US1844925A - Electrolytic reduction of copper oxide surface of rectifiers - Google Patents
Electrolytic reduction of copper oxide surface of rectifiers Download PDFInfo
- Publication number
- US1844925A US1844925A US324501A US32450128A US1844925A US 1844925 A US1844925 A US 1844925A US 324501 A US324501 A US 324501A US 32450128 A US32450128 A US 32450128A US 1844925 A US1844925 A US 1844925A
- Authority
- US
- United States
- Prior art keywords
- copper
- oxidized
- rectifier
- oxide
- electrolyte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 title description 6
- 239000005751 Copper oxide Substances 0.000 title description 6
- 229910000431 copper oxide Inorganic materials 0.000 title description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 40
- 229910052802 copper Inorganic materials 0.000 description 40
- 239000010949 copper Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 31
- 239000003792 electrolyte Substances 0.000 description 23
- 239000010410 layer Substances 0.000 description 22
- 239000012212 insulator Substances 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 101100432135 Caenorhabditis elegans lap-2 gene Proteins 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 241001397173 Kali <angiosperm> Species 0.000 description 1
- YXLXNENXOJSQEI-UHFFFAOYSA-L Oxine-copper Chemical compound [Cu+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 YXLXNENXOJSQEI-UHFFFAOYSA-L 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
- H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
- H01L21/165—Reduction of the copper oxide, treatment of the oxide layer
Definitions
- - igure 1 is a perspective view showing an apparatus for electrolytically reducing the surface of anoxidized copper disc suitable for a contact rectifier unit;
- the method of preparing an oxidized copper rectifier which comprises applying a thin layer of electrolyte to the oxidized surface of the copper rectifier, immediately thereafter passing a current through said electrolyte to the oxidized surface of the copper oxide rectifier and then immediately evaporating the remaining electrolyte before it has time to penetrate to the copper.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Treatment Of Metals (AREA)
- Electrolytic Production Of Metals (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US324501A US1844925A (en) | 1928-12-07 | 1928-12-07 | Electrolytic reduction of copper oxide surface of rectifiers |
DES95174D DE506374C (de) | 1928-12-07 | 1929-11-26 | Vorrichtung zum oberflaechlichen Reduzieren der Oxydschicht von Metall-Oxyd-Gleichrichterplatten |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US324501A US1844925A (en) | 1928-12-07 | 1928-12-07 | Electrolytic reduction of copper oxide surface of rectifiers |
Publications (1)
Publication Number | Publication Date |
---|---|
US1844925A true US1844925A (en) | 1932-02-09 |
Family
ID=23263865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US324501A Expired - Lifetime US1844925A (en) | 1928-12-07 | 1928-12-07 | Electrolytic reduction of copper oxide surface of rectifiers |
Country Status (2)
Country | Link |
---|---|
US (1) | US1844925A (de) |
DE (1) | DE506374C (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2745798A (en) * | 1951-11-06 | 1956-05-15 | Batist R Haueisen | Method of coating metal surfaces |
US2755236A (en) * | 1953-06-15 | 1956-07-17 | Sprague Electric Co | Catalyst |
US3188240A (en) * | 1961-09-11 | 1965-06-08 | Northrop Corp | Copper oxide insulation layer for thermoelectric devices |
-
1928
- 1928-12-07 US US324501A patent/US1844925A/en not_active Expired - Lifetime
-
1929
- 1929-11-26 DE DES95174D patent/DE506374C/de not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2745798A (en) * | 1951-11-06 | 1956-05-15 | Batist R Haueisen | Method of coating metal surfaces |
US2755236A (en) * | 1953-06-15 | 1956-07-17 | Sprague Electric Co | Catalyst |
US3188240A (en) * | 1961-09-11 | 1965-06-08 | Northrop Corp | Copper oxide insulation layer for thermoelectric devices |
Also Published As
Publication number | Publication date |
---|---|
DE506374C (de) | 1930-09-04 |
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