US20010036043A1 - Magnetic thin film head, the fabrication method, and magnetic disk - Google Patents

Magnetic thin film head, the fabrication method, and magnetic disk Download PDF

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Publication number
US20010036043A1
US20010036043A1 US09/784,141 US78414101A US2001036043A1 US 20010036043 A1 US20010036043 A1 US 20010036043A1 US 78414101 A US78414101 A US 78414101A US 2001036043 A1 US2001036043 A1 US 2001036043A1
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Prior art keywords
film
head element
magnetic
thin film
electroplating
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US09/784,141
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English (en)
Inventor
Gen Oikawa
Shuichi Kojima
Harunobu Saito
Noriyuki Saiki
Masayasu Kagawa
Akira Kondo
Kenji Ishikake
Hiromi Shiina
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HGST Japan Ltd
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Assigned to HITACHI, LTD. reassignment HITACHI, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SAITO, HARUNOBU, ISHIKAKE, KENJI, KOJIMA, SHUICHI, KONDO, AKIRA, MASAYASU, KAGAWA, OIKAWA, GEN, SAIKI, NORIYUKI, SHIINA, HIROMI
Assigned to HITACHI GLOBAL STORAGE TECHNOLOGIES JAPAN, LTD. reassignment HITACHI GLOBAL STORAGE TECHNOLOGIES JAPAN, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HITACHI, LTD.
Priority to US11/095,533 priority Critical patent/US7274541B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/3113—Details for improving the magnetic domain structure or avoiding the formation or displacement of undesirable magnetic domains
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y10T29/49044—Plural magnetic deposition layers

Definitions

  • the present invention relates to a plating film fabrication method, and more particularly to a magnetic thin film head fabrication method. Still more particularly, the invention relates to a magnetic thin film head fabrication method using an electroplating technique in which the composition of an initially formed layer in an upper shield of a magnetic thin film head is precisely controlled. Furthermore, the invention pertains to a magnetic thin film head manufactured by the magnetic thin film head fabrication method, and to a magnetic disk apparatus comprising the magnetic thin film head thus manufactured.
  • the invention is also applicable as a plating film fabrication method other than the magnetic thin film head fabrication method mentioned above, and it is possible to manufacture electronic circuit substrates using the plating film fabrication method according to the invention.
  • noise-after-write signifies a phenomenon in which noise is produced on a read output at the time of reading data recorded on a magnetic disk.
  • evaluation of noise-after-write can be performed in the following manner: A write current having a predetermined frequency is applied for a period of several tens of microseconds, and then after the write current is turned off, noise outputs exceeding a predetermined slice level are counted through a read head output terminal for a period of several tens of microseconds.
  • noise-after-write exemplified in FIG. 2
  • a write-read operation was repeated 10,000 times per magnetic thin film head slider, and a magnetic thin film head was judged to be defective if the number of noise outputs was larger than a predetermined value.
  • output fluctuation signifies a phenomenon in which a read output amplitude decreases or increases at the time of reading data recorded on a magnetic disk. Since this phenomenon is accelerated by addition of a write operation, output fluctuation dVpp is expressed as shown in FIG. 3:
  • FIG. 4 shows relationships among shield film thickness, noise-after-write, and output fluctuation.
  • the noise-after-write is minimized at a level of 4.5 ⁇ m in shield film thickness
  • the output fluctuation is minimized at a level of 3.0 ⁇ m in shield film thickness.
  • FIG. 5 there are shown relationships among magnetostriction constant ⁇ , noise-after-write, and output fluctuation.
  • NiFe permalloy used as a shield material has a magnetostriction constant which shifts to the range of +1.0 to +2.0 ⁇ 10 ⁇ 7 in heat treatment taken as a post-process step.
  • an initially formed layer of an upper shield film is liable to be Fe-rich, i.e., it has been found that Ni is 78.9 wt % and ⁇ is +4.8 ⁇ 10 ⁇ 7 in an initially formed layer of 0.2 ⁇ m in thickness in a case where Ni is 81.1 wt % and ⁇ is ⁇ 3.5 ⁇ 10 ⁇ 7 in an upper shield film of 3.5 ⁇ m in thickness.
  • a permalloy film having a magnetostriction constant ⁇ of ⁇ 2.0 to ⁇ 4.0 ⁇ 10 ⁇ 7 and an Ni content of 80.8 to 81.2 wt % after plating could be provided for reducing the noise-after-write and output fluctuation.
  • the upper shield film tends to be Fe-rich in an initially formed plating layer, this film formation is unsatisfactory for substantially reducing the noise-after-write and output fluctuation in a magnetic disk apparatus scheme for higher-density higher-frequency recording.
  • Another object of the present invention is to provide a high-performance magnetic disk apparatus comprising the above-stated magnetic thin film head.
  • a magnetic thin film head which is fabricated in the following manner:
  • an upper shield film is formed by electroplating with NiFe permalloy material so that the composition of an initially formed layer thereof is equivalent to that of an upper layer or Ni-rich in comparison therewith or so that the magnetostriction constant of the initially formed layer is equivalent to or smaller than that of the upper layer.
  • a current value of electroplating is regulated in the same plating bath.
  • a magnetic thin film head comprising: a write head element; and a read head element; wherein a ferromagnetic film having a soft magnetic characteristic and a magnetic shield function is formed of NiFe permalloy material by electroplating in the vicinity of a sensor film arranged as the read head element, wherein Ni in composition of an initially formed layer having a thickness of 1.0 ⁇ m is 80.8 to 82.0 wt %, and wherein Ni in composition of an upper layer on the initially formed layer 1.0 ⁇ m thick is 81.0 to 81.2 wt %.
  • a magnetic thin film head comprising: a write head element; and a read head element; wherein a ferromagnetic film having a soft magnetic characteristic and a magnetic shield function is formed of NiFe permalloy material by electroplating in the vicinity of a sensor film arranged as the read head element, wherein a magnetostriction constant ⁇ representing a magnetic characteristic of the ferromagnetic film is ⁇ 2.0 to ⁇ 7.0 ⁇ 10 ⁇ 7 in an initially formed layer having a thickness of 1.0 ⁇ m, and wherein the magnetostriction constant ⁇ is ⁇ 3.0 to ⁇ 4.0 ⁇ 10 ⁇ 7 in an upper layer on the initially formed layer 1.0 ⁇ m thick.
  • a magnetic thin film head comprising: a write head element; and a read head element; wherein a ferromagnetic film having a soft magnetic characteristic and a magnetic shield function is formed of NiFe permalloy material by electroplating in the vicinity of a sensor film arranged as the read head element, wherein a film thickness exceeding 1.0 ⁇ m in the ferromagnetic film formed of NiFe permalloy material has an Ni content accuracy of ⁇ 0.1 wt %, and wherein a film thickness of 1.0 ⁇ m or less in the ferromagnetic film formed of NiFe permalloy material has an Ni content accuracy of ⁇ 0.3 wt %.
  • a method of fabricating a magnetic thin film head as in any of the above-mentioned first to third aspects of the present invention, comprising the step of: timewise regulating a current density of permalloy electroplating under control of a personal computer; wherein a plurality of time periods and a plurality of current values are preset for film formation.
  • a magnetic disk apparatus comprising a magnetic thin film head as in any of the above-mentioned first to third aspects of the present invention.
  • FIG. 1 is a diagram showing a region of Ni in film composition and a region of magnetostriction constant ⁇ with respect to film thickness according to the present invention
  • FIG. 2 shows diagrams indicating noise-after-write
  • FIG. 3 is a diagram showing output fluctuation
  • FIG. 4 shows diagrams indicating noise-after-write and output fluctuation with respect to film thickness
  • FIG. 5 shows diagrams indicating noise-after-write and output fluctuation with respect to magnetostriction constant ⁇
  • FIG. 6 is a diagram showing a relationship between Ni in film composition and magnetostriction constant ⁇ ;
  • FIG. 7 is a diagram showing a relationship between plating current density and Ni in film composition
  • FIG. 8 shows diagrams indicating Ni in film composition and magnetostriction constant ⁇ with respect to film thickness in comparison between products according to the present invention and conventional products;
  • FIG. 9 is a diagram showing a cumulative frequency of occurrences of noise-after-write in comparison between products according to the present invention and conventional products;
  • FIG. 10 is a diagram showing a cumulative frequency of output fluctuation in comparison between products according to the present invention and conventional products
  • FIG. 11 is a diagram showing a plating current sequence according to the present invention.
  • FIG. 12 is a diagram illustrating an upper write pole formed by electroplating
  • FIG. 13 is a sectional view showing the tip end of a magnetic thin film head.
  • FIG. 14 is a schematic diagram showing a magnetic disk apparatus comprising a magnetic thin film head according to the present invention.
  • a bath temperature of 30° C. and a pH value of 3.6 were provided.
  • an Fe +2 metal ion concentration was 0.5 to 1.5 g/l
  • an Ni +2 metal ion concentration was 10 to 30 g/l.
  • Sodium benzosulfimide, boric acid, and sodium chloride had concentrations of 1.0 to 2.0 g/l, 20 to 30 g/l, and 20 to 30 g/l, respectively.
  • plating power supply a constant-current source was used, and for setting time periods and current values of plating, a personal computer was employed. Thus, it was allowed to set up an arbitrary impressed current sequence in increments of one second and one mA.
  • Equation (1) For film composition measurement, a fluorescent X-ray analyzer was used, and for magnetostriction constant measurement, a thin film B-H tracer was used. With respect to variation in an anisotropic magnetic field Hk of a film at the time of stress application, calculation was performed using the following Equation (1):
  • Hk Hk 0 ⁇ 3 ⁇ (1+ ⁇ )/ Is ( A/m ) (1)
  • Hk0 is an anisotropic magnetic field of each film under no stress (A/m)
  • ⁇ is a magnetostriction constant
  • ⁇ is a Poisson ratio of each film (taken as 0.32)
  • ⁇ is a stress (Pa)
  • Is is a saturation flux density (taken as 1T).
  • the direction of an applied magnetic field was matched with that of a stress, and a three-point bending method was used for stress application. While varying the stress ⁇ , the anisotropic magnetic field Hk was measured. Based on a rate of change in the anisotropic magnetic field Hk, the magnetostriction constant ⁇ was determined.
  • a plating current value per unit area represents a plating current density (or referred to simply as a current density), and according to the current density, a plating film having such a film composition (Ni content) as shown in FIG. 7 is formed in a plating bath under the above-mentioned conditions.
  • the magnetostriction constant ⁇ representing a magnetic characteristic of the plating film can be attained as shown in FIG. 6. Note that since each film indicated in FIGS. 6 and 7 was formed to have a thickness of 3.5 ⁇ m by applying a constant current for initial and upper layers, the values in these figures include variations in the film composition and magnetostriction constant ⁇ of the initial layer.
  • the thickness of a plating film depends on the amount of electrolysis, it is proportional to a plating time with respect to a constant current.
  • a plating film having a magnetostriction constant ⁇ of ⁇ 3.5 ⁇ 10 ⁇ 7 and a thickness of 3.5 ⁇ m is formed as an upper shield film, an Ni content of 81.1 wt % and a current density i of 4 mA/cm 2 are provided as shown in FIGS. 6 and 7. Further, since the area to be plated is 112.5 cm 2 according to the configuration of the substrate, a current value I of 450 mA is provided.
  • FIG. 8 presents the results of measurements of film compositions and magnetostriction constants ⁇ using substrates plated in respective film thicknesses.
  • FIG. 11 shows this current sequence for plating.
  • a film composition shown in FIG. 8 More specifically, in an example where Ni was 81.1 wt % and ⁇ was ⁇ 3.5 ⁇ 10 ⁇ 7 in a film of 3.5 ⁇ m in thickness, Ni was 80.9 wt % and ⁇ was ⁇ 3.3 ⁇ 10 ⁇ 7 in an initial layer of 0.2 ⁇ m in thickness, i.e., it was enabled to form a film having a film composition difference ⁇ Ni of 0.2 wt % and a magnetostriction constant shift ⁇ of 1.2 ⁇ 10 ⁇ 7 .
  • the film composition and magnetostriction constant of the initial layer could be equivalent to those of the upper layer in the embodiment of the present invention.
  • Ni-rich film composition As shown in FIG. 8, Ni was 81.1 wt % and ⁇ was ⁇ 3.5 ⁇ 10 ⁇ 7 in a film of 3.5 ⁇ m in thickness, Ni was 82.0 wt % and ⁇ was ⁇ 7.0 ⁇ 10 ⁇ 7 in an initial layer of 0.2 ⁇ m in thickness, i.e., it was enabled to form a film having a film composition difference ⁇ Ni of ⁇ 0.9 wt % and a magnetostriction constant shift ⁇ of ⁇ 3.5 ⁇ 10 ⁇ 7 .
  • the inventors formed a film A comprising an initial layer and an upper layer in which a film composition difference and a magnetostriction constant shift were reduced to provide equivalent film composition, an Ni-rich film B, and an Fe-rich film C as an upper shield in fabrication of a magnetic thin film head. Then, each of these films A, B and C was subjected to evaluation in terms of noise-after-write and output fluctuation.
  • FIGS. 9 and 10 show the results of this evaluation.
  • the WN was reduced by approximately 20% and the dVpp was reduced by approximately 40% in the film A
  • the WN was reduced by approximately 21% and the dVpp was reduced by approximately 39% in the film B
  • the WN was reduced by approximately 18% and the dVpp was reduced by approximately 38% in the film C.
  • the films A, B and C having an equivalent level of magnetic head electrical characteristic, could provide advantageous effects that noise-after-write was reduced by approximately 20% and output fluctuation was reduced by approximately 40% in comparison with conventional products.
  • TABLE 1 shows the judgment results of magnetic thin film head evaluation on the conventional products and the films A, B and C according to the present invention.
  • TABLE 1 Total Film Initial Layer Shield ⁇ ⁇ Ni ⁇ ⁇ Ni Judgment Result No Species thickness 10 ⁇ 7 wt % 10 ⁇ 7 wt % NAW*** OF**** Conv.*1 2.7 ⁇ m thick 2.7 ⁇ m ⁇ 4 81.2 4.3 78.8 X X Conc.2 3.5 ⁇ m thick 3.5 ⁇ m ⁇ 3.5 81.1 4.8 78.9 ⁇ ⁇ Inv.**A Same Comp.
  • the inventors conducted prototype examinations using the method of varying current values stepwise. Thus, it was allowed to form a film having a film composition and magnetostriction constant such as shown in FIGS. 1 and 2 with respect to the direction of film thickness. Using the film thus formed as an upper shield, a magnetic thin film head was fabricated so as to significantly reduce noise-after-write and output fluctuation.
  • FIGS. 4 and 5 show the results of the examinations made by the inventors.
  • noise-after-write and output fluctuation were minimized and a degree of film thickness dependency was reduced.
  • magnetostriction constant in the range of ⁇ 3.5 ⁇ 10 ⁇ 7 or less, noise-after-write and output fluctuation were minimized and a degree of magnetostriction constant dependency was reduced.
  • a plating method in which film plating is performed while varying a stirring speed, bath temperature, bath composition, pH or any other parameter with time.
  • a stirring condition a stirrer bar was reciprocated in a plating solution in the vicinity of each substrate surface to be plated. More specifically, while an stirring speed of 70 reciprocations/minute was taken for an upper layer, a higher stirring speed of 100 reciprocations/minute was taken for an initial layer, resulting in suppression of Fe richness in the initial layer.
  • a bath temperature condition a bath temperature of 38° C. was set at the start of plating, and then the bath temperature was regulatingly decreased to 30° C.
  • an NiFe alloy having an Ni content of 44 to 48 wt %, which provides a high saturation flux density may be used as an upper shield material.
  • a film composition difference ⁇ Ni between the initial and upper layers can be reduced by properly varying current values stepwise.
  • FIG. 12 is a sectional view showing an upper write pole 4 formed by electroplating, which corresponds to the end part of a magnetic core 10 indicated in FIG. 13.
  • the upper write pole 4 is made of permalloy or NiFe alloy material having an Ni content of 44 to 48 wt %, which provides a high saturation flux density.
  • a film composition difference ⁇ Ni of 3.0 wt % between the initial and upper layers was reduced to 0.5 wt %.
  • EDX Electronicgy Dispersive X-ray analysis
  • the upper write pole 4 can be formed in the following manner: First, on a substrate 1 , a plating conductive under-layer film 2 is formed by sputtering technique, and then a resist frame 3 is formed into the shape of the magnetic core 10 including the upper write pole 4 . Thereafter, film plating is performed so that the upper write pole 4 is formed in a space having an inter-frame distance of 0.5 to 1.0 ⁇ m and a frame height of 5 to 10 ⁇ m. Thus, the upper write pole 4 is formed as an extremely narrow part having an aspect ratio of 10 to 20. Since there is a significant difference in area between the upper write pole 4 and the adjacent plating pattern part, a difference in current density tends to occur. Further, depending on bath stirring conditions, a difference in bath composition tends to occur. These are the causes of composition variation in the direction of film thickness.
  • FIG. 14 shows a structural scheme of the magnetic disk apparatus thus manufactured.
  • an upper shield film is formed in such a fashion that the composition of an initial layer in plating is precisely controlled by varying plating current density stepwise.

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  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
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  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
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US20050286170A1 (en) * 2004-06-23 2005-12-29 Tdk Corporation Magnetic head for perpendicular magnetic recording
US20080002308A1 (en) * 2006-06-19 2008-01-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetic shield, manufacturing method thereof and thin film magnetic head employing the same

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JP2004334995A (ja) 2003-05-09 2004-11-25 Hitachi Ltd 薄膜磁気ヘッド
US8085038B2 (en) * 2007-05-25 2011-12-27 Tdk Corporation Method for testing noise of thin-film magnetic head, and magnetic disk drive apparatus with noise testing function
US8570683B2 (en) * 2011-06-24 2013-10-29 HGST Netherlands B.V. Low permeability material for a side shield in a perpendicular magnetic head

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US6025978A (en) * 1996-12-20 2000-02-15 Read-Rite Smi Corporation Composite type thin-film magnetic head with improved recording characteristics and high resolution
US6687082B1 (en) * 1999-10-06 2004-02-03 Nec Corporation Magnetic head and manufacturing method thereof and magnetic recording and reproducing apparatus

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US20050286170A1 (en) * 2004-06-23 2005-12-29 Tdk Corporation Magnetic head for perpendicular magnetic recording
US7312951B2 (en) * 2004-06-23 2007-12-25 Tdk Corporation Magnetic head for perpendicular magnetic recording
US20080002308A1 (en) * 2006-06-19 2008-01-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetic shield, manufacturing method thereof and thin film magnetic head employing the same
US7995311B2 (en) 2006-06-19 2011-08-09 Hitachi Global Storage Technologies Netherlands Bv Magnetic shield, manufacturing method thereof and thin film magnetic head employing the same

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