Інженерний Центр "Алмаз" При Одеському Державному Університеті Ім. І.І. Мечнікова
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Priority to UA4746093ApriorityCriticalpatent/UA7798A1/en
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The manufacturing method includes forming conductor elements by means of a selective treatment with laser emission of the workpiece surface made of aluminum nitride. While forming conductor elements it is used a laser with emission wavelength = 1,06 μm and duration emission 2•10-6s and selective treatment of workpiece is made in two steps: at first with emission power density Q = 5•106-7•107W/cm2 and then with emission power density Q = 3•107- 6•107 W/cm2.
UA4746093A1989-10-031989-10-03Manufactirung method for microelectronic circuit
UA7798A1
(en)
METHOD FOR MANUFACTURING HOLLOW BLANKS BY REFUSION IN ELECTRICALLY CONDUCTIVE DAIRY, DEVICE FOR IMPLEMENTING SAME AND HOLLOW BLANKS OBTAINED BY SAID METHOD