US11201237B2 - Semiconductor with unified transistor structure and voltage regulator diode - Google Patents

Semiconductor with unified transistor structure and voltage regulator diode Download PDF

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US11201237B2
US11201237B2 US16/703,579 US201916703579A US11201237B2 US 11201237 B2 US11201237 B2 US 11201237B2 US 201916703579 A US201916703579 A US 201916703579A US 11201237 B2 US11201237 B2 US 11201237B2
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semiconductor device
voltage
regulator diode
diode
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Kentaro NASU
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Rohm Co Ltd
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Rohm Co Ltd
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    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
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    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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Definitions

  • the present invention relates to a semiconductor device that has a transistor structure and a voltage-regulator diode in a single chip.
  • Patent Document 1 Japanese Patent Application Publication No. 2012-154119
  • Patent Document 2 Japanese Patent Application Publication No. 2014-17701 each disclose a diode as such an IC-protecting element.
  • a consumption current of an IC tends to increase as a result of an increase in function of a sensor, a display for portable devices, a camera for portable devices, etc., that are controlled by the IC. Therefore, if a diode is used as an IC-protecting element, the chip size of the protecting element will be required to be made large in accordance with the consumption current of the IC, thus making it difficult to meet the demand of a reduction in size of devices.
  • a transistor can achieve low power consumption even if it is smaller in size than a diode, and hence has a potential as an alternative element of the diode.
  • it is difficult to develop the characteristics of reverse voltage prevention and overvoltage protection that are required to protect an IC.
  • An object of the present invention is to provide a semiconductor device that is produced by unifying a transistor and a voltage-regulator diode into a single-chip configuration and that is capable of achieving low power consumption and developing reverse voltage prevention and overvoltage protection with respect to an external device, such as an IC.
  • FIG. 1 is a schematic plan view of a semiconductor device according to one preferred embodiment of the present invention.
  • FIG. 2 is a schematic bottom view of the semiconductor device according to one preferred embodiment of the present invention.
  • FIG. 3 is a schematic plan view of a semiconductor element of FIG. 1 .
  • FIG. 4 is a view showing a cross section in a cutting plane along line IV-IV of FIG. 3 .
  • FIG. 5 is a schematic view to describe a planar shape of a voltage-regulator diode.
  • FIG. 6 is a view showing a part of a protection circuit to which the semiconductor device of FIG. 1 is connected.
  • FIG. 7 is a view to make a comparison between the power consumption of a MOSFET and that of a Schottky barrier diode (SBD).
  • SBD Schottky barrier diode
  • FIG. 8 is a view to describe a difference between the effective area of an outer peripheral diode and that of a pad diode.
  • FIG. 9 is a view to make a comparison between the power consumption of the outer peripheral diode and that of the pad diode.
  • FIG. 10A and FIG. 10B are views to describe a structural difference between a voltage-regulator diode and an ESD protection diode.
  • FIG. 11 is a view to describe the reduction effect of power consumption of a MOSFET in which a space for the outer peripheral diode has been reduced.
  • FIG. 12 is a view to make a comparison between the breakdown voltage of the voltage-regulator diode and that of the ESD protection diode.
  • FIG. 13 is a view showing another form of the semiconductor element of FIG. 4 .
  • FIG. 14 is a view showing another form of the semiconductor element of FIG. 4 .
  • FIG. 15 is a perspective view of a semiconductor device according to another preferred embodiment of the present invention.
  • FIG. 16 is a front view of the semiconductor device of FIG. 15 .
  • FIG. 17 is a back view of the semiconductor device of FIG. 15 .
  • FIG. 18 is a plan view of the semiconductor device of FIG. 15 .
  • FIG. 19 is a bottom view of the semiconductor device of FIG. 15 .
  • FIG. 20 is a right side view of the semiconductor device of FIG. 15 .
  • FIG. 21 is a left side view of the semiconductor device of FIG. 15 .
  • FIG. 22 is a view showing a cross section in a cutting plane along line XXII-XXII of FIG. 18 .
  • FIG. 23 is a view to make a comparison between the chip size of the semiconductor device of FIG. 15 and that of a semiconductor device according to a reference example.
  • a semiconductor device includes a semiconductor layer that has a transistor structure including a p type source region, a p type drain region, an n type body region between the p type source region and the p type drain region, and a gate electrode facing the n type body region and a voltage-regulator diode that is disposed at the semiconductor layer and that has an n type portion connected to the p type source region and a p type portion connected to the gate electrode, in which the transistor structure and the voltage-regulator diode are unified into a single-chip configuration.
  • the transistor structure of the semiconductor device includes a p channel type MISFET that induces a positive hole in an n type body region directly under a gate electrode and that is brought into an ON state either by applying a voltage that becomes negative with respect to a source to the gate electrode or by applying a positive voltage (a gate is set at a ground (0 V)) to the source.
  • a forward bias will be applied to a parasitic diode (a pn diode consisting of a pn junction portion of both the p type drain region and the n type body region) built into the transistor structure.
  • a parasitic diode a pn diode consisting of a pn junction portion of both the p type drain region and the n type body region
  • the current flow from the drain side to the source side brings the source into a positive electric potential with respect to the gate (i.e., the gate becomes negative with respect to the source), and, as a result, a positive hole is induced in the n type body region directly under the gate electrode, and the transistor reaches an ON state. Therefore, when the semiconductor device is used by being connected to an external device, such as IC, it is possible to pass a forward current through the transistor structure that has a smaller loss and that is lower in power consumption than a diode, and therefore it is possible to employ a small-sized chip. As a result, it is possible to achieve space-saving in electronic equipment or the like.
  • the voltage-regulator diode undergoes a Zener breakdown, and a reverse current flows to the gate side (ground potential side) through the voltage-regulator diode, and therefore it is possible to prevent a heavy electric current from flowing to the IC.
  • the semiconductor device according to one preferred embodiment of the present invention is used as a protecting element of an IC of electronic equipment or the like, it is possible to develop reverse voltage prevention and overvoltage protection with respect to an external device, such as IC, although its power consumption is low, and therefore it is possible to maintain a protective function as a protecting element.
  • the transistor structure and the voltage-regulator diode are unified into a single-chip configuration, and therefore it is possible to achieve more excellent space-saving than in a case in which these are mounted in equipment as different chips.
  • the semiconductor layer may include an active region including the transistor structure and an outer peripheral region surrounding the active region, and the voltage-regulator diode may include an outer peripheral diode disposed along the outer peripheral region.
  • the p type portion and the n type portion may be each formed in a shape surrounding the active region.
  • the pn junction portion of both the p type portion and the n type portion of the voltage-regulator diode has an integral structure that surrounds the active region, and therefore it is possible to further reduce a loss in the voltage-regulator diode.
  • the p type portion and the n type portion may each have a width equal to each other.
  • the n type portion in the outer peripheral diode, may be disposed at a more inward side than the p type portion.
  • the voltage-regulator diode may be made of polysilicon stacked on the semiconductor layer.
  • the voltage-regulator diode is made of polysilicon that is general as material for the gate electrode, and, as a result, it is possible to form the gate electrode and the voltage-regulator diode in the same process step.
  • the transistor structure may include a trench gate structure made of polysilicon as the gate electrode embedded in a gate trench which is formed at the semiconductor layer.
  • the voltage-regulator diode may be made of an impurity region disposed in the semiconductor layer.
  • a breakdown voltage of the voltage-regulator diode may be 8 V or less.
  • the semiconductor device may have a length-breadth chip size of 0.6 mm ⁇ 0.4 mm or less.
  • the semiconductor device has this size, it is possible to reduce the size of electronic equipment in which the semiconductor device is mounted.
  • FIG. 1 is a schematic plan view of a semiconductor device 1 according to one preferred embodiment of the present invention.
  • FIG. 2 is a schematic bottom view of the semiconductor device 1 according to one preferred embodiment of the present invention.
  • the inside of a package is depicted in a see-through state so that the structure of the semiconductor device 1 can be easily understood.
  • the semiconductor device 1 is arranged as a comparatively small-sized semiconductor device that is capable of employing a so-called surface mount technology.
  • the size L in the longitudinal direction is about 0.6 mm
  • the size W in the width direction is about 0.4 mm
  • the size in the thickness direction is about 0.36 mm.
  • the semiconductor device 1 includes a semiconductor element 2 , a main lead 3 , a first sub-lead 4 , a second sub-lead 5 , a first wire 6 , a second wire 7 , and a resin package 8 .
  • the semiconductor element 2 is arranged as a so-called transistor.
  • a gate metal 9 and a source metal 10 are formed on an obverse surface of the semiconductor element 2 .
  • a drain electrode 11 (described later) is formed on a reverse surface of the semiconductor element 2 although it is not shown in FIG. 1 and FIG. 2 .
  • the main lead 3 is disposed at an end in the longitudinal direction of the resin package 8 .
  • the first sub-lead 4 and the second sub-lead 5 are disposed at both corner parts of the resin package 8 , respectively.
  • the main lead 3 supports the semiconductor element 2 from its reverse surface side, and is electrically connected to the drain electrode 11 (described later).
  • the main lead 3 includes a main portion 12 formed in a substantially quadrangular shape in a plan view and a plurality of projecting portions 13 that selectively protrude from an end surface of the main portion 12 .
  • the main portion 12 has its obverse surface 14 to which the semiconductor element 2 is bonded, and has its reverse surface 15 that is exposed from an outer surface of the resin package 8 .
  • the obverse surface 14 is larger than the reverse surface 15 in comparison between the magnitude of the obverse surface 14 and that of the reverse surface 15 of the main portion 12 .
  • the reverse surface 15 is arranged so as to be slightly larger in size than the semiconductor element 2 in such a way that its outer edge surrounds the semiconductor element 2 , and the obverse surface 14 is arranged so as to be even larger in size than the reverse surface 15 .
  • a support region of the semiconductor element 2 forming the reverse surface 15 is formed so as to be selectively thick, and a part of this region is exposed from the outer surface of the resin package 8 as the reverse surface 15 .
  • the reverse surface 15 is used as a drain terminal of the semiconductor device 1 .
  • the projecting portion 13 protrudes, for example, from an end surface of the main portion 12 that is on the side opposite to the first sub-lead 4 and to the second sub-lead 5 and from both end surfaces beside the end surface located on the side opposite thereto.
  • the projecting portions 13 protrude from all end surfaces, respectively, excluding the end surface facing the first and second sub-leads 4 and 5 in the present preferred embodiment.
  • Each projecting portion 13 is exposed from the outer surface of the resin package 8 .
  • the first sub-lead 4 is formed in a quadrangular shape in a plan view.
  • the first wire 6 is connected to an obverse surface 16 of the first sub-lead 4 .
  • the first wire 6 is connected to the gate metal 9 .
  • the first sub-lead 4 is electrically connected to the gate metal 9 through the first wire 6 .
  • a region forming a reverse surface 17 is formed so as to be selectively thick, and a part of this region is exposed from the outer surface of the resin package 8 as the reverse surface 17 in the same way as in the main portion 12 .
  • Two side surfaces 18 and 18 of the first sub-lead 4 are exposed from the outer surface of the resin package 8 so as to form a corner portion of the resin package 8 .
  • the reverse surface 17 and the side surfaces 18 and 18 exposed from the outer surface of the resin package 8 are used as a gate terminal of the semiconductor device 1 .
  • the second sub-lead 5 is formed in a quadrangular shape in a plan view.
  • the second wire 7 is connected to an obverse surface 19 of the second sub-lead 5 .
  • the second wire 7 is connected to the source metal 10 .
  • the second sub-lead 5 is electrically connected to the source metal 10 through the second wire 7 .
  • a region forming a reverse surface 20 is formed so as to be selectively thick, and a part of this region is exposed from the outer surface of the resin package 8 as the reverse surface 20 in the same way as in the main portion 12 .
  • Two side surfaces 21 and 21 of the second sub-lead 5 are exposed from the outer surface of the resin package 8 so as to form a corner portion of the resin package 8 .
  • the reverse surface 20 and the side surfaces 21 and 21 exposed from the outer surface of the resin package 8 are used as a source terminal of the semiconductor device 1 .
  • the main lead 3 , the first sub-lead 4 , and the second sub-lead 5 can be formed together by applying patterning, such as etching, to a metallic plate made of, for example, Cu.
  • the resin package 8 covers the semiconductor element 2 , apart of the main lead 3 , apart of the first sub-lead 4 , a part of the second sub-lead 5 , the first wire 6 , and the second wire 7 , and is made of, for example, black epoxy resin.
  • FIG. 3 is a schematic plan view of the semiconductor element 2 of FIG. 1 .
  • FIG. 4 is a view showing a cross section in a cutting plane along line IV-IV of FIG. 3 .
  • FIG. 5 is a schematic view to describe a planar shape of a voltage-regulator diode.
  • the semiconductor element 2 is an element provided with a p type channel MISFET of a trench gate structure, and includes a semiconductor layer 22 , a p ⁇ type drain region 23 , an n type body region 24 , a p + type source region 25 , an n + type body contact region 26 , a gate insulating film 27 , a gate electrode 28 , the voltage-regulator diode 29 , an interlayer insulating film 30 , the gate metal 9 , the source metal 10 , and the drain electrode 11 .
  • the semiconductor layer 22 may include, for example, a p + type substrate 31 and a p ⁇ type epitaxial layer 32 formed by growing a semiconductor crystal on the p + type substrate 31 .
  • the p + type substrate 31 and the p ⁇ type epitaxial layer 32 are each made of silicon (Si) in the present preferred embodiment, and yet may be each made of another semiconductor (e.g., SiC, GaN, or the like).
  • Si silicon
  • its thickness may be about 40 ⁇ m to 250 ⁇ m
  • its p type impurity concentration may be about 1 ⁇ 10 21 cm ⁇ 3 to 1 ⁇ 10 22 cm ⁇ 3 .
  • the semiconductor layer 22 is provided to set an active region 40 in which a transistor structure is chiefly disposed and an outer peripheral region 41 that surrounds the active region 40 .
  • the p ⁇ type drain region 23 is an impurity region that occupies a great part of the p ⁇ type epitaxial layer 32 in the active region 40 .
  • impurity regions such as the n type body region 24 , the p + type source region 25 , and the n + type body contact region 26 , are selectively formed at the p ⁇ type epitaxial layer 32 , and yet a p ⁇ type region excluding these impurity regions 24 to 26 may be the p ⁇ type drain region 23 . Therefore, the p ⁇ type drain region 23 may have a p type impurity concentration of 1 ⁇ 10 16 cm ⁇ 3 to 1 ⁇ 10 17 cm ⁇ 3 .
  • the n type body region 24 is an impurity region selectively formed at a surface part of the p ⁇ type epitaxial layer 32 in the active region 40 .
  • a pn diode (parasitic diode 51 ) consisting of a pn junction portion of both the p ⁇ type drain region 23 and the n type body region 24 is built into the semiconductor element 2 .
  • the n type body region 24 may have an n type impurity concentration of 2 ⁇ 10 16 cm ⁇ 3 to 2 ⁇ 10 17 cm ⁇ 3 .
  • the p + type source region 25 is an impurity region formed at a surface part of the n type body region 24 .
  • the p + type source region 25 may have a p type impurity concentration of 1 ⁇ 10 21 cm ⁇ 3 to 5 ⁇ 10 21 cm ⁇ 3 .
  • the n + type body contact region 26 is an impurity region that reaches the n type body region 24 from a surface of the p ⁇ type epitaxial layer 32 through the p + type source region 25 .
  • the n type body region 24 is electrically connectable from the surface side of the p ⁇ type epitaxial layer 32 through the n + type body contact region 26 .
  • the n + type body contact region 26 may have an n type impurity concentration of 1 ⁇ 10 21 cm ⁇ 3 to 5 ⁇ 10 21 cm ⁇ 3 .
  • a gate trench 59 that passes through the p + type source region 25 and through the n type body region 24 from a surface of the semiconductor layer 22 and then reaches the p ⁇ type drain region 23 is formed at the semiconductor layer 22 .
  • the gate trench 59 may be formed in a grid-shaped manner or in a stripe manner in the surface part of the p ⁇ type epitaxial layer 32 .
  • the plurality of n type body regions 24 may be arranged in a matrix manner or in a stripe manner in a plan view.
  • a channel region 33 is formed at a side part of the gate trench 59 .
  • the gate insulating film 27 is made of, for example, silicon oxide (SiO 2 ), and is formed at an inner surface of the gate trench 59 .
  • the gate insulating film 27 is formed so as to extend to the outer peripheral region 41 in addition to the active region 40 .
  • an insulating film formed in the same process step is formed in the active region 40 and the outer peripheral region 41 .
  • the insulating film lying on the outer peripheral region 41 is called the gate insulating film 27 in the present preferred embodiment, the insulating film thereon may be called another name because the gate insulating film 27 does not contribute to the switching of a transistor structure.
  • the gate electrode 28 is made of, for example, polysilicon, and is embedded in the gate trench 59 with the gate insulating film 27 therebetween.
  • the gate electrode 28 faces the channel region 33 with the gate insulating film 27 therebetween.
  • the voltage-regulator diode 29 is made of polysilicon in the present preferred embodiment, and is formed on the gate insulating film 27 . It is possible to form the voltage-regulator diode 29 in the same process step as the gate electrode 28 . As shown in FIG. 5 , the voltage-regulator diode 29 is arranged as an outer peripheral diode formed at a peripheral edge of the semiconductor element 2 along the outer peripheral region 41 .
  • the voltage-regulator diode 29 serving as an outer peripheral diode may be disposed such that its whole is placed in the outer peripheral region 41 , or may be disposed such that its part is placed in the outer peripheral region 41 whereas the remaining parts are placed in the active region 40 as shown in FIG. 4 and FIG. 5 . In other words, the voltage-regulator diode 29 may be formed so as to extend between the active region 40 and the outer peripheral region 41 .
  • the voltage-regulator diode 29 includes a p type portion 34 and an n type portion 35 .
  • the p type portion 34 and the n type portion 35 are each made of an impurity region in a polysilicon film, and the voltage-regulator diode 29 is made of the p type portion 34 and the n type portion 35 that serve as a pair and that are adjacent to each other.
  • the p type portion 34 and the n type portion 35 are each formed in an annular shape that surrounds the active region 40 .
  • a pn junction portion 36 between these p and n type portions 34 , 35 has an integral structure formed in an annular shape surrounding the active region 40 .
  • the p type portion 34 and the n type portion 35 may have a width W 1 and a width W 2 , respectively, that are equal to each other. Additionally, with respect to a disposition form, the n type portion 35 may be placed at a more inward side than the p type portion 34 .
  • the p type portion 34 is connected to the gate metal 9 as described later, and therefore it is possible to simplify a connection structure between the p type portion 34 and a gate finger 42 (described later) drawn around to the peripheral edge of the semiconductor element 2 by placing the p type portion 34 at an outer position. For example, it is only necessary to extend a contact directly downwardly from the gate finger 42 .
  • the breakdown voltage Vz of the voltage-regulator diode 29 is set to be, for example, 10 V or less, preferably 6.8 V to 8 V. It is possible to realize the breakdown voltage Vz falling within this range, for example, by appropriately setting a p type impurity concentration of the p type portion 34 and an n type impurity concentration of the n type portion 35 . For example, it is possible to realize it by setting the p type impurity concentration of the p type portion 34 at 1 ⁇ 10 16 cm ⁇ 3 to 1 ⁇ 10 17 cm ⁇ 3 and by setting the n type impurity concentration of the n type portion 35 at 1 ⁇ 10 21 cm ⁇ 3 to 5 ⁇ 10 21 cm ⁇ 3 .
  • the interlayer insulating film 30 is made of, for example, silicon oxide (SiO 2 ), and is formed on the p ⁇ type epitaxial layer 32 so as to cover the gate electrode 28 and the voltage-regulator diode 29 .
  • a contact hole 37 by which the p + type source region 25 and the n + type body contact region 26 are exposed, a contact hole 38 by which the p type portion 34 of the voltage-regulator diode 29 is exposed, and a contact hole 39 by which the n type portion 35 of the voltage-regulator diode 29 is exposed are formed in the interlayer insulating film 30 .
  • the gate metal 9 and the source metal 10 are each made of an electrode film formed on the interlayer insulating film 30 . It is possible to form the gate metal 9 and the source metal 10 by depositing a material for the electrode film (for example, a metal that includes Al) on the interlayer insulating film 30 according to a sputtering method or the like and then applying patterning, such as etching, to the electrode film. In other words, the gate metal 9 and the source metal 10 may be formed in the same process step.
  • a material for the electrode film for example, a metal that includes Al
  • the gate metal 9 includes a gate finger 42 and a gate pad 43 .
  • the gate finger 42 is formed in a substantially quadrangular ring shape along the peripheral edge of the semiconductor element 2 in a plan view, and the active region 40 is set in a region surrounded by the gate finger 42 .
  • the gate finger 42 is connected to the p type portion 34 of the voltage-regulator diode 29 through the contact hole 38 . Additionally, the gate finger 42 is connected to the gate electrode 28 through a contact hole (not shown) formed in the interlayer insulating film 30 .
  • the gate pad 43 is disposed at one corner portion of the gate finger 42 .
  • the gate pad 43 is formed so as to be integrally continuous with the gate finger 42 .
  • the first wire 6 mentioned above is connected to the gate pad 43 .
  • the source metal 10 is disposed in a region surrounded by the gate finger 42 and the gate pad 43 .
  • the source metal 10 is separated from the gate finger 42 and from the gate pad 43 by means of a removal region 44 formed by etching the electrode film.
  • the source metal 10 is connected to the p + type source region 25 and to the n + type body contact region 26 through the contact hole 37 , and is connected to the n type portion 35 of the voltage-regulator diode 29 through the contact hole 39 .
  • the drain electrode 11 is made of, for example, the same material as the gate metal 9 and as the source metal 10 , and may be formed at the entire reverse surface of the p + type substrate 31 .
  • the semiconductor device 1 described above is usable as a protecting element of an IC (Integrated Circuit) mounted in general electronic equipment, such as a cellular phone, a smartphone, a digital camera, and a video camera, and is best suited to the cellular phone and the smartphone that will be facilitated to be reduced in size from the fact that the semiconductor device 1 is a comparatively small-sized semiconductor device.
  • IC Integrated Circuit
  • FIG. 6 is a view showing a part of a protection circuit to which the semiconductor device 1 of FIG. 1 is connected.
  • the protection circuit diagram of FIG. 6 is merely one usage example of the semiconductor device 1 , and the connection mode of the semiconductor device 1 is not limited to the arrangement of FIG. 6 .
  • the protection circuit 45 shown in FIG. 6 includes an IC 46 and the semiconductor device 1 .
  • the IC 46 may be one of various general-purpose ICs, such as a power management IC and a transmission/reception control IC of a smartphone.
  • the IC 46 has, for example, a power supply terminal 47 (Vcc), an output terminal 48 (OUT), and a ground terminal 49 (GND).
  • the power supply terminal 47 is connected to a power source 50 , and the ground terminal 49 is grounded to the ground potential.
  • the drain terminal D (the main lead 3 of FIG. 2 ) of the semiconductor device 1 is connected to the output terminal 48 of the IC 46 , and the source terminal S (the second sub-lead 5 of FIG. 2 ) is connected to a load (not shown) as an output terminal (OUT) of the semiconductor device 1 .
  • the gate terminal G (the first sub-lead 4 of FIG. 2 ) of the semiconductor device 1 is grounded to the ground potential.
  • a voltage by which the drain terminal D becomes positive (+) and by which the source terminal S becomes negative ( ⁇ ) is applied.
  • a voltage by which the p ⁇ type drain region 23 becomes positive (+) and by which the p + type source region 25 becomes negative ( ⁇ ) is applied, and therefore a forward bias is applied to a parasitic diode 51 built into the semiconductor element 2 .
  • an electric current flows from the drain-terminal-D side to the source-terminal-S side through the parasitic diode 51 .
  • the current flow from the drain-terminal-D side to the source-terminal-S side brings the source into a positive potential with respect to the gate (i.e., the gate becomes negative with respect to the source), and, as a result, a positive hole is induced in the n type channel region 33 (see FIG. 4 ) directly under the gate electrode 28 , and the transistor reaches an ON state.
  • FIG. 7 is a view to make a comparison between the power consumption of a MOSFET and that of a Schottky barrier diode (SBD).
  • the Schottky barrier diodes of ( 1 ) and ( 2 ) are required to be enlarged from size 1006 to size 2512 in order to restrain the power consumption in accordance with the consumption current of an IC that is tending upward, whereas the MOSFET is low in power consumption although it has size 0604 that is considerably smaller than size 2512.
  • the semiconductor device 1 is used by being connected to the IC 46 , it is possible to pass a forward current through a transistor structure that has a smaller loss and that is lower in power consumption than a diode, and therefore it is possible to employ a small-sized chip. As a result, it is possible to achieve space-saving if the semiconductor device 1 is used as a protecting element of the IC 46 of electronic equipment or the like.
  • the reverse bias is also applied to the pn junction portion 36 of the voltage-regulator diode 29 . Therefore, when the counter electromotive force of the load is large or when a large voltage, such as static electricity or surge voltage, is applied, the voltage-regulator diode 29 undergoes a Zener breakdown, and a reverse current flows to the gate side (ground potential side) through the voltage-regulator diode 29 , and therefore it is possible to prevent a heavy electric current from flowing to the IC 46 .
  • the semiconductor device 1 is used as a protecting element of the IC 46 of electronic equipment or the like, it is possible to develop reverse voltage prevention and overvoltage protection with respect to the IC 46 although its power consumption is low, and therefore it is possible to maintain a protective function as a protecting element.
  • the transistor structure and the voltage-regulator diode 29 are unified into a single-chip configuration, and therefore it is possible to achieve more excellent space-saving than in a case in which these structure and diode are mounted as different chips.
  • the power consumption becomes higher in proportion to a decrease in size of the diode as shown in FIG. 7 , and therefore, in the semiconductor device 1 that has been reduced in size, it is preferable to consider the power consumption (loss) of the voltage-regulator diode 29 .
  • FIG. 8 is a view to describe a difference between the effective area of an outer peripheral diode and that of a pad diode.
  • FIG. 9 is a view to make a comparison between the power consumption of the outer peripheral diode and that of the pad diode.
  • a flat-surface arrangement of the semiconductor element 2 required to be described in this section is emphatically shown, and therefore FIG. 8 differs from FIG. 1 in magnitude, shape, etc.
  • the voltage-regulator diode 29 is arranged as a pad diode formed at an outer periphery of the gate pad 43 .
  • the semiconductor element 2 depicted on the right side of the drawing sheet is arranged as the outer peripheral diode described above. In this case, if the voltage-regulator diode 29 is arranged as the outer peripheral diode, the area of the pn junction portion 36 (see FIG. 4 and FIG.
  • the voltage-regulator diode 29 is disposed so as to surround the active region 40 , and therefore the disposition region of a cell having a transistor structure is further limited than in a case in which the pad diode is employed. For example, if the area of the pn junction portion is increased by 50%, a decrease of 20% will be anticipated with respect to the area of the active region 40 .
  • the anticipated value of a reduction of the area of the active region 40 in FIG. 8 is based on the structure of the semiconductor element in which a two-way Zener diode 52 is mounted in order to protect a transistor structure like an ESD protection diode shown as a reference structure of FIG. 10A .
  • a two-way Zener diode 52 has a repetitive structure of a plurality of p type portions 53 and n type portions 54 , and therefore a comparatively-wide diode disposition space is required.
  • the voltage-regulator diode 29 of the present preferred embodiment is composed of the p type portion 34 and the n type portion 35 that are adjacent to each other and that serve as a pair as shown in FIG. 10B , and therefore it is possible to narrow the diode disposition space, and it is possible to allot a space corresponding to a reduction created by the narrowness for a cell disposition space having a transistor structure.
  • FIG. 11 it is possible to reduce the power consumption of the transistor (MOSFET) by, for example, 17%, and it is also possible to keep the power consumption of the transistor at a low level.
  • the voltage-regulator diode 29 composed of the p and n type portions 34 and 35 serving as a pair makes it possible to make the breakdown voltage Vz lower than the two-way Zener diode 52 .
  • the voltage-regulator diode may be a voltage-regulator diode 58 composed of a p + type impurity region 55 and an n type impurity region 56 both of which serve as a pair and both of which are disposed in the p ⁇ type epitaxial layer 32 like a semiconductor element 62 of FIG. 13 .
  • an n + type impurity region 57 formed at a surface part of the n type impurity region 56 is an impurity region to make contact with the n type impurity region 56 .
  • the voltage-regulator diode 29 may be made of a repetitive structure of the p type portion 34 and the n type portion 35 that are alternately disposed along the outer peripheral region 41 as shown in FIG. 14 . In this case, there is a need to, from the source side and from the gate side, make contact with each of the plurality of p type portions 34 and n type portions 35 separated from each other.
  • the transistor structure of the semiconductor element 2 may be a trench planar gate structure without being limited to the trench gate structure.
  • FIG. 15 is a perspective view of a semiconductor device 71 according to another preferred embodiment of the present invention.
  • FIG. 16 is a front view of the semiconductor device 71 .
  • FIG. 17 is a back view of the semiconductor device 71 .
  • FIG. 18 is a plan view of the semiconductor device 71 .
  • FIG. 19 is a bottom view of the semiconductor device 71 .
  • FIG. 20 is a right side view of the semiconductor device 71 .
  • FIG. 21 is a left side view of the semiconductor device 71 .
  • FIG. 22 is a view showing a cross section in a cutting plane along line XXII-XXII of FIG. 18 .
  • the semiconductor device 71 has a package structure of WL-CSP (Wafer Level-Chip Size Package).
  • the semiconductor device 71 has a structure in which the semiconductor element 2 described above is used as a chip size level package, and includes a semiconductor substrate 72 formed in a rectangular shape in a plan view as an example of the semiconductor layer 22 described above, and is formed in substantially the same size as the external shape size of the semiconductor substrate 72 .
  • the length L of the semiconductor device 71 is less than 0.50 mm (preferably, 0.40 mm or more), the width W thereof is less than 0.40 mm (preferably, 0.30 mm or more), and the thickness D thereof is less than 0.15 mm (preferably, 0.10 mm or more).
  • the semiconductor device 71 has a very small package structure of size 0403.
  • the thickness of the semiconductor device 71 is less than 0.15 mm, it is possible to reduce the amount of protrusion from an ordinary position of a side surface of the semiconductor device 71 even if the semiconductor device 71 is inclinedly mounted. This makes it possible to prevent the semiconductor device 71 from making contact with an adjoining semiconductor device even when the semiconductor device 71 is mounted at a high density.
  • the subject of this description may be replaced with another from the fact that the semiconductor device 71 has the package structure of WL-CSP.
  • the semiconductor substrate 72 formed in a quadrangular shape in a plan view may be replaced with the semiconductor device 71 formed in a quadrangular shape in a plan view.
  • the description of a pad being disposed at a peripheral edge of the semiconductor substrate 72 may be replaced with the description of a pad being disposed at a peripheral edge of the semiconductor substrate 71 .
  • the semiconductor substrate 72 formed in a rectangular parallelepiped shape may have an obverse surface 72 A, a reverse surface 72 B on the side opposite to the obverse surface 72 A, and four side surfaces 72 C, 72 D, 72 E, and 72 F between the obverse surface 72 A and the reverse surface 72 B, and the obverse surface 72 A and the side surfaces 72 C to 72 F may be covered with a surface insulating film (not shown).
  • the side surfaces 72 C and 72 E are side surfaces along long sides 121 of the semiconductor substrate 72 , respectively
  • the side surfaces 72 D and 72 F are side surfaces along short sides 122 of the semiconductor substrate 72 , respectively.
  • Corner portions 74 CD, 74 DE, 74 EF, and 74 FC of the semiconductor substrate 72 are formed at intersection portions of adjoining side surfaces 72 C to 72 F, respectively.
  • a drain pad 77 (first pad) is disposed at a first peripheral edge portion 75 along the side surface 72 C on the long-side- 121 side.
  • the drain pad 77 is formed at a middle apart from the corner portions 74 CD and 74 FC of both ends of the first peripheral edge portion 75 , and a region of a predetermined interval (e.g., about 0.1 mm to 0.15 mm) is provided between the drain pad 77 and each of the corner portions 74 CD and 74 FC.
  • a source pad 78 (second pad) is disposed at the corner portion 74 EF of an end of the second peripheral edge portion 76 of the semiconductor substrate 72 that faces the first peripheral edge portion 75
  • a gate pad 79 (third pad) is disposed at the corner portion 74 DE of the other end of the second peripheral edge portion 76 .
  • the drain pad 77 is disposed in an outer region of a first circular arc 80 and in an outer region of a second circular arc 81 .
  • the first circular arc 80 has a radius equal to the length (width W of FIG. 15 ) of the short side 122 of the semiconductor substrate 72 .
  • a center of the first circular arc 80 is coincided with a vertex V 1 of the corner portion 74 EF of the end of the second peripheral edge portion 76 .
  • the second circular arc 81 has a radius equal to the length (width W of FIG. 15 ) of the short side 122 of the semiconductor substrate 72 .
  • a center of the second circular arc 81 is coincided with a vertex V 2 of the corner portion 74 DE of the other end of the second peripheral edge portion 76 .
  • the first and second circular arc 80 , 81 are virtual lines which are depicted on the obverse surface 72 A of the semiconductor substrate 72 as shown in FIG. 18 .
  • the drain pad 77 is formed in a triangular shape having two sides that are a pair of tangents drawn to the first and second circular arcs 80 and 81 , respectively, from an intersection 82 between the first circular arc 80 and the second circular arc 81 in those outer regions.
  • the source pad 78 is formed in a sectorial shape that has the same center as the first circular arc 80 .
  • the radius R 1 of the source pad 78 is, for example, 0.07 mm to 0.13 mm (preferably, 0.10 mm or more). For example, if the radius R 1 is 0.07 mm, the area of the source pad 78 is 3.85 ⁇ 10 ⁇ 3 mm 2 , and, if the radius R 1 is 0.10 mm, the area of the source pad 78 is 7.85 ⁇ 10 ⁇ 3 mm 2 .
  • the gate pad 79 is formed in a sectorial shape that has the same center as the second circular arc 81 .
  • the radius R 2 of the gate pad 79 is, for example, 0.07 mm to 0.13 mm (preferably, 0.10 mm or more). For example, if the radius R 2 is 0.07 mm, the area of the gate pad 79 is 3.85 ⁇ 10 ⁇ 3 mm 2 . If the radius R 2 is 0.10 mm, the area of the gate pad 79 is 7.85 ⁇ 10 ⁇ 3 mm 2 .
  • a drain wiring film 83 , a source wiring film 84 , and a gate wiring film 85 are disposed between the drain pad 77 , the source pad 78 , the gate pad 79 , and the semiconductor substrate 72 , respectively. These films are each made of a metallic layer, such as AlCu layer, and a barrier layer (e.g., Ti, TiN, etc.) may be formed on the obverse surface and the reverse surface of the layer if needed.
  • the drain wiring film 83 , the source wiring film 84 , and the gate wiring film 85 may be electrically connected to the p ⁇ type drain region 23 , to the p + type source region 25 , and to the gate electrode 28 mentioned above, respectively.
  • the gate wiring film 85 is formed in a sectorial shape in a plan view that is a similar figure larger than the gates pad 79 .
  • the source wiring film 84 is formed so as to cover substantially half the region on the second-peripheral-edge-portion- 76 side of the semiconductor substrate 72 .
  • it is formed on the side-surface- 72 F side in the longitudinal direction and on the side-surface- 72 C side in the width direction with respect to the gate wiring film 85 so as to avoid the gate wiring film 85 . Therefore, the gate wiring film 85 formed in a sectorial shape in a plan view has its circular arc part adjacent to the source wiring film 84 .
  • the drain wiring film 83 is formed so as to cover substantially half the region on the first-peripheral-edge-portion- 75 side of the semiconductor substrate 72 .
  • the source wiring film 84 and the drain wiring film 83 are respectively made of wiring films substantially equal in area to each other, and it is possible to make the wiring resistance on the source side and the wiring resistance on the drain side substantially equal to each other.
  • FIG. 23 is a view to make a comparison between the chip size of the semiconductor device 71 and that of a semiconductor device 100 according to a reference example. For clarification, only reference signs necessary for a comparison among the reference signs of FIG. 15 to FIG. 22 are shown in FIG. 23 , and the other reference signs are excluded.
  • the reason is that at least a pitch P of 0.2 mm is secured as a distance between the source pad 78 and the gate pad 79 in order to avoid a source-to-gate short circuit in the short-side direction.
  • the drain pad 77 is formed in a shape from a corner portion at an end to a corner portion at the other end of the short side 122 .
  • the source-to-gate pitch P will become below 0.2 mm, and the problem of a source-to-gate short circuit will be caused when mounted.
  • the source pad 78 and the gate pad 79 are disposed adjacently to each other in the long side 121 , it is difficult to resolve the problem of a short circuit between the pads.
  • the drain pad 77 assumes a shape from a corner portion at an end to a corner portion at the other end of the long side 121 as shown by reference sign “ 77 ′” and the broken line. Therefore, as a result of the decrease of the package size, the problem of a source-to-drain short circuit or of a gate-to-drain short circuit is caused.
  • the source pad 78 and the gate pad 79 are disposed adjacently to each other in the long side 121 .
  • the drain pad 77 is disposed at the middle of the long side 121 of the semiconductor substrate 72 , and a region of a predetermined interval is provided between the drain pad 77 and each of the corner portions 74 CD and 74 FC at both ends of the long side 121 . This makes it possible to make a distance (pitch P 1 ) between the drain pad 77 and the source pad 78 and a distance (pitch P 2 ) between the drain pad 77 and the gate pad 79 longer than in the semiconductor device 100 of the reference example.
  • the pad area of the source pad 78 and that of the gate pad 79 are each 5% or more of the package size. Therefore, it is possible to make the size of the semiconductor substrate smaller than the size of the semiconductor device 100 while avoiding a short circuit when mounted. This makes it possible to provide a semiconductor device reduced in size.
  • the drain pad 77 is disposed in the outer regions of the first and second circular arcs 80 and 81 each of which has a radius equal to the length of the short side 122 as shown in FIG. 18 . Therefore, it is possible to secure a length corresponding to at least a difference between the length of the short side 122 of the semiconductor device 71 and each magnitude (width) of the source and gate pads 78 and 79 as the pitch P 1 and as the pitch P 2 .
  • the drain pad 77 is formed in a triangular shape having two sides that are a pair of tangents drawn to the first and second circular arcs 80 and 81 , respectively, from the intersection 82 between the first circular arc 80 and the second circular arc 81 . This makes it possible to secure a junction area large enough for the drain pad 77 while reducing the semiconductor device 71 in size. Therefore, it is also possible to restrain the fastening strength from being weakened when the semiconductor device 71 is mounted.
  • the source pad 78 and the gate pad 79 are formed in sectorial shapes that have the same centers as the first and second circular arcs 80 and 81 , respectively. This makes it possible to secure a junction area large enough for each of the source and gate pads 78 and 79 while securing a length of 0.2 mm as each of the pitches P 1 and P 2 .
  • the semiconductor device 71 it is possible to reduce the mounting area by about 40% in comparison with the semiconductor device 100 of the reference example while sufficiently securing a pitch between the adjoining pads and a junction area of the pads.
  • a lateral MISFET in which a source region and a drain region with an interval therebetween are disposed in the lateral direction along the obverse surface 72 A may be formed on the semiconductor substrate 72 .

Abstract

A semiconductor device includes a semiconductor layer that has a transistor structure including a p type source region, a p type drain region, an n type body region between the p type source region and the p type drain region, and a gate electrode facing the n type body region and a voltage-regulator diode that is disposed at the semiconductor layer and that has an n type portion connected to the p type source region and a p type portion connected to the gate electrode, in which the transistor structure and the voltage-regulator diode are unified into a single-chip configuration.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS
The present application corresponds to Japanese Patent Application No. 2016-099748 filed in the Japan Patent Office on May 18, 2016 and Japanese Patent Application No. 2017-079993 filed in the Japan Patent Office on Apr. 13, 2017, and the entire disclosure of the application is incorporated herein by reference.
TECHNICAL FIELD
The present invention relates to a semiconductor device that has a transistor structure and a voltage-regulator diode in a single chip.
BACKGROUND ART
An element that protects an IC (Integrated Circuit) has been heretofore incorporated into various control circuits. For example, Patent Document 1 (Japanese Patent Application Publication No. 2012-154119) and Patent Document 2 (Japanese Patent Application Publication No. 2014-17701) each disclose a diode as such an IC-protecting element.
SUMMARY OF INVENTION
A consumption current of an IC tends to increase as a result of an increase in function of a sensor, a display for portable devices, a camera for portable devices, etc., that are controlled by the IC. Therefore, if a diode is used as an IC-protecting element, the chip size of the protecting element will be required to be made large in accordance with the consumption current of the IC, thus making it difficult to meet the demand of a reduction in size of devices.
On the other hand, a transistor can achieve low power consumption even if it is smaller in size than a diode, and hence has a potential as an alternative element of the diode. However, in a single transistor, it is difficult to develop the characteristics of reverse voltage prevention and overvoltage protection that are required to protect an IC.
An object of the present invention is to provide a semiconductor device that is produced by unifying a transistor and a voltage-regulator diode into a single-chip configuration and that is capable of achieving low power consumption and developing reverse voltage prevention and overvoltage protection with respect to an external device, such as an IC.
BRIEF DESCRIPTION OF DRAWINGS
FIG. 1 is a schematic plan view of a semiconductor device according to one preferred embodiment of the present invention.
FIG. 2 is a schematic bottom view of the semiconductor device according to one preferred embodiment of the present invention.
FIG. 3 is a schematic plan view of a semiconductor element of FIG. 1.
FIG. 4 is a view showing a cross section in a cutting plane along line IV-IV of FIG. 3.
FIG. 5 is a schematic view to describe a planar shape of a voltage-regulator diode.
FIG. 6 is a view showing a part of a protection circuit to which the semiconductor device of FIG. 1 is connected.
FIG. 7 is a view to make a comparison between the power consumption of a MOSFET and that of a Schottky barrier diode (SBD).
FIG. 8 is a view to describe a difference between the effective area of an outer peripheral diode and that of a pad diode.
FIG. 9 is a view to make a comparison between the power consumption of the outer peripheral diode and that of the pad diode.
FIG. 10A and FIG. 10B are views to describe a structural difference between a voltage-regulator diode and an ESD protection diode.
FIG. 11 is a view to describe the reduction effect of power consumption of a MOSFET in which a space for the outer peripheral diode has been reduced.
FIG. 12 is a view to make a comparison between the breakdown voltage of the voltage-regulator diode and that of the ESD protection diode.
FIG. 13 is a view showing another form of the semiconductor element of FIG. 4.
FIG. 14 is a view showing another form of the semiconductor element of FIG. 4.
FIG. 15 is a perspective view of a semiconductor device according to another preferred embodiment of the present invention.
FIG. 16 is a front view of the semiconductor device of FIG. 15.
FIG. 17 is a back view of the semiconductor device of FIG. 15.
FIG. 18 is a plan view of the semiconductor device of FIG. 15.
FIG. 19 is a bottom view of the semiconductor device of FIG. 15.
FIG. 20 is a right side view of the semiconductor device of FIG. 15.
FIG. 21 is a left side view of the semiconductor device of FIG. 15.
FIG. 22 is a view showing a cross section in a cutting plane along line XXII-XXII of FIG. 18.
FIG. 23 is a view to make a comparison between the chip size of the semiconductor device of FIG. 15 and that of a semiconductor device according to a reference example.
 DESCRIPTION OF EMBODIMENTS
A semiconductor device according to one preferred embodiment of the present invention includes a semiconductor layer that has a transistor structure including a p type source region, a p type drain region, an n type body region between the p type source region and the p type drain region, and a gate electrode facing the n type body region and a voltage-regulator diode that is disposed at the semiconductor layer and that has an n type portion connected to the p type source region and a p type portion connected to the gate electrode, in which the transistor structure and the voltage-regulator diode are unified into a single-chip configuration.
The transistor structure of the semiconductor device includes a p channel type MISFET that induces a positive hole in an n type body region directly under a gate electrode and that is brought into an ON state either by applying a voltage that becomes negative with respect to a source to the gate electrode or by applying a positive voltage (a gate is set at a ground (0 V)) to the source.
For example, if a voltage by which the p type drain region becomes positive (+) and by which the p type source region becomes negative (−) is applied in a state in which the gate electrode is grounded at a ground potential, a forward bias will be applied to a parasitic diode (a pn diode consisting of a pn junction portion of both the p type drain region and the n type body region) built into the transistor structure. As a result, an electric current flows from the drain side to the source side through the parasitic diode. The current flow from the drain side to the source side brings the source into a positive electric potential with respect to the gate (i.e., the gate becomes negative with respect to the source), and, as a result, a positive hole is induced in the n type body region directly under the gate electrode, and the transistor reaches an ON state. Therefore, when the semiconductor device is used by being connected to an external device, such as IC, it is possible to pass a forward current through the transistor structure that has a smaller loss and that is lower in power consumption than a diode, and therefore it is possible to employ a small-sized chip. As a result, it is possible to achieve space-saving in electronic equipment or the like.
On the other hand, if a load that is controlled by an IC is inductive, a counter electromotive force occurs in the load when an electric current flowing through the load is shut off. Because of this counter electromotive force, there is a case in which a voltage by which the p-type-source-region side becomes positive (+) is applied between the p type source region and the p type drain region. In this case, a reverse bias is applied to the parasitic diode, and therefore an electric current does not flow through an internal circuit of the IC, and, as a result, it is possible to protect the IC. At this time, the reverse bias is also applied to the pn junction portion of both the p type portion and the n type portion of the voltage-regulator diode. Therefore, when the counter electromotive force of the load is large or when a large voltage, such as static electricity or surge voltage, is applied, the voltage-regulator diode undergoes a Zener breakdown, and a reverse current flows to the gate side (ground potential side) through the voltage-regulator diode, and therefore it is possible to prevent a heavy electric current from flowing to the IC.
Accordingly, if the semiconductor device according to one preferred embodiment of the present invention is used as a protecting element of an IC of electronic equipment or the like, it is possible to develop reverse voltage prevention and overvoltage protection with respect to an external device, such as IC, although its power consumption is low, and therefore it is possible to maintain a protective function as a protecting element. Moreover, the transistor structure and the voltage-regulator diode are unified into a single-chip configuration, and therefore it is possible to achieve more excellent space-saving than in a case in which these are mounted in equipment as different chips.
In the semiconductor device according to one preferred embodiment of the present invention, the semiconductor layer may include an active region including the transistor structure and an outer peripheral region surrounding the active region, and the voltage-regulator diode may include an outer peripheral diode disposed along the outer peripheral region.
According to this arrangement, it is possible to increase the junction area of both the p type portion and the n type portion of the voltage-regulator diode, and therefore it is possible to reduce the resistance value of the voltage-regulator diode, and it is possible to reduce power consumption. As a result, it is possible to reduce a loss in the voltage-regulator diode, and it is possible to prevent a thermal breakdown.
In the semiconductor device according to one preferred embodiment of the present invention, in the outer peripheral diode, the p type portion and the n type portion may be each formed in a shape surrounding the active region.
According to this arrangement, the pn junction portion of both the p type portion and the n type portion of the voltage-regulator diode has an integral structure that surrounds the active region, and therefore it is possible to further reduce a loss in the voltage-regulator diode.
In the semiconductor device according to one preferred embodiment of the present invention, the p type portion and the n type portion may each have a width equal to each other.
In the semiconductor device according to one preferred embodiment of the present invention, in the outer peripheral diode, the n type portion may be disposed at a more inward side than the p type portion.
In the semiconductor device according to one preferred embodiment of the present invention, the voltage-regulator diode may be made of polysilicon stacked on the semiconductor layer.
According to this arrangement, the voltage-regulator diode is made of polysilicon that is general as material for the gate electrode, and, as a result, it is possible to form the gate electrode and the voltage-regulator diode in the same process step.
In the semiconductor device according to one preferred embodiment of the present invention, the transistor structure may include a trench gate structure made of polysilicon as the gate electrode embedded in a gate trench which is formed at the semiconductor layer.
In the semiconductor device according to one preferred embodiment of the present invention, the voltage-regulator diode may be made of an impurity region disposed in the semiconductor layer.
In the semiconductor device according to one preferred embodiment of the present invention, a breakdown voltage of the voltage-regulator diode may be 8 V or less.
In the semiconductor device according to one preferred embodiment of the present invention, the semiconductor device may have a length-breadth chip size of 0.6 mm×0.4 mm or less.
If the semiconductor device has this size, it is possible to reduce the size of electronic equipment in which the semiconductor device is mounted.
A preferred embodiment of the present invention will be hereinafter described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic plan view of a semiconductor device 1 according to one preferred embodiment of the present invention. FIG. 2 is a schematic bottom view of the semiconductor device 1 according to one preferred embodiment of the present invention. In FIG. 1, the inside of a package is depicted in a see-through state so that the structure of the semiconductor device 1 can be easily understood.
The semiconductor device 1 is arranged as a comparatively small-sized semiconductor device that is capable of employing a so-called surface mount technology. As an example of the dimensions of the semiconductor device 1, the size L in the longitudinal direction is about 0.6 mm, the size W in the width direction is about 0.4 mm, and the size in the thickness direction is about 0.36 mm.
The semiconductor device 1 includes a semiconductor element 2, a main lead 3, a first sub-lead 4, a second sub-lead 5, a first wire 6, a second wire 7, and a resin package 8.
The semiconductor element 2 is arranged as a so-called transistor. A gate metal 9 and a source metal 10 are formed on an obverse surface of the semiconductor element 2. A drain electrode 11 (described later) is formed on a reverse surface of the semiconductor element 2 although it is not shown in FIG. 1 and FIG. 2.
The main lead 3 is disposed at an end in the longitudinal direction of the resin package 8. In the opposite end in the longitudinal direction thereof, the first sub-lead 4 and the second sub-lead 5 are disposed at both corner parts of the resin package 8, respectively.
The main lead 3 supports the semiconductor element 2 from its reverse surface side, and is electrically connected to the drain electrode 11 (described later). The main lead 3 includes a main portion 12 formed in a substantially quadrangular shape in a plan view and a plurality of projecting portions 13 that selectively protrude from an end surface of the main portion 12.
The main portion 12 has its obverse surface 14 to which the semiconductor element 2 is bonded, and has its reverse surface 15 that is exposed from an outer surface of the resin package 8. As is apparent from FIG. 1, the obverse surface 14 is larger than the reverse surface 15 in comparison between the magnitude of the obverse surface 14 and that of the reverse surface 15 of the main portion 12. For example, the reverse surface 15 is arranged so as to be slightly larger in size than the semiconductor element 2 in such a way that its outer edge surrounds the semiconductor element 2, and the obverse surface 14 is arranged so as to be even larger in size than the reverse surface 15. In other words, in the main portion 12, a support region of the semiconductor element 2 forming the reverse surface 15 is formed so as to be selectively thick, and a part of this region is exposed from the outer surface of the resin package 8 as the reverse surface 15. The reverse surface 15 is used as a drain terminal of the semiconductor device 1.
The projecting portion 13 protrudes, for example, from an end surface of the main portion 12 that is on the side opposite to the first sub-lead 4 and to the second sub-lead 5 and from both end surfaces beside the end surface located on the side opposite thereto. In other words, in the main portion 12, the projecting portions 13 protrude from all end surfaces, respectively, excluding the end surface facing the first and second sub-leads 4 and 5 in the present preferred embodiment. Each projecting portion 13 is exposed from the outer surface of the resin package 8.
The first sub-lead 4 is formed in a quadrangular shape in a plan view. The first wire 6 is connected to an obverse surface 16 of the first sub-lead 4. The first wire 6 is connected to the gate metal 9. As a result, the first sub-lead 4 is electrically connected to the gate metal 9 through the first wire 6. In the first sub-lead 4, a region forming a reverse surface 17 is formed so as to be selectively thick, and a part of this region is exposed from the outer surface of the resin package 8 as the reverse surface 17 in the same way as in the main portion 12. Two side surfaces 18 and 18 of the first sub-lead 4 are exposed from the outer surface of the resin package 8 so as to form a corner portion of the resin package 8. The reverse surface 17 and the side surfaces 18 and 18 exposed from the outer surface of the resin package 8 are used as a gate terminal of the semiconductor device 1.
The second sub-lead 5 is formed in a quadrangular shape in a plan view. The second wire 7 is connected to an obverse surface 19 of the second sub-lead 5. The second wire 7 is connected to the source metal 10. As a result, the second sub-lead 5 is electrically connected to the source metal 10 through the second wire 7. In the second sub-lead 5, a region forming a reverse surface 20 is formed so as to be selectively thick, and a part of this region is exposed from the outer surface of the resin package 8 as the reverse surface 20 in the same way as in the main portion 12. Two side surfaces 21 and 21 of the second sub-lead 5 are exposed from the outer surface of the resin package 8 so as to form a corner portion of the resin package 8. The reverse surface 20 and the side surfaces 21 and 21 exposed from the outer surface of the resin package 8 are used as a source terminal of the semiconductor device 1.
The main lead 3, the first sub-lead 4, and the second sub-lead 5 can be formed together by applying patterning, such as etching, to a metallic plate made of, for example, Cu.
The resin package 8 covers the semiconductor element 2, apart of the main lead 3, apart of the first sub-lead 4, a part of the second sub-lead 5, the first wire 6, and the second wire 7, and is made of, for example, black epoxy resin.
FIG. 3 is a schematic plan view of the semiconductor element 2 of FIG. 1. FIG. 4 is a view showing a cross section in a cutting plane along line IV-IV of FIG. 3. FIG. 5 is a schematic view to describe a planar shape of a voltage-regulator diode.
The semiconductor element 2 is an element provided with a p type channel MISFET of a trench gate structure, and includes a semiconductor layer 22, a p− type drain region 23, an n type body region 24, a p+ type source region 25, an n+ type body contact region 26, a gate insulating film 27, a gate electrode 28, the voltage-regulator diode 29, an interlayer insulating film 30, the gate metal 9, the source metal 10, and the drain electrode 11.
The semiconductor layer 22 may include, for example, a p+ type substrate 31 and a p− type epitaxial layer 32 formed by growing a semiconductor crystal on the p+ type substrate 31. The p+ type substrate 31 and the p− type epitaxial layer 32 are each made of silicon (Si) in the present preferred embodiment, and yet may be each made of another semiconductor (e.g., SiC, GaN, or the like). With respect to the p+ type substrate 31, its thickness may be about 40 μm to 250 μm, and its p type impurity concentration may be about 1×1021 cm−3 to 1×1022 cm−3. On the other hand, with respect to the p− type epitaxial layer 32, its thickness may be about 3 μm to 8 μm, and its p type impurity concentration may be about 1×1016 cm−3 to 1×1017 cm−3. The semiconductor layer 22 is provided to set an active region 40 in which a transistor structure is chiefly disposed and an outer peripheral region 41 that surrounds the active region 40.
The p− type drain region 23 is an impurity region that occupies a great part of the p− type epitaxial layer 32 in the active region 40. As described later, in the present preferred embodiment, impurity regions, such as the n type body region 24, the p+ type source region 25, and the n+ type body contact region 26, are selectively formed at the p− type epitaxial layer 32, and yet a p− type region excluding these impurity regions 24 to 26 may be the p− type drain region 23. Therefore, the p− type drain region 23 may have a p type impurity concentration of 1×1016 cm−3 to 1×1017 cm−3.
The n type body region 24 is an impurity region selectively formed at a surface part of the p− type epitaxial layer 32 in the active region 40. As a result, a pn diode (parasitic diode 51) consisting of a pn junction portion of both the p− type drain region 23 and the n type body region 24 is built into the semiconductor element 2. The n type body region 24 may have an n type impurity concentration of 2×1016 cm−3 to 2×1017 cm−3.
The p+ type source region 25 is an impurity region formed at a surface part of the n type body region 24. The p+ type source region 25 may have a p type impurity concentration of 1×1021 cm−3 to 5×1021 cm−3.
The n+ type body contact region 26 is an impurity region that reaches the n type body region 24 from a surface of the p− type epitaxial layer 32 through the p+ type source region 25. As a result, the n type body region 24 is electrically connectable from the surface side of the p− type epitaxial layer 32 through the n+ type body contact region 26. The n+ type body contact region 26 may have an n type impurity concentration of 1×1021 cm−3 to 5×1021 cm−3.
A gate trench 59 that passes through the p+ type source region 25 and through the n type body region 24 from a surface of the semiconductor layer 22 and then reaches the p− type drain region 23 is formed at the semiconductor layer 22. The gate trench 59 may be formed in a grid-shaped manner or in a stripe manner in the surface part of the p− type epitaxial layer 32. As a result, the plurality of n type body regions 24 may be arranged in a matrix manner or in a stripe manner in a plan view. In the n type body region 24, a channel region 33 is formed at a side part of the gate trench 59.
The gate insulating film 27 is made of, for example, silicon oxide (SiO2), and is formed at an inner surface of the gate trench 59. The gate insulating film 27 is formed so as to extend to the outer peripheral region 41 in addition to the active region 40. In other words, an insulating film formed in the same process step is formed in the active region 40 and the outer peripheral region 41. Although the insulating film lying on the outer peripheral region 41 is called the gate insulating film 27 in the present preferred embodiment, the insulating film thereon may be called another name because the gate insulating film 27 does not contribute to the switching of a transistor structure.
The gate electrode 28 is made of, for example, polysilicon, and is embedded in the gate trench 59 with the gate insulating film 27 therebetween. The gate electrode 28 faces the channel region 33 with the gate insulating film 27 therebetween.
The voltage-regulator diode 29 is made of polysilicon in the present preferred embodiment, and is formed on the gate insulating film 27. It is possible to form the voltage-regulator diode 29 in the same process step as the gate electrode 28. As shown in FIG. 5, the voltage-regulator diode 29 is arranged as an outer peripheral diode formed at a peripheral edge of the semiconductor element 2 along the outer peripheral region 41. The voltage-regulator diode 29 serving as an outer peripheral diode may be disposed such that its whole is placed in the outer peripheral region 41, or may be disposed such that its part is placed in the outer peripheral region 41 whereas the remaining parts are placed in the active region 40 as shown in FIG. 4 and FIG. 5. In other words, the voltage-regulator diode 29 may be formed so as to extend between the active region 40 and the outer peripheral region 41.
The voltage-regulator diode 29 includes a p type portion 34 and an n type portion 35. The p type portion 34 and the n type portion 35 are each made of an impurity region in a polysilicon film, and the voltage-regulator diode 29 is made of the p type portion 34 and the n type portion 35 that serve as a pair and that are adjacent to each other. The p type portion 34 and the n type portion 35 are each formed in an annular shape that surrounds the active region 40. As a result, a pn junction portion 36 between these p and n type portions 34, 35 has an integral structure formed in an annular shape surrounding the active region 40. In the present preferred embodiment, the p type portion 34 and the n type portion 35 may have a width W1 and a width W2, respectively, that are equal to each other. Additionally, with respect to a disposition form, the n type portion 35 may be placed at a more inward side than the p type portion 34. The p type portion 34 is connected to the gate metal 9 as described later, and therefore it is possible to simplify a connection structure between the p type portion 34 and a gate finger 42 (described later) drawn around to the peripheral edge of the semiconductor element 2 by placing the p type portion 34 at an outer position. For example, it is only necessary to extend a contact directly downwardly from the gate finger 42.
The breakdown voltage Vz of the voltage-regulator diode 29 is set to be, for example, 10 V or less, preferably 6.8 V to 8 V. It is possible to realize the breakdown voltage Vz falling within this range, for example, by appropriately setting a p type impurity concentration of the p type portion 34 and an n type impurity concentration of the n type portion 35. For example, it is possible to realize it by setting the p type impurity concentration of the p type portion 34 at 1×1016 cm−3 to 1×1017 cm−3 and by setting the n type impurity concentration of the n type portion 35 at 1×1021 cm−3 to 5×1021 cm−3.
The interlayer insulating film 30 is made of, for example, silicon oxide (SiO2), and is formed on the p− type epitaxial layer 32 so as to cover the gate electrode 28 and the voltage-regulator diode 29. A contact hole 37 by which the p+ type source region 25 and the n+ type body contact region 26 are exposed, a contact hole 38 by which the p type portion 34 of the voltage-regulator diode 29 is exposed, and a contact hole 39 by which the n type portion 35 of the voltage-regulator diode 29 is exposed are formed in the interlayer insulating film 30.
The gate metal 9 and the source metal 10 are each made of an electrode film formed on the interlayer insulating film 30. It is possible to form the gate metal 9 and the source metal 10 by depositing a material for the electrode film (for example, a metal that includes Al) on the interlayer insulating film 30 according to a sputtering method or the like and then applying patterning, such as etching, to the electrode film. In other words, the gate metal 9 and the source metal 10 may be formed in the same process step.
The gate metal 9 includes a gate finger 42 and a gate pad 43.
As shown in FIG. 3, the gate finger 42 is formed in a substantially quadrangular ring shape along the peripheral edge of the semiconductor element 2 in a plan view, and the active region 40 is set in a region surrounded by the gate finger 42. The gate finger 42 is connected to the p type portion 34 of the voltage-regulator diode 29 through the contact hole 38. Additionally, the gate finger 42 is connected to the gate electrode 28 through a contact hole (not shown) formed in the interlayer insulating film 30.
The gate pad 43 is disposed at one corner portion of the gate finger 42. The gate pad 43 is formed so as to be integrally continuous with the gate finger 42. The first wire 6 mentioned above is connected to the gate pad 43.
The source metal 10 is disposed in a region surrounded by the gate finger 42 and the gate pad 43. The source metal 10 is separated from the gate finger 42 and from the gate pad 43 by means of a removal region 44 formed by etching the electrode film. The source metal 10 is connected to the p+ type source region 25 and to the n+ type body contact region 26 through the contact hole 37, and is connected to the n type portion 35 of the voltage-regulator diode 29 through the contact hole 39.
The drain electrode 11 is made of, for example, the same material as the gate metal 9 and as the source metal 10, and may be formed at the entire reverse surface of the p+ type substrate 31.
The semiconductor device 1 described above is usable as a protecting element of an IC (Integrated Circuit) mounted in general electronic equipment, such as a cellular phone, a smartphone, a digital camera, and a video camera, and is best suited to the cellular phone and the smartphone that will be facilitated to be reduced in size from the fact that the semiconductor device 1 is a comparatively small-sized semiconductor device.
Next, the operation of circuit protection by the semiconductor device 1 will be described with reference to FIG. 6. FIG. 6 is a view showing a part of a protection circuit to which the semiconductor device 1 of FIG. 1 is connected. The protection circuit diagram of FIG. 6 is merely one usage example of the semiconductor device 1, and the connection mode of the semiconductor device 1 is not limited to the arrangement of FIG. 6.
The protection circuit 45 shown in FIG. 6 includes an IC 46 and the semiconductor device 1.
For example, the IC 46 may be one of various general-purpose ICs, such as a power management IC and a transmission/reception control IC of a smartphone. The IC 46 has, for example, a power supply terminal 47 (Vcc), an output terminal 48 (OUT), and a ground terminal 49 (GND). The power supply terminal 47 is connected to a power source 50, and the ground terminal 49 is grounded to the ground potential.
The drain terminal D (the main lead 3 of FIG. 2) of the semiconductor device 1 is connected to the output terminal 48 of the IC 46, and the source terminal S (the second sub-lead 5 of FIG. 2) is connected to a load (not shown) as an output terminal (OUT) of the semiconductor device 1. The gate terminal G (the first sub-lead 4 of FIG. 2) of the semiconductor device 1 is grounded to the ground potential.
Referring to FIG. 6, in the protection circuit 45, a voltage by which the drain terminal D becomes positive (+) and by which the source terminal S becomes negative (−) is applied. In other words, a voltage by which the p− type drain region 23 becomes positive (+) and by which the p+ type source region 25 becomes negative (−) is applied, and therefore a forward bias is applied to a parasitic diode 51 built into the semiconductor element 2. As a result, an electric current flows from the drain-terminal-D side to the source-terminal-S side through the parasitic diode 51. The current flow from the drain-terminal-D side to the source-terminal-S side brings the source into a positive potential with respect to the gate (i.e., the gate becomes negative with respect to the source), and, as a result, a positive hole is induced in the n type channel region 33 (see FIG. 4) directly under the gate electrode 28, and the transistor reaches an ON state.
Here, FIG. 7 is a view to make a comparison between the power consumption of a MOSFET and that of a Schottky barrier diode (SBD). In FIG. 7, solid lines (1), (2), and (3) represent relationships between electric current and power consumption of a Schottky barrier diode of size 1006 (length×breadth=1.0 mm×0.6 mm), a Schottky barrier diode of size 2512 (length×breadth=2.5 mm×1.2 mm), and a p channel type MOSFET of size 0604 (length×breadth=0.6 mm×0.4 mm), respectively. As shown in FIG. 7, the Schottky barrier diodes of (1) and (2) are required to be enlarged from size 1006 to size 2512 in order to restrain the power consumption in accordance with the consumption current of an IC that is tending upward, whereas the MOSFET is low in power consumption although it has size 0604 that is considerably smaller than size 2512.
Therefore, if the semiconductor device 1 is used by being connected to the IC 46, it is possible to pass a forward current through a transistor structure that has a smaller loss and that is lower in power consumption than a diode, and therefore it is possible to employ a small-sized chip. As a result, it is possible to achieve space-saving if the semiconductor device 1 is used as a protecting element of the IC 46 of electronic equipment or the like.
On the other hand, if a load that is controlled by the IC 46 is inductive, a counter electromotive force occurs in the load when an electric current flowing through the load is shut off. Because of this counter electromotive force, there is a case in which a voltage by which the p+ type-source-region-25 side becomes positive (+) is applied between the p+ type source region 25 and the p− type drain region 23. In this case, a reverse bias is applied to the parasitic diode 51, and therefore an electric current does not flow through an internal circuit of the IC 46, and, as a result, it is possible to protect the IC 46. At this time, the reverse bias is also applied to the pn junction portion 36 of the voltage-regulator diode 29. Therefore, when the counter electromotive force of the load is large or when a large voltage, such as static electricity or surge voltage, is applied, the voltage-regulator diode 29 undergoes a Zener breakdown, and a reverse current flows to the gate side (ground potential side) through the voltage-regulator diode 29, and therefore it is possible to prevent a heavy electric current from flowing to the IC 46.
Accordingly, if the semiconductor device 1 is used as a protecting element of the IC 46 of electronic equipment or the like, it is possible to develop reverse voltage prevention and overvoltage protection with respect to the IC 46 although its power consumption is low, and therefore it is possible to maintain a protective function as a protecting element. Moreover, the transistor structure and the voltage-regulator diode 29 are unified into a single-chip configuration, and therefore it is possible to achieve more excellent space-saving than in a case in which these structure and diode are mounted as different chips.
On the other hand, the power consumption becomes higher in proportion to a decrease in size of the diode as shown in FIG. 7, and therefore, in the semiconductor device 1 that has been reduced in size, it is preferable to consider the power consumption (loss) of the voltage-regulator diode 29.
Here, referring to FIG. 8 and FIG. 9, a description will be given of the loss reduction of the voltage-regulator diode 29 in the semiconductor device 1 according to the present preferred embodiment. FIG. 8 is a view to describe a difference between the effective area of an outer peripheral diode and that of a pad diode. FIG. 9 is a view to make a comparison between the power consumption of the outer peripheral diode and that of the pad diode. In FIG. 8, a flat-surface arrangement of the semiconductor element 2 required to be described in this section is emphatically shown, and therefore FIG. 8 differs from FIG. 1 in magnitude, shape, etc.
As shown in FIG. 8, in the semiconductor element 61 depicted on the left side of the drawing sheet, the voltage-regulator diode 29 is arranged as a pad diode formed at an outer periphery of the gate pad 43. On the other hand, the semiconductor element 2 depicted on the right side of the drawing sheet is arranged as the outer peripheral diode described above. In this case, if the voltage-regulator diode 29 is arranged as the outer peripheral diode, the area of the pn junction portion 36 (see FIG. 4 and FIG. 5) makes an increase of 50%, for example, with respect to a case in which the voltage-regulator diode 29 is arranged as the pad diode although it depends on the size of the semiconductor element 2, the size of the gate pad 43, or the size of the like. As a result, it is possible to reduce the junction resistance of the pn junction portion 36, and hence is possible to reduce the power consumption from 101 mW to 84 mW as shown in FIG. 9. In other words, it is possible to reduce a loss in the voltage-regulator diode 29, and hence is possible to prevent the voltage-regulator diode 29 from undergoing a thermal breakdown, and is possible to raise the reliability of the semiconductor device 1. Concrete numerical values of the power consumption shown in FIG. 9 are an example mentioned to describe the effect of the loss reduction.
While it is possible to reduce the loss of the voltage-regulator diode 29, the voltage-regulator diode 29 is disposed so as to surround the active region 40, and therefore the disposition region of a cell having a transistor structure is further limited than in a case in which the pad diode is employed. For example, if the area of the pn junction portion is increased by 50%, a decrease of 20% will be anticipated with respect to the area of the active region 40.
However, the anticipated value of a reduction of the area of the active region 40 in FIG. 8 is based on the structure of the semiconductor element in which a two-way Zener diode 52 is mounted in order to protect a transistor structure like an ESD protection diode shown as a reference structure of FIG. 10A. In this structure, a two-way Zener diode 52 has a repetitive structure of a plurality of p type portions 53 and n type portions 54, and therefore a comparatively-wide diode disposition space is required.
On the other hand, the voltage-regulator diode 29 of the present preferred embodiment is composed of the p type portion 34 and the n type portion 35 that are adjacent to each other and that serve as a pair as shown in FIG. 10B, and therefore it is possible to narrow the diode disposition space, and it is possible to allot a space corresponding to a reduction created by the narrowness for a cell disposition space having a transistor structure. As a result, as shown in FIG. 11, it is possible to reduce the power consumption of the transistor (MOSFET) by, for example, 17%, and it is also possible to keep the power consumption of the transistor at a low level. Additionally, the voltage-regulator diode 29 composed of the p and n type portions 34 and 35 serving as a pair makes it possible to make the breakdown voltage Vz lower than the two-way Zener diode 52.
As an example, the voltage-regulator diode according to one preferred embodiment of the present invention may be a voltage-regulator diode 58 composed of a p+ type impurity region 55 and an n type impurity region 56 both of which serve as a pair and both of which are disposed in the p− type epitaxial layer 32 like a semiconductor element 62 of FIG. 13. In FIG. 13, an n+ type impurity region 57 formed at a surface part of the n type impurity region 56 is an impurity region to make contact with the n type impurity region 56.
Additionally, the voltage-regulator diode 29 may be made of a repetitive structure of the p type portion 34 and the n type portion 35 that are alternately disposed along the outer peripheral region 41 as shown in FIG. 14. In this case, there is a need to, from the source side and from the gate side, make contact with each of the plurality of p type portions 34 and n type portions 35 separated from each other.
Additionally, the transistor structure of the semiconductor element 2 may be a trench planar gate structure without being limited to the trench gate structure.
Next, other preferred embodiments of the semiconductor device will be described. FIG. 15 is a perspective view of a semiconductor device 71 according to another preferred embodiment of the present invention. FIG. 16 is a front view of the semiconductor device 71. FIG. 17 is a back view of the semiconductor device 71. FIG. 18 is a plan view of the semiconductor device 71. FIG. 19 is a bottom view of the semiconductor device 71. FIG. 20 is a right side view of the semiconductor device 71. FIG. 21 is a left side view of the semiconductor device 71. FIG. 22 is a view showing a cross section in a cutting plane along line XXII-XXII of FIG. 18.
The semiconductor device 71 has a package structure of WL-CSP (Wafer Level-Chip Size Package). In other words, the semiconductor device 71 has a structure in which the semiconductor element 2 described above is used as a chip size level package, and includes a semiconductor substrate 72 formed in a rectangular shape in a plan view as an example of the semiconductor layer 22 described above, and is formed in substantially the same size as the external shape size of the semiconductor substrate 72.
For example, as shown in FIG. 15, the length L of the semiconductor device 71 is less than 0.50 mm (preferably, 0.40 mm or more), the width W thereof is less than 0.40 mm (preferably, 0.30 mm or more), and the thickness D thereof is less than 0.15 mm (preferably, 0.10 mm or more).
For example, if the length L of the semiconductor device 71 is 0.50 mm and if the width W thereof is 0.40 mm, the plane area of the semiconductor device 71 is 0.20 mm2. If the length L of the semiconductor device 71 is 0.40 mm and if the width W thereof is 0.30 mm, the plane area of the semiconductor device 71 is 0.12 mm2. In other words, the semiconductor device 71 has a very small package structure of size 0403.
From the fact that the thickness of the semiconductor device 71 is less than 0.15 mm, it is possible to reduce the amount of protrusion from an ordinary position of a side surface of the semiconductor device 71 even if the semiconductor device 71 is inclinedly mounted. This makes it possible to prevent the semiconductor device 71 from making contact with an adjoining semiconductor device even when the semiconductor device 71 is mounted at a high density.
When a description is hereinafter given of the shape and size of the semiconductor device 71, of the shape and size of the semiconductor substrate 72, of the disposition positions of other components, and of the like, the subject of this description may be replaced with another from the fact that the semiconductor device 71 has the package structure of WL-CSP. For example, the semiconductor substrate 72 formed in a quadrangular shape in a plan view may be replaced with the semiconductor device 71 formed in a quadrangular shape in a plan view. The description of a pad being disposed at a peripheral edge of the semiconductor substrate 72 may be replaced with the description of a pad being disposed at a peripheral edge of the semiconductor substrate 71.
The semiconductor substrate 72 formed in a rectangular parallelepiped shape may have an obverse surface 72A, a reverse surface 72B on the side opposite to the obverse surface 72A, and four side surfaces 72C, 72D, 72E, and 72F between the obverse surface 72A and the reverse surface 72B, and the obverse surface 72A and the side surfaces 72C to 72F may be covered with a surface insulating film (not shown). Among the four side surfaces 72C to 72F of the semiconductor substrate 72, the side surfaces 72C and 72E are side surfaces along long sides 121 of the semiconductor substrate 72, respectively, and the side surfaces 72D and 72F are side surfaces along short sides 122 of the semiconductor substrate 72, respectively. Corner portions 74CD, 74DE, 74EF, and 74FC of the semiconductor substrate 72 are formed at intersection portions of adjoining side surfaces 72C to 72F, respectively.
In the obverse surface 72A of the semiconductor substrate 72, a drain pad 77 (first pad) is disposed at a first peripheral edge portion 75 along the side surface 72C on the long-side-121 side. The drain pad 77 is formed at a middle apart from the corner portions 74CD and 74FC of both ends of the first peripheral edge portion 75, and a region of a predetermined interval (e.g., about 0.1 mm to 0.15 mm) is provided between the drain pad 77 and each of the corner portions 74CD and 74FC.
On the other hand, a source pad 78 (second pad) is disposed at the corner portion 74EF of an end of the second peripheral edge portion 76 of the semiconductor substrate 72 that faces the first peripheral edge portion 75, and a gate pad 79 (third pad) is disposed at the corner portion 74DE of the other end of the second peripheral edge portion 76.
Next, a description will be given of the layout and shape of the drain pad 77, the layout and shape of the source pad 78, and the layout and shape of the gate pad 79.
The drain pad 77 is disposed in an outer region of a first circular arc 80 and in an outer region of a second circular arc 81. The first circular arc 80 has a radius equal to the length (width W of FIG. 15) of the short side 122 of the semiconductor substrate 72. A center of the first circular arc 80 is coincided with a vertex V1 of the corner portion 74EF of the end of the second peripheral edge portion 76. The second circular arc 81 has a radius equal to the length (width W of FIG. 15) of the short side 122 of the semiconductor substrate 72. A center of the second circular arc 81 is coincided with a vertex V2 of the corner portion 74DE of the other end of the second peripheral edge portion 76. The first and second circular arc 80, 81 are virtual lines which are depicted on the obverse surface 72A of the semiconductor substrate 72 as shown in FIG. 18. The drain pad 77 is formed in a triangular shape having two sides that are a pair of tangents drawn to the first and second circular arcs 80 and 81, respectively, from an intersection 82 between the first circular arc 80 and the second circular arc 81 in those outer regions.
On the other hand, the source pad 78 is formed in a sectorial shape that has the same center as the first circular arc 80. The radius R1 of the source pad 78 is, for example, 0.07 mm to 0.13 mm (preferably, 0.10 mm or more). For example, if the radius R1 is 0.07 mm, the area of the source pad 78 is 3.85×10−3 mm2, and, if the radius R1 is 0.10 mm, the area of the source pad 78 is 7.85×10−3 mm2.
The gate pad 79 is formed in a sectorial shape that has the same center as the second circular arc 81. The radius R2 of the gate pad 79 is, for example, 0.07 mm to 0.13 mm (preferably, 0.10 mm or more). For example, if the radius R2 is 0.07 mm, the area of the gate pad 79 is 3.85×10−3 mm2. If the radius R2 is 0.10 mm, the area of the gate pad 79 is 7.85×10−3 mm2.
A drain wiring film 83, a source wiring film 84, and a gate wiring film 85 are disposed between the drain pad 77, the source pad 78, the gate pad 79, and the semiconductor substrate 72, respectively. These films are each made of a metallic layer, such as AlCu layer, and a barrier layer (e.g., Ti, TiN, etc.) may be formed on the obverse surface and the reverse surface of the layer if needed. The drain wiring film 83, the source wiring film 84, and the gate wiring film 85 may be electrically connected to the p− type drain region 23, to the p+ type source region 25, and to the gate electrode 28 mentioned above, respectively.
As shown in FIG. 18, the gate wiring film 85 is formed in a sectorial shape in a plan view that is a similar figure larger than the gates pad 79.
As shown in FIG. 18, the source wiring film 84 is formed so as to cover substantially half the region on the second-peripheral-edge-portion-76 side of the semiconductor substrate 72. In detail, it is formed on the side-surface-72F side in the longitudinal direction and on the side-surface-72C side in the width direction with respect to the gate wiring film 85 so as to avoid the gate wiring film 85. Therefore, the gate wiring film 85 formed in a sectorial shape in a plan view has its circular arc part adjacent to the source wiring film 84.
As shown in FIG. 18, the drain wiring film 83 is formed so as to cover substantially half the region on the first-peripheral-edge-portion-75 side of the semiconductor substrate 72. As a result, the source wiring film 84 and the drain wiring film 83 are respectively made of wiring films substantially equal in area to each other, and it is possible to make the wiring resistance on the source side and the wiring resistance on the drain side substantially equal to each other.
Next, referring to FIG. 23, a description will be given of how much the mounting area of the semiconductor device 71 can be reduced by the layout and shape of the drain pad 77, the layout and shape of the source pad 78, and the layout and shape of the gate pad 79 mentioned above.
FIG. 23 is a view to make a comparison between the chip size of the semiconductor device 71 and that of a semiconductor device 100 according to a reference example. For clarification, only reference signs necessary for a comparison among the reference signs of FIG. 15 to FIG. 22 are shown in FIG. 23, and the other reference signs are excluded.
First, if the source pad 78 and the gate pad 79 are disposed adjacently to each other in the short side 122 of the semiconductor substrate 72 as in the semiconductor device 100 of the reference example, the package size of the semiconductor device 100 is, for example, length L=0.6 mm and width W=0.4 mm. The reason is that at least a pitch P of 0.2 mm is secured as a distance between the source pad 78 and the gate pad 79 in order to avoid a source-to-gate short circuit in the short-side direction. Additionally, the drain pad 77 is formed in a shape from a corner portion at an end to a corner portion at the other end of the short side 122. Therefore, if the package size is reduced without changing the pad layout, the source-to-gate pitch P will become below 0.2 mm, and the problem of a source-to-gate short circuit will be caused when mounted. On the other hand, even if the source pad 78 and the gate pad 79 are disposed adjacently to each other in the long side 121, it is difficult to resolve the problem of a short circuit between the pads. The reason is that, in this pad layout, the drain pad 77 assumes a shape from a corner portion at an end to a corner portion at the other end of the long side 121 as shown by reference sign “77′” and the broken line. Therefore, as a result of the decrease of the package size, the problem of a source-to-drain short circuit or of a gate-to-drain short circuit is caused.
On the other hand, in the arrangement of the semiconductor device 71 mentioned above, the source pad 78 and the gate pad 79 are disposed adjacently to each other in the long side 121. Additionally, the drain pad 77 is disposed at the middle of the long side 121 of the semiconductor substrate 72, and a region of a predetermined interval is provided between the drain pad 77 and each of the corner portions 74CD and 74FC at both ends of the long side 121. This makes it possible to make a distance (pitch P1) between the drain pad 77 and the source pad 78 and a distance (pitch P2) between the drain pad 77 and the gate pad 79 longer than in the semiconductor device 100 of the reference example. Therefore, even if the package size of the semiconductor device 71 is reduced to be, for example, length L=0.44 mm and width W=0.32 mm, it is possible to keep the pitch P1 and the pitch P2 at 0.2 mm equal to the source-to-gate pitch P in the semiconductor device 100. In other words, the distance to be secured between the pads is 0.20/0.32=62.5% or more of the short side 122 of the package of the semiconductor device 71. If the short side 122 of the package is at least 0.40 mm, the distance to be secured between the pads is 0.20/0.40=50% or more of the short side 122 of the package of the semiconductor device 71. Additionally, if the package size of the semiconductor device 71 is 1.41×10−1 mm2 and if the pad radiuses R1 and R2 are each 0.10 mm, the pad area is 7.85×10−3 mm2, and therefore the area (pad area) of the source pad 78 and that of the gate pad 79 are each 5% or more of the package size. Therefore, it is possible to make the size of the semiconductor substrate smaller than the size of the semiconductor device 100 while avoiding a short circuit when mounted. This makes it possible to provide a semiconductor device reduced in size.
Additionally, in the semiconductor device 71, the drain pad 77 is disposed in the outer regions of the first and second circular arcs 80 and 81 each of which has a radius equal to the length of the short side 122 as shown in FIG. 18. Therefore, it is possible to secure a length corresponding to at least a difference between the length of the short side 122 of the semiconductor device 71 and each magnitude (width) of the source and gate pads 78 and 79 as the pitch P1 and as the pitch P2. Additionally, the drain pad 77 is formed in a triangular shape having two sides that are a pair of tangents drawn to the first and second circular arcs 80 and 81, respectively, from the intersection 82 between the first circular arc 80 and the second circular arc 81. This makes it possible to secure a junction area large enough for the drain pad 77 while reducing the semiconductor device 71 in size. Therefore, it is also possible to restrain the fastening strength from being weakened when the semiconductor device 71 is mounted.
With respect to the secureness of the fastening strength when the semiconductor device 71 is mounted, furthermore, the source pad 78 and the gate pad 79 are formed in sectorial shapes that have the same centers as the first and second circular arcs 80 and 81, respectively. This makes it possible to secure a junction area large enough for each of the source and gate pads 78 and 79 while securing a length of 0.2 mm as each of the pitches P1 and P2.
As described above, according to the semiconductor device 71, it is possible to reduce the mounting area by about 40% in comparison with the semiconductor device 100 of the reference example while sufficiently securing a pitch between the adjoining pads and a junction area of the pads.
Although one preferred embodiment of the present invention has been described as above, the present invention can be embodied in other modes.
For example, in the package form shown in FIG. 15 to FIG. 22, a lateral MISFET in which a source region and a drain region with an interval therebetween are disposed in the lateral direction along the obverse surface 72A may be formed on the semiconductor substrate 72.
Besides, various design changes can be made within the scope of the subject matter described in the claims.

Claims (17)

What is claimed is:
1. A semiconductor device comprising:
a semiconductor layer that has a transistor structure including a source region of a first conductivity type, a drain region of the first conductivity type, a body region of a second conductivity type between the source region and the drain region, and a gate electrode facing the body region; and
a voltage-regulator diode disposed at the semiconductor layer, the voltage-regulator diode having a first portion of the second conductivity type connected to the source region through a first conductive path made of a first metal member and a second portion of the first conductivity type electrically connected to the gate electrode through a second conductive path made of a second metal member electrically separated from the first conductive path, the voltage-regulator diode having a capability allowing a reverse current to flow only in a first direction,
wherein the transistor structure and the voltage-regulator diode are unified into a single-chip configuration, and
the first metal member and the second metal member are in direct contact with the first portion and the second portion, respectively.
2. The semiconductor device according to claim 1, wherein the semiconductor layer includes an active region including the transistor structure and an outer peripheral region surrounding the active region, and
the voltage-regulator diode includes an outer peripheral diode disposed along the outer peripheral region.
3. The semiconductor device according to claim 2, wherein, in the outer peripheral diode, the second portion and the first portion are each formed in an annular shape surrounding the active region, and
a pn junction portion between the second portion and the first portion has an integral structure formed in an annular shape surrounding the active region.
4. The semiconductor device according to claim 3, wherein the second portion and the first portion each have a width equal to each other.
5. The semiconductor device according to claim 3, wherein, in the outer peripheral diode, the first portion is disposed at a more inward side than the second portion.
6. The semiconductor device according to claim 1, wherein the voltage-regulator diode is made of polysilicon stacked on the semiconductor layer.
7. The semiconductor device according to claim 6, wherein the transistor structure includes a trench gate structure made of polysilicon as the gate electrode embedded in a gate trench which is formed at the semiconductor layer.
8. The semiconductor device according to claim 1, wherein the voltage-regulator diode is made of an impurity region disposed in the semiconductor layer.
9. The semiconductor device according to claim 1, wherein a breakdown voltage of the voltage-regulator diode is 8 V or less.
10. The semiconductor device according to claim 1, the semiconductor device having a length-breadth chip size of 0.6 mm×0.4 mm or less.
11. The semiconductor device according to claim 2, wherein
the second metal member includes a gate finger surrounding the active region, and
the second portion is in direct contact with the gate finger.
12. The semiconductor device according to claim 1, wherein
the first conductive path includes a source metal connected to the source region and the body region, and
the second metal member includes a gate finger surrounding the source metal.
13. A semiconductor device comprising:
a semiconductor layer that has a transistor structure including a source region of a first conductivity type, a drain region of the first conductivity type, a body region of a second conductivity type between the source region and the drain region, and a gate electrode facing the body region; and
a voltage-regulator diode disposed at the semiconductor layer, the voltage-regulator diode having a first portion of the second conductivity type connected to the source region through a first conductive path and a second portion of the first conductivity type electrically connected to the gate electrode by a metal member through a second conductive path electrically separated from the first conductive path,
wherein the transistor structure and the voltage-regulator diode are unified into a single-chip configuration,
the first conductive path includes a source metal connected to the source region and the body region and the source metal is in direct contact with the first portion, and
the metal member includes a gate finger surrounding the source metal and the gate finger is in direct contact with the second portion.
14. The semiconductor device according to claim 13, wherein the semiconductor layer includes an active region including the transistor structure and an outer peripheral region surrounding the active region, and
the voltage-regulator diode includes an outer peripheral diode disposed along the outer peripheral region.
15. The semiconductor device according to claim 14, wherein, in the outer peripheral diode, the second portion and the first portion are each formed in an annular shape surrounding the active region, and
a pn junction portion between the second portion and the first portion has an integral structure formed in an annular shape surrounding the active region.
16. The semiconductor device according to claim 13, wherein the voltage-regulator diode is made of polysilicon stacked on the semiconductor layer.
17. The semiconductor device according to claim 13, wherein the voltage-regulator diode is made of an impurity region disposed on the semiconductor layer.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220069119A1 (en) * 2016-05-18 2022-03-03 Rohm Co., Ltd. Semiconductor device with unified transistor structure and voltage regulator diode

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10692863B2 (en) * 2016-09-30 2020-06-23 Rohm Co., Ltd. Semiconductor device and semiconductor package
JP6988518B2 (en) * 2018-01-26 2022-01-05 株式会社デンソー Rectifier and rotary machine
CN117012808A (en) * 2018-03-29 2023-11-07 罗姆股份有限公司 Semiconductor device with a semiconductor device having a plurality of semiconductor chips
JP7135445B2 (en) * 2018-05-29 2022-09-13 富士電機株式会社 semiconductor equipment
JP7172317B2 (en) 2018-09-11 2022-11-16 富士電機株式会社 semiconductor equipment
JP7291495B2 (en) * 2019-02-12 2023-06-15 ローム株式会社 semiconductor equipment
JP7234713B2 (en) 2019-03-14 2023-03-08 富士電機株式会社 semiconductor equipment

Citations (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174672A (en) 1985-01-29 1986-08-06 Nissan Motor Co Ltd Vmos transistor
US4992844A (en) 1987-01-23 1991-02-12 Kabushiki Kaisha Toshiba Semiconductor device
US5488236A (en) 1994-05-26 1996-01-30 North Carolina State University Latch-up resistant bipolar transistor with trench IGFET and buried collector
US5548152A (en) 1993-06-17 1996-08-20 Nec Corporation Semiconductor device with parallel-connected diodes
US5886515A (en) 1997-02-19 1999-03-23 U.S. Philips Corporation Power semiconductor devices with a temperature sensor circuit
JP2001326354A (en) 2000-03-06 2001-11-22 Rohm Co Ltd Semiconductor device
US20010045598A1 (en) 1999-10-27 2001-11-29 Jacek Korec Method of fabricating trench-gated power MOSFET
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US20020175367A1 (en) * 2001-05-22 2002-11-28 Fwu-Iuan Hshieh Trench DMOS transistor having a zener diode for protection from electro-static discharge
US6495866B2 (en) 2000-10-31 2002-12-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device for preventing an increased clamp voltage in an ignition circuit
US20040070047A1 (en) 2001-05-25 2004-04-15 Gourab Majumdar Power semiconductor device
US20060163658A1 (en) * 2005-01-21 2006-07-27 Anderson Samuel J Monolithic MOSFET and schottky diode for mobile phone boost converter
US20060208340A1 (en) * 2005-03-15 2006-09-21 Glenn Jack L Protection device for handling energy transients
US20060237786A1 (en) 2005-04-22 2006-10-26 Kabushiki Kaisha Toshiba Power semiconductor device
US20060261391A1 (en) 2005-05-20 2006-11-23 Yoshito Nakazawa Semiconductor device and manufacturing method of the same
US20100046263A1 (en) 2008-08-19 2010-02-25 Infineon Technologies Austria Ag Rectifier circuit with a voltage sensor
CN101794779A (en) 2009-01-29 2010-08-04 三洋电机株式会社 Insulated gate semiconductor device
US20100224931A1 (en) * 2008-02-23 2010-09-09 Force Mos Technology Co. Ltd. Trench moseft with trench gates underneath contact areas of esd diode for prevention of gate and source shortage
JP2011166673A (en) 2010-02-15 2011-08-25 Denso Corp Hybrid power device
JP2012154119A (en) 2011-01-27 2012-08-16 Aisin Seiki Co Ltd Vehicular door handle device
WO2012111285A1 (en) 2011-02-17 2012-08-23 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Insulated gate semiconductor device
US20120326207A1 (en) * 2011-06-08 2012-12-27 Rohm Co., Ltd. Semiconductor device and manufacturing method
US20130234238A1 (en) * 2012-03-12 2013-09-12 Force Mos Technology Co., Ltd. Semiconductor power device integrated with esd protection diodes
JP2014017701A (en) 2012-07-10 2014-01-30 Aisin Seiki Co Ltd Antenna drive apparatus
JP2014123665A (en) 2012-12-21 2014-07-03 Fujitsu Ltd Semiconductor device, method of manufacturing the same, power-supply device, and high-frequency amplifier
CN104538395A (en) 2015-01-08 2015-04-22 电子科技大学 Power VDMOS device and diode parallel type ESD protection mechanism
US20150145025A1 (en) 2013-11-22 2015-05-28 Renesas Electronics Corporation Semiconductor device
US20150179633A1 (en) 2013-12-23 2015-06-25 Infineon Technologies Austria Ag Reverse Blocking Transistor Device
US20150325504A1 (en) 2014-05-12 2015-11-12 Rohm Co., Ltd. Semiconductor device
US20150372086A1 (en) 2014-06-20 2015-12-24 Infineon Technologies Austria Ag Semiconductor Switching Device with Different Local Threshold Voltage
US20160056144A1 (en) 2013-06-12 2016-02-25 Fuji Electric Co., Ltd. Manufacturing method of semiconductor device
US20160079232A1 (en) 2014-09-11 2016-03-17 Kabushiki Kaisha Toshiba Semiconductor device
US20160126235A1 (en) 2012-08-09 2016-05-05 Fuji Electric Co., Ltd. Semiconductor device and method for producing the same
US10522674B2 (en) * 2016-05-18 2019-12-31 Rohm Co., Ltd. Semiconductor with unified transistor structure and voltage regulator diode

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015528A (en) * 1999-06-29 2001-01-19 Sanyo Electric Co Ltd Semiconductor device
JP2002208702A (en) * 2001-01-10 2002-07-26 Mitsubishi Electric Corp Power semiconductor device
JP2005340550A (en) * 2004-05-28 2005-12-08 Sanyo Electric Co Ltd Semiconductor device
US20070176239A1 (en) * 2006-01-31 2007-08-02 M-Mos Semiconductor Sdn. Bhd. Trenched MOSFETS with improved ESD protection capability
CN103384639B (en) * 2011-02-10 2017-05-10 埃普科斯股份有限公司 Mems device comprising an under bump metallization
JP5807722B2 (en) * 2012-08-09 2015-11-10 富士電機株式会社 Semiconductor device and manufacturing method thereof

Patent Citations (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174672A (en) 1985-01-29 1986-08-06 Nissan Motor Co Ltd Vmos transistor
US4992844A (en) 1987-01-23 1991-02-12 Kabushiki Kaisha Toshiba Semiconductor device
US5548152A (en) 1993-06-17 1996-08-20 Nec Corporation Semiconductor device with parallel-connected diodes
US5488236A (en) 1994-05-26 1996-01-30 North Carolina State University Latch-up resistant bipolar transistor with trench IGFET and buried collector
US5886515A (en) 1997-02-19 1999-03-23 U.S. Philips Corporation Power semiconductor devices with a temperature sensor circuit
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US20010045598A1 (en) 1999-10-27 2001-11-29 Jacek Korec Method of fabricating trench-gated power MOSFET
JP2001326354A (en) 2000-03-06 2001-11-22 Rohm Co Ltd Semiconductor device
US6495866B2 (en) 2000-10-31 2002-12-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device for preventing an increased clamp voltage in an ignition circuit
US20020175367A1 (en) * 2001-05-22 2002-11-28 Fwu-Iuan Hshieh Trench DMOS transistor having a zener diode for protection from electro-static discharge
US20040070047A1 (en) 2001-05-25 2004-04-15 Gourab Majumdar Power semiconductor device
US20060163658A1 (en) * 2005-01-21 2006-07-27 Anderson Samuel J Monolithic MOSFET and schottky diode for mobile phone boost converter
US20060208340A1 (en) * 2005-03-15 2006-09-21 Glenn Jack L Protection device for handling energy transients
US20060237786A1 (en) 2005-04-22 2006-10-26 Kabushiki Kaisha Toshiba Power semiconductor device
US20060261391A1 (en) 2005-05-20 2006-11-23 Yoshito Nakazawa Semiconductor device and manufacturing method of the same
US20100224931A1 (en) * 2008-02-23 2010-09-09 Force Mos Technology Co. Ltd. Trench moseft with trench gates underneath contact areas of esd diode for prevention of gate and source shortage
US20100046263A1 (en) 2008-08-19 2010-02-25 Infineon Technologies Austria Ag Rectifier circuit with a voltage sensor
CN101794779A (en) 2009-01-29 2010-08-04 三洋电机株式会社 Insulated gate semiconductor device
JP2011166673A (en) 2010-02-15 2011-08-25 Denso Corp Hybrid power device
JP2012154119A (en) 2011-01-27 2012-08-16 Aisin Seiki Co Ltd Vehicular door handle device
WO2012111285A1 (en) 2011-02-17 2012-08-23 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Insulated gate semiconductor device
US20120326207A1 (en) * 2011-06-08 2012-12-27 Rohm Co., Ltd. Semiconductor device and manufacturing method
US20130234238A1 (en) * 2012-03-12 2013-09-12 Force Mos Technology Co., Ltd. Semiconductor power device integrated with esd protection diodes
JP2014017701A (en) 2012-07-10 2014-01-30 Aisin Seiki Co Ltd Antenna drive apparatus
US20160126235A1 (en) 2012-08-09 2016-05-05 Fuji Electric Co., Ltd. Semiconductor device and method for producing the same
JP2014123665A (en) 2012-12-21 2014-07-03 Fujitsu Ltd Semiconductor device, method of manufacturing the same, power-supply device, and high-frequency amplifier
US20160056144A1 (en) 2013-06-12 2016-02-25 Fuji Electric Co., Ltd. Manufacturing method of semiconductor device
US20150145025A1 (en) 2013-11-22 2015-05-28 Renesas Electronics Corporation Semiconductor device
US20150179633A1 (en) 2013-12-23 2015-06-25 Infineon Technologies Austria Ag Reverse Blocking Transistor Device
US20150325504A1 (en) 2014-05-12 2015-11-12 Rohm Co., Ltd. Semiconductor device
US20150372086A1 (en) 2014-06-20 2015-12-24 Infineon Technologies Austria Ag Semiconductor Switching Device with Different Local Threshold Voltage
US20160079232A1 (en) 2014-09-11 2016-03-17 Kabushiki Kaisha Toshiba Semiconductor device
CN104538395A (en) 2015-01-08 2015-04-22 电子科技大学 Power VDMOS device and diode parallel type ESD protection mechanism
US10522674B2 (en) * 2016-05-18 2019-12-31 Rohm Co., Ltd. Semiconductor with unified transistor structure and voltage regulator diode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Office Action issued for Chinese Patent Application No. 201710353342.5, dated Apr. 2, 2020, 16 pages including English translation.
Office Action issued for Japanese Patent Application No. 2017-079993, dated Feb. 4, 2021, 6 pages including English translation.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220069119A1 (en) * 2016-05-18 2022-03-03 Rohm Co., Ltd. Semiconductor device with unified transistor structure and voltage regulator diode
US11955544B2 (en) * 2016-05-18 2024-04-09 Rohm Co., Ltd. Semiconductor with unified transistor structure and voltage regulator diode

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US11955544B2 (en) 2024-04-09
US20220069119A1 (en) 2022-03-03
CN107403831B (en) 2021-01-15
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US20200105924A1 (en) 2020-04-02
US20170338336A1 (en) 2017-11-23

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