US20020097942A1 - Optical devices - Google Patents

Optical devices Download PDF

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Publication number
US20020097942A1
US20020097942A1 US09/788,988 US78898801A US2002097942A1 US 20020097942 A1 US20020097942 A1 US 20020097942A1 US 78898801 A US78898801 A US 78898801A US 2002097942 A1 US2002097942 A1 US 2002097942A1
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United States
Prior art keywords
optically active
optically
active device
region
output end
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Abandoned
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US09/788,988
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English (en)
Inventor
Craig Hamilton
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University of Glasgow
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Individual
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Assigned to UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW, THE reassignment UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW, THE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HAMILTON, CRAIG JAMES
Publication of US20020097942A1 publication Critical patent/US20020097942A1/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion

Definitions

  • This invention relates to optical devices, and in particular, though not exclusively, to optical active or optoelectronic devices such as lasers, modulators, amplifiers, switches, and the like.
  • edge emitting semiconductor laser devices or other edge input/output semiconductor optoelectronic devices are fabricated on a III-V semiconductor wafer, it is desirable to align input or output facets of the device perpendicular to or parallel with a wafer crystal cleavage plane. Often such alignment is not performed exactly, and typically there is an offset angle between a pattern of devices formed on the wafer and a cleavage plane adjacent the facets. This effect is termed “run-out”, and has an impact on the device yield from a wafer.
  • Random-out can be understood to be a distance accumulated by the cleavage crystal plane away from the pattern of devices fabricated on the wafer. It impacts on the yield of devices from a given wafer since the cleave will note be in the same place for all devices along the cleave. This is a significant problem as the device facets so formed will not match-up as intended to where the contact pattern on the device is formed. However, to ensure the intended operation of each device, the active regions thereof (ie where one of the contacts is located) must operate in the designed fashion.
  • an optically active device comprising:
  • an optically passive region extending from said input/output end of the optically active region to an input/output end of the device.
  • the optically active region includes an electrical contact, an end of the electrical contact being spaced from the input/output end of the device.
  • the optically active device includes an optical waveguide, such as a ridge waveguide, formed over the optically active region and the optically passive region(s).
  • an optical waveguide such as a ridge waveguide
  • the electrical contact is provided on a portion of the waveguide, the portion comprising or being included within the optically active region.
  • the optically active device may be selected from a laser device, eg a laser diode, an optical modulator, an optical amplifier, an optical switch, or the like.
  • an optically active device comprising:
  • an optically passive region extending from said output end of the optically active region to an output end of the device
  • This first embodiment is particularly suited to semiconductor laser diodes.
  • an optically active device comprising:
  • an optically active region having an input end and an output end
  • a second optically passive region extending from said output end of the optically active region to an output end of the device.
  • the optically active device is a semiconductor device preferably fabricated in a III-V materials system such as Gallium Arsenide (GaAs), eg working substantially in a wavelength range 600-1300 nm, or Indium Phosphide (InP), eg working substantially in a wavelength range 1200 to 1700 nm.
  • GaAs Gallium Arsenide
  • InP Indium Phosphide
  • the material may be AlGaAs or InGaAsP.
  • the/one of the optically passive region(s) is at an output(s) of the optically active device.
  • the semiconductor device may be of a monolithic construction.
  • the semiconductor device may be grown or otherwise formed on a substrate.
  • the semiconductor device comprises an active core layer sandwiched between a first (or lower) optical cladding/charge carrier confining layer and a second (or upper) optical cladding/charge carrier confining layer.
  • the core layer and cladding layers may together form a slab waveguide.
  • the semiconductor device may include a ridge (or rib) formed in at least the second cladding layer which ridge may act, in use, as the optical waveguide so as to laterally confine an optical mode in the semiconductor device.
  • the active core layer may comprise a lasing material which may comprise or include a Quantum Well (QW) structure being configured as the optically active region, the optically active region being confined by the ridge.
  • QW Quantum Well
  • The/each at least one optically passive region may be as laterally extensive as the optically active region.
  • the optically passive region(s) may include a first compositionally disordered material within the core layer.
  • the optically active region may be laterally bounded by lateral regions including a second compositionally disordered material within the core layer.
  • the QWI technique may be substantially impurity free.
  • the QWI regions may be “blueshifted”, that is, typically at least 20 to 30 meV, and likely around 100 meV or more difference exists between the band-gaps of the optically active region pumped with current, and the QWI optically passive region(s).
  • the optically passive regions may have a higher band-gap energy and therefore a lower absorption than the optically active region.
  • the optically passive region(s) limit heat dissipation at end(s) of the device body.
  • the passive regions may be around 10 to 100 ⁇ m in length.
  • a wafer of material having formed thereon at least one and preferably a plurality of optically active devices, the/each optically active device comprising:
  • an optically passive region extending from said input/output end of the optically active region to an input/output end of the device.
  • At least some of the optically active devices may be formed on said wafer in a substantially lateral relation one to the other.
  • optically active devices may be formed on said wafer in a substantially longitudinal relation one to the other.
  • an optically active device when cleaved from a wafer of material according to the second aspect of the present invention.
  • a method of manufacturing at least one optically active device comprising the steps of:
  • an optically active region having an input/output end
  • an optically passive region extending from said input/output end of the optically active region to an input/output end of the device
  • (c) cleaving the/each optically active device from said wafer including the step of cleaving the wafer at a wafer material cleavage plane(s) adjacent to or substantially coincident with the input end and/or output end of the optically active device.
  • Step (a) may include the step of:
  • an optically active or core layer (which may comprise an optically and electrically active layer, in which is optionally formed a quantum well (QW) structure); and
  • a second optical cladding/charge carrier confining layer [0052] a second optical cladding/charge carrier confining layer.
  • Step (b) may include for each device:
  • the first cladding layer, optically active layer and second cladding layer may be grown by known techniques such as Molecular Beam Epitaxy (MBE) or Metal Organic Chemical Vapour Deposition (MOCVD).
  • MBE Molecular Beam Epitaxy
  • MOCVD Metal Organic Chemical Vapour Deposition
  • the passive region(s) may be formed by a Quantum Well Intermixing (QWI) technique which preferably comprises generating vacancies in the passive regions, or may alternatively comprise implanting or diffusing ions into the passive region(s), and further comprises annealing to create a compositionally disordered region(s) of the optically active layer (which may comprise a lasing material), having a larger band-gap than Quantum Well structure.
  • QWI Quantum Well Intermixing
  • the ridge may be formed by known etching techniques, eg dry or wet etching.
  • the first cladding layer may be formed on a substrate.
  • the optically passive regions may be formed by generating impurity free vacancies and more preferably may use a damage induced technique to achieve Quantum Well Intermixing.
  • the method may include the steps of:
  • PECVD Plasma Enhanced Chemical Vapour Deposition
  • the method may include the step of applying first and second contact layers on a surface of the first cladding layer or more preferably, an outer surface of the substrate, and an outer surface of the ridge. More preferably, the second contact layer may be provided on a portion of the ridge within an area of the optically active region.
  • FIG. 1 a wafer of material having formed thereon a plurality of optically active devices according to the prior art
  • FIG. 4 a schematic view from one side of the optically active device of FIG. 3;
  • FIG. 5 a schematic view from one end of the optically active device of FIG. 3;
  • a wafer generally designated 5 , according to the prior art, including a plurality of optically active devices 10 .
  • Each device 10 is formed in/on the wafer 5 , and each device 10 has on an outer surface thereof a first contact 15 and within an area of the first contact 15 , a second contact 20 which is thicker than the first contact 15 .
  • the plurality of devices 10 are distinguished from one another by lines of insulation material 25 .
  • the pattern or array of devices 10 is intended to be aligned such that an input or output facet 30 of each device 10 is substantially perpendicular to a cleavage plane 35 of the wafer 5 .
  • the cleavage plane 35 is defined by a so-called “flat” 40 provided at an outer edge 45 of the wafer 5 .
  • the optically active region 150 includes electrical contact 120 , ends 185 , 190 of the electrical contact 120 being spaced from the input end 175 and output end 180 of the device 110 respectively.
  • the optically active device 110 includes an optical waveguide in the form of a ridge waveguide 190 formed over the optically active region 150 , and the optically passive regions 155 , 160 .
  • the electrical contact 120 is provided on a portion of the waveguide 190 , the portion corresponding to the optically active region 150 .
  • the device 110 is of a monolithic construction grown on a substrate 200 .
  • the device 110 comprises an active core layer 205 , sandwiched between a first optical cladding/charge carrier confining layer 210 , and a second optical cladding/charge carrier confining layer 215 .
  • the first cladding layer 210 the core layer 205 , and the second cladding layer 215 may typically each have refractive indices of around 3.3 to 4.0, the core layer 215 having a refractive index which is higher than that of the cladding layers 205 , 210 .
  • the core layer 205 and first and second cladding layers 210 to 215 therefore, together form a slab waveguide.
  • the QWI technique may be substantially impurity free.
  • the QWI regions 155 , 160 may be “blue-shifted”, that is typically at least 20 to 30 meV likely around 100 meV, or more difference exists between the band-gaps of the active layer 205 in the optically active region 150 pumped with current, and the QWI region in the active layer 205 in the optically passive regions 155 , 160 .
  • the optically passive regions 155 , 160 therefore have a higher band-gap energy and therefore have a lower absorption than the optically active region 150 . Therefore the passive regions 155 , 160 are transparent to light generated or transmitted through a portion of the core layer 205 corresponding to the optically active region 150 .
  • the method comprises the steps of:
  • the passive regions 155 , 160 are preferably formed by a Quantum Well Intermixing (QWI) technique which comprises generating vacancies in the passive regions 155 , 160 .
  • the QWI technique may comprise implanting or defusing ions into the passive regions 155 , 160 .
  • the QWI technique may also include the subsequent step of annealing to create the compositionally disordered regions 155 , 160 of the optically active layer 205 , having a larger band-gap than the quantum well structure 225 per se.
  • Passive regions 155 , 160 may therefore be formed by QWI.
  • the ridge 220 may be formed by known etching techniques, eg dry or wet etching.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Glass Compositions (AREA)
  • Prostheses (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Filters (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
US09/788,988 2001-01-23 2001-02-20 Optical devices Abandoned US20020097942A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0101642A GB2371406A (en) 2001-01-23 2001-01-23 An Optically Active Device
GB0101642.7 2001-01-23

Publications (1)

Publication Number Publication Date
US20020097942A1 true US20020097942A1 (en) 2002-07-25

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US10/466,971 Expired - Lifetime US6944386B2 (en) 2001-01-23 2002-01-23 Optical devices

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US (2) US20020097942A1 (es)
EP (1) EP1421654B1 (es)
JP (1) JP2004526306A (es)
CN (1) CN1265518C (es)
AT (1) ATE298144T1 (es)
DE (1) DE60204702T2 (es)
ES (1) ES2244764T3 (es)
GB (1) GB2371406A (es)
WO (1) WO2002060022A2 (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002088816A1 (en) * 2001-04-27 2002-11-07 Sarnoff Corporation Optical waveguide crossing and method of making same

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US20050008055A1 (en) * 2003-05-30 2005-01-13 Archcom Technology, Inc. Facet passivation for edge emitting semiconductor lasers
CN103392149B (zh) * 2011-02-18 2016-04-06 独立行政法人产业技术综合研究所 光闸开关
US9306672B2 (en) * 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
EP2985645B1 (en) * 2014-08-13 2019-10-16 Caliopa NV Method for producing an integrated optical circuit
CN107093602B (zh) * 2017-04-18 2019-01-22 合肥汇芯半导体科技有限公司 一种可集成化的光控分子开关器件及其制备方法
AU2020289609A1 (en) * 2019-06-03 2022-01-06 Simone Assali Quantum heterostructures, related devices and methods for manufacturing the same
GB2595211B (en) 2020-05-13 2023-02-01 Rockley Photonics Ltd Hybrid integration process and devices

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US5145792A (en) * 1988-05-23 1992-09-08 Optical Measurement Technology Development Co., Ltd. Method of fabricating a semiconductor optical device
US5138626A (en) * 1990-09-12 1992-08-11 Hughes Aircraft Company Ridge-waveguide buried-heterostructure laser and method of fabrication
FR2674684A1 (fr) * 1991-03-28 1992-10-02 Alcatel Nv Procede de realisation d'un composant semiconducteur tel qu'un laser a ruban enterre.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002088816A1 (en) * 2001-04-27 2002-11-07 Sarnoff Corporation Optical waveguide crossing and method of making same
US6674950B2 (en) * 2001-04-27 2004-01-06 Sarnoff Corporation Optical waveguide crossing and method of making same

Also Published As

Publication number Publication date
ES2244764T3 (es) 2005-12-16
GB2371406A (en) 2002-07-24
JP2004526306A (ja) 2004-08-26
WO2002060022A3 (en) 2004-02-05
WO2002060022A2 (en) 2002-08-01
EP1421654A2 (en) 2004-05-26
DE60204702T2 (de) 2006-05-11
CN1265518C (zh) 2006-07-19
US6944386B2 (en) 2005-09-13
GB0101642D0 (en) 2001-03-07
US20040075098A1 (en) 2004-04-22
DE60204702D1 (de) 2005-07-21
ATE298144T1 (de) 2005-07-15
CN1529926A (zh) 2004-09-15
EP1421654B1 (en) 2005-06-15

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AS Assignment

Owner name: UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW, THE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HAMILTON, CRAIG JAMES;REEL/FRAME:012101/0022

Effective date: 20010723

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION