US20020031297A1 - Twin waveguide based design for photonic integrated circuits - Google Patents
Twin waveguide based design for photonic integrated circuits Download PDFInfo
- Publication number
- US20020031297A1 US20020031297A1 US09/982,001 US98200101A US2002031297A1 US 20020031297 A1 US20020031297 A1 US 20020031297A1 US 98200101 A US98200101 A US 98200101A US 2002031297 A1 US2002031297 A1 US 2002031297A1
- Authority
- US
- United States
- Prior art keywords
- waveguide
- active
- passive
- light
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
- G02B6/12019—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by the optical interconnection to or from the AWG devices, e.g. integration or coupling with lasers or photodiodes
- G02B6/12021—Comprising cascaded AWG devices; AWG multipass configuration; Plural AWG devices integrated on a single chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12121—Laser
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12178—Epitaxial growth
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12195—Tapering
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
- G02B6/2808—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs
- G02B6/2813—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs based on multimode interference effect, i.e. self-imaging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Definitions
- the present invention is related to the field of optical communications, and more particularly to waveguide design in photonic integrated circuits.
- Photonic integrated circuits provide an integrated technology platform increasingly used to form complex optical circuits.
- the PIC technology allows many optical devices, both active and passive, to be integrated on a single substrate.
- PICs may comprise integrated lasers, integrated receivers, waveguides, detectors, semiconductor optical amplifiers (SOA), and other active and passive semiconductor optical devices.
- SOA semiconductor optical amplifiers
- Such monolithic integration of active and passive devices in PICs provides an effective integrated technology platform for use in optical communications.
- a particularly versatile PIC platform technology is the integrated twin waveguide (TG) structure in which active and passive waveguides are combined in a vertical directional coupler geometry using evanescent field coupling.
- TG integrated twin waveguide
- the TG structure requires only a single epitaxial growth step to produce a structure on which active and passive devices are layered and fabricated. That is, TG provides a platform technology by which a variety of PICs, each with different layouts and components, can be fabricated from the same base wafer. All of the integrated components are defined by post-growth patterning, eliminating the need for epitaxial regrowth. Additionally, the active and passive components in a TG-based PIC can be separately optimized with postgrowth processing steps used to determine the location and type of devices on the PIC.
- the conventional TG structure suffers from the disadvantage that waveguide coupling is strongly dependent on device length, due to interaction between optical modes.
- a common problem in prior-art TG structures is the relative inability to control the lasing threshold current and coupling to the passive waveguide as a consequence of the sensitivity to variations in the device structure itself.
- the sensitivity variations arise from the interaction between the even and the odd modes of propagation in the conventional TG structure. This interaction leads to constructive and destructive interference in the laser cavity, which affects the threshold current, modal gain, coupling efficiency and output coupling parameters of the device.
- the threshold current represents the value above which the laser will lase
- the modal gain is the gain achieved by traveling through the medium between the laser facets
- the coupling efficiency is the percentage of optical power transference between the active and passive regions in the optical device.
- a modified TG structure was disclosed in U.S. Pat. No. 5,859,866 to Forrest et al., which addressed some of the performance problems of the conventional TG structure by adding an absorption layer (or loss layer) between the upper and lower waveguides, thereby introducing additional loss to the even mode so that its interaction with the odd mode is attenuated.
- That patent which includes common inventors with the invention described herein, is hereby incorporated by reference herein.
- the modified TG structure described in the '866 patent is designed to have relatively equal confinement factors for both the even and odd modes in each waveguide layer by constructing active and passive waveguides of equal effective indices of refraction.
- the resulting confinement factors are relatively the same because the even and odd optical modes are split relatively equally in the active and passive waveguides.
- the absorption layer in the modified TG structure suppresses lasing on the even mode, thereby making the TG coupling efficiency independent of laser cavity length.
- the absorption layer substantially eliminates the propagation of the even mode, while having minimal effect on the odd mode. With the substantial elimination of even-mode propagation by the absorptive layer, modal interaction is largely eliminated, resulting in optical power transfer without affecting performance parameters such as the threshold current, modal gain, coupling efficiency and output coupling.
- the modified TG structure of the '866 patent is ineffective in a device with a traveling-wave optical amplifier (TWA), which is an important component in PICs designed for optical communication systems.
- TWA traveling-wave optical amplifier
- the additional absorption in the single pass through the active region is insufficient to remove the even mode. It is desirable to have a common optical structure that can be effectively utilized for integrating both lasers and TWAs.
- the invention provides an asymmetric twin waveguide (ATG) structure that significantly reduces the negative effects of modal interference and which can be effectively used to implement both lasers and traveling-wave optical amplifiers (TWA).
- ATG in the invention advantageously ensures stability in the laser and the TWA.
- the ATG provided in the invention can be monolithically fabricated on a single epitaxial structure without the necessity of epitaxial re-growth.
- the ATG, according to the present invention is a versatile platform technology by which a variety of PICs, each with different layouts and components, can be fabricated from the same base wafer and modified with conventional semiconductor processing techniques to produce substantial modal gains and negligible coupling losses between PIC components.
- the effective index of one of the passive waveguides in the ATG is varied from that of a symmetric twin waveguide such that one mode of the even and odd modes of propagation is primarily confined to the passive waveguide and the other to the active waveguide.
- the mode with the larger confinement factor in the active waveguide experiences higher gain and becomes dominant.
- monolithic integration of a 1.55 ⁇ m wavelength InGaAsP/InP multiple quantum well (MQW) laser and a traveling-wave optical amplifier (TWA) is achieved using the ATG structure of the invention.
- the laser and the amplifier share the same strained InGaAsP MQW active layer grown by gas-source molecular beam epitaxy, while the underlying passive waveguide layer is used for on-chip optical interconnections between the active devices.
- the passive waveguide has a higher effective index than the active waveguide, resulting in the even and odd modes becoming highly asymmetric.
- An appropriate combination of the thickness and index of refraction of the materials chosen for the waveguides results in modifying the effective index of refraction.
- the ATG structure uses the difference in modal gains to discriminate between the even and odd modes.
- the active waveguide in a monolithically integrated device is laterally tapered by conventional semiconductor etching techniques.
- the tapered region of the active waveguide, at a junction of active and passive devices, helps to reduce coupling losses by resonant or adiabatic coupling of the optical energy between the passive waveguide and the active waveguide.
- the modal gain is significant compared to the symmetric TG structure and the coupling loss in the non-tapered ATG structure is reduced to negligible levels.
- FIG. 1 is a refractive index profile of the even and the odd modes of the asymmetric twin waveguide (ATG) structure in accordance with the present invention.
- FIG. 2 is a schematic view of the ATG structure in accordance with the present invention.
- FIG. 3 shows a schematic view illustrative of device fabrication for the ATG structure of the present invention.
- FIG. 4 is a three-dimensional schematic of the ATG structure including a taper coupler in accordance with the present invention.
- twin-waveguide approach to photonic integration represents a versatile platform technology by which a variety of PICs, each with different layouts and components, can be fabricated from the same base wafer—that wafer being grown in a single epitaxial growth step.
- the upper layer is used for active devices with gain (e.g., lasers, SOAs), whereas the lower layer, with a larger bandgap energy, is used for on-chip manipulation of the optic energy generated by the active device(s) via etched waveguides.
- active components such as semiconductor optical amplifiers (SOAs), Fabry-Perot and single frequency distributed Bragg reflector (DBR) lasers can be integrated with passive components such as Y-branches and multi-beam splitters, directional couplers, distributed Bragg feedback grating sections, multimode interference (MMI) couplers and Mach-Zehnder modulators.
- SOAs semiconductor optical amplifiers
- DBR single frequency distributed Bragg reflector
- the simple TG structured PIC suffers from a strong dependence between waveguide coupling and device length, due to the interaction between optical modes.
- this problem has been addressed by the addition of an absorption layer between the upper and lower waveguides, as disclosed in cross-referenced U.S. Pat. No. 5,859,866.
- Such an inserted absorption layer introduces additional loss to the even mode, thereby attenuating its interaction with the odd mode.
- the loss layer concept cannot be effectively applied to a single-pass or traveling-wave optical amplifier (TWA), where both the even and odd modes must be considered.
- TWA traveling-wave optical amplifier
- the additional absorption in the single pass through the active region is insufficient to remove the even mode, since in a TWA, reflectivity is suppressed for both facets of the semiconductor laser.
- a new, more advantageous approach to mode selection in a TG is disclosed herein—an asymmetric twin waveguide structure, which can be effectively utilized with a TWA and a laser.
- a symmetric TG as described above, equal confinement factors exist for both the even and odd modes in each waveguiding layer. This permits nearly complete power transfer between the guides and the maximum output coupling at an etched half-facet is 50 percent for either mode.
- the asymmetric twin waveguide (ATG) structure of the invention on the other hand, the effective index of the passive or active waveguide layer is changed relative to that used in a symmetric TG structure.
- the even and odd modes of propagation are split unequally between the waveguides.
- the unequal splitting is shown graphically in FIG. 1, which illustrates the modal intensity and refractive index profile of the ATG structure of the invention.
- the odd mode is primarily confined to the active waveguide, while the even mode is more strongly confined to the passive waveguide.
- the figure also shows, for an illustrative embodiment of the invention described below, the calculated confinement factors for both modes in the quantum wells ( ⁇ QW ) in the active waveguide, and their coupling coefficients to the passive waveguide (C o , C e for odd and even modes, respectively).
- the odd mode has higher gain and reflectivity at the etched facet, and therefore easily dominates in an ATG laser. Accordingly, for such an ATG laser, the absorption layer needed for the symmetric TG is not warranted.
- TWA traveling wave optical amplifier
- the situation is more complex, because both modes must be considered.
- As light enters the ATG TWA section it splits between the even (e) and odd (o) modes with the amplitude coupling coefficients, C e and C o equal to the overlap integrals of the corresponding modes with the mode of the passive guide.
- the same coupling coefficients apply at the end of the TG section. Ignoring gain saturation effects, the total input-to-output electric-field transmission ratio is:
- E out /E in C e 2 exp( ⁇ e QW gL/ 2)+ C o 2 exp( ⁇ o QW gL/ 2)exp( i ⁇ k ⁇ L )
- g is the gain of the quantum well stack
- L is the length of the TG section
- ⁇ k ⁇ L is the phase difference between the even and odd modes at the amplifier output due to their slightly different propagation constants.
- the odd mode is amplified much more than the even, and dominates the TWA output regardless of phase. In this circumstance, the even mode can be ignored, and the input-to-output power gain is
- the ATG structure of the invention uses gain, rather than a loss layer, to discriminate between the modes. This ensures stability of both ATG lasers and TWAs by reducing mode interference effects.
- FIG. 2 An illustrative embodiment of the invention is depicted schematically in FIG. 2.
- the active waveguide 71 incorporates multiple quantum wells 115 for high gain.
- six such quantum wells are selected, and the active waveguide implements a laser and a TWA.
- Vertical facets 150 and 160 are formed in the active waveguide for the laser and the TWA.
- Passive region 61 incorporates a passive waveguide 125 for propagating light emitted from the active waveguide.
- the refractive indices and thickness of the waveguide layers are chosen to achieve a 30:70 ratio of confinement factors in the passive guide for the odd and even modes, respectively.
- the resulting quantum well confinement factors are 11% for the odd and 5% for the even mode.
- Fabrication of this illustrative ATG structure is carried out using gas-source molecular beam epitaxy on an S-doped (100)n+ lnP substrate.
- active regions of the laser and TWA are masked using a 3000 ⁇ thick layer of plasma-deposited SiN ⁇ .
- the unmasked areas are etched to the bottom of the first waveguide using reactive ion etching in a CH 4 :7H 2 plasma at 0.8 W/cm 2 . This etch removes the upper waveguide layer and quantum wells from the passive regions of the device, and at the same time, forms the vertical facets ( 150 and 160 of FIG. 2) for the laser and TWA.
- a second, 5 ⁇ m-wide SiN ⁇ mask is then used to define the ridge waveguide.
- This ridge (as shown in FIG. 3) runs perpendicular to the etched facet in the laser section, and is tilted at a 7° angle from the normal position at both TWA facets in order to prevent optical feedback into the amplifier.
- the ridge waveguide is formed by material-selective wet etching using a 1H 2 SO 4 :1H 2 O 2 :10H 2 O for InGaAsP, and 3HCl:1H 3 PO 4 for InP.
- the ridge is about 3.8 ⁇ m wide, and supports a single lateral mode.
- the ridge height in the active and passive regions is different, controlled by two InGaAsP etch-stop layers.
- the dry-etched facets of the laser and TWA are protected by the ridge mask which is continuous on the vertical walls.
- the wafer is spin-coated with photoresist which is then etched in an O 2 plasma until the top of the ridge is exposed. The SiN ⁇ is then removed from the ridge, followed by the removal of the photoresist.
- the p- and n-contacts are electron-beam deposited using Ti/Ni/Au (200/500/1200 ⁇ ) and Ge/Au/Ni/Au (270/450/215/1200 ⁇ ), respectively.
- the rear laser facet and the TWA output waveguide are cleaved.
- the confinement factors for the two optical modes are split unequally between the active and passive waveguides.
- one of the modes is primarily confined to the passive waveguide and the other to the active waveguide.
- the mode which is contained primarily in the upper waveguide experiences higher gain and becomes dominant.
- the ATG structure provides a gain advantage, and generally higher stability, over a symmetric TG structure.
- the ATG structure also produces a relatively larger coupling loss than is experienced with the symmetric TG. While the higher gain for the ATG structure more than offsets this relative disadvantage in coupling loss, it would be desirable to provide an ATG structure with lower coupling loss.
- a further embodiment of the invention is disclosed herein which improves the efficiency of coupling power between the active to the passive waveguide and back in an ATG.
- this further embodiment of the invention applies a lateral taper on the active waveguide to induce coupling between the active region and the adjacent passive region.
- This implementation drastically reduces coupling losses between the waveguide layers while retaining the absolute gain for the dominant mode in the active region.
- the performance of such an ATG combined with a taper on the active waveguide rivals the performance of devices previously possible only using complicated epitaxial regrowth processes.
- FIG. 4 there is shown an exemplary embodiment of an ATG taper coupler in accordance with the invention.
- the exemplary ATG structure 11 of FIG. 4 incorporates a 2.4 ⁇ m wide shallow ridge waveguide in the upper active layer having an effective index higher than that of the lower passive layer.
- the even mode of propagation has a high confinement factor in the multiple quantum well active region.
- only the even mode of a Fabry-Perot laser will undergo significant gain.
- the coupling of this amplified mode into the passive layer at the end of the gain region is accomplished by increasing the etch depth of the waveguide ridge through the active layer to form a high-contrast lateral waveguide followed by a lateral taper region 81 .
- an exponential taper is used, which has a smaller mode transformation loss than a linear taper. It should, however, be understood that tapers of other shapes, as well as multi-section tapers, may be incorporated into the active waveguide and are within the contemplation of the invention.
- the effective indices of the two guides are matched and the power couples into the lower waveguide.
- its effective index becomes smaller than that of the passive guide, in effect, locking the mode into the lower layer.
- This coupling arrangement is largely insensitive to small wavelength changes as long as the untapered ATG structure remains strongly asymmetric.
- Fabrication of the exemplary ATG taper coupler is as follows: An InGaAsP passive waveguide 61 is first grown on a n+ doped (100) InP substrate 51 .
- the passive waveguide 61 is 0.5 ⁇ m thick and has an energy gap cutoff wavelength of ⁇ g of 1.2 ⁇ m.
- An InP cladding layer 41 of thickness 0.5 ⁇ m is followed by an InGaAsP active waveguide 71 with an energy gap cutoff wavelength of ⁇ g of 1.20 ⁇ m.
- the active waveguide 71 incorporates six 135 ⁇ thick, 1% compressively strained InGaAsP quantum wells separated by 228 ⁇ barriers.
- An InP top cladding layer 31 is grown to a thickness of 1.2 ⁇ m and then a p+ InGaAsP contact layer 21 of 0.2 ⁇ m thickness is grown on top of the top cladding layer 31 .
- a laser ridge waveguide with tapers at both ends is etched in a CH 4 /H 2 (1:7) plasma at 0.8 W/cm 2 using a SiN ⁇ mask.
- the 1.2 ⁇ m high ridge terminates approximately 0.2 ⁇ m above the active waveguide.
- a second, wide SiN ⁇ mask is added to cover the laser gain region but not the tapers.
- Etching is continued through the active waveguide defining the vertical walls of the taper and the etched facet, the latter being tilted at an angle of 7° from the waveguide longitudinal axis to prevent unwanted reflections.
- the 700 nm high passive ridge is patterned and etched, extending 0.2 ⁇ m into the lower waveguide.
- a 3000 ⁇ thick SiN ⁇ electrical isolation layer is deposited, followed by a Ti/Ni/Au (200/500/1200 ⁇ ) p-contact patterned using a self-aligned photoresist process. Finally, the wafer is thinned to approximately 100 ⁇ m and the Ge/Au/Ni/Au (270/450/215/1200 ⁇ ) n-contact is deposited and annealed at 360° C.
- a grating region is incorporated atop the passive waveguide.
- the grating region can be conventionally etched or formed on the passive waveguide and can be shaped with triangular peaks or can be sinusoidal or rectangular in shape with repeating patterns.
- the grating region is used to select certain frequencies for transmission of light through the passive waveguide. By selectively adjusting the period of the grating region, the frequency to be reflected can be selected.
- the invention can also be embodied in other integrated devices, using lasers and TWAs as the active components, interconnected by waveguides formed in passive layers using tapers at each active-to-passive junction providing low-loss optical coupling of light between adjacent sections.
- a monolithically integrated InGaAsP/InP MQW laser and optical amplifier are disclosed herein, using a novel, asymmetric twin-waveguide (ATG) structure which uses gain to select one of the two propagating modes.
- the ATG structure can be effectively utilized with a traveling-wave amplifier (TWA), where performance up to 17 dB internal gain and low gain ripple can be obtained.
- TWA traveling-wave amplifier
- the ATG structure differs from the prior art symmetric twin waveguide structure in that the two optical modes are split unequally between the active and passive waveguides. This is achieved by varying the effective index of the waveguides slightly from that required by the symmetric mode condition. As a result, one of the modes is primarily confined to the passive waveguide. The mode with the larger confinement factor in the active waveguide experiences higher gain and becomes dominant. A smaller coupling ratio for the dominant mode compared to that in the symmetric structure is offset by higher gain for that mode due to its confinement factor of the active region therein which is larger than that of the symmetric TG.
- the ATG structure of the invention uses a single material growth step, followed by dry and wet etching steps to delineate the active and passive devices in the upper and lower waveguides of the TG structure.
- the ATG structure of the invention is integrated with a taper coupler to retain the higher gain possible with an ATG while reducing the coupling losses between the active and passive devices made from the ATG structure.
Abstract
Description
- The invention is related to U.S. Provisional Application No. 60/090,451, filed on Jun. 24, 1998, entitled TWIN WAVEGUIDE BASED DESIGN FOR PHOTONIC INTEGRATED CIRCUITS, the subject matter thereof being fully incorporated by reference herein.
- The present invention is related to the field of optical communications, and more particularly to waveguide design in photonic integrated circuits.
- Photonic integrated circuits (PIC) provide an integrated technology platform increasingly used to form complex optical circuits. The PIC technology allows many optical devices, both active and passive, to be integrated on a single substrate. For example, PICs may comprise integrated lasers, integrated receivers, waveguides, detectors, semiconductor optical amplifiers (SOA), and other active and passive semiconductor optical devices. Such monolithic integration of active and passive devices in PICs provides an effective integrated technology platform for use in optical communications.
- A particularly versatile PIC platform technology is the integrated twin waveguide (TG) structure in which active and passive waveguides are combined in a vertical directional coupler geometry using evanescent field coupling. As is known, the TG structure requires only a single epitaxial growth step to produce a structure on which active and passive devices are layered and fabricated. That is, TG provides a platform technology by which a variety of PICs, each with different layouts and components, can be fabricated from the same base wafer. All of the integrated components are defined by post-growth patterning, eliminating the need for epitaxial regrowth. Additionally, the active and passive components in a TG-based PIC can be separately optimized with postgrowth processing steps used to determine the location and type of devices on the PIC.
- The conventional TG structure, however, suffers from the disadvantage that waveguide coupling is strongly dependent on device length, due to interaction between optical modes. A common problem in prior-art TG structures is the relative inability to control the lasing threshold current and coupling to the passive waveguide as a consequence of the sensitivity to variations in the device structure itself. The sensitivity variations arise from the interaction between the even and the odd modes of propagation in the conventional TG structure. This interaction leads to constructive and destructive interference in the laser cavity, which affects the threshold current, modal gain, coupling efficiency and output coupling parameters of the device. It is noted that the threshold current represents the value above which the laser will lase, the modal gain is the gain achieved by traveling through the medium between the laser facets, and the coupling efficiency is the percentage of optical power transference between the active and passive regions in the optical device. In sum, the conventional TG structure suffers from unstable sensitivity in performance characteristics due to laser cavity length, even/odd mode interaction and variations in the layered structure.
- A modified TG structure was disclosed in U.S. Pat. No. 5,859,866 to Forrest et al., which addressed some of the performance problems of the conventional TG structure by adding an absorption layer (or loss layer) between the upper and lower waveguides, thereby introducing additional loss to the even mode so that its interaction with the odd mode is attenuated. That patent, which includes common inventors with the invention described herein, is hereby incorporated by reference herein. The modified TG structure described in the '866 patent is designed to have relatively equal confinement factors for both the even and odd modes in each waveguide layer by constructing active and passive waveguides of equal effective indices of refraction. The resulting confinement factors are relatively the same because the even and odd optical modes are split relatively equally in the active and passive waveguides. The absorption layer in the modified TG structure suppresses lasing on the even mode, thereby making the TG coupling efficiency independent of laser cavity length. The absorption layer substantially eliminates the propagation of the even mode, while having minimal effect on the odd mode. With the substantial elimination of even-mode propagation by the absorptive layer, modal interaction is largely eliminated, resulting in optical power transfer without affecting performance parameters such as the threshold current, modal gain, coupling efficiency and output coupling.
- However, the modified TG structure of the '866 patent is ineffective in a device with a traveling-wave optical amplifier (TWA), which is an important component in PICs designed for optical communication systems. In a TG device with an absorption layer operated as a TWA, the additional absorption in the single pass through the active region is insufficient to remove the even mode. It is desirable to have a common optical structure that can be effectively utilized for integrating both lasers and TWAs.
- Therefore, there is a need in the art of optical communications to provide a relatively simple and cost-effective integration scheme for use with a traveling-wave optical amplifier (TWA).
- There is a further need in the art to provide a twin waveguide (TG) structure that ensures stability in the laser and the traveling-wave optical amplifier (TWA).
- There is a further need in the art to provide a TG structure that significantly reduces negative effects of modal interference without the concomitant coupling loss.
- There is a further need in the art to provide a TG structure with the aforementioned advantages that can be monolithically fabricated on a single epitaxial structure.
- The invention provides an asymmetric twin waveguide (ATG) structure that significantly reduces the negative effects of modal interference and which can be effectively used to implement both lasers and traveling-wave optical amplifiers (TWA). The ATG in the invention advantageously ensures stability in the laser and the TWA. In addition, the ATG provided in the invention can be monolithically fabricated on a single epitaxial structure without the necessity of epitaxial re-growth. Most importantly, the ATG, according to the present invention, is a versatile platform technology by which a variety of PICs, each with different layouts and components, can be fabricated from the same base wafer and modified with conventional semiconductor processing techniques to produce substantial modal gains and negligible coupling losses between PIC components.
- In an embodiment of the ATG structure of the invention, the effective index of one of the passive waveguides in the ATG is varied from that of a symmetric twin waveguide such that one mode of the even and odd modes of propagation is primarily confined to the passive waveguide and the other to the active waveguide. As a result, the mode with the larger confinement factor in the active waveguide experiences higher gain and becomes dominant.
- In an illustrative embodiment, monolithic integration of a 1.55 μm wavelength InGaAsP/InP multiple quantum well (MQW) laser and a traveling-wave optical amplifier (TWA) is achieved using the ATG structure of the invention. The laser and the amplifier share the same strained InGaAsP MQW active layer grown by gas-source molecular beam epitaxy, while the underlying passive waveguide layer is used for on-chip optical interconnections between the active devices. In this particular embodiment, the passive waveguide has a higher effective index than the active waveguide, resulting in the even and odd modes becoming highly asymmetric. An appropriate combination of the thickness and index of refraction of the materials chosen for the waveguides results in modifying the effective index of refraction. The ATG structure uses the difference in modal gains to discriminate between the even and odd modes.
- In a further embodiment, the active waveguide in a monolithically integrated device is laterally tapered by conventional semiconductor etching techniques. The tapered region of the active waveguide, at a junction of active and passive devices, helps to reduce coupling losses by resonant or adiabatic coupling of the optical energy between the passive waveguide and the active waveguide. As a result, the modal gain is significant compared to the symmetric TG structure and the coupling loss in the non-tapered ATG structure is reduced to negligible levels.
- A more complete understanding of the present invention may be obtained by considering the following description in conjunction with the drawings in which:
- FIG. 1 is a refractive index profile of the even and the odd modes of the asymmetric twin waveguide (ATG) structure in accordance with the present invention.
- FIG. 2 is a schematic view of the ATG structure in accordance with the present invention.
- FIG. 3 shows a schematic view illustrative of device fabrication for the ATG structure of the present invention.
- FIG. 4 is a three-dimensional schematic of the ATG structure including a taper coupler in accordance with the present invention.
- As already noted in the Background, the twin-waveguide approach to photonic integration represents a versatile platform technology by which a variety of PICs, each with different layouts and components, can be fabricated from the same base wafer—that wafer being grown in a single epitaxial growth step. Typically, the upper layer is used for active devices with gain (e.g., lasers, SOAs), whereas the lower layer, with a larger bandgap energy, is used for on-chip manipulation of the optic energy generated by the active device(s) via etched waveguides. With such a TG structured PIC, active components such as semiconductor optical amplifiers (SOAs), Fabry-Perot and single frequency distributed Bragg reflector (DBR) lasers can be integrated with passive components such as Y-branches and multi-beam splitters, directional couplers, distributed Bragg feedback grating sections, multimode interference (MMI) couplers and Mach-Zehnder modulators.
- As previously noted, the simple TG structured PIC suffers from a strong dependence between waveguide coupling and device length, due to the interaction between optical modes. For TG lasers, this problem has been addressed by the addition of an absorption layer between the upper and lower waveguides, as disclosed in cross-referenced U.S. Pat. No. 5,859,866. Such an inserted absorption layer introduces additional loss to the even mode, thereby attenuating its interaction with the odd mode. However, the loss layer concept cannot be effectively applied to a single-pass or traveling-wave optical amplifier (TWA), where both the even and odd modes must be considered. In a TG structure incorporating a TWA, the additional absorption in the single pass through the active region is insufficient to remove the even mode, since in a TWA, reflectivity is suppressed for both facets of the semiconductor laser.
- Accordingly, a new, more advantageous approach to mode selection in a TG is disclosed herein—an asymmetric twin waveguide structure, which can be effectively utilized with a TWA and a laser. With a symmetric TG, as described above, equal confinement factors exist for both the even and odd modes in each waveguiding layer. This permits nearly complete power transfer between the guides and the maximum output coupling at an etched half-facet is 50 percent for either mode. With the asymmetric twin waveguide (ATG) structure of the invention, on the other hand, the effective index of the passive or active waveguide layer is changed relative to that used in a symmetric TG structure. As a result of differing effective indices of refraction, the even and odd modes of propagation are split unequally between the waveguides. The unequal splitting is shown graphically in FIG. 1, which illustrates the modal intensity and refractive index profile of the ATG structure of the invention. As will be seen in the figure, in this particular case, the odd mode is primarily confined to the active waveguide, while the even mode is more strongly confined to the passive waveguide. The figure also shows, for an illustrative embodiment of the invention described below, the calculated confinement factors for both modes in the quantum wells (ΓQW) in the active waveguide, and their coupling coefficients to the passive waveguide (Co, Ce for odd and even modes, respectively).
- With the ATG structure of the invention, the odd mode has higher gain and reflectivity at the etched facet, and therefore easily dominates in an ATG laser. Accordingly, for such an ATG laser, the absorption layer needed for the symmetric TG is not warranted. However, for a traveling wave optical amplifier (TWA) implemented in the ATG active waveguide, the situation is more complex, because both modes must be considered. As light enters the ATG TWA section, it splits between the even (e) and odd (o) modes with the amplitude coupling coefficients, Ce and Co equal to the overlap integrals of the corresponding modes with the mode of the passive guide. The same coupling coefficients apply at the end of the TG section. Ignoring gain saturation effects, the total input-to-output electric-field transmission ratio is:
- E out /E in =C e 2 exp(Γe QW gL/2)+C o 2 exp(Γo QW gL/2)exp(iΔk·L)
- where g is the gain of the quantum well stack, L is the length of the TG section, and Δk·L is the phase difference between the even and odd modes at the amplifier output due to their slightly different propagation constants. For sufficiently large gL, the odd mode is amplified much more than the even, and dominates the TWA output regardless of phase. In this circumstance, the even mode can be ignored, and the input-to-output power gain is
- P out /P in =C o 4 exp(Γo QW gL).
- Hence, the ATG structure of the invention uses gain, rather than a loss layer, to discriminate between the modes. This ensures stability of both ATG lasers and TWAs by reducing mode interference effects.
- An illustrative embodiment of the invention is depicted schematically in FIG. 2. In the illustrated ATG structure11, shown in vertical cross-section in the figure, two stacked waveguide layers 61 and 71 are separated by cladding
layers active waveguide 71 incorporates multiplequantum wells 115 for high gain. For an exemplary embodiment, six such quantum wells are selected, and the active waveguide implements a laser and a TWA.Vertical facets Passive region 61 incorporates apassive waveguide 125 for propagating light emitted from the active waveguide. The refractive indices and thickness of the waveguide layers are chosen to achieve a 30:70 ratio of confinement factors in the passive guide for the odd and even modes, respectively. The resulting quantum well confinement factors are 11% for the odd and 5% for the even mode. - Fabrication of this illustrative ATG structure, which is depicted schematically in FIG. 3, is carried out using gas-source molecular beam epitaxy on an S-doped (100)n+ lnP substrate. After epitaxial growth, active regions of the laser and TWA are masked using a 3000 Å thick layer of plasma-deposited SiNχ. The unmasked areas are etched to the bottom of the first waveguide using reactive ion etching in a CH4:7H2 plasma at 0.8 W/cm2. This etch removes the upper waveguide layer and quantum wells from the passive regions of the device, and at the same time, forms the vertical facets (150 and 160 of FIG. 2) for the laser and TWA.
- A second, 5 μm-wide SiNχ mask is then used to define the ridge waveguide. This ridge (as shown in FIG. 3) runs perpendicular to the etched facet in the laser section, and is tilted at a 7° angle from the normal position at both TWA facets in order to prevent optical feedback into the amplifier. The ridge waveguide is formed by material-selective wet etching using a 1H2SO4:1H2O2:10H2O for InGaAsP, and 3HCl:1H3PO4 for InP. The ridge is about 3.8 μm wide, and supports a single lateral mode. The ridge height in the active and passive regions is different, controlled by two InGaAsP etch-stop layers. During the wet etching process, the dry-etched facets of the laser and TWA are protected by the ridge mask which is continuous on the vertical walls. Following deposition of the isolation SiNχ, the wafer is spin-coated with photoresist which is then etched in an O2 plasma until the top of the ridge is exposed. The SiNχ is then removed from the ridge, followed by the removal of the photoresist. In the next step, the p- and n-contacts are electron-beam deposited using Ti/Ni/Au (200/500/1200 Å) and Ge/Au/Ni/Au (270/450/215/1200 Å), respectively. Finally, the rear laser facet and the TWA output waveguide are cleaved.
- With the ATG structure of the invention as heretofore described, the confinement factors for the two optical modes (odd and even) are split unequally between the active and passive waveguides. As a result, one of the modes is primarily confined to the passive waveguide and the other to the active waveguide. The mode which is contained primarily in the upper waveguide experiences higher gain and becomes dominant. Thus, the ATG structure provides a gain advantage, and generally higher stability, over a symmetric TG structure. However, the ATG structure also produces a relatively larger coupling loss than is experienced with the symmetric TG. While the higher gain for the ATG structure more than offsets this relative disadvantage in coupling loss, it would be desirable to provide an ATG structure with lower coupling loss. To that end, a further embodiment of the invention is disclosed herein which improves the efficiency of coupling power between the active to the passive waveguide and back in an ATG.
- In particular, this further embodiment of the invention applies a lateral taper on the active waveguide to induce coupling between the active region and the adjacent passive region. This implementation drastically reduces coupling losses between the waveguide layers while retaining the absolute gain for the dominant mode in the active region. The performance of such an ATG combined with a taper on the active waveguide rivals the performance of devices previously possible only using complicated epitaxial regrowth processes.
- Referring to FIG. 4, there is shown an exemplary embodiment of an ATG taper coupler in accordance with the invention. The exemplary ATG structure11 of FIG. 4 incorporates a 2.4 μm wide shallow ridge waveguide in the upper active layer having an effective index higher than that of the lower passive layer. Hence, the even mode of propagation has a high confinement factor in the multiple quantum well active region. Under this condition, only the even mode of a Fabry-Perot laser will undergo significant gain. The coupling of this amplified mode into the passive layer at the end of the gain region is accomplished by increasing the etch depth of the waveguide ridge through the active layer to form a high-contrast lateral waveguide followed by a
lateral taper region 81. For the exemplary embodiment, an exponential taper is used, which has a smaller mode transformation loss than a linear taper. It should, however, be understood that tapers of other shapes, as well as multi-section tapers, may be incorporated into the active waveguide and are within the contemplation of the invention. - At a tapered waveguide width of 1.1 μm for the exemplary embodiment, the effective indices of the two guides are matched and the power couples into the lower waveguide. As the taper narrows further, its effective index becomes smaller than that of the passive guide, in effect, locking the mode into the lower layer. This coupling arrangement is largely insensitive to small wavelength changes as long as the untapered ATG structure remains strongly asymmetric.
- Fabrication of the exemplary ATG taper coupler is as follows: An InGaAsP
passive waveguide 61 is first grown on a n+ doped (100)InP substrate 51. Thepassive waveguide 61 is 0.5 μm thick and has an energy gap cutoff wavelength of λg of 1.2 μm. AnInP cladding layer 41 of thickness 0.5 μm is followed by an InGaAsPactive waveguide 71 with an energy gap cutoff wavelength of λg of 1.20 μm. Theactive waveguide 71 incorporates six 135 Å thick, 1% compressively strained InGaAsP quantum wells separated by 228 Å barriers. An InPtop cladding layer 31 is grown to a thickness of 1.2 μm and then a p+InGaAsP contact layer 21 of 0.2 μm thickness is grown on top of thetop cladding layer 31. - Once the basic twin-guide structure has been grown, a laser ridge waveguide with tapers at both ends is etched in a CH4/H2(1:7) plasma at 0.8 W/cm2 using a SiNχ mask. The 1.2 μm high ridge terminates approximately 0.2 μm above the active waveguide. Next, a second, wide SiNχ mask is added to cover the laser gain region but not the tapers. Etching is continued through the active waveguide defining the vertical walls of the taper and the etched facet, the latter being tilted at an angle of 7° from the waveguide longitudinal axis to prevent unwanted reflections. Next, the 700 nm high passive ridge is patterned and etched, extending 0.2 μm into the lower waveguide. After etching, a 3000 Å thick SiNχ electrical isolation layer is deposited, followed by a Ti/Ni/Au (200/500/1200 Å) p-contact patterned using a self-aligned photoresist process. Finally, the wafer is thinned to approximately 100 μm and the Ge/Au/Ni/Au (270/450/215/1200 Å) n-contact is deposited and annealed at 360° C.
- The inventors have empirically concluded that additional loss in the integrated devices due to the taper couplers is negligible. Empirical results also show that an ATG taper coupler with integrated lasers with LA=2.05 mm produced output powers≦approximately 35 mW with 24% slope efficiency per facet. Imaging the facets with an infrared video camera clearly shows that almost all of the power is emitted from the waveguide, with very little light scattered from the tapered region.
- In a further embodiment, a grating region is incorporated atop the passive waveguide. The grating region can be conventionally etched or formed on the passive waveguide and can be shaped with triangular peaks or can be sinusoidal or rectangular in shape with repeating patterns. The grating region is used to select certain frequencies for transmission of light through the passive waveguide. By selectively adjusting the period of the grating region, the frequency to be reflected can be selected.
- The invention can also be embodied in other integrated devices, using lasers and TWAs as the active components, interconnected by waveguides formed in passive layers using tapers at each active-to-passive junction providing low-loss optical coupling of light between adjacent sections.
- Conclusion
- A monolithically integrated InGaAsP/InP MQW laser and optical amplifier are disclosed herein, using a novel, asymmetric twin-waveguide (ATG) structure which uses gain to select one of the two propagating modes. The ATG structure can be effectively utilized with a traveling-wave amplifier (TWA), where performance up to 17 dB internal gain and low gain ripple can be obtained.
- The ATG structure differs from the prior art symmetric twin waveguide structure in that the two optical modes are split unequally between the active and passive waveguides. This is achieved by varying the effective index of the waveguides slightly from that required by the symmetric mode condition. As a result, one of the modes is primarily confined to the passive waveguide. The mode with the larger confinement factor in the active waveguide experiences higher gain and becomes dominant. A smaller coupling ratio for the dominant mode compared to that in the symmetric structure is offset by higher gain for that mode due to its confinement factor of the active region therein which is larger than that of the symmetric TG.
- The ATG structure of the invention uses a single material growth step, followed by dry and wet etching steps to delineate the active and passive devices in the upper and lower waveguides of the TG structure.
- In a further embodiment, the ATG structure of the invention is integrated with a taper coupler to retain the higher gain possible with an ATG while reducing the coupling losses between the active and passive devices made from the ATG structure.
- Although the present invention is described in various illustrative embodiments, it is not intended to limit the invention to the precise embodiments disclosed herein. Accordingly, this description is to be construed as illustrative only. Those who are skilled in this technology can make various alterations and modifications without departing from the scope and spirit of this invention. Therefore, the scope of the present invention shall be defined and protected by the following claims and their equivalents. The exclusive use of all modifications within the scope of the claims is reserved.
Claims (40)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/982,001 US7302124B2 (en) | 1998-06-24 | 2001-10-18 | Twin waveguide based design for photonic integrated circuits |
US10/163,436 US6795622B2 (en) | 1998-06-24 | 2002-06-04 | Photonic integrated circuits |
US10/642,316 US6819814B2 (en) | 1998-06-24 | 2003-08-15 | Twin waveguide based design for photonic integrated circuits |
US10/983,366 US7327910B2 (en) | 1998-06-24 | 2004-11-08 | Twin waveguide based design for photonic integrated circuits |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9045198P | 1998-06-24 | 1998-06-24 | |
US09/337,785 US6381380B1 (en) | 1998-06-24 | 1999-06-22 | Twin waveguide based design for photonic integrated circuits |
US09/982,001 US7302124B2 (en) | 1998-06-24 | 2001-10-18 | Twin waveguide based design for photonic integrated circuits |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/337,785 Continuation US6381380B1 (en) | 1998-06-24 | 1999-06-22 | Twin waveguide based design for photonic integrated circuits |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/163,436 Continuation-In-Part US6795622B2 (en) | 1998-06-24 | 2002-06-04 | Photonic integrated circuits |
US10/642,316 Continuation US6819814B2 (en) | 1998-06-24 | 2003-08-15 | Twin waveguide based design for photonic integrated circuits |
Publications (2)
Publication Number | Publication Date |
---|---|
US20020031297A1 true US20020031297A1 (en) | 2002-03-14 |
US7302124B2 US7302124B2 (en) | 2007-11-27 |
Family
ID=22222822
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/337,785 Expired - Fee Related US6381380B1 (en) | 1998-06-24 | 1999-06-22 | Twin waveguide based design for photonic integrated circuits |
US09/982,001 Expired - Fee Related US7302124B2 (en) | 1998-06-24 | 2001-10-18 | Twin waveguide based design for photonic integrated circuits |
US10/642,316 Expired - Fee Related US6819814B2 (en) | 1998-06-24 | 2003-08-15 | Twin waveguide based design for photonic integrated circuits |
US10/983,366 Expired - Fee Related US7327910B2 (en) | 1998-06-24 | 2004-11-08 | Twin waveguide based design for photonic integrated circuits |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/337,785 Expired - Fee Related US6381380B1 (en) | 1998-06-24 | 1999-06-22 | Twin waveguide based design for photonic integrated circuits |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/642,316 Expired - Fee Related US6819814B2 (en) | 1998-06-24 | 2003-08-15 | Twin waveguide based design for photonic integrated circuits |
US10/983,366 Expired - Fee Related US7327910B2 (en) | 1998-06-24 | 2004-11-08 | Twin waveguide based design for photonic integrated circuits |
Country Status (6)
Country | Link |
---|---|
US (4) | US6381380B1 (en) |
EP (1) | EP1090317A4 (en) |
JP (1) | JP2002519842A (en) |
AU (1) | AU4829599A (en) |
CA (1) | CA2335942C (en) |
WO (1) | WO1999067665A1 (en) |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6465269B2 (en) * | 1997-05-02 | 2002-10-15 | Nec Corporation | Semiconductor optical device and method of manufacturing the same |
US20020154393A1 (en) * | 2001-04-24 | 2002-10-24 | Nec Corporation | Semiconductor optical amplifier and semiconductor laser |
US20030007719A1 (en) * | 1998-06-24 | 2003-01-09 | Forrest Stephen R. | Photonic integrated circuits |
US20040052445A1 (en) * | 1998-06-24 | 2004-03-18 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
US20040057653A1 (en) * | 2002-09-25 | 2004-03-25 | Sumitomo Electric Industries, Ltd. | Integrated optical element, integrated optical element fabrication method, and light source module |
US20050185889A1 (en) * | 2004-02-18 | 2005-08-25 | Trustees Of Princeton University | Polarization insensitive semiconductor optical amplifier |
US6935792B2 (en) | 2002-10-21 | 2005-08-30 | General Electric Company | Optoelectronic package and fabrication method |
US20060013273A1 (en) * | 2004-04-14 | 2006-01-19 | The Trustees Of Princeton University | Monolithic wavelength stabilized asymmetric laser |
KR100594037B1 (en) | 2004-01-19 | 2006-06-30 | 삼성전자주식회사 | Semiconductor optical device having the spot size conversion region |
US20070077017A1 (en) * | 2005-09-30 | 2007-04-05 | The Trustees Of Princeton University | Photonic integrated devices having reduced absorption loss |
US7343061B2 (en) | 2005-11-15 | 2008-03-11 | The Trustees Of Princeton University | Integrated photonic amplifier and detector |
US7826693B2 (en) | 2006-10-26 | 2010-11-02 | The Trustees Of Princeton University | Monolithically integrated reconfigurable optical add-drop multiplexer |
US20110150406A1 (en) * | 2006-12-07 | 2011-06-23 | Electronics And Telecommunications Research Institute | Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) |
WO2011123111A1 (en) * | 2010-03-31 | 2011-10-06 | Hewlett-Packard Development Company, L.P. | Waveguide system and methods |
US20120093187A1 (en) * | 2009-05-05 | 2012-04-19 | Johannes Bernhard Koeth | DFB Laser Diode Having a Lateral Coupling for Large Output Power |
US20140321801A1 (en) * | 2013-04-29 | 2014-10-30 | International Business Machnes Corporation | Vertical bend waveguide coupler for photonics applications |
EP1939955A3 (en) * | 2006-12-27 | 2015-12-23 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Optical device and system and method for fabricating the device |
US9240673B2 (en) * | 2014-01-20 | 2016-01-19 | Rockley Photonics Limited | Tunable SOI laser |
CN105826812A (en) * | 2015-01-27 | 2016-08-03 | 华为技术有限公司 | Tunable laser and method of tuning laser |
CN111580215A (en) * | 2019-02-15 | 2020-08-25 | 效能光子私人有限责任公司 | Photonic integrated circuit with improved electrical isolation between N-type contacts |
US10845550B1 (en) * | 2019-10-18 | 2020-11-24 | The Boeing Company | Input coupler for chip-scale laser receiver device |
US20210157178A1 (en) * | 2019-11-22 | 2021-05-27 | Raytheon Bbn Technologies Corp. | Hetergenous integration and electro-optic modulation of iii-nitride photonics on a silicon photonic platform |
US20210249840A1 (en) * | 2020-02-12 | 2021-08-12 | Sumitomo Electric Industries, Ltd. | Semiconductor optical device and method for producing semiconductor optical device |
US11125689B2 (en) * | 2018-07-13 | 2021-09-21 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits |
US11215757B2 (en) | 2019-07-18 | 2022-01-04 | Sumitomo Electric Industries, Ltd. | Spot size converter and manufacturing method of the same |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6330378B1 (en) * | 2000-05-12 | 2001-12-11 | The Trustees Of Princeton University | Photonic integrated detector having a plurality of asymmetric waveguides |
US7251406B2 (en) * | 2000-12-14 | 2007-07-31 | Shipley Company, L.L.C. | Optical waveguide termination with vertical and horizontal mode shaping |
US6483863B2 (en) | 2001-01-19 | 2002-11-19 | The Trustees Of Princeton University | Asymmetric waveguide electroabsorption-modulated laser |
WO2002077682A2 (en) * | 2001-03-27 | 2002-10-03 | Metrophotonics Inc. | Vertical integration of active devices with passive semiconductor waveguides |
US6898352B2 (en) * | 2001-05-17 | 2005-05-24 | Sioptical, Inc. | Optical waveguide circuit including passive optical waveguide device combined with active optical waveguide device, and method for making same |
US6751396B2 (en) * | 2001-12-26 | 2004-06-15 | Lucent Technologies Inc. | Integrated optical devices and method of fabrication therefor |
GB2388917A (en) * | 2002-05-25 | 2003-11-26 | Bookham Technology Plc | Semiconductor optical waveguide with a varying taper |
US6989284B2 (en) * | 2002-05-31 | 2006-01-24 | Intel Corporation | Fabrication of a waveguide taper through ion implantation |
US6956983B2 (en) * | 2002-05-31 | 2005-10-18 | Intel Corporation | Epitaxial growth for waveguide tapering |
GB2389962B (en) * | 2002-06-21 | 2006-01-04 | Kamelian Ltd | Reduction of truncation loss of tapered active waveguide |
US7221826B2 (en) | 2002-10-08 | 2007-05-22 | Tdk Corporation | Spot-size transformer, method of producing spot-size transformer and waveguide-embedded optical circuit using spot-size transformer |
JP2004151689A (en) * | 2002-10-08 | 2004-05-27 | Tdk Corp | Spot size converting element and waveguide embedded type optical circuit using the same |
US7190852B2 (en) * | 2002-10-15 | 2007-03-13 | Covega Corporation | Semiconductor devices with curved waveguides and mode transformers |
KR100617693B1 (en) * | 2003-08-20 | 2006-08-28 | 삼성전자주식회사 | Semiconductor optical amplifier with optical detector and method for manufacturing the same |
US20050105853A1 (en) * | 2003-11-13 | 2005-05-19 | Ansheng Liu | Method and apparatus for dual tapering an optical waveguide |
US7672558B2 (en) | 2004-01-12 | 2010-03-02 | Honeywell International, Inc. | Silicon optical device |
JP2008529316A (en) * | 2005-02-02 | 2008-07-31 | コヴェガ・インコーポレーテッド | Semiconductor optical amplifier with non-uniform injection current density. |
US7305157B2 (en) * | 2005-11-08 | 2007-12-04 | Massachusetts Institute Of Technology | Vertically-integrated waveguide photodetector apparatus and related coupling methods |
US7362443B2 (en) | 2005-11-17 | 2008-04-22 | Honeywell International Inc. | Optical gyro with free space resonator and method for sensing inertial rotation rate |
US7400200B2 (en) * | 2006-03-17 | 2008-07-15 | Avago Technologies Wireless Ip Pte Ltd | Linear variable gain traveling wave amplifier |
US7463360B2 (en) * | 2006-04-18 | 2008-12-09 | Honeywell International Inc. | Optical resonator gyro with integrated external cavity beam generator |
US7454102B2 (en) | 2006-04-26 | 2008-11-18 | Honeywell International Inc. | Optical coupling structure |
US7535576B2 (en) * | 2006-05-15 | 2009-05-19 | Honeywell International, Inc. | Integrated optical rotation sensor and method for sensing rotation rate |
US7532784B2 (en) * | 2006-07-31 | 2009-05-12 | Onechip Photonics Inc. | Integrated vertical wavelength (de)multiplexer |
CN101595410B (en) * | 2006-11-21 | 2011-07-13 | 奥尼奇普菲托尼克斯有限公司 | Integrated optics arrangement for wavelength (de)multiplexing in a multi-guide vertical stack |
DE102007058950A1 (en) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Edge-emitting semiconductor laser has laser radiation that produces active layer, two waveguides and two coating layers, where active layer is embedded in former waveguide layer |
KR100937589B1 (en) * | 2007-11-07 | 2010-01-20 | 한국전자통신연구원 | Hybrid LASER Diode |
US7539373B1 (en) * | 2007-11-26 | 2009-05-26 | Onechip Photonics Inc. | Integrated lateral mode converter |
KR100958338B1 (en) | 2007-12-18 | 2010-05-17 | 한국전자통신연구원 | Optical amplifier integrated super luminescent diode and external cavity laser using this |
WO2009098829A1 (en) * | 2008-02-06 | 2009-08-13 | Nec Corporation | Optical waveguide and method for manufacturing same |
US8224134B2 (en) * | 2009-04-03 | 2012-07-17 | Alcatel-Lucent Usa Inc. | Optoelectronic receiver |
US8472766B2 (en) * | 2009-08-14 | 2013-06-25 | Massachusetts Institute Of Technology | Waveguide coupler having continuous three-dimensional tapering |
KR101556821B1 (en) | 2010-04-13 | 2015-10-01 | 지이 비디오 컴프레션, 엘엘씨 | Inheritance in sample array multitree subdivision |
WO2012129196A2 (en) * | 2011-03-20 | 2012-09-27 | Robertson William M | Surface electromagnetic waves in photonic band gap multilayers |
US8625942B2 (en) * | 2011-03-30 | 2014-01-07 | Intel Corporation | Efficient silicon-on-insulator grating coupler |
WO2012171557A1 (en) | 2011-06-15 | 2012-12-20 | Universidad Pública de Navarra | Integration platform incorporating optical waveguide structures |
WO2013010058A1 (en) | 2011-07-13 | 2013-01-17 | Innolume Gmbh | Adiabatic mode-profile conversion by selective oxidation for photonic integrated circuit |
US8755650B2 (en) * | 2011-09-08 | 2014-06-17 | Seagate Technology Llc | Gradient index optical waveguide coupler |
CN104937737B (en) | 2012-10-01 | 2017-04-05 | 康宁股份有限公司 | OLED and the display device including it including light extraction substructure |
US9202660B2 (en) | 2013-03-13 | 2015-12-01 | Teledyne Wireless, Llc | Asymmetrical slow wave structures to eliminate backward wave oscillations in wideband traveling wave tubes |
US9419412B2 (en) * | 2013-11-13 | 2016-08-16 | Agency For Science, Technology And Research | Integrated laser and method of fabrication thereof |
EP3087645A4 (en) | 2013-12-27 | 2017-08-16 | Intel Corporation | Asymmetric optical waveguide grating resonators&dbr lasers |
JP6394454B2 (en) * | 2015-03-24 | 2018-09-26 | 住友電気工業株式会社 | Mach-Zehnder modulator |
WO2017032754A1 (en) * | 2015-08-21 | 2017-03-02 | Universiteit Gent | On-chip broadband light source |
CN107046229A (en) * | 2016-02-05 | 2017-08-15 | 南京威宁锐克信息技术有限公司 | The preparation method and laser array of a kind of laser array |
US10431253B1 (en) | 2016-05-19 | 2019-10-01 | Seagate Technology, Llc | Waveguide input coupler with asymmetric taper |
KR101930369B1 (en) * | 2016-08-04 | 2018-12-18 | 국민대학교산학협력단 | Optical interconnect apparatus and Optical device integration apparatus using silicon bulk substrate |
WO2018117077A1 (en) * | 2016-12-19 | 2018-06-28 | 古河電気工業株式会社 | Optical integrated element and optical transmitter module |
WO2019156189A1 (en) * | 2018-02-08 | 2019-08-15 | 古河電気工業株式会社 | Optical integrated element and optical module |
JP7322646B2 (en) * | 2019-10-01 | 2023-08-08 | 住友電気工業株式会社 | WAVELENGTH TUNABLE LASER DEVICE AND MANUFACTURING METHOD THEREOF |
Citations (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5500867A (en) * | 1994-09-13 | 1996-03-19 | At&T Corp. | Laser package having an impedance matching transformer |
US5574742A (en) * | 1994-05-31 | 1996-11-12 | Lucent Technologies Inc. | Tapered beam expander waveguide integrated with a diode laser |
US5715268A (en) * | 1994-01-24 | 1998-02-03 | Sdl, Inc. | Laser amplifiers with suppressed self oscillation |
US5721750A (en) * | 1995-04-13 | 1998-02-24 | Korea Advanced Institute Of Science And Technology | Laser diode for optoelectronic integrated circuit and a process for preparing the same |
US5917967A (en) * | 1997-05-21 | 1999-06-29 | The United States Of America As Represented By The Secretary Of The Army | Techniques for forming optical electronic integrated circuits having interconnects in the form of semiconductor waveguides |
US6031851A (en) * | 1996-10-11 | 2000-02-29 | Nec Corporation | Mode-locked semiconductor laser and method of driving the same |
US6167073A (en) * | 1998-07-23 | 2000-12-26 | Wisconsin Alumni Research Foundation | High power laterally antiguided semiconductor light source with reduced transverse optical confinement |
US6215295B1 (en) * | 1997-07-25 | 2001-04-10 | Smith, Iii Richard S. | Photonic field probe and calibration means thereof |
US6246965B1 (en) * | 1998-10-01 | 2001-06-12 | Lucent Technologies Inc. | Pre-distortion tuning for analog lasers |
US6310995B1 (en) * | 1998-11-25 | 2001-10-30 | University Of Maryland | Resonantly coupled waveguides using a taper |
US6314117B1 (en) * | 1998-12-16 | 2001-11-06 | Quan Photonics, Inc | Laser diode package |
US6330387B1 (en) * | 1996-11-08 | 2001-12-11 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Coupled plasmon-waveguide resonance spectroscopic device and method for measuring film properties in the ultraviolet and infrared spectral ranges |
US6339496B1 (en) * | 1999-06-22 | 2002-01-15 | University Of Maryland | Cavity-less vertical semiconductor optical amplifier |
US20020018504A1 (en) * | 2000-06-20 | 2002-02-14 | Coldren Larry A. | Tunable laser cavity sensor chip |
US6381380B1 (en) * | 1998-06-24 | 2002-04-30 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
US20020097941A1 (en) * | 2001-01-19 | 2002-07-25 | Forrest Stephen R. | Asymmetric waveguide electroabsorption-modulated laser |
US6490044B1 (en) * | 1997-05-30 | 2002-12-03 | Jds Uniphase Corporation | Optimized interferometrically modulated array source |
US20030012244A1 (en) * | 2001-07-11 | 2003-01-16 | Krasulick Stephen B. | Electro-absorption modulated laser with high operating temperature tolerance |
US6519374B1 (en) * | 1999-03-30 | 2003-02-11 | Uniphase Corporation | Predistortion arrangement using mixers in nonlinear electro-optical applications |
US6668103B2 (en) * | 2000-01-26 | 2003-12-23 | Nec Corporation | Optical modulator with monitor having 3-dB directional coupler or 2-input, 2-output multimode interferometric optical waveguide |
US6795622B2 (en) * | 1998-06-24 | 2004-09-21 | The Trustess Of Princeton University | Photonic integrated circuits |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2337449A1 (en) * | 1975-12-29 | 1977-07-29 | Tokyo Inst Tech | Optical integrated circuit with waveguide - has mesa thin layer oscillator on waveguide coupled via direction coupler |
GB2105863B (en) | 1981-09-10 | 1985-04-03 | Standard Telephones Cables Ltd | Optical waveguiding devices |
JPS58114476A (en) * | 1981-12-28 | 1983-07-07 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser |
US4745607A (en) * | 1986-10-08 | 1988-05-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Interlayer directional coupling in antiresonant reflecting optical waveguides |
US5140149A (en) | 1989-03-10 | 1992-08-18 | Canon Kabushiki Kaisha | Optical apparatus using wavelength selective photocoupler |
US5039189A (en) | 1990-04-06 | 1991-08-13 | Lockheed Missiles & Space Company, Inc. | Optical signal distribution network and method of converting independent optical/electrical signals |
US5078516A (en) * | 1990-11-06 | 1992-01-07 | Bell Communications Research, Inc. | Tapered rib waveguides |
US5208878A (en) | 1990-11-28 | 1993-05-04 | Siemens Aktiengesellschaft | Monolithically integrated laser-diode-waveguide combination |
JP2545719B2 (en) * | 1991-03-15 | 1996-10-23 | 東京工業大学長 | Stacked optical amplifier |
FR2684823B1 (en) * | 1991-12-04 | 1994-01-21 | Alcatel Alsthom Cie Gle Electric | SEMICONDUCTOR OPTICAL COMPONENT WITH EXTENDED OUTPUT MODE AND MANUFACTURING METHOD THEREOF. |
DE59203842D1 (en) | 1992-01-20 | 1995-11-02 | Siemens Ag | Tunable laser diode. |
JP3053966B2 (en) * | 1992-06-01 | 2000-06-19 | キヤノン株式会社 | Directional coupler filter |
US5355386A (en) | 1992-11-17 | 1994-10-11 | Gte Laboratories Incorporated | Monolithically integrated semiconductor structure and method of fabricating such structure |
JPH06174982A (en) * | 1992-12-03 | 1994-06-24 | Nippon Telegr & Teleph Corp <Ntt> | Optical coupling device |
JP2765793B2 (en) | 1993-03-16 | 1998-06-18 | シャープ株式会社 | Mode separation element and pickup for magneto-optical disk |
JP2606079B2 (en) | 1993-06-25 | 1997-04-30 | 日本電気株式会社 | Optical semiconductor device |
US5663824A (en) | 1993-11-02 | 1997-09-02 | Lucent Technologies Inc. | Optical modulators as monolithically integrated optical isolators |
DE59500334D1 (en) | 1994-01-19 | 1997-07-31 | Siemens Ag | Tunable laser diode |
US5844929A (en) | 1994-02-24 | 1998-12-01 | British Telecommunications Public Limited Company | Optical device with composite passive and tapered active waveguide regions |
JPH07326820A (en) | 1994-05-30 | 1995-12-12 | Mitsubishi Electric Corp | Variable wavelength semiconductor laser device |
CN1061478C (en) | 1994-09-09 | 2001-01-31 | 特尔科迪亚技术股份有限公司 | High-temperature, uncooled diode laser |
JP2669374B2 (en) * | 1995-01-18 | 1997-10-27 | 日本電気株式会社 | Semiconductor laser |
JP3390893B2 (en) * | 1995-02-24 | 2003-03-31 | 富士通株式会社 | Semiconductor laser device |
US5623363A (en) | 1995-02-27 | 1997-04-22 | Lucent Technologies Inc. | Semiconductor light source having a spectrally broad, high power optical output |
JP3468612B2 (en) * | 1995-06-13 | 2003-11-17 | 株式会社日立製作所 | Semiconductor laser device |
US6198863B1 (en) | 1995-10-06 | 2001-03-06 | British Telecommunications Public Limited Company | Optical filters |
DE19613701A1 (en) | 1996-03-29 | 1997-10-02 | Hertz Inst Heinrich | Integrated optical field transformer |
US5708671A (en) | 1996-04-17 | 1998-01-13 | Semi-Custom Logic, Inc. | Tunable gigihertz all-optical clock generator and method using same |
JP3833313B2 (en) * | 1996-08-30 | 2006-10-11 | 株式会社日立製作所 | Semiconductor laser element |
JP3885978B2 (en) * | 1997-01-31 | 2007-02-28 | シャープ株式会社 | Gain-coupled distributed feedback semiconductor laser device |
US5859866A (en) | 1997-02-07 | 1999-01-12 | The Trustees Of Princeton University | Photonic integration using a twin waveguide structure |
JP3233067B2 (en) | 1997-05-21 | 2001-11-26 | 日本電気株式会社 | Waveguide device, waveguide-type multiplexing / demultiplexing device, and waveguide integrated circuit |
US5852687A (en) | 1997-07-09 | 1998-12-22 | Trw Inc. | Integrated optical time delay unit |
AU749314B2 (en) | 1998-05-15 | 2002-06-20 | Unicast Communications Corporation | A technique for implementing browser-initiated network-distributed advertising and for interstitially displaying an advertisement |
JP3264369B2 (en) | 1999-02-05 | 2002-03-11 | 日本電気株式会社 | Optical modulator integrated semiconductor laser and method of manufacturing the same |
US6330389B1 (en) * | 1999-11-18 | 2001-12-11 | Lucent Technologies, Inc. | System for organizing optical fibers |
US6330378B1 (en) | 2000-05-12 | 2001-12-11 | The Trustees Of Princeton University | Photonic integrated detector having a plurality of asymmetric waveguides |
WO2002077682A2 (en) | 2001-03-27 | 2002-10-03 | Metrophotonics Inc. | Vertical integration of active devices with passive semiconductor waveguides |
-
1999
- 1999-06-22 US US09/337,785 patent/US6381380B1/en not_active Expired - Fee Related
- 1999-06-23 JP JP2000556265A patent/JP2002519842A/en active Pending
- 1999-06-23 CA CA002335942A patent/CA2335942C/en not_active Expired - Fee Related
- 1999-06-23 WO PCT/US1999/014219 patent/WO1999067665A1/en active Application Filing
- 1999-06-23 AU AU48295/99A patent/AU4829599A/en not_active Abandoned
- 1999-06-23 EP EP99931877A patent/EP1090317A4/en not_active Ceased
-
2001
- 2001-10-18 US US09/982,001 patent/US7302124B2/en not_active Expired - Fee Related
-
2003
- 2003-08-15 US US10/642,316 patent/US6819814B2/en not_active Expired - Fee Related
-
2004
- 2004-11-08 US US10/983,366 patent/US7327910B2/en not_active Expired - Fee Related
Patent Citations (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5715268A (en) * | 1994-01-24 | 1998-02-03 | Sdl, Inc. | Laser amplifiers with suppressed self oscillation |
US5574742A (en) * | 1994-05-31 | 1996-11-12 | Lucent Technologies Inc. | Tapered beam expander waveguide integrated with a diode laser |
US5500867A (en) * | 1994-09-13 | 1996-03-19 | At&T Corp. | Laser package having an impedance matching transformer |
US5721750A (en) * | 1995-04-13 | 1998-02-24 | Korea Advanced Institute Of Science And Technology | Laser diode for optoelectronic integrated circuit and a process for preparing the same |
US6031851A (en) * | 1996-10-11 | 2000-02-29 | Nec Corporation | Mode-locked semiconductor laser and method of driving the same |
US6330387B1 (en) * | 1996-11-08 | 2001-12-11 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Coupled plasmon-waveguide resonance spectroscopic device and method for measuring film properties in the ultraviolet and infrared spectral ranges |
US5917967A (en) * | 1997-05-21 | 1999-06-29 | The United States Of America As Represented By The Secretary Of The Army | Techniques for forming optical electronic integrated circuits having interconnects in the form of semiconductor waveguides |
US6311003B1 (en) * | 1997-05-21 | 2001-10-30 | The United States Of America As Represented By The Secretary Of The Army | Techniques for forming optical electronic integrated circuits having interconnects in the form of semiconductor waveguides |
US6051445A (en) * | 1997-05-21 | 2000-04-18 | The United States Of America As Represented By The Secretary Of The Army | Techniques for forming optical electronic integrated circuits having interconnects in the form of semiconductor waveguides |
US6490044B1 (en) * | 1997-05-30 | 2002-12-03 | Jds Uniphase Corporation | Optimized interferometrically modulated array source |
US6215295B1 (en) * | 1997-07-25 | 2001-04-10 | Smith, Iii Richard S. | Photonic field probe and calibration means thereof |
US6819814B2 (en) * | 1998-06-24 | 2004-11-16 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
US6795622B2 (en) * | 1998-06-24 | 2004-09-21 | The Trustess Of Princeton University | Photonic integrated circuits |
US6381380B1 (en) * | 1998-06-24 | 2002-04-30 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
US6167073A (en) * | 1998-07-23 | 2000-12-26 | Wisconsin Alumni Research Foundation | High power laterally antiguided semiconductor light source with reduced transverse optical confinement |
US6246965B1 (en) * | 1998-10-01 | 2001-06-12 | Lucent Technologies Inc. | Pre-distortion tuning for analog lasers |
US6310995B1 (en) * | 1998-11-25 | 2001-10-30 | University Of Maryland | Resonantly coupled waveguides using a taper |
US6314117B1 (en) * | 1998-12-16 | 2001-11-06 | Quan Photonics, Inc | Laser diode package |
US6519374B1 (en) * | 1999-03-30 | 2003-02-11 | Uniphase Corporation | Predistortion arrangement using mixers in nonlinear electro-optical applications |
US6339496B1 (en) * | 1999-06-22 | 2002-01-15 | University Of Maryland | Cavity-less vertical semiconductor optical amplifier |
US6668103B2 (en) * | 2000-01-26 | 2003-12-23 | Nec Corporation | Optical modulator with monitor having 3-dB directional coupler or 2-input, 2-output multimode interferometric optical waveguide |
US20020018504A1 (en) * | 2000-06-20 | 2002-02-14 | Coldren Larry A. | Tunable laser cavity sensor chip |
US6483863B2 (en) * | 2001-01-19 | 2002-11-19 | The Trustees Of Princeton University | Asymmetric waveguide electroabsorption-modulated laser |
US20020097941A1 (en) * | 2001-01-19 | 2002-07-25 | Forrest Stephen R. | Asymmetric waveguide electroabsorption-modulated laser |
US20030012244A1 (en) * | 2001-07-11 | 2003-01-16 | Krasulick Stephen B. | Electro-absorption modulated laser with high operating temperature tolerance |
Cited By (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6465269B2 (en) * | 1997-05-02 | 2002-10-15 | Nec Corporation | Semiconductor optical device and method of manufacturing the same |
US7302124B2 (en) | 1998-06-24 | 2007-11-27 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
US20030007719A1 (en) * | 1998-06-24 | 2003-01-09 | Forrest Stephen R. | Photonic integrated circuits |
US20040052445A1 (en) * | 1998-06-24 | 2004-03-18 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
US6819814B2 (en) * | 1998-06-24 | 2004-11-16 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
US7327910B2 (en) | 1998-06-24 | 2008-02-05 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
US20020154393A1 (en) * | 2001-04-24 | 2002-10-24 | Nec Corporation | Semiconductor optical amplifier and semiconductor laser |
US6813068B2 (en) * | 2001-04-24 | 2004-11-02 | Nec Corporation | Semiconductor optical amplifier and semiconductor laser |
US20040057653A1 (en) * | 2002-09-25 | 2004-03-25 | Sumitomo Electric Industries, Ltd. | Integrated optical element, integrated optical element fabrication method, and light source module |
US6935792B2 (en) | 2002-10-21 | 2005-08-30 | General Electric Company | Optoelectronic package and fabrication method |
KR100594037B1 (en) | 2004-01-19 | 2006-06-30 | 삼성전자주식회사 | Semiconductor optical device having the spot size conversion region |
US20050185889A1 (en) * | 2004-02-18 | 2005-08-25 | Trustees Of Princeton University | Polarization insensitive semiconductor optical amplifier |
US7373048B2 (en) | 2004-02-18 | 2008-05-13 | Trustees Of Princeton University | Polarization insensitive semiconductor optical amplifier |
US7230963B2 (en) | 2004-04-14 | 2007-06-12 | The Trustees Of Princeton University | Monolithic wavelength stabilized asymmetric laser |
US20060013273A1 (en) * | 2004-04-14 | 2006-01-19 | The Trustees Of Princeton University | Monolithic wavelength stabilized asymmetric laser |
US20070077017A1 (en) * | 2005-09-30 | 2007-04-05 | The Trustees Of Princeton University | Photonic integrated devices having reduced absorption loss |
US7333689B2 (en) | 2005-09-30 | 2008-02-19 | The Trustees Of Princeton University | Photonic integrated devices having reduced absorption loss |
US7343061B2 (en) | 2005-11-15 | 2008-03-11 | The Trustees Of Princeton University | Integrated photonic amplifier and detector |
US7826693B2 (en) | 2006-10-26 | 2010-11-02 | The Trustees Of Princeton University | Monolithically integrated reconfigurable optical add-drop multiplexer |
US8363314B2 (en) * | 2006-12-07 | 2013-01-29 | Electronics And Telecommunications Research Institute | Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) |
US20110150406A1 (en) * | 2006-12-07 | 2011-06-23 | Electronics And Telecommunications Research Institute | Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) |
EP1939955A3 (en) * | 2006-12-27 | 2015-12-23 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Optical device and system and method for fabricating the device |
US20120093187A1 (en) * | 2009-05-05 | 2012-04-19 | Johannes Bernhard Koeth | DFB Laser Diode Having a Lateral Coupling for Large Output Power |
US8855156B2 (en) * | 2009-05-05 | 2014-10-07 | Nanoplus Gmbh Nanosystems And Technologies | DFB laser diode having a lateral coupling for large output power |
WO2011123111A1 (en) * | 2010-03-31 | 2011-10-06 | Hewlett-Packard Development Company, L.P. | Waveguide system and methods |
US9014526B2 (en) | 2010-03-31 | 2015-04-21 | Hewlett-Packard Development Company, L.P. | Waveguide system and methods |
US20140321801A1 (en) * | 2013-04-29 | 2014-10-30 | International Business Machnes Corporation | Vertical bend waveguide coupler for photonics applications |
US8903210B2 (en) * | 2013-04-29 | 2014-12-02 | International Business Machines Corporation | Vertical bend waveguide coupler for photonics applications |
US9240673B2 (en) * | 2014-01-20 | 2016-01-19 | Rockley Photonics Limited | Tunable SOI laser |
CN105826812A (en) * | 2015-01-27 | 2016-08-03 | 华为技术有限公司 | Tunable laser and method of tuning laser |
EP3051638A1 (en) * | 2015-01-27 | 2016-08-03 | Huawei Technologies Co., Ltd. | Tunable laser and method of tuning a laser |
US9570886B2 (en) | 2015-01-27 | 2017-02-14 | Huawei Technologies Co., Ltd. | Tunable laser and method of tuning a laser |
US20210404957A1 (en) * | 2018-07-13 | 2021-12-30 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Highly Stable Semiconductor Lasers and Sensors for III-V and Silicon Photonic Integrated Circuits |
US11125689B2 (en) * | 2018-07-13 | 2021-09-21 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits |
US20210389242A1 (en) * | 2018-07-13 | 2021-12-16 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Highly Stable Semiconductor Lasers and Sensors for III-V and Silicon Photonic Integrated Circuits |
US11709135B2 (en) * | 2018-07-13 | 2023-07-25 | The Government of the United States of America, as represented by the Secretary of the Naw | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits |
US11761892B2 (en) * | 2018-07-13 | 2023-09-19 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits |
CN111580215A (en) * | 2019-02-15 | 2020-08-25 | 效能光子私人有限责任公司 | Photonic integrated circuit with improved electrical isolation between N-type contacts |
US11215757B2 (en) | 2019-07-18 | 2022-01-04 | Sumitomo Electric Industries, Ltd. | Spot size converter and manufacturing method of the same |
US10845550B1 (en) * | 2019-10-18 | 2020-11-24 | The Boeing Company | Input coupler for chip-scale laser receiver device |
US20210157178A1 (en) * | 2019-11-22 | 2021-05-27 | Raytheon Bbn Technologies Corp. | Hetergenous integration and electro-optic modulation of iii-nitride photonics on a silicon photonic platform |
US11754865B2 (en) * | 2019-11-22 | 2023-09-12 | Raytheon Bbn Technologies Corp. | Hetergenous integration and electro-optic modulation of III-nitride photonics on a silicon photonic platform |
US20210249840A1 (en) * | 2020-02-12 | 2021-08-12 | Sumitomo Electric Industries, Ltd. | Semiconductor optical device and method for producing semiconductor optical device |
US11735888B2 (en) * | 2020-02-12 | 2023-08-22 | Sumitomo Electric Industries, Ltd. | Semiconductor optical device and method for producing semiconductor optical device |
Also Published As
Publication number | Publication date |
---|---|
EP1090317A1 (en) | 2001-04-11 |
JP2002519842A (en) | 2002-07-02 |
US6381380B1 (en) | 2002-04-30 |
US20040052445A1 (en) | 2004-03-18 |
US7302124B2 (en) | 2007-11-27 |
US6819814B2 (en) | 2004-11-16 |
US20050094924A1 (en) | 2005-05-05 |
CA2335942C (en) | 2007-12-04 |
EP1090317A4 (en) | 2005-01-19 |
US7327910B2 (en) | 2008-02-05 |
AU4829599A (en) | 2000-01-10 |
CA2335942A1 (en) | 1999-12-29 |
WO1999067665A1 (en) | 1999-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6381380B1 (en) | Twin waveguide based design for photonic integrated circuits | |
US6330378B1 (en) | Photonic integrated detector having a plurality of asymmetric waveguides | |
Griffel et al. | Low-threshold InGaAsP ring lasers fabricated using bi-level dry etching | |
US8319229B2 (en) | Optical semiconductor device and method for manufacturing the same | |
US5127081A (en) | Optical branching waveguide | |
US5699378A (en) | Optical comb filters used with waveguide, laser and manufacturing method of same | |
Studenkov et al. | Efficient coupling in integrated twin-waveguide lasers using waveguide tapers | |
US5859866A (en) | Photonic integration using a twin waveguide structure | |
US6639930B2 (en) | Multi-level closed loop resonators and method for fabricating same | |
US20060176544A1 (en) | Folded cavity semiconductor optical amplifier (FCSOA) | |
EP1366547B1 (en) | Improvements in or relating to lasers | |
Studenkov et al. | Asymmetric twin-waveguide 1.55-μm wavelength laser with a distributed Bragg reflector | |
US20020181529A1 (en) | Single-transverse-mode laser diode with multi-mode waveguide region and manufacturing method of the same | |
Segawa et al. | Full $ C $-Band Tuning Operation of Semiconductor Double-Ring Resonator-Coupled Laser With Low Tuning Current | |
Studenkov et al. | Monolithic integration of a quantum-well laser and an optical amplifier using an asymmetric twin-waveguide structure | |
Bach et al. | Wavelength stabilized single-mode lasers by coupled micro-square resonators | |
Hernandez-Gil et al. | A tunable MQW-DBR laser with a monolithically integrated InGaAsP/InP directional coupler switch | |
Yoon et al. | Monolithically integrated tunable laser using double-ring resonators with a tilted multimode interference coupler | |
JP2000504152A (en) | Semiconductor laser | |
Harmsma et al. | Multi wavelength lasers fabricated using selective area chemical beam epitaxy | |
Saini et al. | Lossless 1 x 2 optical switch monolithically integrated on a passive active resonant coupler (PARC) platform | |
JPH05114762A (en) | Optically coupled device | |
Han et al. | Self-aligned high-quality total internal reflection mirrors | |
Kim et al. | Fabrication of coupled-ring reflector laser diodes consisted of total internal reflection mirrors and multimode interference coupler | |
Takeuchi et al. | Bend Losses of Miniature Single Mode GaAs/AlGaAs Waveguides |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
CC | Certificate of correction | ||
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20191127 |