US20010003579A1 - Process for the reduction of copper oxide - Google Patents

Process for the reduction of copper oxide Download PDF

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Publication number
US20010003579A1
US20010003579A1 US09/075,599 US7559998A US2001003579A1 US 20010003579 A1 US20010003579 A1 US 20010003579A1 US 7559998 A US7559998 A US 7559998A US 2001003579 A1 US2001003579 A1 US 2001003579A1
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approximately
borane
range
reducing agent
oxide
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US09/075,599
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Joseph A. Corella Ii
Kevin M. Neigh
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MSA Safety Inc
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Assigned to MINE SAFETY APPLIANCES COMPANY reassignment MINE SAFETY APPLIANCES COMPANY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CORELLA, JOSEPH A., II, NEIGH, KEVIN M.
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/385Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by conversion of the surface of the metal, e.g. by oxidation, whether or not followed by reaction or removal of the converted layer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00Compounds of copper
    • C01G3/02Oxides; Hydroxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/60Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using alkaline aqueous solutions with pH greater than 8
    • C23C22/63Treatment of copper or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/82After-treatment
    • C23C22/83Chemical after-treatment
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/60Optical properties, e.g. expressed in CIELAB-values
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03Metal processing
    • H05K2203/0315Oxidising metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1157Using means for chemical reduction

Definitions

  • the present invention relates to a method for the reduction of copper oxide, and, particularly, to a method for reducing copper oxide to improve acid resistance.
  • DMAB dimethylamine borane
  • the present invention provides a method of treating copper oxide comprising the step of reacting the cupric oxide with a reducing agent selected from the group consisting of morpholine borane (C 4 H 12 BNO), ethylene diamine borane (H 2 NCH 2 CH 2 NH 2 .BH 3 ), ethylene diamine bisborane (H 2 NCH 2 CH 2 NH 2 .2BH 3 ), t-butylamine borane ((CH 3 ) 3 CNH 2 .BH 3 ), piperazine borane (C 4 H 10 N 2 .BH 3 ), imidazole borane (C 3 H 4 N 2 .BH 3 ) and methoxyethylamine borane (C 3 H 9 NO.BH 3 ).
  • the reducing agent is morpholine borane.
  • the reducing agents of the present invention have been discovered to provide a number of significant advantages over the various reducing agents currently used in the reduction of cupric oxide to cuprous oxide, and particularly over DMAB.
  • the thermal stabilities of the reducing agents of the present invention are much better than current reducing agents.
  • the reducing agents of the present invention can also react at a very broad temperature range without thermal decomposition.
  • the reaction temperature is in the range of approximately 3° C. to approximately 95° C. Reaction at elevated temperatures using the reducing agents of the present invention may decrease the process time over current procedures.
  • reducing agents of the present invention are relatively odor free, making handling thereof less noxious.
  • the pH value of the aqueous solutions of the reducing agents of the present invention can range from approximately 4 to approximately 14. Preferably, the pH ranges from approximately 7 to approximately 13.
  • the concentration range of the reducing agent in the reaction solution is preferably in the range of 0.1 wt % to the solubility limit of the reducing agent in the solvent. More preferably, the concentration range of the reducing agent in the reaction solution is in the range of 0.3 wt % to the solubility limit of the reducing agent in the solvent.
  • wt % is defined as follows: weight ⁇ ⁇ of ⁇ ⁇ reducing ⁇ ⁇ agent ( weight ⁇ ⁇ of ⁇ ⁇ reducing ⁇ ⁇ agent + weight ⁇ ⁇ of ⁇ ⁇ solvent ) ⁇ 100 ⁇ ⁇ %
  • Copper oxide (cupric oxide) was formed on copper test coupons via well known methods described in the literature or through the use of commercial pre-formulated solutions.
  • the weight gain of the oxide coating was typically in the range of approximately 0.30 to 0.50 mg/cm 2 .
  • the process cycle included an alkaline soak, water rinse, neutralization, water rinse, sodium hydroxide treatment, and copper oxide treatment.
  • the copper oxide immersion time ranged from 4 to 6 minutes at approximately 160 to 170° F.
  • Aqueous solutions of the reducing agents of the present invention and deionized water were prepared in a concentration ranging from approximately 1 g/L (1 gram/liter of solution or 0.1 wt %) and higher.
  • the concentration of reducing agent was in the range of approximately 0.1 wt % to the solubility limit of the reducing agent.
  • the concentration of the reducing agent is more preferably in the range of approximately 1 to approximately 20 gm/L (that is, approximately 0.1 wt % to approximately 2.0 wt %).
  • the pH of the solution is in the range of approximately 5 to approximately 13. More preferably, the pH of the solution is in the range of approximately 7 to approximately 13.
  • the pH of the solution was adjusted with sodium hydroxide.
  • the reaction temperature is preferably in the range of approximately 3° C. to approximately 95° C. More preferably, the reaction temperature is in the range of approximately 20° C. to approximately 50° C.
  • a number of protic solvents other than water including alcohols (for example, methanol) are suitable for the reactions of the present invention.
  • cupric oxide coated test coupons were immersed in a reducing agent solution as described above. Vigorous bubbling occurred rapidly upon contact with the reducing agent solution. The test coupons were typically immersed for approximately 3 to 10 minutes. The coupon surface was observed to change color from the “black” oxide coating to a uniform brown appearance, indicating the reduction of cupric oxide to cuprous oxide. Subsequent to the reducing reaction, the coupons were rinsed and immersed in 3 molar HCL. The color of the coupon remained the same, indicating it was completely resistant to the aqueous acid solution.
  • Table 1 A summary of the results of several experiments performed with morpholine borane over a range of conditions are set forth in Table 1 below.

Abstract

The present invention provides a method of reducing copper oxide to improve its acid resistance comprising the step of reacting cupric oxide with a reducing agent selected from the group consisting of morpholine borane, ethylene diamine borane, ethylene diamine bisborane, t-butylamine borane, piperazine borane, imidazole borane, and methoxyethylamine borane to form cuprous oxide.

Description

    FIELD OF THE INVENTION
  • The present invention relates to a method for the reduction of copper oxide, and, particularly, to a method for reducing copper oxide to improve acid resistance. [0001]
  • BACKGROUND OF THE INVENTION
  • A variety of methods have been investigated concerning the surface treatment of copper before bonding a resin to the copper. Under some methods, the surface of a copper printed circuit was chemically treated or polished to form a suitable extent of microscopic irregularities as a pretreatment prior to solder resist printing to improve the bonding strength between the solder resist and the copper circuit. In such treatments, however, there was a problem of copper migration generating electrolytic corrosion deposits, often in the form of dendrites, which results in reduction of the intracircuit spacing. This problem, in turn, led to reduced intracircuit insulation resistance. [0002]
  • Because sufficient bonding strength between a metal and a resin generally cannot be secured by directly bonding the resin onto the smooth and even surface of the metal, an oxide layer is often formed on the surface of the metal to improve the bonding strength. Accordingly, investigations have been made on a copper surface treatment method in which an oxide layer of cupric oxide (CuO), cuprous oxide (Cu[0003] 2O), or the like is formed on the surface of copper to improve its bonding strength. Unfortunately, some metallic oxides are readily hydrolyzed upon contact with an aqueous acidic solution and become dissolved therein as metallic ions.
  • A number of studies have shown, however, that acid resistance is improved by first forming cupric oxide on the surface of the copper and subsequently reducing the cupric oxide to cuprous oxide. In general, cuprous oxide is less soluble in an acid than cupric oxide. A number of methods of reducing cupric oxide to cuprous oxide have been developed. In U.S. Pat. No. 4,642,161, for example, a solution containing at least one reducing agent represented by the general formula BH[0004] 3NHRR′, wherein R and R″ are each selected from the group consisting of H, CH3 and CH2CH3, is used to reduce cupric oxide. The most commonly practiced method of reducing cupric oxide to form cuprous oxide, however, is by use of the reducing agent dimethylamine borane (DMAB), which has the formula (CH3)2NH.BH3. See Japanese Patent Application No. 1 219,483 (1989).
  • Unfortunately, current methods for the reduction of cupric oxide to form cuprous oxide suffer from a number of significant drawbacks. In general, DMAB and other reducing agents for such a reaction exhibit poor thermal stability and decompose rapidly whenever their temperature reaches a level of approximately 40° C. to 50° C. Moreover, these compounds are often very noxious. Further, the pH for reduction reactions with such compounds typically must be maintained in the limited range of 12 to 13 to prevent hydrolysis of the reducing agent. [0005]
  • It is, therefore, very desirable to develop a method of reducing cupric oxide to form cuprous oxide which reduces or eliminates these and other drawbacks associated with current methods. [0006]
  • SUMMARY OF THE INVENTION
  • In general, the present invention provides a method of treating copper oxide comprising the step of reacting the cupric oxide with a reducing agent selected from the group consisting of morpholine borane (C[0007] 4H12BNO), ethylene diamine borane (H2NCH2CH2NH2.BH3), ethylene diamine bisborane (H2NCH2CH2NH2.2BH3), t-butylamine borane ((CH3)3CNH2.BH3), piperazine borane (C4H10N2.BH3), imidazole borane (C3H4N2.BH3) and methoxyethylamine borane (C3H9NO.BH3). Most preferably, the reducing agent is morpholine borane.
  • The reducing agents of the present invention have been discovered to provide a number of significant advantages over the various reducing agents currently used in the reduction of cupric oxide to cuprous oxide, and particularly over DMAB. For example, the thermal stabilities of the reducing agents of the present invention are much better than current reducing agents. The reducing agents of the present invention can also react at a very broad temperature range without thermal decomposition. Preferably, the reaction temperature is in the range of approximately 3° C. to approximately 95° C. Reaction at elevated temperatures using the reducing agents of the present invention may decrease the process time over current procedures. [0008]
  • Moreover, reducing agents of the present invention are relatively odor free, making handling thereof less noxious. Likewise, the pH value of the aqueous solutions of the reducing agents of the present invention can range from approximately 4 to approximately 14. Preferably, the pH ranges from approximately 7 to approximately 13. The concentration range of the reducing agent in the reaction solution is preferably in the range of 0.1 wt % to the solubility limit of the reducing agent in the solvent. More preferably, the concentration range of the reducing agent in the reaction solution is in the range of 0.3 wt % to the solubility limit of the reducing agent in the solvent. As used herein, wt % is defined as follows: [0009] weight of reducing agent ( weight of reducing agent + weight of solvent ) × 100 %
    Figure US20010003579A1-20010614-M00001
  • DETAILED DESCRIPTION OF THE INVENTION
  • Copper oxide (cupric oxide) was formed on copper test coupons via well known methods described in the literature or through the use of commercial pre-formulated solutions. The weight gain of the oxide coating was typically in the range of approximately 0.30 to 0.50 mg/cm[0010] 2. The process cycle included an alkaline soak, water rinse, neutralization, water rinse, sodium hydroxide treatment, and copper oxide treatment. The copper oxide immersion time ranged from 4 to 6 minutes at approximately 160 to 170° F.
  • Aqueous solutions of the reducing agents of the present invention and deionized water were prepared in a concentration ranging from approximately 1 g/L (1 gram/liter of solution or 0.1 wt %) and higher. Preferably, the concentration of reducing agent was in the range of approximately 0.1 wt % to the solubility limit of the reducing agent. In the case of morpholine borane, the concentration of the reducing agent is more preferably in the range of approximately 1 to approximately 20 gm/L (that is, approximately 0.1 wt % to approximately 2.0 wt %). [0011]
  • Preferably, the pH of the solution is in the range of approximately 5 to approximately 13. More preferably, the pH of the solution is in the range of approximately 7 to approximately 13. The pH of the solution was adjusted with sodium hydroxide. The reaction temperature is preferably in the range of approximately 3° C. to approximately 95° C. More preferably, the reaction temperature is in the range of approximately 20° C. to approximately 50° C. A number of protic solvents other than water including alcohols (for example, methanol) are suitable for the reactions of the present invention. [0012]
  • During the reduction reaction, cupric oxide coated test coupons were immersed in a reducing agent solution as described above. Vigorous bubbling occurred rapidly upon contact with the reducing agent solution. The test coupons were typically immersed for approximately 3 to 10 minutes. The coupon surface was observed to change color from the “black” oxide coating to a uniform brown appearance, indicating the reduction of cupric oxide to cuprous oxide. Subsequent to the reducing reaction, the coupons were rinsed and immersed in 3 molar HCL. The color of the coupon remained the same, indicating it was completely resistant to the aqueous acid solution. A summary of the results of several experiments performed with morpholine borane over a range of conditions are set forth in Table 1 below. [0013]
    TABLE 1
    Concentration of Acid
    Morpholine Borane Temperature Resistant
    (gm/L H2O) (° C.) pH Coating
    80 25 7 yes
    80 25 13 yes
    80 32 7 yes
    80 32 13 yes
    10 25 7 yes
    10 25 13 yes
    10 32 7 yes
    10 32 13 yes
    10 25 4 yes
    10 50 4 yes
    10 50 14 yes
    10  4 7 yes
    10 50 7 yes
    10 90 7 yes
    10 24 4 yes
    10 25 14 yes
     3 25 7 yes
  • Table 2 below summarizes several studies performed on compounds other than morpholine borane. [0014]
    TABLE 2
    Conc. Temp. Acid
    Compound (wt %) (° C.) pH Resistance Appearance
    piperazine 1.0 23 7-8 Yes Medium
    borane brown oxide
    ethylenediamine 1.0 24 7-8 Yes Medium
    diamine borane brown oxide
    ethylenediamine 0.75 24 7-8 Yes Dark brown
    bisborane oxide
    imidazole borane 1.0 24 7-8 Yes Dark brown
    oxide
    methoxyethylamine 1.0 23 7-8 Yes Medium
    borane brown oxide
  • Although the present invention has been described in detail in connection with the above examples, it is to be understood that such detail is solely for that purpose and that variations can be made by those skilled in the art without departing from the spirit of the invention except as it may be limited by the following claims. [0015]

Claims (20)

What is claimed is:
1. A method of reducing copper oxide comprising the step of reacting the copper oxide with a reducing agent selected from the group consisting of morpholine borane, ethylene diamine borane, ethylene diamine bisborane, t-butylamine borane, piperazine borane, imidazole borane, and methoxyethylamine borane.
2. The method of
claim 1
wherein the reaction occurs in a solution of the reducing agent wherein the concentration of the reducing agent is in the range of approximately 0.1 wt % to the solubility limit of the reducing agent.
3. The method of
claim 2
wherein the concentration of the reducing agent is in the range of approximately 0.3 wt % to the solubility limit of the reducing agent.
4. The method of
claim 1
wherein the reaction occurs at temperature in the range of approximately 3° C. to approximately 95° C.
5. The method of
claim 4
wherein the reaction occurs at temperature in the range of approximately 20° C. to approximately 50° C.
6. The method of
claim 1
wherein the solvent comprises water and the pH of the solution is in the range of approximately 4 to approximately 14.
7. The method of
claim 6
wherein the pH of the solution is in the range of approximately 5 to approximately 13.
8. The method of
claim 7
wherein the pH of the solution is in the range of approximately 7 to approximately 13.
9. The method of
claim 2
wherein reducing agent is morpholine borane.
10. The method of
claim 9
wherein concentration of the morpholine borane is in the range of approximately 0.1 wt % to 2.0 wt %.
11. A method of reducing cupric oxide to cuprous oxide comprising the step of reacting the copper oxide with a reducing agent selected from the group consisting of morpholine borane, ethylene diamine borane, ethylene diamine bisborane, t-butylamine borane, piperazine borane, imidazole borane, and methoxyethylamine borane.
12. The method of
claim 11
wherein the reaction occurs in a solution of the reducing agent wherein the concentration of the reducing agent is in the range of approximately 0.1 wt % to the solubility limit of the reducing agent.
13. The method of
claim 12
wherein the concentration of the reducing agent is in the range of approximately 0.3 wt % to the solubility limit of the reducing agent.
14. The method of
claim 11
wherein the reaction occurs at temperature in the range of approximately 3° C. to approximately 95° C.
15. The method of
claim 14
wherein the reaction occurs at temperature in the range of approximately 20° C. to approximately 50° C.
16. The method of
claim 11
wherein the solvent comprises water and the pH of the solution is in the range of approximately 4 to approximately 14.
17. The method of
claim 16
wherein the pH of the solution is in the range of approximately 5 to approximately 13.
18. The method of
claim 17
wherein the pH of the solution is in the range of approximately 7 to approximately 13.
19. The method of
claim 12
wherein reducing agent is morpholine borane.
20. The method of
claim 19
wherein concentration of the morpholine borane is in the range of approximately 0.1 wt % to 2.0 wt %.
US09/075,599 1996-06-27 1998-05-11 Process for the reduction of copper oxide Abandoned US20010003579A1 (en)

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US09/075,599 US20010003579A1 (en) 1996-06-27 1998-05-11 Process for the reduction of copper oxide

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EP (1) EP0907763B1 (en)
JP (1) JP4212649B2 (en)
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AU (1) AU3399997A (en)
DE (1) DE69706173T2 (en)
WO (1) WO1997049841A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102351237A (en) * 2011-07-05 2012-02-15 宁波大学 Method for preparing nanometer copper oxide

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753309A (en) * 1995-12-19 1998-05-19 Surface Tek Specialty Products, Inc. Composition and method for reducing copper oxide to metallic copper
ATE256085T1 (en) * 1997-07-10 2003-12-15 Morton Int Inc METHOD FOR REDUCING COPPER OXIDE TO METALLIC COPPER
US6141870A (en) 1997-08-04 2000-11-07 Peter K. Trzyna Method for making electrical device
CA2254362C (en) * 1998-02-20 2004-06-01 John Fakler Composition and method for reducing copper oxide to metallic copper
US6794288B1 (en) 2003-05-05 2004-09-21 Blue29 Corporation Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation
JP5946827B2 (en) 2010-07-06 2016-07-06 イーサイオニック コーポレーション Method for manufacturing a printed wiring board
US9763336B2 (en) 2010-07-06 2017-09-12 Atotech Deutschland Gmbh Methods of treating metal surfaces and devices formed thereby

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JPS61176192A (en) * 1985-01-31 1986-08-07 株式会社日立製作所 Adhesion between copper and resin
US5059243A (en) * 1989-04-28 1991-10-22 International Business Machines Corporation Tetra aza ligand systems as complexing agents for electroless deposition of copper
JPH069309B2 (en) * 1989-09-22 1994-02-02 株式会社日立製作所 Printed circuit board, manufacturing method and manufacturing apparatus thereof
JPH0496293A (en) * 1990-08-03 1992-03-27 Risho Kogyo Co Ltd Manufacture of board for multilayer printed circuit
IT1256851B (en) * 1992-01-21 1995-12-27 PROCEDURE FOR PROMOTING ADHERENCE BETWEEN DIFFERENT LAYERS IN THE MANUFACTURE OF MULTILAYER PRINTED CIRCUITS. AND COMPOSITIONS FOR THE IMPLEMENTATION OF THIS PROCEDURE.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102351237A (en) * 2011-07-05 2012-02-15 宁波大学 Method for preparing nanometer copper oxide

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KR100357427B1 (en) 2003-01-15
WO1997049841A1 (en) 1997-12-31
DE69706173T2 (en) 2001-11-29
DE69706173D1 (en) 2001-09-20
EP0907763A1 (en) 1999-04-14
US5750087A (en) 1998-05-12
AU3399997A (en) 1998-01-14
US5750087B1 (en) 1999-12-14
KR20000016711A (en) 2000-03-25
EP0907763B1 (en) 2001-08-16
JP2000513410A (en) 2000-10-10

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AS Assignment

Owner name: MINE SAFETY APPLIANCES COMPANY, PENNSYLVANIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CORELLA, JOSEPH A., II;NEIGH, KEVIN M.;REEL/FRAME:009353/0346

Effective date: 19980511

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION