UA86105U - Плазменно-дуговое УСТРОЙСТВО ФОРМИРОВАНИЯ ПОКРЫТИЙ - Google Patents
Плазменно-дуговое УСТРОЙСТВО ФОРМИРОВАНИЯ ПОКРЫТИЙ Download PDFInfo
- Publication number
- UA86105U UA86105U UAU201308682U UAU201308682U UA86105U UA 86105 U UA86105 U UA 86105U UA U201308682 U UAU201308682 U UA U201308682U UA U201308682 U UAU201308682 U UA U201308682U UA 86105 U UA86105 U UA 86105U
- Authority
- UA
- Ukraine
- Prior art keywords
- cathode
- anode
- plasma
- solenoidal
- electrode
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 30
- 239000011248 coating agent Substances 0.000 title abstract description 11
- 230000005291 magnetic effect Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 3
- 238000000926 separation method Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000010406 cathode material Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000007935 neutral effect Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 238000010891 electric arc Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000009916 joint effect Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002717 carbon nanostructure Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005555 metalworking Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008207 working material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
Плазменно-дуговое устройство формирования покрытий содержит вакуумную камеру, в которой осесимметрично последовательно расположены осесимметричный катод из электропроводящего материала, анод, охватывающий катод, экранирующий электрод, который расположен между катодом и анодом, магнитная система, состоящая из двух последовательно расположенных соленоидальных элементов, держатель подложки и источника питания. Магнитная система дополнена третьим соленоидальным элементом, который установлен плоской поверхностью за вторым соленоидальным элементом. Между держателем подложки и торцевой рабочей поверхностью катода установлен кольцевой сепарирующий электрод. При этом между диаметрами анодасепарирующего электродаи катодавыполняется соотношение:.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UAU201308682U UA86105U (ru) | 2013-07-09 | 2013-07-09 | Плазменно-дуговое УСТРОЙСТВО ФОРМИРОВАНИЯ ПОКРЫТИЙ |
PCT/UA2014/000011 WO2015005888A1 (ru) | 2013-07-09 | 2014-01-27 | Плазменно-дуговое устройство формирования покрытий |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UAU201308682U UA86105U (ru) | 2013-07-09 | 2013-07-09 | Плазменно-дуговое УСТРОЙСТВО ФОРМИРОВАНИЯ ПОКРЫТИЙ |
Publications (1)
Publication Number | Publication Date |
---|---|
UA86105U true UA86105U (ru) | 2013-12-10 |
Family
ID=52280395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
UAU201308682U UA86105U (ru) | 2013-07-09 | 2013-07-09 | Плазменно-дуговое УСТРОЙСТВО ФОРМИРОВАНИЯ ПОКРЫТИЙ |
Country Status (2)
Country | Link |
---|---|
UA (1) | UA86105U (ru) |
WO (1) | WO2015005888A1 (ru) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2642237C2 (ru) * | 2015-11-26 | 2018-01-24 | Открытое акционерное общество "Научно-исследовательский институт точного машиностроения" | Плазменно-дуговое устройство формирования покрытий |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
UA10775A (ru) * | 1996-04-19 | 1996-12-25 | Валерій Федорович Семенюк | СПОСОБ ВАКУУМнО-ДУГОВОГО НАНЕСЕННЯ ПОКРЫТИЙ И УСТРОЙСТВО ДЛЯ ЕГО осуществления |
AU9410498A (en) * | 1997-11-26 | 1999-06-17 | Vapor Technologies, Inc. | Apparatus for sputtering or arc evaporation |
RU2287611C2 (ru) * | 2005-02-24 | 2006-11-20 | Государственное образовательное учреждение высшего профессионального образования Самарский государственный аэрокосмический университет им. акад. С.П. Королева | Электродуговой генератор сепарированных потоков плазмы металлов в вакууме |
-
2013
- 2013-07-09 UA UAU201308682U patent/UA86105U/ru unknown
-
2014
- 2014-01-27 WO PCT/UA2014/000011 patent/WO2015005888A1/ru active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2642237C2 (ru) * | 2015-11-26 | 2018-01-24 | Открытое акционерное общество "Научно-исследовательский институт точного машиностроения" | Плазменно-дуговое устройство формирования покрытий |
Also Published As
Publication number | Publication date |
---|---|
WO2015005888A1 (ru) | 2015-01-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Karpov | Cathodic arc sources and macroparticle filtering | |
CN102947478B (zh) | 有明确电场的电弧蒸发源 | |
EP1683178A2 (en) | Filtered cathodic arc plasma source | |
US20120199070A1 (en) | Filter for arc source | |
EP3644343B1 (en) | A coating system for high volume pe-cvd processing | |
KR20130061030A (ko) | 다수의 타깃과 자석을 갖는 증착 챔버가 구비된 pvd 장치 및 방법 | |
US6756596B2 (en) | Filtered ion source | |
CA3103016C (en) | Single beam plasma source | |
UA86105U (ru) | Плазменно-дуговое УСТРОЙСТВО ФОРМИРОВАНИЯ ПОКРЫТИЙ | |
EP3644342B1 (en) | A coating system | |
US20220013324A1 (en) | Single beam plasma source | |
JP2004076160A (ja) | シールド装置 | |
KR20140128140A (ko) | 이온 소스 및 이를 갖는 이온빔 처리 장치 | |
JP2009179835A (ja) | 同軸型真空アーク蒸着源及び真空蒸着装置 | |
RU2465749C2 (ru) | Способ электромагнитной фокусировки ионного пучка в ускорителе плазмы с азимутальным дрейфом электронов | |
RU2001972C1 (ru) | Установка дл нанесени упрочн ющих покрытий методом электродугового испарени | |
RU2575018C1 (ru) | Магнетронная распылительная система с протяженным катодом | |
RU2075539C1 (ru) | Устройство для ионно-плазменного распыления материалов в вакууме | |
WO2014005617A1 (en) | Apparatus for coating a layer of sputtered material on a substrate and deposition system | |
Kozlov et al. | Vacuum technological equipment for microphotoelectronic production | |
IL194400A (en) | An integrated universal source of the filtered plasma stream and neutral atoms | |
BRPI1000279A2 (pt) | equipamento e processo para deposição de filme metálico em substrato |