US20020025649A1 - Method of manufacturing a capacitor in a semiconductor device - Google Patents

Method of manufacturing a capacitor in a semiconductor device Download PDF

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US20020025649A1
US20020025649A1 US09/942,645 US94264501A US2002025649A1 US 20020025649 A1 US20020025649 A1 US 20020025649A1 US 94264501 A US94264501 A US 94264501A US 2002025649 A1 US2002025649 A1 US 2002025649A1
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film
capacitor
dielectric film
tungsten
underlying
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Han Song
You Kim
Chan Lim
Chang Park
Kyong Kim
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers

Definitions

  • the invention relates generally to a method of manufacturing a capacitor in a semiconductor device, and more particularly to, a method of manufacturing a capacitor in a semiconductor device which can prevent oxidization of the surface of an underlying electrode to improve the characteristic of the leak current of a Ta 2 O 5 capacitor, upon a thermal treatment process performed after Ta 2 O 5 is deposited in order to form a dielectric film, in a Ta 2 O 5 capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode.
  • MIM Metal Insulator Metal
  • a Ta 2 O 5 capacitor in a memory device when manufacturing a Ta 2 O 5 capacitor in a memory device, if metal materials such as Tungsten are used as underlying electrode materials, the work function of the metal materials with poly-silicon is large. Thus, the thickness of the effective oxide film Tox can be reduced and thus the leak current in the thickness of the same effective oxide film can also be reduced. Further, the value of ⁇ C depending on the bias voltage is small.
  • a Ta 2 O 5 dielectric film lacks oxygen in the film formed by Ta 2 O 5 deposition process and also contains impurities such as carbon or hydrogen etc., in order to secure the dielectric characteristic of the Ta 2 O 5 capacitor, oxygen must be flowed into it and a subsequent process for removing impurities must be performed after the Ta 2 O 5 deposition is completed.
  • This subsequent process is mainly thermally performed under oxygen atmosphere at a higher temperature, thus securing the dielectric characteristic of a Ta 2 O 5 dielectric film.
  • the temperature of the thermal process is too high or the time of the thermal treatment is too long, upon thermal treatment process, the surface of the underlying tungsten electrode is oxidized to form a WO 3 film.
  • the WO 3 film has the dielectric constant of about 42, which is higher than that of Ta 2 O 5 dielectric film having about 25.
  • oxygen within the Ta 2 O 5 dielectric film can be diffused into the underlying tungsten electrode.
  • due to the difference of the thermal expansion coefficient with the Ta 2 O 5 dielectric film there is a problem that the characteristic of the leak current of the Ta 2 O 5 capacitor becomes degraded since a phenomenon of film lifting of the film is generated.
  • MIM Metal Insulator Metal
  • a method of manufacturing a capacitor in a semiconductor device is characterized in that it comprises the steps of forming an underlying tungsten electrode on a substrate in which an underlying structure is formed; forming a WO 3 film on the surface of the underlying tungsten electrode; forming a Ta 2 O 5 dielectric film on the WO 3 film; and forming an upper electrode on the Ta 2 O 5 dielectric film.
  • FIGS. 1A through 1D are sectional views for illustrating a method of manufacturing a capacitor in a semiconductor device according to the present invention.
  • FIG. 2 is a graph of I-V characteristic for showing the leak current characteristic of a capacitor depending on a thermal process under a low temperature oxygen atmosphere before a Ta 2 O 5 dielectric film is formed.
  • FIGS. 1A through 1D are sectional views for illustrating a method of manufacturing a capacitor in a semiconductor device according to the present invention.
  • a first doped poly-silicon layer 1 is formed on a substrate 10 in which an underlying structure is formed. Then, a barrier metal layer 2 is formed on the first doped poly-silicon layer 1 .
  • the barrier metal layer 2 is formed of a Ti film and a TiN film.
  • the Ti film is formed by depositing Ti in 100 through 200 ⁇ thickness by means of sputtering method.
  • the TiN film is formed in 100 through 200 ⁇ thickness by means of metal organic chemical vapor deposition (MOCVD) method using Ti(N(CH 3 ) 2 ) 4 (TDMAT) as raw materials and using He and Ar as carrier gases.
  • MOCVD metal organic chemical vapor deposition
  • the deposition conditions include 200-300 sccm in the flow rate of raw materials; 100 through 300 sccm in the flow rate of He and Ar, respectively, being carrier gases; 2-10 Torr in the pressure within the reactive furnace and 300-500° C. in the temperature within the reactive furnace.
  • a plasma process is performed for about 20 through 50 seconds with the power of 500 through 1000 W.
  • a tungsten film 3 is formed on the barrier metal layer 2 to complete an underlying electrode.
  • the tungsten film 3 is formed by chemical vapor deposition (CVD) method under the conditions that WF 6 is used as raw materials, H 2 is used as a reactive gas, the pressure within the reactive furnace is maintained at 80-110 Torr, and the temperature within the reactive furnace is maintained at the temperature of 350-450° C.
  • CVD chemical vapor deposition
  • a WO 3 film 100 is forcedly formed on the surface of the tungsten film 3 . Then, a Ta 2 O 5 dielectric film 4 is formed on the WO 3 film 100 .
  • the cleaning process is performed using 50:1 HF for 30 through 50 seconds.
  • the WO 3 film 100 is formed in thickness of 10-30 ⁇ by oxidizing the tungsten film 3 by means of Rapid Thermal Anneal (RTA), plasma process or UV/O 3 process etc. under a low temperature oxygen atmosphere.
  • the WO 3 film 100 formed thus is good in the quality of the film and also fills the grain boundary of the tungsten film 3 with oxygen atoms.
  • the rapid thermal process is performed under the atmospheres of O 2 or N 2 O at the temperature of 450-550° C. for 5-20 seconds.
  • the plasma process is performed under the atmospheres of O 2 or N 2 O at the temperature of 300-550° C. for 30-120 seconds by the power of 200-500 W.
  • the UV/O 3 process is performed at the temperature of 300-550° C. for 2-5 minutes at the strength of 15-30 mW/cm 2 .
  • the Ta 2 O 5 dielectric film 4 is deposited with use Ta 2 O 5 under the conditions that Ta(C 2 H 5 O) 5 is used as raw materials, N 2 gas and O 2 gas is used as a carrier gas and an oxidizer, respectively, the flow rate of the N 2 gas is maintained at 350-450 sccm, the flow rate of the O 2 gas is maintained at 20-50 sccm, the pressure within the reactive furnace is maintained at 0.1-0.6 Torr, and the temperature within the reactive furnace is maintained at 350-450° C.
  • the Ta 2 O 5 dielectric film 4 is experienced by a rapid thermal process by mixing inactive gases such as N 2 , Ar, He etc. in N 2 O gas or O 2 gas at the temperature of 550-700° C. for 20-60 seconds, or by a plasma annealing process under oxygen atmosphere using O 2 gas or N 2 O gas by which a plasma power of 10-100 W is applied at the temperature of less 350° C.
  • inactive gases such as N 2 , Ar, He etc.
  • N 2 O gas or O 2 gas at the temperature of 550-700° C. for 20-60 seconds
  • a TiN film 5 and a second doped poly-silicon layer 6 are sequentially formed on the Ta 2 O 5 dielectric film 4 , thus completing an upper electrode of a capacitor.
  • a Ta 2 O 5 capacitor of a MIM structure is manufactured.
  • the TiN film 5 is formed in thickness of 200-500 ⁇ by means of chemical vapor deposition (CVD) method under the conditions that TiCl 4 is used as raw materials, NH 3 gas is used as a reactive gas, the temperature within the reactive furnace is maintained at 300-500° C. and the pressure within the reactive furnace is maintained at 0.1-2 Torr.
  • the second poly-silicon layer 6 is formed in thickness of 800-1200 ⁇ .
  • the TiN film 5 functions to reduce the work function with the second poly-silicon layer 6 and the Ta 2 O 5 dielectric film 4 .
  • FIG. 2 is a graph of I-V characteristic for illustrating the leak current characteristic of a capacitor when comparing the method according to the present invention by which O 2 -RTA is performed at the temperature of 500° C. under the atmosphere of oxygen with the conventional method in which no process is performed before a Ta 2 O 5 dielectric film is formed.
  • the Ta 2 O 5 dielectric films in the present invention and the conventional method are formed identically. As shown in FIG. 2, the thickness of the effective oxide film Tox is almost same in both cases of the conventional method and the present invention. However, it could be seen that the leak current in the present invention has been greatly improved. In other words, the leak current at LV in the conventional method shows 4.32E ⁇ 5 (A/cm 2 ) while that in the present invention shows 2.58E ⁇ 8 (A/cm 2 ). Also, it could be seen that the leak current in the present invention is greatly improved even in the negative voltage.
  • the present invention forms a good WO 3 film on the surface of the underlying tungsten electrode before forming a Ta 2 O 5 dielectric film in a Ta 2 O 5 capacitor using tungsten as an underlying electrode.
  • the grain boundary of the tungsten film is filled with oxygen atoms, diffusion of oxygen atoms from the Ta 2 O 5 dielectric film can be prevented during a subsequent thermal process.
  • the intrinsic characteristic of the Ta 2 O 5 dielectric film can be intact.
  • a further oxidization of the surface of the underlying tungsten electrode by the WO 3 film could be prevented, thereby improving the characteristic of the leak current of the Ta 2 O 5 capacitor.

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Abstract

The present invention relates to a method of manufacturing a capacitor in a semiconductor device. It is designed to solve the problem due to oxidization of the surface of the underlying tungsten electrode during thermal process performed after depositing Ta2O5 to form a dielectric film in a Ta2O5 capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode. Thus, the present invention includes forming a good thin WO3 film by processing the surface of the underlying tungsten electrode by low oxidization process before forming a Ta2O5 dielectric film and then performing deposition and thermal process of Ta2O5 to form a Ta2O5 dielectric film. As a good WO3 film is formed on the surface of the underlying tungsten electrode before forming a Ta2O5 dielectric film, the grain boundary of the tungsten film is filled with oxygen atoms, thus preventing diffusion of oxygen atoms from the Ta2O5 dielectric film during a subsequent thermal process. Also, as a further oxidization of the surface of the underlying tungsten electrode by the WO3 film could be prevented, thereby improving the characteristic of the leak current of the Ta2O5 capacitor.

Description

    RELATED APPLICATIONS
  • This is a Divisional of U.S. patent application Ser. No. 09/659,508, filed Sep. 11, 2000, now U.S. Pat. No. ______.[0001]
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0002]
  • The invention relates generally to a method of manufacturing a capacitor in a semiconductor device, and more particularly to, a method of manufacturing a capacitor in a semiconductor device which can prevent oxidization of the surface of an underlying electrode to improve the characteristic of the leak current of a Ta[0003] 2O5 capacitor, upon a thermal treatment process performed after Ta2O5 is deposited in order to form a dielectric film, in a Ta2O5 capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode.
  • 2. Description of the Prior Art [0004]
  • Generally, when manufacturing a Ta[0005] 2O5capacitor in a memory device, if metal materials such as Tungsten are used as underlying electrode materials, the work function of the metal materials with poly-silicon is large. Thus, the thickness of the effective oxide film Tox can be reduced and thus the leak current in the thickness of the same effective oxide film can also be reduced. Further, the value of ΔC depending on the bias voltage is small. As a Ta2O5 dielectric film lacks oxygen in the film formed by Ta2O5 deposition process and also contains impurities such as carbon or hydrogen etc., in order to secure the dielectric characteristic of the Ta2O5 capacitor, oxygen must be flowed into it and a subsequent process for removing impurities must be performed after the Ta2O5 deposition is completed.
  • This subsequent process is mainly thermally performed under oxygen atmosphere at a higher temperature, thus securing the dielectric characteristic of a Ta[0006] 2O5 dielectric film. However, if the temperature of the thermal process is too high or the time of the thermal treatment is too long, upon thermal treatment process, the surface of the underlying tungsten electrode is oxidized to form a WO3 film. The WO3 film has the dielectric constant of about 42, which is higher than that of Ta2O5 dielectric film having about 25. However, when creating the WO3 film, there is a possibility that oxygen within the Ta2O5 dielectric film can be diffused into the underlying tungsten electrode. Also, due to the difference of the thermal expansion coefficient with the Ta2O5 dielectric film, there is a problem that the characteristic of the leak current of the Ta2O5 capacitor becomes degraded since a phenomenon of film lifting of the film is generated.
    • SUMMARY OF THE INVENTION
  • It is therefore an object of the present invention to provide a method of manufacturing a capacitor in a semiconductor device which can prevent oxidization of the surface of an underlying electrode to improve the characteristic of the leak current of a Ta[0007] 2O5 capacitor, upon a thermal treatment process performed after Ta2O5 is deposited in order to form a dielectric film, in a Ta2O5 capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode.
  • In order to accomplish the object, a method of manufacturing a capacitor in a semiconductor device according to the present invention is characterized in that it comprises the steps of forming an underlying tungsten electrode on a substrate in which an underlying structure is formed; forming a WO[0008] 3 film on the surface of the underlying tungsten electrode; forming a Ta2O5 dielectric film on the WO3 film; and forming an upper electrode on the Ta2O5 dielectric film.
    •  BRIEF DESCRIPTION OF THE DRAWINGS
  • The aforementioned aspects and other features of the present invention will be explained in the following description, taken in conjunction with the accompanying drawings, wherein: [0009]
  • FIGS. 1A through 1D are sectional views for illustrating a method of manufacturing a capacitor in a semiconductor device according to the present invention; and [0010]
  • FIG. 2 is a graph of I-V characteristic for showing the leak current characteristic of a capacitor depending on a thermal process under a low temperature oxygen atmosphere before a Ta[0011] 2O5 dielectric film is formed.
    • DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
  • The present invention will be described in detail by way of a preferred embodiment with reference to accompanying drawings, in which like reference numerals are used to identify the same or similar parts. [0012]
  • FIGS. 1A through 1D are sectional views for illustrating a method of manufacturing a capacitor in a semiconductor device according to the present invention. [0013]
  • Referring now to FIG. 1A, a first doped poly-[0014] silicon layer 1 is formed on a substrate 10 in which an underlying structure is formed. Then, a barrier metal layer 2 is formed on the first doped poly-silicon layer 1.
  • In the above, the [0015] barrier metal layer 2 is formed of a Ti film and a TiN film. The Ti film is formed by depositing Ti in 100 through 200 Å thickness by means of sputtering method. The TiN film is formed in 100 through 200 Å thickness by means of metal organic chemical vapor deposition (MOCVD) method using Ti(N(CH3)2)4(TDMAT) as raw materials and using He and Ar as carrier gases. At this time, the deposition conditions include 200-300 sccm in the flow rate of raw materials; 100 through 300 sccm in the flow rate of He and Ar, respectively, being carrier gases; 2-10 Torr in the pressure within the reactive furnace and 300-500° C. in the temperature within the reactive furnace. Thereafter, a plasma process is performed for about 20 through 50 seconds with the power of 500 through 1000 W.
  • Referring now to FIG. 1B, a [0016] tungsten film 3 is formed on the barrier metal layer 2 to complete an underlying electrode.
  • In the above, the [0017] tungsten film 3 is formed by chemical vapor deposition (CVD) method under the conditions that WF6is used as raw materials, H2 is used as a reactive gas, the pressure within the reactive furnace is maintained at 80-110 Torr, and the temperature within the reactive furnace is maintained at the temperature of 350-450° C.
  • Referring to FIG. 1C, after removing a native oxide film in which impurities created on the surface of the [0018] tungsten film 3 are contained by means of cleaning process, a WO3 film 100 is forcedly formed on the surface of the tungsten film 3. Then, a Ta2O5 dielectric film 4 is formed on the WO3 film 100.
  • In the above, the cleaning process is performed using 50:1 HF for 30 through 50 seconds. The WO[0019] 3 film 100 is formed in thickness of 10-30 Å by oxidizing the tungsten film 3 by means of Rapid Thermal Anneal (RTA), plasma process or UV/O3 process etc. under a low temperature oxygen atmosphere. The WO3 film 100 formed thus is good in the quality of the film and also fills the grain boundary of the tungsten film 3 with oxygen atoms. The rapid thermal process is performed under the atmospheres of O2 or N2O at the temperature of 450-550° C. for 5-20 seconds. The plasma process is performed under the atmospheres of O2 or N2O at the temperature of 300-550° C. for 30-120 seconds by the power of 200-500 W. The UV/O3 process is performed at the temperature of 300-550° C. for 2-5 minutes at the strength of 15-30 mW/cm2.
  • The Ta[0020] 2O5 dielectric film 4 is deposited with use Ta2O5 under the conditions that Ta(C2H5O)5 is used as raw materials, N2 gas and O2 gas is used as a carrier gas and an oxidizer, respectively, the flow rate of the N2gas is maintained at 350-450 sccm, the flow rate of the O2 gas is maintained at 20-50 sccm, the pressure within the reactive furnace is maintained at 0.1-0.6 Torr, and the temperature within the reactive furnace is maintained at 350-450° C. Then, in order to prevent oxidization of the tungsten film 3 being an underlying electrode while obtaining a dielectric characteristic, the Ta2O5 dielectric film 4 is experienced by a rapid thermal process by mixing inactive gases such as N2, Ar, He etc. in N2O gas or O2 gas at the temperature of 550-700° C. for 20-60 seconds, or by a plasma annealing process under oxygen atmosphere using O2 gas or N2O gas by which a plasma power of 10-100 W is applied at the temperature of less 350° C.
  • Referring to FIG. 1D, a [0021] TiN film 5 and a second doped poly-silicon layer 6 are sequentially formed on the Ta2O5 dielectric film 4, thus completing an upper electrode of a capacitor. By means of a series of these processes, a Ta2O5 capacitor of a MIM structure is manufactured.
  • In the above, the TiN [0022] film 5 is formed in thickness of 200-500 Å by means of chemical vapor deposition (CVD) method under the conditions that TiCl4 is used as raw materials, NH3 gas is used as a reactive gas, the temperature within the reactive furnace is maintained at 300-500° C. and the pressure within the reactive furnace is maintained at 0.1-2 Torr. The second poly-silicon layer 6 is formed in thickness of 800-1200 Å. The TiN film 5 functions to reduce the work function with the second poly-silicon layer 6 and the Ta2O5 dielectric film 4.
  • FIG. 2 is a graph of I-V characteristic for illustrating the leak current characteristic of a capacitor when comparing the method according to the present invention by which O[0023] 2-RTA is performed at the temperature of 500° C. under the atmosphere of oxygen with the conventional method in which no process is performed before a Ta2O5 dielectric film is formed.
  • In order to compare the leak current characteristic, the Ta[0024] 2O5 dielectric films in the present invention and the conventional method are formed identically. As shown in FIG. 2, the thickness of the effective oxide film Tox is almost same in both cases of the conventional method and the present invention. However, it could be seen that the leak current in the present invention has been greatly improved. In other words, the leak current at LV in the conventional method shows 4.32E−5 (A/cm2) while that in the present invention shows 2.58E−8 (A/cm2). Also, it could be seen that the leak current in the present invention is greatly improved even in the negative voltage.
  • As can be understood from the above description with the present invention, the present invention forms a good WO[0025] 3 film on the surface of the underlying tungsten electrode before forming a Ta2O5 dielectric film in a Ta2O5 capacitor using tungsten as an underlying electrode. As the grain boundary of the tungsten film is filled with oxygen atoms, diffusion of oxygen atoms from the Ta2O5 dielectric film can be prevented during a subsequent thermal process. Thus, the intrinsic characteristic of the Ta2O5 dielectric film can be intact. Also, a further oxidization of the surface of the underlying tungsten electrode by the WO3 film could be prevented, thereby improving the characteristic of the leak current of the Ta2O5 capacitor.
  • The present invention has been described with reference to a particular embodiment in connection with a particular application. Those having ordinary skill in the art and access to the teachings of the present invention will recognize additional modifications and applications within the scope thereof. [0026]
  • It is therefore intended by the appended claims to cover any and all such applications, modifications, and embodiments within the scope of the present invention. [0027]

Claims (2)

What is claimed is:
1. A semiconductor device having a capacitor comprising:
a substrate containing an underlying structure;
a tungsten electrode formed on the substrate;
a WO3 film formed on the surface of the tungsten;
a dielectric film formed on the WO3 film; and
a upper electrode formed on the dielectric film,
wherein, the WO3 film prevents the diffusion of oxygen atoms from the dielectric film into the tungsten film.
2. A capacitor comprising:
a tungsten electrode supported by a substrate;
a WO3 film formed on the surface of the tungsten;
a dielectric film formed on the WO3 film; and
a upper electrode formed on the dielectric film,
wherein, the WO3 film prevents the diffusion of oxygen atoms from the dielectric film into the tungsten film.
US09/942,645 1999-09-14 2001-08-31 Method of manufacturing a capacitor in a semiconductor device Abandoned US20020025649A1 (en)

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