UA49103C2 - Method for a part of silicon monocrystal grown with prescribed concentration of carbon dope separation - Google Patents
Method for a part of silicon monocrystal grown with prescribed concentration of carbon dope separationInfo
- Publication number
- UA49103C2 UA49103C2 UA2000084947A UA2000084947A UA49103C2 UA 49103 C2 UA49103 C2 UA 49103C2 UA 2000084947 A UA2000084947 A UA 2000084947A UA 2000084947 A UA2000084947 A UA 2000084947A UA 49103 C2 UA49103 C2 UA 49103C2
- Authority
- UA
- Ukraine
- Prior art keywords
- ingot
- separation
- concentration
- carbon
- silicon
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 12
- 229910052799 carbon Inorganic materials 0.000 title abstract 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 8
- 238000000926 separation method Methods 0.000 title abstract 8
- 229910052710 silicon Inorganic materials 0.000 title abstract 8
- 239000010703 silicon Substances 0.000 title abstract 8
- 238000000034 method Methods 0.000 title abstract 6
- 230000007423 decrease Effects 0.000 abstract 3
- 239000000654 additive Substances 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 abstract 1
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
This invention is pertinent to silicon monocrystals growing, in particular, to separation of parts of monocrystal ingots with prescribed concentration of carbon additive. This invention is based on the problem of developing a method for separation of a part of a silicon monocrystal ingot grown, with prescribed concentration of carbon dope, where by means of adding new operations more precise determination of the part of the ingot that is to be cut is provided; this leads to simplification of the process, to decrease of duration and labor consumption and to silicon saving as well. Method for separation of a part of a silicon monocrystal ingot grown, with prescribed concentration of carbon dope, comprises of separation of the lower conical part of the ingot, determination of carbon concentration at the lower end of the ingot having been formed, with the following separation of the lower part of the ingot with carbon concentration exceeding the prescribed value. Such separation of a part of an ingot is performed at a distance from the lower end that is equal to: EMBED Equation.3 , (1) where C1 is concentration of carbon dope at the lower end of the ingot having been formed, C2 – prescribed concentration of the carbon dope with account of confidence band, M1 – mass of the ingot from its beginning to the lower end of the ingot, Mcharge – mass of the charge fill for the monocrystal ingot growing, K – effective coefficient of the carbon additive distribution, D – average diameter of the ingot, р – density of silicon. Confidence band ± EMBED Equation.3 is determined by the inequality EMBED Equation.3 (2), where C2 is concentration of the carbon dope with account of confidence band, it is equal to difference of prescribed concentration of the carbon dope and the product EMBED Equation.3 , C – concentration of the carbon dope at the lower end of the ingot after separation of a part of the ingot, EMBED Equation.3 - square root from dispersion found from comparison of calculated and experimental data, EMBED Equation.3 - positive number being calculated for given probability P= EMBED Equation.3 , by the formula EMBED Equation.3 (3). The method being claimed provides exact enough, corresponding to prescribed probability, determination of the silicon monocrystal length to be cut determination. At that, the process is considerably simplified due to decrease of duration and labor consumption, loss of silicon decreases as well.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| UA2000084947A UA49103C2 (en) | 2000-08-21 | 2000-08-21 | Method for a part of silicon monocrystal grown with prescribed concentration of carbon dope separation |
| RU2000127391A RU2193611C2 (en) | 2000-08-21 | 2000-11-01 | Method for separating part of grown silicon monocrystal with desired carbon dope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| UA2000084947A UA49103C2 (en) | 2000-08-21 | 2000-08-21 | Method for a part of silicon monocrystal grown with prescribed concentration of carbon dope separation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| UA49103C2 true UA49103C2 (en) | 2002-09-16 |
Family
ID=34391001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| UA2000084947A UA49103C2 (en) | 2000-08-21 | 2000-08-21 | Method for a part of silicon monocrystal grown with prescribed concentration of carbon dope separation |
Country Status (2)
| Country | Link |
|---|---|
| RU (1) | RU2193611C2 (en) |
| UA (1) | UA49103C2 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6094722A (en) * | 1983-08-16 | 1985-05-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Silicon wafer |
| EP0191111B1 (en) * | 1984-12-28 | 1991-09-18 | International Business Machines Corporation | Improvements to pulling processes and equipment for growing silicon crystals having high and controlled carbon content |
| DE4123707A1 (en) * | 1990-08-20 | 1992-02-27 | Motorola Inc | Semiconductor wafer single crystal for rod - with uniform longitudinal concn. of nucleated impurity ppte. exposed to semiconductor material inversed w.r.t. exposure duration |
| JP2903916B2 (en) * | 1992-11-30 | 1999-06-14 | 信越半導体株式会社 | Semiconductor ingot processing method |
| EP1273684B1 (en) * | 1997-04-09 | 2005-09-14 | MEMC Electronic Materials, Inc. | Low defect density, vacancy dominated silicon |
-
2000
- 2000-08-21 UA UA2000084947A patent/UA49103C2/en unknown
- 2000-11-01 RU RU2000127391A patent/RU2193611C2/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| RU2193611C2 (en) | 2002-11-27 |
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