US20010018250A1 - Process for the fabrication of an integrated circuit comprising MOS transistors for low voltage, EPROM cells and MOS transistors for high voltage - Google Patents
Process for the fabrication of an integrated circuit comprising MOS transistors for low voltage, EPROM cells and MOS transistors for high voltage Download PDFInfo
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- US20010018250A1 US20010018250A1 US09/727,266 US72726600A US2001018250A1 US 20010018250 A1 US20010018250 A1 US 20010018250A1 US 72726600 A US72726600 A US 72726600A US 2001018250 A1 US2001018250 A1 US 2001018250A1
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- 238000000034 method Methods 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 16
- 210000000746 body region Anatomy 0.000 claims abstract description 7
- 239000003989 dielectric material Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000015654 memory Effects 0.000 description 10
- 230000000873 masking effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/46—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with an inter-gate dielectric layer also being used as part of the peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Definitions
- the present invention relates to the fabrication of integrated circuits and, more particularly, to a process for forming an integrated circuit comprising low voltage MOS transistors, EPROM cells, and high voltage MOS transistors.
- the low voltage MOS transistors include gate electrodes separated from a substrate by a first dielectric material.
- the high voltage MOS transistors include gate electrodes separated from the substrate by a second dielectric material.
- the EPROM cells include floating gate electrodes separated from the substrate by a third dielectric material, and includes corresponding control electrodes separated from the floating gate electrodes by the second dielectric material.
- Low voltage technology uses processes for forming devices, particularly MOS transistors, capable of withstanding relative low voltages within a range of 1 to 3 V. Low voltage throughout the application will be indicated by the symbol LV.
- the decoding circuits of the memories require devices, essentially MOS transistors, capable of operating at relatively high voltages within a range of 7 to 10 V.
- High voltage throughout the application will be indicated by the symbol HV.
- the gate dielectrics of the HV devices must have physical characteristics and/or thicknesses which are different from those used in the LV devices. Therefore, the HV devices require special operations for their formation and definition.
- the gate dielectrics of EPROM cells require a thickness which is different from that of the gate dielectrics of the LV devices and the HV devices.
- the gate dielectrics of EPROM cells also requires specific characteristics to ensure the permanence of the stored data over time.
- a prior art process for forming the different types of devices in a single integrated circuit includes the combination of the three specific processes for forming the three types of devices. In other words, this process requires a number of masking operations close to the sum of the masking operations of the three specific processes. However, a process of this kind has a high cost due to both the large number of operations required, and the resulting low yield. The production yield decreases with an increase in a number of operations in the process.
- Producing HV circuits together with LV circuits without making use of specific processes for HV devices can be accomplished using a known circuit arrangement in which two or more LV devices, connected in a cascode configuration, are used.
- this approach can be applied advantageously only when the number of HV devices is small. Otherwise, because each HV device is formed from at least two LV devices, the supplementary area required becomes unacceptably large. Moreover, this does not help with the formation of the memory cells. All the specific operations for producing memory cells have to be added to the process in any case.
- An object of the present invention is to provide a process for forming low voltage circuits, high voltage circuits and EPROM memory cells of the one time programmable OTP type within a single integrated circuit by using a small number of operations in addition to those normally used for forming low voltage circuits. This achieves a production yield very close to that which can be achieved with a process designed for forming logic circuits with transistors of the low voltage type.
- FIGS. 1 to 8 show a cross section of three portions of an integrated circuit formed on a wafer of monocrystalline silicon using successive steps of the process according to the present invention.
- the three illustrated portions relate to a pair of low voltage MOS transistors indicated by LV, a pair of high voltage MOS transistors indicated by HV, and a memory cell of a matrix of EFPROM cells indicated by EPROM.
- the pair of low voltage MOS transistors includes an n-channel type and a p-channel type indicated by LVnch and LVpch, respectively.
- the pair of high voltage MOS transistors includes an n-channel type and a p-channel type indicated by HVnch and HVpch, respectively.
- FIG. 1 shows the structures of the three portions after a series of well known operations of an integrated circuit fabrication process. Briefly, these operations comprise, initially, the definition on a substrate 10 of monocrystalline silicon of p-type areas. These p-type areas are known as active areas, and are insulated from each other by silicon dioxide inserts 11 , known as the field oxide.
- a next step is the doping of the active areas to form p-type and n-type regions designed to form the body regions of the LV and HV MOS transistors and of the EPROM cells. This is followed by the formation of a relatively thin (5-10 nm) layer 12 of silicon dioxide by thermal oxidation of the silicon of the substrate, and the formation of a layer 13 of polycrystalline silicon doped with n-type impurities on the oxide layer 12 .
- the polycrystalline silicon is then removed selectively by the use of known photolithographic techniques to form the floating gate electrodes of the EPROM cells. Only one of these electrodes, indicated by 13 a , is shown in FIG. 2. The portion 12 a of the thin oxide layer 12 which is located under the gate electrode 13 a forms the gate dielectric of the EPROM cell. Doping impurities are then implanted in the p-type body regions of the cells to form n-type source and drain regions indicated by 14 in FIG. 2.
- a layer 15 of silicon dioxide (FIG. 4) is then formed over the entire wafer by a deposition treatment carried out at a relatively high temperature (700-800° C.). This treatment is known by the abbreviation HTO (High Temperature Oxidation). This layer has a thickness within the range of 10 to 20 nm. This is followed by an annealing treatment in an atmosphere containing nitrogen, for example, N 2 O at 900° C. The silicon dioxide of the layer 15 is thus “nitrided.”
- the silicon dioxide is permeated by nitrogen atoms which, without changing their chemical structure, impart to the resulting material characteristics which make it suitable for use either as a gate dielectric for HV transistors or as an intermediate dielectric for EPROM cells. This makes it impermeable to oxygen atoms, thus permitting a further stage of thermal oxidation on other areas of the substrate.
- the other areas are those to be used for the LV transistors, which, in order to be subjected to thermal oxidation, are subjected (FIG. 5) to a suitable etching process to remove all the layers formed on them by the preceding operations.
- the parameters in this stage of processing are selected in such a way to form a layer 16 of silicon dioxide having the thickness required for the gate dielectric of the LV transistors (for example, 5 nm).
- the polycrystalline silicon of this layer is then removed selectively by known photolithographic techniques to form the control gate electrodes 17 a (FIG. 8) of the EPROM cells, the gate electrodes 17 b of the HV transistors and the gate electrodes 17 c of the LV transistors.
- the source and drain regions of the transistors are formed in the body regions of the HV and LV transistors in the usual way. That is, by suitable masking and implantation of doping impurities of the n-type for the n-channel transistors and of the p-type for the p-channel transistors.
- the process continues with the usual operations for forming the integrated circuit. These processes include forming metal connections between the components of the integrated circuit, coating with a layer of protective dielectric, and forming terminal contact electrodes of the integrated circuit. The wafer is then cut into chips, and the individual chips are mounted in suitable structures for connection to an external circuit.
- EPROM memory cells suitable for being programmed at least once in a secure way and with excellent stability.
- the EPROM memory cells also retain the desirable characteristics of the dielectric material (HTO) used for the intermediate dielectric. This is at the same time as high-quality HV transistors are formed by using only three masks in addition to those necessary for an ordinary process of fabricating integrated logic circuits containing only LV transistors.
- HTO dielectric material
- the total number of masks is much smaller than it is for a process based upon a combination of the known specific processes for forming LV transistors, EPROM cells and HV transistors.
- the process according to the invention is very convenient in terms of production costs because the total treatment time is short, and the production yield is relatively high.
- the supplementary operations do not interfere with the ordinary operations for forming the characteristic elements of the LV transistors (thermal oxide for the gate dielectric, implantation of body, source and drain), and therefore, the logic circuits obtainable by the process according to the invention do not differ from those obtainable by an ordinary process designed to produce only this type of circuit.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
- The present invention relates to the fabrication of integrated circuits and, more particularly, to a process for forming an integrated circuit comprising low voltage MOS transistors, EPROM cells, and high voltage MOS transistors. The low voltage MOS transistors include gate electrodes separated from a substrate by a first dielectric material. The high voltage MOS transistors include gate electrodes separated from the substrate by a second dielectric material. The EPROM cells include floating gate electrodes separated from the substrate by a third dielectric material, and includes corresponding control electrodes separated from the floating gate electrodes by the second dielectric material.
- In the design of integrated circuit devices intended for the processing of digital signals, such as microprocessors, for example, it is sometimes necessary to include an electrically programmable non-volatile memory cell and corresponding decoding circuits in the same integrated circuit. These electrically programmable non-volatile memory cells are known as electrically programmable read only memories EPROMS.
- This requirement gives rise to considerable problems in manufacture, and primarily because of the following reason. The processing circuits, or logic circuits for short, are made using low voltage technology. Low voltage technology uses processes for forming devices, particularly MOS transistors, capable of withstanding relative low voltages within a range of 1 to 3 V. Low voltage throughout the application will be indicated by the symbol LV.
- In contrast, the decoding circuits of the memories require devices, essentially MOS transistors, capable of operating at relatively high voltages within a range of 7 to 10 V. High voltage throughout the application will be indicated by the symbol HV. This means that the gate dielectrics of the HV devices must have physical characteristics and/or thicknesses which are different from those used in the LV devices. Therefore, the HV devices require special operations for their formation and definition.
- In addition, the gate dielectrics of EPROM cells require a thickness which is different from that of the gate dielectrics of the LV devices and the HV devices. The gate dielectrics of EPROM cells also requires specific characteristics to ensure the permanence of the stored data over time.
- A prior art process for forming the different types of devices in a single integrated circuit includes the combination of the three specific processes for forming the three types of devices. In other words, this process requires a number of masking operations close to the sum of the masking operations of the three specific processes. However, a process of this kind has a high cost due to both the large number of operations required, and the resulting low yield. The production yield decreases with an increase in a number of operations in the process.
- Producing HV circuits together with LV circuits without making use of specific processes for HV devices can be accomplished using a known circuit arrangement in which two or more LV devices, connected in a cascode configuration, are used. However, this approach can be applied advantageously only when the number of HV devices is small. Otherwise, because each HV device is formed from at least two LV devices, the supplementary area required becomes unacceptably large. Moreover, this does not help with the formation of the memory cells. All the specific operations for producing memory cells have to be added to the process in any case.
- An object of the present invention is to provide a process for forming low voltage circuits, high voltage circuits and EPROM memory cells of the one time programmable OTP type within a single integrated circuit by using a small number of operations in addition to those normally used for forming low voltage circuits. This achieves a production yield very close to that which can be achieved with a process designed for forming logic circuits with transistors of the low voltage type.
- This object is achieved by applying the process defined in a general way in the first claim.
- The invention will be more clearly understood from the following detailed description of an embodiment provided by way of an example and, therefore, without restrictive intent, with reference to the attached drawings.
- FIGS.1 to 8 show a cross section of three portions of an integrated circuit formed on a wafer of monocrystalline silicon using successive steps of the process according to the present invention. Detailed Description of the Preferred Embodiments Referring now to FIGS. 1 to 8, the three illustrated portions relate to a pair of low voltage MOS transistors indicated by LV, a pair of high voltage MOS transistors indicated by HV, and a memory cell of a matrix of EFPROM cells indicated by EPROM. The pair of low voltage MOS transistors includes an n-channel type and a p-channel type indicated by LVnch and LVpch, respectively. The pair of high voltage MOS transistors includes an n-channel type and a p-channel type indicated by HVnch and HVpch, respectively.
- FIG. 1 shows the structures of the three portions after a series of well known operations of an integrated circuit fabrication process. Briefly, these operations comprise, initially, the definition on a
substrate 10 of monocrystalline silicon of p-type areas. These p-type areas are known as active areas, and are insulated from each other bysilicon dioxide inserts 11, known as the field oxide. - A next step is the doping of the active areas to form p-type and n-type regions designed to form the body regions of the LV and HV MOS transistors and of the EPROM cells. This is followed by the formation of a relatively thin (5-10 nm)
layer 12 of silicon dioxide by thermal oxidation of the silicon of the substrate, and the formation of alayer 13 of polycrystalline silicon doped with n-type impurities on theoxide layer 12. - The polycrystalline silicon is then removed selectively by the use of known photolithographic techniques to form the floating gate electrodes of the EPROM cells. Only one of these electrodes, indicated by13 a, is shown in FIG. 2. The
portion 12 a of thethin oxide layer 12 which is located under thegate electrode 13 a forms the gate dielectric of the EPROM cell. Doping impurities are then implanted in the p-type body regions of the cells to form n-type source and drain regions indicated by 14 in FIG. 2. - The superimposed layers of
polycrystalline silicon 13 andthin oxide 12 are removed by suitable chemical etching from the areas to be used for the HV transistors. The etching continues until the silicon of thesubstrate 10 is exposed, as shown in FIG. 3. - A
layer 15 of silicon dioxide (FIG. 4) is then formed over the entire wafer by a deposition treatment carried out at a relatively high temperature (700-800° C.). This treatment is known by the abbreviation HTO (High Temperature Oxidation). This layer has a thickness within the range of 10 to 20 nm. This is followed by an annealing treatment in an atmosphere containing nitrogen, for example, N2O at 900° C. The silicon dioxide of thelayer 15 is thus “nitrided.” - In other words, the silicon dioxide is permeated by nitrogen atoms which, without changing their chemical structure, impart to the resulting material characteristics which make it suitable for use either as a gate dielectric for HV transistors or as an intermediate dielectric for EPROM cells. This makes it impermeable to oxygen atoms, thus permitting a further stage of thermal oxidation on other areas of the substrate.
- The other areas are those to be used for the LV transistors, which, in order to be subjected to thermal oxidation, are subjected (FIG. 5) to a suitable etching process to remove all the layers formed on them by the preceding operations. The parameters in this stage of processing are selected in such a way to form a
layer 16 of silicon dioxide having the thickness required for the gate dielectric of the LV transistors (for example, 5 nm). - A second layer of non-doped polycrystalline silicon, indicated by17 (FIG. 7), is then deposited over the entire wafer. The polycrystalline silicon of this layer is then removed selectively by known photolithographic techniques to form the
control gate electrodes 17 a (FIG. 8) of the EPROM cells, thegate electrodes 17 b of the HV transistors and thegate electrodes 17 c of the LV transistors. - The source and drain regions of the transistors are formed in the body regions of the HV and LV transistors in the usual way. That is, by suitable masking and implantation of doping impurities of the n-type for the n-channel transistors and of the p-type for the p-channel transistors.
- The process continues with the usual operations for forming the integrated circuit. These processes include forming metal connections between the components of the integrated circuit, coating with a layer of protective dielectric, and forming terminal contact electrodes of the integrated circuit. The wafer is then cut into chips, and the individual chips are mounted in suitable structures for connection to an external circuit.
- Using the process according to the invention, it is possible to produce EPROM memory cells suitable for being programmed at least once in a secure way and with excellent stability. The EPROM memory cells also retain the desirable characteristics of the dielectric material (HTO) used for the intermediate dielectric. This is at the same time as high-quality HV transistors are formed by using only three masks in addition to those necessary for an ordinary process of fabricating integrated logic circuits containing only LV transistors.
- The total number of masks is much smaller than it is for a process based upon a combination of the known specific processes for forming LV transistors, EPROM cells and HV transistors. The process according to the invention is very convenient in terms of production costs because the total treatment time is short, and the production yield is relatively high.
- It should also be noted that the supplementary operations do not interfere with the ordinary operations for forming the characteristic elements of the LV transistors (thermal oxide for the gate dielectric, implantation of body, source and drain), and therefore, the logic circuits obtainable by the process according to the invention do not differ from those obtainable by an ordinary process designed to produce only this type of circuit.
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99830742A EP1104022A1 (en) | 1999-11-29 | 1999-11-29 | Process for the fabrication of an integrated circuit comprising low and high voltage MOS transistors and EPROM cells |
EP99830742 | 1999-11-29 | ||
EP99830742.5 | 1999-11-29 |
Publications (2)
Publication Number | Publication Date |
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US20010018250A1 true US20010018250A1 (en) | 2001-08-30 |
US6319780B2 US6319780B2 (en) | 2001-11-20 |
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US09/727,266 Expired - Lifetime US6319780B2 (en) | 1999-11-29 | 2000-11-29 | Process for the fabrication of an integrated circuit comprising MOS transistors for low voltage, EPROM cells and MOS transistors for high voltage |
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US (1) | US6319780B2 (en) |
EP (1) | EP1104022A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4078014B2 (en) * | 2000-05-26 | 2008-04-23 | 株式会社ルネサステクノロジ | Nonvolatile semiconductor memory device and manufacturing method thereof |
US6825083B1 (en) * | 2002-04-19 | 2004-11-30 | Advanced Micro Devices, Inc. | Method for reducing shallow trench isolation edge thinning on thin gate oxides to improve peripheral transistor reliability and performance for high performance flash memory devices |
US6969909B2 (en) * | 2002-12-20 | 2005-11-29 | Vlt, Inc. | Flip chip FET device |
US7038917B2 (en) * | 2002-12-27 | 2006-05-02 | Vlt, Inc. | Low loss, high density array interconnection |
US6900097B2 (en) * | 2003-05-12 | 2005-05-31 | United Microelectronics Corp. | Method for forming single-level electrically erasable and programmable read only memory operated in environment with high/low-voltage |
CN100343978C (en) * | 2004-06-23 | 2007-10-17 | 上海先进半导体制造有限公司 | Production of multi-layer poly-silicon memory element |
CN100442524C (en) * | 2005-09-28 | 2008-12-10 | 中芯国际集成电路制造(上海)有限公司 | Structure and method for disposable programmable memory for built-in EEPROM |
CN101330057B (en) * | 2007-06-21 | 2010-10-06 | 中芯国际集成电路制造(上海)有限公司 | Electric programmable device with embedded EEPROM and preparation method thereof |
US9349654B2 (en) * | 2014-03-28 | 2016-05-24 | Globalfoundries Singapore Pte. Ltd. | Isolation for embedded devices |
Family Cites Families (9)
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JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
JP3548984B2 (en) * | 1991-11-14 | 2004-08-04 | 富士通株式会社 | Method for manufacturing semiconductor device |
JPH0645614A (en) * | 1992-07-27 | 1994-02-18 | Nec Corp | Manufacture of read-only semiconductor memory |
JPH07183409A (en) * | 1993-12-24 | 1995-07-21 | Seiko Epson Corp | Semiconductor device and manufacture thereof |
EP0751560B1 (en) * | 1995-06-30 | 2002-11-27 | STMicroelectronics S.r.l. | Process for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding IC |
DE69528970D1 (en) * | 1995-06-30 | 2003-01-09 | St Microelectronics Srl | Method of manufacturing a circuit containing non-volatile memory cells and edge transistors, and corresponding IC |
EP0811983A1 (en) * | 1996-06-06 | 1997-12-10 | STMicroelectronics S.r.l. | Flash memory cell, electronic device comprising such a cell, and relative fabrication method |
US5723355A (en) * | 1997-01-17 | 1998-03-03 | Programmable Microelectronics Corp. | Method to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memory |
KR100277873B1 (en) * | 1998-12-01 | 2001-01-15 | 김영환 | Manufacturing Method of Semiconductor Device |
-
1999
- 1999-11-29 EP EP99830742A patent/EP1104022A1/en not_active Withdrawn
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2000
- 2000-11-29 US US09/727,266 patent/US6319780B2/en not_active Expired - Lifetime
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EP1104022A1 (en) | 2001-05-30 |
US6319780B2 (en) | 2001-11-20 |
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