US20020014671A1 - MOS technology power device - Google Patents

MOS technology power device Download PDF

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US20020014671A1
US20020014671A1 US09/860,809 US86080901A US2002014671A1 US 20020014671 A1 US20020014671 A1 US 20020014671A1 US 86080901 A US86080901 A US 86080901A US 2002014671 A1 US2002014671 A1 US 2002014671A1
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conductivity type
power device
layer
semiconductor
regions
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Mario Saggio
Ferruccio Frisina
Angelo Magri'
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STMicroelectronics SRL
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures

Definitions

  • the present invention relates to a MOS technology power device, particularly to a MD (Multi Drain) power device.
  • the switching time of the device must be reduced in order to reduce the energy dissipated during the switching state.
  • the reduction of the intrinsic resistance of the gate of the device assumes a fundamental importance in a MOS technology power device; in fact this allows to reduce the delay of the power device in off state between the turn off imposed by the drive circuit and the effective turn off of the power device.
  • the reduction of the intrinsic resistance of a MOS power device is made, considering the plant view of the device, by introducing some frames called gate fingers which come into the active area zone of the device and allow the direct contact between the gate metal and the material (for example polysilicon) utilized for transmitting the gate signal of the elementary active units of the device (the MOS units of the power device). In this way the distance between the gate metal and each elementary unit to be switched is reduced so that a suitable reduction of the intrinsic resistance of the device is allowed.
  • some frames called gate fingers which come into the active area zone of the device and allow the direct contact between the gate metal and the material (for example polysilicon) utilized for transmitting the gate signal of the elementary active units of the device (the MOS units of the power device).
  • the distance between the gate metal and each elementary unit to be switched is reduced so that a suitable reduction of the intrinsic resistance of the device is allowed.
  • a traditional technology for introducing gate fingers into the traditional MOS power device occurs with a frame wherein the zone, in active area, where the contact between the gate metal and the polysilicon is performed, is protected by a deep body well, a P + well in the case of a n-channel MOS power device, which prevents the field lines from crowding in the thin oxide thereby avoiding a premature breakdown of the device.
  • the contact between the gate metal and the polysilicon can occur both in proximity of the thin oxide and in proximity of the thick oxide.
  • MD MOS power device wherein, in order to reduce the drain resistivity, columnar extensions of the body wells are introduced by an implant sequence among successive epitaxial growths so as to form the selective drain doping which equilibrates the epitaxially achieved drain charge.
  • MD MOS power devices are known from the European patent applications No. 98830737.7 and No. 98830739.3 dated Sep. 12, 1998 of the same Applicant.
  • a MOS technology power device comprising a plurality of elementary active units and a part of said power device which is placed between zones where said elementary active units are formed, characterized in that said part of the power device comprises at least two heavily doped body regions of a first conductivity type which are formed in a semiconductor layer of a second conductivity type, a first lightly doped semiconductor region of the first conductivity type which is placed laterally between said two body regions, said first semiconductor region being placed under a succession of a thick silicon oxide layer, a polysilicon layer and a metal layer, and a plurality of second lightly doped semiconductor regions of the first conductivity type being placed under said at least two heavily doped body regions and under said first lightly doped semiconductor region of the first conductivity type, each region of said plurality of second lightly doped semiconductor regions of the first conductivity type being separated from the other by portions of said semiconductor layer of the second conductivity type.
  • the present invention it is possible to form a MOS technology power device, particularly a MD device, wherein the contact between the gate metal and the polysilicon is obtained by means of gate fingers without producing premature breakdown of the device.
  • FIG. 1 is a schematic layout of a part of a power device according to present invention
  • FIG. 2 is a cross-sectional view of the part of the power device of FIG. 1 along a line II-II;
  • FIG. 3 is a cross-sectional view of the part of the power device of FIG. 1 along a line III-III;
  • FIG. 4 is a cross-sectional view of the part of the power device of FIG. 1 along a line IV-IV;
  • FIG. 5 is a cross-sectional view of the part of the power device of FIG. 1 along a line V-V.
  • a part 1 of a n-channel MOS power device according to present invention is shown without a final passivation layer. Said part 1 is interposed between device zones where the elementary active units (the MOS active units) of the power device are performed, in fact considering the layout of FIG. 1 such zones (not shown in figure) are both under and above the part 1 .
  • the power device zones, where the elementary active units are performed are known by the European patent applications No. 98830737.7 and No. 98830739.3 dated Sep. 12,1998 of the same Applicant.
  • the part 1 of the MOS power device according to invention is a device zone dedicated to the contact between the material (polysilicon) performing the gate structures of the elementary active units of the power device and a metal layer.
  • the part 1 of the power device according to invention comprises a N + type semiconductor substrate 2 on which a N type semiconductor layer 3 is formed which is constituted by a succession of the N type layers 31 - 35 which are formed by different epitaxial growths.
  • the layer 3 forms a common drain layer for the elementary active units of the MOS technology power device.
  • P type conductivity body regions 4 are formed; such body regions 4 are elongated stripes of P + type heavily doped semiconductor which extend horizontally with respect to FIG. 1, while FIGS. 3 - 5 are sectional views along a direction transversal to said P + type semiconductor stripes. Between such two body stripes 4 a P ⁇ type lightly doped semiconductor region 5 is provided which extends for the whole length of the body stripes 4 . Under the body regions 4 , inside the layer 3 , a plurality of P ⁇ type lightly doped semiconductor regions 6 is provided which have a column shape and which are separated by portions of the same layer 3 , as more shown in FIG. 2 . As shown in FIGS.
  • each region 6 is placed both under the two body regions 4 and under the region 5 , as can be seen in FIG. 3. Each region 6 has a higher resistivity value than the resistivity value of the layer 3 .
  • Each region 6 is formed by a succession of P ⁇ type wells 61 - 64 which have been formed by means of successive P type dopant implants in the layers 31 - 34 so that they are alternated with the epitaxial growths of the layers 31 - 35 .
  • the thermal process forming the MOS device allows the vertical diffusion of each of the wells 61 - 64 into the corresponding top epitaxial layer of the layers 32 - 35 ; this causes the single wells 61 - 64 to merge for forming P ⁇ type columns 6 which extend substantially up to the substrate 2 .
  • a thick silicon oxide layer 9 called field oxide, on which there is a polysilicon layer 10 , is provided above the region 5 .
  • the polysilicon layer 10 is the same layer which is placed on the thin oxide layers in the elementary active units of the device for forming the gate structures of the such units.
  • a dielectric layer 11 is provided on the polysilicon layer 10 , wherein a substantially central opening 12 is provided to contact the polysilicon layer 10 .
  • the opening 12 extends horizontally, looking at FIG. 1, in parallel with the stripes 4 and 5 , but it extend up to a certain point and it has a smaller width than the thick silicon oxide layer.
  • Such opening 12 is covered by a metal layer 13 which serves to contact the polysilicon layer 10 which, as aforesaid, represents the polysilicon layer of the gate structures of the elementary active units of the power device.
  • a metallic layer 200 is provided on the bottom surface of the substrate 2 .
  • the layer 5 prevents forming of superficial N type layers in the zone below the layers 9 , 10 , 13 , which could produce canalization phenomenons. Also the presence of the layer 5 , which has a dopant concentration equal to that of the region 6 , allows to extend to the zone below the layers 9 , 10 , 13 the capacity to hold voltage even with a high dopant concentration of the layer 3 .
  • the drain layer is formed by a number n of N type layers with equal or different dopant concentrations.
  • the drain layer instead of a plurality of regions 6 each one formed by a column of four P type semiconductor wells, there will be a plurality of regions 6 each one formed by a column with a number n ⁇ 1 of P type semiconductor wells.
  • each of the body regions 4 is merged with the body regions of each of the elementary active units.

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Abstract

A MOS technology power device is described which comprises a plurality of elementary active units and a part (1) of said power device which is placed between zones where the elementary active units are formed. The part (1) of the power device comprises at least two heavily doped body regions (4) of a first conductivity type which are formed in a semiconductor layer (3) of a second conductivity type, a first lightly doped semiconductor region (5) of the first conductivity type which is placed laterally between the two body regions (4). The first semiconductor region (5) is placed under a succession of a thick silicon oxide layer (9), a polysilicon layer (10) and a metal layer (13). A plurality of second lightly doped semiconductor regions (6) of the first conductivity type are placed under said at least two heavily doped body regions (4) and under said first lightly doped semiconductor region (5) of the first conductivity type, each region (6) of said plurality of second lightly doped semiconductor regions (6) of the first conductivity type being separated from the other by portions of said semiconductor layer (3) of the second conductivity type.

Description

  • The present invention relates to a MOS technology power device, particularly to a MD (Multi Drain) power device. [0001]
  • In the design of a power device utilized as a switch switching between on state and off state, the losses in the on state and in the off state must be considered. [0002]
  • The switching time of the device must be reduced in order to reduce the energy dissipated during the switching state. Particularly, the reduction of the intrinsic resistance of the gate of the device assumes a fundamental importance in a MOS technology power device; in fact this allows to reduce the delay of the power device in off state between the turn off imposed by the drive circuit and the effective turn off of the power device. [0003]
  • The reduction of the intrinsic resistance of a MOS power device is made, considering the plant view of the device, by introducing some frames called gate fingers which come into the active area zone of the device and allow the direct contact between the gate metal and the material (for example polysilicon) utilized for transmitting the gate signal of the elementary active units of the device (the MOS units of the power device). In this way the distance between the gate metal and each elementary unit to be switched is reduced so that a suitable reduction of the intrinsic resistance of the device is allowed. [0004]
  • A traditional technology for introducing gate fingers into the traditional MOS power device occurs with a frame wherein the zone, in active area, where the contact between the gate metal and the polysilicon is performed, is protected by a deep body well, a P[0005] + well in the case of a n-channel MOS power device, which prevents the field lines from crowding in the thin oxide thereby avoiding a premature breakdown of the device. The contact between the gate metal and the polysilicon can occur both in proximity of the thin oxide and in proximity of the thick oxide.
  • However the structures of the above described type cannot be utilized in the case of MD (Multi Drain) MOS power device, wherein, in order to reduce the drain resistivity, columnar extensions of the body wells are introduced by an implant sequence among successive epitaxial growths so as to form the selective drain doping which equilibrates the epitaxially achieved drain charge. Such MD MOS power devices are known from the European patent applications No. 98830737.7 and No. 98830739.3 dated Sep. 12, 1998 of the same Applicant. [0006]
  • In view of the state of the art described, it is an object of the present invention to disclose a MOS technology power device which solves the aforementioned problem. [0007]
  • According to the present invention, such an object is attained by a MOS technology power device comprising a plurality of elementary active units and a part of said power device which is placed between zones where said elementary active units are formed, characterized in that said part of the power device comprises at least two heavily doped body regions of a first conductivity type which are formed in a semiconductor layer of a second conductivity type, a first lightly doped semiconductor region of the first conductivity type which is placed laterally between said two body regions, said first semiconductor region being placed under a succession of a thick silicon oxide layer, a polysilicon layer and a metal layer, and a plurality of second lightly doped semiconductor regions of the first conductivity type being placed under said at least two heavily doped body regions and under said first lightly doped semiconductor region of the first conductivity type, each region of said plurality of second lightly doped semiconductor regions of the first conductivity type being separated from the other by portions of said semiconductor layer of the second conductivity type. [0008]
  • Thanks to the present invention it is possible to form a MOS technology power device, particularly a MD device, wherein the contact between the gate metal and the polysilicon is obtained by means of gate fingers without producing premature breakdown of the device.[0009]
  • The features and the advantages of the present invention will be made evident by the following detailed description of an embodiment, thereof which is illustrated as not limiting example in the annexed drawings, wherein: [0010]
  • FIG. 1 is a schematic layout of a part of a power device according to present invention; [0011]
  • FIG. 2 is a cross-sectional view of the part of the power device of FIG. 1 along a line II-II; [0012]
  • FIG. 3 is a cross-sectional view of the part of the power device of FIG. 1 along a line III-III; [0013]
  • FIG. 4 is a cross-sectional view of the part of the power device of FIG. 1 along a line IV-IV; [0014]
  • FIG. 5 is a cross-sectional view of the part of the power device of FIG. 1 along a line V-V.[0015]
  • Referring to FIGS. [0016] 1-5 a part 1 of a n-channel MOS power device according to present invention is shown without a final passivation layer. Said part 1 is interposed between device zones where the elementary active units (the MOS active units) of the power device are performed, in fact considering the layout of FIG. 1 such zones (not shown in figure) are both under and above the part 1. The power device zones, where the elementary active units are performed, are known by the European patent applications No. 98830737.7 and No. 98830739.3 dated Sep. 12,1998 of the same Applicant. The part 1 of the MOS power device according to invention is a device zone dedicated to the contact between the material (polysilicon) performing the gate structures of the elementary active units of the power device and a metal layer.
  • Referring to FIGS. [0017] 2-5, the part 1 of the power device according to invention comprises a N+ type semiconductor substrate 2 on which a N type semiconductor layer 3 is formed which is constituted by a succession of the N type layers 31-35 which are formed by different epitaxial growths. The layer 3 forms a common drain layer for the elementary active units of the MOS technology power device.
  • In the [0018] layer 3, more specifically in the layer 35, P type conductivity body regions 4 are formed; such body regions 4 are elongated stripes of P+ type heavily doped semiconductor which extend horizontally with respect to FIG. 1, while FIGS. 3-5 are sectional views along a direction transversal to said P+ type semiconductor stripes. Between such two body stripes 4 a P− type lightly doped semiconductor region 5 is provided which extends for the whole length of the body stripes 4. Under the body regions 4, inside the layer 3, a plurality of P− type lightly doped semiconductor regions 6 is provided which have a column shape and which are separated by portions of the same layer 3, as more shown in FIG. 2. As shown in FIGS. 1-3, such regions 6 are provided only in particular zones of the part 1 of the power device which are vertically delimited by areas 7 where the contact among the body regions 4 and a metal layer 8 occurs; this metal layer 8 is the metallic layer to contact the source regions not shown in the Figures. Also, since the part 1 of the power device is not an elementary active unit, each region 6 is placed both under the two body regions 4 and under the region 5, as can be seen in FIG. 3. Each region 6 has a higher resistivity value than the resistivity value of the layer 3.
  • Each [0019] region 6 is formed by a succession of P− type wells 61-64 which have been formed by means of successive P type dopant implants in the layers 31-34 so that they are alternated with the epitaxial growths of the layers 31-35. In this way, in fact, the thermal process forming the MOS device allows the vertical diffusion of each of the wells 61-64 into the corresponding top epitaxial layer of the layers 32-35; this causes the single wells 61-64 to merge for forming P− type columns 6 which extend substantially up to the substrate 2.
  • A thick [0020] silicon oxide layer 9, called field oxide, on which there is a polysilicon layer 10, is provided above the region 5. The polysilicon layer 10 is the same layer which is placed on the thin oxide layers in the elementary active units of the device for forming the gate structures of the such units. A dielectric layer 11 is provided on the polysilicon layer 10, wherein a substantially central opening 12 is provided to contact the polysilicon layer 10. The opening 12 extends horizontally, looking at FIG. 1, in parallel with the stripes 4 and 5, but it extend up to a certain point and it has a smaller width than the thick silicon oxide layer. Such opening 12 is covered by a metal layer 13 which serves to contact the polysilicon layer 10 which, as aforesaid, represents the polysilicon layer of the gate structures of the elementary active units of the power device. A metallic layer 200 is provided on the bottom surface of the substrate 2.
  • The [0021] layer 5 prevents forming of superficial N type layers in the zone below the layers 9, 10, 13, which could produce canalization phenomenons. Also the presence of the layer 5, which has a dopant concentration equal to that of the region 6, allows to extend to the zone below the layers 9, 10, 13 the capacity to hold voltage even with a high dopant concentration of the layer 3.
  • Although in the Figures a power device in MOS technology which has a drain layer formed only by five N type layers [0022] 31-35 has been disclosed by way of example, it is possible that the drain layer is formed by a number n of N type layers with equal or different dopant concentrations. In this case, instead of a plurality of regions 6 each one formed by a column of four P type semiconductor wells, there will be a plurality of regions 6 each one formed by a column with a number n−1 of P type semiconductor wells.
  • Also, although a n-channel MOS power device has been described, the same invention can be applied to a p-channel MOS power device. [0023]
  • Preferably each of the [0024] body regions 4 is merged with the body regions of each of the elementary active units.

Claims (10)

1. MOS technology power device comprising a plurality of elementary active units and a part (1) of said power device which is placed between zones where said elementary active units are formed, characterized in that said part (1) of the power device comprises at least two heavily doped body regions (4) of a first conductivity type which are formed in a semiconductor layer (3) of a second conductivity type, a first lightly doped semiconductor region (5) of the first conductivity type which is placed laterally between said two body regions (4), said first semiconductor region (5) being placed under a succession of a thick silicon oxide layer (9), a polysilicon layer (10) and a metal layer (13), and a plurality of second lightly doped semiconductor regions (6) of the first conductivity type being placed under said at least two heavily doped body regions (4) and under said first lightly doped semiconductor region (5) of the first conductivity type, each region (6) of said plurality of second lightly doped semiconductor regions (6) of the first conductivity type being separated from the other by portions of said semiconductor layer (3) of the second conductivity type.
2. Device according to claim 1, characterized in that said metal layer (13) has a smaller width and a smaller length than said thick silicon oxide layer (9).
3. Device according to claim 1, characterized in that said semiconductor layer (3) of the second conductivity type is formed by a number of superimposed semiconductor layers (31-35) and said plurality of second lightly doped semiconductor regions (6) of the first conductivity type are a plurality of columns (6) of lightly doped semiconductor regions (61-64) of the first conductivity type, said columns (6) of semiconductor regions (61-64) of the first conductivity type being extended substantially to a heavily doped semiconductor substrate (2) of the second conductivity type which is placed under said semiconductor layer (3) of the second conductivity type.
4. Device according to claim 1, characterized in that said at least two heavily doped body regions (4) of the first conductivity type and said first lightly doped semiconductor region (5) of the first conductivity type are semiconductor stripes.
5. Device according to claim 1, characterized in that said polysilicon layer (10) is the same polysilicon layer forming the gates structures of said elementary active units of said MOS technology power device.
6. Device according to claim 1, characterized in that said first conductivity type is of N type and said second conductivity type is of P type.
7. Device according to claim 1, characterized in that said first conductivity type is of P type and said second conductivity type is of N type.
8. Device according to claim 1, characterized in that said MOS technology power device is a MD power device.
9. Device according to claim 1, characterized in that said semiconductor layer (3) of the second conductivity type is superimposed to a heavily doped semiconductor substrate (2) of the second conductivity type.
10. Device according to claim 1, characterized in that each one of said at least two body regions (4) is merged with body regions of each one of said elementary active units.
US09/860,809 2000-05-19 2001-05-17 MOS technology power device Expired - Lifetime US6404010B2 (en)

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