US20010026906A1 - Process for manufacturing semiconductor device and exposure mask - Google Patents

Process for manufacturing semiconductor device and exposure mask Download PDF

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Publication number
US20010026906A1
US20010026906A1 US09/875,037 US87503701A US2001026906A1 US 20010026906 A1 US20010026906 A1 US 20010026906A1 US 87503701 A US87503701 A US 87503701A US 2001026906 A1 US2001026906 A1 US 2001026906A1
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wafer
pattern
forming
copper
semiconductor device
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US09/875,037
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Yoshihisa Matsubara
Kazumi Sugai
Nobukazu Ito
Kazuyoshi Ueno
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NEC Corp
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NEC Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • This invention relates to a process for manufacturing a semiconductor device.
  • it relates to a process for manufacturing a semiconductor device using a damascene method where an interconnection is formed by burying an interconnection metal in a groove on an insulating layer, especially a copper damascene.
  • This invention also relates to an exposure mask optimized for the process.
  • the copper interconnection is generally formed by burying copper in a groove on an interlayer insulating film and then flattening the surface (a damascene method).
  • a plurality of semiconductor devices is simultaneously formed on a single wafer, and then divided into individual semiconductor device.
  • a wafer has increasingly become larger particularly for reducing a cost.
  • a wafer with a diameter of 200 mm is commonly used, and a mounting technique to a wafer with a diameter of 300 mm is going to be established.
  • copper is buried in a groove by forming a groove pattern for burying copper on a sheet of wafer; forming a barrier metal layer and a seed metal layer by spattering; depositing a thick copper layer by an appropriate technique such electrolytic plating; and then flattering the surface.
  • a groove pattern is formed by forming an insulating layer such as a silicon oxide film on, for example, a silicon wafer; applying a photoresist on the insulating film; exposing and developing an individual wafer to form a resist pattern; and etching the insulating layer by anisotropic etching such as dry etching using the resist pattern as a mask.
  • an insulating layer such as a silicon oxide film
  • a photoresist on the insulating film
  • exposing and developing an individual wafer to form a resist pattern and etching the insulating layer by anisotropic etching such as dry etching using the resist pattern as a mask.
  • an exposure pattern has been formed by exposing the wafer using a mask corresponding to an interconnection pattern (the first mask 2 ) in an area of the wafer 1 where devices can be taken to form the interconnection pattern while using a mask such as a ground glass without a pattern (a blank mask 4 ) in the periphery of the wafer where devices cannot be taken for no-pattern exposure (i.e., exposure leaving no resist patterns) as illustrated in FIG. 6, or exposing the whole surface of the wafer using only the first mask 2 corresponding to the above interconnection pattern to form only the interconnection pattern as illustrated in FIG. 7.
  • FIGS. 8 and 9 are process cross-sections illustrating a wafer edge during forming a copper interconnection, where the whole surface is exposed using the first mask corresponding to an interconnection pattern.
  • first interconnection layer is made of copper.
  • An insulating film 102 is deposited on a silicon substrate 101 having a transistor (unshown) and a contact hole (unshown) (FIG. 8(A)).
  • a stopper film 103 such as an SiN film to a thickness of about 50 nm, on which is then deposited a flat insulating film 104 consisting of a silicon oxide to a thickness of about 400 nm for forming a groove in which copper is to be buried.
  • a positive photoresist is applied.
  • the surface is exposed using only the mask having the reversed interconnection pattern as illustrated in FIG. 7 and developed to leave a resist pattern in the exposed area (unshown).
  • the flat insulating film 104 is etched using the resist pattern as a mask to form a groove pattern as shown in FIG. 8(B).
  • the substrate having the groove pattern is placed in a spattering equipment.
  • a barrier film 105 consisting of a high-melting metal nitride such as TaN to about 20 nm and then a Cu film 106 to about 100 nm.
  • the periphery of the wafer is held by a clamp 107 as shown in FIG. 8 (C) for preventing the materials from going around to the rear face of the wafer.
  • the clamp 107 covers the periphery to about 3 mm from the wafer edge, and has an overhang-eaves end for preventing the clamp from being connected with the substrate via the material deposited by spattering.
  • copper is deposited by an appropriate technique such as electrolytic plating to a thickness of 800 nm, during which plated copper 109 grows around the adhering copper particles 108 and finally is joined with the plated copper 109 deposited on the spattered copper film 106 (FIG. 9(B)).
  • the plated copper 109 , the spattered copper 106 and the barrier film 105 are polished by CMP until the surface of the groove oxide film 104 is exposed, the surface is flattened, and thereby copper is buried in the groove.
  • An objective of this invention is to provide a process for manufacturing a semiconductor device comprising a buried copper interconnection in which the above problem of peeling does not occur.
  • this invention provides a process for manufacturing a semiconductor device where a plurality of wafers is formed on a single wafer, comprising the steps of forming a groove pattern in an insulating layer on a wafer; forming a seed metal layer in the groove by spattering; depositing an interconnection metal layer on the seed metal layer by electrolytic plating; and then flattering the wafer to the surface of the insulating layer, wherein during forming the groove pattern in the insulating layer, the groove pattern is formed in the area on the wafer where devices can be taken while forming a dummy pattern up to 30 ⁇ m long in the wafer periphery where devices cannot be taken.
  • This invention also provides an exposure mask optimized for the above process.
  • a given shape of dummy pattern is formed in the wafer periphery where devices cannot be taken, so that film peeling during CMP, interconnection short-circuit and carrier contamination can be prevented. Furthermore, a data ratio for the dummy pattern may be optimized to prevent a polishing rate from being reduced during CMP.
  • FIG. 1 is a conception diagram illustrating a configuration of masks used in the process of this invention.
  • FIG. 2 is a process cross-section illustrating the first half of a process for forming a copper interconnection layer according to an embodiment of this invention.
  • FIG. 3 is a process cross-section illustrating the latter half of the process for forming a copper interconnection layer according to the embodiment of this invention.
  • FIG. 4 is a graph showing change in a peeling length to a dummy-pattern size in a wafer periphery.
  • FIG. 5 is a graph showing change in a CMP polishing rate to a data ratio in a dummy pattern in the wafer periphery.
  • FIG. 6 is a conception diagram illustrating a mask configuration used in a conventional exposure process.
  • FIG. 7 is a conception diagram illustrating a mask configuration used in another conventional exposure process.
  • FIG. 8 is a process cross-section illustrating a conventional process for forming a copper interconnection layer.
  • FIG. 9 is an enlarged cross-section illustrating the problems in the prior art.
  • FIGS. 2 and 3 are process cross-sections illustrating an embodiment of this invention, where copper is used for an interconnection in the first layer.
  • an insulating film 102 is deposited on a silicon substrate 101 having a transistor (unshown) and a contact hole (unshown) (FIG. 2 (A)).
  • a stopper film 103 such as an SiN film to a thickness of about 50 nm, on which is then deposited a flat insulating film 104 consisting of a silicon oxide film to a thickness of about 400 nm for forming a groove in which copper is to be buried.
  • a positive type of photoresist is applied.
  • the periphery and then the central part are exposed using two different masks having a reversed pattern and are developed to leave a resist pattern in the exposed area (unshown).
  • FIG. 1 shows the configuration of the two different masks used in exposure.
  • the first mask 2 is for the device forming area in the inside of the wafer 1 and has a desired interconnection pattern.
  • the second mask 3 has only a pattern consisting of identical rectangles. It is preferable to expose the periphery using the second mask 3 as described above and then expose the inside part from which products are to be taken, using the first mask 2 because a longer time from exposure to development may deteriorate a pattern resolution.
  • the substrate having the groove pattern is placed in a spattering equipment.
  • a barrier film 105 consisting of a high-melting metal nitride such as TaN to about 20 nm and then a Cu film 106 to about 100 nm.
  • the periphery of the wafer is held by a clamp 107 as shown in FIG. 2(C) for preventing the materials from going around to the rear face of the wafer.
  • the dummy pattern size is limited to 30 ⁇ m or less in the process of this invention. There are no restrictions to its lower limit as long as it is larger than twice the total thickness of the barrier film 105 and the spattered Cu film 106 for burying copper in the groove. For the above case, the size must be at least 0.25 ⁇ m for ensuring that it is larger than twice the thickness of ⁇ the barrier film (20 nm)+the spattered Cu film (100 nm) ⁇ . In practice, an exposure mask used for forming such a dummy pattern is designed according to a design rule for an interconnection pitch.
  • a dummy pattern is designed to have a size corresponding to an integral multiple (1-, 2-, or n-fold) of the rule, i.e., 0.28, 0.56, . . . or 0.28n ⁇ m.
  • a pattern deviated from the design rule may be formed, but is not practical because a sequence for pattern checking becomes more complicated.
  • each dummy pattern has a size up to 30 ⁇ m. It may be any shape such as square, rectangle, L-shape, cruciform and U-shape.

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

In a process for manufacturing a semiconductor device where a plurality of wafers are formed on a single wafer, comprising the steps of forming a groove pattern in an insulating layer on a wafer; forming a seed metal layer in the groove by spattering; depositing an interconnection metal layer on the seed metal layer by electrolytic plating; and then flattering the wafer to the surface of the insulating layer, during forming the groove pattern in the insulating layer, the groove pattern is formed in the area on the wafer where devices can be taken while forming a dummy pattern up to 30 μm long in the wafer periphery where devices cannot be taken, to prevent the interconnection metal layer from being peeled in the wafer periphery.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • This invention relates to a process for manufacturing a semiconductor device. In particular, it relates to a process for manufacturing a semiconductor device using a damascene method where an interconnection is formed by burying an interconnection metal in a groove on an insulating layer, especially a copper damascene. This invention also relates to an exposure mask optimized for the process. [0002]
  • 2. Description of the Related Art [0003]
  • Aluminum has been frequently used as an interconnection layer in a semiconductor device. However, it has been recently proposed to use Cu exhibiting a lower resistance as an interconnection material, and in some cases, it has been practically used. [0004]
  • Due to difficulty in dry-etching copper, photolithography cannot be used for patterning the copper interconnection as is in a conventional aluminum interconnection. Therefore, the copper interconnection is generally formed by burying copper in a groove on an interlayer insulating film and then flattening the surface (a damascene method). [0005]
  • In a common process for manufacturing a semiconductor device, a plurality of semiconductor devices is simultaneously formed on a single wafer, and then divided into individual semiconductor device. A wafer has increasingly become larger particularly for reducing a cost. Now, a wafer with a diameter of 200 mm is commonly used, and a mounting technique to a wafer with a diameter of 300 mm is going to be established. [0006]
  • Such a trend holds true for forming a buried interconnection such as a copper interconnection. Specifically, copper is buried in a groove by forming a groove pattern for burying copper on a sheet of wafer; forming a barrier metal layer and a seed metal layer by spattering; depositing a thick copper layer by an appropriate technique such electrolytic plating; and then flattering the surface. [0007]
  • A groove pattern is formed by forming an insulating layer such as a silicon oxide film on, for example, a silicon wafer; applying a photoresist on the insulating film; exposing and developing an individual wafer to form a resist pattern; and etching the insulating layer by anisotropic etching such as dry etching using the resist pattern as a mask. [0008]
  • In the process, an exposure pattern has been formed by exposing the wafer using a mask corresponding to an interconnection pattern (the first mask [0009] 2) in an area of the wafer 1 where devices can be taken to form the interconnection pattern while using a mask such as a ground glass without a pattern (a blank mask 4) in the periphery of the wafer where devices cannot be taken for no-pattern exposure (i.e., exposure leaving no resist patterns) as illustrated in FIG. 6, or exposing the whole surface of the wafer using only the first mask 2 corresponding to the above interconnection pattern to form only the interconnection pattern as illustrated in FIG. 7.
  • FIGS. 8 and 9 are process cross-sections illustrating a wafer edge during forming a copper interconnection, where the whole surface is exposed using the first mask corresponding to an interconnection pattern. Herein, a case where the first interconnection layer is made of copper will be described. [0010]
  • An [0011] insulating film 102 is deposited on a silicon substrate 101 having a transistor (unshown) and a contact hole (unshown) (FIG. 8(A)). On the film is deposited a stopper film 103 such as an SiN film to a thickness of about 50 nm, on which is then deposited a flat insulating film 104 consisting of a silicon oxide to a thickness of about 400 nm for forming a groove in which copper is to be buried. On the film, a positive photoresist is applied. Then, the surface is exposed using only the mask having the reversed interconnection pattern as illustrated in FIG. 7 and developed to leave a resist pattern in the exposed area (unshown). The flat insulating film 104 is etched using the resist pattern as a mask to form a groove pattern as shown in FIG. 8(B).
  • Then, the substrate having the groove pattern is placed in a spattering equipment. On the substrate are deposited by spattering a [0012] barrier film 105 consisting of a high-melting metal nitride such as TaN to about 20 nm and then a Cu film 106 to about 100 nm. During the process, the periphery of the wafer is held by a clamp 107 as shown in FIG. 8 (C) for preventing the materials from going around to the rear face of the wafer. The clamp 107 covers the periphery to about 3 mm from the wafer edge, and has an overhang-eaves end for preventing the clamp from being connected with the substrate via the material deposited by spattering.
  • As illustrated in FIG. 9(A), [0013] copper particles 108 splashed during depositing copper adhere to the area under the end eaves of the clamp. The adhering copper particles 108 are significantly fewer adherents to the base layer than the Cu film 106 deposited by spattering.
  • Then, copper is deposited by an appropriate technique such as electrolytic plating to a thickness of 800 nm, during which [0014] plated copper 109 grows around the adhering copper particles 108 and finally is joined with the plated copper 109 deposited on the spattered copper film 106 (FIG. 9(B)).
  • Subsequently, the plated [0015] copper 109, the spattered copper 106 and the barrier film 105 are polished by CMP until the surface of the groove oxide film 104 is exposed, the surface is flattened, and thereby copper is buried in the groove.
  • However, since the [0016] plated copper 109 around the copper particles 108 is less adhesive, peeling may occur during the CMP process as shown in FIG. 9(C). Then, the peeled part may be separated when the wafer is reloaded on a wafer carrier to adhere to an area between interconnection patterns, causing interconnection short-circuit, or some peeled parts may adhere to the wafer carrier, leading to contamination of other wafers. These problems may be more prominent when exposing the periphery shown in FIG. 6 without a pattern.
  • Furthermore, the larger a wafer is, the longer the peripheral length of the wafer is and thus the more frequent the problems occur. [0017]
    • SUMMARY OF THE INVENTION
  • An objective of this invention is to provide a process for manufacturing a semiconductor device comprising a buried copper interconnection in which the above problem of peeling does not occur. [0018]
  • We have intensely investigated to solve the above problems and have finally found that peeling can be avoided by conducting exposure using a mask comprising a given pattern in the area corresponding to a wafer periphery where devices cannot be taken, to form a given shape of dummy pattern, in which copper is then buried. [0019]
  • Thus, this invention provides a process for manufacturing a semiconductor device where a plurality of wafers is formed on a single wafer, comprising the steps of forming a groove pattern in an insulating layer on a wafer; forming a seed metal layer in the groove by spattering; depositing an interconnection metal layer on the seed metal layer by electrolytic plating; and then flattering the wafer to the surface of the insulating layer, wherein during forming the groove pattern in the insulating layer, the groove pattern is formed in the area on the wafer where devices can be taken while forming a dummy pattern up to 30 μm long in the wafer periphery where devices cannot be taken. [0020]
  • This invention also provides an exposure mask optimized for the above process. [0021]
  • According to this invention, a given shape of dummy pattern is formed in the wafer periphery where devices cannot be taken, so that film peeling during CMP, interconnection short-circuit and carrier contamination can be prevented. Furthermore, a data ratio for the dummy pattern may be optimized to prevent a polishing rate from being reduced during CMP.[0022]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a conception diagram illustrating a configuration of masks used in the process of this invention. [0023]
  • FIG. 2 is a process cross-section illustrating the first half of a process for forming a copper interconnection layer according to an embodiment of this invention. [0024]
  • FIG. 3 is a process cross-section illustrating the latter half of the process for forming a copper interconnection layer according to the embodiment of this invention. [0025]
  • FIG. 4 is a graph showing change in a peeling length to a dummy-pattern size in a wafer periphery. [0026]
  • FIG. 5 is a graph showing change in a CMP polishing rate to a data ratio in a dummy pattern in the wafer periphery. [0027]
  • FIG. 6 is a conception diagram illustrating a mask configuration used in a conventional exposure process. [0028]
  • FIG. 7 is a conception diagram illustrating a mask configuration used in another conventional exposure process. [0029]
  • FIG. 8 is a process cross-section illustrating a conventional process for forming a copper interconnection layer. [0030]
  • FIG. 9 is an enlarged cross-section illustrating the problems in the prior art.[0031]
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • This invention will be specifically described, but not limited to, with reference to an example. [0032]
    • EXAMPLE 1
  • FIGS. 2 and 3 are process cross-sections illustrating an embodiment of this invention, where copper is used for an interconnection in the first layer. [0033]
  • First, an [0034] insulating film 102 is deposited on a silicon substrate 101 having a transistor (unshown) and a contact hole (unshown) (FIG. 2 (A)). On the film is deposited a stopper film 103 such as an SiN film to a thickness of about 50 nm, on which is then deposited a flat insulating film 104 consisting of a silicon oxide film to a thickness of about 400 nm for forming a groove in which copper is to be buried. On the film, a positive type of photoresist is applied. Then, the periphery and then the central part are exposed using two different masks having a reversed pattern and are developed to leave a resist pattern in the exposed area (unshown). The flat insulating film 104 is etched using the resist pattern as a mask to form a groove pattern as shown in FIG. 2(B). FIG. 1 shows the configuration of the two different masks used in exposure. The first mask 2 is for the device forming area in the inside of the wafer 1 and has a desired interconnection pattern. The second mask 3 has only a pattern consisting of identical rectangles. It is preferable to expose the periphery using the second mask 3 as described above and then expose the inside part from which products are to be taken, using the first mask 2 because a longer time from exposure to development may deteriorate a pattern resolution.
  • Then, the substrate having the groove pattern is placed in a spattering equipment. On the substrate are deposited by spattering a [0035] barrier film 105 consisting of a high-melting metal nitride such as TaN to about 20 nm and then a Cu film 106 to about 100 nm. During the process, the periphery of the wafer is held by a clamp 107 as shown in FIG. 2(C) for preventing the materials from going around to the rear face of the wafer.
  • Then, copper is deposited by an appropriate technique such as electrolytic plating to a thickness of 800 nm (FIG. 3(A)). Subsequently, the plated [0036] copper 109, the spattered copper 106 and the barrier film 105 are polished by CMP until the surface of the groove oxide film 104 is exposed, the surface is flattened, and thereby copper is buried in the groove to give the structure shown in FIG. 3(B).
  • The dummy pattern formed by periphery exposure will be described in detail. [0037]
  • Dummy-Pattern Size: [0038]
  • We investigated relationship of a peeling area to a dummy-pattern size, and the results are shown in FIG. 4. The results in the figure were obtained by forming a reversed pattern consisting of rectangular dots in a mask corresponding to a chip size of 25×25 mm; exposing the whole surface of a 200 mm wafer using the pattern; developing and etching the wafer; forming a barrier film and a spattered copper film as described above; conducting copper plating and then CMP; and microscopically observing the wafer periphery to determine a peeling length. It can be seen from the figure that the larger the size is, the longer the peeling length is and peeling little occur when the dot size is 30 μm or less. The dummy pattern size is limited to 30 μm or less in the process of this invention. There are no restrictions to its lower limit as long as it is larger than twice the total thickness of the [0039] barrier film 105 and the spattered Cu film 106 for burying copper in the groove. For the above case, the size must be at least 0.25 μm for ensuring that it is larger than twice the thickness of {the barrier film (20 nm)+the spattered Cu film (100 nm)}. In practice, an exposure mask used for forming such a dummy pattern is designed according to a design rule for an interconnection pitch. Specifically, when an interconnection pitch is designed using a 0.28 μm rule, a dummy pattern is designed to have a size corresponding to an integral multiple (1-, 2-, or n-fold) of the rule, i.e., 0.28, 0.56, . . . or 0.28n μm. A pattern deviated from the design rule may be formed, but is not practical because a sequence for pattern checking becomes more complicated.
  • There are no limitations for the shape of the dummy pattern as long as each dummy pattern has a size up to 30 μm. It may be any shape such as square, rectangle, L-shape, cruciform and U-shape. [0040]
  • Data Ratio: [0041]
  • We investigated an effect of a ratio of the pattern area to the total area (data ratio) on a polishing rate during CMP. The results are shown in FIG. 5. The results indicate that the less the pattern is, the lower the polishing rate is and the higher the process load is. Since the polishing rate of 1000 Å/min or higher is practically sufficient, it is preferable that the data ratio is 10% or higher. There are no restrictions for the upper limit of the data ratio. However, it is generally about 30% because calculating a design for a mask used requires a longer time as the data ratio increases. [0042]
  • Thus, a copper damascene interconnection has been described. This invention is, however, not limited to the particular interconnection and may be applied to forming either an interconnection or contact plug by a damascene method. [0043]
  • In addition, there has been described pattern formation by photolithography using a mask, but a pattern may be formed by direct drawing using an electron beam. [0044]

Claims (6)

What is claimed is:
1. A process for manufacturing a semiconductor device where a plurality of wafers are formed on a single wafer, comprising the steps of forming a groove pattern in an insulating layer on a wafer; forming a seed metal layer in the groove by spattering; depositing an interconnection metal layer on the seed metal layer by electrolytic plating; and then flattering the wafer to the surface of the insulating layer, wherein during forming the groove pattern in the insulating layer, the groove pattern is formed in the area on the wafer where devices can be taken while forming a dummy pattern up to 30 μm long in the wafer periphery where devices cannot be taken.
2. A process for manufacturing a semiconductor device as claimed in
claim 1
 where the data ratio of the mask for forming the dummy pattern in the wafer periphery where devices cannot be taken is 10% or higher.
3. A process for manufacturing a semiconductor device as claimed in
claim 1
 where the groove pattern and the dummy pattern are formed by photolithography and dummy pattern exposure is conducted before groove pattern exposure for the device area.
4. A process for manufacturing a semiconductor device as claimed in
claim 1
 where the interconnection metal layer consists of copper or a copper alloy.
5. A process for manufacturing a semiconductor device as claimed in
claim 4
 where the seed metal layer is a spattered copper film.
6. A process for manufacturing a semiconductor device as claimed in
claim 1
 where there is a barrier metal layer between the seed metal layer and the insulating layer.
US09/875,037 1999-02-25 2001-06-07 Process for manufacturing semiconductor device and exposure mask Abandoned US20010026906A1 (en)

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US09/875,037 US20010026906A1 (en) 1999-02-25 2001-06-07 Process for manufacturing semiconductor device and exposure mask

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US20040147128A1 (en) * 2003-01-29 2004-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming patterned features at a semiconductor wafer periphery to prevent metal peeling

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US20020168810A1 (en) * 2001-03-30 2002-11-14 The Penn State Research Foundation Lateral nanostructures by vertical processing
KR20020092118A (en) * 2001-06-02 2002-12-11 삼성전자 주식회사 Method for fabricating semiconductor device having uniformly flat inter- metal dielectric layer
JP2002367939A (en) * 2001-06-05 2002-12-20 Speedfam Co Ltd Method for fabricating semiconductor device and apparatus for removing unwanted film on periphery thereof
JP2002367897A (en) * 2001-06-11 2002-12-20 Denso Corp Method for manufacturing semiconductor device
KR100431527B1 (en) * 2001-10-22 2004-05-14 주식회사 하이닉스반도체 Method of forming semiconductor device including dummy pattern outside of wafer
US20040266174A1 (en) * 2003-06-27 2004-12-30 Chin-Tien Yang Method and apparatus of preventing tungsten pullout during tungsten chemical mill processing
US7074710B2 (en) * 2004-11-03 2006-07-11 Lsi Logic Corporation Method of wafer patterning for reducing edge exclusion zone
JP4817912B2 (en) * 2006-03-23 2011-11-16 富士通セミコンダクター株式会社 Layout determining method, semiconductor device manufacturing method, program, and storage medium
KR100823035B1 (en) * 2006-12-18 2008-04-17 동부일렉트로닉스 주식회사 Method for fabricating semiconductor device
KR100944331B1 (en) * 2007-06-29 2010-03-03 주식회사 하이닉스반도체 Exposure mask and method for manufacturing semiconductor device using the same
US8884402B2 (en) 2010-04-28 2014-11-11 United Microelectronics Corp. Circuit layout structure
US20150371956A1 (en) * 2014-06-19 2015-12-24 Globalfoundries Inc. Crackstops for bulk semiconductor wafers
CN105244258A (en) * 2015-10-23 2016-01-13 京东方科技集团股份有限公司 Array substrate manufacture method
US10777424B2 (en) * 2018-02-27 2020-09-15 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device
KR20220040124A (en) * 2020-09-23 2022-03-30 삼성전자주식회사 A method of manufacturing a semiconductor device, a seconductor device manufactured by the same method

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US20040147128A1 (en) * 2003-01-29 2004-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming patterned features at a semiconductor wafer periphery to prevent metal peeling
US6833323B2 (en) * 2003-01-29 2004-12-21 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming patterned features at a semiconductor wafer periphery to prevent metal peeling

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EP1032025A2 (en) 2000-08-30

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