US20010006833A1 - Method for fabricating a capacitor for a semiconductor device - Google Patents
Method for fabricating a capacitor for a semiconductor device Download PDFInfo
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- US20010006833A1 US20010006833A1 US09/742,221 US74222100A US2001006833A1 US 20010006833 A1 US20010006833 A1 US 20010006833A1 US 74222100 A US74222100 A US 74222100A US 2001006833 A1 US2001006833 A1 US 2001006833A1
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000003990 capacitor Substances 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000007669 thermal treatment Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010936 titanium Substances 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 19
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 238000005108 dry cleaning Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 101150051314 tin-10 gene Proteins 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 54
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 12
- 229910001936 tantalum oxide Inorganic materials 0.000 description 12
- 229910052715 tantalum Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000011066 ex-situ storage Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000004148 unit process Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
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- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
Definitions
- the present invention relates to a method for fabricating a capacitor for a semiconductor device, and more particularly, to a method for fabricating capacitors that exhibit both improved electrical properties and sufficient capacitance required for advanced semiconductor devices.
- Tantalum oxide films have a non-uniform and unstable stoichiometry that generates vacancy Ta atoms as a result of variations in the composition ratio between tantalum and oxide atoms in the thin film.
- vacancy Ta atoms in the form of oxygen vacancies are always present in the tantalum oxide film because of its unstable chemical composition.
- the number of oxygen vacancies within the tantalum oxide film may be varied somewhat depending on the actual composition and the bonding degrees of the incorporated elements, there is presently no technique or method that will completely eliminate the oxygen vacancies. As a result, a special oxidation process intended to more completely oxidize the tantalum atoms in the thin film is required to stabilize the stoichiometry and thereby prevent generating a leakage current. Additionally, the tantalum oxide film is highly reactive with both polysilicon (oxide film electrode) and titanium nitride (metal electrode), two materials commonly used to form the upper and lower electrodes of a capacitor. As a result, oxygen present in the tantalum oxide thin film may react with the electrode materials, thereby forming a low dielectric oxide layer at the interface and degrading the uniformity and electrical properties of the resulting capacitor.
- a primary object of the present invention is to provide a method for fabricating a semiconductor device that incorporates a dielectric film having excellent electrical properties.
- Another object of the present invention is to provide a method for fabricating a capacitor for a semiconductor device that has sufficient capacitance for the operation of the high integration semiconductor device, by using a dielectric film having a high dielectric constant.
- Still another object of the present invention is to provide a method for fabricating a capacitor for a semiconductor device that can reduce production costs by both decreasing the number of necessary unit process steps and reducing the overall unit processing time.
- the present invention provides a method for fabricating a capacitor for a semiconductor device comprising the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming an amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film on the lower electrode; and forming an upper electrode on the amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film.
- a method for fabricating a capacitor for a semiconductor device comprising the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming an amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film on the lower electrode; performing a thermal treatment on the amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film; and forming an upper electrode on the amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film.
- a method for fabricating a capacitor for a semiconductor device comprising the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming a (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x dielectric film on the lower electrode; performing a thermal treatment on the (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x dielectric film; and forming an upper electrode on the (Ta 2 O 5 ) 1 ⁇ -(TiO 2 ) x dielectric film.
- FIGS. 1 to 3 are cross-sectional views illustrating certain of the sequential steps in fabricating a capacitor for a semiconductor device in accordance with the present invention.
- an interlayer insulating film 12 is formed at the upper portion of a semiconductor substrate 11 where a gate (not shown), a source (not shown), a drain (not shown) and a bit line (not shown) have previously been formed.
- a contact opening (not shown) is then formed to expose a predetermined lower electrode contact region of the semiconductor substrate 11 by selectively removing a region of the interlayer insulating film 12 .
- a first conductive film (not shown) is then formed on the upper portion of the interlayer insulating film 12 and in the contact opening. This first conductive film, preferably doped polysilicon, is then patterned and etched according to known photolithography and etch processes to form a lower electrode 13 .
- a dielectric film is formed by depositing an amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film 14 with 0 ⁇ 0.5 over the entire structure using a low pressure chemical vapor deposition (LPCVD) process.
- This LPCVD process preferably employs two organic metal compounds, tantalum ethylate (Ta(OC 2 H 5 ) 5 ) and titanium isopropylate (Ti[OCH(CH 3 ) 2 ] 4 ), as the metal sources for the (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film.
- a wet cleaning process using a HF solution, or a dry cleaning process using a HF vapor, either in-situ or ex-situ, before depositing the amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film 14 .
- a solution of an addition compound such as Na 4 OH or H 2 SO 4 may be used to improve uniformity.
- the amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film 14 is the product of a series of chemical reactions at or near the surface of the wafer in the LPCVD chamber at a temperature of between 300 and 600° C.
- the LPCVD deposition is continued until the (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film 14 has reached a predetermined thickness, preferably less than 100 ⁇ .
- the Ta chemical vapor is obtained by supplying an organic tantalum precursor compound, preferably a Ta(OC 2 H 5 ) 5 solution, into an evaporator or evaporation tube at predetermined rate that is typically less than 300 mg/minute.
- the evaporator or evaporation tube is generally maintained at a temperature typically between 150 and 250° C. and the feed rate is typically controlled with a mass flow controller (MFC).
- MFC mass flow controller
- the evaporated solution is then fed into the LPCVD chamber.
- the Ti chemical vapor is obtained in a similar fashion by supplying one or more organic titanium precursor compounds, preferably Ti[OCH(CH 3 ) 2 ] 4 , titanium tetrachloride (TiCl 4 ), tetrakis-dimethylamido-Ti (TDMAT), or tetrakis-diethylamodo-Ti (TDEAT) to an evaporator or evaporation tube at a predetermined rate, typically less than 300 mg/minute.
- organic titanium precursor compounds preferably Ti[OCH(CH 3 ) 2 ] 4 , titanium tetrachloride (TiCl 4 ), tetrakis-dimethylamido-Ti (TDMAT), or
- the evaporator or evaporation tube is preferably maintained at a temperature above 150° C., and more preferably, a temperature ranging between 200 and 300° C.
- the Ti chemical vapor is then fed, either in combination with the Ta chemical vapor or via separate inlets, into the LPCVD chamber.
- the complete supply path between the evaporator and the LPCVD chamber, including any orifice, nozzle, or supply tube should be maintained at a temperature of at least 150° C., and preferably a temperature between 150 and 300° C.
- the Ta and Ti chemical vapors and an additional reaction gas then react in the LPCVD chamber to form the amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film.
- the feed ratio of the Ta and Ti chemical vapors may be adjusted to obtain a Ti:Ta mole ratio between 0.01 and 1.0.
- the reaction gas typically O 2 or N 2 O gas
- the reaction gas will generally be fed into the LPCVD chamber at a rate of between 5 and 500 sccm during formation of the amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film 14 .
- An excess of the reaction gas, either O 2 or N 2 O also serves to avoid both the formation of carbon impurities and the presence of vacancy Ta or Ti atoms in the thin film.
- a low temperature thermal treatment may be carried out at a temperature below 600° C. in an atmosphere of O 2 or N 2 O with a flow rate of 5 to 500 sccm after the deposition of the amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film 14 .
- the low temperature thermal treatment is preferably performed by using UV-O 3 , or N 2 O or O 2 plasma, at a temperature ranging from 300 to 600° C. after the deposition of the amorphous (Ta 2 O 5 ) 1 ⁇ x -(TiO 2 ) x film 14 .
- a second conductive film 15 that will be used to form an upper electrode is formed over the entire structure.
- This second conductive film 15 may comprise a doped polysilicon film, a TiN film, or a metal substance selected from the group consisting of TaN, W, WN, WSi, Ru, RuO 2 , Ir, IrO 2 and Pt.
- the upper electrode may also comprise a multilayer structure including both a TiN layer and a doped polysilicon layer.
- the method for fabricating the capacitor for the semiconductor device in accordance with the present invention has the following advantages.
- the capacitor of the present invention also exhibits improved resistance to electrostatic discharge (ESD) induced damage and thus provides superior electrical properties when compared with conventional capacitors. Moreover, the present invention prevents the oxygen vacancy and leakage current resulting from the unstable stoichiometry (Ta x Oy) and carbon impurities in the conventional capacitor relying on only a tantalum oxide film as the dielectric.
- ESD electrostatic discharge
- a capacitor constructed in accordance with the present invention provides a controlled dielectric that is equivalent to a oxide film of less than 20 ⁇ .
- a capacitor according to the present invention thus provides a capacitance of over 25 fF per cell and improved electrical properties even at the level of integration necessary to support DRAMs of over 256M.
- the present invention does not require a complicated capacitor module having complex three-dimensional structures such as a step, cylinder, or fin electrode for increasing the effective electrode area.
- the capacitor is fabricated using the amorphous (Ta 2 O 5 ) 1 ⁇ -(TiO 2 ) x film as the dielectric film rather than the conventional tantalum oxide dielectric film, the ex-situ RTN process before the deposition of the tantalum oxide film, as well as the subsequent low temperature oxidation process and high temperature thermal treatment, may be eliminated.
- the number of unit processes is decreased and the corresponding unit processing time is reduced, thereby reducing production costs by as much as 30% or more.
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Abstract
Description
- 1. Field of the Invention
- The present invention relates to a method for fabricating a capacitor for a semiconductor device, and more particularly, to a method for fabricating capacitors that exhibit both improved electrical properties and sufficient capacitance required for advanced semiconductor devices.
- 2. Description of the Background Art
- Recently, the degree of integration of memory products has been increased through the application of improved semiconductor processing techniques for producing increasingly smaller device structures. Accordingly, the unit cell area has decreased remarkably and the use of lower operating voltages has increased. Despite the decrease in the size of the cell area, however, the capacitance required to operate memory devices without generating soft errors and reducing refresh times has remained on the order of25 fF per cell. As a result, DRAM capacitor designs using a nitride-oxide (NO) structure as the dielectric film it has typically been necessary to utilize a three-dimensional electrode structure and/or a hemispherical grain surface (HSG) to obtain the necessary capacitance values. The three-dimensional electrode structures increase the effective surface area of the capacitors by increasing the height and vertical surface area of the electrode.
- However, increasing the height of the capacitor electrode structures also complicates subsequent process steps, particularly with regard to photolithography and etch processes. As the height of the capacitor increases, the depth of focus and dimension control that can be obtained during subsequent photolithography processes may be insufficient to accurately reproduce the necessary patterns. This difficulty is the result of the height differences between cell regions and peripheral circuit regions, height differences that can adversely affect subsequent integration processes, particularly after interconnection processes and at increased degrees of integration.
- It is difficult, therefore, to construct a DRAM capacitor using a conventional NO dielectric film that has sufficient capacitance to support DRAMs designs having 256M or more cells.
- In order to overcome some of the disadvantages of the conventional dielectric materials, capacitors using a tantalum oxide film as the dielectric film have been developed. Tantalum oxide films, however, have a non-uniform and unstable stoichiometry that generates vacancy Ta atoms as a result of variations in the composition ratio between tantalum and oxide atoms in the thin film. Thus vacancy Ta atoms in the form of oxygen vacancies are always present in the tantalum oxide film because of its unstable chemical composition.
- Although the number of oxygen vacancies within the tantalum oxide film may be varied somewhat depending on the actual composition and the bonding degrees of the incorporated elements, there is presently no technique or method that will completely eliminate the oxygen vacancies. As a result, a special oxidation process intended to more completely oxidize the tantalum atoms in the thin film is required to stabilize the stoichiometry and thereby prevent generating a leakage current. Additionally, the tantalum oxide film is highly reactive with both polysilicon (oxide film electrode) and titanium nitride (metal electrode), two materials commonly used to form the upper and lower electrodes of a capacitor. As a result, oxygen present in the tantalum oxide thin film may react with the electrode materials, thereby forming a low dielectric oxide layer at the interface and degrading the uniformity and electrical properties of the resulting capacitor.
- In addition, during the formation of the tantalum oxide thin film, carbon (C), carbon compounds (such as CH4 and C2H4) and water vapor (H2O) are typically produced by the reaction between the organic tantalum source, frequently Ta(OC2H5)5, other reaction gases such as O2 or N2O. These impurities can, in turn, be incorporated into the resulting tantalum oxide film. These impurities, as well as other ions, free radicals, and oxygen vacancies, will tend to increase the leakage current and degrade the dielectric properties of the resulting capacitor.
- Accordingly, a primary object of the present invention is to provide a method for fabricating a semiconductor device that incorporates a dielectric film having excellent electrical properties.
- Another object of the present invention is to provide a method for fabricating a capacitor for a semiconductor device that has sufficient capacitance for the operation of the high integration semiconductor device, by using a dielectric film having a high dielectric constant.
- Still another object of the present invention is to provide a method for fabricating a capacitor for a semiconductor device that can reduce production costs by both decreasing the number of necessary unit process steps and reducing the overall unit processing time.
- In order to achieve the above-described objects, the present invention provides a method for fabricating a capacitor for a semiconductor device comprising the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming an amorphous (Ta2O5)1−x-(TiO2)x film on the lower electrode; and forming an upper electrode on the amorphous (Ta2O5)1−x-(TiO2)x film.
- There is also provided a method for fabricating a capacitor for a semiconductor device, comprising the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming an amorphous (Ta2O5)1−x-(TiO2)x film on the lower electrode; performing a thermal treatment on the amorphous (Ta2O5)1−x-(TiO2)x film; and forming an upper electrode on the amorphous (Ta2O5)1−x-(TiO2)x film.
- In addition, there is provided a method for fabricating a capacitor for a semiconductor device, comprising the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming a (Ta2O5)1−x-(TiO2)x dielectric film on the lower electrode; performing a thermal treatment on the (Ta2O5)1−x-(TiO2)x dielectric film; and forming an upper electrode on the (Ta2O5)1−-(TiO2)x dielectric film.
- The present invention will become better understood in light of the following detailed description and the accompanying figures. The figures are provided by way of illustration only and are not intended to limit the scope of the invention.
- FIGS.1 to 3 are cross-sectional views illustrating certain of the sequential steps in fabricating a capacitor for a semiconductor device in accordance with the present invention.
- A method for fabricating a capacitor for a semiconductor device in accordance with the present invention will now be described in detail and through reference to the accompanying figures.
- As shown in FIG. 1, an interlayer
insulating film 12 is formed at the upper portion of asemiconductor substrate 11 where a gate (not shown), a source (not shown), a drain (not shown) and a bit line (not shown) have previously been formed. A contact opening (not shown) is then formed to expose a predetermined lower electrode contact region of thesemiconductor substrate 11 by selectively removing a region of theinterlayer insulating film 12. A first conductive film (not shown) is then formed on the upper portion of theinterlayer insulating film 12 and in the contact opening. This first conductive film, preferably doped polysilicon, is then patterned and etched according to known photolithography and etch processes to form alower electrode 13. - Referring to FIG. 2, a dielectric film is formed by depositing an amorphous (Ta2O5)1−x-(TiO2)x
film 14 with 0≦×≦0.5 over the entire structure using a low pressure chemical vapor deposition (LPCVD) process. This LPCVD process preferably employs two organic metal compounds, tantalum ethylate (Ta(OC2H5)5) and titanium isopropylate (Ti[OCH(CH3)2]4), as the metal sources for the (Ta2O5)1−x-(TiO2)x film. In order to remove any natural oxide film or other impurity present on the surface of thelower electrode 13, it is preferable to perform a wet cleaning process using a HF solution, or a dry cleaning process using a HF vapor, either in-situ or ex-situ, before depositing the amorphous (Ta2O5)1−x-(TiO2)xfilm 14. In addition to the wet HF cleaning process, a solution of an addition compound such as Na4OH or H2SO4 may be used to improve uniformity. - The amorphous (Ta2O5)1−x-(TiO2)x
film 14 is the product of a series of chemical reactions at or near the surface of the wafer in the LPCVD chamber at a temperature of between 300 and 600° C. The LPCVD deposition is continued until the (Ta2O5)1−x-(TiO2)xfilm 14 has reached a predetermined thickness, preferably less than 100 Å. The Ta chemical vapor is obtained by supplying an organic tantalum precursor compound, preferably a Ta(OC2H5)5 solution, into an evaporator or evaporation tube at predetermined rate that is typically less than 300 mg/minute. The evaporator or evaporation tube is generally maintained at a temperature typically between 150 and 250° C. and the feed rate is typically controlled with a mass flow controller (MFC). The evaporated solution is then fed into the LPCVD chamber. The Ti chemical vapor is obtained in a similar fashion by supplying one or more organic titanium precursor compounds, preferably Ti[OCH(CH3)2]4, titanium tetrachloride (TiCl4), tetrakis-dimethylamido-Ti (TDMAT), or tetrakis-diethylamodo-Ti (TDEAT) to an evaporator or evaporation tube at a predetermined rate, typically less than 300 mg/minute. The evaporator or evaporation tube is preferably maintained at a temperature above 150° C., and more preferably, a temperature ranging between 200 and 300° C. The Ti chemical vapor is then fed, either in combination with the Ta chemical vapor or via separate inlets, into the LPCVD chamber. - In order to prevent condensation of the organic metal compound vapors, the complete supply path between the evaporator and the LPCVD chamber, including any orifice, nozzle, or supply tube should be maintained at a temperature of at least 150° C., and preferably a temperature between 150 and 300° C.
- The Ta and Ti chemical vapors and an additional reaction gas then react in the LPCVD chamber to form the amorphous (Ta2O5)1−x-(TiO2)x film. The feed ratio of the Ta and Ti chemical vapors may be adjusted to obtain a Ti:Ta mole ratio between 0.01 and 1.0. With feed rates of both the Ta and Ti chemical vapors below 300 mg/minute, the reaction gas, typically O2 or N2O gas, will generally be fed into the LPCVD chamber at a rate of between 5 and 500 sccm during formation of the amorphous (Ta2O5)1−x-(TiO2)x
film 14. An excess of the reaction gas, either O2 or N2O, also serves to avoid both the formation of carbon impurities and the presence of vacancy Ta or Ti atoms in the thin film. - In addition, to improve a quality of the amorphous (Ta2O5)1−x(TiO2)x
film 14 and remove pin holes or micro cracks in the film, a low temperature thermal treatment may be carried out at a temperature below 600° C. in an atmosphere of O2 or N2O with a flow rate of 5 to 500 sccm after the deposition of the amorphous (Ta2O5)1−x-(TiO2)xfilm 14. - On the other hand, in order to efficiently oxidize the minor amounts of vacancy Ta or Ti atoms and carbon impurities that remain in the thin film, and to enhance the bonding force, the low temperature thermal treatment is preferably performed by using UV-O3, or N2O or O2 plasma, at a temperature ranging from 300 to 600° C. after the deposition of the amorphous (Ta2O5)1−x-(TiO2)x
film 14. - As shown in FIG. 3, a second
conductive film 15 that will be used to form an upper electrode is formed over the entire structure. This secondconductive film 15 may comprise a doped polysilicon film, a TiN film, or a metal substance selected from the group consisting of TaN, W, WN, WSi, Ru, RuO2, Ir, IrO2 and Pt. The upper electrode may also comprise a multilayer structure including both a TiN layer and a doped polysilicon layer. - As discussed earlier, the method for fabricating the capacitor for the semiconductor device in accordance with the present invention has the following advantages.
- Utilizing the amorphous (Ta2O5)1−x-(TiO2)x film (with a dielectric constant ε of between approximately 30 and 50) as the dielectric film for the capacitor provides a significantly higher dielectric constant than that available from a conventional NO film (ε=4˜5). Further, the titanium oxide film, with its tetragonal system structure, is more stable than the conventional tantalum oxide film (ε=25˜27) and is covalently bound in the structure of the amorphous (Ta2O5)1−x-(TiO2)x film, thereby providing enhanced mechanical and electrical strength. The capacitor of the present invention also exhibits improved resistance to electrostatic discharge (ESD) induced damage and thus provides superior electrical properties when compared with conventional capacitors. Moreover, the present invention prevents the oxygen vacancy and leakage current resulting from the unstable stoichiometry (TaxOy) and carbon impurities in the conventional capacitor relying on only a tantalum oxide film as the dielectric.
- As a result, a capacitor constructed in accordance with the present invention provides a controlled dielectric that is equivalent to a oxide film of less than 20 Å. A capacitor according to the present invention thus provides a capacitance of over 25 fF per cell and improved electrical properties even at the level of integration necessary to support DRAMs of over 256M.
- Therefore, the present invention does not require a complicated capacitor module having complex three-dimensional structures such as a step, cylinder, or fin electrode for increasing the effective electrode area. Especially, when the capacitor is fabricated using the amorphous (Ta2O5)1−-(TiO2)x film as the dielectric film rather than the conventional tantalum oxide dielectric film, the ex-situ RTN process before the deposition of the tantalum oxide film, as well as the subsequent low temperature oxidation process and high temperature thermal treatment, may be eliminated. As a result, as compared with the conventional method, the number of unit processes is decreased and the corresponding unit processing time is reduced, thereby reducing production costs by as much as 30% or more.
- Because the present invention may be practiced in several forms without departing from the spirit or essential characteristics thereof, it should also be understood that the invention is not, unless otherwise indicated, limited to the specific details of the foregoing descriptions. The present invention should be construed broadly within the spirit and scope as defined in the appended claims.
Claims (20)
Applications Claiming Priority (2)
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KR10-1999-0060558A KR100494322B1 (en) | 1999-12-22 | 1999-12-22 | Method of manufacturing a capacitor in a semiconductor device |
KR1999-60558 | 1999-12-22 |
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US20010006833A1 true US20010006833A1 (en) | 2001-07-05 |
US6352865B2 US6352865B2 (en) | 2002-03-05 |
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US (1) | US6352865B2 (en) |
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EP1452619A1 (en) * | 2001-10-02 | 2004-09-01 | Advanced Systems of Technology Incubation | Thin metal oxide film and process for producing the same |
US20070085166A1 (en) * | 2005-10-19 | 2007-04-19 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board with film capacitor embedded therein and method for manufacturing the same |
US20070102741A1 (en) * | 2005-11-07 | 2007-05-10 | Samsung Electro-Mechanics Co., Ltd. | Thin film capacitor-embedded printed circuit board and method of manufacturing the same |
US20100213574A1 (en) * | 2004-08-31 | 2010-08-26 | Micron Technology, Inc. | High dielectric constant transition metal oxide materials |
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-
1999
- 1999-12-22 KR KR10-1999-0060558A patent/KR100494322B1/en not_active IP Right Cessation
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2000
- 2000-12-19 TW TW089127185A patent/TW466676B/en not_active IP Right Cessation
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EP1452619A1 (en) * | 2001-10-02 | 2004-09-01 | Advanced Systems of Technology Incubation | Thin metal oxide film and process for producing the same |
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KR20010063474A (en) | 2001-07-09 |
KR100494322B1 (en) | 2005-06-10 |
US6352865B2 (en) | 2002-03-05 |
JP2001223346A (en) | 2001-08-17 |
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