US10763378B2 - Double printing method and screen stencil for improving the tensile force of the electrode of solar panel - Google Patents
Double printing method and screen stencil for improving the tensile force of the electrode of solar panel Download PDFInfo
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- US10763378B2 US10763378B2 US15/779,854 US201715779854A US10763378B2 US 10763378 B2 US10763378 B2 US 10763378B2 US 201715779854 A US201715779854 A US 201715779854A US 10763378 B2 US10763378 B2 US 10763378B2
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- 238000007639 printing Methods 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title description 14
- 239000007787 solid Substances 0.000 claims description 19
- 235000012431 wafers Nutrition 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000002003 electrode paste Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H01L31/022433—
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F15/00—Screen printers
- B41F15/14—Details
- B41F15/34—Screens, Frames; Holders therefor
- B41F15/36—Screens, Frames; Holders therefor flat
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H01L31/0201—
-
- H01L31/18—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/215—Geometries of grid contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
- H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
- H10F77/937—Busbar structures for modules
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to the field of solar cell, more particularly, to a double printing method and screen stencil for improving the tensile force of the electrode of solar panel.
- the existing double screen stencil printing of solar cell prints the front surface fingers (DP1) in the primary printing, and subsequently prints the busbars and fingers (DP2) in the secondary printing.
- the busbars are printed only once.
- An insufficient height will lead to the risk of unqualified tensile force of the positive electrode.
- the silver paste formula is modified to have the property of high tensile force and strong corrosivity, although the tensile force can be improved, the efficiency will decrease.
- the screen stencil parameters are adjusted, the height of the busbars can be improved to ensure the tensile force of the positive electrode.
- the consumption of silver paste will increase, such that the production costs will go up.
- the technical problem to be solved by the present invention is to provide a double printing method and screen stencil that improves the tensile force of the electrode in solar panels.
- the method looks to improve the double screen stencil printing of the solar cell in the prior art, where the busbar is printed only once and the insufficient height increases the chance of the unqualified tensile force of the positive electrode.
- a double printing screen stencil for improving the tensile force of the electrode of solar panel characterized in that, the double printing screen stencil includes a first screen stencil and a second screen stencil.
- the first screen stencil pattern includes equally spaced fingers.
- a plurality of bottom electrodes are arranged at the position of the busbar intersecting with the fingers.
- the first screen stencil pattern further includes at least two aligning points.
- the second screen stencil pattern includes equally spaced fingers, busbars intersecting with the fingers, and aligning points corresponding to the aligning points in the first screen stencil pattern.
- the fingers are corresponding to those of the first screen stencil and the spacing of the fingers is the same as that of the first screen stencil.
- the fingers of the first screen stencil pattern pass through the busbars or are disconnected at the point of the busbars.
- the bottom electrodes are equally spaced and evenly distributed at the position of the busbar. Furthermore, a length of the bottom electrodes that are parallel to the fingers is equal to a width of the busbars.
- a shape of the bottom electrodes is selected from the group consisting of rectangle, sawtooth, square, and any combination.
- the aligning points are arranged around the position of the busbars.
- the aligning points arranged in the first screen stencil pattern are solid aligning points.
- the aligning points arranged in the second screen stencil pattern are hollow aligning points.
- the hollow aligning point and the solid aligning point are round-shaped.
- the diameter of the hollow aligning points is the same as the diameter of the solid aligning points.
- the diameter of the aligning points is a half of the width of the busbar. More preferably, the diameter of the aligning point ranges between 0.2 mm and 1.5 mm.
- the amount of the aligning points is four.
- the four aligning points are evenly distributed around the position of the busbars.
- a double printing method for improving the tensile force of the electrode of solar panel characterized in that, the method includes the following steps.
- Step one is printing by a first screen stencil, wherein electrode paste passes through the first screen stencil to print a front surface electrode pattern onto a solar cell wafer, so as to print fingers, bottom electrodes, and aligning points.
- Step two is printing by a second screen stencil subsequently, wherein the aligning points of the second screen stencil are aligned with the aligning points already formed on the solar cell wafer.
- the electrode paste passes through the second screen stencil to print the front surface electrode pattern onto the solar cell wafer, so as to print the busbars and the fingers in a further step.
- Each of the first screen stencil and second screen stencil is a double printing screen stencil according to any one of claims 1 - 7 .
- the electrode paste for the primary screen stencil printing is preferably selected to be a paste which can penetrate an antireflection film and has a good ohmic contact performance with the silicon substrate.
- the paste is a mixture of silver powder, glass powder, and an organic carrier.
- a mass fraction of the silver powder ranges from 80% to 90%.
- a front surface electrode of a solar cell is characterized in that, the front surface electrode is prepared by the above-mentioned method.
- the front surface electrode includes a busbar pattern and a finger pattern.
- the height of the busbar pattern is undulating.
- the tensile force of the electrode of the solar panel is improved by setting the bottom electrodes at the position of the busbar in the first screen stencil pattern without substantially adjusting the parameters of the screen stencil, such that when the screen stencil is used in printing, the bottom electrodes are printed at the position of the busbar while the fingers are printed during the primary printing.
- the height of busbar is raised during the secondary printing.
- the tensile force value of the positive electrode can be increased by 0.2-0.3 N/mm.
- the utilization rate of the electrode paste is improved.
- the conversion efficiency of the solar cell is improved to a certain extent.
- the present invention is of great significance in terms of the solar cell, and is worth being popularized and applied.
- the setting of the aligning points on the first screen stencil pattern and the setting of the corresponding aligning points on the second screen stencil pattern are convenient for fitting the position of the secondary printing with the position of the primary printing, such that the electrode yield rate is improved.
- the fingers of the first screen stencil pattern pass through the busbar or are disconnected at the point of the busbar. Under the condition where the fingers do not pass through the busbar, the production of the screen stencil requires a high precision with the advantage of saving electrode paste. If the fingers pass through the busbar, the production of the screen stencil requires a lower precision, and the production of the screen stencil is easy.
- the aligning points arranged on the first screen stencil pattern are solid aligning points
- the aligning points arranged on the second screen stencil pattern are hollow aligning points, such that a precise alignment is enabled.
- fingers and bottom electrodes located at the position of the busbars are printed during the primary printing, and the fingers and busbars are printed during the secondary printing.
- the height of the busbar has been raised by the primary printing.
- the welding performance of the positive electrode is improved.
- the tensile force value of the positive electrode can be increased by 0.2-0.3 N/mm.
- the tensile force value of the positive electrode is increased, such that the conversion efficiency of the solar cell is improved.
- FIG. 1 is a schematic view of a first screen stencil pattern of the present invention
- FIG. 2 is a partially enlarged schematic view of an aligning point of the first screen stencil pattern of the present invention
- FIG. 3 is a partially enlarged schematic view of A of the first screen stencil pattern of the present invention.
- FIG. 4 is a schematic view of a second screen stencil pattern of the present invention.
- FIG. 5 is a partially enlarged schematic view of a second screen stencil pattern of the present invention.
- FIG. 6 is a schematic view of the bottom electrodes of the first screen stencil pattern of Embodiment 2;
- FIG. 7 is a schematic view of the bottom electrodes of the first screen stencil pattern of Embodiment 3.
- FIG. 8 is a data list of tensile force test of a cell wafer.
- 1 solid aligning point
- 2 bottom electrode
- 3 finger
- 4 busbar
- 5 hollow aligning point
- a double printing screen stencil for improving the tensile force of the electrode of solar panel includes a first screen stencil and a second screen stencil.
- a first screen stencil pattern includes equally spaced fingers 3 .
- a plurality of bottom electrodes 2 are arranged at the position of the busbar intersecting with fingers 3 .
- the first screen stencil pattern further includes at least two aligning points.
- a second screen stencil pattern includes equally spaced fingers 3 , busbars 4 intersecting with the fingers 3 , aligning points corresponding to the aligning points in the first screen stencil pattern. Fingers 3 are corresponding to that of the first screen stencil. The spacing of the fingers is the same as that of the first screen stencil.
- fingers 3 of the first screen stencil pattern pass through the busbars.
- fingers 3 of the first screen stencil pattern also can be disconnected at the point of the busbars.
- bottom electrodes 2 are equally spaced and evenly distributed at the position of the busbar.
- the length of the bottom electrodes which is parallel to the fingers is equal to a width of the busbars.
- FIG. 3 which is a partially enlarged view of part A of FIG. 1 shows that, two bottom electrodes make up a group and are equally spaced and evenly distributed at the position of the busbars.
- Bottom electrode 2 is rectangle-shaped.
- the shape of bottom electrode 2 can be any of the sawtooth and square, or any combination of the rectangle, sawtooth, and square.
- the aligning points are arranged around the position of the busbars.
- the aligning points arranged in the first screen stencil pattern are solid aligning points 1 .
- the aligning points arranged in the second screen stencil pattern are hollow aligning points 5 .
- Hollow aligning point 5 and solid aligning point 1 are round-shaped.
- the diameter of hollow aligning point 5 is the same as the diameter of solid aligning point 1 .
- the diameter of the aligning points preferably is 1 ⁇ 2 of the width of the busbar. More preferably, the diameter of the aligning points ranges between 0.2 mm and 1.5 mm.
- the amount of the aligning points is four.
- the four aligning points are evenly distributed around the position of the busbars.
- a double printing screen stencil for improving the tensile force of the electrode of solar panel includes a first screen stencil and a second screen stencil.
- the first screen stencil pattern includes equally spaced fingers.
- a plurality of bottom electrodes are arranged at the position where the busbar intersecting with the fingers.
- the first screen stencil pattern further includes at least two aligning points.
- the second screen stencil pattern includes equally spaced fingers, busbars intersecting with the fingers, and aligning points corresponding to the aligning points in the first screen stencil pattern.
- the fingers are corresponding to those of the first screen stencil. The spacing of the fingers is the same as that of the first screen stencil.
- the amount of the fingers of the first screen stencil pattern is 106.
- the fingers are equally spaced and paralleled distributed.
- the fingers pass through the busbars.
- bottom electrodes 2 are rectangle-shaped with the length of 0.7 mm and the width of 0.2 mm.
- the bottom electrodes 2 are evenly distributed at the position of the busbars with the interval of 0.74 mm.
- four solid aligning points are arranged around the position of the busbars in the first screen stencil pattern.
- the amount of the fingers of the second screen stencil pattern is 106. Similar to the first screen stencil, the fingers of the second screen stencil pattern are also equally spaced and paralleled distributed. Moreover, five busbars are perpendicular to the fingers. The width of the busbar is 0.7 mm. Four hollow aligning points are arranged around the position of the busbars. The hollow aligning points are corresponding to the solid aligning points of the first screen stencil one by one.
- a double printing screen stencil for improving the tensile force of the electrode of solar panel includes a first screen stencil and a second screen stencil.
- the first screen stencil pattern includes equally spaced fingers.
- a plurality of bottom electrodes are arranged at the position where the busbar intersecting with the fingers.
- the first screen stencil pattern further includes at least two aligning points.
- the second screen stencil pattern includes equally spaced fingers, busbars intersecting with the fingers, and aligning points corresponding to the aligning points in the first screen stencil pattern.
- the fingers are corresponding to those of the first screen stencil. The spacing of the fingers is the same as that of the first screen stencil.
- the amount of the fingers of the first screen stencil pattern is 106.
- the fingers are equally spaced and paralleled distributed.
- the fingers pass through the busbars.
- bottom electrodes 2 are sawtooth-shaped with the length of 0.7 mm.
- the bottom electrodes are evenly distributed at the position of the busbars with the interval of 0.5 mm.
- four solid aligning points are arranged around the position of the busbars in the first screen stencil pattern.
- the amount of the fingers of the second screen stencil pattern is 106. Similar to the first screen stencil, five busbars are perpendicular to the fingers. The width of the busbar is 0.7 mm. Four hollow aligning points are arranged around the position of the busbars. The hollow aligning points are corresponding to the solid aligning points of the first screen stencil one by one.
- a double printing method for improving the tensile force of the electrode of the solar panel which uses the double printing screen stencil of Embodiment 2, includes the following steps. Step one, printing by a first screen stencil, wherein the electrode paste passes through the first screen stencil to print a front surface electrode pattern onto a solar cell wafer, so as to print the fingers, bottom electrodes, and four solid aligning points. There are a plurality of bottom electrodes respectively distributed at a position of busbars. Step two, printing by a second screen stencil subsequently, wherein after a High-Definition Camera captures the four solid aligning points, the solar cell wafer is automatically adjusted to a proper position to achieve an accurate alignment with the hollow aligning points of the second screen stencil. After that, the electrode paste passes through the second screen stencil to print the front surface electrode pattern onto the solar cell wafer so as to further print the busbars and the fingers.
- a double printing method for improving the tensile force of the electrode of the solar panel which uses the double printing screen stencil of Embodiment 3, includes the following steps. Step one, printing by a first screen stencil, wherein the electrode paste passes through the first screen stencil to print a front surface electrode pattern onto a solar cell wafer, so as to print the fingers, bottom electrodes, and four solid aligning points. There are a plurality of bottom electrodes respectively distributed at a position of busbars. Step two, printing by a second screen stencil subsequently, wherein after a High-Definition Camera captures the four solid aligning points, the solar cell wafer is automatically adjusted to a proper position to achieve an accurate alignment with the hollow aligning points of the second screen stencil. After that, the electrode paste passes through the second screen stencil to print the front surface electrode pattern onto the solar cell wafer so as to further print the busbars and the fingers.
- the front surface electrode of the solar cell which is prepared by the double printing method for improving the tensile force of the electrode of the solar panel of Embodiment 4, includes a silicon substrate.
- the size of the silicon substrate is 156.75 mm*156.75 mm.
- the amount of the busbars is 5.
- the width of the busbars is 0.7 mm.
- the amount of fingers is 106.
- the busbars have an undulating pattern. At the position where the height of the busbar is equal to the height of the fingers, the busbar is strip-shaped with the width of 0.2 mm and the interval of 0.74 mm.
- the front surface electrode of the solar cell which is prepared by the double printing method for improving the tensile force of the electrode of the solar panel of Embodiment 5, includes a silicon substrate.
- the size of the silicon substrate is 156.75 mm*156.75 mm.
- the amount of the busbars is 5.
- the width of the busbars is 0.7 mm.
- the amount of fingers is 106.
- the busbars have an undulating pattern. At the position where the height of the busbar is equal to the height of the fingers, the busbar is sawtooth-shaped with the interval of 0.5 mm.
- NaOH solution with a concentration of 30-50 g/L is used to remove the mechanical damaged layer of the silicon wafer surface.
- NaOH solution with a concentration of 15-20 g/L is used to corrode the silicon wafer, so as to form a rough texture on the surface.
- HCL solution with a concentration of 70-85 g/L is used for cleaning to remove the metal ions on the surface.
- ion water is used for cleaning. After that, drying is conducted.
- the n-type layer is formed on the surface of the p-type silicon wafer by the high temperature diffusion method of the phosphorus oxychloride liquid source.
- the diffusion temperature is 830° C.
- the time period is 300 minutes.
- the square resistance is controlled in the range of 86-92 ⁇ .
- the n-type silicon at the edge of the silicon wafer and the phosphosilicate glass on the surface of silicon wafer are etched.
- a mixed solution of HNO 3 and HF is used to remove the PN junction at the edge and the back surface.
- the concentration of HNO 3 in the solution is 340-390 g/L.
- the concentration of HF in the solution is 40-50 g/L.
- the etching temperature is 5-9° C.
- the etching amount is controlled at 1.3-1.6 g.
- KOH solution with a concentration of 5% is used to wash off the porous silicon on the surface of the silicon wafer, and neutralize the preceding acid.
- HF solution with a concentration of 5% is used to remove the PSG (phosphosilicate glass) on the surface.
- the silicon nitride is deposited on the front surface of the silicon wafer with PECVD.
- the thickness is 75-96 nm.
- the refractive index is 2.0-2.3.
- the back surface electrode is printed. The drying is conducted.
- the front surface electrode is printed for a second time.
- Embodiment 4 and Embodiment 5 are used to conduct the printing, respectively.
- the solar cell having front surface electrode described in Embodiment 6 and Embodiment 7 and a control group of solar cell without the bottom electrode are tested.
- the testing method is that, welding the welding tape on the busbar of the solar cell wafer, conducting peel force testing at 180 degrees on the welded solar cell wafer, collecting 200 data points for each group of data, and then calculating the mean value.
- the test data is shown in FIG. 8 , and the tensile force of the solar cell produced by arranging the rectangle-shaped bottom electrode at the position of the busbars of the first screen stencil is 2.438 N/mm.
- the tensile force of the solar cell produced by arranging the sawtooth-shaped bottom electrode at the position of the busbars of the first screen stencil is 2.438 N/mm.
- the tensile force of the solar cell of the control group produced by arranging the first screen stencil without the bottom electrode is 2.194 N/mm.
- the tensile force is increased by 0.244 N/mm, 0.292 N/mm, respectively
- the bottom electrode is printed at the position of the busbars while the fingers are primarily printed, such that the height of the busbars is raised in a secondary printing.
- the welding performance of the positive electrode is improved.
- the tensile force of the positive electrode can be increased by 0.2-0.3 N/mm.
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Abstract
Description
Claims (7)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/086512 WO2018218474A1 (en) | 2017-05-31 | 2017-05-31 | Dual printing processing method and screen plate for improving electrode tensile strength of battery panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20190363203A1 US20190363203A1 (en) | 2019-11-28 |
| US10763378B2 true US10763378B2 (en) | 2020-09-01 |
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| US15/779,854 Active 2037-07-18 US10763378B2 (en) | 2017-05-31 | 2017-05-31 | Double printing method and screen stencil for improving the tensile force of the electrode of solar panel |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10763378B2 (en) |
| CN (1) | CN107636845A (en) |
| WO (1) | WO2018218474A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109203744A (en) * | 2018-08-07 | 2019-01-15 | 天津英利新能源有限公司 | A kind of the printing-sintering method and examination criteria of black silion cell |
| CN110459616A (en) * | 2018-10-17 | 2019-11-15 | 协鑫集成科技股份有限公司 | Silicon substrate, solar battery sheet and method for forming same, printing screen |
| CN109616530B (en) * | 2018-11-14 | 2020-07-31 | 晶澳(扬州)太阳能科技有限公司 | A process for forming electrodes of solar cells |
| CN113345975A (en) * | 2021-06-24 | 2021-09-03 | 韩华新能源(启东)有限公司 | Front side pattern structure of solar cell suitable for step-by-step printing and solar cell |
| US20240395956A1 (en) * | 2023-05-23 | 2024-11-28 | Zhejiang Jinko Solar Co., Ltd. | Solar cell, photovoltaic module, and method for manufacturing a silicon substrate |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110308601A1 (en) | 2010-06-21 | 2011-12-22 | Sungjin Kim | Solar cell |
| CN102582229A (en) | 2012-02-21 | 2012-07-18 | 常熟市方塔涂料化工有限公司 | Assorted screen of solar battery electrode and printing method thereof |
| US20140076231A1 (en) * | 2011-01-27 | 2014-03-20 | Koenen Gmbh | Printing stencils for applying a printing pattern to a substrate and method for producing a printing stencil |
| US20140318613A1 (en) * | 2011-04-12 | 2014-10-30 | Schott Solar Ag | Solar cell |
| CN104247049A (en) | 2012-04-18 | 2014-12-24 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | Methods of printing solar cell contacts |
| CN204315585U (en) | 2015-01-05 | 2015-05-06 | 无锡德鑫太阳能电力有限公司 | A kind of solar battery sheet with anti-breaking gate electrode structure |
| CN205130593U (en) | 2015-10-22 | 2016-04-06 | 镇江大全太阳能有限公司 | Crystalline silicon solar cells substep half tone for printing technology |
| CN205130621U (en) * | 2015-11-24 | 2016-04-06 | 苏州阿特斯阳光电力科技有限公司 | Vice aperture plate version |
| CN205631674U (en) * | 2016-01-08 | 2016-10-12 | 上海艾力克新能源有限公司 | Positive electrode sleeve screen version graphic structure of brilliant silicon solar cell secondary printing |
-
2017
- 2017-05-31 CN CN201780001103.1A patent/CN107636845A/en active Pending
- 2017-05-31 US US15/779,854 patent/US10763378B2/en active Active
- 2017-05-31 WO PCT/CN2017/086512 patent/WO2018218474A1/en not_active Ceased
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110308601A1 (en) | 2010-06-21 | 2011-12-22 | Sungjin Kim | Solar cell |
| US20140076231A1 (en) * | 2011-01-27 | 2014-03-20 | Koenen Gmbh | Printing stencils for applying a printing pattern to a substrate and method for producing a printing stencil |
| US20140318613A1 (en) * | 2011-04-12 | 2014-10-30 | Schott Solar Ag | Solar cell |
| CN102582229A (en) | 2012-02-21 | 2012-07-18 | 常熟市方塔涂料化工有限公司 | Assorted screen of solar battery electrode and printing method thereof |
| CN104247049A (en) | 2012-04-18 | 2014-12-24 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | Methods of printing solar cell contacts |
| CN204315585U (en) | 2015-01-05 | 2015-05-06 | 无锡德鑫太阳能电力有限公司 | A kind of solar battery sheet with anti-breaking gate electrode structure |
| CN205130593U (en) | 2015-10-22 | 2016-04-06 | 镇江大全太阳能有限公司 | Crystalline silicon solar cells substep half tone for printing technology |
| CN205130621U (en) * | 2015-11-24 | 2016-04-06 | 苏州阿特斯阳光电力科技有限公司 | Vice aperture plate version |
| CN205631674U (en) * | 2016-01-08 | 2016-10-12 | 上海艾力克新能源有限公司 | Positive electrode sleeve screen version graphic structure of brilliant silicon solar cell secondary printing |
Also Published As
| Publication number | Publication date |
|---|---|
| US20190363203A1 (en) | 2019-11-28 |
| WO2018218474A1 (en) | 2018-12-06 |
| CN107636845A (en) | 2018-01-26 |
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