US11133193B2 - Plasma processing device and method of adjusting an edge ring of a plasma processing device - Google Patents

Plasma processing device and method of adjusting an edge ring of a plasma processing device Download PDF

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US11133193B2
US11133193B2 US16/748,997 US202016748997A US11133193B2 US 11133193 B2 US11133193 B2 US 11133193B2 US 202016748997 A US202016748997 A US 202016748997A US 11133193 B2 US11133193 B2 US 11133193B2
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edge ring
processing device
plasma processing
compensatory
lift
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US20210118685A1 (en
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Yongchul Ko
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Xia Tai Xin Semiconductor Qing Dao Ltd
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Xia Tai Xin Semiconductor Qing Dao Ltd
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Assigned to XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD. reassignment XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KO, Yongchul
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the subject matter herein generally relates to a semiconductor processing device and a method of using the same, and more particularly to a plasma processing device and a method of adjusting an edge ring of the plasma processing device.
  • Edge rings are also often used in some plasma processes, and corrosion of the edge rings increases as the plasma device is used. When the corrosion of the edge ring reaches a certain level, in order to ensure the effectiveness of plasma processing, the edge ring needs to be replaced.
  • FIG. 1 is a cross-sectional view of an embodiment of a plasma processing device.
  • FIG. 2 is a flowchart of an embodiment of a method of adjusting an edge ring of a plasma processing device.
  • FIG. 3 is a cross-sectional view of an embodiment of the plasma processing device of FIG. 1 in another state.
  • FIG. 4 is a cross-sectional view of an embodiment of the plasma processing device of FIG. 1 in yet another state.
  • FIG. 1 illustrates an embodiment of a plasma processing device 100 .
  • the plasma processing device 100 includes an electrostatic chuck 10 , a base ring 20 , an edge ring 30 , a lift assembly 40 , and a sensor 50 .
  • the electrostatic chuck 10 supports a substrate 200 undergoing processing, the substrate 200 may be a wafer for example.
  • the base ring 20 surrounds the electrostatic chuck 10 .
  • the edge ring 30 is disposed on the base ring 20 . In some embodiments, the edge ring 30 is located on an upper surface 21 of the base ring 20 , surrounds the substrate 200 , and extends toward the substrate 200 .
  • the electrostatic chuck 10 may be made of aluminum oxide, the base ring 20 may be made of a ceramic material. In some embodiments, the electrostatic chuck 10 and the base ring 20 may be made of other materials.
  • the base ring 20 further includes a lower surface 23 facing away from the upper surface 21 . At least one through hole 25 is defined to penetrate the upper surface 21 and the lower surface 23 . Each through hole 25 is arranged corresponding to the edge ring 30 .
  • the lift assembly 40 includes at least one lift pin 41 and at least one driver 43 .
  • Each lift pin 41 can be movably passed through the through hole 25 .
  • the at least one driver 43 is connected to the at least one lift pin 41 to drive the at least one lift pin 41 to move upwards and downwards along the through hole 25 , thereby controlling the edge ring 30 to rise and fall.
  • a connection between the at least one driver 43 and the at least one lift pin 41 may be a direct connection or an indirect connection.
  • the at least one driver 43 may drive the at least one lift pin 41 by lift rods 431 or by air pressure.
  • the sensor 50 is disposed between the at least one driver 43 and the at least one lift pin 41 , and the sensor 50 detects a weight of the edge ring 30 when the edge ring 30 is raised to a preset position by the at least one lift pin 41 .
  • the preset position is above the upper surface 21 of the base ring 20 .
  • the preset position is spaced from the upper surface 21 .
  • the preset position and the upper surface 21 are not arranged at the same plane.
  • the sensor 50 is located under a bottom of the at least one lift pin 41 .
  • a gap 60 is defined between each lift pin 41 and the edge ring 30 when the at least one lift pin 41 is at a starting position.
  • a distance of the gap 60 is 0.5-1.0 cm when the at least one lift pin 41 is at a starting position.
  • the lift assembly 40 includes at least two lift pins 41 and the lift pins 41 are integrally formed. In some embodiments, the lift pins 41 may be independent of each other. In this illustrated embodiment, the lift pins 41 are integrally formed.
  • the plasma processing device 100 may further include a processor 70 .
  • the processor 70 is electrically connected to the at least one driver 43 and the sensor 50 .
  • the processor 70 controls the at least one driver 43 to drive the at least one lift pin 41 to move upwards and downwards, thereby controlling the edge ring 30 to rise and fall.
  • the processor 70 also receives signals as to the weight of the edge ring 30 , detected by the sensor 50 .
  • the plasma processing device 100 may further include a displayer 80 for displaying the weight of the edge ring 30 , so that a user may determine whether to replace the edge ring 30 according to the weight of the edge ring 30 displayed by the displayer 80 , and also may be warned in advance to determine how long it will take before replacing the edge ring 30 .
  • the plasma processing device 100 may further include an alarm 90 .
  • the alarm 90 may be a voice alarm device, a light alarm device, or a combination of both.
  • the alarm 90 is electrically connected to the processor 70 .
  • the processor 70 compares the received weight of the edge ring 30 detected by the sensor 50 with a preset value. If the detected weight is less than or equal to the preset value, the processor 70 controls the alarm 90 to remind a user to replace the edge ring 30 .
  • At least one groove is formed on the edge ring 30 .
  • Each groove is arranged corresponding to one lift pin 41 .
  • the driver 43 drives the lift pin 41 to move upwards and then be received in the groove to drive the edge ring 30 to move.
  • the driver 43 may be a stepper motor.
  • FIG. 2 illustrates a flowchart of a method in accordance with an embodiment.
  • the method of adjusting the edge ring 30 of the plasma processing device 100 (shown in FIG. 1 ) is provided by way of embodiments, as there are a variety of ways to carry out the method.
  • Each block shown in FIG. 2 represents one or more processes, methods, or subroutines carried out in the method.
  • the illustrated order of blocks can be changed. Additional blocks may be added or fewer blocks may be utilized, without departing from this disclosure.
  • the method can begin at block 101 .
  • the driver 43 drives the lift pin 41 to raise the edge ring 30 from a first position of the plasma processing device 100 to a second position of the plasma processing device 100 .
  • the first position may be that the edge ring 30 is located on the upper surface 21 of the base ring 20 .
  • the sensor 50 detects a weight of the edge ring 30 at the second position, and the detected weight of the edge ring 30 is compared with a preset value to determine whether the edge ring 30 needs to be replaced.
  • the preset value may be 50% to 70% of an initial weight of the edge ring 30 . In some embodiments, the preset value may be varied as needed.
  • the processor 70 compares the detected weight of the edge ring 30 with the preset value to determine whether the edge ring 30 needs to be replaced. If the detected weight of the edge ring 30 is less than or equal to the preset value, the edge ring 30 needs to be replaced.
  • the processor 70 acquires a compensatory height H according a preset relationship between the detected weight of the edge ring 30 and the compensatory height H.
  • the processor 70 controls the driver 43 to drive the lift pin 41 to move the edge ring 30 to a third position according to the acquired compensatory height H.
  • the third position is higher than the first position, and a height difference between the third position and the first position is equal to the acquired compensatory height H, thereby compensating for a corrosion-loss of the edge ring 30 when the substrate 200 is processed.
  • the preset relationship between the detected weight and the compensatory height H is stored.
  • the preset relationship between the detected weight and the compensatory height H can be a relationship between the compensatory height H and a ratio of the detected weight to the initial weight of the edge ring.
  • the compensatory height H refers to a distance between a lower surface of the edge ring 30 and the upper surface 21 of the base ring 20 . That is, the compensatory height H is the height difference between the third position and the first position.
  • the compensatory height H may ensure uniform plasma function when the substrate 200 is being processed by the plasma processing device 100 with the etched edge ring 30 .
  • the preset relationship may be a correspondence of the following table 1 :
  • the ratio of the detected weight to the initial weight of the edge ring The compensatory height H 100% 0 95% 0.1 mm 90% 0.2 mm . . . . . 75% 0.5 mm
  • the processor 70 controls the driver 45 to drive the lift pin 41 to allow the edge ring 30 to fall from the second position to the first position.
  • the processor 70 acquires the compensatory height H according the preset relationship between the detected weight of the edge ring 30 and the compensatory height H, and then controls the driver 43 to drive the lift pin 41 to raise the edge ring 30 from the first position to the third position according the acquired compensatory height H.
  • the height difference between the third position and the first position is the acquired compensatory height H.
  • the processor 70 acquires the compensatory height H according to the preset relationship between the detected weight of the edge ring 30 and the compensatory height H, and then controls the driver 43 to drive the lift pin 41 to allow the edge ring 30 to fall from the second position to the third position according to the acquired compensatory height H.
  • the third position is higher than the first position.
  • the height difference between the third position and the first position is the acquired compensatory height H.
  • the processor 70 controls the driver 43 to drive the lift pin 41 to allow the edge ring 30 to fall from the second position to the first position, then the edge ring 30 is replaced at the first position.
  • the edge ring 30 when the detected weight of the edge ring 30 is less than or equal to the preset value, the edge ring 30 is replaced at the second position.
  • the processor 70 controls the alarm 90 to remind a user to replace the edge ring 30 .
  • the sensor 50 is disposed between the lift pin 41 and the driver 43 to detect the weight of the edge ring 30 at regular or irregular intervals, thereby avoiding removal of the edge ring 30 for weighing purposes. So that the production efficiency may be increased. In addition, the edge ring 30 or the plasma processing device 100 may be prevented from being damaged when the edge ring 30 is taken out.

Abstract

A plasma processing device includes an electrostatic chuck supporting a wafer, a base ring surrounding the electrostatic chuck, an edge ring disposed on the base ring, a lift assembly comprising at least one lift pin and at least one driver, and a sensor. Each lift pin movably passes through the base ring to lift the edge ring which is subject to being corroded during a plasma process. The driver is connected to the at least one lift pin to drive the lift pin to move upwards and downwards. The sensor is disposed between the driver and the lift pin to detect a weight of the edge ring when the lift pin raises the edge ring to a preset position as a difference in weight indicates loss of edge ring material due to corrosion.

Description

FIELD
The subject matter herein generally relates to a semiconductor processing device and a method of using the same, and more particularly to a plasma processing device and a method of adjusting an edge ring of the plasma processing device.
BACKGROUND
In the manufacture of a semiconductor element, etching, depositing, and cleaning a substrate are processes often performed by plasma. Edge rings are also often used in some plasma processes, and corrosion of the edge rings increases as the plasma device is used. When the corrosion of the edge ring reaches a certain level, in order to ensure the effectiveness of plasma processing, the edge ring needs to be replaced.
BRIEF DESCRIPTION OF THE DRAWINGS
Implementations of the present disclosure will now be described, by way of embodiments, with reference to the attached figures.
FIG. 1 is a cross-sectional view of an embodiment of a plasma processing device.
FIG. 2 is a flowchart of an embodiment of a method of adjusting an edge ring of a plasma processing device.
FIG. 3 is a cross-sectional view of an embodiment of the plasma processing device of FIG. 1 in another state.
FIG. 4 is a cross-sectional view of an embodiment of the plasma processing device of FIG. 1 in yet another state.
 DETAILED DESCRIPTION
It will be appreciated that for simplicity and clarity of illustration, where appropriate, reference numerals have been repeated among the different figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiments described herein can be practiced without these specific details. In other instances, methods, procedures, and components have not been described in detail so as not to obscure the related relevant feature being described. Also, the description is not to be considered as limiting the scope of the embodiments described herein. The drawings are not necessarily to scale, and the proportions of certain parts may be exaggerated to better illustrate details and features of the present disclosure.
The term “comprising,” when utilized, means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in the so-described combination, group, series, and the like.
FIG. 1 illustrates an embodiment of a plasma processing device 100. The plasma processing device 100 includes an electrostatic chuck 10, a base ring 20, an edge ring 30, a lift assembly 40, and a sensor 50.
The electrostatic chuck 10 supports a substrate 200 undergoing processing, the substrate 200 may be a wafer for example. The base ring 20 surrounds the electrostatic chuck 10. The edge ring 30 is disposed on the base ring 20. In some embodiments, the edge ring 30 is located on an upper surface 21 of the base ring 20, surrounds the substrate 200, and extends toward the substrate 200.
In some embodiments, the electrostatic chuck 10 may be made of aluminum oxide, the base ring 20 may be made of a ceramic material. In some embodiments, the electrostatic chuck 10 and the base ring 20 may be made of other materials.
The base ring 20 further includes a lower surface 23 facing away from the upper surface 21. At least one through hole 25 is defined to penetrate the upper surface 21 and the lower surface 23. Each through hole 25 is arranged corresponding to the edge ring 30.
The lift assembly 40 includes at least one lift pin 41 and at least one driver 43. Each lift pin 41 can be movably passed through the through hole 25. The at least one driver 43 is connected to the at least one lift pin 41 to drive the at least one lift pin 41 to move upwards and downwards along the through hole 25, thereby controlling the edge ring 30 to rise and fall. A connection between the at least one driver 43 and the at least one lift pin 41 may be a direct connection or an indirect connection. Specifically, the at least one driver 43 may drive the at least one lift pin 41 by lift rods 431 or by air pressure.
The sensor 50 is disposed between the at least one driver 43 and the at least one lift pin 41, and the sensor 50 detects a weight of the edge ring 30 when the edge ring 30 is raised to a preset position by the at least one lift pin 41. In some embodiments, the preset position is above the upper surface 21 of the base ring 20. In some embodiments, the preset position is spaced from the upper surface 21. In some embodiments, the preset position and the upper surface 21 are not arranged at the same plane. In some embodiments, the sensor 50 is located under a bottom of the at least one lift pin 41.
In some embodiments, a gap 60 is defined between each lift pin 41 and the edge ring 30 when the at least one lift pin 41 is at a starting position. Preferably, a distance of the gap 60 is 0.5-1.0 cm when the at least one lift pin 41 is at a starting position.
In some embodiments, the lift assembly 40 includes at least two lift pins 41 and the lift pins 41 are integrally formed. In some embodiments, the lift pins 41 may be independent of each other. In this illustrated embodiment, the lift pins 41 are integrally formed.
In some embodiments, the plasma processing device 100 may further include a processor 70. The processor 70 is electrically connected to the at least one driver 43 and the sensor 50. The processor 70 controls the at least one driver 43 to drive the at least one lift pin 41 to move upwards and downwards, thereby controlling the edge ring 30 to rise and fall. The processor 70 also receives signals as to the weight of the edge ring 30, detected by the sensor 50.
The plasma processing device 100 may further include a displayer 80 for displaying the weight of the edge ring 30, so that a user may determine whether to replace the edge ring 30 according to the weight of the edge ring 30 displayed by the displayer 80, and also may be warned in advance to determine how long it will take before replacing the edge ring 30.
The plasma processing device 100 may further include an alarm 90. The alarm 90 may be a voice alarm device, a light alarm device, or a combination of both. The alarm 90 is electrically connected to the processor 70. The processor 70 compares the received weight of the edge ring 30 detected by the sensor 50 with a preset value. If the detected weight is less than or equal to the preset value, the processor 70 controls the alarm 90 to remind a user to replace the edge ring 30.
In some embodiments, at least one groove (not shown) is formed on the edge ring 30. Each groove is arranged corresponding to one lift pin 41. The driver 43 drives the lift pin 41 to move upwards and then be received in the groove to drive the edge ring 30 to move.
In some embodiments, the driver 43 may be a stepper motor.
FIG. 2 illustrates a flowchart of a method in accordance with an embodiment. The method of adjusting the edge ring 30 of the plasma processing device 100 (shown in FIG. 1) is provided by way of embodiments, as there are a variety of ways to carry out the method. Each block shown in FIG. 2 represents one or more processes, methods, or subroutines carried out in the method. Furthermore, the illustrated order of blocks can be changed. Additional blocks may be added or fewer blocks may be utilized, without departing from this disclosure. The method can begin at block 101.
At block 101, referring to FIG. 3, the driver 43 drives the lift pin 41 to raise the edge ring 30 from a first position of the plasma processing device 100 to a second position of the plasma processing device 100.
In some embodiments, the first position may be that the edge ring 30 is located on the upper surface 21 of the base ring 20.
At block 102, the sensor 50 detects a weight of the edge ring 30 at the second position, and the detected weight of the edge ring 30 is compared with a preset value to determine whether the edge ring 30 needs to be replaced.
In some embodiments, the preset value may be 50% to 70% of an initial weight of the edge ring 30. In some embodiments, the preset value may be varied as needed.
When the plasma processing device 100 includes the processor 70, the processor 70 compares the detected weight of the edge ring 30 with the preset value to determine whether the edge ring 30 needs to be replaced. If the detected weight of the edge ring 30 is less than or equal to the preset value, the edge ring 30 needs to be replaced.
When the detected weight of the edge ring 30 is greater than the preset value, the processor 70 acquires a compensatory height H according a preset relationship between the detected weight of the edge ring 30 and the compensatory height H. Referring to FIG. 4, the processor 70 controls the driver 43 to drive the lift pin 41 to move the edge ring 30 to a third position according to the acquired compensatory height H. The third position is higher than the first position, and a height difference between the third position and the first position is equal to the acquired compensatory height H, thereby compensating for a corrosion-loss of the edge ring 30 when the substrate 200 is processed.
In some embodiments, the preset relationship between the detected weight and the compensatory height H is stored. The preset relationship between the detected weight and the compensatory height H can be a relationship between the compensatory height H and a ratio of the detected weight to the initial weight of the edge ring. The compensatory height H refers to a distance between a lower surface of the edge ring 30 and the upper surface 21 of the base ring 20. That is, the compensatory height H is the height difference between the third position and the first position. The compensatory height H may ensure uniform plasma function when the substrate 200 is being processed by the plasma processing device 100 with the etched edge ring 30. For example, the preset relationship may be a correspondence of the following table 1:
TABLE 1
The ratio of the detected weight to the
initial weight of the edge ring The compensatory height H
100%  0
95% 0.1 mm
90% 0.2 mm
. . . . . .
75% 0.5 mm
In some embodiments, when the detected weight of the edge ring 30 is greater than the preset value, the processor 70 controls the driver 45 to drive the lift pin 41 to allow the edge ring 30 to fall from the second position to the first position.
Further, the processor 70 acquires the compensatory height H according the preset relationship between the detected weight of the edge ring 30 and the compensatory height H, and then controls the driver 43 to drive the lift pin 41 to raise the edge ring 30 from the first position to the third position according the acquired compensatory height H. The height difference between the third position and the first position is the acquired compensatory height H.
In some embodiments, when the detected weight of the edge ring 30 is greater than the preset value, the processor 70 acquires the compensatory height H according to the preset relationship between the detected weight of the edge ring 30 and the compensatory height H, and then controls the driver 43 to drive the lift pin 41 to allow the edge ring 30 to fall from the second position to the third position according to the acquired compensatory height H. The third position is higher than the first position. The height difference between the third position and the first position is the acquired compensatory height H.
In some embodiments, when the detected weight of the edge ring 30 is less than or equal to the preset value, the processor 70 controls the driver 43 to drive the lift pin 41 to allow the edge ring 30 to fall from the second position to the first position, then the edge ring 30 is replaced at the first position.
In some embodiments, when the detected weight of the edge ring 30 is less than or equal to the preset value, the edge ring 30 is replaced at the second position.
In some embodiments, when the detected weight of the edge ring 30 is less than or equal to the preset value, the processor 70 controls the alarm 90 to remind a user to replace the edge ring 30.
The sensor 50 is disposed between the lift pin 41 and the driver 43 to detect the weight of the edge ring 30 at regular or irregular intervals, thereby avoiding removal of the edge ring 30 for weighing purposes. So that the production efficiency may be increased. In addition, the edge ring 30 or the plasma processing device 100 may be prevented from being damaged when the edge ring 30 is taken out.
It is to be understood, even though information and advantages of the present embodiments have been set forth in the foregoing description, together with details of the structures and functions of the present embodiments, the disclosure is illustrative only; changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the present embodiments to the full extent indicated by the plain meaning of the terms in which the appended claims are expressed.

Claims (8)

What is claimed is:
1. A method of adjusting an edge ring of a plasma processing device comprising:
raising an edge ring from a first position of the plasma processing device to a second position of the plasma processing device by a lift assembly of the plasma processing device; wherein the lift assembly comprises at least one lift pin and at least one driver;
detecting a weight of the edge ring at the second position by a sensor of the plasma processing device, wherein the sensor is disposed between the at least one driver and the at least one lift pin;
comparing the detected weight with a preset value, and replacing the edge ring if the detected weight is less than or equal to the preset value; determining a compensatory height according a preset relationship between the detected weight of the edge ring and the compensatory height if the detected weight is greater than the preset value, and then moving the edge ring to a third position based on the compensatory height by the lift assembly, the third position being higher than the first position.
2. The method of the claim 1, further comprising:
descending the edge ring from the second position to the first position by the lift assembly when the detected weight is greater than the preset value.
3. The method of the claim 2, wherein after descending the edge ring, the method further comprises:
determining a compensatory height according a preset relationship between the detected weight of the edge ring and the compensatory height; and
raising the edge ring from the first position to a third position based on the compensatory height by the lift assembly.
4. The method of the claim 1, further comprising:
determining a compensatory height according a preset relationship between the detected weight of the edge ring and the compensatory height if the detected weight is greater than the preset value; and
descending the edge ring from the second position to a third position by the lift assembly, wherein the third position is higher than the first position by the compensatory height.
5. The method of the claim 1, wherein before replacing the edge ring if the detected weight is less than or equal to the preset value, the method further comprises:
descending the edge ring from the second position to the first position by the lift assembly.
6. The method of the claim 1, wherein the edge ring is replaced when the edge ring is positioned at the second position by the lift assembly if the detected weight is less than or equal to the preset value.
7. The method of the claim 1, wherein the edge ring has an initial weight, and the preset value is 50% to 70% of the initial weight.
8. The method of the claim 1, wherein the method of raising an edge ring from a first position of the plasma processing device to a second position of the plasma processing device by a lift assembly of the plasma processing device comprises:
providing a lift assembly of the plasma processing device comprising at least one driver and at least two lift pins, wherein the at least two lift pins are integrally formed with each other, the at least one driver drives the at least two lift pins to move upwards and downwards; and
raising an edge ring from a first position of the plasma processing device to a second position of the plasma processing device by moving the at least two lift pins upwards together.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI781695B (en) * 2020-12-08 2022-10-21 南韓商吉佳藍科技股份有限公司 Apparatus for supporting substrate and method for transferring substrate using the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024023898A1 (en) * 2022-07-25 2024-02-01 三菱電機株式会社 Plasma processing device and deterioration determination method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170213758A1 (en) * 2016-01-26 2017-07-27 Applied Materials, Inc. Wafer edge ring lifting solution
US20170263478A1 (en) * 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US20170287682A1 (en) * 2016-03-29 2017-10-05 Lam Research Corporation Systems and methods for performing edge ring characterization
US20180053629A1 (en) * 2016-08-19 2018-02-22 Lam Research Corporation Control of on-wafer cd uniformity with movable edge ring and gas injection adjustment
US20200335368A1 (en) * 2019-04-22 2020-10-22 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
US20200395195A1 (en) * 2018-08-13 2020-12-17 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US7292428B2 (en) * 2005-04-26 2007-11-06 Applied Materials, Inc. Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
JP4795899B2 (en) * 2006-08-31 2011-10-19 東京エレクトロン株式会社 Substrate mounting mechanism and substrate delivery method
CN104752141B (en) * 2013-12-31 2017-02-08 中微半导体设备(上海)有限公司 Plasma processing device and operating method thereof
CN105575863B (en) * 2014-11-10 2019-02-22 中微半导体设备(上海)有限公司 Plasma processing apparatus, substrate discharge mechanism and method
US9892956B1 (en) * 2016-10-12 2018-02-13 Lam Research Corporation Wafer positioning pedestal for semiconductor processing
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170263478A1 (en) * 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US20170213758A1 (en) * 2016-01-26 2017-07-27 Applied Materials, Inc. Wafer edge ring lifting solution
US20170287682A1 (en) * 2016-03-29 2017-10-05 Lam Research Corporation Systems and methods for performing edge ring characterization
US20180053629A1 (en) * 2016-08-19 2018-02-22 Lam Research Corporation Control of on-wafer cd uniformity with movable edge ring and gas injection adjustment
US20200395195A1 (en) * 2018-08-13 2020-12-17 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
US20200335368A1 (en) * 2019-04-22 2020-10-22 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI781695B (en) * 2020-12-08 2022-10-21 南韓商吉佳藍科技股份有限公司 Apparatus for supporting substrate and method for transferring substrate using the same

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