US10396007B2 - Semiconductor package with plateable encapsulant and a method for manufacturing the same - Google Patents

Semiconductor package with plateable encapsulant and a method for manufacturing the same Download PDF

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Publication number
US10396007B2
US10396007B2 US15/448,018 US201715448018A US10396007B2 US 10396007 B2 US10396007 B2 US 10396007B2 US 201715448018 A US201715448018 A US 201715448018A US 10396007 B2 US10396007 B2 US 10396007B2
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Prior art keywords
encapsulant
electrically conductive
package
conductive material
plating
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US15/448,018
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US20170256472A1 (en
Inventor
Sook Woon Chan
Chau Fatt Chiang
Kok Yau Chua
Soon Lock Goh
Swee Kah Lee
Joachim Mahler
Mei Chin Ng
Beng Keh See
Guan Choon Matthew Nelson TEE
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Infineon Technologies AG
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Infineon Technologies AG
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Publication of US20170256472A1 publication Critical patent/US20170256472A1/en
Assigned to INFINEON TECHNOLOGIES AG reassignment INFINEON TECHNOLOGIES AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SEE, BENG KEH, TEE, GUAN CHOON MATTHEW NELSON, MNG, MEI CHIN, CHAN, SOOK WOON, CHIANG, CHAU FATT, CHUA, KOK YAU, GOH, SOON LOCK, LEE, SWEE KAH, MAHLER, JOACHIM
Priority to US16/514,853 priority Critical patent/US11081417B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D201/00—Coating compositions based on unspecified macromolecular compounds
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/002—Priming paints
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1637—Composition of the substrate metallic substrate
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    • C23C18/166—Process features with two steps starting with addition of reducing agent followed by metal deposition
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C18/1601—Process or apparatus
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    • C23C18/1689—After-treatment
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/182—Radiation, e.g. UV, laser
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
    • C23C18/1834—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/165—Material
    • H01L2224/16501—Material at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the present invention relates to a package, a method of manufacturing a package, in particular a semiconductor package, a premix of a plateable encapsulant, a method of manufacturing a plateable encapsulant, an encapsulant, and a method of manufacturing an encapsulant.
  • Packages may be denoted as encapsulated electronic chips with electrical connects extending out of the encapsulant and being mounted to an electronic periphery, for instance on a printed circuit board.
  • Packaging cost is an important driver for the industry. Related with this are performance, dimensions and reliability. The different packaging solutions are manifold and have to address the needs of the application. There are applications, where high performance is required, others, where reliability is the top priority—but all requires lowest possible cost.
  • a package in particular a semiconductor package
  • a package which comprises a first encapsulant configured so that electrically conductive material is plateable thereon, and a second encapsulant (in particular made of another material than the first encapsulant) configured so that electrically conductive material is not plateable thereon.
  • a method of manufacturing a package comprising forming a first encapsulant configured so that electrically conductive material is plateable (in particular is plateable in an electroless manner) thereon, forming a second encapsulant configured so that electrically conductive material is not plateable thereon, and plating (in particular electroless plating) electrically conductive material selectively on a surface of the first encapsulant without plating electrically conductive material on a surface of the second encapsulant.
  • a premix of a plateable encapsulant comprising a transition metal, a polymer cluster, and a coupling agent between the transition metal and the polymer cluster.
  • a method of manufacturing a plateable encapsulant comprises providing a transition metal-polymer compound comprising a transition metal and a polymer cluster, removing a surface portion of the polymer cluster to thereby expose the transition metal, and activating an exposed surface of the transition metal.
  • an encapsulant for encapsulating a semiconductor chip comprising an electrically insulating encapsulant base material, and an activatable plating catalyst being convertible from a deactivated state, in which the encapsulant is non-plateable with electrically conductive material, into an activated state, in which the encapsulant is plateable with electrically conductive material.
  • a method of manufacturing an encapsulant comprises providing a compound (such as a material composition, in particular a solid compound) comprising an electrically insulating encapsulant base material and an activatable plating catalyst in a deactivated state, in which the compound is non-plateable with electrically conductive material, and converting at least part of the plating catalyst from the deactivated state into an activated state, in which the compound is plateable with electrically conductive material.
  • a compound such as a material composition, in particular a solid compound
  • a plateable first encapsulant and a non-plateable second encapsulant are used for a package comprising an integrated antenna.
  • a first section of a package is formed by a plateable encapsulant, on which plating (in particular electroless plating) of electrically conductive material is enabled, and another section of the package is formed by a non-plateable encapsulant, on which plating (in particular electroless plating) of electrically conductive material is disabled.
  • plating in particular electroless plating
  • non-plateable encapsulant on which plating (in particular electroless plating) of electrically conductive material is disabled.
  • a premix for a plateable encapsulant is provided based on which a plateable encapsulant can be easily produced by simply exposing and activating a transition metal forming part of this premix.
  • Activation of the transition metal may involve a conversion of the transition metal into a charging state in which it significantly better electrically conductive than before the conversion, thereby rendering the activated transition metal capable of serving as a basis for a plating procedure, in particular an electroless plating procedure.
  • a selectively activatable encapsulant which is plateable when being activated, i.e. electrically conductive material can be deposited on the activated encapsulant by plating, in particular electroless plating.
  • the actual encapsulation function can be accomplished by an electrically insulating (and preferably thermally conductive) encapsulant base material of the compound, whereas platability can be made possible by the plating catalyst (such as a transition metal) of the compound.
  • the plating catalyst can catalyse the plating procedure when being activated, in particular when being brought in a highly electrically conductive (for instance metallic/electrically neutral) state.
  • the term “package” may particularly denote at least one at least partially encapsulated semiconductor chip with at least one external electric contact.
  • plating may particularly denote surface covering or coating by which an electrically conductive material such as a metal is deposited on an at least partially electrically conductive surface.
  • Plating may be electroplating or electroless plating.
  • Electroless plating which may also denoted as chemical or auto-catalytic plating, may be denoted as a non-galvanic plating method that involves reactions in a solution (in particular in an aqueous solution), which occur without the use of external electrical power.
  • the term “encapsulant” may particularly denote a substantially electrically insulating and preferably thermally conductive material surrounding (preferably hermetically surrounding) a semiconductor chip or the like in order to provide mechanical protection, electrical installation, and optionally a contribution to heat removal during operation.
  • a substantially electrically insulating and preferably thermally conductive material surrounding (preferably hermetically surrounding) a semiconductor chip or the like in order to provide mechanical protection, electrical installation, and optionally a contribution to heat removal during operation.
  • Such an encapsulant can be, for example, a mold compound or a laminate.
  • plateable may particularly denote a property of a base material on which electrically conductive material can be applied by plating, in particular by electroless plating.
  • a plateable base may be provided from a material which comprises metallic particles, in particular in an electrically neutral state.
  • non-plateable may particularly denote a property of a base material on which electrically conductive material cannot be applied by plating, in particular by electroless plating.
  • a non-plateable base may be provided from a material which is substantially electrically insulating.
  • the term “premix” of an encapsulant may particularly denote a material (such as a chemical composition) or another preform based on which an encapsulant, in particular a plateable encapsulant, can be manufactured.
  • plating catalyst may particularly denote a component of a compound used for manufacturing an encapsulant having the property of serving as a base for depositing electrically conductive material by plating.
  • the plating catalyst may be the actual component which promotes the plating procedure, such as a transition metal.
  • transition metal may particularly denote an element whose atom has a partially filled d sub-shell, or which can give rise to cations with an incomplete d sub-shell.
  • transition metals are palladium, copper or nickel.
  • the package comprises at least one semiconductor chip at least partially embedded or encapsulated in the first encapsulant and/or the second encapsulant.
  • a semiconductor chip may comprise a semiconductor substrate (such as a piece of silicon) in which at least one integrated circuit element (such as a transistor or a diode) is formed or integrated in an active region of the chip.
  • the package comprises at least one antenna structure at least partially on and/or in at least one of the first encapsulant and the second encapsulant, in particular at least partially located at a surface of the package.
  • Such an antenna structure may be a transmitter antenna capable of transmitting electromagnetic radiation, a receiver antenna capable of receiving electromagnetic radiation, or a transceiver antenna capable of transmitting and receiving electromagnetic radiation.
  • Such an antenna structure may be electrically connected to the above-mentioned semiconductor chip which, in turn, may process a signal received by the antenna and/or may send a signal to the antenna forming the basis for transmitted electromagnetic radiation.
  • the first encapsulant and the second encapsulant is a mold compound.
  • the first encapsulant may be a mold compound with activated or activatable metallic particles (for instance electrically neutral metallic particles) in a mold matrix (for instance made of a polymer material).
  • the second encapsulant may be a mold compound without metallic particles or with deactivated metallic particles (for instance electrically charged metallic particles) in a mold matrix (for instance made of a polymer material).
  • any of the first encapsulant and the second encapsulant may be configured as a laminate.
  • At least part of a surface (in particular an exterior surface) of the first encapsulant is plated with electrically conductive material.
  • At least part of a lateral sidewall of the first encapsulant is plated with electrically conductive material.
  • a planar wall of the first encapsulant is plated with a planar layer of electrically conductive material.
  • the activatable plating catalyst may be convertible into the activated state so that a planar wall of the encapsulant is plateable with a planar layer of electrically conductive material.
  • both the planar wall as well as the planar layer may be free of a curvature.
  • homogeneous plating may be enabled without the formation of pronounced indentations in a surface of the package.
  • the plated electrically conductive material is configured for electrically connecting at least one semiconductor chip with at least one antenna structure of the package.
  • the plated electrically conductive material is configured for providing an electromagnetic interference shielding (EMI) of the package.
  • EMI electromagnetic interference shielding
  • the plated electrically conductive material is configured for electrically connecting at least one semiconductor chip with at least one solder pad of the package. This may render a via connection between solder pad and semiconductor chip dispensable.
  • the package comprises at least one vertical through connection extending vertically through the first encapsulant.
  • a via connection may connect, in one embodiment, an antenna structure with a semiconductor chip.
  • At least part of the second encapsulant is configured as at least one vertically extending isolation bar vertically protruding into the first encapsulant, in particular at least one vertically extending isolation bar forming at least one corner section of the package.
  • isolation bars which may protrude beyond a base portion of the second encapsulant, selective interruptions of plating around the first encapsulant may be defined.
  • a surface (in particular a sidewall) of the first encapsulant is exposed before the plating (in particular is exposed by sawing) while the first encapsulant and the second encapsulant of the package are arranged on a temporary carrier.
  • a temporary carrier such as a chemical resistance tape or UV foil.
  • the package comprises at least one redistribution layer on and/or in the second encapsulant.
  • the second encapsulant may hence serve as a redistribution layer and may translate between the tiny pads of the semiconductor chip and the larger dimensions of external electric contacts of a printed circuit board (PCB) or the like.
  • PCB printed circuit board
  • the small dimensions of the chip world are transferred by the redistribution layer into the larger dimensions of the world of the mounting basis such as a PCB on which the electronic component or package may be mounted.
  • the package comprises at least one solder structure on at least one of the first encapsulant and the second encapsulant. Via such a solder structure, a connection to a mounting base such as a printed circuit board may be established.
  • the package is configured as a gesture sensor package.
  • a gesture to be detected may result in a characteristic change of a signal detected by an antenna structure of the package.
  • information indicative of a gesture can be derived.
  • An electric connection between the antenna structure and the semiconductor chip may be accomplished by a plating structure on an exterior surface of the first encapsulant.
  • the plateable metal (such as a transition metal) comprises at least one material of a group consisting of, for example, palladium, nickel, copper, cobalt, silver.
  • the transition metal may be provided in metallic form or in form of a metal compound, and in any desired charging state.
  • other metals or metal compounds, in particular other transition metals can be used as well.
  • the coupling agent comprises at least one material of a group consisting of N (nitrogen) in particular from an amino group or an azole group, or C (carbon) in particular from a carbonyl group, and P (phosphor) in particular from an organophosphine group.
  • the coupling agent may provide a coupling between the transition metal and the polymer cluster and may hence contribute to stability or integrity of the premix and the plateable encapsulant.
  • the polymer cluster comprises at least one material of a group consisting of a wax, an adhesion promoter, a mold compound catalyst, and a coupling agent for silica.
  • the polymer cluster may also comprise epoxy resin.
  • the polymer cluster may contribute a mechanical protection function and an electrical insulation function to the encapsulant configured as plateable mold compound.
  • the polymer cluster comprises at least one rest, in particular at least one of a hydrophobic group, and a hydrophilic group.
  • a hydrophobic group in particular at least one of a hydrophobic group, and a hydrophilic group.
  • Such hydrophilic and hydrophobic groups can passivate the transition metal in the deactivated state and can be removed selectively for exposing the transition metal for subsequent activation, followed by plating.
  • the transition metal is provided in the premix or the encapsulant in a concentration in a range between 10 ppm and 10,000 ppm, in particular between 25 ppm and 2,000 ppm. It has turned out that even such small concentrations of transition metal allow the resulting encapsulant to be plated while simultaneously maintaining the substantial electrically insulating property of the encapsulant.
  • the premix further comprises a complexing agent coupled to the transition metal.
  • a complexing agent may be configured to enhance a chemical stearic effect. This allows to maintain the dielectric property of the encapsulant in the deactivated form.
  • the method comprises using, as the transition metal-polymer compound, a premix having the above-mentioned features, i.e. comprising at least transition metal, coupling agent, and polymer cluster.
  • the removing of a surface portion of the polymer cluster to thereby expose the transition metal is carried out by laser processing followed by an alkaline treatment (for instance using NaOH or KOH).
  • the removing may be carried out by a plasma treatment (for instance by an argon plasma treatment).
  • a pure laser processing may accomplish the removing, for example using an argon gas laser.
  • laser processing for instance using a high power laser
  • chemical treatment in particular by a weak base such as 3% to 15% monoethanolamine
  • the plateable encapsulant and/or the non-plateable encapsulant comprises or consists of at least one of the group consisting of a mold compound and a laminate.
  • the respective encapsulant comprises a laminate, in particular a printed circuit board laminate.
  • laminate structure may particularly denote an integral flat member formed by electrically conductive structures and/or electrically insulating structures which may be connected to one another by applying a pressing force. The connection by pressing may be optionally accompanied by the supply of thermal energy. Lamination may hence be denoted as the technique of manufacturing a composite material in multiple layers.
  • a laminate can be permanently assembled by heat and/or pressure and/or welding and/or adhesives.
  • the respective encapsulant comprises a mold, in particular a plastic mold.
  • a correspondingly encapsulated chip may be provided by placing the electronic chip (if desired together with other components) between an upper mold die and a lower mold die and to inject liquid mold material therein. After solidification of the mold material, the package formed by the encapsulant with the electronic chip in between is completed.
  • the mold may be filled with particles improving its properties, for instance its heat removal properties.
  • the plating catalyst comprises a metallic material (such as palladium, Pd) being electrically insulating or poorly electrically conductive (for instance Pd 2+ ) in the deactivated state and being electrically conductive (for instance Pd 0 ) in the activated state.
  • a metallic material such as palladium, Pd
  • the encapsulant comprises an inactive material (which may be constituted by at least part of rest(s) of the polymer cluster and/or the complexing agent) covering the plating catalyst (such as a transition metal like palladium) in the deactivated state and being removable (for instance by a laser treatment and/or a plasma treatment) for exposing the plating catalyst for activation.
  • the inactive material is an electrically insulating inactive material.
  • the method comprises removing at least part of the inactive material to thereby expose at least part of the plating catalyst for subsequently converting at least part of the plating catalyst from the deactivated state into the activated state.
  • a portion of the plating catalyst has been exposed by removing a section of the inactive material, it can be chemically activated by a conversion reaction.
  • Such a conversion may result in an increase of the electrical conductivity of the exposed part of the plating catalyst, for instance from a poorly electrically conductive state (like palladium in an Pd 2+ state) into a metallically conductive state (like palladium in an Pd 0 state).
  • the conversion reaction may hence be a chemical reduction, i.e. a change of the charging state of the plating catalyst.
  • the removing comprises patterning the inactive material.
  • a patterning may be accomplished by a spatially limited laser treatment, or by a lithography and etching treatment.
  • the removing comprises converting part of the inactive material into non-plateable material (for instance by carbonizing hydrophilic and/or hydrophobic material), and removing a remaining non-converted part of the inactive material (for instance by etching or laser treatment) without removing the converted non-plateable material.
  • This allows to expose part of the plating catalyst for subsequently converting this part of the plating catalyst from the deactivated state into the activated state.
  • a conversion may result in an increase of the electrical conductivity of the exposed part of the plating catalyst, for instance from a poorly electrically conductive state (like palladium in an Pd 2+ state) into a metallically conductive state (like palladium in an Pd 0 state).
  • the conversion reaction may hence be a chemical reduction, i.e. a change of the charging state of the plating catalyst.
  • the converting of at least part of the plating catalyst comprises electrically neutralizing previously electrically charged metallic material of the plating catalyst.
  • Such a chemical reaction may significantly increase electrical conductivity of the plating catalyst, thereby activating the plating catalyst and rendering it appropriate for depositing electrically conductive material thereon by plating.
  • the electronic chip is a power semiconductor chip.
  • electric reliability and heat removal capability are important issues which can be met with the described manufacturing procedure.
  • Possible integrated circuit elements which can be monolithically integrated in such a semiconductor power chip are field effect transistors (such as insulated gate bipolar transistors or metal oxide semiconductor field effect transistors) diodes, etc. With such constituents, it is possible to provide electronic components usable as packages for automotive applications, high-frequency applications, etc. Examples for electric circuits which can be constituted by such and other power semiconductor circuits and packages are half-bridges, full bridges, etc.
  • the package comprises one or more solder structures (such as solder balls) on an exterior surface.
  • solder structures such as solder balls
  • Such a solder structure may allow to mount the package or electronic component on an external periphery device such as a printed circuit board.
  • a semiconductor substrate preferably a silicon substrate
  • a silicon oxide or another insulator substrate may be provided.
  • a germanium substrate or a III-V-semiconductor material For instance, exemplary embodiments may be implemented in GaN or SiC technology.
  • FIG. 1 illustrates a cross-sectional view and a detail of a package according to an exemplary embodiment.
  • FIG. 2 illustrates a three-dimensional view of a package according to an exemplary embodiment.
  • FIG. 3 illustrates the general chemical structure of a chemical component of a premix compound for forming a plateable encapsulant according to an exemplary embodiment.
  • FIG. 4 illustrates cross-sectional views of structures obtained during carrying out a method of manufacturing a plateable encapsulant according to an exemplary embodiment.
  • FIG. 5 illustrates cross-sectional views of structures obtained during carrying out a method of manufacturing a plateable encapsulant according to another exemplary embodiment.
  • FIG. 6 illustrates cross-sectional views of structures obtained during carrying out a method of manufacturing a plateable encapsulant according to yet another exemplary embodiment.
  • FIG. 7 illustrates a package according to an exemplary embodiment.
  • FIG. 8 illustrates a package according to another exemplary embodiment.
  • FIG. 9 illustrates a package according to still another exemplary embodiment.
  • FIG. 10 illustrates a package according to yet another exemplary embodiment.
  • FIG. 11 illustrates a package according to another exemplary embodiment.
  • FIG. 12 schematically illustrates a process of plating a surface of a plateable encapsulant with electrically conductive material according to an exemplary embodiment.
  • FIG. 13 illustrates a flowchart of a method of manufacturing a package according to an exemplary embodiment.
  • FIG. 14 illustrates a flowchart of a method of manufacturing a package according to another exemplary embodiment.
  • FIG. 15 illustrates a plated plateable encapsulant and a non-plated non-plateable encapsulant according to an exemplary embodiment.
  • FIG. 16 illustrates a plated plateable encapsulant and a non-plated non-plateable encapsulant according to another exemplary embodiment.
  • FIG. 17 illustrates a package according to an exemplary embodiment.
  • FIG. 18 illustrates a package according to another exemplary embodiment.
  • FIG. 19 illustrates a package according to still another exemplary embodiment.
  • FIG. 20 illustrates a package with integrated antenna structure according to an exemplary embodiment.
  • FIG. 21 illustrates a package with integrated antenna structure according to another exemplary embodiment.
  • FIG. 22 illustrates a package with integrated antenna structure according to still another exemplary embodiment.
  • FIG. 23 illustrates a flowchart showing a method of manufacturing a package with integrated antenna structure according to an exemplary embodiment.
  • FIG. 24 illustrates a flowchart showing a method of manufacturing a package with integrated antenna structure according to another exemplary embodiment.
  • FIG. 25 to FIG. 32 shows structures obtained during carrying out a method of manufacturing a package according to an exemplary embodiment of the invention.
  • FIG. 33 to FIG. 36 show structures of packages according to embodiments of the invention.
  • a plateable encapsulant such as a plateable mold compound for semiconductor packages is provided.
  • thermoset epoxy mold compound is not catalytically selective. This may cause plating not only on a substrate, but for example also on a jig and a carrier. Moreover, current plating technology on thermoset epoxy mold compound requires chemically roughening using high corrosive chemicals, such as desmear chemistry and glass etch chemistry, which may limit the selection of an appropriate material for carrier and jig.
  • a plateable encapsulant may be advantageously used for rendering a semiconductor package more compact than possible with conventional approaches.
  • FIG. 1 illustrates a cross-sectional view and a detail 150 of a package 100 according to an exemplary embodiment.
  • the package 100 comprises a first mold compound as a first encapsulant 102 which is configured so that electrically conductive material 106 is plateable thereon. Moreover, the package 100 comprises a second mold compound as a second encapsulant 104 which is configured so that electrically conductive material 106 is not plateable thereon. Two semiconductor chips 108 are fully embedded in the first encapsulant 102 . A lateral sidewall of the first encapsulant 102 is plated with electrically conductive material 106 . Furthermore, the package 100 comprises a redistribution layer 110 on and in the second encapsulant 104 and being electrically coupled with the semiconductor chips 108 . Via exposed surface portions of the redistribution layer 110 , an electrically conductive coupling between the semiconductor chips 108 and an electronic periphery such as a printed circuit board (PCB, not shown) may be accomplished.
  • PCB printed circuit board
  • a surface portion 152 (which may be denoted as activated portion or compound) of the first encapsulant 102 is activated for enabling plating of the electrically conductive material 106 thereon, whereas an interior portion 154 (which may be denoted as non-active epoxy mold portion or compound) of the first encapsulant 102 is deactivated for disabling plating of the electrically conductive material 106 thereon.
  • the activated state corresponds to transition metal particles 156 being in an electrically conductive neutral charging state (palladium in the Pd 0 charging state in the shown embodiment, i.e. active palladium).
  • the deactivated state corresponds to the transition metal particles 156 being in an electrically insulating or poorly conductive charging state (palladium in the Pd 2+ charging state in the shown embodiment, i.e. non-active palladium).
  • the plated electrically conductive material 106 is a layer-type metallic coating which may be used for an electric ground connection.
  • a selectivity area of plating in terms of the z-axis can be controlled by defining positions of the plateable first encapsulant 102 and of the non-plateable second encapsulant 104 and by a backside tape (for instance a chemical resistance tape).
  • the metallic catalyst in form of the transition metal particles 156 which may provide the first encapsulant 102 with a plateable property, may comprise or consists of active metallic particles (such as Pd 0 ) and none-active metallic particles (such as Pd 2+ ) within the package 100 . Addition of a wax, adhesion promoter and/or catalyst is possible.
  • the none-active metallic particles may comprise or consist of organo-metallic particles such as organo-palladium, organo-copper or organo-nickel.
  • the total metallic amount of the first encapsulant 102 may be in a range from 0.05 weight % to 0.15 weight %. None-active organo-metallic particles may be ionized by a plasma such as Ar and/or H 2 plasma, for instance being operated for a time interval in a range between 5 minutes and 20 minutes, or more.
  • selective laser treatment in terms of activation
  • activation using for example a 1064 nm wavelength or a wavelength longer than 1064 nm with a pulse duration in the range of nanoseconds may be followed by an activation.
  • Such an activation may be accomplished by an ionization process using alkaline base solution for example by adding 50 g/l to 70 g/l of NaOH or KOH.
  • the manufacturing method may proceed with the supply of a reducing agent.
  • electroless plating may be carried out.
  • Electroless plating on dicing tape enables package side wall plating without affecting the geometry of plating and the package saw cost.
  • the described method is for instance applicable to an epoxy based mold compound using transfer molding.
  • FIG. 2 illustrates a three-dimensional view of a package 100 according to an exemplary embodiment, more specifically of the type described referring to FIG. 1 .
  • the package 100 according to FIG. 2 shows one semiconductor chip 108 encapsulated in a plateable first encapsulant 102 on top of a non-plateable second encapsulant 104 .
  • FIG. 3 illustrates a general chemical structure of a chemical component of a compound forming the basis of a premix 300 for manufacturing a plateable encapsulant 102 according to an exemplary embodiment.
  • the premix 300 may be used as a starting point for manufacturing the plateable encapsulant 102 .
  • the premix 300 comprises a transition metal A (which may be present in organometallic form or bound in a compound), a polymer cluster D, and a coupling agent B coupling the transition metal A with the polymer cluster D.
  • the transition metal A may comprise or consist of palladium, nickel and/or copper.
  • the coupling agent B may comprise an N (nitrogen) from an amino group or an azole group, or a C (carbon) from a carbonyl group, or a P (phosphor) from an organophosphine group.
  • the premix 300 moreover comprises a complexing agent which is here embodied in the form of three rests R1, R1′, R1′′ coupled to the transition metal A.
  • the complexing agent may comprise only one, only two or at least four rests.
  • the complexing agent may be configured to enhance a chemical stearic effect.
  • the polymer cluster D comprises in the shown embodiment a polymeric core C with two rests R2, R3.
  • the polymer cluster D may comprise no rest, only one rest or at least three rests.
  • one of the rests R2 may be a hydrophobic group, and the other rest R3 may be a hydrophilic group.
  • the polymer cluster D may comprise a wax, an adhesion promoter, a mold compound catalyst and/or a coupling agent for silica.
  • a mold compound type encapsulant 102 which may be manufactured based on the premix 300 and which may be used for encapsulating semiconductor chip 108 may hence comprise an electrically insulating encapsulant base material in form of part C of the polymer cluster D, and an activatable plating catalyst in form of the transition metal A being convertible from a deactivated state, in which the encapsulant 102 is non-plateable with electrically conductive material 106 , into an activated state, in which the encapsulant 102 is plateable with electrically conductive material 106 .
  • the plating catalyst in form of the transition metal A comprises a metallic material being electrically insulating or poorly conductive in the deactivated state and being electrically conductive in the activated state.
  • An inactive material in form of at least part of the rests R1, R1′, R1′′, R2, R3 may cover the plating catalyst A in the deactivated state and may be removable for exposing the plating catalyst in form of the transition metal A for activation. For example, this removing can be accomplished by a laser treatment and/or a plasma treatment.
  • the premix 300 of the plateable encapsulant 102 shown in FIG. 3 allows for semiconductor packaging with enable platability on a package body. This is achievable by a manufacturing method that enables to selectively activate an auto-catalytic procedure for electroless plating.
  • thermoset mold material formulation comprising or consisting of a transition metal-polymer matrix to mold semiconductor package 100 .
  • the transition metal-polymer matrix may be composed of:
  • A Transition metal, preferably Pd, Ni, and/or Cu, wherein the concentration of the transition metal may be in the range from 25 ppm to 2000 ppm
  • transition metal A from wax component, mold compound catalyst, silica coupling agent
  • N from amino group or azole group
  • C from carbonyl group
  • P from organophosphine group.
  • D Polymer cluster (such as wax, adhesion promoter, mold compound catalyst, and/or coupling agent for silica)
  • R1, R1′, R1′′ Complexing agent preferably comprising or consisting of an aromatic ring to enhance a chemical stearic effect to maintain electrical insulative behavior of transition metal A in bulk mold compound.
  • R2 may be a hydrophobic group, hydrocarbon, either aliphatic or aromatic
  • R3 may be a hydrophilic group, carbonyl functional group, epoxy group or hydrophobic group hydrocarbon, either aliphatic or aromatic.
  • a transition metal complex may be provided in wax (through carbonyl ester).
  • a transition metal complex may be provided in a filler (for instance through amino base silane chemical).
  • a transition metal complex may be provided in a catalyst (for instance through amino base chemical or azole base or phosphine).
  • FIG. 4 illustrates cross-sectional views of structures obtained during carrying out a method of manufacturing a plateable encapsulant 102 according to an exemplary embodiment using a premix 300 .
  • a basis for the described method of manufacturing a plateable encapsulant 102 is the provision of a transition metal-polymer compound or premix 300 comprising transition metal A (in the shown embodiment palladium in a “2+” charging state) and a polymer cluster D composed of polymer core C and rests R2, R3. Also the above-described coupling agent (in the described embodiment only one rest R1) is provided.
  • a surface portion of both the hydrophilic structure 404 and the hydrophobic structure 406 i.e. a portion of the rests R2, R3 of the polymer cluster D as well as a portion of the rest R1 is removed to thereby pattern the hydrophilic structure 404 and the hydrophobic structure 406 . Consequently, a portion of the transition metal A is exposed for subsequent activation and plating.
  • a portion of the hydrophobic structure 406 is removed by laser processing to thereby obtain intermediate structure 420 .
  • an exposed portion of the hydrophilic structure 404 is removed by treatment with an alkaline base such as NaOH or KOH to obtain structure 440 .
  • part of the inactive material R1, R2, R3 is removed to thereby expose part of the plating catalyst in form of the still deactivated transition metal A for subsequently converting part of the transition metal A from the deactivated state (palladium in the “2+” charging state) into the activated state (palladium in the “0” charging state).
  • the exposed surface of the transition metal A (palladium in the “2+” charging state) of the structure 440 can then be activated in terms of platability by a chemical reduction (thereby converting the palladium from the “2+” charging state into the electrically neutralized “0” charging state).
  • the palladium becomes properly electrically conductive and thereby becomes able to serve as a base for plating electrically conductive material 106 thereon, see structure 460 . Consequently, the converting of part of the transition metal A for activation comprises electrically neutralizing previously electrically charged material of the transition metal A.
  • the electrically conductive material 106 (for instance nickel) is formed by electroless plating on the exposed and activated surface of the transition metal A.
  • structure 400 By laser processing (preferably using a wavelength in a range from 1060 nm to 2700 nm) of structure 400 , a portion of the hydrophilic structure 404 or hydrophilic component at the transition metal-polymer matrix is exposed, thereby obtaining structure 420 .
  • This is followed by an ionization using an alkaline base (for example NaOH or KOH) with a concentration of 30 g/l to 70 g/l to activate the transition metal-polymer matrix in the mold compound to enable the plating process.
  • an alkaline base for example NaOH or KOH
  • FIG. 5 illustrates cross-sectional views of structures obtained during carrying out a method of manufacturing a plateable encapsulant 102 according to another exemplary embodiment.
  • the method according to FIG. 5 uses an Ar containing plasma (for a batch procedure) or an Ar containing laser (when a selective area of the transition metal A shall be exposed).
  • an Ar containing plasma for a batch procedure
  • an Ar containing laser when a selective area of the transition metal A shall be exposed.
  • one or more other noble elements/gases may be used.
  • an argon gas laser treatment may be carried out.
  • a reduction and an electroless nickel deposition may be carried out.
  • FIG. 6 illustrates cross-sectional views of structures obtained during carrying out a method of manufacturing a plateable encapsulant 102 according to yet another exemplary embodiment.
  • an inverse part of the inactive material in form of the rests R1, R2, R3 may be converted into non-plateable material by carbonization. Consequently, structure 600 with a carbonized structure as non-plateable material 602 is obtained.
  • structure 620 according to FIG. 6 a remaining non-converted part of the inactive material in form of the rests R1, R2, R3 is removed to thereby completely remove the hydrophilic structure 404 and the hydrophobic structure 406 .
  • structure 620 is obtained in which part of the transition metal A is exposed, whereas another part of the transition metal A remains covered with the converted non-plateable material 602 . Subsequently, the exposed part of the transition metal A may be converted from the deactivated (in terms of platability) 2+ charging state into the activated (in terms of platability) electrically neutral charging state.
  • the method described referring to FIG. 6 relates to a deactivation process rather than to an activation process.
  • a chemical treatment can be carried out (for example with a weak base (such as monoethanolamine, preferably with a concentration of 3 volume % to 15% volume %)) to remove both remaining parts of the hydrophobic structure 406 and the hydrophilic structure 404 at the plating area on the package body, see transition from structure 600 to structure 620 according to FIG. 6 .
  • Reduction of the transition metal A from Pa 2+ to Pa 0 then enables a subsequent plating process, see transition from structure 620 to structure 640 in FIG. 6 .
  • the plateable mold compound manufactured according to FIG. 4 to FIG. 6 can be used in combination with a non-plateable mold compound to create selectivity in plating in z-axis direction (i.e. in a vertical direction) and selectivity in x- and y-directions (i.e. in a horizontal plane) through laser activation or laser deactivation of transition metal A.
  • the packages 100 shown in FIG. 7 to FIG. 11 can be obtained with such a combination of a plateable encapsulant 102 with a non-plateable encapsulant 104 :
  • FIG. 7 illustrates a leadless package 100 according to an exemplary embodiment for RF front end module applications.
  • the package 100 according to FIG. 7 which corresponds to package 100 according to FIG. 1 , provides a solution for EMI (electromagnetic interference) shielding and/or ESD (electrostatic discharge) protection purpose due to the lining of an exterior surface of part of the package 100 with plated electrically conductive material 106 .
  • EMI electromagnetic interference
  • ESD electrostatic discharge
  • FIG. 8 illustrates a package 100 according to another exemplary embodiment which is a miniaturized power package with high heat dissipation performance.
  • the package 100 according to FIG. 8 has a heat sink 802 which is here embodied as a copper plate and which is thermally coupled to a copper interconnect in form of vias 800 on and in an epoxy mold compound surface.
  • heat generated by the semiconductor chip 108 during operation can be spread and supplied to an environment of the package 100 .
  • the plated electrically conductive material 106 also contributes to the efficient heat removal from the semiconductor chip 108 towards the environment of the package 100 .
  • FIG. 9 illustrates a package 100 according to yet another exemplary embodiment.
  • FIG. 9 relates to a system-in-package (SIP) architecture with a copper interconnect on an epoxy mold compound surface.
  • SIP system-in-package
  • Package 100 according to FIG. 9 is a package-on-package arrangement, since a passive component 900 is mounted on the packaged semiconductor chip 108 .
  • FIG. 10 illustrates an SIP package 100 according to still another exemplary embodiment.
  • Package 100 according to FIG. 10 is an embodiment in accordance with wafer level packaging (WLP) technology.
  • WLP wafer level packaging
  • plating by the electrically conductive material 106 is performed on the top surface of the mold compound.
  • FIG. 11 illustrates an SIP package 100 according to another exemplary embodiment.
  • one semiconductor chip 108 is encapsulated in plateable encapsulant 102 .
  • a further semiconductor chip 108 is mounted on the plateable encapsulant 102 , is electrically connected to the previously mentioned semiconductor chip 108 via bond wires 1100 , and is subsequently encapsulated by a further encapsulant 1102 .
  • FIG. 11 corresponds to a chip embedded architecture with a copper interconnect on an epoxy mold surface.
  • FIG. 12 schematically illustrates a process of plating a surface of a plateable encapsulant 102 with electrically conductive material 106 according to an exemplary embodiment.
  • Reference numeral 1200 corresponds to an active compound
  • reference numeral 1202 corresponds to a transition metal such as palladium which can be treated (see reference numeral 1204 ) by a reduction agent 1206 , which will be oxidized, and which can be treated (see reference numeral 1208 ) by a nickel ion 1210 such as Ni 2+ , which will be reduced.
  • a process flow may be as follows:
  • An argon plasma or laser treatment may be used to remove a hydrophobic component of an organometallic which is attach to a wax, an adhesion promoter, a catalyst and coupling agent, etc.
  • Ionization of the organometallic can be carried out, for example by an Argon plasma or by NaOH.
  • Activation of the epoxy's compound organometallic may be carried out by reduction of ion novel metal by a reduction agent.
  • An active surface may act as catalyst surface.
  • a corresponding chemical reaction can be: Pd 2+ +Red ⁇ Pd+O
  • the active surface will become electrically conductive for electroless plating via catalyst by palladium, and it will go through a redox process in metal aqueous solution.
  • a chemical reaction regarding an oxidation of the reducing agent may be as follows: Red-O x+ne
  • FIG. 13 illustrates a flowchart 1300 of a method of manufacturing a package 100 according to an exemplary embodiment. Full plating for EMI protection can be carried out.
  • a block 1302 post mold curing is performed.
  • laser roughening on the top side and laser marking is carried out.
  • the package is sawn with a chemical resistance ultraviolet tape/selective ultraviolet treatment. Copper roughening is carried out in a subsequent block 1308 .
  • a plasma is applied (such as an argon and/or hydrogen plasma), see block 1310 .
  • ultrasonic cleaning in water is carried out.
  • a palladium activator for the copper surface is provided.
  • a reducing agent is added.
  • nickel is deposited in an electroless procedure, see block 1318 .
  • post processing can be carried out (see block 1320 ).
  • FIG. 14 illustrates a flowchart 1400 of a method of manufacturing a package 100 according to another exemplary embodiment. Selective plating can be carried out according to FIG. 14 .
  • block 1304 is substituted by a block 1402 in which laser patterning is carried out. While block 1310 is omitted according to FIG. 14 , an additional block 1404 is interposed between block 1314 and block 1316 . In block 1404 , NaOH activation is carried out.
  • FIG. 15 illustrates a plated plateable encapsulant 102 and a non-plated non-plateable encapsulant 104 according to an exemplary embodiment. Selective plating is accomplished by laser patterning according to FIG. 15 (in a similar way as shown in FIG. 4 and FIG. 5 ). This means that a so-called laser area 1500 irradiated with a laser is selectively activated and plated with electroless nickel as electrically conductive material 106 . A non-laser area 1502 is not plated.
  • FIG. 16 illustrates a plated plateable encapsulant 102 and a non-plated non-plateable encapsulant 104 according to an exemplary embodiment.
  • laser area 1500 is disabled with regard to plating by carbonization of laser area 1500 (in a similar way as shown in FIG. 6 ).
  • non-laser area 1502 is able to be covered with electrically conductive material 106 by electroless nickel plating, for instance by immersing the package body into an electroless nickel bath.
  • FIG. 17 illustrates a cross-sectional view and a top view of a package 100 according to an exemplary embodiment.
  • the package 100 provides the function of a gesture sensor.
  • a semiconductor chip 108 with a corresponding functionality is encapsulated in a plateable encapsulant 102 .
  • Both semiconductor chip 108 as well as plateable encapsulant 102 are arranged on a chip carrier 1700 such as a leadframe substrate. Redistribution layers 110 are provided both on bottom and on top of the semiconductor chip 108 .
  • FIG. 18 illustrates a package 100 according to another exemplary embodiment with a top package surface plating in form of the electrically conductive material 106 .
  • FIG. 18 provides a solution to the transfer of electrical charge within the package 100 .
  • the plated electrically conductive material 106 contributes to reduce ESD (electrostatic discharge) issues.
  • FIG. 19 illustrates a package 100 according to an exemplary embodiment.
  • the embodiment of FIG. 19 provides an EMI (electromagnetic interference) shielding for a leaded package 100 , wherein the EMI protection is provided by the selectively plated electrically conductive material 106 .
  • the semiconductor chip 108 is mechanically mounted on a chip carrier 1700 (such as a leadframe) and is electrically connected to the chip carrier 1700 by a bond wire 1100 .
  • FIG. 20 illustrates a package 100 with integrated antenna structure 2000 according to an exemplary embodiment.
  • the package 100 is shown in FIG. 20 in a cross-sectional view 2050 , in a plan view 2060 , and—with a similar architecture—in a three-dimensional view 2070 and in a transparent three-dimensional view 2080 .
  • the package 100 is configured as a gesture sensor package 100 . When a gesture is made, this characteristically influences an electric signal detected by the antenna structure 2000 . More specifically, the antenna structure 2000 may be configured for receiving a radar signal. Hence, the event of a gesture can be detected by a semiconductor chip 108 which is electrically connected to the antenna structure 2000 via a sidewall plating in form of the electrically conductive material 106 .
  • the antenna structure 2000 is formed as a patterned electrically conductive layer on an upper main surface of the package 100 .
  • the antenna structure 2000 is arranged or integrated on a plateable first encapsulant 102 (for instance as described referring to FIG. 1 to FIG. 6 ) arranged above a substrate 2004 which, in turn, comprises a redistribution layer 110 embedded in a non-plateable second encapsulant 104 such as an ordinary mold compound (for instance being free of metallic particles).
  • the substrate 2004 comprises the redistribution layer 110 , part of the non-plateable encapsulant 104 , and a solder pad 2002 adjacent a solder mask 2006 .
  • the antenna structure 2000 is located at an upper main surface of the package 100 .
  • a lateral sidewall of the first encapsulant 102 is plated with electrically conductive material 106 for electrically connecting the semiconductor chip 108 with the antenna structure 2000 .
  • a lateral sidewall of the non-plateable second encapsulant 104 which may include four isolation bars in four corners of the package 100 (see the three-dimensional views 2070 , 2080 ), is free of electrically conductive material 106 , since its surface is not plateable and is thus not covered with plated electrically conductive material 106 although being exposed during a plating procedure.
  • Solder structure 2002 which is here embodied as a solder pad, is arranged on the second encapsulant 104 .
  • Solder masks 2006 are formed on an upper main surface of the first encapsulant 102 and on a lower main surface of the second encapsulant 104 .
  • the substrate 2004 is a molded interconnect substrate with redistribution layer 110 , solder structure 2002 connected to die pads 2010 via the redistribution layer 110 , and the mold compound being of the none plateable type.
  • the semiconductor chip 108 is configured as a functional chip with attached die pad 2010 and is molded within the plateable first encapsulant 102 as plateable mold compound.
  • Package 100 may be thinned down to expose the isolation bar(s). To obtain package 100 , solder mask printing and curing may be carried out, as well as package singularization to expose the package sidewalls, followed by electroless plating.
  • FIG. 21 illustrates a package 100 , also configured as a gesture sensor, with package-integrated antenna structure 2000 according to another exemplary embodiment.
  • the plated electrically conductive material 106 on sidewall portions of the plateable first encapsulant 102 are arranged for electrically connecting the semiconductor chip 108 with solder structures 2002 arranged on the top surface of the package 100 .
  • the sidewall plating is used for an interconnection from the semiconductor chip 108 to the solder structure 2002 , configured as solder pad for providing a connection to a mounting base such as a printed circuit board (PCB, not shown).
  • the antenna structure 2000 is provided as a patterned electrically conductive layer on a lower main surface of the non-plateable second encapsulant 104 , and hence on a bottom surface of the package 100 .
  • the antenna structure 2000 is provided as a portion of the substrate 2004 according to FIG. 21 .
  • a dielectric layer 2100 separates and vertically spaces portions of the non-plateable second encapsulant 104 .
  • the plateable first encapsulant 102 may comprise a dielectric material with a high dielectric constant.
  • the substrate 2004 may be a premold including top stud, redistribution layer 110 , and antenna structure 2000 with low dielectric constant.
  • portions of the non-plateable second encapsulant 104 may protrude vertically up to the upper main surface of the package 100 , to thereby separate the individual solder structures 2002 formed on the plateable first encapsulant 102 by selective plating.
  • the substrate 2004 comprises molded interconnect, redistribution layer 110 , patterned antenna structure 2000 , dielectric layer 2100 , die pad 2010 , and non-plateable mold compound in form of the second encapsulant 104 .
  • Sections of the non-plateable second encapsulant 104 of the substrate 2004 protrude as isolation bars for providing selectivity of side wall plating for the formation of the solder pads as solder structure 2002 .
  • the semiconductor chip 108 is attached to die pad 2010 and encapsulated (here molded) with plateable mold compound in form of the first encapsulant 102 .
  • the package 100 may be thinned down to expose the isolation bar(s). It is furthermore possible to carry out solder mask printing and curing, package singulation to expose the package sidewall, followed by electroless plating.
  • FIG. 22 illustrates a package 100 with an antenna structure 2000 formed as a patterned layer in a surface portion of a non-plateable second encapsulant 104 according to an exemplary embodiment.
  • the electrically conductive material 106 plated on exposed surface portions of the plateable first encapsulant 102 is configured for providing an electromagnetic interference (EMI) shielding of the package 100 .
  • the package 100 according to FIG. 22 furthermore comprises vertical through connections 2200 (configured as vias i.e. through holes filled with electrically conductive material such as copper) extending vertically through the first encapsulant 102 for interconnecting solder structures 2002 via die pads 2010 to the semiconductor chip 108 .
  • the embodiment of FIG. 22 comprises a substrate 2004 comprising molded interconnect, redistribution layer 110 , antenna pattern, dielectric layer 2100 , die pad 2010 , and a mold compound being non-plateable.
  • the substrate 2004 has portions of the non-plateable mold compound in form of the second encapsulant 104 protruding beyond a base portion of the second encapsulant 104 and extending into the plateable first encapsulant 102 to form isolation bars for defining a negative pattern for solder structures 2002 and for defining side wall plating.
  • the semiconductor chip 108 is attached to die pad 2010 and is encapsulated (more specifically molded) with plateable mold compound, i.e. with the plateable first encapsulant 102 .
  • laser drilling, solder mask printing and curing, plating on vias, and package singulation to expose the package sidewall are carried out, followed by electroless plating.
  • FIG. 23 illustrates a flowchart 2300 showing a method of manufacturing a package 100 with integrated antenna structure 2000 according to an exemplary embodiment.
  • substrate 2004 can be manufactured with non-plateable mold compound protrusion (i.e. with the isolation bar(s)).
  • semiconductor chip 108 can then be attached to the substrate 2004 .
  • the obtained structure may be molded with the plateable first encapsulant 102 .
  • laser marking can then be carried out.
  • the obtained structure may be processed by backgrinding.
  • a solder mask 2006 may then be printed and cured.
  • the packages may then be sawn with mold compound facing up and with a chemical resistance tape.
  • an adhesion promoter may be applied by spraying and may be cured.
  • metal on the surface may be roughened.
  • a plasma treatment may be carried out, for example by argon and/or hydrogen.
  • a metal such as copper may be applied in an electroless plating procedure.
  • a surface finish may be applied, for example ENIG (electroless nickel immersion gold). The resulting structure may be tested, see block 2326 .
  • FIG. 24 illustrates a flowchart 2400 showing a method of manufacturing a package 100 with package-integrated antenna structure 2000 according to another exemplary embodiment.
  • block 2306 is substituted by separate blocks 2402 and 2404 according to flowchart 2400 .
  • an isolation mold attach procedure is carried out, followed by overmolding by a plateable mold compound (see block 2404 ).
  • FIG. 25 to FIG. 32 shows structures obtained during carrying out a method of manufacturing a package 100 according to an exemplary embodiment of the invention.
  • substrate 2004 is provided on the basis of a leadframe.
  • a connection trace 2500 on a side wall is shown in a detail of FIG. 25 .
  • semiconductor chips 108 are mounted in a flip chip architecture.
  • isolation mold is attached.
  • multiple isolation bars of non-plateable second encapsulant 104 are connected with the substrate 2004 .
  • a dummy mold array may be formed and cut in small pieces which can be attached to the corresponding positions of the leadframe type substrate 2004 .
  • FIG. 28 (which corresponds to block 2404 in FIG. 24 ), the structure according to FIG. 27 is overmolded with plateable mold compound, i.e. with the plateable first encapsulant 102 .
  • FIG. 29 (which corresponds to block 2314 in FIG. 24 ), the structure according to FIG. 28 is sawn along separation lines 2900 for singularising individual packages 100 .
  • FIG. 30 (which corresponds to blocks 2316 , 2318 , 2320 in FIG. 24 ), a seeding procedure is carried out on the plateable first encapsulant 102 .
  • An adhesion promoter is applied and cured, metal is roughened, and the surface is activated by a plasma (such as an argon and/or hydrogen plasma).
  • Activated sections of the first encapsulant 102 are indicated with reference numeral 3000 .
  • the electrically conductive material 106 is applied to activated sections 3000 by electroless plating. Subsequently, an ENIG surface finish is applied.
  • FIG. 32 shows a top view 3200 and a bottom view 3250 of the manufactured package 100 .
  • FIG. 33 to FIG. 36 show structures of packages 100 according to embodiments of the invention.
  • the illustrated embodiment relates to a patch antenna design (although other antenna designs are possible according to other exemplary embodiments of the invention).
  • FIG. 33 shows a plateable first encapsulant 102 and a non-plateable second encapsulant 104 as well as a detail 3300 with an exposed trace 3302 for antenna connection.
  • the structure shown in FIG. 33 relates to a condition before plating.
  • FIG. 34 shows an enlarged view of detail 3300 .
  • FIG. 35 shows the plateable first encapsulant 102 and the non-plateable second encapsulant 104 as well as a detail 3500 with the exposed trace 3302 for antenna connection after plating, i.e. of the applying electrically conductive material 106 .
  • FIG. 36 shows an enlarged view of detail 3500 .

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US20190341324A1 (en) 2019-11-07
CN111276404A (zh) 2020-06-12
DE102016103790B8 (de) 2021-06-02
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CN111276404B (zh) 2023-12-05
US20170256472A1 (en) 2017-09-07

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