 US20030003742A1 US10/230,472 US23047202A US2003003742A1 US 20030003742 A1 US20030003742 A1 US 20030003742A1 US 23047202 A US23047202 A US 23047202A US 2003003742 A1 US2003003742 A1 US 2003003742A1
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- resist stripper
- resist
- gas
- semiconductor device
- device structure
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- 238000000034 method Methods 0.000 title abstract description 31
- 239000000126 substance Substances 0.000 claims abstract description 27
- 239000007789 gas Substances 0.000 claims description 63
- 229920002120 photoresistant polymer Polymers 0.000 claims description 40
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 20
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 17
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000001569 carbon dioxide Substances 0.000 claims description 7
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 7
- -1 hydrogen ions Chemical class 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 85
- 239000000758 substrate Substances 0.000 abstract description 15
- 239000012530 fluid Substances 0.000 abstract description 7
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 239000007795 chemical reaction product Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
Definitions
- the present invention relates generally to methods for stripping photoresist from a semiconductor device structure and, in particular, to methods for continuously moving resist stripper across the surface of a semiconductor device structure. More particularly, the present invention relates to resist stripper application methods that include exposing the resist stripper to a gas, to move the resist stripper across the semiconductor device structure, to thin the resist stripper, or to otherwise increase the rate at which the resist stripper removes photoresist from the semiconductor device structure.
- a semiconductor substrate such as a wafer or other large-scale substrate formed from semiconductive material (e.g., silicon, gallium arsenide, or indium phosphide), thereby forming a semiconductor device structure.
- semiconductive material e.g., silicon, gallium arsenide, or indium phosphide
- photomasks are often employed.
- the formation of photomasks involves the use of a photoresist material that takes on a specific pattern as the photoresist material is exposed to radiation, such as one or more visible wavelengths of light, through a reticle. In this manner, the reticle and the radiation transmitted therethrough together define the specific pattern of the photoresist.
- the photoresist is then developed, or cured, so as to maintain the pattern and to form a photomask, which is commonly referred to in the art as a “photoresist” or simply as a “resist.”
- a photomask which is commonly referred to in the art as a “photoresist” or simply as a “resist.”
- one or more underlying material layers may be patterned through the photomask, such as by way of wet or dry etching processes.
- the photomask is typically removed.
- Various processes are known for removing photomasks.
- a thin layer of a resist stripper is applied to the semiconductor device structure, such as by spraying the resist stripper onto the semiconductor device structure.
- a semiconductor device structure bearing a photomask is immersed, or dipped, into a bath of wet chemical resist stripper.
- One type of resist stripper that may be used to remove a photomask from a semiconductor device structure is a wet chemical resist stripper, such as an organic resist stripper (e.g., phenol-based and phenol-free organic strippers) or an oxidizing resist stripper (e.g., solutions of sulfuric acid (H 2 SO 4 ) and an oxidant, such as hydrogen peroxide (H 2 O 2 ) or ammonium persulfate).
- Wet chemical resist strippers typically remove, or dissolve, the photomask with selectivity over (i.e., at a faster rate than) the material of the structures and material layers that underlie and that may be exposed through the photomask or upon removal of the photomask material from the semiconductor device structure.
- Some such wet chemical resist strippers include one or more types of active chemicals that remove photomasks by reacting with the material or materials of the photomasks.
- the concentrations of active chemicals in these wet chemical resist strippers decrease over time, thereby reducing the effectiveness of these resist strippers.
- the rate at which further reactions between the resist stripper and the photoresist may occur and, thus, the rate at which the photoresist is removed from the semiconductor device structure are reduced.
- ozonated water may be used as a resist stripper to remove a photomask from a semiconductor substrate.
- the water is heated to enhance the ability of the ozone dissolved therein to remove a resist layer from a semiconductor substrate.
- the heated, ozonated water may be applied to the resist-covered substrate by spraying.
- ozone effervesces from water relatively quickly.
- ozonated water resist strippers lose their effectiveness over time.
- the rates at which ozonated water resist strippers remove photoresists may be reduced as the concentrations of reaction products increase in the resist stripper.
- ozonated water resist strippers typically remove hard-baked photoresist at a rate of about 4,000 ⁇ per second to less than about 8,000 ⁇ per second.
- the art lacks teaching of methods for introducing one or more gases into or onto a resist stripper to maintain a desired rate for stripping resist from a semiconductor device structure, as well as stripping systems for effecting such methods.
- the present invention includes a method and system for stripping resists from semiconductor substrates while maintaining a desired rate of resist stripping.
- the method of the present invention includes applying a quantity of resist stripper onto a semiconductor device structure and directing at least one carrier fluid, such as a gas other than ozone, toward the resist stripper or forming at least one gas other than ozone in the resist stripper.
- the resist stripper is applied to the semiconductor device structure in a manner that the resist stripper contacts at least a portion of a photomask, or resist, to be removed.
- the resist stripper may be hot ozonated water that includes a concentration sufficient to remove the resist at a desired rate.
- Other types of resist strippers such as wet chemical resist strippers, may also be used in accordance with teachings of the present invention.
- the resist stripper may be applied to at least a portion of the semiconductor device structure by spraying, in a stream, by dipping the semiconductor device structure in the resist stripper, or otherwise, as known in the art.
- the resist stripper may be exposed to one or more gases or other carrier fluids prior to, during, or after application thereof onto a photoresist on the semiconductor device structure.
- the one or more other, non-ozone gases may thin the layer of resist stripper over the semiconductor device structure or move the resist stripper across a surface of the semiconductor device structure, both of which prevent the formation of or eliminate macroscopic drops of resist stripper on the semiconductor device structure.
- the one or more gases may be the product of one or more chemical reactions effected by or in the resist stripper, in which case the one or more gases are formed in the resist stripper. In any event, by exposing the resist stripper to one or more gases or other carrier fluids, the rate at which the resist stripper removes photoresist from the semiconductor device structure is increased.
- one or more gases under pressure such as in a jet or stream of liquid or gas, may be directed at least partially across the surface of the semiconductor device structure so as to force resist stripper across the semiconductor device structure.
- This movement of resist stripper across the surface of the substrate prevents stagnation of the resist stripper and, consequently, prevents a reduction in the rate at which the resist stripper removes the photomask from the semiconductor substrate.
- the one or more gases may be directed across the surface of the semiconductor device structure substantially simultaneously with the resist stripper, either by combining the gas or gases with the resist stripper or separately from the resist stripper. Alternatively, the gas or gases may be directed across the semiconductor device structure after the resist stripper has been applied to the semiconductor device structure. When the one or more gases are directed across the surface of the semiconductor device structure, the one or more gases force the resist stripper to move across the device structure.
- the one or more gases may be directed across the surface of the semiconductor device structure from a central region thereof toward an outer periphery thereof.
- the one or more gases may be directed onto a surface of a semiconductor device structure near a peripheral edge thereof so as to move resist stripper across the semiconductor device structure.
- Application of one or more gases may also be effected in any alternative manner that facilitates the substantially continuous movement of resist stripper across the surface of the semiconductor device structure.
- the one or more gases will preferably not react with (e.g., oxidize or otherwise react with or change the nature of) materials of structures or layers of the semiconductor device structure that are exposed through the photoresist or as the photoresist is removed from the semiconductor device structure.
- Gases that may be used in the method of the present invention include, without limitation, inert gases or gas mixtures, such as nitrogen or noble gases (e.g., argon), air, and gaseous hydrochloric acid.
- the present invention also includes systems for applying resist stripper to semiconductor device structures in a manner that effects the inventive method.
- An example of such a system includes a source of resist stripper, a stripper application component for introducing resist stripper onto a surface of a semiconductor device structure, a gas source, and a gas application component for directing gas at least partially across the surface of the semiconductor device structure so as to move resist stripper across the surface.
- the stripper application and gas application components may be separate from one another or comprise the same component.
- FIG. 1A is a schematic representation of a semiconductor device structure including a photomask with resist stripper applied thereto;
- FIG. 1B is a schematic representation illustrating another method of applying photoresist to a photomask on a semiconductor device structure
- FIGS. 2A and 2B are schematic representations illustrating movement of resist stripper across the surface of the semiconductor device structure by a gas under pressure
- FIG. 3 is a schematic representation of a variation of the use of a gas under pressure to move resist stripper across a semiconductor device structure when the method of the present invention is used;
- FIG. 4 is a schematic representation of the use of gas bubbles in the resist stripper to effect movement of the resist stripper across a semiconductor wafer in accordance with teachings of the present invention
- FIG. 5 is a schematic representation illustrating the alternative, nonhorizontal orientation of a semiconductor device structure as a method according to the present invention is being effected
- FIG. 6 schematically illustrates rotation of a semiconductor device structure as a method according to the present invention is being effected.
- FIGS. 7A and 7B schematically depict systems for effecting methods that incorporate teachings of the present invention.
- FIG. 1A schematically illustrates a semiconductor device structure 10 , in this case a semiconductor wafer, including a photomask 14 over an active surface 12 thereof.
- Photomask 14 is formed from polymerized, or consolidated, photoresist and may be either soft-baked or hard-baked, as known in the art.
- Resist stripper 16 preferably includes ozone (e.g., ozonated water), but may be any other type of resist stripper known and used in the art. Resist stripper 16 may be applied to photomask 14 by known processes, such as by spraying resist stripper 16 onto photomask 14 , as shown in FIG. 1A.
- resist stripper 16 may be applied to photomask 14 by at least partially immersing photomask 14 in a quantity of resist stripper 16 , as illustrated in FIG. 1B. In any event, resist stripper 16 forms a layer 18 over semiconductor device structure 10 and over any photomask 14 on active surface 12 of semiconductor device structure 10 .
- resist stripper 16 is exposed to one or more gases 20 or other, nongaseous carrier fluids, which effect movement of resist stripper 16 across semiconductor device structure 10 or thin layer 18 of resist stripper 16 , as shown in FIGS. 2A and 2B. Both of these effects of exposing resist stripper 16 to gas 20 facilitate the transfer of reaction products of the reaction between resist stripper 16 and the photoresist of photomask 14 away from the location where such a reaction is occurring. For example, as resist stripper 16 is moved laterally across semiconductor device structure 10 , fresh resist stripper 16 that includes little or no reaction products is continuously supplied to locations where resist stripper reacts with the photoresist of photomask 14 .
- reaction products of the reaction between resist stripper 16 and the photoresist of photomask 14 may more readily escape through layer 18 than if layer 18 were thicker, thus permitting the action between resist stripper 16 and the photoresist of photomask 14 to occur at a faster rate than would be possible if higher concentrations of these reaction products were present at the locations where this reaction is occurring.
- Other methods of exposing resist stripper 16 to gas 20 in a manner that may increase the rate at which resist stripper 16 removes photoresist of photomask 14 from semiconductor device structure 10 are also within the scope of the present invention.
- a quantity of gas 20 such as nitrogen, air, or gaseous hydrochloric acid, or another, nongaseous carrier fluid, is directed under pressure (either positive (FIG. 2A) or negative (FIG. 2B)) at least partially across layer 18 .
- Gas 20 does not include ozone.
- gas 20 may be directed toward layer 18 in a pressurized jet 30 .
- Pressurized jet 30 may be directed toward layer 18 from substantially the same location as that from which resist stripper 16 is introduced over semiconductor device structure 10 , as shown in FIG. 3, or from a different location than that from which resist stripper 16 is directed over semiconductor device structure 10 , as depicted in FIG. 2A.
- gas 20 may alternatively be directed across layer 18 of resist stripper 16 in the form of bubbles 32 on the surface of or residing within layer 18 .
- the movement of bubbles 32 across layer 18 may effect the substantially continuous movement of resist stripper 16 over semiconductor device structure 10 .
- products of the reaction between resist stripper 16 and the photoresist of photomask 14 may be carried by bubbles 32 away from the locations in which said photoresist removal reactions are occurring.
- bubbles 32 may move layer 18 across semiconductor device structure 10 as bubbles 32 flow therethrough. Both of these effects of bubbles 32 facilitate the passage of products of the reaction between resist stripper 16 and the photoresist of photomask 14 away from the locations in which this reaction is occurring, thereby increasing the overall reaction rate.
- FIG. 5 depicts the nonhorizontal orientation of a semiconductor device structure 10 .
- gravity further facilitates thinning of layer 18 and movement of resist stripper 16 in layer 18 over semiconductor device structure 10 .
- semiconductor device structure 10 remains substantially stationary as the method of the present invention is being effected.
- existing automated wet bench equipment may be used to conduct the method of the present invention.
- a semiconductor device structure 10 may be rotated in a plane thereof to further effect thinning of layer 18 and movement of resist stripper 16 in layer 18 over semiconductor device structure 10 by centrifugal force. Again, the additional thinning and movement of layer 18 provided by such rotation further accelerate the rate at which resist stripper 16 removes the material or materials of photomask 14 from semiconductor device structure 10 .
- Gas 20 to which layer 18 is exposed may itself increase the rate with which resist stripper 16 removes the material or materials of photomask 14 from semiconductor device structure 10 or otherwise enhances the removal of photomask 14 by resist stripper 16 .
- Chemicals or chemical mixtures that form gas bubbles in layer 18 may also increase the rate at which the resist stripper 16 of layer 18 removes the photoresist of photomask 14 by action of the bubbles, as discussed previously herein with reference to FIG. 4, or by causing the formation of gaseous products as resist stripper 16 reacts with the photoresist, which products form and are carried away in bubbles.
- hydrochloric acid decreases the pH of resist stripper 16 and increases the concentration of ozone in resist stripper 16 , while decreasing the concentration in resist stripper 16 of carbonic acid (H 2 CO 3 ), which is a product of the reaction between an ozonated resist stripper 16 and a photoresist.
- hydrochloric acid increases, which forces the carbonic acid in resist stripper 16 to be broken up into carbon dioxide (CO 2 ) gas and water (H 2 O) rather than into carbonate ions (CO 3 ⁇ ) and hydrogen ions (H + ).
- CO 2 carbon dioxide
- H 2 O carbonate ions
- H + hydrogen ions
- Carbon dioxide readily diffuses, effervesces, or bubbles out of resist stripper 16 , away from the reaction between resist stripper 16 and the photoresist of photomask 14 , and will, therefore, not increase in concentration in the presence of the reaction or decrease the rate at which this reaction occurs.
- the formation of carbonic acid which is an ion that tends to remain dissolved in resist stripper 16 , is reduced.
- carbonic acid concentrations will not increase as rapidly as if the hydrogen ions from hydrochloric acid were not present and, as a result, the rate at which resist stripper 16 reacts with the photoresist of photomask 14 is not significantly decreased.
- the direction of one or more gases 20 toward layer 18 may be effected by introducing either gaseous or liquid hydrochloric acid into layer 18 .
- the rate at which resist stripper 16 removes the material or materials of photomask 14 may be increased without actually moving layer 18 or thinning layer 18 .
- FIG. 7A illustrates an exemplary resist stripping system 40 for effecting the stripping method of the present invention.
- Resist stripping system 40 includes a wafer support 42 , upon which a semiconductor device structure 10 having photoresist thereon is positioned.
- Wafer support 42 may be configured to orient a semiconductor device structure 10 positioned thereon nonhorizontally.
- Wafer support 42 may also be configured to rotate a semiconductor device structure 10 positioned thereon.
- a stripper applicator 44 of resist stripping system 40 obtains resist stripper 16 from a source 46 and applies resist stripper 16 to a photomask 14 on a semiconductor device structure 10 disposed on wafer support 42 .
- Resist stripping system 40 also includes a gas source 48 , from which gas 20 is supplied and which communicates with a gas output element 50 that directs gas 20 toward wafer support 42 so as to effect the direction of gas 20 at least partially toward resist stripper 16 or to otherwise expose resist stripper 16 to gas 20 .
- a resist stripping system 40 ′ may include a chemical output element 54 to which directs a chemical 56 , such as hydrochloric acid, from a chemical source 52 toward wafer support 42 so as to expose resist stripper 16 on a semiconductor device structure 10 positioned on wafer support 42 to chemical 56 and to induce the formation of gas bubbles 32 (FIG. 4) in resist stripper 16 .
- a chemical 56 such as hydrochloric acid
- the rates with which these ozonated strippers 16 remove hard-baked photoresists are at least about 8,000 angstroms per second up to about 12,000 angstroms per second and greater, as compared with conventional resist stripping methods employing ozonated resist strippers, which remove hard-baked photoresists at much slower rates. While the methods of the present invention are particularly useful for increasing the rates with which ozonated resist strippers 16 remove photoresists, the teachings of the present invention may also be employed to increase the rates with which other types of resist strippers remove photoresists.
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
A method for moving resist stripper across the surface of a semiconductor substrate. The method includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor substrate. A carrier fluid, such as a gas, is then directed toward the semiconductor substrate so as to move the resist stripper across the substrate. The carrier fluid may be directed toward the substrate as the resist stripper is being applied thereto or following application of the resist stripper. A system for effecting the method is also disclosed.
Description
- This application is a divisional of application Ser. No. 10/165,261, filed Jun. 6, 2002, pending, which is a divisional of application Ser. No. 09/639,550, filed Aug. 16, 2000, now U.S. Pat. No. 6,440,871, issued Aug. 27, 2002.
- 1. Field of the Invention
- The present invention relates generally to methods for stripping photoresist from a semiconductor device structure and, in particular, to methods for continuously moving resist stripper across the surface of a semiconductor device structure. More particularly, the present invention relates to resist stripper application methods that include exposing the resist stripper to a gas, to move the resist stripper across the semiconductor device structure, to thin the resist stripper, or to otherwise increase the rate at which the resist stripper removes photoresist from the semiconductor device structure.
- 2. Background of Related Art
- In fabricating semiconductor devices, several material layers, including electrically conductive and insulative layers, are formed and patterned to build various structures upon an active surface of a semiconductor substrate, such as a wafer or other large-scale substrate formed from semiconductive material (e.g., silicon, gallium arsenide, or indium phosphide), thereby forming a semiconductor device structure.
- The material layers formed over a semiconductor substrate are typically patterned by forming masks thereover. Photomasks are often employed. The formation of photomasks involves the use of a photoresist material that takes on a specific pattern as the photoresist material is exposed to radiation, such as one or more visible wavelengths of light, through a reticle. In this manner, the reticle and the radiation transmitted therethrough together define the specific pattern of the photoresist. The photoresist is then developed, or cured, so as to maintain the pattern and to form a photomask, which is commonly referred to in the art as a “photoresist” or simply as a “resist.” Once the photomask has been formed, one or more underlying material layers may be patterned through the photomask, such as by way of wet or dry etching processes.
- After one or more layers underlying a photomask have been patterned through the photomask to form a semiconductor device structure, the photomask is typically removed. Various processes are known for removing photomasks. Typically, a thin layer of a resist stripper is applied to the semiconductor device structure, such as by spraying the resist stripper onto the semiconductor device structure. Alternatively, a semiconductor device structure bearing a photomask is immersed, or dipped, into a bath of wet chemical resist stripper.
- One type of resist stripper that may be used to remove a photomask from a semiconductor device structure is a wet chemical resist stripper, such as an organic resist stripper (e.g., phenol-based and phenol-free organic strippers) or an oxidizing resist stripper (e.g., solutions of sulfuric acid (H2SO4) and an oxidant, such as hydrogen peroxide (H2O2) or ammonium persulfate). Wet chemical resist strippers typically remove, or dissolve, the photomask with selectivity over (i.e., at a faster rate than) the material of the structures and material layers that underlie and that may be exposed through the photomask or upon removal of the photomask material from the semiconductor device structure. Some such wet chemical resist strippers include one or more types of active chemicals that remove photomasks by reacting with the material or materials of the photomasks. Thus, the concentrations of active chemicals in these wet chemical resist strippers decrease over time, thereby reducing the effectiveness of these resist strippers. Moreover, as the concentrations of reaction products increase in locations where further stripping is desired, the rate at which further reactions between the resist stripper and the photoresist may occur and, thus, the rate at which the photoresist is removed from the semiconductor device structure, are reduced.
- As another example, ozonated water may be used as a resist stripper to remove a photomask from a semiconductor substrate. Typically, the water is heated to enhance the ability of the ozone dissolved therein to remove a resist layer from a semiconductor substrate. The heated, ozonated water may be applied to the resist-covered substrate by spraying. As those of skill in the art are aware, ozone effervesces from water relatively quickly. Thus, ozonated water resist strippers lose their effectiveness over time. In addition, as with other types of resist strippers, the rates at which ozonated water resist strippers remove photoresists may be reduced as the concentrations of reaction products increase in the resist stripper.
- Conventional processes for applying resist strippers to resist, such as spraying or immersion, do not facilitate continuous movement of the resist strippers across the semiconductor device structure following application and may, therefore, permit the resist strippers to sit, or stagnate, on the resist. Stagnation of resist strippers is somewhat undesirable, however, as the concentrations of reaction products may increase during stagnation and stagnation may, therefore, reduce the rate at which the resist strippers remove photomasks from semiconductor device structures. In addition, when a wet etchant is employed as the resist stripper, the active chemical reactant or reactants of the resist stripper may react with the photomask and, therefore, decrease in concentration. As a result, in a stagnant area, the rate at which such a wet etchant resist stripper removes the photomask and, thus, the ability of such a wet etchant resist stripper to remove the photomask, decreases over time.
- In the ozonated water example of a resist stripper, when the resist stripper is at rest, ozone escapes from the water into the atmosphere over time. As the concentration of ozone in the ozonated water resist stripper decreases, the effectiveness of the resist stripper, as well as the rate at which a photomask is removed from a semiconductor substrate therewith, are reduced.
- When conventional stripping methods are employed, ozonated water resist strippers typically remove hard-baked photoresist at a rate of about 4,000 Å per second to less than about 8,000 Å per second.
- The art lacks teaching of methods for introducing one or more gases into or onto a resist stripper to maintain a desired rate for stripping resist from a semiconductor device structure, as well as stripping systems for effecting such methods.
- The present invention includes a method and system for stripping resists from semiconductor substrates while maintaining a desired rate of resist stripping. The method of the present invention includes applying a quantity of resist stripper onto a semiconductor device structure and directing at least one carrier fluid, such as a gas other than ozone, toward the resist stripper or forming at least one gas other than ozone in the resist stripper.
- The resist stripper is applied to the semiconductor device structure in a manner that the resist stripper contacts at least a portion of a photomask, or resist, to be removed. For example, the resist stripper may be hot ozonated water that includes a concentration sufficient to remove the resist at a desired rate. Other types of resist strippers, such as wet chemical resist strippers, may also be used in accordance with teachings of the present invention. The resist stripper may be applied to at least a portion of the semiconductor device structure by spraying, in a stream, by dipping the semiconductor device structure in the resist stripper, or otherwise, as known in the art.
- The resist stripper may be exposed to one or more gases or other carrier fluids prior to, during, or after application thereof onto a photoresist on the semiconductor device structure. The one or more other, non-ozone gases may thin the layer of resist stripper over the semiconductor device structure or move the resist stripper across a surface of the semiconductor device structure, both of which prevent the formation of or eliminate macroscopic drops of resist stripper on the semiconductor device structure. Alternatively, the one or more gases may be the product of one or more chemical reactions effected by or in the resist stripper, in which case the one or more gases are formed in the resist stripper. In any event, by exposing the resist stripper to one or more gases or other carrier fluids, the rate at which the resist stripper removes photoresist from the semiconductor device structure is increased.
- As an example of the manner in which resist stripper may be moved across the surface of the semiconductor device structure, one or more gases under pressure, such as in a jet or stream of liquid or gas, may be directed at least partially across the surface of the semiconductor device structure so as to force resist stripper across the semiconductor device structure. This movement of resist stripper across the surface of the substrate prevents stagnation of the resist stripper and, consequently, prevents a reduction in the rate at which the resist stripper removes the photomask from the semiconductor substrate.
- The one or more gases may be directed across the surface of the semiconductor device structure substantially simultaneously with the resist stripper, either by combining the gas or gases with the resist stripper or separately from the resist stripper. Alternatively, the gas or gases may be directed across the semiconductor device structure after the resist stripper has been applied to the semiconductor device structure. When the one or more gases are directed across the surface of the semiconductor device structure, the one or more gases force the resist stripper to move across the device structure.
- The one or more gases may be directed across the surface of the semiconductor device structure from a central region thereof toward an outer periphery thereof. Alternatively, the one or more gases may be directed onto a surface of a semiconductor device structure near a peripheral edge thereof so as to move resist stripper across the semiconductor device structure. Application of one or more gases may also be effected in any alternative manner that facilitates the substantially continuous movement of resist stripper across the surface of the semiconductor device structure.
- The one or more gases will preferably not react with (e.g., oxidize or otherwise react with or change the nature of) materials of structures or layers of the semiconductor device structure that are exposed through the photoresist or as the photoresist is removed from the semiconductor device structure. Gases that may be used in the method of the present invention include, without limitation, inert gases or gas mixtures, such as nitrogen or noble gases (e.g., argon), air, and gaseous hydrochloric acid.
- The present invention also includes systems for applying resist stripper to semiconductor device structures in a manner that effects the inventive method. An example of such a system includes a source of resist stripper, a stripper application component for introducing resist stripper onto a surface of a semiconductor device structure, a gas source, and a gas application component for directing gas at least partially across the surface of the semiconductor device structure so as to move resist stripper across the surface. The stripper application and gas application components may be separate from one another or comprise the same component.
- Other features and advantages of the present invention will become apparent to those of skill in the art through consideration of the ensuing description, the accompanying drawings, and the appended claims.
- FIG. 1A is a schematic representation of a semiconductor device structure including a photomask with resist stripper applied thereto;
- FIG. 1B is a schematic representation illustrating another method of applying photoresist to a photomask on a semiconductor device structure;
- FIGS. 2A and 2B are schematic representations illustrating movement of resist stripper across the surface of the semiconductor device structure by a gas under pressure;
- FIG. 3 is a schematic representation of a variation of the use of a gas under pressure to move resist stripper across a semiconductor device structure when the method of the present invention is used;
- FIG. 4 is a schematic representation of the use of gas bubbles in the resist stripper to effect movement of the resist stripper across a semiconductor wafer in accordance with teachings of the present invention;
- FIG. 5 is a schematic representation illustrating the alternative, nonhorizontal orientation of a semiconductor device structure as a method according to the present invention is being effected;
- FIG. 6 schematically illustrates rotation of a semiconductor device structure as a method according to the present invention is being effected; and
- FIGS. 7A and 7B schematically depict systems for effecting methods that incorporate teachings of the present invention.
- FIG. 1A schematically illustrates a
semiconductor device structure 10, in this case a semiconductor wafer, including aphotomask 14 over anactive surface 12 thereof.Photomask 14 is formed from polymerized, or consolidated, photoresist and may be either soft-baked or hard-baked, as known in the art. Resiststripper 16 preferably includes ozone (e.g., ozonated water), but may be any other type of resist stripper known and used in the art. Resiststripper 16 may be applied tophotomask 14 by known processes, such as by spraying resiststripper 16 ontophotomask 14, as shown in FIG. 1A. As an alternative, resiststripper 16 may be applied tophotomask 14 by at least partially immersingphotomask 14 in a quantity of resiststripper 16, as illustrated in FIG. 1B. In any event, resiststripper 16 forms alayer 18 oversemiconductor device structure 10 and over anyphotomask 14 onactive surface 12 ofsemiconductor device structure 10. - In order to effect the method of the present invention, resist
stripper 16 is exposed to one ormore gases 20 or other, nongaseous carrier fluids, which effect movement of resiststripper 16 acrosssemiconductor device structure 10 orthin layer 18 of resiststripper 16, as shown in FIGS. 2A and 2B. Both of these effects of exposing resiststripper 16 togas 20 facilitate the transfer of reaction products of the reaction between resiststripper 16 and the photoresist ofphotomask 14 away from the location where such a reaction is occurring. For example, as resiststripper 16 is moved laterally acrosssemiconductor device structure 10, fresh resiststripper 16 that includes little or no reaction products is continuously supplied to locations where resist stripper reacts with the photoresist ofphotomask 14. As another example, by thinninglayer 18 of resiststripper 16, reaction products of the reaction between resiststripper 16 and the photoresist ofphotomask 14 may more readily escape throughlayer 18 than iflayer 18 were thicker, thus permitting the action between resiststripper 16 and the photoresist ofphotomask 14 to occur at a faster rate than would be possible if higher concentrations of these reaction products were present at the locations where this reaction is occurring. Other methods of exposing resiststripper 16 togas 20 in a manner that may increase the rate at which resiststripper 16 removes photoresist ofphotomask 14 fromsemiconductor device structure 10 are also within the scope of the present invention. - Turning again to FIGS. 2A and 2B, as an example of a way in which resist
stripper 16 may be exposed to one ormore gases 20, a quantity ofgas 20, such as nitrogen, air, or gaseous hydrochloric acid, or another, nongaseous carrier fluid, is directed under pressure (either positive (FIG. 2A) or negative (FIG. 2B)) at least partially acrosslayer 18.Gas 20 does not include ozone. By directinggas 20 at least partially acrosslayer 18, resiststripper 16 oflayer 18 is moved acrosssemiconductor device structure 10 in a plane substantially parallel to the plane ofsemiconductor device structure 10, such as in the directions ofarrows 22. In this manner, products of the chemical reaction between the ozone of resiststripper 16 and the material or materials ofphotomask 14 are continuously moved away fromphotomask 14, thereby facilitating subsequent reactions between the ozone of resiststripper 16 and the photoresist ofphotomask 14, as well as the removal of photoresist fromsemiconductor device structure 10, to proceed at a faster rate. In addition, by directing one ormore gases 20 at least partially acrosslayer 18, the thickness oflayer 18 may be reduced, which permits reactants of the reaction between the ozone of resiststripper 16 and the photoresist ofphotomask 14 to more readily pass throughlayer 18 and disperse. - As shown in FIGS. 2A and 3,
gas 20 may be directed towardlayer 18 in apressurized jet 30.Pressurized jet 30 may be directed towardlayer 18 from substantially the same location as that from which resiststripper 16 is introduced oversemiconductor device structure 10, as shown in FIG. 3, or from a different location than that from which resiststripper 16 is directed oversemiconductor device structure 10, as depicted in FIG. 2A. - With reference to FIG. 4,
gas 20 may alternatively be directed acrosslayer 18 of resiststripper 16 in the form ofbubbles 32 on the surface of or residing withinlayer 18. The movement ofbubbles 32 acrosslayer 18 may effect the substantially continuous movement of resiststripper 16 oversemiconductor device structure 10. As bubbles 32 move throughlayer 18, products of the reaction between resiststripper 16 and the photoresist ofphotomask 14 may be carried bybubbles 32 away from the locations in which said photoresist removal reactions are occurring. In addition, bubbles 32 may movelayer 18 acrosssemiconductor device structure 10 asbubbles 32 flow therethrough. Both of these effects ofbubbles 32 facilitate the passage of products of the reaction between resiststripper 16 and the photoresist ofphotomask 14 away from the locations in which this reaction is occurring, thereby increasing the overall reaction rate. - FIG. 5 depicts the nonhorizontal orientation of a
semiconductor device structure 10. Whensemiconductor device structure 10 is nonhorizontally oriented, gravity further facilitates thinning oflayer 18 and movement of resiststripper 16 inlayer 18 oversemiconductor device structure 10. - Preferably,
semiconductor device structure 10 remains substantially stationary as the method of the present invention is being effected. Thus, existing automated wet bench equipment may be used to conduct the method of the present invention. - As another alternative, which is illustrated in FIG. 6, a
semiconductor device structure 10 may be rotated in a plane thereof to further effect thinning oflayer 18 and movement of resiststripper 16 inlayer 18 oversemiconductor device structure 10 by centrifugal force. Again, the additional thinning and movement oflayer 18 provided by such rotation further accelerate the rate at which resiststripper 16 removes the material or materials ofphotomask 14 fromsemiconductor device structure 10. -
Gas 20 to whichlayer 18 is exposed may itself increase the rate with which resiststripper 16 removes the material or materials ofphotomask 14 fromsemiconductor device structure 10 or otherwise enhances the removal ofphotomask 14 by resiststripper 16. Chemicals or chemical mixtures that form gas bubbles inlayer 18 may also increase the rate at which the resiststripper 16 oflayer 18 removes the photoresist ofphotomask 14 by action of the bubbles, as discussed previously herein with reference to FIG. 4, or by causing the formation of gaseous products as resiststripper 16 reacts with the photoresist, which products form and are carried away in bubbles. For example, hydrochloric acid decreases the pH of resiststripper 16 and increases the concentration of ozone in resiststripper 16, while decreasing the concentration in resiststripper 16 of carbonic acid (H2CO3), which is a product of the reaction between an ozonated resiststripper 16 and a photoresist. In addition, by adding hydrochloric acid to resiststripper 16, the concentration of hydrogen ions in resiststripper 16 increases, which forces the carbonic acid in resiststripper 16 to be broken up into carbon dioxide (CO2) gas and water (H2O) rather than into carbonate ions (CO3 −) and hydrogen ions (H+). As a result, more carbon dioxide, which is a gas, is formed. Carbon dioxide readily diffuses, effervesces, or bubbles out of resiststripper 16, away from the reaction between resiststripper 16 and the photoresist ofphotomask 14, and will, therefore, not increase in concentration in the presence of the reaction or decrease the rate at which this reaction occurs. Correspondingly, the formation of carbonic acid, which is an ion that tends to remain dissolved in resiststripper 16, is reduced. Thus, carbonic acid concentrations will not increase as rapidly as if the hydrogen ions from hydrochloric acid were not present and, as a result, the rate at which resiststripper 16 reacts with the photoresist ofphotomask 14 is not significantly decreased. As directing hydrochloric acid towardlayer 18 of resiststripper 16 increases the formation of carbon dioxide gas in resiststripper 16, the direction of one ormore gases 20 towardlayer 18 may be effected by introducing either gaseous or liquid hydrochloric acid intolayer 18. In addition, when hydrochloric acid is used, the rate at which resiststripper 16 removes the material or materials ofphotomask 14 may be increased without actually movinglayer 18 or thinninglayer 18. - FIG. 7A illustrates an exemplary resist stripping
system 40 for effecting the stripping method of the present invention. Resist strippingsystem 40 includes awafer support 42, upon which asemiconductor device structure 10 having photoresist thereon is positioned.Wafer support 42 may be configured to orient asemiconductor device structure 10 positioned thereon nonhorizontally.Wafer support 42 may also be configured to rotate asemiconductor device structure 10 positioned thereon. Astripper applicator 44 of resist strippingsystem 40 obtains resiststripper 16 from asource 46 and applies resiststripper 16 to aphotomask 14 on asemiconductor device structure 10 disposed onwafer support 42. Resist strippingsystem 40 also includes agas source 48, from whichgas 20 is supplied and which communicates with agas output element 50 that directsgas 20 towardwafer support 42 so as to effect the direction ofgas 20 at least partially toward resiststripper 16 or to otherwise expose resiststripper 16 togas 20. - Alternatively, as shown in FIG. 7B, a resist stripping
system 40′ incorporating teachings of the present invention may include achemical output element 54 to which directs a chemical 56, such as hydrochloric acid, from achemical source 52 towardwafer support 42 so as to expose resiststripper 16 on asemiconductor device structure 10 positioned onwafer support 42 tochemical 56 and to induce the formation of gas bubbles 32 (FIG. 4) in resiststripper 16. - When methods incorporating teachings of the present invention are employed, the rates with which these
ozonated strippers 16 remove hard-baked photoresists are at least about 8,000 angstroms per second up to about 12,000 angstroms per second and greater, as compared with conventional resist stripping methods employing ozonated resist strippers, which remove hard-baked photoresists at much slower rates. While the methods of the present invention are particularly useful for increasing the rates with which ozonated resiststrippers 16 remove photoresists, the teachings of the present invention may also be employed to increase the rates with which other types of resist strippers remove photoresists. - Although the foregoing description contains many specifics, these should not be construed as limiting the scope of the present invention, but merely as providing illustrations of some of the presently preferred embodiments. Similarly, other embodiments of the invention may be devised which do not depart from the spirit or scope of the present invention. Features from different embodiments may be employed in combination. The scope of the invention is, therefore, indicated and limited only by the appended claims and their legal equivalents, rather than by the foregoing description. All additions, deletions and modifications to the invention as disclosed herein which fall within the meaning and scope of the claims are to be embraced thereby.
Claims (15)
1. In combination, a resist stripper including a gaseous component comprising ozone and at least one chemical that causes the formation of a gas in said resist stripper.
2. The combination of claim 1 , wherein the formation of said gas effects movement of said resist stripper.
3. The combination of claim 1 , wherein said at least one chemical reacts with a photoresist to form said gas.
4. The combination of claim 3 , wherein said at least one chemical comprises hydrochloric acid.
5. The combination of claim 4 , wherein said hydrogen ions from said hydrochloric acid react with a product of a reaction between said ozone and said photoresist to form at least some of said gas.
6. The combination of claim 4 , wherein said gas comprises carbon dioxide.
7. The combination of claim 1 , wherein said resist stripper and said at least one chemical are together formulated to remove a hard-baked resist at a rate of at least about 8,000 angstroms per second.
8. The combination of claim 1 , wherein said resist stripper and said at least one chemical are together formulated to remove a hard-baked resist at a rate of about 8,000 to about 12,000 angstroms per second.
9. In combination, a resist stripper including a gaseous component comprising ozone and at least one chemical that reacts with a resist to cause the formation of a gas in said resist stripper.
10. The combination of claim 9 , wherein the formation of said gas effects movement of said resist stripper.
11. The combination of claim 9 , wherein said at least one chemical comprises hydrochloric acid.
12. The combination of claim 9 , wherein a product of a reaction between said ozone and said resist reacts with ions of said at least one chemical to form at least a portion of said gas.
13. The combination of claim 9 , wherein said gas comprises carbon dioxide.
14. The combination of claim 9 , wherein said resist stripper and said at least one chemical are together formulated to remove a hard-baked resist at a rate of at least about 8,000 angstroms per second.
15. The combination of claim 9 , wherein said resist stripper and said at least one chemical are together formulated to remove a hard-baked resist at a rate of about 8,000 to about 12,000 angstroms per second.
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US10/230,472 US20030003742A1 (en) | 2000-08-16 | 2002-08-29 | Gas assisted method for applying resist stripper and gas-resist stripper combinations |
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US10/230,472 US20030003742A1 (en) | 2000-08-16 | 2002-08-29 | Gas assisted method for applying resist stripper and gas-resist stripper combinations |
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US11/711,304 Abandoned US20070158302A1 (en) | 2000-08-16 | 2007-02-27 | Systems and methods for gas assisted resist removal |
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US6440871B1 (en) * | 2000-08-16 | 2002-08-27 | Micron Technology, Inc. | Gas assisted method for applying resist stripper and gas-resist stripper combinations |
US20080011322A1 (en) * | 2006-07-11 | 2008-01-17 | Frank Weber | Cleaning systems and methods |
JP2011520142A (en) * | 2008-05-01 | 2011-07-14 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | Low pH mixture for removal of high density implanted resist |
CN101794089B (en) * | 2010-04-12 | 2012-06-13 | 常州瑞择微电子科技有限公司 | Resist removing method of electron beam resist optical mask plate and device thereof |
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2002
- 2002-06-06 US US10/164,431 patent/US6852642B2/en not_active Expired - Lifetime
- 2002-06-06 US US10/165,261 patent/US6576561B2/en not_active Expired - Lifetime
- 2002-07-08 US US10/191,702 patent/US6750154B2/en not_active Expired - Lifetime
- 2002-08-29 US US10/230,472 patent/US20030003742A1/en not_active Abandoned
- 2002-08-29 US US10/230,838 patent/US7189305B2/en not_active Expired - Fee Related
-
2003
- 2003-06-10 US US10/458,454 patent/US6800560B2/en not_active Expired - Lifetime
-
2005
- 2005-01-13 US US11/034,903 patent/US7276449B2/en not_active Expired - Lifetime
-
2007
- 2007-02-27 US US11/711,304 patent/US20070158302A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
US20020177262A1 (en) | 2002-11-28 |
US20070158302A1 (en) | 2007-07-12 |
US6800560B2 (en) | 2004-10-05 |
US20050118831A1 (en) | 2005-06-02 |
US20020155715A1 (en) | 2002-10-24 |
US20030211749A1 (en) | 2003-11-13 |
US7189305B2 (en) | 2007-03-13 |
US20020195200A1 (en) | 2002-12-26 |
US6576561B2 (en) | 2003-06-10 |
US7276449B2 (en) | 2007-10-02 |
US6750154B2 (en) | 2004-06-15 |
US20020151185A1 (en) | 2002-10-17 |
US6852642B2 (en) | 2005-02-08 |
US6440871B1 (en) | 2002-08-27 |
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