US10588182B2 - Semiconductor microwave oven and semiconductor microwave source thereof - Google Patents

Semiconductor microwave oven and semiconductor microwave source thereof Download PDF

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US10588182B2
US10588182B2 US15/314,060 US201415314060A US10588182B2 US 10588182 B2 US10588182 B2 US 10588182B2 US 201415314060 A US201415314060 A US 201415314060A US 10588182 B2 US10588182 B2 US 10588182B2
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microwave
power
signal
semiconductor
microwave signal
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US20170188417A1 (en
Inventor
Feina ZHANG
Xiangwei Tang
Xiantao DU
Minyong Liu
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Midea Group Co Ltd
Guangdong Midea Kitchen Appliances Manufacturing Co Ltd
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Midea Group Co Ltd
Guangdong Midea Kitchen Appliances Manufacturing Co Ltd
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Priority claimed from CN201410232381.6A external-priority patent/CN104676670A/zh
Priority claimed from CN201410232874.XA external-priority patent/CN104676671A/zh
Application filed by Midea Group Co Ltd, Guangdong Midea Kitchen Appliances Manufacturing Co Ltd filed Critical Midea Group Co Ltd
Assigned to MIDEA GROUP CO., LTD., GUANGDONG MIDEA KITCHEN APPLIANCES MANUFACTURING CO., LTD. reassignment MIDEA GROUP CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DU, Xiantao, Liu, Minyong, TANG, Xiangwei, ZHANG, Feina
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H05B6/707—Feed lines using waveguides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/66—Circuits
    • H05B6/68—Circuits for monitoring or control
    • H05B6/686—Circuits comprising a signal generator and power amplifier, e.g. using solid state oscillators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2206/00—Aspects relating to heating by electric, magnetic, or electromagnetic fields covered by group H05B6/00
    • H05B2206/04—Heating using microwaves
    • H05B2206/044—Microwave heating devices provided with two or more magnetrons or microwave sources of other kind
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B40/00—Technologies aiming at improving the efficiency of home appliances, e.g. induction cooking or efficient technologies for refrigerators, freezers or dish washers
    • Y02B40/143—

Definitions

  • the present disclosure relates to microwave oven technology field, and more particularly to a semiconductor microwave oven and a semiconductor microwave source thereof.
  • a microwave oven is a common appliance used to heat or cook food, and its principle is to generate microwave using a microwave source.
  • the microwave makes water molecules in food generate high-frequency oscillation, so as to generate friction heat to heat or cook the food.
  • the conventional microwave oven includes a power source, a microwave source, a chamber, and a door, etc.
  • the microwave source is a core component used for generating microwave, and it is stimulated by a high-voltage power to generate microwave.
  • the microwave is transmitted through the waveguide and coupled to the chamber used for storing food.
  • the microwave source of the conventional microwave oven generates microwave using a magnetron, in which the magnetron is operated at a working voltage of around 4000 volts. Therefore, an electrical safety hazard exists, the wastage is large, and the shape of the microwave oven is limited since the volume of the magnetron is so large.
  • the semiconductor microwave technology is under a rapid development.
  • the efficiency of generating microwave by the semiconductor is improved, the cost is lower, the weight becomes lighter, and the power density per unit volume becomes larger and larger, which makes the semiconductor microwave technology possible in the microwave oven application.
  • the output power level of the semiconductor microwave source is relatively low. Therefore, it is difficult to meet the required power output of the microwave oven.
  • the present disclosure is provided based on knowledge on following problems and facts.
  • a semiconductor microwave oven in the related art has multiple semiconductor microwave sources independent of each other to generate microwaves respectively.
  • the microwaves respectively generated by the multiple semiconductor microwave sources independent of each other are combined into a high-power microwave via a power combiner, finally the combined high-power microwave is fed into a chamber, such that the microwave oven can reach a better heating efficiency;
  • the microwaves are fed into the chamber by corresponding waveguide boxes respectively, such that the high-power microwave output is realized, and the microwave oven can reach a better heating efficiency.
  • a semiconductor microwave oven includes: a body, including a chamber; a microwave input device, in communication with the chamber; a semiconductor microwave source, including: a signal source configured to generate a first microwave signal, a power divider including a first input end and N output ends, in which the first input end of the power divider is connected to the signal source, power of the first microwave signal is allocated by the power divider according to a preset proportion to generate N second microwave signals with a same frequency, and the N second microwave signals with the same frequency correspond to the N output ends respectively for outputting, where, N is an integer larger than or equal to 2, and N drive amplifiers, in which the N drive amplifiers are connected to the N output ends respectively, and each drive amplifier is configured to conduct a drive amplification on a corresponding second microwave signal and to input the second microwave signal after the drive amplification to the microwave input device, so as to transmit via the microwave input device to the chamber; and a control device, configured to control the signal source
  • a semiconductor microwave source of a semiconductor microwave oven includes: a signal source, configured to generate a first microwave signal; a power divider, including a first input end and N output ends, in which the first input end of the power divider is connected to the signal source, power of the first microwave signal is allocated by the power divider according to a preset proportion to generate N second microwave signals with a same frequency, and the N second microwave signals with the same frequency correspond to the N output ends respectively for outputting, where, N is an integer larger than or equal to 2; and N drive amplifiers, connected to the N output ends respectively, in which each drive amplifier is configured to conduct a drive amplification on a corresponding second microwave signal and to input the second microwave signal after the drive amplification to the microwave input device, so as to transmit via the microwave input device to the chamber; where, the signal source is configured to generate the first microwave signal under a control of a control device of the semiconductor microwave oven.
  • FIG. 1A is a schematic diagram of a semiconductor microwave oven in the related art
  • FIG. 1B is a schematic diagram of another semiconductor microwave oven in the related art
  • FIG. 2A is a schematic diagram of a semiconductor microwave oven according to an embodiment of the present disclosure.
  • FIG. 2B is a schematic diagram of another semiconductor microwave oven according to an embodiment of the present disclosure.
  • FIG. 3 is a schematic diagram of a power divider according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic diagram of a power combiner according to an embodiment of the present disclosure.
  • FIG. 5 is a schematic diagram of a T-type junction power divider according to an embodiment of the present disclosure
  • FIG. 6 is a schematic diagram of a Wilkinson power divider according to another embodiment of the present disclosure.
  • FIG. 7 is a schematic diagram of a directional coupler according to yet another embodiment of the present disclosure.
  • FIG. 8 is a schematic diagram of a three-way distribution of a power divider according to a first embodiment of the present disclosure
  • FIG. 9 is a schematic diagram of a four-way distribution of a power divider according to a second embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of an eight-way distribution of a power divider according to a third embodiment of the present disclosure.
  • FIG. 11 is a schematic diagram of a twelve-way distribution of a power divider according to a fourth embodiment of the present disclosure.
  • FIG. 12A is a schematic diagram of a semiconductor microwave oven according to a specific embodiment of the present disclosure.
  • FIG. 12B is a schematic diagram of a semiconductor microwave oven according to another specific embodiment of the present disclosure.
  • FIG. 13 is a schematic diagram of a loaded-line phase shifter according to an embodiment of the present disclosure.
  • FIG. 14 is a schematic diagram of a series-connected switch-line phase shifter according to an embodiment of the present disclosure.
  • FIG. 15 is a schematic diagram of a parallel-connected switch-line phase shifter according to an embodiment of the present disclosure.
  • FIG. 16 is a schematic diagram of a parallel-connected switch-line phase shifter according to another embodiment of the present disclosure.
  • a structure in which a first feature is “on” a second feature may include an embodiment in which the first feature directly contacts the second feature, and may also include an embodiment in which an additional feature is formed between the first feature and the second feature so that the first feature does not directly contact the second feature.
  • the terms “mounted,” “connected,” “coupled,” and the like should be used broadly, and for example, may be mechanical or electrical connections; may also be inner communications of two elements; may also be direct connections or indirect connections via intervening structures, which can be understood by those skilled in the art according to specific situations.
  • FIG. 2A is a schematic diagram of a semiconductor microwave oven according to an embodiment of the present disclosure.
  • the semiconductor microwave oven includes: a body 1 , a waveguide box 2 , a semiconductor microwave source 3 , a control device 4 and a microwave conversion device 5 .
  • the body 1 includes a chamber 10 .
  • the waveguide box 2 is set on the body 1 .
  • the semiconductor microwave source 3 includes: a signal source 31 , a power divider 32 , N drive amplifiers 33 and a power combiner 34 .
  • the signal source 31 is configured to generate a first microwave signal.
  • the power divider 32 includes a first input end 6 and N output ends 7 , in which the first input end 6 of the power divider 32 is connected to the signal source 31 , power of the first microwave signal is allocated by the power divider 32 according to a preset proportion to generate N second microwave signals with a same frequency, and the N second microwave signals with the same frequency correspond to the N output ends 7 respectively for outputting (i.e.
  • the N drive amplifiers 33 are connected to the N output ends 7 respectively (i.e. there is one-to-one connection between the N drive amplifiers 33 and the N output ends 7 ). Each drive amplifier 33 is configured to conduct a drive amplification on a corresponding second microwave signal.
  • the power combiner 34 includes N input ends 8 and a first output end 9 . The N input ends 8 are connected to the N drive amplifiers 33 respectively (i.e. there is one-to-one connection between the N input ends 8 and the N drive amplifiers 33 ).
  • the power combiner 34 is configured to combine the N second microwave signals after the drive amplification to obtain a third microwave signal and to output the third microwave signal via the first output end 9 .
  • the structure of the power divider 32 is show in FIG. 3 and the structure of the power combiner 34 is shown in FIG. 4 .
  • the power divider 32 divides the power of the first microwave signal provided by the signal source 31 according to the preset proportion, i.e. power of the second microwave signal outputted by each output end of the power divider 32 is in the preset proportion.
  • the preset proportion is 1
  • the power of the first microwave signal provided by the signal source 31 is equally divided by the power divider 32 , i.e. the power of the second microwave signal outputted by each output end of the power divider 32 is equal.
  • the power divider 32 may be used as the power combiner 34
  • the power combiner 34 may also be used as the power divider 32 , via exchanging the position of the input end and the output end.
  • the power divider 32 and the power combiner 34 may be a waveguide-type power divider or a microstrip-type power divider, and the power divider 32 and the power combiner 34 may be any type that may realize a power dividing or combining, such as a T-type junction power divider, a Wilkinson power divider, a waveguide magic T, a directional coupler, and a branch-line hybrid network. Therefore, both the power divider 32 and the power combiner 34 can be any one of the T-type junction power divider, the Wilkinson power divider, the waveguide magic T and the directional coupler.
  • the microwave conversion device 5 is connected to the first output end 9 of the power combiner 34 and the waveguide box 2 respectively.
  • the microwave conversion device 5 is configured to feedback the third microwave signal to the waveguide box 2 so as to transmit the third microwave signal to the chamber 10 .
  • the microwave conversion device 5 may be a feed-in device like a probe and an antenna etc.
  • the control device 4 is configured to control the signal source 31 to generate the first microwave signal. That is, the signal source 31 generates a low-power microwave signal, i.e. the first microwave signal, under the control of the control device 4 .
  • the first microwave signal is then divided into N second microwave signals via the power divider 32 and each second microwave signal is inputted into the corresponding drive amplifier 33 .
  • the second microwave signals after the drive amplification conducted by the drive amplifiers 33 are inputted into the power combiner 34 respectively.
  • the microwave signal is fed back into the waveguide box 2 via the microwave conversion device 5 and is transmitted into the chamber 10 .
  • FIG. 2B is a schematic diagram of another semiconductor microwave oven according to an embodiment of the present disclosure.
  • the semiconductor microwave oven includes: a body 1 , N waveguide boxes 2 , a semiconductor microwave source 3 , a control device 4 and N microwave conversion devices 5 , where, N is an integer larger than or equal to 2.
  • the body 1 includes a chamber 10 .
  • the N waveguide boxes 2 are set on the body 1 . As shown in FIG. 2B , N is equal to 2, and the two waveguide boxes are respectively set on the left and right side of the body 1 .
  • the semiconductor microwave source 3 includes: a signal source 31 , a power divider 32 and N drive amplifiers 33 .
  • the signal source 31 is configured to generate a first microwave signal such as a low-power microwave signal.
  • the power divider 32 includes a first input end 6 and N output ends 7 , in which the first input end 6 of the power divider 32 is connected to the signal source 31 , power of the first microwave signal is allocated by the power divider 32 according to a preset proportion to generate N second microwave signals with a same frequency, and the N second microwave signals with the same frequency correspond to the N output ends respectively for outputting(i.e. there is one-to-one correspondence relationship between the N second microwave signals and the N output ends 7 ).
  • the N drive amplifiers 33 are connected to the N output ends 7 respectively (i.e. there is one-to-one connection between the N drive amplifiers 33 and the N output ends 7 ). Each drive amplifier 33 is configured to conduct a drive amplification on the corresponding second microwave signal.
  • the structure of the power divider 32 is shown in FIG. 3 .
  • the power divider 32 divides the power of the first microwave signal provided by the signal source 31 according to a preset proportion, i.e. power of the second microwave signal outputted by each output end of the power divider 32 is in the preset proportion.
  • the preset proportion is 1
  • the power of the first microwave signal provided by the signal source 31 is equally divided by the power divider 32 , i.e. the power of the second microwave signal outputted by each output end of the power divider 32 is equal.
  • the power divider 32 may be a waveguide-type power divider or a microstrip-type power divider, and the power divider 32 may be any type that may realize a power dividing, such as a T-type junction power divider, a Wilkinson power divider, a waveguide magic T, a directional coupler, and a branch-line hybrid network. Therefore, the power divider 32 can be any one of the T-type junction power divider, the Wilkinson power divider, the waveguide magic T and the directional coupler.
  • the N microwave conversion devices 5 are correspondingly connected to the N drive amplifiers 33 and the waveguide boxes 2 respectively (i.e. there is one-to-one connection between the N microwave conversion devices 5 and the N drive amplifiers 33 , and one-to-one connection between the N microwave conversion devices 5 and the waveguide boxes 2 ).
  • Each microwave conversion device 5 is configured to feedback the second microwave signal after the drive amplification conducted by the corresponding drive amplifier 33 to the corresponding waveguide box 2 so as to transmit the second microwave signals after the drive amplification to the chamber 10 , and to combine the second microwave signals after the drive amplification into a high-power microwave signal.
  • the microwave conversion device 5 may be a feed-in device like a probe and an antenna etc.
  • the control device 4 is configured to control the signal source 31 to generate the first microwave signal. That is, the signal source 31 generates a low-power microwave signal, i.e. the first microwave signal, under the control of the control device 4 .
  • the first microwave signal is then divided into the N second microwave signals via the power divider 32 and the second microwave signals are inputted into each drive amplifier 33 .
  • the second microwave signals after the drive amplification conducted by the drive amplifiers 33 are inputted into the corresponding microwave conversion devices 5 respectively.
  • the second microwave signals after the drive amplification are fed back into the waveguide boxes 2 via the microwave conversion devices 5 and are transmitted into the chamber 10 , and are finally combined into a high-power microwave in the chamber 10 .
  • the waveguide box 2 and the microwave conversion device 5 are constructed into the microwave input device, and the number of the waveguide boxes 2 is at least 1.
  • the microwave input device includes at least one waveguide box 2 , and the at least one waveguide box 2 is set on the body 1 .
  • the semiconductor microwave source 3 further includes a power combiner 34
  • the microwave input device further includes a microwave conversion device 5 , where, the power combiner includes N input ends and a first output end, the N input ends are connected to the N drive amplifiers respectively, the microwave conversion device is respectively connected to the first output end and the waveguide box, the power combiner is configured to combine the N second microwave signals after the drive amplification to a third microwave signal and to output the third microwave signal via the first output end, and the microwave conversion device is configured to feedback the third microwave signal to the waveguide box so as to transmit the third microwave signal to the chamber.
  • the microwave input device further includes N microwave conversion devices 5 , where, the N microwave conversion devices are connected to the corresponding N drive amplifiers and the corresponding N waveguide boxes respectively, and each microwave conversion device is configured to feedback the second microwave signal after the drive amplification conducted by the corresponding drive amplifier to the corresponding waveguide box so as to transmit the second microwave signals after the drive amplification conducted by the N drive amplifiers to the chamber.
  • the semiconductor microwave oven in embodiments of the present disclosure includes: a body, a microwave input device, a semiconductor microwave source and a control device.
  • the body includes a chamber, and the microwave input device is in communication with the chamber.
  • the semiconductor microwave source includes a signal source, a power divider and N drive amplifiers.
  • the signal source is configured to generate a first microwave signal.
  • the power divider includes a first input end and N output ends, in which the first input end of the power divider is connected to the signal source, power of the first microwave signal is allocated by the power divider according to a preset proportion to generate N second microwave signals with a same frequency, and the N second microwave signals with the same frequency correspond to the N output ends for outputting, where, N is an integer larger than or equal to 2.
  • the N drive amplifiers are connected to the N output ends respectively.
  • Each drive amplifier is configured to conduct a drive amplification on a corresponding second microwave signal and to input the N second microwave signal after the drive amplification to the microwave input device, so as to transmit the second microwave signal via the microwave input device to the chamber.
  • the control device is configured to control the signal source to generate the first microwave signal.
  • the drive amplifier 33 further includes: a drive component 331 , i.e. a drive stage, and an amplification component 332 , i.e. a final stage.
  • the drive component 331 is configured to conduct a first drive amplification on the second microwave signal so as to generate a fourth microwave signal.
  • the amplification component 332 is connected to the drive component 331 , and configured to conduct a second amplification on the fourth microwave signal so as to generate the second microwave signal after the drive amplification.
  • the number of the drive components 331 and the number of the amplification components 332 are equal to the number of the output ends of the power divider 32 and the number of the input ends of the power combiner 34 .
  • Power of the first microwave signal is greater than power of the second microwave signal
  • power of the fourth microwave signal is greater than power of the second microwave signal
  • power of the second microwave signal after the drive amplification is greater than power of the fourth microwave signal
  • the power divider 32 is a T-type junction power divider, as shown in FIG. 5 , the low-power first microwave signal generated by the signal source 31 is inputted via the first input end 6 .
  • Two impedance transforming lines 322 with 1 ⁇ 4 wavelength ( ⁇ ) are set, and the characteristic impedances are Z 02 and Z 03 respectively.
  • Different power dividing for the outputted second microwave signals is realized by setting impedances of Z 02 and Z 03 , and the second microwave signals after dividing are outputted via two output ends 7 respectively.
  • the T-type junction power divider may be used as the power combiner 34 conversely.
  • the power divider 32 is a Wilkinson power divider, as shown in FIG. 6 , the low-power first microwave signal generated by the signal source 31 is inputted via the input end 6 of the Wilkinson power divider.
  • Two impedance transforming lines 322 with 1 ⁇ 4 wavelength are set, and the characteristic impedances are Z 02 and Z 03 respectively, and an isolation resistance 321 is set, so as to ensure that the two output ends 7 of the Wilkinson power divider are isolated. If any one of the output ends 7 is dismatched, there will be current flows past the isolation resistance 321 and the power will be wasted on the isolation resistance 321 , which shall not affect the output of another output end 7 .
  • the two output ends 7 then respectively pass impedance transforming lines 323 with 1 ⁇ 4 wavelength, such that the power dividing is realized.
  • the characteristic impedance of the input end is Z 0
  • the characteristic impedance of the impedance transforming lines 323 is Z 0 .
  • the Wilkinson power divider may be used as the power combiner 34 conversely.
  • the power divider 32 when the power divider 32 is a directional coupler, as shown in FIG. 7 , it includes two parallel conduction bands 324 , the coupling is realized via two branch conduction bands 325 , and the length and the interval of the branch conduction bands 325 are both 1 ⁇ 4 wavelength.
  • the low-power first microwave signal generated by the signal source 31 is inputted via an input end 61 .
  • the input end 61 has no reflection
  • the power inputted is outputted by ends 72 and 73
  • end 64 has no output, i.e. ends 61 and 64 are isolated with each other.
  • the characteristic impedance of the branch conduction bands are similar with input and output lines, and the characteristic resistance of the parallel conduction bands is 1/ ⁇ square root over (2) ⁇ of the input and output lines.
  • the directional coupler may be used as the power combiner 34 conversely.
  • the low-power first microwave signal generated by the signal source 31 is inputted via the first input end 6 , and it is divided into three signals after conducting a first stage impedance conversion, and finally three second microwave signals are outputted via three output ends respectively after conducting a second stage impedance change.
  • the low-power first microwave signal generated by the signal source 31 is inputted via the first input end 6 , and it is divided into two signals after conducting a first stage impedance conversion, then the two signals are divided into four signals after conducting a second stage impedance conversion and a following third stage impedance conversion, and finally four second microwave signals are outputted via four output ends respectively.
  • the low-power first microwave signal generated by the signal source 31 is inputted via the first input end 6 , and it is divided into two signals after conducting a first stage impedance conversion, then the two signals are divided into four signals after conducting a second stage impedance conversion and a following third stage impedance conversion, and then the four signals are divided into eight signals after conducting a fourth stage impedance conversion, and finally eight second microwave signals are outputted via eight output ends correspondingly.
  • the low-power first microwave signal generated by the signal source 31 is inputted via the first input end 6 , and it is divided into two signals after conducting a first stage impedance conversion, then the two signals are divided into six signals after conducting a second stage impedance conversion and a following third stage impedance conversion, and then the six signals are divided into twelve signals after conducting a fourth stage impedance conversion, and finally twelve second microwave signals are outputted via twelve output ends correspondingly.
  • the low-power first microwave signal generated by the signal source 31 is inputted via the first input end 6 , and it is divided into two or three signals after conducting a first stage impedance conversion, and the two or three signals are then divided after conducting a second stage impedance conversion. If the requirement of the number of the microwave sources may still not be satisfied, signals may be conducted the third stage and fourth stage impedance conversion, will finally be outputted from multiple output ends 7 .
  • the semiconductor microwave source 3 further includes N phase shifters 35 .
  • the N phase shifters 35 are respectively connected between the N output ends 7 and the N drive amplifiers 33 , in which, each phase shifter 35 is configured to perform a phase adjustment on the second microwave signal output by the corresponding output end in the N output ends under the control of the control device 4 , such that the efficiency of the semiconductor microwave source is improved.
  • the phase shifter 35 may be any one of a phase shifter type that may be suitable for microwave thermal spectrum like a PIN diode phase shifter, a ferrite phase shifter, and a vector modulation phase shifter.
  • the phase shifter 35 may also be any one of a loaded-line phase shifter, and a switch-line phase shifter.
  • phase shifter 35 is the loaded-line phase shifter, as shown in FIG. 13 , a controllable reactance element 352 is provided on a uniform transmission line 351 by the loaded-line phase shifter, and the reactance element 352 and the transmission line 351 can be connected parallelly or seriesly, in which, a phase shift amount may be introduced by controlling the reactance value of the reactance element by the control device 4 .
  • FIG. 14 is a schematic diagram of a series-connected switch-line phase shifter.
  • the second microwave signal is transmitted via a transmission route 1 1 ; and when the switch status are opposite, the switches S 1 and S 4 are disengaged, and S 2 and S 3 are engaged, the second microwave signal is transmitted via a transmission route 1 2 , a phase change is realized according to the change of the transmission route.
  • the phase shifter shown in FIG. 15 is a parallel switch-line phase shifter.
  • a switch may also be replaced by a diode, as shown in FIG. 16 .
  • the number of the signal source for generating microwave signals is 1 . Therefore, multiple-route semiconductor power sources share a same signal source, such that the multiple-route semiconductor power sources can be ensured to work under a same frequency, and thus realizing a high-efficiency power output, and ensuring the heating efficiency of the semiconductor microwave oven.
  • the second microwave signals with the same frequency outputted by the N output ends of the power divider share a same signal source so as to ensure to work in the same frequency, such that a high-efficiency power output is realized and a heating efficiency is ensured.
  • the structure of the semiconductor microwave oven in the embodiments of the present disclosure is more simple and compact, and it is cost-saving.
  • a semiconductor microwave source of a semiconductor microwave oven is further provided in embodiments of the present disclosure.
  • the semiconductor microwave source includes: a signal source, a power divider and N drive amplifiers.
  • the signal source is configured to generate a first microwave signal.
  • the power divider includes a first input end and N output ends, in which the first input end of the power divider is connected to the signal source, power of the first microwave signal is allocated by the power divider according to a pre-set proportion to generate N second microwave signals with a same frequency, and the N second microwave signals with the same frequency correspond to the N output ends respectively for outputting, where, N is an integer larger than or equal to 2.
  • the N drive amplifiers are connected to the N output ends respectively.
  • Each drive amplifier is configured to conduct a drive amplification on a corresponding second microwave signal and to input the second microwave signal after the drive amplification to the microwave input device, so as to transmit the second microwave signal after the drive amplification via the microwave input device to the chamber.
  • the signal source is configured to generate the first microwave signal under a control of a control device of the semiconductor microwave oven.
  • the microwave input device includes at least one waveguide box, and the at least one waveguide box is set on the body. If the number of the waveguide box is 1 , the semiconductor microwave source further includes a power combiner, and the microwave input device further includes a microwave conversion device, where, the power combiner includes N input ends and a first output end, the N input ends are connected to the N drive amplifiers respectively, the microwave conversion device is respectively connected to the first output end and the waveguide box, the power combiner is configured to combine the N second microwave signals after the drive amplification to obtain a third microwave signal and to output the third microwave signal via the first output end, and the microwave conversion device is configured to feedback the third microwave signal to the waveguide box so as to transmit the third microwave signal to the chamber.
  • the microwave input device further includes N microwave conversion devices, the N microwave conversion devices are connected to the corresponding N drive amplifiers and the corresponding N waveguide boxes respectively, and each microwave conversion device is configured to feedback the second microwave signal after the drive amplification conducted by the corresponding drive amplify to the corresponding waveguide box so as to transmit the second microwave signals after the drive amplification conducted by the N drive amplifiers to the chamber.
  • the above semiconductor microwave source 3 of the semiconductor microwave oven includes: a signal source 31 , a power divider 32 , N drive amplifiers 33 and a power combiner 34 .
  • the signal source 31 is configured to generate a first microwave signal.
  • the power divider 32 includes a first input end 6 and N output ends 7 , in which the first input end 6 of the power divider 32 is connected to the signal source 31 , power of the first microwave signal is allocated by the power divider 32 according to a pre-set proportion to generate N second microwave signals with a same frequency, and the N second microwave signals with the same frequency correspond to the N output ends 7 for outputting, where, N is an integer larger than or equal to 2.
  • the N drive amplifiers 33 are connected to the N output ends 7 respectively. Each drive amplifier 33 is configured to conduct a drive amplification on a corresponding second microwave signal.
  • the power combiner 34 includes N input ends 8 and a first output end 9 . The N input ends 8 and the N drive amplifiers 33 are correspondingly connected.
  • the power combiner 34 is configured to combine the N second microwave signals after the drive amplification to obtain a third microwave signal and to output the third microwave signal to the microwave conversion device 5 via the first output end 9 , and then the third microwave signal is fed into the waveguide box 2 by the microwave conversion device 5 , so as to transmit the third microwave signal to the chamber 10 .
  • the signal source 31 is configured to c generate the first microwave signal under a control of the control device 4 of the semiconductor microwave oven.
  • the above semiconductor microwave source 3 of the semiconductor microwave oven includes: a signal source 31 , a power divider 32 , and N drive amplifiers 33 .
  • the signal source 31 is configured to generate a first microwave signal, e.g. a low-power microwave signal.
  • the power divider 32 includes a first input end 6 and N output ends 7 , in which the first input end 6 of the power divider 32 is connected to the signal source 31 , power of the first microwave signal is allocated by the power divider 32 according to a pre-set proportion to generate N second microwave signals with a same frequency, and the N second microwave signals with the same frequency correspond to the N output ends respectively for outputting, where, N is an integer larger than or equal to 2.
  • the N drive amplifiers 33 are connected to the N output ends 7 respectively. Each drive amplifier 33 is configured to conduct a drive amplification on a corresponding second microwave signal.
  • the N second microwave signals after the drive amplification are sent to the corresponding microwave input devices 5 by the N drive amplifiers 33 respectively, and then are fed into the corresponding waveguide boxes 2 by the N microwave input devices 5 , so as to transmit via the microwave input device to the chamber 10 ; where, the signal source 31 is configured to generate the first microwave signal under a control of the control device 4 of the semiconductor microwave oven.
  • the power divider 32 and the power combiner 34 may be a waveguide-type power divider or a microstrip-type power divider, and the power divider 32 and the power combiner 34 may be any type that may realize a power dividing or combining, such as a T-type junction power divider, a Wilkinson power divider, a waveguide magic T, a directional coupler, and a branch-line hybrid network. Therefore, both the power divider 32 and the power combiner 34 can be any one of the T-type junction power divider, the Wilkinson power divider, the waveguide magic T and the directional coupler.
  • the drive amplifier 33 further includes: a drive component 331 and an amplification component 332 .
  • the drive component 331 is configured to conduct a first drive amplification on the second microwave signal so as to generate a fourth microwave signal.
  • the amplification component 332 is connected to the drive component, and is configured to conduct a second amplification on the fourth microwave signal so as to generate the second microwave signal after the drive amplification.
  • the number of the drive components 331 and the number of the amplification components 332 are equal to the number of the output end of the power divider 32 and the number of the input end of the power combiner 34 .
  • Power of the first microwave signal is greater than power of the second microwave signal
  • power of the fourth microwave signal is greater than power of the second microwave signal
  • power of the second microwave signal after the drive amplification is greater than power of the fourth microwave signal
  • the above semiconductor microwave source of the semiconductor microwave oven further includes N phase shifters 35 .
  • the N phase shifters 35 are respectively connected between the N output ends 7 and the N drive amplifiers 33 , in which, each phase shifter 33 is configured to perform a phase adjustment on the second microwave signal output by the corresponding output end in the N output ends under the control of the control device 4 , such that the efficiency of the semiconductor microwave source is improved.
  • the phase shifter is any one of a PIN diode phase shifter, a ferrite phase shifter, a vector modulation phase shifter, a loaded-line phase shifter, and a switch-line phase shifter.
  • the second microwave signals with the same frequency outputted respectively by the N output ends of the power divider share a same signal source so as to ensure to work in the same frequency, such that a high-efficiency power output is realized and a heating efficiency is ensured.
  • the structure of the semiconductor microwave oven in the embodiments of the present disclosure is more simple and compact, and it is cost-saving.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Control Of High-Frequency Heating Circuits (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Electric Ovens (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
US15/314,060 2014-05-28 2014-11-06 Semiconductor microwave oven and semiconductor microwave source thereof Active 2036-02-06 US10588182B2 (en)

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CN201410232874 2014-05-28
CN201410232381.6A CN104676670A (zh) 2014-05-28 2014-05-28 半导体微波炉及其半导体微波源
CN201410232874.X 2014-05-28
CN201410232381 2014-05-28
CN201410232874.XA CN104676671A (zh) 2014-05-28 2014-05-28 半导体微波炉及其半导体微波源
CN201410232381.6 2014-05-28
PCT/CN2014/090428 WO2015180416A1 (zh) 2014-05-28 2014-11-06 半导体微波炉及其半导体微波源

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10763814B2 (en) 2016-08-09 2020-09-01 John Bean Technologies Corporation Radio frequency processing apparatus and method
US20180323091A1 (en) * 2017-05-03 2018-11-08 Applied Materials, Inc. Method and apparatus for uniform thermal distribution in a microwave cavity during semiconductor processing
DE102017111319A1 (de) * 2017-05-24 2018-11-29 Miele & Cie. Kg Einrichtung zur Erzeugung und Transmission von Hochfrequenzwellen (HF-Wellen)
ES2844648T3 (es) * 2017-08-23 2021-07-22 Vorwerk Co Interholding Dispositivo de alimentación de microondas en un horno de microondas
CN111023176B (zh) * 2019-12-31 2022-12-09 广东美的厨房电器制造有限公司 微波烹饪设备及其控制装置
TWI786015B (zh) * 2022-04-22 2022-12-01 宏碩系統股份有限公司 單源微波加熱裝置
DE102022131522A1 (de) 2022-11-29 2024-05-29 Topinox Sarl Verstärkerschaltung für Mikrowellensignale sowie Gargerät
DE102022131525A1 (de) 2022-11-29 2024-05-29 Tq-Systems Gmbh Verstärkerschaltung für Mikrowellensignale sowie Mikrowellenvorrichtung

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150589A (en) 1979-05-12 1980-11-22 Sharp Kk Electronic range
JPS56132793A (en) 1980-03-19 1981-10-17 Hitachi Netsu Kigu Kk High frequency heater
EP0085110A1 (de) 1981-08-07 1983-08-10 Matsushita Electric Industrial Co., Ltd. Hochfrequenzerwärmer
JP2000357583A (ja) 1999-06-15 2000-12-26 Mitsubishi Electric Corp 電子レンジ
JP2008066292A (ja) 2006-08-08 2008-03-21 Matsushita Electric Ind Co Ltd マイクロ波処理装置
JP2008269784A (ja) 2008-07-03 2008-11-06 Matsushita Electric Ind Co Ltd 半導体記憶装置
WO2009011111A1 (ja) 2007-07-13 2009-01-22 Panasonic Corporation マイクロ波加熱装置
WO2009050893A1 (ja) 2007-10-18 2009-04-23 Panasonic Corporation マイクロ波加熱装置
WO2011004561A1 (ja) 2009-07-10 2011-01-13 パナソニック株式会社 マイクロ波加熱装置およびマイクロ波加熱制御方法
CN101979923A (zh) 2010-11-17 2011-02-23 美的集团有限公司 微波炉
WO2011033740A1 (ja) 2009-09-16 2011-03-24 パナソニック株式会社 マイクロ波加熱装置
US20110168699A1 (en) * 2008-09-17 2011-07-14 Panasonic Corporation Microwave heating apparatus
US20120067873A1 (en) * 2009-05-19 2012-03-22 Panasonic Corporation Microwave heating device and microwave heating method
US20120103972A1 (en) 2009-09-29 2012-05-03 Toshiyuki Okajima High-frequency heating device and high-frequency heating method
US20140305933A1 (en) * 2011-10-31 2014-10-16 Midea Group Co., Ltd Semiconductor microwave oven and microwave feeding structure thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4992525B2 (ja) * 2007-04-16 2012-08-08 パナソニック株式会社 マイクロ波処理装置
EP1997746B1 (de) * 2007-05-30 2010-09-08 Eurokeg B.V. Schließventil und Behälter damit

Patent Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150589A (en) 1979-05-12 1980-11-22 Sharp Kk Electronic range
JPS56132793A (en) 1980-03-19 1981-10-17 Hitachi Netsu Kigu Kk High frequency heater
EP0085110A1 (de) 1981-08-07 1983-08-10 Matsushita Electric Industrial Co., Ltd. Hochfrequenzerwärmer
JP2000357583A (ja) 1999-06-15 2000-12-26 Mitsubishi Electric Corp 電子レンジ
US20100176121A1 (en) * 2006-08-08 2010-07-15 Panasonic Corporation Microwave processing apparatus
JP2008066292A (ja) 2006-08-08 2008-03-21 Matsushita Electric Ind Co Ltd マイクロ波処理装置
CN101502170A (zh) 2006-08-08 2009-08-05 松下电器产业株式会社 微波处理装置
WO2009011111A1 (ja) 2007-07-13 2009-01-22 Panasonic Corporation マイクロ波加熱装置
CN101743778A (zh) 2007-07-13 2010-06-16 松下电器产业株式会社 微波加热装置
US20100176123A1 (en) * 2007-07-13 2010-07-15 Makoto Mihara Microwave heating apparatus
WO2009050893A1 (ja) 2007-10-18 2009-04-23 Panasonic Corporation マイクロ波加熱装置
EP2205043A1 (de) 2007-10-18 2010-07-07 Panasonic Corporation Mikrowellenheizvorrichtung
JP2008269784A (ja) 2008-07-03 2008-11-06 Matsushita Electric Ind Co Ltd 半導体記憶装置
US20110168699A1 (en) * 2008-09-17 2011-07-14 Panasonic Corporation Microwave heating apparatus
US20120067873A1 (en) * 2009-05-19 2012-03-22 Panasonic Corporation Microwave heating device and microwave heating method
WO2011004561A1 (ja) 2009-07-10 2011-01-13 パナソニック株式会社 マイクロ波加熱装置およびマイクロ波加熱制御方法
EP2453716A1 (de) 2009-07-10 2012-05-16 Panasonic Corporation Mikrowellen-heizvorrichtung und mikrowellen-heizsteuerverfahren
WO2011033740A1 (ja) 2009-09-16 2011-03-24 パナソニック株式会社 マイクロ波加熱装置
US20120152939A1 (en) 2009-09-16 2012-06-21 Panasonic Corporation Microwave heating device
US20120103972A1 (en) 2009-09-29 2012-05-03 Toshiyuki Okajima High-frequency heating device and high-frequency heating method
CN102474924A (zh) 2009-09-29 2012-05-23 松下电器产业株式会社 高频加热装置以及高频加热方法
CN101979923A (zh) 2010-11-17 2011-02-23 美的集团有限公司 微波炉
US20140305933A1 (en) * 2011-10-31 2014-10-16 Midea Group Co., Ltd Semiconductor microwave oven and microwave feeding structure thereof

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Canadian Intellectual Property Office, Office Action for CA2950450, dated Sep. 28, 2017.
EPO, Office Action for EP Application No. 14893395, dated Jan. 5, 2018.
ISA/CN, International Search Report for PCT/CN2014/090428 dated Mar. 10, 2015.
ISA/CN, Written Opinion of the International Searching Authority for PCT/CN2014/090428 dated Mar. 10, 2015.
SIPO, First Office Action for CN Application No. 201410232381, dated Jul. 4, 2016.
The State Intellectual Property Office of People's Republic of China, First Office Action for CN201410232874.X, dated Aug. 9, 2016.

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EP3151636A4 (de) 2018-02-07
EP3151636B1 (de) 2022-01-05
JP2017525121A (ja) 2017-08-31
US20170188417A1 (en) 2017-06-29
EP3151636A1 (de) 2017-04-05

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