UA155514U - A method of obtaining a transparent electrically conductive coating - Google Patents

A method of obtaining a transparent electrically conductive coating Download PDF

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Publication number
UA155514U
UA155514U UAU202303785U UAU202303785U UA155514U UA 155514 U UA155514 U UA 155514U UA U202303785 U UAU202303785 U UA U202303785U UA U202303785 U UAU202303785 U UA U202303785U UA 155514 U UA155514 U UA 155514U
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UA
Ukraine
Prior art keywords
substrate
sputtering
bias
potential
argon
Prior art date
Application number
UAU202303785U
Other languages
Ukrainian (uk)
Inventor
Валерій Федорович Башев
Сергій Іванович Рябцев
Олександр Ігорович Кушнерьов
Тетяна Володимирівна Калініна
Original Assignee
Дніпровський Національний Університет Імені Олеся Гончара
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Дніпровський Національний Університет Імені Олеся Гончара filed Critical Дніпровський Національний Університет Імені Олеся Гончара
Priority to UAU202303785U priority Critical patent/UA155514U/en
Publication of UA155514U publication Critical patent/UA155514U/en

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Abstract

A method for obtaining a transparent electrically conductive coating includes pretreatment of a dielectric substrate with argon ions in a three-electrode ion-plasma sputtering of an In-Sn mosaic target in one cycle. The pretreatment of the surface of the dielectric substrate with cleaning of its surface is carried out at a bias potential of -100 V on the substrate for (5±0.25) min until the complete destruction of the undesirable gas shell on the substrate surface. After that, while maintaining the effect of the argon ion flux on the substrate, a transparent In-Sn-O oxide coating is sputtered onto the substrate with a bias for (2±0.25) min with simultaneous bombardment of the substrate with argon ions, which continue to be accelerated by a potential of -100 V. Then, after a joint two-minute sputtering with a bias, the further process of sputtering In-Sn-O oxide to a film thickness of 0.1-0.2 μm is continued without the influence of the bias potential on the substrate by sputtering a mosaic In-Sn target when a -1.2 kV potential is applied to the cathode-target for (7±0.5) min at argon and air pressures in the sputtering working volume of 3-10-3 and 4-10-3 Pa, respectively. In addition, the dielectric surface is additionally cleaned of impurities to enhance the forces of chemical interaction between the In-Sn-O oxide atoms and the surface atoms at 65-70 °C by treating its surface in a single cycle with the treatment of the dielectric substrate with argon ions.
UAU202303785U 2023-08-07 2023-08-07 A method of obtaining a transparent electrically conductive coating UA155514U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
UAU202303785U UA155514U (en) 2023-08-07 2023-08-07 A method of obtaining a transparent electrically conductive coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAU202303785U UA155514U (en) 2023-08-07 2023-08-07 A method of obtaining a transparent electrically conductive coating

Publications (1)

Publication Number Publication Date
UA155514U true UA155514U (en) 2024-03-06

Family

ID=90061774

Family Applications (1)

Application Number Title Priority Date Filing Date
UAU202303785U UA155514U (en) 2023-08-07 2023-08-07 A method of obtaining a transparent electrically conductive coating

Country Status (1)

Country Link
UA (1) UA155514U (en)

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