UA81965C2 - Integral thin-film module - Google Patents

Integral thin-film module Download PDF

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Publication number
UA81965C2
UA81965C2 UAA200601532A UAA200601532A UA81965C2 UA 81965 C2 UA81965 C2 UA 81965C2 UA A200601532 A UAA200601532 A UA A200601532A UA A200601532 A UAA200601532 A UA A200601532A UA 81965 C2 UA81965 C2 UA 81965C2
Authority
UA
Ukraine
Prior art keywords
film
amorphous
silicon
nanocrystalline
laser
Prior art date
Application number
UAA200601532A
Other languages
English (en)
Ukrainian (uk)
Inventor
Александра Николаевна Шмирева
Александр Дмитриевич Скуртул
Анатолий Петрович Алпатов
Тимофей Викторович Пастушкин
Елена Мойсеевна Шембель
Original Assignee
Александра Николаевна Шмирева
Александр Дмитриевич Скуртул
Анатолий Петрович Алпатов
Тимофей Викторович Пастушкин
Елена Мойсеевна Шембель
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Александра Николаевна Шмирева, Александр Дмитриевич Скуртул, Анатолий Петрович Алпатов, Тимофей Викторович Пастушкин, Елена Мойсеевна Шембель filed Critical Александра Николаевна Шмирева
Priority to UAA200601532A priority Critical patent/UA81965C2/uk
Priority to PCT/UA2006/000028 priority patent/WO2007094747A1/ru
Publication of UA81965C2 publication Critical patent/UA81965C2/uk
Priority to US12/228,485 priority patent/US20080308144A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Интегральный тонкопленочный фотомодуль относится к области приборостроения. Интегральный тонкопленочный фотомодуль содержит прокладку с нанесенным слоем аморфного кремния i-типа проводимости, области, которые чередуются между собой, имея разный тип проводимости, разную величину легирования и ширину запрещенной зоны, просветленное покрытие на лицевой поверхности, омические контакты. При этом области, которые чередуются между собой, создают в первичной пленке аморфного кремния в виде встречных гребенок в горизонтальном направлении, а гетероструктурные области изготавливают с изменяемым соотношением кристаллической, микрокристаллической, нанокристаллической и аморфной фаз. Изобретение обеспечивает уменьшение количества технологическ�
UAA200601532A 2006-02-14 2006-02-14 Integral thin-film module UA81965C2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
UAA200601532A UA81965C2 (en) 2006-02-14 2006-02-14 Integral thin-film module
PCT/UA2006/000028 WO2007094747A1 (fr) 2006-02-14 2006-05-22 Module photographique intégré à film mince à passages verticaux électrons-trous
US12/228,485 US20080308144A1 (en) 2006-02-14 2008-08-13 Integrated thin-layer photovoltaic module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAA200601532A UA81965C2 (en) 2006-02-14 2006-02-14 Integral thin-film module

Publications (1)

Publication Number Publication Date
UA81965C2 true UA81965C2 (en) 2008-02-25

Family

ID=38371828

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA200601532A UA81965C2 (en) 2006-02-14 2006-02-14 Integral thin-film module

Country Status (3)

Country Link
US (1) US20080308144A1 (ru)
UA (1) UA81965C2 (ru)
WO (1) WO2007094747A1 (ru)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090065124A (ko) * 2007-12-17 2009-06-22 한국전자통신연구원 실리콘 나노선을 이용한 바이오 센서 및 그 제조 방법
EP2438632A4 (en) * 2009-06-03 2014-01-22 First Solar Inc PHOTOVOLTAIC MODULE WITH AUTOMATIC RESTORATION
US8431815B2 (en) * 2009-12-22 2013-04-30 Los Alamos National Security, Llc Photovoltaic device comprising compositionally graded intrinsic photoactive layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1825246A1 (ru) * 1988-12-26 1995-04-10 Институт энергетических проблем химической физики АН СССР Приемник электромагнитного излучения
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
US6506321B1 (en) * 1997-10-24 2003-01-14 Sumitomo Special Metals Co., Ltd. Silicon based conductive material and process for production thereof
JP3046965B1 (ja) * 1999-02-26 2000-05-29 鐘淵化学工業株式会社 非晶質シリコン系薄膜光電変換装置の製造方法
JP2001177133A (ja) * 1999-12-20 2001-06-29 Kanegafuchi Chem Ind Co Ltd ハイブリッド型薄膜光電変換装置の製造方法
UA67068A (en) * 2003-06-25 2004-06-15 Nat Tech Univ Kyiv Polytech Method for producing a thin-film photoelectric converter with several vertical electron-hole junctions
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells

Also Published As

Publication number Publication date
US20080308144A1 (en) 2008-12-18
WO2007094747A1 (fr) 2007-08-23

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