US10838306B2 - Optical system, in particular for a microlithographic projection exposure apparatus - Google Patents

Optical system, in particular for a microlithographic projection exposure apparatus Download PDF

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US10838306B2
US10838306B2 US15/968,270 US201815968270A US10838306B2 US 10838306 B2 US10838306 B2 US 10838306B2 US 201815968270 A US201815968270 A US 201815968270A US 10838306 B2 US10838306 B2 US 10838306B2
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reflective surface
optical system
sensor
reflective
relative
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US20180246416A1 (en
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Ulrich Schoenhoff
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/004—Systems comprising a plurality of reflections between two or more surfaces, e.g. cells, resonators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0068—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration having means for controlling the degree of correction, e.g. using phase modulators, movable elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/12—Reflex reflectors
    • G02B5/122—Reflex reflectors cube corner, trihedral or triple reflector type
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports

Definitions

  • the disclosure relates to an optical system, in particular for a microlithographic projection exposure apparatus.
  • Microlithography is used for producing microstructured components, such as integrated circuits or LCDs, for example.
  • the microlithography process is carried out in a so-called projection exposure apparatus including an illumination device and a projection lens.
  • the image of a mask (reticle) illuminated via the illumination device is in this case projected via the projection lens onto a substrate (for example a silicon wafer) coated with a light-sensitive layer (photoresist) and arranged in the image plane of the projection lens, in order to transfer the mask structure to the light-sensitive coating of the substrate.
  • NA image-side numerical aperture
  • a further challenge in practice is that a correction of aberrations by way of a position manipulation of one or more mirrors in the projection lens is also desirable during the microlithographic exposure process, such that the issue described above cannot, in general, simply be rectified by adapting the wafer position in pauses in the exposure process.
  • the disclosure seeks to provide an optical system, in particular for a microlithographic projection exposure apparatus, which enables the correction of aberrations in particular also during the microlithographic exposure process, without the problems described above.
  • the disclosure provides an optical system, in particular for a microlithographic projection exposure apparatus, that includes: a first reflective surface, which is arranged in the optical beam path of the optical system and is movable for the correction of an aberration that occurs during the operation of the optical system; and at least one second reflective surface, arranged in the optical beam path of the optical system; wherein the optical system is configured in such a way that during the travel movement of the first reflective surface, the relative position of the first reflective surface and of the second reflective surface with respect to one another is maintainable in a stable manner; and wherein either the first reflective surface and the second reflective surface directly succeed one another in the optical beam path or there are only reflective optical elements between the first reflective surface and the second reflective surface.
  • the criterion according to which, during the travel movement of the first reflective surface, the relative position of the first reflective surface and of the second reflective surface with respect to one another is maintainable in a stable manner should be understood to mean that no image movement relevant to the exposure is caused.
  • the relative position of the first and second reflective surfaces is constant apart from a maximum change or fluctuation in the angle between these surfaces of 16 picorad (prad).
  • the disclosure is based on the concept, in particular, of keeping at least two reflective surfaces in a stable or substantially constant relative position with respect to one another, in order to obtain a travel movement carried out for the purpose of the correction of aberrations without an undesired image shift (e.g. on the wafer plane in a projection lens of a projection exposure apparatus).
  • a particular advantageous application example of the disclosure is a scenario in which a correction of aberrations by way of a position manipulation of a mirror is performed during the microlithographic exposure process, which can be realized according to the disclosure without performing a correction of image movement/shift on the wafer plane using a further mirror.
  • the optical system includes a first control loop for controlling the common position of the first reflective surface and of the second reflective surface in relation to a reference position.
  • common position is understood to mean the average position (i.e. the average position) of the positions of the first and second surfaces.
  • the optical system includes a first control loop for controlling the relative position of the first reflective surface in relation to a reference position.
  • the optical system includes a second control loop for controlling the relative position of the first reflective surface and of the second reflective surface with respect to one another.
  • control in the first control loop is carried out on the basis of sensor signals of at least one first sensor
  • control in the second control loop is carried out on the basis of sensor signals of at least one second sensor, wherein the first sensor has a lower sensitivity and a greater measurement range than the second sensor.
  • first sensor has a lower sensitivity and a greater measurement range than the second sensor.
  • a plurality of sensors can also be provided here for the first and/or second control loop, which sensors measure jointly in a plurality of degrees of freedom.
  • control in the second control loop is carried out on the basis of sensor signals of at least one sensor that measures the relative position of the first reflective surface and the second reflective surface with respect to one another.
  • the disclosure is, however, not restricted thereto.
  • the first reflective surface and the second reflective surface are mechanically rigidly coupled to one another.
  • the first reflective surface and the second reflective surface are embodied monolithically.
  • the first reflective surface and the second reflective surface are embodied on separate mirror bodies.
  • the first reflective surface and the second reflective surface directly succeed one another in the optical beam path.
  • At least one reflective optical element is arranged in the optical beam path between the first reflective surface and the second reflective surface.
  • the disclosure also includes embodiments in which the first reflective surface and the second reflective surface—although not directly succeeding one another in the optical light path, are arranged in a small spatial distance from each other (e.g. due to an optical light path that runs from the first reflective surface forward to one or more further optical elements and then back to the second reflective surface).
  • the first reflective surface and/or the second reflective surface are/is arranged in such a way that reflection angles which occur during the operation of the optical system upon the reflection of electromagnetic radiation at the respective surface, the reflection angles being relative to the respective surface normal, are at least 55°, in particular at least 60°, more particularly at least 65°.
  • At least one of the reflective surfaces can be operated with grazing incidence.
  • GI mirrors “grazing incidence”
  • the distance between successive GI mirrors is sometimes comparatively small, and so the disclosure (for instance in the case of rigid mechanical coupling between the first and second reflective surfaces) can be realized particularly advantageously in such a system.
  • the disclosure is not restricted to a realization in conjunction with GI mirror(s), such that, in particular, at least one of the two reflective surfaces can also be operated with normal incidence.
  • the first reflective surface and/or the second reflective surface are/is aspherical. In this way it is possible, on the one hand, to achieve an effective correction of aberrations and, on the other hand, at least to a good approximation, furthermore to avoid an image shift on the wafer plane.
  • the travel movement of the first reflective surface is able to be carried out during the operation of the optical system.
  • the optical system is designed for an operating wavelength of less than 30 nm, in particular for an operating wavelength of less than 15 nm.
  • the disclosure is not restricted thereto, but rather can also be realized advantageously e.g. at wavelengths in the DUV range (e.g. of less than 250 nm).
  • the optical system is an illumination device or a projection lens of a microlithographic projection exposure apparatus.
  • the disclosure furthermore relates to a microlithographic projection exposure apparatus, including an illumination device and a projection lens, wherein the illumination device, during the operation of the projection exposure apparatus, illuminates a mask situated in an object plane of the projection lens and the projection lens images structures on the mask onto a light-sensitive layer situated in an image plane of the projection lens, wherein the projection exposure apparatus includes an optical system having the features described above.
  • the disclosure furthermore also relates to a method for the operation of an optical system, in particular of a microlithographic projection exposure apparatus, wherein the optical system includes a first reflective surface and at least one second reflective surface in the optical beam path, wherein the first reflective surface is moved for the correction of an aberration that occurs during the operation of the optical system, and wherein, during the travel movement, the relative position of the first reflective surface and of the second reflective surface with respect to one another is kept stable, wherein either the first reflective surface and the second reflective surface directly succeed one another in the optical beam path or there are only reflective optical elements between the first reflective surface and the second reflective surface.
  • the relative position of the first reflective surface in relation to a reference position is controlled in a first control loop.
  • the relative position of the first reflective surface and of the second reflective surface with respect to one another is controlled in a second control loop.
  • the first reflective surface and the second reflective surface are mechanically rigidly coupled to one another.
  • FIG. 1 shows a schematic illustration of a projection exposure apparatus designed for operation in the EUV
  • FIGS. 2A-2C, 3 and 4 show schematic illustrations for elucidating the basic principle and the mode of action of the present disclosure
  • FIGS. 5A-5D show schematic illustrations for elucidating further embodiments of the disclosure.
  • FIG. 6 shows a schematic illustration for elucidating an exemplary embodiment of a projection lens in which the present disclosure can be realized.
  • FIG. 1 firstly shows a schematic illustration of an exemplary projection exposure apparatus which is designed for operation in the EUV and in which the present disclosure can be realized.
  • an illumination device in a projection exposure apparatus 100 designed for EUV includes a field facet mirror 103 and a pupil facet mirror 104 .
  • the light from a light source unit including a plasma light source 101 and a collector mirror 102 is directed onto the field facet mirror 103 .
  • a first telescope mirror 105 and a second telescope mirror 106 are arranged in the light path downstream of the pupil facet mirror 104 .
  • a deflection mirror 107 is arranged downstream in the light path and directs the radiation impinging on it onto an object field in the object plane of a projection lens 150 , which is merely indicated in FIG. 1 .
  • a reflective structure-bearing mask 121 on a mask stage 120 is arranged at the location of the object field, the mask being imaged into an image plane with the aid of the projection lens 150 , a substrate 161 coated with a light-sensitive layer (photoresist) on a wafer stage 160 being situated in the image plane.
  • a light-sensitive layer photoresist
  • the projection exposure apparatus or the projection lens can be configured in such a way that two reflective surfaces or mirrors are mechanically rigidly coupled to one another, in particular are realized on one and the same mirror body, as described below with reference to FIGS. 2B-2C and FIG. 3 , in order to be able to carry out a rotational movement—effected for the purpose of correction of aberrations—of the reflective surfaces about a predefined axis of rotation, without this being accompanied by an undesired image movement on the wafer plane.
  • control loops one controls or minimizes the relative movement of the two reflective surfaces and the other controls a common rotational movement of the reflective surfaces that serves once again for the correction of aberrations, it is possible to obtain no undesired image shift on the wafer plane in conjunction with a low outlay in terms of control engineering.
  • FIGS. 2A-2C serve firstly for clarifying the functional principle of a retroreflector, this principle being known as such:
  • a retroreflector 220 having two reflective surfaces 220 a , 220 b arranged at a fixed angle (90° in the example) relative to one another in accordance with FIG. 2B , what can be achieved is that the direction of the beam reflected at the second reflective surface is maintained independently of the direction of incidence upon impinging on the first reflective surface 220 a.
  • This maintenance of the direction of the light beam reflected at the second reflective surface is not restricted to a right-angled arrangement of the two reflective surfaces (i.e. a resulting 180° reflection), but rather is also fulfilled in arrangements having a different (constant) angle between two surfaces which successively reflect the respective light beam. Consequently, even during a movement of the mirror body 230 having the two reflective surfaces 230 a , 230 b , the mirror body being illustrated in FIG. 2C , the direction of the respective emerging light beam (i.e. reflected at the second reflective surface 230 b ) for one and the same direction of incidence of the light beam before the latter impinges on the first reflective surface 230 a is maintained or remains constant.
  • the disclosure then includes the concept, in particular, of realizing two reflective surfaces within the projection lens such that their relative position with respect to one another remains unchanged during the lithography process.
  • This can be achieved in particular (but without the disclosure being restricted thereto) by the two reflective surfaces being mechanically rigidly coupled to one another or being realized monolithically on one and the same mirror body, as described below with reference to the exemplary embodiment illustrated in FIG. 3 .
  • FIG. 3 shows, for the realization of the concept described above, the configuration of a mirror body 310 having two reflective surfaces 311 , 312 , at which—as indicated schematically in FIG. 3 —a light beam impinging during operation experiences in each case two successive reflections (wherein, as described above, the position of the image generated in a downstream image plane or the wafer plane of the projection lens having the mirror remains unchanged independently of a movement of the mirror body 310 ).
  • FIG. 3 likewise illustrates a control loop in which the position of the mirror body 310 having the two reflective surfaces 311 , 312 is measured relative to a frame 305 via a position sensor 320 and is set to the desired value (corresponding to a setpoint position value 301 ) via a controller 340 via an actuator 330 .
  • Position sensor 320 , actuator 330 and controller 340 act only in one degree of freedom in the basic schematic diagram in FIG. 3 , namely with regard to a rotational movement about an axis of rotation running perpendicular to the plane of the drawing. In the technical realization, typically a plurality of degrees of freedom can be manipulated simultaneously.
  • the position sensor 320 (or the position sensors) involves/involve a comparatively low measurement accuracy, which in particular is significantly lower in comparison with the measurement accuracy of an analogously used position sensor which would have to ensure the stability of the image position in the case of the movement of a single reflective surface.
  • the position sensor 320 it suffices to carry out a comparatively coarse position measurement with regard to the positioning of the mirror body 310 for influencing aberrations, wherein although this position measurement should have a large measurement range (of e.g. 50 ⁇ m) designed according to the positioning for influencing aberrations, it nonetheless involves a measurement accuracy lower by a plurality of orders of magnitude in comparison with a position sensor that ensures image stability upon reflection at only one moved reflective surface.
  • the disclosure is not restricted to the realization of two successive reflections or reflective surfaces on one and the same mirror body or to an otherwise realized rigid mechanical connection of the relevant reflective surfaces.
  • the relative position of two separate mirror bodies each having a reflective surface, which mirror bodies are not rigidly connected to one another can also be correspondingly controlled in a suitable control loop.
  • major advantages are afforded with regard to the outlay in terms of sensor technology and control engineering, as will be explained in greater detail below with reference to FIG. 4 .
  • FIG. 4 shows two separate mirror bodies 410 a , 410 b , each having a reflective surface 411 and 412 , respectively, the mirror bodies not being mechanically rigidly connected to one another.
  • the relative position of the two mirror bodies 410 a , 410 b with respect to one another is determined via a relative sensor 425 .
  • the relative sensor 425 involves a comparatively high measurement accuracy (since a relative movement between the two mirror bodies 410 a , 410 b or the reflective surfaces 411 , 412 with respect to one another would lead directly to a significant image movement), in return the relative sensor does not involve a large measurement range (since the reflective surfaces 411 , 412 are intended to remain positioned continuously at the same angle with respect to one another).
  • the relative position of the two mirror bodies 410 a , 410 b or of the two reflective surfaces 411 , 412 is controlled using a relative controller 445 and using actuators 431 , 432 assigned to the respective mirror bodies 410 a , 410 b .
  • the actuators 431 , 432 here are driven in each case such that—for instance in the case of an undesired movement of the mirror bodies 410 a , 410 b away from one another—a force is applied with which the mirror bodies 410 a , 410 b are moved towards one another again.
  • f 1 f c +f d
  • f 2 f c ⁇ f d
  • a superordinate control loop with controller 440 is realized, which controls the common or average position of the two mirror bodies 410 a and 410 b relative to an outer frame 405 .
  • “ 401 ” designates a setpoint position value.
  • the superordinate control loop with controller 440 in turn involves (in this respect analogously to the exemplary embodiment from FIG. 3 ) a sensor having a large measurement range, but in conjunction with only a low measurement accuracy (since here e.g. a tilting of the mirror bodies 410 a , 410 b for the purpose of the manipulation of aberrations are determined with a comparatively low accuracy, but over a large measurement range of e.g. 50 ⁇ m).
  • the disclosure is not restricted to the concrete arrangement of the actuators as illustrated in FIG. 4 .
  • one of the actuators may act between the two mirror bodies 410 a , 410 b , and the other actuator between one of the mirror bodies 410 a , 410 b and the frame 405 .
  • FIGS. 5A-5D show schematic illustrations for elucidating further embodiments of the disclosure, wherein the same components or components which have the same function are designated with reference numbers increased by “100” with respect to FIG. 4 .
  • FIG. 5A differs from that of FIG. 4 insofar as—instead of measuring the position of only one mirror body in relation to the outer frame—the average positions of both mirror bodies 510 a and 510 b are determined, and used as a basis for the respective superordinate control loop with controller 540 which controls the average position of the two mirror bodies 510 a and 510 b relative to the outer frame 505 .
  • “ 501 ” designates a setpoint position value.
  • FIG. 5B as to the control loop with controller 545 in FIG. 5B , measuring of the relative position of mirror bodies 510 a and 510 b as well as the respective control are analogously to FIG. 4 .
  • the position of one mirror body 510 b is measured in relation to the outer frame 505 and used as a basis for the control loop with controller 540 . This controls the position of mirror body 510 b .
  • the position of mirror body 510 a is indirectly controlled by controller 545 .
  • FIG. 5C differs from that of FIG. 4 insofar as the respective positions of each of the mirror bodies 510 a and 510 b are measured in relation to the outer frame 505 . These measured positions are then used for both control loops, i.e. for the control loop with controller 540 controlling the common or average position of the mirror bodies 510 a , 510 b , and the control loop with controller 545 for controlling the relative position of the reflective surfaces 511 and 512 or mirror bodies 510 a , 510 b , respectively.
  • FIG. 5D The embodiment according to FIG. 5D is similar to that of FIG. 4 insofar as what is measured is, on the one hand, the relative position of the two mirror bodies 510 a and 510 b , and on the other hand, the position of one mirror body 510 b in relation to the outer frame 505 .
  • the positions of both mirror bodies 510 a and 510 b are controlled in separate control loops with controllers 550 or 560 , respectively.
  • FIG. 6 shows an exemplary concrete set-up of a projection lens 600 in which the disclosure can be realized.
  • the disclosure is not restricted to realization in a projection lens having the concrete set-up shown in FIG. 6 .
  • the disclosure can also be realized in projection lenses having a different set-up (e.g. as disclosed in DE 10 2012 202 675 A1) or other optical systems.
  • the projection lens 600 in accordance with the exemplary embodiment in FIG.
  • mirrors M 1 to M 8 have eight mirrors M 1 to M 8 , of which the mirrors M 1 , M 4 , M 7 and M 8 are embodied as mirrors for normal incidence of the illumination light (with an angle of incidence of less than 45°) and can include a reflection layer stack composed of molybdenum (Mo) and silicon (Si) layers.
  • the mirrors M 2 , M 3 , M 5 and M 6 are embodied as mirrors for grazing incidence of the illumination light (with angles of incidence of greater than 60°) and can have a coating with, for example, a layer composed of molybdenum (Mo) or ruthenium (Ru).
  • the reflective surfaces kept stable with regard to their relative position according to the disclosure can be the optical effective surfaces of the mirrors M 5 and M 6 (with combination of two surfaces that are reflective under grazing incidence) or else the optical effective surfaces of the mirrors M 3 and M 4 (with combination of a surface that is reflective under grazing incidence with a surface that is reflective under substantially normal incidence).

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Microscoopes, Condenser (AREA)
US15/968,270 2015-12-15 2018-05-01 Optical system, in particular for a microlithographic projection exposure apparatus Active US10838306B2 (en)

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DE102015225262.0A DE102015225262A1 (de) 2015-12-15 2015-12-15 Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102015225262.0 2015-12-15
DE102015225262 2015-12-15
PCT/EP2016/080498 WO2017102599A1 (en) 2015-12-15 2016-12-09 Optical system, in particular for a microlithographic projection exposure apparatus

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PCT/EP2016/080498 Continuation WO2017102599A1 (en) 2015-12-15 2016-12-09 Optical system, in particular for a microlithographic projection exposure apparatus

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KR (1) KR102694720B1 (enrdf_load_stackoverflow)
DE (1) DE102015225262A1 (enrdf_load_stackoverflow)
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JP7305353B2 (ja) * 2016-05-25 2023-07-10 カール・ツァイス・エスエムティー・ゲーエムベーハー リソグラフィ装置の光学素子の位置測定
DE102022208204A1 (de) 2022-08-08 2023-08-31 Carl Zeiss Smt Gmbh Verfahren zur Kompensation von Abbildungsfehlern einer EUV-Projektionsbelichtungsanlage

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